JP5917862B2 - Processing object cutting method - Google Patents

Processing object cutting method Download PDF

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JP5917862B2
JP5917862B2 JP2011187658A JP2011187658A JP5917862B2 JP 5917862 B2 JP5917862 B2 JP 5917862B2 JP 2011187658 A JP2011187658 A JP 2011187658A JP 2011187658 A JP2011187658 A JP 2011187658A JP 5917862 B2 JP5917862 B2 JP 5917862B2
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cutting surface
ingot
modified region
workpiece
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JP2013049161A (en
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大祐 河口
大祐 河口
惇治 奥間
惇治 奥間
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浜松ホトニクス株式会社
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00Climate change mitigation technologies for sector-wide applications
    • Y02P80/30Reducing waste in manufacturing processes; Calculations of released waste quantities

Description

  The present invention relates to a processing object cutting method for cutting a processing object made of a hexagonal SiC crystal.

  As a conventional technique for cutting an ingot, for example, a silicon ingot cutting device described in Patent Document 1 is known. This silicon ingot cutting device includes a plurality of wires which are arranged in parallel with each other at a predetermined interval and reciprocate. When the silicon ingot is cut by the silicon ingot cutting device, the silicon ingot is cut to a predetermined thickness by pressing the reciprocating wire against the side surface while supplying abrasive liquid to the side surface of the silicon ingot.

JP 2002-184724 A

  Incidentally, SiC (silicon carbide) is currently attracting attention as a material for next-generation devices. For this reason, the request | requirement with respect to the technique for cut | disconnecting processing objects, such as an ingot which consists of SiC, is increasing. However, since SiC has a very high hardness, if the wire as described above is used to cut a workpiece made of SiC, processing at a low speed is unavoidable, and throughput is reduced. For the same reason, if a wire is used to cut a workpiece made of SiC, it may not be cut accurately along the planned cutting surface of the workpiece. In such a case, a considerable amount of polishing is required to flatten the cut surface, resulting in increased material loss.

  The present invention has been made in view of such circumstances, and it is possible to improve the throughput when cutting a workpiece made of a hexagonal SiC crystal and reduce the material loss. It is an object to provide a method.

  In order to solve the above-mentioned problem, a processing object cutting method according to the present invention irradiates a processing object made of a hexagonal SiC crystal with a pulsed laser beam to form a modified region inside the processing object, A processing object cutting method for cutting a processing object, wherein one irradiation point of a pulse laser beam and another irradiation point closest to the one irradiation point have a predetermined pitch. A process of forming a modified region along the first scheduled cutting surface by irradiating the workpiece with pulse laser light along the first scheduled cutting surface, and a modification along the first scheduled cutting surface. And a step of cutting the workpiece along the first planned cutting surface after forming the texture region, the first cutting planned surface being an angle corresponding to the c-plane of the hexagonal SiC crystal and the off angle The cracks generated from the modified region are hexagonal SiC. The pitch to extend along the c-plane of the crystal, characterized in that. The off angle includes the case of 0 °. In this case, the first planned cutting plane (or a second planned cutting plane described later) is parallel to the c-plane of the hexagonal SiC crystal.

  In this workpiece cutting method, the workpiece is irradiated along the first planned cutting surface by irradiating a pulse laser beam along the first scheduled cutting surface of the workpiece consisting of hexagonal SiC crystals. A reforming region is formed inside the substrate. At that time, a crack generated from the modified region extends along the c-plane of the hexagonal SiC crystal at a pitch between one irradiation point of the pulse laser beam and another irradiation point closest to the one irradiation point. The pitch is as follows. For this reason, when the workpiece is cut along the first scheduled cutting surface, a crack (c-plane crack) extending along the c-plane from the modified region is generated inside the workpiece. Since the c-plane crack facilitates cutting along the first scheduled cutting surface of the workpiece, the workpiece can be cut in a short time, and throughput can be improved. Furthermore, according to this processing object cutting method, as described above, since the c-plane crack is generated from the modified region, it is possible to accurately cut the processing object along the first scheduled cutting surface. it can. Therefore, the amount of polishing for flattening the cut surface of the cut piece cut out from the workpiece and the cut surface of the workpiece can be reduced, and the loss of material can be reduced.

  In the method for cutting an object to be processed according to the present invention, after cutting the object to be processed along the first scheduled cutting surface, one irradiation point of the pulse laser beam and another irradiation point closest to the one irradiation point Is irradiated with pulsed laser light along the second scheduled cutting surface of the workpiece so as to form a modified region along the second scheduled cutting surface. And a step of cutting the workpiece along the second scheduled cutting surface after forming the modified region along the second scheduled cutting surface, and the second scheduled cutting surface includes: The c-plane of the hexagonal SiC crystal can form an off-angle angle. In this method, after the modified region is formed along the first planned cutting surface and the workpiece is cut, the modified region is formed along the second planned cutting surface. For this reason, for example, compared with the case where the modified regions are formed on a plurality of scheduled cutting surfaces having different distances from the incident surface of the pulse laser beam, the modified regions are formed at positions relatively close to the incident surface of the pulse laser beam. It can be performed. As a result, it becomes possible to form a modified region with relatively low processing energy and cause c-plane cracking.

