CN102522358A - Photoresist stripping technical cavity and photoresist stripping method for semiconductor silicon wafer - Google Patents
Photoresist stripping technical cavity and photoresist stripping method for semiconductor silicon wafer Download PDFInfo
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- CN102522358A CN102522358A CN2011104579772A CN201110457977A CN102522358A CN 102522358 A CN102522358 A CN 102522358A CN 2011104579772 A CN2011104579772 A CN 2011104579772A CN 201110457977 A CN201110457977 A CN 201110457977A CN 102522358 A CN102522358 A CN 102522358A
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Abstract
The invention provides a photoresist stripping technical cavity for a semiconductor silicon wafer, which adopts the structure that a bottom platform bearing a silicon wafer is arranged at one end of the interior of the technical cavity; a plurality of lifting columns are uniformly distributed around the bottom platform; flexible elements are arranged at the top parts of the lifting columns; a protective shield is fixed on the other end of the interior of the technical cavity and is internally provided with a plasma generating device; a rotary platform and a movable cover plate are also arranged in the technical cavity; the silicon wafer is fixed above the rotary platform which can move up and down; the rotary platform and the protective shield can form a closed structure; the moveable cover plate can be placed above the bottom platform for shielding the wafer; and one or a plurality of inlet(s) is (are) formed on the moveable cover plate. The invention also provides a photoresist stripping method for the semiconductor silicon wafer. According to the photoresist stripping technical cavity and the photoresist stripping method, two silicon wafers can be subjected to dry etching and wet etching at the same time, thereby greatly improving the production efficiency.
Description
Technical field
The present invention relates to the integrated circuit processing technique field, be specifically related to a kind of the remove photoresist process cavity and method of removing photoresist of semi-conductor silicon chip.
Background technology
Follow the continuous progress of integrated circuit fabrication process, it is more and more littler that the volume of semiconductor device is just becoming, and this has also caused very small particle also to become and has been enough to influence the manufacturing and the performance of semiconductor device, so it is more and more important that the silicon chip cleaning also becomes.
In all cleaning steps; Because injection or etching technics make the photoresist surface form the duricrust that one deck is carbonized; Be difficult to remove through the wet-cleaned mode of routine, the photoresist lift off of therefore removing after etching or heavy dose of ion inject is a most difficult step.Method commonly used is to use oxygen plasma that photoresist is handled earlier, re-uses wet clean process and removes residual photoresist.For 130 nanometers and above technology band; Dry method remove photoresist and wet-cleaned between the time interval all can be controlled within one day usually; But along with development of technology, increasing new material is used for the formation of the interconnected technology medium of copper layer, compares with original material silicon dioxide; These new materials have better electric property, but also the cleaning technique that removes photoresist have been brought bigger challenge simultaneously.For 22/32 nanometer technology band, dry method is removed photoresist and must remain in the very short time blanking time of wet-cleaned.Therefore, dry method removed photoresist to be integrated on same the main frame with wet-cleaned, can be shortened in a few minutes the blanking time of two step process.
At present, dry method removed photoresist to be integrated in the same process cavity with wet-cleaned, can be further shortening to a second level blanking time of two step process; But to a silicon chip, after finishing dry method and removing photoresist, carry out wet-cleaned again, when carrying out wet clean process; The dry method process unit that removes photoresist is idle; And carrying out dry method when removing photoresist technology, wet clean process is idle, unfavorable explained hereafter efficient.
Summary of the invention
The objective of the invention is to propose a kind of semi-conductor silicon chip remove photoresist process cavity with remove photoresist method, to solve in same process cavity the problem that dry method is removed photoresist and effectively is used in combination with wet-cleaned.
