JP2010147262A - Cleaning apparatus, substrate processing system, cleaning method, program, and computer storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suitably remove adhesives deposited to the circumferential edging part of the substrate prior to the photolithographic process of substrate. <P>SOLUTION: A cleaning apparatus 1 includes a spin chuck 20 for holding and rotating a wafer W. The cleaning apparatus 1 is provided therein with a soaking vessel 30 to store the pure water in the temperature higher then the normal temperature. At the side surface in the side of wafer W of the soaking vessel 30, a side surface aperture 33 is formed to insert the circumferential edge part B of the wafer W. The soaking vessel 30 stores the high temperature pure water enough to soak the circumferential edge part B of the wafer W. The cleaning apparatus 1 is also provided with a first cleaning liquid nozzle 50 and a second cleaning liquid nozzle 51 for spraying, in the predetermined pressure, the cleaning liquid in the temperature higher than the normal temperature to the circumferential edge part B of the wafer W. The cleaning liquid supplied from these nozzles 50, 51 is obtained by mixing the pure water and inert gas within a cleaning liquid supplying part 70. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a cleaning apparatus, a substrate processing system, a cleaning method, a program, and a computer storage medium for cleaning a peripheral portion of a substrate before photolithography processing of a substrate such as a semiconductor wafer.

  For example, in a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process is performed by applying a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”), and a predetermined pattern is exposed on the resist film. An exposure process for developing and a development process for developing the exposed resist film are sequentially performed to form a predetermined resist pattern on the wafer. Then, using this resist pattern as a mask, a wafer etching process is performed, and then a resist film peeling process, a wafer cleaning process, and the like are performed to form a predetermined pattern on the wafer. In this way, a process of forming a predetermined pattern on a predetermined layer is repeatedly performed to manufacture a semiconductor device.

  As the above-described cleaning process after the etching process, for example, a wet cleaning method is known in which water is washed with a hydrofluoric acid solution or pure water in a wet processing chamber. However, in this wet cleaning method, pure water or the like is sprayed mainly toward the front surface of the wafer, and therefore particles adhering to the back surface of the wafer cannot be removed.

  Therefore, conventionally, a cleaning method has been proposed in which a substance exhibiting two phases is brought into contact with the back surface of the wafer while holding the outer peripheral portion of the wafer to remove particles adhering to the back surface of the wafer (patent). Reference 1).

JP 2006-147654 A

  By the way, in the above-described etching process, for example, a plasma process using an etching gas is performed. In this case, the energy state of the peripheral edge of the wafer is lower than that of the wafer surface. Then, an etching gas is deposited on the peripheral edge portion of the wafer, and so-called bevel polymer adheres. In addition, a polymer generated from a processing apparatus that performs an etching process or the like adheres to the peripheral edge of the wafer.

  However, when the cleaning method described in Patent Document 1 is used, the back surface of the wafer can be cleaned, but the adhered matter firmly attached to the peripheral edge of the wafer cannot be removed. Further, since it was not clear where the deposits were attached to the peripheral portion of the wafer, it was further difficult to remove the deposits. Then, if the subsequent photolithography process is performed in a state where the deposit is adhered to the peripheral edge portion of the wafer, the photolithography process cannot be appropriately performed. If it does so, the quality of the semiconductor device manufactured from the said wafer will fall, and the yield of a semiconductor device will fall.

  In particular, in the exposure process, so-called immersion exposure is performed between the exposure lens and the substrate through an immersion liquid, for example, pure water. When performing this immersion exposure, the periphery of the wafer is exposed. The deposits may peel off and mix in the immersion liquid. In this case, since the adhering material blocks light, exposure cannot be performed appropriately. As a result, the quality of the semiconductor device manufactured from the wafer is lowered, and the yield of the semiconductor device is lowered.

  This invention is made | formed in view of this point, and it aims at removing suitably the deposit | attachment adhering to the peripheral part of a board | substrate before the photolithographic process of a board | substrate.

  In order to achieve the above object, the present invention provides a cleaning apparatus for cleaning a peripheral portion of a substrate before photolithography processing of the substrate, and includes a rotation holding portion that holds the substrate and rotates the substrate, and a peripheral edge of the substrate. A cleaning liquid nozzle that sprays cleaning liquid at a temperature higher than normal temperature on the part at a predetermined pressure, and an immersion container in which an opening for inserting the peripheral edge of the substrate is formed on the side surface and stores pure water at a temperature higher than normal temperature inside. It is characterized by having. The predetermined pressure is set according to the temperature of the cleaning liquid sprayed from the cleaning liquid nozzle. Moreover, normal temperature is 23 degreeC, for example.