  In the method for cutting a workpiece according to the present invention, the pulse is formed after the modified region is formed along the first scheduled cutting surface and before the workpiece is cut along the first scheduled cutting surface. The incident side of the pulsed laser light on the workpiece is closer to the workpiece than the first scheduled cutting surface so that one irradiation point of the laser beam and another irradiation point closest to the one irradiation point have a predetermined pitch. A step of forming a modified region along the second scheduled cutting surface by irradiating the workpiece with pulsed laser light along the second planned scheduled cutting plane; and along the second scheduled cutting plane And forming a modified region, and then cutting the workpiece along the second planned cutting surface, wherein the second planned cutting surface has an off-angle with the c-plane of the hexagonal SiC crystal. It can be an angle of minutes. In this method, first, a pulsed laser beam is irradiated in order along each of the first and second scheduled cutting surfaces to form a modified region to cause c-plane cracking, and then the first and second The workpiece is cut along each of the planned cutting surfaces. For this reason, the workpiece can be efficiently cut a plurality of times.

  In the workpiece cutting method according to the present invention, the predetermined pitch can be set to 1 μm or more and less than 10 μm. In this case, c-plane cracks from the modified region can be reliably generated.

  In the workpiece cutting method according to the present invention, the pulse width of the pulse laser beam can be less than 20 ns or greater than 100 ns. In this case, c-plane cracks from the modified region can be generated more reliably.

  ADVANTAGE OF THE INVENTION According to this invention, the throughput at the time of cut | disconnecting the workpiece which consists of a hexagonal system SiC crystal can be improved, and the workpiece cutting method which can reduce material loss can be provided.

It is a block diagram of the laser processing apparatus used for formation of a modification area | region. It is a top view of the processing target object before laser processing. It is sectional drawing along the III-III line of the workpiece shown by FIG. It is a top view of the processing target after laser processing. It is sectional drawing along the VV line of the workpiece of FIG. It is sectional drawing along the VI-VI line of the processing target object of FIG. It is a figure for demonstrating the ingot which is a process target object of the process target cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of one Embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of another embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of another embodiment of this invention. It is a figure for demonstrating the main processes of the workpiece cutting method of another embodiment of this invention. It is a figure for demonstrating the modification of the workpiece cutting method of embodiment of this invention. It is a figure for demonstrating the modification of the workpiece cutting method of embodiment of this invention. It is a figure for demonstrating the modification of the workpiece cutting method of embodiment of this invention. It is an enlarged photograph which shows the mode of the cutting plan surface at the time of giving multipoint processing.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted. In addition, the dimensional ratio of each part in each figure does not necessarily match the actual one.

  In the processing object cutting method according to an embodiment of the present invention, a modified region is formed inside the processing object along the scheduled cutting surface by irradiating the processing object with laser light along the planned cutting surface. To do. First, the formation of the modified region will be described with reference to FIGS.

  As shown in FIG. 1, a laser processing apparatus 100 includes a laser light source 101 that oscillates a laser beam L, a dichroic mirror 103 that is arranged to change the direction of the optical axis (optical path) of the laser beam L by 90 °, and And a condensing lens 105 for condensing the laser light L. Further, the laser processing apparatus 100 includes a support base 107 for supporting the workpiece 1 irradiated with the laser light L condensed by the condensing lens 105, and a stage 111 for moving the support base 107. And a laser light source control unit 102 for controlling the laser light source 101 to adjust the output of the laser light L, the pulse width, and the like, and a stage control unit 115 for controlling the movement of the stage 111.

  In this laser processing apparatus 100, the laser light L emitted from the laser light source 101 has its optical axis changed by 90 ° by the dichroic mirror 103, and the inside of the processing object 1 placed on the support base 107. The light is condensed by the condensing lens 105. At the same time, the stage 111 is moved, and the workpiece 1 is moved relative to the laser beam L along the planned cutting surface 5. As a result, a modified region along the planned cutting surface 5 is formed on the workpiece 1.

  As shown in FIGS. 1 and 2, a cutting target surface 5 for cutting the processing object 1 is set on the processing object 1. Here, the planned cutting surface 5 is a virtual surface extending in a plane substantially parallel to the surface 3 of the workpiece 1. When the modified region is formed inside the workpiece 1, as shown in FIG. 3, the laser beam L is emitted in a state where the condensing point P is aligned on the planned cutting surface 5 inside the workpiece 1. It moves relatively along a predetermined line 5a (that is, along the direction of arrow A in FIG. 2). Thereby, as shown in FIGS. 4 to 6, the modified region 7 is formed along the planned cutting surface 5. The line 5a for moving the laser light L relative to the cutting target surface 5 is not limited to a straight line.

  Moreover, the condensing point P is a location where the laser light L is condensed. In addition, the modified region 7 may be formed continuously or intermittently. Further, the modified region 7 may be in the form of a line or a dot. In short, the modified region 7 only needs to be formed at least inside the workpiece 1. In addition, a crack may be formed starting from the modified region 7, and the crack and modified region 7 may be exposed on the outer surface (front surface, back surface, or side surface) of the workpiece 1.

  Incidentally, the laser light L here passes through the workpiece 1 and is particularly absorbed near the condensing point inside the workpiece 1, thereby forming the modified region 7 in the workpiece 1. (Ie, internal absorption laser processing). Therefore, since the laser beam L is hardly absorbed on the surface 3 of the workpiece 1, the surface 3 of the workpiece 1 is not melted. Generally, when a hole, a groove, or the like is formed by being melted and removed from the front surface 3 (surface absorption laser processing), the processing region gradually proceeds from the front surface 3 to the back surface side.

  By the way, the modified region formed in the present embodiment refers to a region in which density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings. Examples of the modified region include a melt treatment region, a crack region, a dielectric breakdown region, a refractive index change region, and the like, and there is a region where these are mixed. Furthermore, as the modified region, there are a region in which the density of the modified region in the material to be processed is changed as compared with the density of the non-modified region, and a region in which lattice defects are formed (collectively these are high-density regions). Also known as the metastatic region).

