CN107706120B - The packaging method of ultra-thin wafers - Google Patents
The packaging method of ultra-thin wafers Download PDFInfo
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- CN107706120B CN107706120B CN201710895810.1A CN201710895810A CN107706120B CN 107706120 B CN107706120 B CN 107706120B CN 201710895810 A CN201710895810 A CN 201710895810A CN 107706120 B CN107706120 B CN 107706120B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 32
- 235000012431 wafers Nutrition 0.000 title abstract description 111
- 238000005520 cutting process Methods 0.000 claims abstract description 59
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 1
- 210000004379 membrane Anatomy 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a kind of packaging method of ultra-thin wafers, the ultra-thin wafers are an integral molding structure, comprising: ultra-thin wafers ontology is greater than the thickness of the ultra-thin wafers ontology with the ultra-thin wafers ontology week extrorse outer ring, the thickness of the outer ring is set to；The front of outer ring and the front of ultra-thin wafers ontology are concordant；The back side of outer ring protrudes from the back side of ultra-thin wafers ontology；The packaging method of the ultra-thin wafers includes: step of membrane sticking: pasting counterdie at the back side of the ultra-thin wafers, is bonded ultra-thin wafers ontology and outer ring with counterdie；Cutting step: excision outer ring is cut from the front of ultra-thin wafers ontology, to be cut into several chips；Patch encapsulation step: the chip that cutting is formed is separated from counterdie, and moves on lead frame and is packaged.
Description
Technical Field
The invention relates to the field of semiconductor packaging, in particular to a packaging method of an ultrathin wafer.
Background
At present, ultrathin wafers are more and more widely applied, and are easy to deform due to the fact that the thickness of the ultrathin wafers ranges from 50 micrometers to 100 micrometers, and the ultrathin wafers are damaged in different degrees in all working procedures if the ultrathin wafers are subjected to film pasting, cutting and chip mounting packaging through a traditional packaging process with great difficulty.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a method for packaging an ultra-thin wafer, so as to solve the problem in the prior art that the ultra-thin wafer is difficult to be packaged by using the conventional packaging method, and the ultra-thin wafer is damaged to different degrees.
In order to solve the above technical problems, the present invention provides a method for packaging an ultra-thin wafer, wherein the ultra-thin wafer is an integrally formed structure, and the method comprises: the ultrathin wafer comprises an ultrathin wafer body and an outer ring arranged on the circumferential outer edge of the ultrathin wafer body, wherein the thickness of the outer ring is greater than that of the ultrathin wafer body; the front surface of the outer ring is flush with the front surface of the ultrathin wafer body; the back surface of the outer ring protrudes out of the back surface of the ultrathin wafer body; the packaging method of the ultrathin wafer comprises the following steps: film pasting: adhering a bottom film to the back surface of the ultrathin wafer, so that the ultrathin wafer body and the outer ring are both adhered to the bottom film; cutting: cutting off the outer ring, and cutting the front surface of the ultrathin wafer body to cut out a plurality of chips; a patch packaging step: and separating the chips formed by cutting from the base film, and moving the chips to a lead frame for packaging.
In a preferable scheme, in the step of film pasting, the ultrathin wafer is placed in a vacuum film pasting machine, the preheating temperature is up to 60 ℃, and the bottom film is pasted on the back surface of the ultrathin wafer under the atmospheric pressure condition of less than 50 millibars (mbar), so that the ultrathin wafer body and the outer ring are both pasted with the bottom film.
In a preferred embodiment, the base film is a UV film.
In a preferred scheme, in the step of cutting off the outer ring, a cutter is used for carrying out circle-drawing cutting along the connecting position of the ultrathin wafer body and the outer ring; wherein, the carborundum granularity of this cutter is 8.0 microns +/-0.6 microns, and the rotational speed of this cutter is 30 kilo revolutions per minute, and the cutter is cut with the speed that every second moving angle is 5.
In a preferred scheme, in the cutting step, the first cutter and the second cutter are used for cutting the ultrathin wafer body in sequence: firstly, cutting in a direction perpendicular to the ultrathin wafer body by using a first tool, and cutting the ultrathin wafer body into a preset depth; then the second cutter is also vertical to the ultrathin wafer body, the feeding direction of the second cutter is the same as that of the first cutter, and the second cutter continues to cut on the cutting mark of the first cutter until the ultrathin wafer body is cut off and stops in the bottom film; wherein, the thickness of the first cutter is larger than that of the second cutter so that the width of the cutting mark of the first cutter is larger than that of the cutting mark of the second cutter, the rotating speed of the first cutter is 40-50 kilorevolutions per minute (KRPM), and the rotating speed of the second cutter is 18-25 kilorevolutions per minute (KRPM).
