CN106800272A - A kind of MEMS wafer cutting and wafer scale release and method of testing - Google Patents
A kind of MEMS wafer cutting and wafer scale release and method of testing Download PDFInfo
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- CN106800272A CN106800272A CN201710087018.3A CN201710087018A CN106800272A CN 106800272 A CN106800272 A CN 106800272A CN 201710087018 A CN201710087018 A CN 201710087018A CN 106800272 A CN106800272 A CN 106800272A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/001—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same for cutting, cleaving or grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00896—Temporary protection during separation into individual elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
- B81C99/004—Testing during manufacturing
Abstract
The present invention relates to a kind of MEMS wafer cutting cleaning and method for releasing, comprise the following steps：Wafer frontside resist coating, thinning back side treatment；The front of bonding, wafer rear and glass base is bonded with UV glue；Cutting, is cut using step, and the cutting of two steps is continuously finished；Cleaning and drying wafer；Structure release, wafer and glass base are integrally put into degumming equipment carries out structure release；Solution bonding：Use the viscosity of the UV glue between UV irradiating machines reduction wafer and glass base；Expansion film is carried out to wafer；Chip is removed from UV films using chip picking-up apparatus is put into pallet；Sliver and expansion film；Optical detector packaging and testing；Need not twice align, it is ensured that the accuracy of cutting twice position, realize structure release and the test of wafer scale, efficiency is higher.
Description
Technical field
A kind of cutting of MEMS wafer of present invention design and wafer scale release and method of testing, belong to MEMS it is fine plus
Work and method for cutting wafer.
Background technology
MEMS (MEMS, Micro-Electro-Mechanical System) is a kind of based on microelectric technique
With a kind of high-tech area of micro-processing technology.MEMS technology can be by mechanical component, driver part, electric-control system, digital processing
System etc. is integrated into a tiny cells for entirety.MEMS have it is small, intelligent, executable, can integrated, processing compatibility
Well, many advantages, such as low cost.The development of MEMS technology opens a brand-new technical field and industry, using MEMS technology
Microsensor, microactrator, micro partses, Micromechanical Optics device, vacuum microelectronic device, power electronic devices of making etc.
It is preceding very wide application to be suffered from Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs, the field such as Internet of Things
Scape.
In the manufacturing process of MEMS, many complicated three-dimensionals or supporting construction all utilize sacrificial layer release process.
I.e. during micro mechanical structure cavity or movable micro-structural is formed, structural material is first deposited on dielectric film, then use
Photoetching and etch process prepare required various special constructions, then prepare support Rotating fields (cavity or parts with microstructure).Due to
It is removed structural material and only plays separating layer, therefore is called sacrifice layer (Sacrificial Layer), conventional sacrifice layer material
Expect main silica, polysilicon, polyimides (Polyimide) etc..Micro- knot of various activities can be produced using sacrifice layer
Structure, such as miniature bridge, cantilever beam, moving parts and mass, so after MEMS completes, MEMS structure release is
A crucial procedure in MEMS manufacturing process.
MEMS wafer is needed to be cut after the various manufacturing processes in the preceding road of completion, and wafer is cut into single chip,
Then it is packaged test.Structure release can be selected to carry out before being cut, it is also possible to which selection is carried out after dicing.Due to
Chip in wafer has MEMS structure, so on the sequencing of cutting cleaning release there is contradiction in three, if treatment
It is bad that MEMS chip can be caused to damage or scrap entirely.
Contradiction between treatment MEMS cuttings cleaning and structure release, existing solution technical scheme mainly has：
1) structure release first is carried out to wafer, is then cut by laser, it is not necessary to wet-cleaning；Cut using invisible laser
Cut, apparatus expensive and complex process, wafer needs first to carry out reduction processing, also needed to after having cut with breaking machine sliver and expansion
Film, and Cutting Road can not have figure, especially with metallic pattern, can reflected laser energy.Cutting Road requirement is only silicon material, is contained
Having silicon nitride or silica can also influence the absorption of light.Invisible laser cuts has particular/special requirement to the layout of wafer Cutting Road,
The figure of Cutting Road it is individually designed after can chip occupying area, reduce the Effective number of chips mesh on wafer.
