JP2017071074A - Method for manufacturing internal processing layer formation single crystal substrate, and method for manufacturing single crystal substrate - Google Patents
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本発明は、単結晶基板の表面から単結晶基板内部にレーザ光を集光することで、単結晶基板内部に加工層を形成した内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法に関する。 The present invention relates to a method for producing an internally processed layer-forming single crystal substrate in which a processed layer is formed inside a single crystal substrate by condensing laser light from the surface of the single crystal substrate into the single crystal substrate, and the single crystal substrate It relates to the manufacturing method.
従来、単結晶のシリコン（Ｓｉ）ウエハに代表される半導体ウエハを製造する場合には、石英るつぼ内に溶融されたシリコン融液から凝固した円柱形のインゴットを適切な長さのブロックに切断して、その周縁部を目標の直径になるよう研削し、その後、ブロック化されたインゴットをワイヤソーによりウエハ形にスライスして半導体ウエハを製造するようにしている。 Conventionally, when manufacturing a semiconductor wafer typified by a single crystal silicon (Si) wafer, a cylindrical ingot solidified from a silicon melt melted in a quartz crucible is cut into blocks of an appropriate length. Then, the peripheral edge is ground to a target diameter, and then the block-shaped ingot is sliced into a wafer shape with a wire saw to manufacture a semiconductor wafer.
このようにして製造された半導体ウエハは、前工程で回路パターンの形成等、各種の処理が順次施されて後工程に供され、この後工程で裏面がバックグラインド処理されて薄片化が図られることにより、厚さが約７５０μｍから１００μｍ以下、例えば７５μｍや５０μｍ程度に調整される。 The semiconductor wafer thus manufactured is subjected to various processes such as formation of a circuit pattern in the previous process in order and used for the subsequent process, and the back surface is back-ground processed in the subsequent process to achieve thinning. Accordingly, the thickness is adjusted to about 750 μm to 100 μm or less, for example, about 75 μm or 50 μm.
従来における半導体ウエハは、以上のように製造され、インゴットがワイヤソーにより切断され、しかも、切断の際にワイヤソーの太さ以上の切り代が必要となるので、厚さ０．１ｍｍ以下の薄い半導体ウエハを製造することが非常に困難であり、製品率も向上しないという問題がある。 A conventional semiconductor wafer is manufactured as described above, and an ingot is cut by a wire saw, and a cutting allowance larger than the thickness of the wire saw is required for cutting, so a thin semiconductor wafer having a thickness of 0.1 mm or less It is very difficult to manufacture the product, and the product rate is not improved.
一方、集光レンズでレーザ光の集光点をインゴット（ウエハ）の内部に合わせ、そのレーザ光でインゴットを相対的に走査することにより、インゴットの内部に多光子吸収による面状の改質層（加工層）を形成し、この改質層を剥離面としてインゴットの一部を基板として剥離することが開示されている（例えば、特許文献１参照）。 On the other hand, the focusing point of the laser beam is adjusted to the inside of the ingot (wafer) with the condenser lens, and the ingot is relatively scanned with the laser beam, so that a planar modified layer by multiphoton absorption is inside the ingot. It is disclosed that a (processed layer) is formed, and a part of the ingot is peeled off using the modified layer as a peeling surface (see, for example, Patent Document 1).
なお、この明細書中においては、別記する場合を除いてウエハのことを適宜に基板と称する。 In this specification, a wafer is appropriately referred to as a substrate unless otherwise specified.
ところで、単結晶基板の寸法が使用予定の寸法よりも大きい場合、この単結晶基板を小さい寸法にして再利用することができれば効率的である。 By the way, when the size of the single crystal substrate is larger than the size to be used, it is efficient if the single crystal substrate can be reused with a small size.
本発明は、上記課題に鑑み、単結晶基板からそれよりも小さい寸法の単結晶基板を得ることを可能にする内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法を提供することを課題とする。 In view of the above-mentioned problems, the present invention provides a method for manufacturing an internally processed layer-forming single crystal substrate and a method for manufacturing a single crystal substrate, which make it possible to obtain a single crystal substrate having a smaller dimension from a single crystal substrate. The task is to do.
上記課題を解決するための本発明の一態様によれば、レーザ光を集光するレーザ集光手段を、加工対象単結晶基板の被照射面上に非接触に配置する第１工程と、前記レーザ集光手段により前記加工対象単結晶基板内部にレーザ光を集光しつつ、レーザ光の集光位置を前記加工対象単結晶基板のくり抜き対象部の周囲方向に変化させることで、破断強度が低下した加工層を前記くり抜き対象部の周囲に形成する第２工程と、を備えた内部加工層形成単結晶基板の製造方法が提供される。 According to one aspect of the present invention for solving the above-described problem, a first step of disposing laser condensing means for condensing laser light in a non-contact manner on an irradiated surface of a processing target single crystal substrate; While condensing laser light inside the single crystal substrate to be processed by the laser condensing means, the breaking strength is changed by changing the condensing position of the laser light in the peripheral direction of the cut target portion of the single crystal substrate to be processed. And a second step of forming a lowered processed layer around the cut-out target portion.