  In addition, the area where the density of the melt treatment area, the refractive index change area, the modified area has changed compared to the density of the non-modified area, and the area where lattice defects are formed are further included in these areas and the modified areas. In some cases, cracks (microcracks) are included in the boundary between the non-modified region and the non-modified region. The included crack may be formed over the entire surface of the modified region, or may be formed in only a part or a plurality of parts.

Further, in the present embodiment, the modified region 7 is formed by forming a plurality of modified spots (processing marks) along the planned cutting surface 5. The modified spot is a modified portion formed by one pulse shot of pulsed laser light (that is, one pulse of laser irradiation: laser shot). Examples of the modified spot include a crack spot, a melting treatment spot, a refractive index change spot, or a mixture of at least two of these.
[First Embodiment]

  Subsequently, the workpiece cutting method according to the first embodiment of the present invention will be described with reference to FIGS. In this method of cutting an object to be processed, the object to be processed made of a hexagonal SiC crystal is irradiated with pulsed laser light to form a modified region inside the object to be processed, and the object to be processed is cut (sliced).

  First, as shown in part (a) of FIG. 7, an ingot 1 is prepared as a processing target in the processing target cutting method according to the present embodiment. The diameter of the ingot 1 is about 3 inches, for example. The ingot 1 is composed of a hexagonal SiC crystal 10 as shown in part (b) of FIG. Inside the ingot 1, a cutting planned surface (first cutting planned surface) 5A is set. The planned cutting surface 5 </ b> A forms an off-angle angle with the c-plane orthogonal to the c-axis of the hexagonal SiC crystal 10.

  Therefore, by cutting the ingot 1 along the planned cutting surface 5A, it is possible to manufacture a hexagonal SiC substrate having a main surface that forms an off-angle angle with the c-plane. The planned cutting surface 5A is, for example, substantially parallel to the surface 3 of the ingot 1 and can be set at an arbitrary position from the surface 3 according to the desired thickness of the hexagonal SiC substrate. The off angle is, for example, about 4 ° and includes the case of 0 °. When the off-angle is 0 °, the planned cutting surface 5A is parallel to the c-plane.

  Subsequently, the prepared ingot 1 is placed, for example, on the support 107 of the laser processing apparatus 100 (see FIG. 1). At this time, the ingot 1 is placed on the support 107 with the surface 3 of the ingot 1 facing the condensing lens 105 side of the laser processing apparatus 100. Therefore, in the present embodiment, the surface 3 of the ingot 1 becomes the incident surface of the laser light L. Therefore, the surface 3 of the ingot 1 is polished so as not to prevent the laser beam L from entering the ingot 1.

  Subsequently, as shown in FIG. 8A, the condensing point P of the laser beam L is positioned inside the ingot 1 by a predetermined distance from the surface 3 of the ingot 1. That is, the condensing point P of the laser beam L is positioned on the planned cutting surface 5A set inside the ingot 1. Here, the condensing point P of the laser beam L is positioned at the central portion 5Ac of the planned cutting surface 5A. The position of the condensing point P of the laser beam L can be changed, for example, by driving the stage 111 and moving the support 107 under the control of the stage control unit 115.

  Subsequently, the surface 3 of the ingot 1 is used as the incident surface of the laser beam L, and the laser beam L, which is a pulse laser beam, is irradiated to the ingot 1 along the planned cutting surface 5A. At this time, as shown in part (b) of FIG. 8, the condensing point P of the laser light L extends from the center 5Ac of the planned cutting surface 5A to the edge of the planned cutting surface 5A along the planned cutting surface 5A. While moving linearly relative to 5Ae (in the direction of arrow A1 in the figure), the ingot 1 is moved along the planned cutting surface 5A and centered on the central portion 5Ac of the planned cutting surface 5A (indicated by the arrow in the figure). Rotate (in the direction of A2). Thereby, the condensing point P of the laser beam L is relatively moved in a spiral shape along the planned cutting surface 5A from the central portion 5Ac of the planned cutting surface 5A toward the edge 5Ae. 8B is a plan view of the ingot 1. FIG.

  By irradiating the laser beam L in this manner, as shown in FIG. 9, the ingot 1 is directed along the planned cutting surface 5A from the central portion 5Ac of the planned cutting surface 5A toward the edge 5Ae. Thus, the modified region 7 is formed in a spiral shape. Since the laser beam L is a pulsed laser beam, the modified region 7 is formed as a set of modified spots 9 formed by one pulse shot. 9 and 10 are plan views of the ingot 1. FIG.

  Here, the irradiation with the laser light L is performed such that one irradiation point of the laser light L and another irradiation point closest to the one irradiation point are at a predetermined pitch PT. This point will be described in detail. As described above, in this step, the condensing point P of the laser light L is relatively moved along the planned cutting surface 5A in a spiral shape from the central portion 5Ac of the planned cutting surface 5A toward the edge 5Ae. . For this reason, as shown in FIG. 10, the irradiation points LP of the laser light L are arranged in a spiral shape along the planned cutting surface 5A to form a spiral irradiation point row R. The irradiation point LP is a point where the laser beam L for one pulse is irradiated when the condensing point P of the laser beam L is relatively moved.

At this time, there is paying attention to the irradiation point LP 1 (see enlarged portion in the drawing), as the closest other irradiation point LP on the irradiation point LP 1, there are two cases below. First, the next irradiation point LP 2 of the irradiation point LP 1 (or irradiation point LP 3 above) is, in some cases closest to the irradiation point LP 1. In other words, the irradiation point LP 2 adjacent to the irradiation point LP 1 the circumferential direction of the ingot 1 is (or irradiation point LP 3), there is a case closest to the irradiation point LP 1. In this case, the pitch of the irradiation point LP 1 and the next irradiation point LP 2 (or irradiation point LP 3 before it) (or pulse pitch) P 12 is set to be a predetermined pitch PT.