2) structure release first is carried out to wafer, the MEMS structure to wafer carries out punching pad pasting protection, then carries out the back side to cut
Cut；Because the MEMS structure to wafer carries out pad pasting protection, it is necessary to increase operation and complex procedures, back side cutting problem is cost
Height, operating efficiency is low, and yield is unstable, is not suitable for MEMS accountings chip high
3) gluing protection first is carried out to wafer frontside, then carries out photoetching, cut using plasma-torch cutting, then
Discharged again；Need to carry out photoetching, also need to carry out thinning, lithographic equipment, stripping apparatus and plasma-torch cutting before release
Equipment is all very expensive.
The A of documents Chinese patent CN 103068318 disclose a kind of MEMS Silicon Wafers disk cutting and structure release
Method, prominent question is to be not carried out wafer scale operation, it is necessary to manual sliver, picks up one single chip, then put using vacuum WAND
Put and remove photoresist in pallet, and thousands of chips are included in a silicon wafer, the less efficient and follow-up knot of single pickup
Structure discharges and test is also single release and tests, less efficient；In addition, in the documents cutting twice in same position,
And cutting position close alignment, but after having cut once, from the beginning cut again, it is necessary to align twice, and contraposition is cut twice
Position can not possibly be completely superposed, low production efficiency.
The content of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art, there is provided a kind of cutting efficiency is high, easy to clean and discharges
Simple MEMS wafer cutting cleaning and method for releasing.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of MEMS wafer cutting and wafer scale discharge and survey
Method for testing, comprises the following steps：
Step 1：MEMS wafer front resist coating is protected, the back side carried out using stripping apparatus it is thinning, it is thinning after
The thickness of wafer is 100~300 μm；
Step 2：In glass base front surface coated UV glue, diameter is consistent with MEMS wafer, and MEMS wafer is face-up fixed
In transparent glass base, temporarily be bonded for the back side of MEMS wafer and glass base front by UV glue by the back side；
Step 3：The back side to being loaded with the glass base of MEMS wafer carries out first time pad pasting, and the first time pad pasting is indigo plant
Film, wafer and glass base are integrally attached on cutting special stainless steel framework；
Step 4：Cutting, using step cut, two steps cutting be continuously finished, along cut direction be provided with two alignment cut
Blade, two cutting edges continuously cut；Preceding cutting edge elder generation cutting crystal wafer, cutting crystal wafer after rear cutting edge, preceding cutting edge is by MEMS
Wafer draws saturating, and rear cutting edge cuts glass base, and does not draw glass base, the feed velocity 3~30mm/s of cutting, front and rear to cut
The thickness of blade is 30~60 μm；
Step 5：Cleaning and drying wafer；
Step 6：Glass base and MEMS wafer are integrally removed from first time pad pasting, and is removed photoresist removal using wet method
Photoresist and silicon the bits white residue on MEMS wafer surface；
Step 7：MEMS wafer with glass base is put into degumming equipment, wafer scale structure release is carried out, discharged
After finishing, wafer is taken out, wafer-level test is carried out to the MEMS wafer being bonded in glass base temporarily using probe station；
Step 8：Solution bonding, using UV irradiating machines, is irradiated, irradiation time to the UV glue between wafer and glass base
In 30~100s, regulation UV lamp pipe energy is in 120~360mJ/cm for control2Between, can by the viscosity of UV glue drop to before 1~
10%；
Step 9：Second pad pasting is carried out at the glass base back side for being loaded with MEMS wafer, glass base is fixed on stainless
On steel frame, the bubble at the glass base back side is removed；
Step 10：Glass base is split along MEMS wafer Cutting Road using sliver apparatus, it is ensured that all chips of institute are complete
It is complete to separate, then, expansion film process is carried out to wafer using film machine is expanded, all chips is uniformly expanded to surrounding；
Step 11：Using wafer scale optical detection is carried out, qualified chip is sub-elected
Step 12：Packaging and testing, using chip picking-up apparatus, chip are put into chip storage box, are packaged test.