本発明の別の態様によれば、レーザ光を集光するレーザ集光手段を、加工対象単結晶基板の被照射面上に非接触に配置する第１工程と、前記レーザ集光手段により前記加工対象単結晶基板内部にレーザ光を集光しつつ、レーザ光の集光位置を前記加工対象単結晶基板のくり抜き対象部の周囲方向に変化させることで、破断強度が低下した加工層を前記くり抜き対象部の周囲に形成する第２工程と、前記加工層から破断させて前記くり抜き対象部をくり抜く第３工程と、を備えたことを特徴とする単結晶基板の製造方法が提供される。 According to another aspect of the present invention, a first step of disposing laser condensing means for condensing laser light in a non-contact manner on an irradiated surface of a processing target single crystal substrate, and the laser condensing means While condensing the laser beam inside the single crystal substrate to be processed, changing the laser beam condensing position in the peripheral direction of the cut target portion of the single crystal substrate to be processed, the processed layer having reduced fracture strength There is provided a method for producing a single crystal substrate, comprising: a second step of forming around a hollow target portion; and a third step of breaking the hollow target portion by breaking the processed layer.
本発明によれば、単結晶基板からそれよりも小さい寸法の単結晶基板を得ることを可能にする内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法を提供することができる。 According to the present invention, it is possible to provide a method for manufacturing an internally processed layer-forming single crystal substrate and a method for manufacturing a single crystal substrate, which makes it possible to obtain a single crystal substrate having a smaller dimension from the single crystal substrate. it can.
以下、添付図面を参照して、本発明の実施の形態について説明する。以下の説明では、すでに説明したものと同一または類似の構成要素には同一または類似の符号を付し、その詳細な説明を適宜省略している。また、以下に示す実施の形態は、この発明の技術的思想を具体化するための例示であって、この発明の実施の形態は、構成部品の材質、形状、構造、配置等を下記のものに特定するものではない。この発明の実施の形態は、用紙を逸脱しない範囲内で種々変更して実施できる。 Embodiments of the present invention will be described below with reference to the accompanying drawings. In the following description, the same or similar components as those already described are denoted by the same or similar reference numerals, and detailed description thereof is omitted as appropriate. The following embodiments are exemplifications for embodying the technical idea of the present invention, and the embodiments of the present invention are described below in terms of the material, shape, structure, arrangement, etc. of the components. It is not something specific. The embodiment of the present invention can be implemented with various modifications without departing from the paper.
図１は、本発明の一実施形態（以下、本実施形態という）で内部加工層形成単結晶基板を製造することを説明する模式的な側面図である。図２（ａ）から（ｃ）は、本実施形態で内部加工層形成単結晶基板を製造するプロセスを説明する模式定な側面図である。図３(ａ)および(ｂ)は、それぞれ、本実施形態で内部加工層が形成されていくことを示す模式的な側面断面図である。図４は、本実施形態に係る内部加工層形成単結晶基板から単結晶基板をくり抜くことを説明する模式的な斜視図である。図５は、本実施形態に係る内部加工層形成単結晶基板から単結晶基板をくり抜くことの変形例を説明する模式的な斜視図である。図６は、本実施形態に係る内部加工層形成単結晶基板から単結晶基板をくり抜くことの変形例を説明する模式的な斜視図である。図７は、本実施形態に係る内部加工層形成単結晶基板から単結晶基板をくり抜くことの変形例を説明する模式的な斜視図である。図８は、本実施形態に係る内部加工層形成単結晶基板の変形例で、複数の単結晶基板を得るための加工状態を示す模式的な平面図である。図９は、実験例の加工条件１で得られた内部加工層形成単結晶部材の断面を示す写真図である。図１０は、実験例の加工条件４で得られた内部加工層形成単結晶部材の断面を示す写真図である。 FIG. 1 is a schematic side view for explaining the production of an internally processed layer-formed single crystal substrate according to an embodiment of the present invention (hereinafter referred to as this embodiment). FIGS. 2A to 2C are schematic side views for explaining a process for manufacturing an internal processed layer-formed single crystal substrate in the present embodiment. FIGS. 3A and 3B are schematic side cross-sectional views showing that the internal processing layer is formed in the present embodiment. FIG. 4 is a schematic perspective view for explaining the hollowing out of the single crystal substrate from the internally processed layer-forming single crystal substrate according to the present embodiment. FIG. 5 is a schematic perspective view illustrating a modified example of hollowing out the single crystal substrate from the single-crystal substrate with the internal processing layer according to the present embodiment. FIG. 6 is a schematic perspective view for explaining a modified example of hollowing out the single crystal substrate from the single-crystal substrate with internal processing layer according to the present embodiment. FIG. 7 is a schematic perspective view illustrating a modified example of hollowing out the single crystal substrate from the single crystal substrate with the inner processed layer according to the present embodiment. FIG. 8 is a schematic plan view showing a processing state for obtaining a plurality of single crystal substrates, which is a modification of the internal crystal layer forming single crystal substrate according to the present embodiment. FIG. 9 is a photographic view showing a cross section of the internally processed layer-forming single crystal member obtained under processing condition 1 of the experimental example. FIG. 10 is a photographic diagram showing a cross section of the internally processed layer-forming single crystal member obtained under processing condition 4 of the experimental example.