In a preferable scheme, the thickness of the first cutter is 25-30 micrometers, and the thickness of the second cutter is 10-15 micrometers; the first cutter and the second cutter are both made of carborundum, the granularity of the carborundum contained in the first cutter is 3.0 microns +/-0.4 microns, and the granularity of the carborundum contained in the second cutter is 2.0 microns +/-0.4 microns.
In a preferred embodiment, the cutting step further comprises: the cutting depth of the first cutter is 25% of the total thickness of the ultrathin wafer body, and the cutting depth of the second cutter is 30% of the total thickness of the bottom film.
In a preferred embodiment, in the step of mounting, the chip is lifted up from the back surface of the ultra-thin wafer body through the bottom film by using the ejector pins distributed in a square matrix, and the chip is sucked up from the front surface of the ultra-thin wafer by using the suction nozzle, so that the chip is separated from the bottom film.
In a preferred scheme, the centers of the square matrix distribution thimbles, the center of the chip and the center of the suction nozzle are all on the same straight line.
In a preferable scheme, the suction nozzle comprises a suction end, the size of the end surface of the suction nozzle is smaller than that of the chip, a cross concave part is arranged in the middle of the end surface of the suction end, a vacuum suction hole is formed in the center of the concave part, and the suction end of the suction nozzle faces the front surface of the ultrathin wafer body and enables the concave part to form a vacuum cavity so as to suck the chip.
Compared with the prior art, the invention has the following beneficial effects: the packaging method of the ultrathin wafer is suitable for the ultrathin wafer with the outer ring, and the thin wafer body can be supported in the outer ring because the thickness of the outer ring is larger than that of the ultrathin wafer body, so that the transportation and the film pasting processing are facilitated. Particularly, the film is firstly pasted on the back surface of the ultrathin wafer, and then the outer ring is cut off, so that the problems of easy deformation, difficult processing and the like caused by small thickness of the ultrathin wafer body are avoided, the processing efficiency of the chip is ensured, and the yield is improved.
Drawings
Fig. 1 is a schematic structural diagram of an ultra-thin wafer according to the present embodiment.
Fig. 2 is a schematic cross-sectional view of an ultra-thin wafer according to the present embodiment.
FIG. 3 is a flowchart illustrating a method for packaging an ultra-thin wafer according to an embodiment of the present invention.
Fig. 4 is a flowchart illustrating the detailed steps of the method for packaging an ultra-thin wafer according to the present embodiment.
Fig. 5 is a schematic structural view of the thimble seat of the embodiment.
Fig. 6 is a schematic view of a distribution structure of the thimble on the thimble seat in the embodiment.
FIG. 7 is a schematic view showing the structure of the nozzle tip in the present embodiment.
Fig. 8 is a schematic structural view of a section of the suction nozzle of the present embodiment.
The reference numerals are explained below: 2. an ultra-thin wafer; 21. an ultra-thin wafer body; 22. an outer ring; 3. a thimble seat; 31. a thimble; 32. perforating; 4. a suction nozzle; 41. an adsorption end; 411. a recess; 412. and (4) vacuum sucking holes.
Detailed Description
Exemplary embodiments that embody features and advantages of the invention are described in detail below in the specification. It is to be understood that the invention is capable of other embodiments and that various changes in form and details may be made therein without departing from the scope of the invention and the description and drawings are to be regarded as illustrative in nature and not as restrictive.
Referring to fig. 1 to 2, the method for packaging an ultra-thin wafer provided in the present embodiment is suitable for a wafer with a thickness of 50 microns to 100 microns. The ultra-thin wafer 2 of this thickness range includes: the ultrathin wafer body 21 and the outer ring 22 integrally formed therewith, the outer ring 22 is disposed on the circumferential outer edge of the ultrathin wafer body 21, and the thickness of the outer ring 22 is greater than that of the ultrathin wafer body 21 so as to support the ultrathin wafer body 21 in the outer ring 22. The ultra-thin wafer 2 has a front surface and a back surface, wherein the front surface of the ultra-thin wafer 2 is a plane so that the outer ring 22 of the front surface is flush with the surface of the ultra-thin wafer body 21; the back surface of the ultra-thin wafer 2 is of a structure with high periphery and low middle, so that the outer ring 22 protrudes out of the surface of the ultra-thin wafer body 21 on the surface, and a step structure is formed at the connecting position of the outer ring 22 and the ultra-thin wafer body 21.
With reference to fig. 3 and fig. 4, the method for packaging an ultra-thin wafer of the present embodiment sequentially includes: the method comprises the steps of film pasting, cutting and patch packaging.