The pulse pitch is represented by the moving speed V of the condensing point P of the laser light L and the pulse oscillation frequency F of the laser light L (moving speed V / frequency F). By controlling the moving speed V and the frequency F, Can be adjusted. Therefore, by controlling the moving speed V of the condensing point P of the laser light L and the pulse oscillation frequency F of the laser light L, the pulse pitch of the laser light L is set to a predetermined pitch PT, and the laser light L the irradiation point LP 1, the pitch P 12 between the irradiation point LP closest irradiation point LP 2 to 1 (or irradiation point LP 3) has a predetermined pitch PT. That is, in this case, the pitch between the irradiation points LP in the circumferential direction of the ingot 1 can be set to the predetermined pitch PT by adjusting the pulse pitch.

Then, when the irradiation point LP 1 has to belong to the n peripheral R n of irradiation point sequence R, the position corresponding to the irradiation point LP1 in the previous (or next Part) (n-1) th revolution R n-1 irradiation point LP 4 in the, in some cases the closest to the irradiation point LP 1. In other words, the irradiation point LP 4 adjacent to the irradiation point LP 1 the radial direction of the ingot 1, there is a case closest to the irradiation point LP 1. In this case, if the interval between the circumferential ends of the irradiation point sequence R with a predetermined pitch PT, and the irradiation point LP 1 of the n peripheral R n, nearest the n-1 round R on the irradiation point LP 1 the pitch P 14 between the irradiation point LP 4 of n-1 can be a predetermined pitch PT. The interval between each circumference of the irradiation point row R can be adjusted by controlling the moving speed of the condensing point P of the laser light L in the radial direction of the ingot 1 and the rotational speed of the ingot 1, for example. . That is, in this case, the pitch between the irradiation points LP in the radial direction of the ingot 1 can be set to a predetermined pitch by adjusting the interval between the circumferences of the irradiation point row R.

  In addition, by adjusting both the interval between each circumference of the irradiation point sequence R and the pulse pitch, the pitch between the irradiation points LP can be set to the predetermined pitch PT in both the circumferential direction and the radial direction of the ingot 1. Good.

  Here, the predetermined pitch PT is a pitch such that cracks generated from the modified region 7 extend along the c-plane of the hexagonal SiC crystal 10 (in other words, cracks generated from the modified region 7 are generated). In other words, the pitch extends the longest in the direction along the c-plane as compared to the other directions.In other words, the crack extending from the modified region 7 along the c-plane (c-plane crack) is suitable for the ingot 1. This is the pitch that occurs.) According to the knowledge of the present inventor, such a predetermined pitch PT is not less than 1 μm and less than 10 μm. If the predetermined pitch PT is smaller than 1 μm, it is necessary to increase the number of times of irradiation with the laser light L to the entire cutting planned surface 5A, and thus the throughput is lowered.

  Further, if the predetermined pitch PT is 10 μm or more, cracks generated from the modified region 7 are difficult to extend along the c-plane (that is, c-plane cracks are not easily generated from the modified region 7). That is, according to the knowledge of the present inventor, when the pitch between one irradiation point LP of the laser beam L and another irradiation point LP closest to the one irradiation point LP is in the range of 1 μm or more and less than 10 μm. In addition, c-plane cracking from the modified region 7 is preferably generated. In addition, from the viewpoint of reliably generating c-plane cracks, the predetermined pitch PT is more preferably 1 μm or more and 9 μm or less. From the same viewpoint, more preferably, the predetermined pitch is not less than 1 μm and not more than 8 μm. The c-plane crack may occur only inside the ingot 1 or may reach the side surface 6 of the ingot 1.

  By irradiating the laser beam L along the planned cutting surface 5A of the ingot 1 and forming the modified region 7 as described above, the inside of the ingot 1 extends from the modified region 7 along the c-plane. Surface cracking has occurred. In the subsequent process, the ingot 1 is cut in that state. The step of cutting the ingot 1 will be specifically described. In this step, first, the ingot 1 is fixed to the support member 20 as shown in FIG. More specifically, the back surface 4 of the ingot 1 is bonded and fixed to the front surface 20 s of the support member 20 with an adhesive. As the adhesive, for example, an adhesive that can be cured by heat or ultraviolet rays can be used.

  Subsequently, as shown in part (b) of FIG. 11, a portion above the planned cutting surface 5 of the ingot 1 while fixing a portion of the side surface 6 of the ingot 1 on the surface 3 side of the planned cutting surface 5. The support member 20 is rotated in the direction of separating the ingot 1 from the ingot 1 (in the direction of the arrow A3 in the figure). Thereby, inside the ingot 1 (or from the side surface 6), the crack progresses along the planned cutting surface 5A so as to connect the c-plane cracks, and the ingot 1 is cut along the planned cutting surface 5A. Thereafter, the adhesive between the back surface 4 of the ingot 1 and the front surface 20 s of the support member 20 is removed with, for example, an etching solution, thereby releasing the fixation between the ingot 1 and the support member 20.

  Thereby, as shown in FIG. 12A, a cut piece 11 for a hexagonal SiC substrate and a new ingot 12 are formed from the ingot 1. In the step of cutting the ingot 1, the ingot 1 is cut by rotating at least one of the ingot 1 and the support member 20 so that the ingot 1 is twisted along the planned cutting surface 5A. May be.

  In the subsequent process, the cut surface 32 of the ingot 12 is polished in order to use the cut surface 32 of the ingot 12 as the incident surface of the laser beam L. Further, if necessary, the cut surface 11a of the cut piece 11 may also be polished and flattened. Thereby, a hexagonal SiC substrate is manufactured.