図１〜図５に示すように、本実施形態に係る内部加工層形成単結晶基板２０は、パルス状のレーザ光Ｂを加工対象単結晶基板１０の被照射面２０ｔから照射し単結晶基板内部で集光することで、この被照射面２０ｔから離間しかつこの被照射面２０ｔから基板の厚さ方向に円筒状（図４参照）またはテーパ状（円錐台状。図５参照）に広がる加工層２１と、その加工層２１の周囲外側および周囲内側に隣接する非加工部２２とを有する。この非加工部２２は、加工層２１の内側であるくり抜き対象部２４を有する。 As shown in FIG. 1 to FIG. 5, the internal crystallized layer forming single crystal substrate 20 according to the present embodiment irradiates the pulsed laser beam B from the irradiated surface 20 t of the single crystal substrate 10 to be processed, and the inside of the single crystal substrate. By condensing in this manner, the processing is separated from the irradiated surface 20t and spreads from the irradiated surface 20t in the thickness direction of the substrate in a cylindrical shape (see FIG. 4) or a tapered shape (conical frustum shape, see FIG. 5). It has the layer 21 and the non-processed part 22 adjacent to the outer periphery of the process layer 21, and the periphery inner side. The non-processed portion 22 has a cutout target portion 24 that is inside the processed layer 21.
加工層２１には、レーザ光Ｂの集光によって形成された加工痕２１ｃが加工層２１に、一定の間隔で規則的に配列されている。 In the processing layer 21, processing marks 21 c formed by condensing the laser beam B are regularly arranged in the processing layer 21 at regular intervals.
本実施形態では、以下のようにして内部加工層形成単結晶基板２０を製造する。レーザ集光手段としては、例えば図１に示すレーザ加工装置１２ｍを配置する。このレーザ加工装置１２ｍは、レーザ発振器、集光器を順次備え、またＸＹステージおよび回転ステージを備えている。また、集光器は複数のレンズが組み合わされた組レンズとなっており、集光性が高くされている。 In the present embodiment, the internally processed layer-formed single crystal substrate 20 is manufactured as follows. As the laser condensing means, for example, a laser processing apparatus 12m shown in FIG. 1 is arranged. This laser processing apparatus 12m is sequentially provided with a laser oscillator and a condenser, and further includes an XY stage and a rotary stage. Further, the condenser is a combined lens in which a plurality of lenses are combined, and the light condensing performance is enhanced.
ここで、Ｚ方向は、レーザ加工装置１２ｍにおけるレーザ光の集光方向であり、かつ、加工対象単結晶基板１０の厚み方向となっている。そしてＸ方向はＺ方向に直交する方向であり、加工対象単結晶基板１０の半径方向となる。また加工対象単結晶基板１０は、例えば円盤状のシリコンウエハである。加工対象単結晶基板１０を保持する基板ホルダーは回転可能であり、加工対象単結晶基板１０をその中心軸まわりに一定の回転速度で回転差あせることが可能となっている。 Here, the Z direction is the laser beam condensing direction in the laser processing apparatus 12 m and the thickness direction of the single crystal substrate 10 to be processed. The X direction is a direction orthogonal to the Z direction and is the radial direction of the processing target single crystal substrate 10. The processing target single crystal substrate 10 is, for example, a disk-shaped silicon wafer. The substrate holder that holds the single crystal substrate 10 to be processed can be rotated, and the single crystal substrate 10 to be processed can be rotated around the central axis at a constant rotation speed.
ＸＹステージで移動させるものは加工単結晶基板１０であるが、レーザ光の照射側を移動させることも可能である。 What is moved on the XY stage is the processed single crystal substrate 10, but it is also possible to move the laser light irradiation side.