The beneficial effect of MEMS wafer cutting cleaning and method for releasing is in the present invention：
(1) in step 4 using step cut, two steps cutting be continuously finished, once cut wafer can just be cut into it is some
Individual chip, it is not necessary to re-registrate, cutting position is completely superposed, and cutting efficiency is high, quality is good；
(2) by controlling the irradiation energy and irradiation time of UV irradiating machines in step 8, before the viscosity of UV films is dropped to
1~10%, viscosity is lower, and effect is more preferable；
(3) UV glue is coated on clear glass base and MEMS wafer implements interim bonding, by MEMS wafer level glass base
Entirety carries out structure release and test, realizes wafer scale release and tests, by MEMS chip and glass after UV irradiates solution bonding
Glass base is separated, and chip is picked up using chip picking-up apparatus, chip is put into storage chip box and enters subsequent packaging procedures, greatly
It is big to improve release and testing efficiency；
Further, the thickness of the glass base is 200~400 μm.
Further, in step 9, second pad pasting is blue film or UV films.
Further, during patch UV films in step 1, UV films are pulled out from reel after laminator, length exceeds the stainless steel
2~10cm of framework.
Further, the thickness of the UV films is 80~120mm.
Further, in step 4, the depth of rear cutting edge incision glass base be the glass base thickness 30%~
70%.
Beneficial effect using above-mentioned further technical scheme is：No matter how uniform UV films, thickness can all have deviation,
In cutting crystal wafer, blade cuts to glass base to cutting edge afterwards, and the depth for cutting glass base is the glass base thickness
30%~70%, so just can guarantee that wafer is drawn entirely saturating.
Further, in step 10, the chip for being spread, the spacing between each chip is controlled at 50~200 μm.
Further, thickness of the thickness of the preceding cutting edge more than the rear cutting edge.
Brief description of the drawings
Fig. 1 is the wafer schematic diagram after the resist coating of front in the present invention；
Fig. 2 is the glass base schematic diagram that front applies after UV glue in the present invention；
Fig. 3 is the schematic diagram that wafer and glass base are integrally placed on stainless steel frame in the present invention；
Wafer and glass base after Fig. 4 cuttings are integrally placed on the schematic diagram on stainless steel frame；
Wafer and glass base overall schematic after Fig. 5 cleanings；
Wafer and glass base overall schematic that Fig. 6 expands after film；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, wafer, 2, photoresist, 3, glass base, 4,
UV glue, 5, wafer and glass base entirety, 6, first time pad pasting, 7, stainless steel frame, 8, second pad pasting, 9, expand brilliant ring.
Specific embodiment
Principle of the invention and feature are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
It is non-for limiting the scope of the present invention.
As shown in Figures 1 to 6, a kind of MEMS wafer cutting cleaning and method for releasing, comprise the following steps：
Step 1：The front resist coating 2 of MEMS wafer 1 is protected, the back side carried out using stripping apparatus it is thinning, it is thinning
The thickness of wafer 1 is 100~300 μm afterwards.
Step 2：In the front surface coated UV glue 4 of glass base 3, diameter is consistent with MEMS wafer 1, and MEMS wafer 1 is face-up
It is fixed in transparent glass base 3, the back side is carried out the back side of MEMS wafer 1 and the front of glass base 3 temporarily by UV glue 4
Bonding.
Step 3：The back side to being loaded with the glass base 3 of MEMS wafer 1 carries out first time pad pasting 6 and protects, the first time
Pad pasting is blue film, then, wafer and glass base overall 5 is fixed on cutting special stainless steel framework 7.