To achieve these goals, the present invention provides a kind of process cavity of removing photoresist of semi-conductor silicon chip, and the inner end of said process cavity has the bottom platform of carrying silicon chip; Even a plurality of lifting columns that distribute around the said bottom platform, said lifting column top is provided with telescopic element, and the inner other end of said process cavity is fixed with a guard shield; Has plasma producing apparatus in the said guard shield; Said process cavity inside also has rotation platform and removable cover, and said rotation platform top is used for fixing said silicon chip, and said rotation platform can move up and down; Said rotation platform and said guard shield can constitute enclosed construction; Said removable cover can place the top of said bottom platform, and can block said silicon chip, has one or more imports on the said removable cover.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, the quantity of said lifting column is two.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, said telescopic element is telescopic silicon chip support.
Preferably; In the process cavity of removing photoresist of said semi-conductor silicon chip; Said plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil; Said coil is provided with around said guard shield madial wall, and said air inlet pipeline, vacuum line and exhaust pipe pass the sidewall setting of said guard shield.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, said guard shield is a metal skirt.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, the diameter of said bottom platform and said rotation platform is identical.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, when said removable cover is positioned at said silicon chip top, has 0.5 millimeter between said removable cover and the silicon chip to 3 mm distance.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, said import comprises liquid-inlet, and said liquid-inlet is connected with liquid line, and the pressure of the cleaning fluid through said liquid-inlet is 5 to 50 pounds/square inch.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, said removable cover also has one or more gas feeds, and said gas feed is connected with gas piping.
Preferably, in the process cavity of removing photoresist of said semi-conductor silicon chip, the edge downwarping of said removable cover forms the water conservancy diversion guard shield.
The present invention also provides a kind of method of removing photoresist of the process cavity of removing photoresist of semi-conductor silicon chip, and this method of removing photoresist comprises: silicon chip is fixed on the said rotation platform rotation platform back-out; Said rotation platform rises and the interior guard shield of process cavity forms enclosed construction; Start the plasma producing apparatus in the said guard shield, in said enclosed construction, said silicon chip is carried out plasma ashing technology; After accomplishing said plasma ashing technology, said rotation platform descends, and said a plurality of lifting columns are risen to and the same horizontal level of said rotation platform, and the telescopic element of said lifting column stretches out fixing said silicon chip; Said rotation platform precession, said lifting column descends, said silicon chip is placed into said bottom platform after said telescopic element regain, said lifting column further drops to the below that is positioned at said bottom platform; Removable cover in the process cavity is moved to the top of said bottom platform; Cleaning fluid flows on the said silicon chip through the import on the said removable cover; Said silicon chip is carried out wet-cleaned; When said silicon chip is carried out wet-cleaned, rotation platform screwed out once more the another one silicon chip is fixed on the said rotation platform, repeat above-mentioned steps.
Preferably, in the method for removing photoresist of said semi-conductor silicon chip, said silicon chip is fixed on the said rotation platform through the exterior mechanical arm.
Preferably, in the method for removing photoresist of said semi-conductor silicon chip, said rotation platform can move up and down, and when said rotation platform moved up, the guard shield in said rotation platform and the process cavity formed enclosed construction.
Preferably; In the method for removing photoresist of said semi-conductor silicon chip; Said plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil, through said air inlet pipeline and said vacuum line the pressure limit in the said enclosed construction is adjusted to 10 millitorrs-2000 millitorr, aerating oxygen in said enclosed construction; And be at least the signal of 13.56 megahertzes to said coil incoming frequency, excite oxygen plasma that said silicon chip is carried out the oxygen plasma cineration technics.
Preferably, in the method for removing photoresist of said semi-conductor silicon chip, said removable cover also has one or more gas feeds, and said gas feed is connected with gas piping, IPA vapor or nitrogen is sprayed onto the surface of said silicon chip through said gas piping.
Preferably, in the method for removing photoresist of said semi-conductor silicon chip, the removable cover in the process cavity is moved to the top of said bottom platform, make between said removable cover and the said silicon chip to have 0.5 millimeter to 3 mm distance.