（内部加工層単結晶基板の製造方法）
内部加工層単結晶基板２０を製造するには、図１に示すように、レーザ加工装置１２ｍを、加工対象単結晶基板１０の被照射面上に非接触に配置する工程を行う（第１工程）。なお、本明細書で加工対象単結晶基板とは、３次元形状の立体的な単結晶部材のうちの基板状部分も含む概念である。
(Method for manufacturing single-crystal substrate with internal processing layer)
In order to manufacture the inner processed layer single crystal substrate 20, as shown in FIG. 1, a step of disposing the laser processing apparatus 12m on the irradiated surface of the processing target single crystal substrate 10 is performed (first step). ). Note that the single crystal substrate to be processed in this specification is a concept including a substrate portion of a three-dimensional three-dimensional single crystal member.
そして、図２（ａ）〜（ｃ）に示すように、回転ステージ上に固定、配置された加工対象単結晶基板１０を回転ステージの回転数で回転させつつレーザ光Ｂを照射することで、加工対象単結晶基板１０の内部にレーザ光Ｂを集光しつつ、レーザ光Ｂの集光位置を加工対象単結晶基板１０のくり抜き対象部の周囲方向に変化させることで、破断強度が低下した加工層２１をくり抜き対象部の周囲に形成する工程を行う（第２工程）。この時レーザ光Ｂは、例えばパルス幅が１μｓ以下のパルスレーザ光からなり、３００ｎｍ以上の波長が選択され、例えば加工対象単結晶基板１０がシリコンウエハの場合は、１０００ｎｍ以上の波長のＹＡＧレーザ等が好適に使用される。 Then, as shown in FIGS. 2A to 2C, by irradiating the laser beam B while rotating the processing target single crystal substrate 10 fixed and arranged on the rotary stage at the rotational speed of the rotary stage, Breaking strength was reduced by focusing the laser beam B inside the processing target single crystal substrate 10 and changing the focusing position of the laser beam B in the peripheral direction of the cut target portion of the processing target single crystal substrate 10. A step of forming the processed layer 21 around the hollowed portion is performed (second step). At this time, the laser beam B is composed of, for example, a pulse laser beam having a pulse width of 1 μs or less, and a wavelength of 300 nm or more is selected. For example, when the processing target single crystal substrate 10 is a silicon wafer, a YAG laser having a wavelength of 1000 nm or more Are preferably used.
以下、内部加工層を形成する手順を詳細に説明する。図２（ａ）ではレーザ光Ｂ照射面とは反対側の加工対象単結晶基板１０の裏面（底面）側から照射を開始し、レーザ光Ｂの集光位置を、くり抜き対象部の周囲方向に変化させつつ徐々にレーザ光斜面側（Ｚ軸方向）へ移動させていく。このＺ軸方向への移動方法は集光器Ｇあるいは回転ステージＳの少なくとも一方を移動すればよい。加工対象単結晶基板１０の裏面（底面）側への最初の集光位置は、レーザ光Ｂの照射により形成される加工層２１が加工対象単結晶基板１０の裏面(底面)の表面に亀裂やアブレーションなどのダメージを与えない位置に設定することが望ましい。これは内部加工層形成単結晶基板から単結晶基板をくり抜く際に、クラックや割れなどの不具合発生を防止するためである。 Hereinafter, the procedure for forming the internal processing layer will be described in detail. In FIG. 2A, irradiation is started from the back surface (bottom surface) side of the processing target single crystal substrate 10 on the opposite side to the laser light B irradiation surface, and the condensing position of the laser light B is set in the peripheral direction of the cutout target portion. The laser beam is gradually moved to the laser beam slope side (Z-axis direction) while changing. As a moving method in the Z-axis direction, it is sufficient to move at least one of the condenser G or the rotary stage S. The first condensing position on the back surface (bottom surface) side of the processing target single crystal substrate 10 is that the processing layer 21 formed by irradiation with the laser beam B has cracks on the surface of the back surface (bottom surface) of the processing target single crystal substrate 10. It is desirable to set it at a position that does not cause damage such as ablation. This is in order to prevent the occurrence of defects such as cracks and cracks when the single crystal substrate is cut out from the single crystal substrate having the inner processed layer.
加工痕２１ｃを形成する間隔は、基板平面方向はレーザ光Ｂの発振繰り返し周波数と回転ステージの回転速度すなわち周速との関係で決定され、高さ（深さ）方向は集光位置のＺ軸方向の移動量により決定される。加工層２１は上記のように所定間隔にレーザ光Ｂを照射して、加工痕２１ｃが連続した加工領域として形成された領域として得られる。 The interval at which the processing marks 21c are formed is determined by the relationship between the oscillation repetition frequency of the laser beam B and the rotation speed of the rotary stage, that is, the peripheral speed, in the substrate plane direction, and the height (depth) direction is the Z axis of the condensing position. It is determined by the amount of movement in the direction. The processed layer 21 is obtained as a region where the processing mark 21c is formed as a continuous processed region by irradiating the laser beam B at a predetermined interval as described above.