  According to the present invention, the peripheral edge of the substrate can be inserted into the immersion container from the opening, and the peripheral edge of the substrate can be immersed in the pure water stored in the immersion container. Pure water can be permeated into the adhered matter. Moreover, since pure water is at a temperature higher than room temperature, the deposits easily peel off from the peripheral edge of the substrate. Then, the substrate is rotated by the rotation holding unit, and the cleaning liquid having a temperature higher than the normal temperature can be sprayed from the cleaning liquid nozzle to the peripheral portion of the substrate immersed in pure water, so that the substrate is easily peeled off from the peripheral portion of the substrate. Deposits can be removed from the periphery of the substrate. In this way, the deposits attached to the peripheral portion of the substrate can be removed in two stages, so even if the deposits are firmly attached, the deposits can be appropriately removed from the peripheral portion of the substrate before the photolithography process. Can do. In particular, since the peripheral portion of the substrate is immersed in high-temperature pure water, the attached matter can be appropriately removed from the peripheral portion of the substrate even if the attachment location of the attached matter on the peripheral portion of the substrate is not clear. . Then, the subsequent photolithography process can be appropriately performed, the quality of the semiconductor device manufactured from the substrate can be improved, and the yield of the semiconductor device can be improved.

  The cleaning liquid is preferably pure water mixed with an inert gas.

  A plurality of the cleaning liquid nozzles may be provided.

  A plurality of the immersion containers may be provided.

  The upper surface of the immersion container is opened, and the cleaning device may further include a pure water nozzle that supplies pure water having a temperature higher than normal temperature into the immersion container from above the immersion container.

  The side surface of the immersion container where the opening is formed may be curved along the outer periphery of the substrate.

  The immersion container may be provided with an ultrasonic oscillator that applies ultrasonic waves to the pure water in the immersion container.

  According to another aspect, the substrate processing system of the present invention includes the cleaning apparatus and a processing unit that performs photolithography processing on the substrate.

  According to another aspect of the present invention, there is provided a cleaning method for removing deposits adhering to a peripheral portion of a substrate before photolithography treatment of the substrate, wherein the peripheral portion of the substrate is immersed in pure water having a temperature higher than room temperature, A dipping step for allowing pure water to penetrate into the deposit, and a spraying step for removing the deposit by spraying a cleaning liquid at a temperature higher than normal temperature onto the peripheral portion of the substrate at a predetermined pressure.

  The cleaning liquid is preferably pure water mixed with an inert gas.

  In the immersion step, ultrasonic waves may be applied to pure water in which the peripheral edge of the substrate is immersed.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the cleaning apparatus in order to cause the cleaning apparatus to execute the cleaning method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, it is possible to appropriately remove deposits adhering to the peripheral portion of the substrate before the photolithography processing of the substrate.

  Embodiments of the present invention will be described below. FIG. 1 is a longitudinal sectional view showing an outline of the configuration of the cleaning apparatus 1 according to the present embodiment, and FIG. 2 is a cross-sectional view showing an outline of the configuration of the cleaning apparatus 1.

  As shown in FIG. 1, the cleaning apparatus 1 includes a processing container 10 that can seal the inside. As shown in FIG. 2, a loading / unloading port 11 for the wafer W is formed on one side surface of the processing container 10, and an opening / closing shutter 12 is provided at the loading / unloading port.

  As shown in FIG. 1, a spin chuck 20 as a rotation holding unit that holds the wafer W by suction is provided inside the processing container 10. The spin chuck 20 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 20 by suction from the suction port.

  The spin chuck 20 includes a drive mechanism 21 including, for example, a motor, and can be rotated at a predetermined speed by the drive mechanism 21. Further, the drive mechanism 21 is provided with an elevating drive source such as a cylinder, and the spin chuck 20 can move up and down.

  A guide ring 22 is provided on the lower side of the spin chuck 20, and an outer peripheral edge of the guide ring 22 is bent and extends downward. A cup 23 is provided so as to surround the spin chuck 20, the wafer W held by the spin chuck 20 and the guide ring 22. The cup 23 can receive and collect the liquid scattered or dropped from the wafer W.