The step of attaching a film S1 includes: and adhering a bottom film to the back surface of the ultrathin wafer 2, so that the ultrathin wafer body 21 and the outer ring 22 are both adhered to the bottom film.
In this step, the basement membrane adopts the UV membrane, and the workstation of vacuum sticking film machine is all arranged in to ultra-thin wafer 2 and UV membrane and is laminated. Because the back surface of the ultra-thin wafer 2, the height of the outer ring 22 is different from that of the surface of the ultra-thin wafer body 21, so that the joint of the two has a step structure, and the gas ring is easily generated at the position in the process of bonding. In this embodiment, the temperature is first preheated to 60 ℃, the UV film is attached to the back surface of the ultra-thin wafer 2 under the atmospheric pressure condition of less than 50 millibar (mbar), and the ultra-thin wafer body 21 and the outer ring 22 are both attached to the UV film, under this condition, the width of the gas ring can be ensured to be less than 600 micrometers, and the gas ring within this width range ensures that the outer edge of the ultra-thin wafer body 21 is well adhered to the UV film when the outer ring 22 is cut off, so that the edge breakage degree is reduced in the subsequent cutting step, the problems of water seepage and silicon powder seepage caused by poor attachment of the outer edge of the ultra-thin wafer body 21 to the UV film are prevented, and the difficulty of separation from the UV film after the ultra-thin wafer body 21 is cut into chips is reduced.
The cutting step S2 includes: the outer ring 22 is cut off, and the ultra-thin wafer body 21 is cut from the front surface thereof to cut out a plurality of chips.
Specifically, the present step includes two substeps performed before and after: 1) step S21, cutting off the outer ring 22, and 2) step S22, cutting out chips.
In step S21, a ring cutting tool with diamond grain size of 8.0 ± 0.6 microns is set on the cutting device, and the ring cutting tool is calibrated on the front surface of the ultra-thin wafer 2 based on the center of the ultra-thin wafer 2, so as to reduce the problem of off-cut in the subsequent steps. Then, a ring cutting tool is used for cutting in a circle-drawing mode along the connecting position of the ultrathin wafer body 21 and the outer ring 22; wherein, in the ring cutting process, the rotating speed of the ring cutting tool is 30 kilo-revolutions per minute, and the ring cutting tool cuts at the speed of 5 degrees of moving angle per second, under the condition, the damage of the ring cutting tool in the cutting process is ensured, and simultaneously the fracture of the edge of the ultra-thin wafer body 21 is prevented.
The chip cutting in step S22 is performed by a double-blade two-blade cutting method. And a first cutter and a second cutter are respectively arranged on a first main shaft and a second main shaft of the cutting device, and the first main shaft and the second main shaft are separated by a certain distance, so that the first cutter and the second cutter cut the same cutting mark position in the same direction in time and in sequence along with the feeding of the feeding device.
Specifically, the ultra-thin wafer body 21 is cut by the first cutter and the second cutter in sequence for the same position: firstly, a first cutter with the rotating speed of 40-50 kilorevolutions per minute (KRPM) is used for cutting into the ultrathin wafer body 21 for a preset depth, wherein the first cutter is perpendicular to the ultrathin wafer body 21 and cuts along a cutting path; then, the second tool is also perpendicular to the ultra-thin wafer body 21, the feeding direction of the second tool is the same as that of the first tool, the second tool continues to cut on the cut mark of the first tool, and the second tool cuts at a rotating speed of 18-25 kilorevolutions per minute (KRPM) until the ultra-thin wafer body 21 is cut and stops in the bottom film. The first cutter and the second cutter are both made of carborundum, the granularity of the carborundum contained in the first cutter is 3.0 microns +/-0.4 microns, and the granularity of the carborundum contained in the second cutter is 2.0 microns +/-0.4 microns. Further, the thickness of the first cutter is 25-30 micrometers, and the thickness of the second cutter is 10-15 micrometers, so that the thickness of the first cutter is larger than that of the second cutter, and the width of the cut mark of the first cutter is larger than that of the cut mark of the second cutter.
It should be noted that, when the first tool and the second tool cut the ultrathin wafer body 21 at the same position, the tool mark of the second tool is located in the middle of the width direction of the tool mark of the first tool, that is, the axis of the tool mark of the first tool overlaps with the axis of the tool mark of the second tool.
Preferably, in step S2, before the cutting the chip on the ultra-thin wafer body 21, the method further includes measuring the thickness of the ultra-thin wafer body 21 and the bottom film by using a high-precision control system, so that the first tool cuts into the ultra-thin wafer body 21 to a depth of 25% of the total thickness of the ultra-thin wafer body 21, and the second tool cuts into the bottom film to a depth of 30% of the total thickness of the bottom film.