レーザ光Ｂの照射手順としては、回転ステージ上に固定、配置した加工対象単結晶部材１０内部のＺ軸方向の位置を決定後に、先ず同心円の外径に沿ってにレーザ光Ｂを少なくとも１回転照射した後、レーザ加工装置１２ｍ方向のＺ軸方向に集光位置を移動してレーザ光Ｂを同様にて同心円の外径に沿って照射する。この時Ｚ軸方向への集光位置の移動は、加工対象単結晶部材１０の厚さ方向に対して垂直あるいはテーパ状に移動することにより、加工層２１は垂直状あるいはテーパ状に形成することができる。 As the irradiation procedure of the laser beam B, after determining the position in the Z-axis direction inside the processing target single crystal member 10 fixed and arranged on the rotary stage, the laser beam B is first rotated at least once along the outer diameter of the concentric circle. After the irradiation, the condensing position is moved in the Z-axis direction of the laser processing apparatus 12m, and the laser beam B is similarly irradiated along the outer diameter of the concentric circle. At this time, the movement of the condensing position in the Z-axis direction is performed in a vertical or tapered manner with respect to the thickness direction of the single crystal member 10 to be processed, so that the processed layer 21 is formed in a vertical or tapered shape. Can do.
この一連の動作を加工対象単結晶基板１０の表面近傍まで行うことにより、図２（ｃ）、図４に示すように加工層２１が得られる。この時、加工対象単結晶基板１０の表面近傍とは、レーザ光Ｂの集光位置から表面方向にクラックが延びて表面まで加工クラックが到達することで、加工クラックによってくり抜き加工が可能となる位置であり、しかも、該表面にレーザ光Ｂの照射による該表面に加工痕や亀裂あるいはアブレーションなどの状態が生じない位置である。 By performing this series of operations up to the vicinity of the surface of the single crystal substrate 10 to be processed, a processed layer 21 is obtained as shown in FIGS. At this time, the vicinity of the surface of the processing target single crystal substrate 10 is a position where a crack is extended in the surface direction from the condensing position of the laser beam B and the processing crack reaches the surface, so that the processing crack can be hollowed out. Moreover, it is a position where a state such as a processing mark, a crack, or ablation does not occur on the surface due to the irradiation of the laser beam B.
加工対象単結晶基板１０の内部にレーザ光Ｂを照射すると集光によって生じる温度上昇に伴い加工痕は集光点から加工単結晶基板１０の表面方向に向かって延びることが分かっている。この温度上昇に伴う加工痕の延伸は単結晶基板１０内部の加工痕が一定状態で形成されず、特に加工対象単結晶基板１０の結晶方位方向に亀裂が生じてしまい、本発明の目的であるくり抜き加工において結晶方位方向への割れや破損が生じる。 It is known that when the laser beam B is irradiated inside the processing target single crystal substrate 10, the processing traces extend from the condensing point toward the surface direction of the processing single crystal substrate 10 as the temperature rises due to condensing. The stretching of the processing trace accompanying this temperature rise does not form the processing trace inside the single crystal substrate 10 in a constant state, and in particular, a crack occurs in the crystal orientation direction of the processing target single crystal substrate 10, which is an object of the present invention. Cracking or breakage in the crystal orientation direction occurs in the hollowing process.
従って、本発明おけるレーザ加工においては、上記した温度上昇を影響のない程度に抑制する必要がある。そのため、本発明では加工対象単結晶部材１０の深さ方向に集光点を移動させることは好ましくない。 Therefore, in the laser processing in the present invention, it is necessary to suppress the above-described temperature rise to an extent that does not affect the laser processing. Therefore, in this invention, it is not preferable to move a condensing point to the depth direction of the single crystal member 10 to be processed.
また、必要に応じて加工対象単結晶基板１０を冷却することも可能である。 In addition, the single crystal substrate 10 to be processed can be cooled as necessary.
以上説明したように、本実施形態により、加工対象単結晶基板１０からそれよりも小さい寸法の単結晶基板２６を得ることを可能にする内部加工層形成単結晶基板２６を製造することができる。そして、くり抜き対象部２４のテーパ内側の面（図２では被照射面２０ｔ）側を力Ｆで押圧する等を行い、内部加工層形成単結晶基板２０からくり抜き対象部２４をくり抜くことで単結晶基板２６が得られる。なお、単結晶基板２６の外周面には、必要に応じて研磨等の加工を行う。 As described above, according to the present embodiment, it is possible to manufacture the internal processing layer forming single crystal substrate 26 that makes it possible to obtain the single crystal substrate 26 having a smaller size from the processing target single crystal substrate 10. Then, the inner surface of the taper target portion 24 (the irradiated surface 20t in FIG. 2) is pressed with a force F, and the single crystal is cut out from the inner processed layer forming single crystal substrate 20. A substrate 26 is obtained. The outer peripheral surface of the single crystal substrate 26 is subjected to processing such as polishing as necessary.