Compared with prior art; The process cavity of removing photoresist of semi-conductor silicon chip provided by the invention; Through being arranged on the lifting column in the process cavity; The silicon chip that will finish plasma ashing technology is transported to bottom platform from said enclosed construction and carries out wet-cleaned, when said silicon chip is carried out cleaning, can in enclosed construction, carry out plasma ashing technology to another silicon chip; Make two silicon chips carry out dry process and wet processing simultaneously, greatly improved explained hereafter efficient.
The method of removing photoresist of semi-conductor silicon chip provided by the invention; Lifting column rises and uses fixedly silicon chip of its telescopic element; Make the silicon chip of accomplishing plasma ashing technology along with lifting column descends; Carry out wet-cleaned to bottom platform, and when silicon chip carried out wet-cleaned, the enclosed construction that carries out plasma ashing technology got into another silicon chip and carries out dry process; The enclosed construction that carries out dry process can be accessed simultaneously with the state space that carries out wet-cleaned utilize, help to improve explained hereafter efficient.
Description of drawings
Shown in Figure 1 is the process cavity structural profile sketch map that removes photoresist of the semi-conductor silicon chip of preferred embodiment of the present invention;
Shown in Figure 2 is the process cavity plan structure generalized section of removing photoresist of the semi-conductor silicon chip of preferred embodiment of the present invention;
The flow chart of steps of the method for removing photoresist of the semi-conductor silicon chip for preferred embodiment of the present invention shown in Figure 3;
Shown in Figure 4 for the process cavity structural profile sketch map of semi-conductor silicon chip when carrying out plasma ashing technology of preferred embodiment of the present invention;
Shown in Figure 5ly be the process cavity structural profile sketch map of preferred embodiment of the present invention when carrying out plasma ashing technology and wet clean process simultaneously.
Embodiment
Remove photoresist process cavity and the method for removing photoresist of the semi-conductor silicon chip that the present invention is proposed below in conjunction with accompanying drawing and specific embodiment are done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Please refer to Fig. 1, Fig. 2, shown in Figure 1 is the process cavity structural profile sketch map that removes photoresist of the semi-conductor silicon chip of preferred embodiment of the present invention; Shown in Figure 2 is the process cavity plan structure generalized section of removing photoresist of the semi-conductor silicon chip of preferred embodiment of the present invention.The present invention provides a kind of process cavity of removing photoresist of semi-conductor silicon chip, and said process cavity 10 inner ends have the bottom platform 12 of carrying silicon chip 14, and a plurality of lifting columns 11 evenly distribute around the said bottom platform 12; Said lifting column 11 tops are provided with telescopic element 11a; The said process cavity 10 inner other ends are fixed with a guard shield 13, have plasma producing apparatus in the said guard shield 13, and said process cavity 10 inside also have rotation platform 16 and removable cover 15; Said rotation platform 16 tops are used for fixing said silicon chip 14; Said rotation platform 16 can move up and down, and said rotation platform 16 can constitute enclosed construction with said guard shield 13, and said removable cover 15 can place the top of said bottom platform 12; And can block said silicon chip 14, have one or more imports on the said removable cover 15.
In the present embodiment; The quantity of lifting column 11 is two; Telescopic element 11a is telescopic silicon chip support, will be understood by those skilled in the art that the quantity of said lifting column 11 not only is merely two, also can be other quantity; Telescopic element 11a also not only is merely telescopic silicon chip support, can also be other media that can be used for fixing silicon chip 14.
In the present embodiment; Said plasma producing apparatus comprises air inlet pipeline 171, vacuum line 172, exhaust pipe 173 and coil 174; Said coil 174 is around said guard shield 13 madial wall settings, the sidewall setting that said air inlet pipeline 171, vacuum line 172 and exhaust pipe 173 pass said guard shield 13.Will be understood by those skilled in the art that said plasma producing apparatus not only is made up of said elements, can also form by other element that can produce plasma.Further, said guard shield 13 is a metal skirt.