The patch packaging step S3 includes: and separating the chips formed by cutting from the base film, and moving the chips to a lead frame for packaging.
With continued reference to fig. 5 to 8, in the process of separating the die from the bottom film, the die is lifted up from the back surface of the ultra-thin wafer body 21 through the bottom film by the ejector pins 31 distributed in a square matrix, and the die is sucked up from the front surface of the ultra-thin wafer body 21 by the suction nozzle 4, so that the die is separated from the bottom film.
Specifically, the thimbles 31 distributed in a square matrix are arranged on the square thimble seat 3, and the diameter of the tip of each thimble 31 is 0.3 mm. The thimble seat 3 is located at one side of the back surface of the ultra-thin wafer body 21, a plurality of through holes 32 are arranged on the end surface of the thimble seat 3 facing the back surface of the ultra-thin wafer body 21, and the thimble 31 extends outwards from the inside of the thimble seat 3 along the through holes 32 to jack up the chip facing the back surface of the ultra-thin wafer body 21. It should be noted that the plurality of through holes 32 are distributed on the thimble seat 3 in a square matrix, and in practical use, the number of the protruding thimbles 31 is adjusted according to the size and thickness of the chip, and the plurality of protruding thimbles are also distributed in a square matrix.
The suction nozzle 4 is located on one side of the front surface of the ultra-thin wafer body 21, the suction nozzle 4 comprises a suction end 41, the size of the end surface of the suction end 41 is smaller than that of a chip, wherein a cross concave portion 411 is arranged in the middle of the end surface of the suction end 41, a vacuum suction hole 412 is formed in the center of the concave portion 411, the suction end 41 of the suction nozzle 4 faces the front surface of the ultra-thin wafer body 21, the concave portion 411 forms a vacuum cavity so as to suck the chip, and the cross vacuum cavity enables the suction nozzle 4 to suck the chip with more uniform force, so that damage to the chip is reduced.
It should be noted that the distribution size of the plurality of ejector pins 31 acting on the chip and the size of the suction end 41 are both smaller than the size of the chip; meanwhile, the centers of the ejector pins distributed in the square matrix, the center of the chip and the center of the suction nozzle 4 are all on the same straight line, and a group of opposite outer edges distributed on the plurality of ejector pins 31 acting on the chip and a group of opposite outer edges of the suction end 41 are all parallel to two edges of the chip along the length direction. It should be noted that the center of the square matrix-distributed thimble is the central position where the plurality of thimbles acting on the chip are distributed.
Preferably, the length of the side of the suction end 41 perpendicular to the chip width direction is 5 to 10 mils smaller than the chip width. When the chip is separated from the base film, the ejector pin 31 and the suction nozzle 4 simultaneously act on the chip.
In step S3, the square matrix thimble 31 is used, so that the thimble 31 is more uniformly and tightly arranged, the chip is jacked up to be more uniformly stressed, and the chip is prevented from breaking. Preferably, the suction end 41 of the suction nozzle 4 of the present embodiment is made of a soft material, which has a lower hardness than the conventional suction nozzle, and reduces the damage to the chip caused by the contact of the suction nozzle 3 with the chip.
In step S3, bonding wires are first performed after the chip is moved onto the lead frame, so that the chip is bonded to the pins on the lead frame by the bonding wires. And then, carrying out plastic package, curing, deburring, rib cutting and separating, pin electroplating, testing and marking, packaging and delivering to finish the ultra-thin wafer packaging, as shown in figure 4. The specific operations of wire bonding, plastic encapsulation and the subsequent processes can refer to the prior art, and the invention is not described in detail.
The packaging method of the ultrathin wafer is suitable for the ultrathin wafer with the outer ring, and the thin wafer body can be supported in the outer ring because the thickness of the outer ring is larger than that of the ultrathin wafer body, so that the transportation and the film pasting processing are facilitated. Particularly, the film is firstly pasted on the back surface of the ultrathin wafer, and then the outer ring is cut off, so that the problems of easy deformation, difficult processing and the like caused by small thickness of the ultrathin wafer body are avoided, the processing efficiency of the chip is ensured, and the yield is improved.
While the present invention has been described with reference to the above exemplary embodiments, it is understood that the terminology used is intended to be in the nature of words of description and illustration, rather than of limitation. As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiments are not limited by any of the details of the foregoing description, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the meets and bounds of the claims, or equivalences of such meets and bounds are therefore intended to be embraced by the appended claims.