従って、本実施形態では、単結晶基板の寸法が使用予定の寸法よりも大きい場合、この単結晶基板を加工対象単結晶基板１０とし、加工対象単結晶基板１０よりも小さい寸法の単結晶基板２６を得ることで加工対象単結晶基板１０を再利用することができ、資源の有効活用が図られる。 Therefore, in this embodiment, when the size of the single crystal substrate is larger than the size to be used, this single crystal substrate is used as the processing target single crystal substrate 10, and the single crystal substrate 26 having a size smaller than the processing target single crystal substrate 10. Thus, the single crystal substrate 10 to be processed can be reused, and resources can be effectively used.
レーザ光Ｂは、例えばパルス幅が１μｓ以下のパルスレーザ光からなり、９００ｎｍ以上の波長、好ましくは１０００ｎｍ以上の波長が選択され、ＹＡＧレーザ等が好適に使用される。 The laser beam B is composed of, for example, a pulse laser beam having a pulse width of 1 μs or less. A wavelength of 900 nm or more, preferably 1000 nm or more is selected, and a YAG laser or the like is preferably used.
なお、図３(ａ)および(ｂ)では、加工層２１には加工痕２１ｃが一列に配置されているように描いているが、実際には、加工層２１には複数の加工痕２１ｃが散りばめられていてもよい。これにより、くり抜き対象部２４を内部加工層形成単結晶基板２０からくり抜く際の作業が更に容易になる。また、加工対象単結晶基板１０の表面近傍である該表面にレーザ光Ｂの照射による該表面に加工痕や亀裂あるいはアブレーションなどの状態が生じないような照射となるように、本実施形態では、レーザ光Ｂの集光位置を、くり抜き対象部の周囲方向に変化させつつ徐々にレーザ光斜面側（Ｚ軸方向）へ移動させている。 3A and 3B, the processing layer 21 is drawn so that the processing marks 21c are arranged in a line, but actually, the processing layer 21 has a plurality of processing marks 21c. It may be scattered. Thereby, the operation | work at the time of cutting out the hollow object part 24 from the internal process layer formation single crystal substrate 20 becomes still easier. Further, in the present embodiment, the surface near the surface of the single crystal substrate 10 to be processed is irradiated so that a state such as a processing mark, a crack, or ablation is not generated on the surface by irradiation with the laser beam B. The condensing position of the laser beam B is gradually moved to the laser beam inclined surface side (Z-axis direction) while being changed in the peripheral direction of the cut-out target portion.
また、第２工程後、あるいは第２工程中に、被照射面側または被照射面とは反対面側に、加工層２１へのクラックを発生し易くする切欠２８（図６、図７参照）を形成してもよい。これにより、切欠２８を広げるように内部加工層形成単結晶基板２０に力を加えると、切欠２８を起点としてから加工層２１へ応力が伝わり、基板表面にチッピングなどによる割れなどを発生させずに単結晶基板２６を得ることができる。 Further, after the second step or during the second step, a notch 28 (see FIGS. 6 and 7) that facilitates the generation of cracks in the processed layer 21 on the irradiated surface side or the opposite surface side to the irradiated surface. May be formed. As a result, when a force is applied to the single-crystal substrate 20 with the inner processed layer formed so as to widen the notch 28, stress is transmitted to the processed layer 21 from the notch 28 as a starting point without causing cracks due to chipping or the like on the substrate surface. A single crystal substrate 26 can be obtained.
この場合、切欠２８を加工層２１に隣接する位置に形成すると、切欠２８から発生したクラック３０によって、加工層２１の隣接する加工痕２１ｃ同士で順次クラックが発生して行き易い。 In this case, when the notch 28 is formed at a position adjacent to the processed layer 21, the crack 30 generated from the notch 28 is likely to generate a crack sequentially between the adjacent processing marks 21 c of the processed layer 21.
切欠２８は、レーザ集光手段１２により加工痕２１ｃを追加形成したものであっても良いし、他の形成手段で形成してもよい。 The notch 28 may be formed by additionally forming a machining mark 21c by the laser condensing means 12, or may be formed by other forming means.