Step 4：Cutting, using step cut, two steps cutting be continuously finished, along cut direction be provided with two alignment cut
Blade, two cutting edges continuously cut；Preceding cutting edge elder generation cutting crystal wafer 1, cutting crystal wafer 1 after rear cutting edge, preceding cutting edge will
Thoroughly, rear cutting edge cuts glass base to 1 stroke of MEMS wafer, and does not draw glass base, the 3~30mm/s of feed velocity of cutting,
The pitch values (i.e. chip is in X-direction and the size of Y-direction) and other cutting parameters of wafer 1 are set, and it is right that wafer 1 is carried out
Bit manipulation, to Ch1, carries out θ direction of principal axis adjustment, moves left and right workbench and adjusts cutting datum line, after confirming parameter, carries out
The Cutting Road of Ch2 and stepping confirm, after confirming parameter, start scribing；The thickness of front and rear cutting edge is 30~60 μm, cutting twice
Afterwards, wafer 1 draws saturating entirely, is separated into one single chip, as shown in Figure 4.
Step 5：Cleaning and drying wafer 1, the wafer 1 after cleaning are as shown in Figure 5.
Step 6：Glass base and MEMS wafer overall 5 is removed from first time pad pasting 6, and is removed photoresist removal using wet method
Photoresist 2 and silicon the bits white residue on the surface of MEMS wafer 1.
Step 7：MEMS wafer 1 with glass base is put into degumming equipment, wafer scale structure release is carried out, discharged
After finishing, wafer 1 is taken out, wafer scale survey is carried out to the MEMS wafer 1 being bonded in glass base 3 temporarily using probe station
Examination.
Step 8：Solution bonding, using UV irradiating machines, is irradiated to the UV glue 4 between wafer 1 and glass base 3, irradiates
, in 30~100s, regulation UV lamp pipe energy is in 120~360mJ/cm for time control2Between, before can the viscosity of UV glue be dropped to
1~10%.
Step 9：Second pad pasting 8 is carried out at the back side of glass base 3 for being loaded with MEMS wafer, second pad pasting 8 is
UV films or blue film, glass base 3 are fixed on stainless steel frame 7, and the bubble at the back side of glass base 3 is removed.
Step 10：Glass base 3 is split along the Cutting Road of MEMS wafer 1 using sliver apparatus, it is ensured that all chips are complete
It is complete to separate, then, expansion film process is carried out to wafer 1 using film machine is expanded, all chips is uniformly expanded to surrounding, the expansion film machine
The brilliant ring 9 of expansion is provided with, after expanding film, the outer unnecessary UV films of the brilliant ring 9 of expansion or blue film is crossed out, as shown in Figure 6.
Step 11：Using wafer scale optical detection is carried out, qualified chip is sub-elected.
