CN202003139U - Soft-drying device - Google Patents
Soft-drying device Download PDFInfo
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- CN202003139U CN202003139U CN2011201051604U CN201120105160U CN202003139U CN 202003139 U CN202003139 U CN 202003139U CN 2011201051604 U CN2011201051604 U CN 2011201051604U CN 201120105160 U CN201120105160 U CN 201120105160U CN 202003139 U CN202003139 U CN 202003139U
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- soft baking
- gas
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- process chamber
- heater
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Abstract
The utility model provides a soft-drying device, which comprises a processing chamber and a soft-drying gas heater, wherein the processing chamber is provided with a gas inlet; and the soft-drying gas heater is positioned at the outer part of the processing chamber and provided with a gas outlet, and the gas outlet is connected with the gas inlet of the processing chamber and used for outputting drying gas of which the temperature is higher than a normal temperature. Since the soft-drying gas heater is added to the soft-drying device provided by the utility model, a gas-discharging environment of which the temperature is higher than the normal temperature is provided for a softly-dried wafer in the processing chamber, so that volatile components generated by a photosensitive resist (PR) or a bottom antireflective coating (BARC) or other spin-coating materials containing organic solvents are easily discharged when the wafer is softly dried and are not easily fixed and condensed on the inner surface at the top of the processing chamber or a gas-discharging opening of the processing chamber, and therefore the spherical defect is improved, the performance of the photosensitive resist is improved, the maintenance frequency of the soft-drying device is reduced, and the process efficiency is improved.
Description
Technical field
The utility model relates to the lithographic equipment field, and is particularly related to a kind of soft baking device.
Background technology
In the semiconductor manufacturing, photoetching process generally will experience silicon chip surface cleaning, drying, linging, spin coating photoresist, soft baking, aim at operations such as exposure, back baking, development, hard baking, etching, detection.Wherein soft baking step can be removed the most of organic solvent composition in the photoresist, strengthens adhesion, discharges the stress in the photoresist film, improves the photoresist homogeneity.
Figure 1 shows that the soft baking apparatus structure synoptic diagram of prior art, have in the process chamber 100 that wafer imports and exports and be mounted with a heating plate 101, scribble photoresist (PR) or bottom anti-reflection layer (BARC) or other wafer 102 that contains the spin-on material of organic solvent and be placed on heating plate 101 and carry out soft baking, the spin-on material that photoresist (PR) or bottom anti-reflection layer (BARC) or other contain organic solvent can produce volatile constituent 105 behind heated baking.Under the prior art, can in process chamber 100, feed room temperature (the being about 22 ℃) gas 103 of the drying of certain flow rate usually, as N
2Or dry air, volatile constituent 105 is drained by exhausr port 104, the remote temperature that is lower than volatile constituent 105 of temperature of dry room temperature (being about 22 ℃) gas 103, cause volatile constituent 105 easily to condense to anchor at process chamber 100 top inner surface or exhausr port 104 easily and contaminated equipment, and the organic solvent of the set of condensing may drop onto on the wafer 102, cause the photoresist of wafer 102 ball defects to occur, influence the semiconductor devices process rate, and improve this phenomenon by increasing the plant maintenance frequency, process time can be prolonged, reduce service life of equipment, increase manufacturing cost.
The utility model content
The utility model proposes a kind of soft baking device,, improve photoresist and the ball defects phenomenon occurs, reduce equipment pollution, improve the photoresist homogeneity to reduce the set of photoresist organic solvent.
In order to achieve the above object, the utility model proposes a kind of soft baking device, comprising:
Process chamber is provided with air intake;
Soft baking gas heater is positioned at described process chamber outside, and is provided with the gas outlet, and described gas outlet connects the air intake of described process chamber, and output is higher than the dry gas of normal temperature.
Further, the top of described process chamber is a lid, and described lid central authorities are provided with one or more exhausr ports.
Further, described lid is up-narrow and down-wide structure.
Further, described process chamber has a plurality of described air intakes, be located at lid central authorities exhausr port around.
Further, the gas outlet of described soft baking gas heater connects each described air intake of described process chamber.
Further, the sidewall of described process chamber is provided with the wafer import and export.
Further, described soft baking gas heater comprises, radiation heater, fuel heater, water heater or semiconductor heating module one or more.