また、加工痕２１ｃを形成する位置が被照射面２０ｔに近くなるに従い、レーザ出力を徐々に低下させると、くり抜き対象部２４を良好な形状でくり抜く上で好ましい。 Further, it is preferable that the laser output is gradually reduced as the position where the processing mark 21c is formed approaches the irradiated surface 20t in order to cut out the cutout target portion 24 with a good shape.
１枚の加工対象単結晶基板１０から複数の単結晶基板２６をくり抜くことも可能である（例えば４枚の単結晶基板をくり抜く例として図８参照）。この場合、目的とする単結晶基板２０の寸法に応じて加工層２１を形成すればよく、その方法としては集光部１２を回転させてＺ軸方向へ移動させる方式などが採用できる。 It is also possible to cut out a plurality of single crystal substrates 26 from one single processing target single crystal substrate 10 (for example, see FIG. 8 as an example of cutting out four single crystal substrates). In this case, the processed layer 21 may be formed according to the dimensions of the target single crystal substrate 20, and a method of rotating the condensing unit 12 in the Z-axis direction may be employed as the method.
＜実験例＞
回転ステージ上に加工対象単結晶部材１０として直径１５０ｍｍ、厚さ６２５μｍの単結晶シリコンウエハ（結晶方位（１００）、鏡面）を吸着盤にて吸着固定し、加工対象単結晶基板１０の同心円として直径１００ｍｍの単結晶基板２６を得るために、内部加工層形成単結晶基板を作製した。なお、本実験例では、集光装置に収差補正環を備えさせ、条件１〜４において調整量を０．６ｍｍとした。
<Experimental example>
A single crystal silicon wafer (crystal orientation (100), mirror surface) having a diameter of 150 mm and a thickness of 625 μm is sucked and fixed on a rotary stage by a suction disk as a single crystal member 10 to be processed, and the diameter of the single crystal substrate 10 to be processed is a concentric circle. In order to obtain a 100 mm single crystal substrate 26, an internally processed layer-formed single crystal substrate was produced. In this experimental example, the light collecting device was provided with an aberration correction ring, and the adjustment amount was 0.6 mm in conditions 1 to 4.
またデフォーカス量とは、加工対象単結晶基板１０の表面を基準（０）として集光位置を加工対象単結晶基板１０の内部（裏面）方向への集光位置の移動量であり、マイナス表記は内部方向を表す。 The defocus amount is the amount of movement of the light condensing position in the inner (back surface) direction of the processing target single crystal substrate 10 with the front surface of the processing target single crystal substrate 10 as a reference (0), and is expressed in minus. Represents the internal direction.
本発明者は、加工層２１を形成する際のレーザ光の照射条件を検討するために、加工条件１〜４の条件で、厚み６２５μｍのシリコンウエハに、レーザ加工装置１２ｍからレーザ光Ｂをデフォーカス量（μｍ）：−１５６〜０ で照射して加工層２１を形成した。そして、加工層２１の断面を電子顕微鏡で観察し、比較的良好な断面形状であることを確認した（例えば、図９、図１０参照）。 In order to study the irradiation conditions of the laser beam when forming the processed layer 21, the present inventor demultiplexes the laser beam B from the laser processing apparatus 12m onto a 625 μm thick silicon wafer under the processing conditions 1 to 4. The processed layer 21 was formed by irradiation with a focus amount (μm): −156 to 0. And the cross section of the process layer 21 was observed with the electron microscope, and it confirmed that it was a comparatively favorable cross-sectional shape (for example, refer FIG. 9, FIG. 10).
さらに本発明者は、加工条件３を用いて、厚み６２５μｍ、直径１５０ｍｍのシリコンウエハに、レーザ加工装置１２ｍからレーザ光Ｂを以下の条件で照射して厚さ方向の平均直径が３０ｍｍ径となるように加工層２１を形成した。更に、被照射面２０ｔ付近の加工痕２１ｃの周辺にガラス切りで切欠状の加工を加え、ウエハのくり抜きを行い、図１１に示すウエハを得た。 Further, the present inventor uses the processing condition 3 to irradiate a silicon wafer having a thickness of 625 μm and a diameter of 150 mm with the laser beam B from the laser processing apparatus 12 m under the following conditions so that the average diameter in the thickness direction becomes 30 mm. Thus, the processed layer 21 was formed. Further, a notch-like process was applied to the periphery of the processing mark 21c near the irradiated surface 20t by cutting a glass, and the wafer was cut out to obtain the wafer shown in FIG.
なお、この時のデフォーカス量は−１３６μｍ〜２０μｍであり、内部加工層の深さ方向の上限はウエハ表面から１１０μｍの位置にあり、レーザ照射によるウエハ表面のダメージは生じなかった。 The defocus amount at this time was −136 μm to 20 μm, and the upper limit in the depth direction of the internal processing layer was 110 μm from the wafer surface, and the wafer surface was not damaged by the laser irradiation.
