JP2007019385A - Manufacturing method of semiconductor chip - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor chips by which degrading of a processing yield caused by degrading of flexural strength is prevented in manufacturing of the semiconductor chips using plasma dicing. <P>SOLUTION: The manufacturing method of the semiconductor chips for manufacturing the semiconductor chips 1d by dividing a semiconductor wafer by each semiconductor device forms a mask for masking an area divided by a street line, thereafter carries out mask inspection for detecting the defect of the mask. Then, the method carries out plasma dicing to semiconductor wafers judged to be successful in the mask inspection. Regarding semiconductor wafers judged to be unsuccessful, the method removes a defective mask and thereafter forms a mask again to prevent a failure caused by carrying out plasma dicing using a mask comprising a defect. Thus, degradation is prevented in a processing yield caused by degrading of flexural strength. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor chip manufacturing method for manufacturing a semiconductor chip by dividing a semiconductor wafer on which a plurality of semiconductor devices are formed into individual semiconductor wafers.

  A semiconductor chip mounted on a substrate of an electronic device or the like is manufactured by cutting out a semiconductor device on which a circuit pattern is formed in a wafer state. 2. Description of the Related Art In recent years, with the increasing difficulty in handling wafer-state semiconductor devices due to thinning of semiconductor devices, plasma dicing is used in which dicing is performed by plasma etching to divide a semiconductor wafer into individual semiconductor devices. (See, for example, Patent Document 1).

In the plasma dicing, the semiconductor wafer is cut along the street lines by performing plasma etching in a state where portions other than the street lines indicating the lattice-shaped division positions are masked with a resist film. The mask formation performed prior to the plasma dicing is performed by forming a resist film on the back surface of the circuit formation surface that has been thinned by mechanical polishing in advance, and photolithography, laser processing, etc. This is done by removing selectively.
JP 2004-172364 A

  However, in the plasma dicing shown in the above prior art, there is a case in which the bending strength of the semiconductor chip after dicing is lowered due to various defects of the formed mask. That is, since the mask formation is performed on a polished surface where fine polishing marks generated during mechanical polishing for thinning are present, fine polishing powder remains on the street line at the time of resist film formation, or When a mask pattern is formed by photolithography, the presence of these foreign substances may cause a problem that induces a pinhole.

  When plasma dicing is performed in a state where such a mask includes a defect, the semiconductor wafer is cut in a state where notches and protrusions exist on the dicing edge without removing the street lines in a normal shape. Edge defects and fatal defects in which the semiconductor wafer in the pinhole portion of the mask is etched by plasma and a through hole is generated. As described above, the conventional method of manufacturing a semiconductor chip using plasma dicing has a problem in that the processing yield is reduced due to a reduction in the bending strength of the semiconductor chip after dicing due to a mask defect.

  Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor chip that can prevent a reduction in processing yield due to a decrease in bending strength in the manufacture of a semiconductor chip using plasma dicing.

The semiconductor chip manufacturing method according to claim 1, wherein a semiconductor wafer is manufactured by dividing a semiconductor wafer in which a semiconductor device is formed in each of a plurality of regions partitioned by street lines into individual semiconductor devices. A manufacturing method, a protective sheet attaching step of attaching a protective sheet to a semiconductor device forming surface side of a semiconductor wafer, and a back polishing step of thinning the semiconductor wafer by polishing the back side of the semiconductor wafer attached with the protective sheet And after the back surface polishing step, a mask forming step for forming a mask covering the plurality of regions on the back surface of the semiconductor wafer, a mask inspection step for inspecting defects of the mask, and a pass in the mask inspection step. The semiconductor wafer is irradiated with plasma from the surface on which the mask is formed. A plasma dicing step of dividing the semiconductor wafer into a plurality of semiconductor chips for each semiconductor device by removing a portion not covered with the mask, and a mask removal step of removing the mask after the plasma dicing step; And a separation step of separating the divided semiconductor chip and the protective sheet.

  According to the present invention, after forming a mask covering the area partitioned by the street line, the defect of the mask is inspected, and plasma dicing is performed on the semiconductor wafer determined to be acceptable in the mask inspection, thereby Therefore, it is possible to prevent problems caused by performing plasma dicing using a mask containing, and to prevent a decrease in processing yield due to a decrease in bending strength.

(Embodiment 1)
FIG. 1 is a flowchart of a semiconductor chip manufacturing method according to the first embodiment of the present invention. FIGS. 2, 3, 4, and 5 are process explanatory diagrams of the semiconductor chip manufacturing method according to the first embodiment of the present invention. FIG. 6 is an explanatory diagram of mask defects in the manufacturing process of the semiconductor chip according to the first embodiment of the present invention.