Claims (7)
1. A packaging method of an ultrathin wafer is characterized in that the ultrathin wafer is of an integrally formed structure, the thickness of the ultrathin wafer is 50-100 micrometers, and the packaging method comprises the following steps: the ultrathin wafer comprises an ultrathin wafer body and an outer ring arranged on the circumferential outer edge of the ultrathin wafer body, wherein the thickness of the outer ring is greater than that of the ultrathin wafer body; the front surface of the outer ring is flush with the front surface of the ultrathin wafer body; the back surface of the outer ring protrudes out of the back surface of the ultrathin wafer body;
the packaging method of the ultrathin wafer comprises the following steps:
film pasting: placing the ultrathin wafer in a vacuum film sticking machine, preheating to 60 ℃, sticking a bottom film on the back of the ultrathin wafer under the condition of atmospheric pressure less than 50 millibars (mbar), and sticking the ultrathin wafer body and the outer ring with the bottom film;
cutting: cutting off the outer ring, and cutting the front surface of the ultrathin wafer body to cut out a plurality of chips;
a patch packaging step: separating the chip formed by cutting from the bottom film, and transferring to a lead frame for packaging; the separating the cut chips from the base film includes: jacking the chip from the back of the ultrathin wafer body through a bottom film by using thimbles distributed in a square matrix, and simultaneously sucking the chip from the front of the ultrathin wafer by using a suction nozzle; the suction nozzle comprises an adsorption end, the size of the end face of the adsorption end is smaller than that of a chip, a cross concave part is arranged in the middle of the end face of the adsorption end, a vacuum suction hole is formed in the center of the concave part, and the adsorption end of the suction nozzle faces the front face of the ultrathin wafer body and enables the concave part to form a vacuum cavity so as to suck the chip.
2. The method of claim 1, wherein the base film is a UV film.
3. The method for packaging an ultra-thin wafer as claimed in claim 1, wherein in the step of cutting off the outer ring, a cutting tool is used to perform a circle-drawing type cutting along a position where the ultra-thin wafer body and the outer ring are connected;
wherein, the carborundum granularity of this cutter is 8.0 microns +/-0.6 microns, and the rotational speed of this cutter is 30 kilo revolutions per minute, and the cutter is cut with the speed that every second moving angle is 5.
4. The method for packaging an ultra-thin wafer as claimed in claim 1, wherein in the cutting step, the ultra-thin wafer body is cut by using a first cutter and a second cutter in sequence: firstly, cutting in a direction perpendicular to the ultrathin wafer body by using a first tool, and cutting the ultrathin wafer body into a preset depth; then the second cutter is also vertical to the ultrathin wafer body, the feeding direction of the second cutter is the same as that of the first cutter, and the second cutter continues to cut on the cutting mark of the first cutter until the ultrathin wafer body is cut off and stops in the bottom film; wherein,
the thickness of the first cutter is larger than that of the second cutter so that the width of the cutting mark of the first cutter is larger than that of the cutting mark of the second cutter, the rotating speed of the first cutter is 40-50 kilorevolutions per minute (KRPM), and the rotating speed of the second cutter is 18-25 kilorevolutions per minute (KRPM).
5. The method for packaging an ultra-thin wafer as claimed in claim 4, wherein the thickness of the first cutter is 25 microns to 30 microns, and the thickness of the second cutter is 10 microns to 15 microns;
the first cutter and the second cutter are both made of carborundum, the granularity of the carborundum contained in the first cutter is 3.0 microns +/-0.4 microns, and the granularity of the carborundum contained in the second cutter is 2.0 microns +/-0.4 microns.
6. The method for packaging an ultra-thin wafer as claimed in claim 4, wherein the step of cutting further comprises: the cutting depth of the first cutter is 25% of the total thickness of the ultrathin wafer body, and the cutting depth of the second cutter is 30% of the total thickness of the bottom film.
7. The method for packaging an ultra-thin wafer as claimed in claim 1, wherein the centers of the square matrix pins, the chip and the suction nozzle are aligned.
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| CN111017626B (en) * | 2019-12-23 | 2021-09-03 | 青岛歌尔微电子研究院有限公司 | Film sticking device and film sticking method |
| CN111070448A (en) * | 2019-12-30 | 2020-04-28 | 成都先进功率半导体股份有限公司 | Wafer ring cutting method |
| CN111799186A (en) * | 2020-07-15 | 2020-10-20 | 芯盟科技有限公司 | Method for bonding chip to wafer and wafer with chip |
| CN112975148B (en) * | 2021-02-07 | 2022-12-13 | 苏州镭明激光科技有限公司 | Wafer laser invisible cutting equipment and cutting method |
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