Step 12：Packaging and testing, using chip picking-up apparatus, chip are put into chip storage box, are packaged test.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (7)
1. a kind of MEMS wafer cutting and wafer scale discharge and method of testing, it is characterised in that comprise the following steps：
Step 1：MEMS wafer front resist coating is protected, the back side carries out thinning, thinning rear wafer using stripping apparatus
Thickness be 100~300 μm；
Step 2：In glass base front surface coated UV glue, diameter is consistent with MEMS wafer, and MEMS wafer is face-up fixed on
In bright glass base, temporarily be bonded for the back side of MEMS wafer and glass base front by UV glue by the back side；
Step 3：The back side to being loaded with the glass base of MEMS wafer carries out first time pad pasting, and the first time pad pasting is blue film,
Wafer and glass base are integrally attached on cutting special stainless steel framework；
Step 4：Cutting, is cut using step, and the cutting of two steps is continuously finished, and two cutting knifes of alignment are provided with along cut direction
Piece, two cutting edges continuously cut；Preceding cutting edge elder generation cutting crystal wafer, cutting crystal wafer after rear cutting edge, preceding cutting edge is brilliant by MEMS
Circle draws saturating, and rear cutting edge cuts glass base, and does not draw glass base, the 3~30mm/s of feed velocity of cutting, front and rear cutting knife
The thickness of piece is 30~60 μm；
Step 5：Cleaning and drying wafer；
Step 6：Glass base and MEMS wafer are integrally removed from first time pad pasting, and it is brilliant using the wet method removal MEMS that removes photoresist
Photoresist and silicon the bits white residue of circular surfaces；
Step 7：MEMS wafer with glass base is put into degumming equipment, wafer scale structure release is carried out, release is finished
Afterwards, wafer is taken out, wafer-level test is carried out to the MEMS wafer being bonded in glass base temporarily using probe station；
Step 8：Solution bonding, using UV irradiating machines, is irradiated to the UV glue between wafer and glass base, irradiation time control
In 30~100s, regulation UV lamp pipe energy is in 120~360mJ/cm2Between, can by the viscosity of UV glue drop to before 1~
10%；
Step 9：Second pad pasting is carried out at the glass base back side for being loaded with MEMS wafer, glass base is fixed on stainless steel framework
On frame, the bubble at the glass base back side is removed；
Step 10：Glass base is split along MEMS wafer Cutting Road using sliver apparatus, it is ensured that all chips of institute divide completely
Open, then, expansion film process is carried out to wafer using film machine is expanded, all chips is uniformly expanded to surrounding；
Step 11：Using wafer scale optical detection is carried out, qualified chip is sub-elected
Step 12：Packaging and testing, using chip picking-up apparatus, chip are put into chip storage box, are packaged test.
2. a kind of MEMS wafer cutting according to claim 1 and wafer scale discharge and method of testing, it is characterised in that institute
The thickness for stating glass base is 200~400 μm.
3. a kind of MEMS wafer cutting according to claim 1 and wafer scale discharge and method of testing, it is characterised in that step
In rapid 9, second pad pasting is blue film or UV films.
4. a kind of MEMS wafer cutting according to claim 1 and wafer scale discharge and method of testing, it is characterised in that institute
It is 80~120mm to state first time pad pasting and second thickness of pad pasting.
5. a kind of MEMS wafer cutting according to claim 1 and wafer scale discharge and method of testing, it is characterised in that step
The depth of cutting edge incision glass base is the 30%~70% of the glass base thickness after in rapid 4.
6. a kind of MEMS wafer cutting according to claim 1 and wafer scale discharge and method of testing, it is characterised in that step
In rapid 10, the chip for being spread, the spacing between each chip is controlled at 50~200 μm.
7. a kind of MEMS wafer cutting according to claim 1 and wafer scale discharge and method of testing, it is characterised in that step
In rapid 4, the thickness of the thickness more than the rear cutting edge of the preceding cutting edge.
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| CN107298428A (en) * | 2017-06-27 | 2017-10-27 | 北京航天控制仪器研究所 | A kind of method separated for SOG MEMS chips unit |
| CN107706120A (en) * | 2017-09-28 | 2018-02-16 | 深圳赛意法微电子有限公司 | The method for packing of ultra-thin wafers |
| CN107733389A (en) * | 2017-11-01 | 2018-02-23 | 应达利电子股份有限公司 | A kind of quartz crystal is large stretch of and manufactures the method for small chips using it |
| CN108597989A (en) * | 2018-05-29 | 2018-09-28 | 李涵 | A kind of brilliant technique of semiconductor crystal wafer expansion |
| CN108748736A (en) * | 2018-05-30 | 2018-11-06 | 浙江美迪凯现代光电有限公司 | A kind of cutting mode for heavy sheet glass product |
| CN108996470A (en) * | 2018-08-09 | 2018-12-14 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting method |
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| CN109065439A (en) * | 2018-08-09 | 2018-12-21 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer surface particles eliminating equipment and method |
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