  First, a method for manufacturing a semiconductor chip will be described with reference to FIGS. This semiconductor chip manufacturing method manufactures a semiconductor chip by dividing a semiconductor wafer in which a semiconductor device is formed in each of a plurality of regions partitioned by street lines indicating division positions into individual semiconductor devices. is there.

  In FIG. 1, first, a protective sheet attaching step of attaching a protective sheet for mechanical polishing to a semiconductor wafer is performed (ST1). That is, as shown to Fig.2 (a), the protective sheet 2 which can be peeled on the semiconductor device formation surface 1a side of the semiconductor wafer 1 is affixed. Next, a wafer back surface polishing step is executed (ST2). That is, as shown in FIG. 3, the semiconductor wafer 1 is placed on the chuck table 6 with the protective sheet 2 side facing down.

  Then, the back side of the semiconductor wafer 1 to which the protective sheet 2 is attached is mechanically polished by the polishing head 7 to thin the semiconductor wafer 1. As a result, the semiconductor wafer 1 initially having a thickness of about 750 μm is thinned to a thickness t of about 60 μm, as shown in FIG. In this wafer backside polishing, a work-affected layer 1c containing microcracks is generated on the polished surface 1b, and therefore a work-affected layer removal step for removing this is performed by plasma etching (ST3).

  FIG. 4 shows the configuration of the dry etching apparatus 10 used for this plasma etching. In FIG. 4, the inside of the vacuum chamber 11 is a processing chamber 12 that performs plasma processing under a reduced pressure atmosphere, and the inside of the processing chamber 12 is reduced to a pressure for plasma processing by driving the vacuum exhaust device 15. Is done. Inside the processing chamber 12, a high-frequency electrode 13 and a shower electrode 14 are disposed so as to face each other. On the upper surface of the high-frequency electrode 13, the semiconductor wafer 1 to be processed is placed with the protective sheet 2 on the lower surface side.

A high frequency power supply device 16 is electrically connected to the high frequency electrode 13. The shower electrode 14 is grounded to the ground portion 18, and a high frequency voltage is applied between the high frequency electrode 13 and the shower electrode 14 by driving the high frequency power supply device 16. A plurality of gas ejection holes 14 a are opened on the lower surface of the shower electrode 14, and the gas ejection holes 14 a are connected to a gas supply unit 17 that supplies a fluorine-based plasma processing gas.

  In the plasma processing, first, the semiconductor wafer 1 is placed on the high-frequency electrode 13, and a fluorine-based plasma generating gas is introduced into the processing chamber 12 by the gas supply unit 17 while the processing chamber 12 is evacuated by the vacuum exhaust device 15. (Here, a mixed gas of sulfur hexafluoride (SF6) and helium) is sprayed onto the semiconductor wafer 1, and a high frequency voltage is applied between the high frequency electrode 13 and the shower electrode 14 in this state. As a result, fluorine radicals and ions are generated by turning the fluorine-based gas into plasma, and plasma etching is performed by the chemical action of the fluorine radicals and the physical action of the accelerated ions.

  That is, when the surface of the semiconductor wafer 1 is irradiated with plasma, the work-affected layer 1c including fine microcracks is removed as shown in FIG. Note that this work-affected layer removal step is not an essential step, but it is desirable to perform the work-affected layer removal step before the mask formation step as shown in the first embodiment in order to ensure the bending strength. In the present embodiment, an example in which the work-affected layer removal step is performed by plasma etching is described, but alternative techniques such as chemical mechanical polishing may be used.

  Next, a mask formation process is performed (ST4). That is, after the back surface polishing step, a resist film having a thickness of about 5 to 20 μm is formed on the mechanically polished surface by a method such as resin film sticking or resin coating by spin coating. Next, only the portions corresponding to the street lines defining the individual semiconductor chips in the resist film are removed by a method such as photolithography or laser processing. As a result, as shown in FIG. 2D, a mask for plasma dicing, that is, a mask 3 covering a region partitioned by the street lines 3 a is formed on the back surface of the semiconductor wafer 1.

  Thereafter, a mask inspection is performed on the semiconductor wafer 1 after the mask formation (ST5). FIG. 5 shows an example of an inspection apparatus used for this mask inspection. FIG. 5 (a) shows the mask by image recognition, and FIG. 5 (b) shows the mask by three-dimensional measurement using a laser displacement meter. An example of detecting a defect is shown. That is, in the example shown in FIG. 5A, the semiconductor wafer 1 placed on the inspection table 20 is imaged by the camera 21, and the imaging result is recognized by the image recognition device 21, thereby detecting a defect as an image pattern. To do. In the example shown in FIG. 5B, the detection point of the laser displacement meter 23 is scanned in the vertical and horizontal directions on the surface of the semiconductor wafer 1 to detect the defect as a vertical displacement pattern.