  The cup 23 is formed with an opening larger than the wafer W on the upper surface so that the spin chuck 20 can be moved up and down, and a gap 24 is formed between the side peripheral surface and the outer peripheral edge of the guide ring 22. Has been. The lower side of the cup 23 forms a gas-liquid separator by forming a curved path together with the outer peripheral edge of the guide ring 22. An exhaust port 25 for exhausting the atmosphere in the cup 23 is formed in the inner region of the bottom of the cup 23, and an exhaust pipe 25 a is connected to the exhaust port 25. Further, a drain port 26 for discharging the collected liquid is formed in the outer region of the bottom portion of the cup 23, and a drain tube 26 a is connected to the drain port 26.

  On the side of the spin chuck 20 and on the inside of the cup 23, an immersion container 30 capable of temporarily storing pure water is provided. The immersion container 30 is movable in the horizontal direction (Y direction in FIGS. 1 and 2).

  The immersion container 30 has a substantially rectangular parallelepiped shape as shown in FIG. The upper surface of the immersion container 30 is opened, and an upper surface opening 31 is formed. A curved portion 32 that is curved along the outer periphery of the wafer W is formed on the side surface of the immersion container 30 on the wafer W side. Further, a side opening 33 for inserting a peripheral portion of the wafer W is formed on the side surface of the immersion container 30 on the wafer W side. With this configuration, as shown in FIG. 2, only the peripheral edge B of the wafer W is inserted into the immersion container 30 from the side opening 33. The bending portion 32 is formed such that the distance L from the bending portion 32 to the end portion of the wafer W is a length that matches the length of the peripheral edge portion B, for example, 5 mm to 8 mm.

  A pure water nozzle 40 for supplying pure water into the immersion container 30 is disposed above the immersion container 30. A supply pipe 42 communicating with a pure water supply source 41 is connected to the pure water nozzle 40. Pure water is stored in the pure water supply source 41. In the supply pipe 42, a heating device 43 such as a heater for heating pure water and a supply device group 44 including a valve and a flow rate adjusting unit for controlling the flow of pure water are provided in this order from the pure water supply source 41. Is provided.

  The pure water supplied from the pure water supply source 41 is heated to, for example, 70 ° C. or higher by the heating device 43 and supplied to the pure water nozzle 40. The heated pure water is supplied from the pure water nozzle 40 into the immersion container 30 as shown in FIG. The pure water in the immersion container 30 flows downward in the immersion container 30 and flows out from the gap between the lower surface of the wafer W and the side opening 33. Therefore, the peripheral edge B of the wafer W is immersed in high-temperature pure water of, for example, 70 ° C. or higher in the immersion container 30. Note that the temperature of the pure water in the immersion container 30 is not limited to the present embodiment as long as it is higher than room temperature.

  Further, on the side of the spin chuck 20, for example, a first cleaning liquid nozzle 50 that sprays the cleaning liquid onto the peripheral edge B of the wafer W at a position facing the immersion container 30 is provided. The first cleaning liquid nozzle 50 is disposed so that the axial direction thereof coincides with the radial direction of the wafer W, that is, the cleaning liquid is disposed in a direction perpendicular to the tangential direction of the peripheral edge B of the wafer W. Further, below the spin chuck 20, a second cleaning liquid nozzle 51 that sprays the cleaning liquid onto the peripheral portion B of the wafer W is provided together with the first cleaning liquid nozzle 50. The second cleaning liquid nozzle 51 is arranged so that its axial direction is the vertical direction. In the present embodiment, the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 are provided, but only one of them may be provided.

  Supply pipes 60 and 61 for supplying a cleaning liquid are connected to the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51, respectively. The supply pipes 60 and 61 communicate with the cleaning liquid supply unit 70 via a supply device group 62 including a valve that controls the flow of the cleaning liquid, a flow rate adjusting unit, and the like.