  Subsequently, the laser beam L is irradiated on the newly formed ingot 12 as described above. More specifically, first, as shown in part (b) of FIG. 12, after placing the ingot 12 on the support base 107 of the laser processing apparatus 100 (not shown), the cut surface (surface) of the ingot 12. A condensing point P of the laser beam L is positioned inside the ingot 12 by a predetermined distance from 32. That is, the condensing point P of the laser beam L is positioned on the planned cutting surface (second cutting planned surface) 5B set inside the ingot 12. Here, the condensing point P of the laser beam L is positioned at the central portion 5Bc of the planned cutting surface 5B.

  The planned cutting surface 5B is substantially parallel to the cutting surface 32 of the ingot 12, for example, and can be set at an arbitrary position from the cutting surface 32 according to the desired thickness of the hexagonal SiC substrate. The planned cutting surface 5B forms an angle corresponding to the off-angle with the c-plane of the hexagonal SiC crystal 10. The off angle is, for example, about 4 ° and includes the case of 0 °. When the off-angle is 0 °, the planned cutting surface 5B is parallel to the c-plane.

  Subsequently, the cutting surface 32 of the ingot 12 is used as the incident surface of the laser beam L, and the ingot 12 is irradiated with the laser beam L along the planned cutting surface 5B. As described above, the cut surface 32 of the ingot 12 is polished so as not to prevent the laser light L from entering the ingot 1. In the irradiation with the laser light L, as described above, the condensing point P of the laser light L is spirally formed along the planned cutting surface 5B from the central portion 5Bc of the planned cutting surface 5B toward the edge 5Be. Move relative. Further, one irradiation point of the laser beam L and another irradiation point closest to the one irradiation point are set to a predetermined pitch PT.

  As a result, as shown in FIG. 13A, the modified region 7 is formed in a spiral shape along the planned cutting surface 5B inside the ingot 12. Further, c-plane cracking occurs from the modified region 7. Then, the ingot 12 is cut along the planned cutting surface 5B in the same manner as the cutting of the ingot 1. Thereby, as shown in FIG. 13B, a cut piece 13 and a new ingot 14 for the hexagonal SiC substrate are formed from the ingot 12. Thereafter, when the ingot 14 is further cut, the above step is repeated after the cut surface 34 of the ingot 14 is polished to be used as the incident surface of the laser light L. If necessary, the cut surface 13a of the cut piece 13 may also be polished and flattened. Thereby, a hexagonal SiC substrate is newly manufactured.

  As described above, in the workpiece cutting method according to the present embodiment, by irradiating the laser light L along the planned cutting surfaces 5A and 5B of the ingots 1 and 12 made of the hexagonal SiC crystal 10, A modified region 7 is formed inside the ingots 1 and 12 along the planned cutting surfaces 5A and 5B. At this time, the pitch between one irradiation point LP of the laser beam L and the other irradiation point LP closest to the one irradiation point LP is set so that cracks generated from the modified region 7 are c in the hexagonal SiC crystal 10. A predetermined pitch PT (for example, a range of 1 μm or more and 10 μm or less) extending along the surface is set.

  For this reason, when cutting the ingots 1 and 12 along the planned cutting surfaces 5A and 5B, c-plane cracks extending from the modified region 7 along the c-plane are formed inside the ingots 1 and 12. . Since the c-plane crack facilitates cutting along the planned cutting surfaces 5A and 5B of the ingots 1 and 12, the ingots 1 and 12 can be cut in a short time, and the throughput can be improved. .

  Moreover, in the workpiece cutting method according to the present embodiment, when the ingots 1 and 12 are cut along the scheduled cutting surfaces 5A and 5B, as described above, c-plane cracks are generated, so the cutting is scheduled. The ingots 1 and 12 can be accurately cut along the surfaces 5A and 5B. Therefore, the amount of polishing for flattening the cut surfaces 11a and 13a of the cut pieces 11 and 13 cut from the ingots 1 and 12 and the cut surfaces 32 and 34 of the ingots 12 and 14 can be reduced. Loss can be reduced.

  Furthermore, in the workpiece cutting method according to the present embodiment, after the modified region 7 is formed along the planned cutting surface 5A and the ingot 1 is cut, the cutting target surface 5B of the ingot 12 that is newly formed is formed. A modified region 7 is formed along the line. For this reason, for example, compared with the case where the modified region 7 is formed in advance on a plurality of scheduled cutting surfaces having different distances from the incident surface of the laser beam L, the modified region is always at a position relatively close to the incident surface of the laser beam L Region 7 can be formed. Therefore, according to the workpiece cutting method according to the present embodiment, the modified region 7 can be formed with a relatively low machining energy to cause c-plane cracking.

In the processing object cutting method described above, when the ingots 1 and 12 are cut, the ingots 1 and 12 may be cut by using a wire saw along the scheduled cutting surfaces 5A and 5B. Even in this case, the c-plane crack generated from the modified region 7 facilitates the cutting of the ingots 1 and 12 with a wire saw, so that the ingots 1 and 12 can be cut in a short time while reducing material loss. Can be done.
[Second Embodiment]

  Subsequently, a workpiece cutting method according to the second embodiment of the present invention will be described with reference to FIGS. In this method of cutting an object to be processed, the object to be processed made of a hexagonal SiC crystal is irradiated with pulsed laser light to form a modified region inside the object to be processed, and the object to be processed is cut (sliced).