  FIG. 6 shows an example of defects detected by mask inspection. An arrow a indicates a foreign substance in which polishing powder or the like during back surface polishing remains on the street line 3a, and an arrow b indicates a bridge that partially connects the mask 3 that should be separated through the street line 3a. c and d indicate edge defects in which the edge of the street line 3a is partially concave or convex, and the arrow d indicates a pinhole existing in the form of a through-hole in the mask 3. In the mask inspection step (ST5), at least one defect is inspected among the above-described pinhole, mask edge shape, and foreign matter located on the street line 3a.

  When plasma dicing is performed with foreign matter, bridges, and edge defects on the street line 3a, edge defects that follow these defective shapes are formed on the edges of the semiconductor chip after dicing, This is a factor that greatly reduces the bending strength of the semiconductor chip. Further, if the plasma dicing is performed with the pinholes existing, it becomes a fatal defect that the holes penetrate the semiconductor chip in the same shape as the pinholes. The mask inspection is performed in order to prevent waste due to performing plasma dicing while such a defect exists in the mask.

  After the mask inspection, pass / fail judgment of the result of the mask inspection is performed (ST6). Here, the semiconductor wafer 1 in which the above-described defects are detected is determined to be rejected, and a defective mask removing process for removing the mask 3 is executed by ashing using plasma for the semiconductor wafer determined to be rejected. (ST7). In this plasma ashing, the resist film constituting the mask is removed by ashing (ashing) by plasma processing using oxygen gas as a plasma generating gas. Then, the semiconductor wafer 1 after removal of the defective mask is sent to (ST4), mask formation is performed again, and the subsequent normal process is resumed.

  A plasma dicing process is performed for the semiconductor wafer 1 in which the mask inspection is determined to pass in (ST6) (ST8). Here, using the dry etching apparatus 10 shown in FIG. 4, the semiconductor wafer 1 is irradiated with plasma from the surface on which the mask 3 is formed. Thereby, the portion of the street line 3a not covered with the mask 3 in the semiconductor wafer 1 is removed by the chemical action of fluorine radicals and the physical action of accelerated ions. Then, as shown in FIG. 2E, by forming a dicing groove 1d that penetrates the entire thickness of the semiconductor wafer 1, the semiconductor wafer 1 is divided into a plurality of semiconductor chips 1e for each individual semiconductor device.

  Next, a mask removal step is performed, and the mask 3 is removed from each semiconductor chip 1e as shown in FIG. 2 (f) (ST9). This mask removal is performed by plasma ashing or mechanical polishing, as in (ST7). When the mask is removed by mechanical polishing, it is desirable to remove the work-affected layer formed on the back surface of the semiconductor chip 1e by this mechanical polishing by a method such as plasma etching or chemical mechanical polishing.

  Thereafter, the protective sheet is removed and the dicing sheet is pasted (ST10). That is, the semiconductor chip 1 e is transferred to the dicing sheet 4 spread on the wafer ring 5 while being attached to the protective sheet 2. And the some semiconductor chip 1e divided | segmented and the protection sheet 2 are isolate | separated in the state which stuck the some semiconductor chip 1e to the dicing sheet 4 (separation process). As a result, as shown in FIG. 2G, the semiconductor chip 1e is held by the dicing sheet 4 with the semiconductor device forming surface 1a facing upward.

(Embodiment 2)
FIG. 7 is a flowchart of the method for manufacturing a semiconductor chip according to the second embodiment of the present invention, and FIG. 8 is a process explanatory diagram of the method for manufacturing a semiconductor chip according to the second embodiment of the present invention. In the second embodiment, in the flow of the semiconductor chip manufacturing method shown in FIG. 1, in the defective mask removing step (ST7) performed by ashing by plasma processing, the back surface of the semiconductor wafer 1 is polished to form a defective mask. It is intended to be removed.

  7, (ST11) to (ST16) and (ST19) to (ST21) have the same contents as (ST1) to (ST6) and (ST8) to (ST10) shown in FIG. In the example shown here, it is determined to be unacceptable in (ST16), and defective mask removal by mechanical polishing is executed for a semiconductor wafer having a defective mask (ST17).

  That is, as shown in FIG. 8, the protective sheet 2 to which the semiconductor wafer 1 after the mask formation is attached is placed on the chuck table 25, and the mask 3 covering the upper surface of the semiconductor wafer 1 is mechanically moved by the polishing head 26. Removed. At this time, the semiconductor chip 1e is partially mechanically polished together with the mask 3, so that the work-affected layer formed on the mechanically polished surface 1f of the semiconductor wafer 1 is plasma etched or removed in the work-affected layer removal step (ST18). It is removed by a method such as chemical mechanical polishing. After that, the semiconductor wafer 1 from which the defective mask has been removed returns to (ST14), is subjected to mask formation again, and returns to the normal process thereafter.