Further, described soft baking gas heater also comprises air intake opening.
Further, described soft baking device also comprises heating plate, and described heating plate is installed in the described process chamber.
Further, described heating plate is furnished with well heater.
Compared with prior art, the soft baking device that the utility model proposes, increase a soft baking gas heater, for carry out the wafer of soft baking at process chamber, the exhaust environment that is higher than normal temperature is provided, make the volatile constituent that photoresist (PR) or bottom anti-reflection layer (BARC) or other contain spin-on material generation when the soft baking of wafer of organic solvent be easy to discharge, be not easy set and condense in process chamber top inner surface or its exhaust ports, improved ball defects, improved the performance of photoresist, reduce the frequency of maintenance of soft baking device, improved process efficiency.
Description of drawings
Figure 1 shows that the soft baking apparatus structure synoptic diagram of prior art;
Figure 2 shows that the soft baking apparatus structure of the utility model specific embodiment synoptic diagram.
Embodiment
In order more to understand technology contents of the present utility model, especially exemplified by specific embodiment and cooperate appended illustrate as follows.
Please refer to Fig. 2, Figure 2 shows that the soft baking apparatus structure of the utility model specific embodiment synoptic diagram.The utility model proposes a kind of soft baking device, comprising: process chamber 200, heating plate 201 and soft baking gas heater 206.
In the present embodiment, process chamber 200 tops are lid 200a, and sidewall is provided with wafer and imports and exports 207a, 207b, and lid 200a is the up-narrow and down-wide funnel-shaped structure that falls, and lid 200a central authorities are provided with exhausr port 204, are provided with a plurality of air intake 203a, 203b on every side; Heating plate 201 is installed in the described process chamber 200, and is furnished with well heater (not shown); Soft baking gas heater 206, be positioned at process chamber 200 outsides, and be provided with air intake opening 206a and gas outlet 206b, gas outlet 206b connects each air intake 203a, 203b of described process chamber 200, soft baking gas heater 206 comprises electric heater or semiconductor heating module, in order to realize the heating of input gas.
In the lithographic process, after wafer 202 resist coatings (PR) or bottom anti-reflection layer (BARC) or other contain the spin-on material of organic solvent, deliver to by wafer import 207a and to carry out soft baking on the heating plate 201, simultaneously, in the air intake opening 206a of soft baking gas heater 206, feed nitrogen or air, these nitrogen or air are exported from gas outlet 206b after soft baking gas heater 206 heating, the nitrogen of the drying of output or the temperature of air are 50～150 ℃, perhaps hang down 20～100 ℃ than the soft baking temperature of heating plate.Preferably, hang down 50 ℃ than the soft baking temperature of heating plate, output gas flow of gas is 0.1～20L/min.Then, be sent to the process chamber 200 from the nitrogen of the drying of gas outlet 206b output or air intake 203a, the 203b of the treated chamber 200 of air, the volatile constituent 205 that photoresist (PR) or bottom anti-reflection layer (BARC) or other spin-on material that contains organic solvent produced when nitrogen that this is dry or air can be with wafer 102 soft bakings is drained from the exhausr port 204 of process chamber 200.
In sum, the soft baking device that the utility model proposes, increase a soft baking gas heater, for carry out the wafer of soft baking at process chamber, the exhaust environment that is higher than normal temperature is provided, make the volatile constituent that photoresist (PR) or bottom anti-reflection layer (BARC) or other contain spin-on material generation when the soft baking of wafer of organic solvent be easy to discharge, be not easy set and condense in process chamber top inner surface or its exhaust ports, improved ball defects, improved the performance of photoresist, reduce the frequency of maintenance of soft baking device, improved process efficiency.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (10)
1. a soft baking device is characterized in that, comprising:
Process chamber is provided with air intake;
Soft baking gas heater is positioned at described process chamber outside, and is provided with the gas outlet, and described gas outlet connects the air intake of described process chamber, and output is higher than the dry gas of normal temperature.
2. soft baking device as claimed in claim 1 is characterized in that the top of described process chamber is a lid,, described lid central authorities are provided with one or more exhausr ports.
3. soft baking device as claimed in claim 2 is characterized in that described lid is up-narrow and down-wide structure.