  First, as shown in part (a) of FIG. 14, an ingot 1 is prepared as a processing object in the processing object cutting method according to the present embodiment. The ingot 1 is the same as the ingot 1 as a processing object in the processing object cutting method according to the first embodiment, but three scheduled cutting surfaces (first A scheduled cutting surface) 5A, a scheduled cutting surface (second scheduled cutting surface) 5B, and a scheduled cutting surface 5C are set.

  Planned cutting planes 5A, 5B, and 5C form an off-angle angle with the c-plane of hexagonal SiC crystal 10. Therefore, by cutting the ingot 1 along each of the planned cutting surfaces 5A, 5B, and 5C, a plurality of hexagonal SiC substrates having a main surface that forms an angle corresponding to the c-plane and the off-angle can be manufactured. The scheduled cutting surfaces 5A, 5B, and 5C are, for example, substantially parallel to the surface 3 of the ingot 1 and can be set at an arbitrary position from the surface 3 according to the desired thickness of the hexagonal SiC substrate. The off angle is, for example, about 4 ° and includes the case of 0 °. When the off angle is 0 °, the planned cutting surfaces 5A, 5B, 5C are parallel to the c-plane.

  Subsequently, after the prepared ingot 1 is placed on, for example, the support base 107 of the laser processing apparatus 100 (see FIG. 1), as shown in FIG. 14B, a predetermined distance from the surface 3 of the ingot 1 Only the condensing point P of the laser beam L is positioned inside the ingot 1. That is, the condensing point P of the laser light L is positioned on the planned cutting surface 5A set inside the ingot 1. The planned cutting surface 5A is set at a position farthest from the incident surface (surface 3) of the laser beam L among the planned cutting surfaces 5A, 5B, and 5C. Here, the condensing point P of the laser beam L is positioned on the central portion 5Ac of the planned cutting surface 5A.

  Subsequently, the ingot 1 is irradiated with the laser light L in the same manner as in the first embodiment, with the surface 3 of the ingot 1 being the incident surface of the laser light L. Therefore, the condensing point P of the laser light L is relatively moved in a spiral shape along the planned cutting surface 5A from the central portion 5Ac of the planned cutting surface 5A toward the edge 5Ae. Similarly to the first embodiment, the laser beam L is irradiated with one irradiation point LP of the laser beam L and another irradiation point LP closest to the one irradiation point LP with the predetermined pitch PT. It is done to become. As a result, as shown in FIG. 15A, the modified region 7 is formed in a spiral shape along the planned cutting surface 5A, and the c-plane crack extends from the modified region 7 along the c-plane. Occurs.

  Note that the fact that one irradiation point LP of the laser beam L is close to the other irradiation point LP means that, for example, the mutual distance in the direction along the planned cutting surface 5A is small. It does not mean the distance relationship between the irradiation points LP on the different cutting scheduled surfaces, such as the irradiation point LP on the surface 5A and the irradiation point LP on the planned cutting surface 5B.

  Subsequently, the condensing point P of the laser light L is positioned on the planned cutting surface 5B set inside the ingot 1. The planned cutting surface 5B is positioned closer to the incident surface (front surface 3) of the laser light L in the ingot 1 than the planned cutting surface 5A, and is positioned closer to the back surface 4 side of the ingot 1 than the planned cutting surface 5C. Here, the condensing point P of the laser beam L is positioned at the central portion 5Bc of the planned cutting surface 5B.

  Subsequently, similarly to the case of the planned cutting surface 5A, the ingot 1 is irradiated with the laser light L along the planned cutting surface 5B. As a result, the modified region 7 is formed in a spiral shape along the planned cutting surface 5B, and a c-plane crack extending from the modified region 7 along the c-plane occurs. Then, similarly to the case of the planned cutting surface 5A and the planned cutting surface 5B, the ingot 1 is irradiated with the laser light L along the planned cutting surface 5C. As a result, as shown in FIG. 15B, modified regions 7 are formed along each of the planned cutting surfaces 5A, 5B, and 5C, and from these modified regions 7 along the c-plane. C-plane cracks extending.

  Subsequently, the ingot 1 is cut along each of the planned cutting surfaces 5A, 5B, 5C. Here, by inserting a wire saw from the side surface 6 of the ingot 1 to the ingot 1 in the order of the planned cutting surface 5C, the planned cutting surface 5B, and the planned cutting surface 5A, the planned cutting surface 5C, the planned cutting surface 5B, and the planned cutting surface 5A. The ingot 1 is sequentially cut along each of the above. That is, after cutting the ingot 1 along the planned cutting surface 5C using a wire saw, the ingot 1 is cut along the planned cutting surface 5B, and then the ingot 1 is cut along the planned cutting surface 5A. . The ingot 1 may be cut at the same time along each of the planned cutting surface 5A, the planned cutting surface 5B, and the planned cutting surface 5C by using, for example, three wire saws simultaneously.

  Thus, as shown in FIG. 16, the cut pieces 21, 22, and 23 for the hexagonal SiC substrate and a new ingot 12 are obtained from the ingot 1. Thereafter, when the ingot 12 is further cut, the above process is repeated after the cut surface 32 of the ingot 12 is polished to be used as the incident surface of the laser light L. If necessary, the cut surfaces 21a, 22a, 22b, 23a, and 23b of the cut pieces 21, 22, and 23 may be polished and flattened. Thereby, a plurality of hexagonal SiC substrates are manufactured.

  As described above, in the workpiece cutting method according to the present embodiment, the laser beam L is sequentially irradiated along each of the planned cutting surfaces 5A, 5B, and 5C of the ingot 1 made of the hexagonal SiC crystal 10. Thus, the modified regions 7 are sequentially formed in the ingot 1 along the planned cutting surfaces 5A, 5B, and 5C. At this time, the pitch between one irradiation point LP of the laser beam L and the other irradiation point LP closest to the one irradiation point LP is set so that cracks generated from the modified region 7 are c in the hexagonal SiC crystal 10. A predetermined pitch PT (for example, a range of 1 μm or more and 10 μm or less) extending along the surface is set.