  The cleaning liquid supply unit 70 includes a pure water supply source 71 that stores pure water therein and an inert gas supply source 72 that stores an inert gas such as nitrogen gas. Supply pipes 73 and 74 are connected to the pure water supply source 71 and the inert gas supply source 72, respectively. The supply pipe 73 is provided with a heating device 75 such as a heater for heating pure water. The supply pipes 73 and 74 merge on the downstream side and are connected to the supply pipe 76. The supply pipe 76 is connected to the supply device group 62. The supply pipe 76 is provided with a heating device 77 such as a heater for heating the cleaning liquid.

  Then, pure water is supplied from the pure water supply source 71 to the supply pipe 73 at, for example, 0.5 MPa to 1.0 MPa. The supplied pure water is heated to, for example, 100 ° C. by the heating device 75. On the other hand, the inert gas is supplied from the inert gas supply source 72 to the supply pipe 74 at, for example, 0.5 MPa to 1.0 MPa. The pure water and the inert gas are mixed on the downstream side of the supply pipes 73 and 74, and the cleaning liquid generated thereby flows through the supply pipe 76. The generated cleaning liquid is heated to, for example, 130 ° C. by the heating device 77 and is supplied to the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 via the supply device group 62. Then, pure water having a high temperature of, for example, 70 ° C. or higher is sprayed from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 to the peripheral edge B of the wafer W at a predetermined pressure, for example, 0.3 MPa to 0.5 MPa. The temperature of the pure water sprayed from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 is not limited to the present embodiment as long as it is higher than room temperature.

  The above cleaning apparatus 1 is provided with a control unit 100 as shown in FIG. The control unit 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit includes a rotation operation and a vertical operation of the spin chuck 20 of the cleaning device 1, a supply operation of the pure water nozzle 40 by the supply device group 44, and a first cleaning liquid nozzle 50 and a second cleaning liquid nozzle by the supply device group 62. A program for controlling the supply operation 51 and the generation operation of the cleaning liquid in the cleaning liquid supply unit 70 is stored. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 100 from the storage medium.

  Next, a method for cleaning the peripheral portion B of the wafer W performed using the cleaning apparatus 1 configured as described above will be described.

  For example, after the etching process, the wafer W transferred to the cleaning apparatus 1 is first sucked and held by the spin chuck 20. At this time, the immersion container 30 is retracted to a position where it does not buffer with the wafer W. Subsequently, the wafer W is lowered to a predetermined position, and the immersion container 30 is moved to insert the peripheral edge B of the wafer W into the immersion container 30 from the side opening 33.

  Thereafter, the wafer W is rotated at a low speed of 0.2 rpm to 10 rpm, for example. At the same time, high-temperature pure water of, for example, 70 ° C. or higher is supplied from the pure water nozzle 40 into the immersion container 30. Then, the peripheral edge B of the wafer W is immersed in high-temperature pure water for a predetermined time, for example, about 10 seconds. If it does so, pure water will osmose | permeate the deposit | attachment adhering to the peripheral part B, and an adhering substance will be in the state which peels easily from the peripheral part B.

  Thereafter, when the peripheral edge B of the wafer W soaked in pure water reaches the position of the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51, the first cleaning liquid nozzle 50 and the second cleaning liquid 50 with respect to the peripheral edge B. A high temperature cleaning liquid of, for example, 70 ° C. or higher is sprayed from the cleaning liquid nozzle 51 at a high pressure of 0.3 MPa to 0.5 MPa. If it does so, a deposit | attachment will be peeled from the peripheral part B and removed by this washing | cleaning liquid.

  Then, when the wafer W is rotated, for example, 1 to 2 to remove the deposits from the entire periphery of the peripheral edge B, the pure water is supplied from the pure water nozzle 40, and the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle. Stop spraying the cleaning liquid from 51. Thereafter, the wafer W is rotated at a high speed of, for example, 2000 rpm for about 15 seconds, for example, and the pure water and the cleaning liquid adhering to the wafer W are dried. Thus, the cleaning process of the peripheral edge B of the series of wafers W is completed, and the wafers W are transferred to the next photolithography process.