なお、本実施形態では、加工層２１の外形や内形を円状以外（例えば四角状）とすることも可能である。 In the present embodiment, the outer shape and inner shape of the processed layer 21 may be other than a circle (for example, a square shape).
また、加工痕２１ｃを形成する際、隣接する加工痕２１ｃ同士の間にクラックが順次発生するように形成しても良いし、遅れ破壊のように少し時間をおいてから加工痕２１ｃ同士を繋ぐクラックが発生するように形成してもよい。これにより、くり抜き対象部２４を極めて容易にくり抜くことができる。 Further, when forming the processing marks 21c, the processing marks 21c may be formed so that the cracks are sequentially generated between the adjacent processing marks 21c, or the processing marks 21c are connected after a while such as delayed fracture. You may form so that a crack may generate | occur | produce. As a result, the cutout target portion 24 can be cut out very easily.
本発明により、単結晶基板からそれよりも小さい寸法の単結晶基板を得ることを可能にすることから、薄く切り出された単結晶基板は、Ｓｉ基板（シリコン基板）であれば、太陽電池に応用可能であり、また、ＳｉＣなどであれば、ＳｉＣ系パワーデバイスなどに応用可能であり、透明エレクトロニクス分野、照明分野、ハイブリッド／電気自動車分野など幅広い分野において適用可能である。 According to the present invention, it is possible to obtain a single crystal substrate having a smaller size than a single crystal substrate. Therefore, if the single crystal substrate cut out thinly is an Si substrate (silicon substrate), it can be applied to a solar cell. In addition, SiC can be applied to SiC power devices and the like, and can be applied in a wide range of fields such as the transparent electronics field, the lighting field, and the hybrid / electric vehicle field.
１０ 加工対象単結晶基板
１２ レーザ集光手段
１２ｍ レーザ加工装置
２０ 内部加工層形成単結晶基板
２０ｔ 被照射面
２１ 加工層
２１ｃ 加工痕
２４ くり抜き対象部
２６ 単結晶基板
２８ 切欠
３０ クラック
Ｂ レーザ光
DESCRIPTION OF SYMBOLS 10 Processing target single crystal substrate 12 Laser condensing means 12m Laser processing apparatus 20 Internal processing layer formation single crystal substrate 20t Irradiated surface 21 Processing layer 21c Processing mark 24 Cutting target part 26 Single crystal substrate 28 Notch 30 Crack B Laser light
Claims (6)
前記レーザ集光手段により前記加工対象単結晶基板内部にレーザ光を集光しつつ、レーザ光の集光位置を前記加工対象単結晶基板のくり抜き対象部の周囲方向に変化させることで、破断強度が低下した加工層を前記くり抜き対象部の周囲に形成する第２工程と、
を備えたことを特徴とする内部加工層形成単結晶基板の製造方法。 A first step of disposing laser condensing means for condensing laser light in a non-contact manner on the irradiated surface of the single crystal substrate to be processed;
While condensing the laser beam inside the single crystal substrate to be processed by the laser condensing means, the breaking position is changed by changing the condensing position of the laser light in the peripheral direction of the cut target portion of the single crystal substrate to be processed. A second step of forming a processed layer having a reduced thickness around the cut-out object portion;
A method for producing an internally processed layer-forming single crystal substrate, comprising:
前記レーザ集光手段により前記加工対象単結晶基板内部にレーザ光を集光しつつ、レーザ光の集光位置を前記加工対象単結晶基板のくり抜き対象部の周囲方向に変化させることで、破断強度が低下した加工層を前記くり抜き対象部の周囲に形成する第２工程と、
前記加工層から破断させて前記くり抜き対象部をくり抜く第３工程と、
を備えたことを特徴とする単結晶基板の製造方法。 A first step of disposing laser condensing means for condensing laser light in a non-contact manner on the irradiated surface of the single crystal substrate to be processed;
While condensing the laser beam inside the single crystal substrate to be processed by the laser condensing means, the breaking position is changed by changing the condensing position of the laser light in the peripheral direction of the cut target portion of the single crystal substrate to be processed. A second step of forming a processed layer having a reduced thickness around the cut-out object portion;
A third step of breaking the cut target portion by breaking the processed layer;
A method for producing a single crystal substrate, comprising:
前記第３工程では、前記切欠を広げるように力を加えることで前記クラックを発生させることを特徴とする請求項５に記載の単結晶基板の製造方法。 Before performing the third step, on the irradiated surface side or the opposite surface side to the irradiated surface, forming a notch that facilitates generation of cracks in the processed layer,
The method for manufacturing a single crystal substrate according to claim 5, wherein in the third step, the crack is generated by applying a force to widen the notch.
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