  For this reason, when cutting the ingot 1 along the planned cutting surfaces 5A, 5B, 5C, c-plane cracks extending from the modified region 7 along the c-plane are formed inside the ingot 1. Since the c-plane crack facilitates cutting along the planned cutting surfaces 5A, 5B, and 5C of the ingot 1, the ingot 1 can be cut in a short time, and the throughput can be improved.

  Moreover, in the workpiece cutting method according to the present embodiment, when the ingot 1 is cut along the scheduled cutting surfaces 5A, 5B, and 5C, the c-plane crack is generated as described above. The ingot 1 can be accurately cut along 5A, 5B, and 5C. Therefore, the amount of polishing for flattening the cut surface of the cut piece cut out from the ingot 1 and the cut surface of the ingot 1 can be reduced, and the material loss can be reduced.

  In the processing object cutting method according to the present embodiment, as described above, after forming the modified region 7 by sequentially irradiating the laser light L along each of the scheduled cutting surfaces 5A, 5B, 5C, The ingot 1 is sequentially cut along each of the scheduled cutting surfaces 5A, 5B, 5C. For this reason, for example, compared with the case where the formation of the modified region 7 and the cutting of the ingot 1 are repeated alternately, the cutting of the ingot 1 can be efficiently performed a plurality of times. In particular, as compared with the case where the formation of the modified region 7 and the cutting of the ingot 1 are repeated alternately, it is more efficient because it is not necessary to polish the incident surface of the laser light L every time it is cut.

  Further, in the processing object cutting method according to the present embodiment, the cutting target surfaces are separated from the incident surface (surface 3) of the laser beam L in order (that is, in order of the cutting planned surfaces 5A, 5B, and 5C). Then, the modified region 7 is formed by irradiating the laser beam L. For this reason, it is possible to prevent the modified region 7 already formed from interfering with the transmission of the laser light L.

  The first and second embodiments described above describe one embodiment of the workpiece cutting method according to the present invention. Therefore, the workpiece cutting method according to the present invention is not limited to the workpiece cutting method according to the first and second embodiments described above. The processing object cutting method according to the present invention arbitrarily changed the processing object cutting method according to the first and second embodiments described above without changing the gist of each claim described in the claims. Can be.

  For example, in the processing object cutting method according to the first and second embodiments, when the laser beam L is irradiated, the condensing point P of the laser beam L is relatively moved in a spiral shape along the planned cutting surface. However, the mode of irradiation with the laser beam L is not limited to this. For example, when the laser beam L is irradiated, the condensing point P of the laser beam L can be linearly moved along the planned cutting surface 5 as shown in FIG. In FIG. 17, an orthogonal coordinate system S is shown. 17 to 19 are plan views of the ingot 1.

  In this case, first, for example, the condensing point P of the laser beam L is positioned at one end of the planned cutting surface 5 and along the planned cutting surface 5 in the positive x-axis direction (the direction of the arrow A5 in the figure). The condensing point P of the laser beam L is relatively moved. When the condensing point P of the laser light L reaches the other end of the planned cutting surface 5, the position of the condensing point P of the laser light L in the y-axis direction is changed. Then, the condensing point P of the laser light L is relatively moved along the planned cutting surface 5 in the negative x-axis direction (the direction of the arrow A6 in the figure). That is, in this case, the laser beam is changed while alternately changing the traveling direction of the condensing point P of the laser light L according to the position of the condensing point P of the laser light L in the planned cutting plane 5 in the y-axis direction. The L condensing point P is linearly moved along the planned cutting surface 5.

  By irradiating the laser beam L in this way, as shown in FIG. 18, a plurality of linear modified regions 7 arranged in parallel to each other in the y-axis direction and extending in the x-axis direction are cut to the cutting plane. 5 is formed. Also in this case, the laser beam L is irradiated such that one irradiation point LP of the laser beam L and another irradiation point LP closest to the one irradiation point LP have a predetermined pitch PT. More specifically, in this case, as shown in FIG. 19, the irradiation points LP of the laser light L are arranged along the planned cutting surface 5 to form a plurality of irradiation point rows R.

Therefore, in this case, as in the case described above, in some cases irradiation point LP 1 of the next irradiation point LP 2 (or irradiation point LP 3 above) is closest to the irradiation point LP 1 (i.e. , irradiation point LP 2 adjacent to the irradiation point LP 1 the x-axis direction (or the irradiation point LP 3) is, when the closest to the irradiation point LP 1 is), the irradiation point LP 1 and the next irradiation point LP 2 ( or the previous irradiation point LP 3) and the pitch (or pulse pitch) P 12 is set to be a predetermined pitch PT. That is, in this case, the pitch between the irradiation points LP in the x-axis direction is set to a predetermined pitch PT by adjusting the pulse pitch.

Alternatively, when the irradiation point LP 1 has to belong to the n-th column R n of irradiation point sequence R, to its previous (or the next) position corresponding to the irradiation point LP1 in the first n-1 rows R n-1 When a certain irradiation point LP 4 is closest to the irradiation point LP 1 (that is, when the irradiation point LP 4 adjacent to the irradiation point LP 1 in the y-axis direction is closest to the irradiation point LP 1 ), the irradiation point sequence R by the distance between each row between the predetermined pitch PT, the n-th column R n predetermined pitch pitch P 14 between the irradiation point LP 1 and the n-1 row irradiation point LP 4 of R n-1 of Let it be PT. The interval between the irradiation point rows R can be adjusted, for example, by controlling the degree of movement of the condensing point P of the laser light L in the y-axis direction. That is, in this case, the pitch between the irradiation points LP in the y-axis direction is set to a predetermined pitch by adjusting the interval between the irradiation point rows R.