Further, when said removable cover 15 is positioned at said silicon chip 14 tops, has 0.5 millimeter to 3 mm distance between said removable cover 15 and the silicon chip 14.In the present embodiment, the spacing between silicon chip 14 surfaces and the removable cover 15 is 2 millimeters.The minimum distance that is had between said removable cover 15 and the silicon chip 14; Make that silicon chip 14 surfaces all are closed in the minimum space in whole cleaning process; Prevent that effectively the suspended particulate and the globule in the process cavity be infected with silicon chip 14 surfaces once more, can also effectively reduce cleaning fluid consumption simultaneously.Said import is a liquid-inlet, and said liquid-inlet is connected with liquid line 18a, and the pressure of the cleaning fluid through said liquid-inlet is 5 to 50 pounds/square inch.In the present embodiment, the force value of cleaning fluid is 50 pounds/square inch.Liquid line 18a provide cleaning fluid; Make cleaning fluid be sprayed onto silicon chip to be cleaned 14 surfaces, regulate pressure, can make cleaning fluid form very high speed on silicon chip 14 surfaces through the cleaning fluid of liquid-inlet through said liquid-inlet; Thereby reduce boundary layer thickness, improve cleaning performance.
In the present embodiment; Said removable cover 15 also has one or more gas feeds; Said gas feed is connected with gas piping 18b; Gas piping 18b provides high pure nitrogen or IPA vapor, it is sprayed onto through gas feed cleans silicon chip 14 surfaces that finish, and high pure nitrogen that provides or IPA vapor can help silicon chip 14 rapid draings.
In the present embodiment, said bottom platform 12 is identical with the diameter of said rotation platform 16, so that bottom platform 12 all can be placed same silicon chip 14 with rotation platform 16.
Preferably, said bottom platform 12 is provided with silicon chip support (not shown) with said rotation platform 16 and is used for fixing said silicon chip 14.The inside of said silicon chip support is distributed with vacuum line, and said vacuum line can provide vacuum environment, utilizes the fixedly silicon chip 14 on the silicon chip support of absorption affinity that vacuum produces, and the method for this fixedly silicon chip is neither damaged silicon chip 14, does not take up room again.
Preferably; Said removable cover 15 is provided with ultrasonic oscillator; The quantity of said ultrasonic oscillator is one to four, and in the present embodiment, corresponding silicon chip 14 is provided with two ultrasonic oscillators; The power of each ultrasonic oscillator is for arriving 0.5 to 5 watt every square centimeter on silicon chip 14 surfaces, and operating frequency is 0.2 to 3 megahertz.Will be understood by those skilled in the art that, not only be confined to be provided with ultrasonic oscillator in the said process cavity, can also be that other can produce hyperacoustic instrument.
Further, the edge downwarping of said removable cover 15 forms water conservancy diversion guard shield 19, avoids cleaning fluid to spill the edge of removable cover 15, can utilize cleaning fluid more expeditiously.The exhaust outlet pipeline (not shown) of said process cavity is arranged on the below of said bottom platform 12.
Particularly, process cavity 10 comprises the import 101 of process cavity and the outlet 102 of process cavity, and silicon chip 14 is sent in the process cavity 10 through the import 101 of process cavity, sees process cavity 10 off through the outlet 102 of process cavity.
The flow chart of steps of the method for removing photoresist of the semi-conductor silicon chip for preferred embodiment of the present invention shown in Figure 3.With reference to Fig. 3, the method for removing photoresist of the semi-conductor silicon chip that the embodiment of the invention provides comprises:
S31, rotation platform screwed out silicon chip is fixed on the said rotation platform;
S32, said rotation platform rise and the interior guard shield of process cavity forms enclosed construction;
Plasma producing apparatus in S33, the said guard shield of startup carries out plasma ashing technology to said silicon chip in said enclosed construction;
After S34, the said plasma ashing technology of completion, said rotation platform descends, and said a plurality of lifting columns are risen to and the same horizontal level of said rotation platform, and the telescopic element of said lifting column stretches out fixing said silicon chip;
S35, said rotation platform precession, said lifting column descends, said silicon chip is placed into said bottom platform after said telescopic element regain, said lifting column further drops to the below that is positioned at said bottom platform;
S36, the removable cover in the process cavity moved to the top of said bottom platform;
S37, cleaning fluid flow on the said silicon chip through the import on the said removable cover; Said silicon chip is carried out wet-cleaned; When said silicon chip is carried out wet-cleaned, rotation platform screwed out once more the another one silicon chip is fixed on the said rotation platform, repeat above-mentioned steps.