  According to the above embodiment, the peripheral edge B of the wafer W is inserted into the immersion container 30 from the side opening 33, and the peripheral edge B is immersed with pure water stored in the immersion container 30. Pure water can be permeated into the adhering matter adhering to the peripheral portion B. Moreover, since the pure water is hot, the deposits are easily peeled off from the peripheral edge B. And since the high temperature washing | cleaning liquid was sprayed from the 1st washing | cleaning liquid nozzle 50 and the 2nd washing | cleaning liquid nozzle 51 with respect to the peripheral part B immersed in the pure water, the deposit | attachment which became easy to peel from the peripheral part B is said peripheral part. B can be removed. As described above, the deposits attached to the peripheral portion B of the wafer W can be removed in two stages. Therefore, even if the deposits are firmly attached, the deposits are appropriately removed from the peripheral portion B before the photolithography process. be able to. In particular, since the peripheral portion B is immersed in high-temperature pure water, the attached matter can be appropriately removed from the peripheral portion B even if the attached place of the attached matter in the peripheral portion B is not clear. If it does so, the subsequent photolithography process can be performed appropriately, the quality of the semiconductor device manufactured from the wafer W can be improved, and the yield of a semiconductor device can be improved.

  In addition, since the cleaning liquid sprayed from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 contains an inert gas, the inert gas collides with deposits attached to the peripheral portion B of the wafer W. , Removal of deposits from the peripheral edge B is facilitated.

  The immersion container 30 of the above embodiment may be provided with an ultrasonic oscillation unit 110 that applies ultrasonic waves to the pure water in the immersion container 30 as shown in FIG. This makes it easier for the pure water in the immersion container 30 to permeate the deposit on the peripheral portion B of the wafer W, and the deposit on the peripheral portion B can be more appropriately removed.

  Further, a plurality of first cleaning liquid nozzles 50 and second cleaning liquid nozzles 51 in the above embodiment may be provided as shown in FIG. At this time, the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 are provided on the circumference of the wafer W at equal intervals. In addition to the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51, a third cleaning liquid nozzle 120 may be further provided as shown in FIG. The third cleaning liquid nozzle 120 is arranged such that its axial direction coincides with the tangential direction of the peripheral edge B. Further, a plurality of immersion containers 30 may be provided as shown in FIG. At this time, the immersion containers 30 are provided at equal intervals on the circumference of the wafer W. As described above, in any of the embodiments, since the cleaning ability of the peripheral portion B of the wafer W is improved, the peripheral portion B can be cleaned in a shorter time.

  The above-described cleaning apparatus 1 may be provided in a coating and developing processing system 200 as a substrate processing system that performs photolithography processing on the wafer W as shown in FIG.

  As shown in FIG. 9, the coating / development processing system 200 includes, for example, a cassette station 201 into which a cassette C containing a plurality of wafers W is carried in and out of the outside, and a predetermined single-wafer type in a photolithography process. A configuration in which a processing station 202 as a processing unit including a plurality of various processing apparatuses that perform processing and an interface station 204 that transfers the wafer W between the exposure apparatus 203 adjacent to the processing station 202 are integrally connected. Have.

  The cassette station 201 is provided with a cassette mounting table 210. A plurality of, for example, four cassette mounting plates 211 are provided on the cassette mounting table 210. The cassette mounting plates 211 are provided in a line in the horizontal X direction (vertical direction in FIG. 9). The cassette C can be placed on these cassette placement plates 211 when the cassette C is carried into and out of the coating and developing treatment system 200. In addition, the carrying in / out of the cassette between the coating and developing treatment system 200 and the outside thereof is performed by the external cassette carrying device A shown in FIG. 10 that carries the cassette between the processing devices in the factory.

  As shown in FIG. 9, the cassette station 201 is provided with a wafer transfer device 221 that can move on a transfer path 220 extending in the X direction. The wafer transfer device 221 is also movable in the vertical direction and the vertical axis direction (θ direction), and includes a cassette C on each cassette mounting plate 211 and a delivery device for a third block G3 of the processing station 202 described later. The wafer W can be transferred between the two.

  The processing station 202 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices. For example, the first block G1 is provided on the front side of the processing station 202 (X direction negative direction side in FIG. 9), and the second side is provided on the back side of the processing station 202 (X direction positive direction side in FIG. 9). Block G2 is provided. A third block G3 is provided on the cassette station 201 side (Y direction negative direction side in FIG. 9) of the processing station 202, and the interface station 204 side (Y direction positive direction side in FIG. 9) of the processing station 202 is provided. Is provided with a fourth block G4.