  The pitch between the irradiation points LP may be set to a predetermined pitch PT in both the x-axis direction and the y-axis direction by adjusting both the interval between the irradiation point rows R and the pulse pitch. .

  Further, at a plurality of positions in the x-axis direction, by further irradiating the laser beam L while linearly moving the condensing points P of the laser beam L linearly in the y-axis direction, a plurality of modifications extending in the y-axis direction. Region 7 may be further formed. In that case, the modified region 7 is formed in a lattice shape along the planned cutting surface 5 inside the ingot 1. Therefore, the irradiation points LP of the laser light L are arranged more densely along the planned cutting surface 5, so that c-plane cracks are likely to spread.

  In the processing object cutting method according to the first and second embodiments, when irradiating the laser light L, for example, the pulse width of the laser light L is controlled under the control of the laser light source control unit 102. Can do. For example, by setting the pulse width of the laser light L to less than 20 ns or greater than 100 ns, c-plane cracks from the modified region 7 can be more suitably generated.

  In the first and second embodiments, when the modified region 7 is formed by irradiating the laser beam L, the laser beam L may be simultaneously focused on a plurality of points on the planned cutting surface ( Multi-point processing). FIG. 20 is an enlarged photograph showing the state of the planned cutting surface when multipoint processing is performed. In this case, as shown in FIG. 20, a plurality of (three in this case) modified regions 7 can be formed at the same time, so that the ingot 1 can be cut more efficiently. It becomes.

  Moreover, the aspect of cutting the ingot 1 is not limited to the aspect of the first and second embodiments described above. For example, the ingot 1 may be cut by removing the layer in which the modified region 7 is formed in the ingot 1 by etching.

  Furthermore, in the first and second embodiments described above, the ingot 1 made of a hexagonal SiC crystal is used as the processing object, but the processing object is not limited to such an ingot 1. For example, a wafer obtained by cutting the ingot 1 may be used as the processing object made of a hexagonal SiC crystal. In this case, first, after preparing the ingot 1, the ingot 1 is cut in advance with a wire saw or the like to obtain a wafer having a desired thickness for a plurality of hexagonal SiC substrates. Thereafter, the cut surface of the obtained wafer is polished. In this way, a wafer is prepared as a processing object made of hexagonal SiC crystal. Then, the wafer can be cut (sliced) into a plurality of pieces by performing the subsequent steps on the wafer as in the case of the ingot 1.

DESCRIPTION OF SYMBOLS 1 ... Ingot (work object), 3 ... Surface (incident surface of pulse laser beam), 5A ... Planned cutting surface (first cutting planned surface), 5B ... Planned cutting surface (second cutting planned surface), 7 ... modified region, 10 ... hexagonal SiC crystal, L ... laser light (pulse laser light), LP, LP 1, LP 2, LP 3, LP 4 ... irradiation point.

Claims (5)

  1. A processing object cutting method for forming a modified region in the processing object by irradiating a processing object made of a hexagonal SiC crystal with a pulse laser beam, and cutting the processing object,
    The object to be processed along the first scheduled cutting surface of the object to be processed such that one irradiation point of the pulse laser beam and another irradiation point closest to the one irradiation point have a predetermined pitch. Is irradiated with the pulse laser beam to form the modified region along the first planned cutting surface, and to generate a crack extending from the modified region along the c-plane of the hexagonal SiC crystal. Process,
    After forming the modified region along the first planned cutting surface, the workpiece to be processed in a state in which a crack extending along the c-plane of the hexagonal SiC crystal is generated as the first planned cutting surface. and a step of disconnecting along,
    The first planned cutting surface forms an off-angle angle with the c-plane of the hexagonal SiC crystal,
    The predetermined pitch is a pitch such that cracks generated from the modified region during the formation of the modified region extend along the c-plane of the hexagonal SiC crystal. .
  2. After cutting the workpiece along the first scheduled cutting surface, one irradiation point of the pulse laser beam and another irradiation point closest to the one irradiation point are set to the predetermined pitch. And forming the modified region along the second scheduled cutting surface by irradiating the workpiece with the pulsed laser light along the second planned cutting surface of the workpiece. ,
    Cutting the workpiece along the second scheduled cutting surface after forming the modified region along the second scheduled cutting surface, and further comprising:
    2. The workpiece cutting method according to claim 1, wherein the second scheduled cutting surface forms an off-angle angle with a c-plane of a hexagonal SiC crystal.
  3. One irradiation of the pulse laser beam after forming the modified region along the first scheduled cutting surface and before cutting the workpiece along the first scheduled cutting surface A point and another irradiation point closest to the one irradiation point are positioned closer to the incident surface side of the pulsed laser light on the object to be processed than the first scheduled cutting surface so as to have the predetermined pitch. Irradiating the workpiece with the pulsed laser light along a second planned cutting surface to form the modified region along the second planned cutting surface;
    Cutting the workpiece along the second scheduled cutting surface after forming the modified region along the second scheduled cutting surface, and further comprising:
    The second planned cutting plane forms an off-angle angle with the c-plane of the hexagonal SiC crystal,
    The processing object cutting method according to claim 1, wherein:
  4.   The said predetermined pitch is 1 micrometer or more and less than 10 micrometers, The processing target object cutting method as described in any one of Claims 1-3 characterized by the above-mentioned.
  5.   5. The workpiece cutting method according to claim 1, wherein a pulse width of the pulsed laser light is less than 20 ns or greater than 100 ns.
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