  As described above, in the semiconductor chip manufacturing method of the present invention, in a step of performing dicing by plasma etching on a thin semiconductor wafer, a mask covering a region partitioned by street lines is formed on the semiconductor wafer. A mask inspection for detecting a defect of the mask is performed, and plasma dicing is executed only for a semiconductor wafer determined to be acceptable in the mask inspection.

  Various masks for photolithography in the manufacturing process of a semiconductor device are generally precision masks in which fine patterns on the order of 0.1 μm are formed at high density, so that possible mask defects are detected by inspection. Is practically impossible. For this reason, the idea of inspecting a mask for defect detection has never been used as a means for solving a practical problem.

  However, the mask used for plasma dicing is a simple pattern in which street lines for dividing a semiconductor wafer are simply formed on the order of several to several tens of micrometers. Easy. According to the present invention, in the process of solving the problem in plasma dicing in which a semiconductor wafer is divided by plasma processing, an effective inspection for detecting a mask defect by image recognition or three-dimensional measurement using a laser as described above is simplified. It was made on the basis of the result of the idea that it was feasible.

  By performing such mask inspection, problems caused by performing plasma dicing with a mask containing defects can be prevented, and reduction in processing yield due to reduction in bending strength can be prevented by an effective and simple method. can do.

  The method of manufacturing a semiconductor chip according to the present invention has an advantage that it is possible to prevent a decrease in processing yield due to a decrease in bending strength, and a semiconductor wafer formed with a plurality of semiconductor devices is divided into individual semiconductor devices. Thus, it is useful in the field of manufacturing semiconductor chips.

The flowchart of the manufacturing method of the semiconductor chip of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor chip of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor chip of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor chip of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor chip of Embodiment 1 of this invention Explanatory drawing of the mask defect in the manufacturing process of the semiconductor chip of Embodiment 1 of this invention Flowchart of semiconductor chip manufacturing method of Embodiment 2 of the present invention Process explanatory drawing of the manufacturing method of the semiconductor chip of Embodiment 2 of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1a Semiconductor device formation surface 1e Semiconductor chip 2 Protection sheet 3 Mask 3a Street line 10 Dry etching apparatus

Claims (9)

A semiconductor chip manufacturing method for manufacturing a semiconductor chip by dividing a semiconductor wafer in which a semiconductor device is formed in each of a plurality of regions partitioned by street lines into individual semiconductor devices,
A protective sheet attaching step for attaching a protective sheet to the semiconductor device forming surface side of the semiconductor wafer, a back surface polishing step for thinning the semiconductor wafer by polishing the back surface side of the semiconductor wafer attached with the protective sheet, and the back surface polishing step Thereafter, a mask forming step for forming a mask covering the plurality of regions on the back surface of the semiconductor wafer, a mask inspection step for inspecting a defect of the mask, and a semiconductor wafer determined to pass in the mask inspection step are targeted. Plasma dicing which divides this semiconductor wafer into a plurality of semiconductor chips for each individual semiconductor device by irradiating plasma from the surface where the mask is formed and removing a portion of the semiconductor wafer which is not covered with the mask A mask removing step of removing the mask after the plasma dicing step; The method of manufacturing a semiconductor chip, characterized in that it comprises a separation step of separating the semiconductor chip and the protective sheets.   2. The mask inspection step, wherein at least one defect is inspected among a pinhole of a mask opened on the semiconductor device formation surface, an edge shape of the mask, and a foreign substance located on the street line. Semiconductor chip manufacturing method.   The defective mask removing step for removing the mask is performed on a semiconductor wafer determined to be unacceptable in the mask inspection step, and then each step after the mask forming step is performed. 3. A method for producing a semiconductor chip according to 2.   4. The method of manufacturing a semiconductor chip according to claim 3, wherein, in the defective mask removing step, the mask is removed by ashing using plasma.   4. The method of manufacturing a semiconductor chip according to claim 3, wherein the defective mask is removed by polishing the back surface of the semiconductor wafer in the defective mask removing step.   4. The defect mask removal step, wherein after the defective mask is removed by polishing the back surface of the semiconductor wafer, the work-affected layer formed on the back surface of the semiconductor wafer is removed by this polishing. Semiconductor chip manufacturing method.   The process-affected layer removal step for removing the process-affected layer formed on the back surface of the semiconductor wafer by the back-side polishing step is performed before the mask formation step. Semiconductor chip manufacturing method.   8. The method of manufacturing a semiconductor chip according to claim 1, wherein the mask is removed by ashing using plasma in the mask removing step. 8. The mask removal step, wherein after removing the mask by polishing the back surface of the semiconductor wafer, the work-affected layer formed on the back surface of the semiconductor chip is removed by this polishing. A method for manufacturing a semiconductor chip according to claim 1.

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