4. soft baking device as claimed in claim 2 is characterized in that described process chamber has one or more described air intakes, be located at lid central authorities exhausr port around.
5. soft baking device as claimed in claim 4 is characterized in that, the gas outlet of described soft baking gas heater connects each described air intake of described process chamber.
6. soft baking device as claimed in claim 1 is characterized in that, the sidewall of described process chamber is provided with wafer and imports and exports.
7. soft baking device as claimed in claim 1 is characterized in that, described soft baking gas heater comprises electric heater, radiation heater, fuel heater, water heater or semiconductor heating module one or more.
8. soft baking device as claimed in claim 1 is characterized in that, described soft baking gas heater also comprises air intake opening.
9. soft baking device as claimed in claim 1 is characterized in that, described soft baking device also comprises heating plate, and described heating plate is installed in the described process chamber.
10. soft baking device as claimed in claim 9 is characterized in that described heating plate is furnished with well heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201051604U CN202003139U (en) | 2011-04-12 | 2011-04-12 | Soft-drying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201051604U CN202003139U (en) | 2011-04-12 | 2011-04-12 | Soft-drying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202003139U true CN202003139U (en) | 2011-10-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201051604U Expired - Fee Related CN202003139U (en) | 2011-04-12 | 2011-04-12 | Soft-drying device |
Country Status (1)
| Country | Link |
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| CN (1) | CN202003139U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013174107A1 (en) * | 2012-05-21 | 2013-11-28 | 京东方科技集团股份有限公司 | Prebaking device and exhaust method thereof |
| CN103578928A (en) * | 2013-10-21 | 2014-02-12 | 上海和辉光电有限公司 | Substrate drying method, substrate manufacturing method, and low-temperature heating drying device thereof |
| CN103576466A (en) * | 2012-07-24 | 2014-02-12 | 无锡华润上华半导体有限公司 | Photoetching method |
| CN105842992A (en) * | 2016-05-16 | 2016-08-10 | 上海华力微电子有限公司 | Novel litho track softbake system |
| CN105895524A (en) * | 2016-05-17 | 2016-08-24 | 成都京东方光电科技有限公司 | Hot plate heating apparatus and control method |
| CN107102516A (en) * | 2017-03-24 | 2017-08-29 | 惠科股份有限公司 | Substrate manufacturing process, substrate, display panel and display device |
| CN108981374A (en) * | 2018-08-10 | 2018-12-11 | 德淮半导体有限公司 | wafer dryer |
| CN111346478A (en) * | 2018-12-21 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Exhaust module, wafer processing system and method for exhausting waste gas |
-
2011
- 2011-04-12 CN CN2011201051604U patent/CN202003139U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013174107A1 (en) * | 2012-05-21 | 2013-11-28 | 京东方科技集团股份有限公司 | Prebaking device and exhaust method thereof |
| US9234702B2 (en) | 2012-05-21 | 2016-01-12 | Boe Technology Group Co., Ltd. | Prebake equipment and air discharge method thereof |
| CN103576466A (en) * | 2012-07-24 | 2014-02-12 | 无锡华润上华半导体有限公司 | Photoetching method |
| CN103578928A (en) * | 2013-10-21 | 2014-02-12 | 上海和辉光电有限公司 | Substrate drying method, substrate manufacturing method, and low-temperature heating drying device thereof |
| CN105842992A (en) * | 2016-05-16 | 2016-08-10 | 上海华力微电子有限公司 | Novel litho track softbake system |
| CN105895524A (en) * | 2016-05-17 | 2016-08-24 | 成都京东方光电科技有限公司 | Hot plate heating apparatus and control method |
| CN105895524B (en) * | 2016-05-17 | 2018-06-05 | 成都京东方光电科技有限公司 | A kind of hot plate heating unit and control method |
| CN107102516A (en) * | 2017-03-24 | 2017-08-29 | 惠科股份有限公司 | Substrate manufacturing process, substrate, display panel and display device |
| CN108981374A (en) * | 2018-08-10 | 2018-12-11 | 德淮半导体有限公司 | wafer dryer |
| CN111346478A (en) * | 2018-12-21 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Exhaust module, wafer processing system and method for exhausting waste gas |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130506 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130506 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111005 Termination date: 20180412 |