  For example, in the first block G1, as shown in FIG. 11, a plurality of liquid processing devices, for example, a developing device 230 for developing the wafer W, an antireflection film (hereinafter referred to as “lower antireflection”) under the resist film of the wafer W. A lower antireflection film forming device 231 for forming a film ”, a resist coating device 232 for applying a resist solution to the wafer W to form a resist film, and an antireflection film (hereinafter referred to as“ upper portion ”on the resist film of the wafer W). An upper antireflection film forming device 233 for forming an “antireflection film” is stacked in four stages in order from the bottom.

  For example, each of the devices 230 to 233 of the first block G1 has a plurality of cups F that accommodate the wafers W in the horizontal direction during processing, and can process the plurality of wafers W in parallel.

  For example, in the second block G2, as shown in FIG. 10, a heat treatment apparatus 240 for performing heat treatment of the wafer W, an adhesion apparatus 241 for hydrophobizing the wafer W, a peripheral exposure apparatus 242 for exposing the outer peripheral portion of the wafer W, A cleaning apparatus 1 for cleaning the peripheral portion B of the wafer W described above is provided side by side in the vertical direction and the horizontal direction. The heat treatment apparatus 240 has a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment. In addition, the number and arrangement | positioning of the heat processing apparatus 240, the adhesion apparatus 241, the peripheral exposure apparatus 242, and the washing | cleaning apparatus 1 can be selected arbitrarily.

  For example, in the third block G3, a plurality of delivery devices 250, 251, 252, 253, 254, 255, and 256 are provided in order from the bottom. The fourth block G4 is provided with a plurality of delivery devices 260, 261, and 262 in order from the bottom.

  As shown in FIG. 9, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. For example, a wafer transfer device 270 is disposed in the wafer transfer region D.

  The wafer transfer device 270 has a transfer arm that is movable in the Y direction, the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 270 moves in the wafer transfer area D, and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

  For example, as shown in FIG. 10, a plurality of wafer transfer devices 270 are arranged in the vertical direction, and can transfer the wafer W to a predetermined device having the same height of each of the blocks G1 to G4, for example.

  The wafer transfer area D is provided with a shuttle transfer device 280 that transfers the wafer W linearly between the third block G3 and the fourth block G4.

  The shuttle transfer device 280 is linearly movable in the Y direction, for example. The shuttle transfer device 280 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 252 of the third block G3 and the transfer device 262 of the fourth block G4.

  As shown in FIG. 9, a wafer transfer device 290 is provided next to the third block G3 on the positive side in the X direction. The wafer transfer device 290 has a transfer arm that is movable in the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 290 moves up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.

  The interface station 204 is provided with a wafer transfer device 300 and a delivery device 301. The wafer transfer apparatus 300 has a transfer arm that is movable in the Y direction, the θ direction, and the vertical direction, for example. For example, the wafer transfer apparatus 300 can support the wafer W on a transfer arm and transfer the wafer W to each transfer apparatus and transfer apparatus 301 in the fourth block G4.

  The above substrate processing system 1 is provided with the control unit 100 described above as shown in FIG. In the program storage unit of the control unit 100, in addition to the program for controlling the operation of the cleaning apparatus 1, the operation of driving systems such as the above-described various processing apparatuses and transport apparatuses is controlled, and a coating and developing processing system 200 described later is included. A program for realizing predetermined actions, that is, application of resist solution to the wafer W, development, exposure, heat treatment, delivery of the wafer W, control of each apparatus, and the like is also stored.

  Next, a method for processing the wafer W performed using the coating and developing processing system 200 configured as described above will be described.

  First, a cassette C containing a plurality of wafers W is placed on a predetermined cassette placement plate 211 of the cassette station 201 shown in FIG. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 221 and transferred to, for example, the transfer device 253 of the third block G3 of the processing station 202.

  Next, the wafer W is transferred to the cleaning device 1 of the second block G2 by the wafer transfer device 270, and the cleaning process of the peripheral portion B of the wafer W is performed. The cleaning process in the cleaning apparatus 1 is the same as that in the above embodiment, and thus the description thereof is omitted.

  Thereafter, the wafer W is transferred to the heat treatment apparatus 240 of the second block G2 by the wafer transfer apparatus 270, and the temperature is adjusted. Thereafter, the wafer W is transferred to the lower antireflection film forming device 231 of the first block G1 by the wafer transfer device 270, and a lower antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 240 of the second block G2, heated, temperature-controlled, and then returned to the delivery apparatus 253 of the third block G3.