Shown in Figure 4 for the process cavity structural profile sketch map of semi-conductor silicon chip when carrying out plasma ashing technology of preferred embodiment of the present invention.With reference to Fig. 4; Silicon chip 14 is at first carried out plasma ashing technology, and what carry out in the present embodiment is the oxygen plasma cineration technics, particularly; Rotation platform 16 is screwed out; In the present embodiment, said rotation platform 16 screws out 90 ° along vertical plane, until said rotation platform 16 be horizontal and be positioned at metal skirt under; It should be understood by one skilled in the art that said rotation platform 16 not only screws out along vertical plane, can also screw out to metal skirt along horizontal plane according to the set-up mode of rotation platform 16.Through the exterior mechanical arm import 101 of said silicon chip 14 through process cavity 10 is placed on the said rotation platform 16, and said silicon chip 14 is fixed on the said rotation platform 16 in the process cavity 10 through the vacuum line of the silicon chip support of setting on the rotation platform 16.Rotation platform 16 can move up and down; Rotation platform 16 risen to metal skirt form an enclosed construction; And silicon chip 14 promptly is in the closed space of enclosed construction, afterwards, with said vacuum line 172 pressure limit in the said enclosed construction is adjusted to 10 millitorrs-2000 millitorr through said air inlet pipeline 171; Aerating oxygen in said enclosed construction; And be at least the signal of 13.56 megahertzes to said coil 174 incoming frequencies, and this frequency signal excites oxygen plasma that said silicon chip 14 is carried out the oxygen plasma cineration technics, and the waste gas that under these process conditions, produces is discharged enclosed constructions through exhaust pipe 173.
After accomplishing said plasma ashing technology; Said rotation platform 16 descends, and said a plurality of lifting columns 11 are risen to and said rotation platform 16 same horizontal levels, and the telescopic element 11a of said lifting column 11 stretches out fixing said silicon chip 14; After silicon chip 14 is finished the oxygen plasma cineration technics; Silicon chip 14 is carried out wet-cleaned, said rotation platform 16 precessions, said lifting column 11 descends; Said silicon chip 14 is placed into the said bottom platform said telescopic element 11a in 12 backs regains, said lifting column 11 further drops to the below that is positioned at said bottom platform.Shown in Figure 5ly be the process cavity structural profile sketch map of preferred embodiment of the present invention when carrying out plasma ashing technology and wet clean process simultaneously.With reference to Fig. 5, the removable cover in the process cavity 15 is moved to the top of said bottom platform 12, the diameter of said bottom platform 12 is 10 inches to 15 inches; The diameter of bottom platform 12 is identical with the diameter of rotation platform 16, and the diameter of the metal skirt corresponding with said rotation platform 16 also is 10 inches to 15 inches, and the material of said removable cover 15 is a pottery; Diameter is 10 to 15 inches, and thickness is 1 to 20 millimeter, in the present embodiment; The diameter of said bottom platform 12 is 10 inches; And the diameter of removable cover 15 is 12 inches, will be understood by those skilled in the art that, the material of said removable cover 15 not only is limited as pottery; Can also be other stable chemical performance, meet the material of certain requirement of mechanical strength.