  Next, the wafer W is transferred by the wafer transfer device 290 to the delivery device 254 of the same third block G3. Thereafter, the wafer W is transferred to the adhesion device 241 of the second block G2 by the wafer transfer device 270 and subjected to an adhesion process. Thereafter, the wafer W is transferred to the resist coating device 232 by the wafer transfer device 270, and a resist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 240 by the wafer transfer apparatus 270 and pre-baked. Thereafter, the wafer W is transferred by the wafer transfer device 270 to the delivery device 255 of the third block G3.

  Next, the wafer W is transferred to the upper antireflection film forming device 233 by the wafer transfer device 270, and an upper antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 240 by the wafer transfer apparatus 270 and heated to adjust the temperature. Thereafter, the wafer W is transferred to the peripheral exposure device 242 and subjected to peripheral exposure processing.

  Thereafter, the wafer W is transferred by the wafer transfer device 270 to the delivery device 256 of the third block G3.

  Next, the wafer W is transferred to the transfer device 252 by the wafer transfer device 290, and is transferred to the transfer device 262 of the fourth block G4 by the shuttle transfer device 280. Thereafter, the wafer W is transferred to the exposure apparatus 203 by the wafer transfer apparatus 300 of the interface station 204 and subjected to exposure processing.

  Next, the wafer W is transferred by the wafer transfer apparatus 300 from the exposure apparatus 203 to the delivery apparatus 260 of the fourth block G4. Thereafter, the wafer W is transferred to the heat treatment apparatus 240 by the wafer transfer apparatus 270 and subjected to post-exposure baking. Thereafter, the wafer W is transferred to the developing device 230 by the wafer transfer device 270 and developed. After completion of the development, the wafer W is transferred to the heat treatment apparatus 240 by the wafer transfer apparatus 270 and subjected to a post baking process.

  Thereafter, the wafer W is transferred to the delivery device 250 of the third block G3 by the wafer transfer device 270, and then transferred to the cassette C of the predetermined cassette mounting plate 211 by the wafer transfer device 221 of the cassette station 201. Thus, a series of photolithography steps is completed.

  Also in the above embodiment, before the photolithography process is performed on the wafer W, the deposits on the peripheral edge B of the wafer W can be appropriately removed in the cleaning apparatus 1. If it does so, the subsequent photolithography process can be performed appropriately, the quality of the semiconductor device manufactured from the wafer W can be improved, and the yield of a semiconductor device can be improved.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  Hereinafter, the cleaning effect when the cleaning apparatus of the present invention is used will be described. As the cleaning apparatus of the present invention, the cleaning apparatus 1 previously shown in FIGS. 1 and 2 was used. In this example, pure water heated to 75 ° C. was supplied into the immersion container 30. Further, from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51, pure water at 75 ° C. was sprayed onto the peripheral edge B of the wafer W at 0.4 MPa.

  Further, as a comparative example, cleaning was performed when the immersion container 30 of the cleaning device 1 was not provided. That is, the peripheral edge B of the wafer W was cleaned by spraying only the cleaning liquid from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 without immersing the peripheral edge B of the wafer W with pure water. As yet another comparative example, the immersion apparatus 30 is provided in the cleaning apparatus 1, and cleaning was performed when pure water at normal temperature of 23 ° C. was supplied into the immersion container 30. That is, after the peripheral edge B of the wafer W was immersed in pure water at room temperature, the cleaning liquid was sprayed from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 to clean the peripheral edge B of the wafer W. In any of the comparative examples, 75 ° C. pure water was sprayed onto the peripheral edge B of the wafer W from the first cleaning liquid nozzle 50 and the second cleaning liquid nozzle 51 in the same manner as in this example.

  FIG. 12 shows the result of measuring the removal rate of deposits (BSP: bevel polymer) on the peripheral edge of the wafer after performing the cleaning treatment under such conditions. The vertical axis | shaft of FIG. 12 has shown the removal rate of the deposit | attachment. This removal rate indicates the ratio of the area from which deposits are removed to the area of the peripheral edge of the wafer.

  Referring to FIG. 12, when the peripheral portion of the wafer is not soaked with pure water, the deposit removal rate is 41.67%. When the peripheral portion of the wafer is soaked with pure water at room temperature, The kimono removal rate was 53.27%. That is, in any case, the deposit on the peripheral edge cannot be removed.

  On the other hand, when the periphery of the wafer is immersed in high-temperature pure water as in the present invention, the deposit removal rate is 86.97%, indicating that the deposit on the periphery can be almost removed. It was. That is, it was found that when the cleaning apparatus of the present invention is used, the deposits on the peripheral edge of the wafer can be appropriately removed.

  The present invention is useful for cleaning the peripheral portion of a substrate before photolithography processing of the substrate such as a semiconductor wafer.

It is a longitudinal cross-sectional view which shows the outline of a structure of the washing | cleaning apparatus concerning this Embodiment. It is a cross-sectional view which shows the outline of a structure of a washing | cleaning apparatus. It is a perspective view of an immersion container. It is explanatory drawing which showed a mode that pure water flows through the immersion container. It is a longitudinal cross-sectional view which shows the outline of a structure of the washing | cleaning apparatus concerning other embodiment. It is a top view which shows the outline of a structure of the washing | cleaning apparatus concerning other embodiment. It is a top view which shows the outline of a structure of the washing | cleaning apparatus concerning other embodiment. It is a top view which shows the outline of a structure of the washing | cleaning apparatus concerning other embodiment. It is a top view which shows the outline of the internal structure of the coating and developing treatment system concerning other embodiment. It is a side view which shows the outline of an internal structure of a coating and developing treatment system. It is a side view which shows the outline of an internal structure of a coating and developing treatment system. In an Example, it is a graph which shows the result of having measured the removal rate of the deposit | attachment of the peripheral part of a wafer after a washing process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Cleaning apparatus 20 Spin chuck 30 Immersion container 31 Upper surface opening part 32 Curved part 33 Side surface opening part 40 Pure water nozzle 50 First cleaning liquid nozzle 51 Second cleaning liquid nozzle 70 Cleaning liquid supply part 100 Control part 110 Ultrasonic oscillation part 120 First No. 3 cleaning liquid nozzle 200 Coating and developing treatment system 202 Processing station B Peripheral portion W Wafer

Claims (13)

A cleaning apparatus for cleaning a peripheral portion of a substrate before photolithography processing of the substrate,
A rotation holding unit for holding the substrate and rotating the substrate;
A cleaning liquid nozzle that sprays cleaning liquid at a temperature higher than normal temperature on the peripheral edge of the substrate at a predetermined pressure;
A cleaning apparatus, comprising: an immersion container for storing pure water at a temperature higher than room temperature; and an opening for inserting a peripheral edge of the substrate on a side surface. The cleaning apparatus according to claim 1, wherein the cleaning liquid is pure water mixed with an inert gas. The cleaning apparatus according to claim 1, wherein a plurality of the cleaning liquid nozzles are provided. The cleaning apparatus according to claim 1, wherein a plurality of the immersion containers are provided. The upper surface of the immersion container is open,
The cleaning according to any one of claims 1 to 4, wherein the cleaning device further includes a pure water nozzle for supplying pure water having a temperature higher than normal temperature into the immersion container from above the immersion container. apparatus. The cleaning apparatus according to claim 1, wherein the side surface of the immersion container where the opening is formed is curved along the outer periphery of the substrate. The cleaning apparatus according to claim 1, wherein the immersion container is provided with an ultrasonic wave oscillating unit that applies ultrasonic waves to pure water in the immersion container. A substrate processing system comprising: the cleaning apparatus according to claim 1; and a processing unit that performs photolithography processing on a substrate. A cleaning method for removing deposits adhering to the periphery of a substrate before photolithography processing of the substrate,
Immersion step of immersing the peripheral edge of the substrate with pure water at a temperature higher than room temperature, and impregnating the pure water into the deposit,
And a spraying step of spraying a cleaning liquid having a temperature higher than normal temperature on the peripheral edge of the substrate at a predetermined pressure to remove the deposits. The cleaning method according to claim 9, wherein the cleaning liquid is pure water mixed with an inert gas. 11. The cleaning method according to claim 9, wherein in the dipping step, ultrasonic waves are applied to pure water in which a peripheral portion of the substrate is dipped. A program that operates on a computer of a control unit that controls the cleaning device in order to cause the cleaning device to execute the cleaning method of claims 9-11. A readable computer storage medium storing the program according to claim 12.

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