When the process cavity of removing photoresist of the semi-conductor silicon chip that utilizes embodiments of the invention to provide is cleaned; Make between silicon chip 14 surfaces and the removable cover 15 and keep 2 millimeters spacing; Bottom platform 12 drives silicon chip 14 and begins rotation; Its maximum speed is 500 to 3000 rpms, and high rotational speed helps to make cleaning fluid to form very high speed on silicon chip 14 surfaces.In the present embodiment, the rotating speed of bottom platform 12 is 2000 rpms.Cleaning fluid is sprayed onto silicon chip 14 surfaces with 50 pounds/square inch pressure through the liquid-inlet on the removable cover 15; Before startup bottom platform 12 is rotated; Open ultrasonic oscillator, make the ultrasonic wave silicon chip of its generation assist cleaning, and then improve process efficiency; Cleaning fluid stops the cleaning fluid supply after cleaning and finishing, and changes pure water rinsing into.After cleaning completion; Stop to spray pure water; Close ultrasonic oscillator simultaneously; Gas piping 18b provides high pure nitrogen or IPA vapor, it is sprayed onto through gas feed cleans silicon chip 14 surfaces that finish, and high pure nitrogen that provides or IPA vapor can help silicon chip 14 rapid draings.After silicon chip 14 dry the completion, bottom platform 12 stops operating and falls, and the exterior mechanical arm takes out silicon chip 14 through the outlet 102 of process cavity 10.When above-mentioned silicon chip 14 is carried out wet-cleaned, rotation platform 16 is screwed out once more, another silicon chip 14 ' is fixed on the said rotation platform 16 carries out plasma ashing technology; Like this; Have two silicon chips to carry out dry process and wet processing simultaneously, after the silicon chip 14 of accomplishing wet processing was removed outside the process cavity 10, another silicon chip 14 ' dry process was accomplished; Get into just emptied wet clean process space of coming out; So constantly cycling makes the enclosed construction that carries out dry process can access simultaneously with the state space that carries out wet-cleaned and utilizes, and helps to improve explained hereafter efficient
In sum; The remove photoresist process cavity and the method for removing photoresist of semi-conductor silicon chip provided by the invention; Through being arranged on the lifting column in the process cavity; The silicon chip that will finish plasma ashing technology is transported to bottom platform from said enclosed construction and carries out wet-cleaned, when said silicon chip is carried out cleaning, can in enclosed construction, carry out plasma ashing technology to another silicon chip; Make two silicon chips carry out dry process and wet processing simultaneously, greatly improved explained hereafter efficient.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (16)
1. the process cavity of removing photoresist of a semi-conductor silicon chip is characterized in that, the inner end of said process cavity has the bottom platform of carrying silicon chip; Even a plurality of lifting columns that distribute around the said bottom platform, said lifting column top is provided with telescopic element, and the inner other end of said process cavity is fixed with a guard shield; Has plasma producing apparatus in the said guard shield; Said process cavity inside also has rotation platform and removable cover, and said rotation platform top is used for fixing said silicon chip, and said rotation platform can move up and down; Said rotation platform and said guard shield can constitute enclosed construction; Said removable cover can place the top of said bottom platform, and can block said silicon chip, has one or more imports on the said removable cover.
2. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1 is characterized in that, the quantity of said lifting column is two.
3. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1 is characterized in that, said telescopic element is telescopic silicon chip support.
4. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1; It is characterized in that; Said plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil; Said coil is provided with around said guard shield madial wall, and said air inlet pipeline, vacuum line and exhaust pipe pass the sidewall setting of said guard shield.
5. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1 is characterized in that, said guard shield is a metal skirt.
6. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1 is characterized in that, the diameter of said bottom platform and said rotation platform is identical.
7. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1 is characterized in that, when said removable cover is positioned at said silicon chip top, has 0.5 millimeter between said removable cover and the silicon chip to 3 mm distance.
8. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 1 is characterized in that, said import comprises liquid-inlet, and said liquid-inlet is connected with liquid line, and the pressure of the cleaning fluid through said liquid-inlet is 5 to 50 pounds/square inch.
9. the process cavity of removing photoresist of semi-conductor silicon chip according to claim 8 is characterized in that, said removable cover also has one or more gas feeds, and said gas feed is connected with gas piping.
10. according to the process cavity of removing photoresist of each said semi-conductor silicon chip in the claim 1 to 9, it is characterized in that the edge downwarping of said removable cover forms the water conservancy diversion guard shield.
11. the method for removing photoresist of utilizing the process cavity of removing photoresist of the described semi-conductor silicon chip of claim 1 is characterized in that, comprising:
Silicon chip is fixed on the said rotation platform rotation platform back-out;
Said rotation platform rises and the interior guard shield of process cavity forms enclosed construction;
Start the plasma producing apparatus in the said guard shield, in said enclosed construction, said silicon chip is carried out plasma ashing technology;
After accomplishing said plasma ashing technology, said rotation platform descends, and said a plurality of lifting columns are risen to and the same horizontal level of said rotation platform, and the telescopic element of said lifting column stretches out fixing said silicon chip;
Said rotation platform precession, said lifting column descends, said silicon chip is placed into said bottom platform after said telescopic element regain, said lifting column further drops to the below that is positioned at said bottom platform;
Removable cover in the process cavity is moved to the top of said bottom platform;
Cleaning fluid flows on the said silicon chip through the import on the said removable cover; Said silicon chip is carried out wet-cleaned; When said silicon chip is carried out wet-cleaned, rotation platform screwed out once more the another one silicon chip is fixed on the said rotation platform, repeat above-mentioned steps.
12. one kind is utilized the described method of removing photoresist of claim 11, it is characterized in that, through the exterior mechanical arm said silicon chip is fixed on the said rotation platform.
13. one kind is utilized the described method of removing photoresist of claim 11, it is characterized in that said rotation platform can move up and down, when said rotation platform moved up, the guard shield in said rotation platform and the process cavity formed enclosed construction.
14. one kind is utilized the described method of removing photoresist of claim 11; It is characterized in that; Said plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil; Through said air inlet pipeline and said vacuum line the pressure limit in the said enclosed construction is adjusted to 10 millitorrs-2000 millitorr; Aerating oxygen in said enclosed construction, and be at least the signal of 13.56 megahertzes to said coil incoming frequency, excite oxygen plasma that said silicon chip is carried out the oxygen plasma cineration technics.
15. one kind is utilized the described method of removing photoresist of claim 11; It is characterized in that; Said removable cover also has one or more gas feeds, and said gas feed is connected with gas piping, IPA vapor or nitrogen is sprayed onto the surface of said silicon chip through said gas piping.
16. one kind is utilized the described method of removing photoresist of claim 11, it is characterized in that, the removable cover in the process cavity is moved to the top of said bottom platform, makes between said removable cover and the said silicon chip to have 0.5 millimeter to 3 mm distance.
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| CN109560028A (en) * | 2017-09-26 | 2019-04-02 | 天津环鑫科技发展有限公司 | Round silicon wafer loading device |
| CN108580445A (en) * | 2018-06-29 | 2018-09-28 | 东莞塔菲尔新能源科技有限公司 | A kind of cleaning device and cleaning method of power battery head cover |
| CN115167288A (en) * | 2022-09-08 | 2022-10-11 | 深圳市世宗自动化设备有限公司 | Pressure self-adaptive glue scraping method and system |
| CN115167288B (en) * | 2022-09-08 | 2022-12-20 | 深圳市世宗自动化设备有限公司 | Pressure self-adaptive glue scraping method and system |
| CN116251803A (en) * | 2023-04-12 | 2023-06-13 | 东莞市晟鼎精密仪器有限公司 | Graphite boat cleaning equipment for cleaning silicon nitride coating based on microwave plasma dry method |
| CN116251803B (en) * | 2023-04-12 | 2023-09-22 | 东莞市晟鼎精密仪器有限公司 | Graphite boat cleaning equipment for cleaning silicon nitride coating based on microwave plasma dry method |
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