CN202006190U - Process cavity for cleaning semiconductor silicon wafer - Google Patents
Process cavity for cleaning semiconductor silicon wafer Download PDFInfo
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- CN202006190U CN202006190U CN2011200703297U CN201120070329U CN202006190U CN 202006190 U CN202006190 U CN 202006190U CN 2011200703297 U CN2011200703297 U CN 2011200703297U CN 201120070329 U CN201120070329 U CN 201120070329U CN 202006190 U CN202006190 U CN 202006190U
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Abstract
The utility model provides a process cavity for cleaning a semiconductor silicon wafer, wherein a plurality of liftable and rotatable platforms are arranged inside the process cavity; each upper part of the platform is used for fixing a silicon wafer; a cover plate is arranged above the platform; and the cover plate is provided with one or more inlets corresponding to each platform. The process cavity for cleaning a semiconductor silicon wafer can clean a plurality of silicon wafers simultaneously in a single process cavity to improve the technology efficiency, as well as improve the cleaning effect of each silicon wafer and reduce all kinds of consumption of resources.
Description
Technical field
The utility model relates to the integrated circuit processing technique field, is specifically related to a kind of cleaning processing chamber of semi-conductor silicon chip.
Background technology
Follow the continuous progress of integrated circuit fabrication process, it is more and more littler that the volume of semiconductor devices is just becoming, and this has also caused very small particle also to become and has been enough to influence the manufacturing and the performance of semiconductor devices, so it is more and more important that the silicon chip cleaning also becomes.
The cleaning method of industry-wide adoption at present is a wet-cleaning, promptly adopts various soups and pure water to come cleaning silicon chip.When soup contacts with silicon chip, exist the extremely thin moisture film of one deck at silicon chip surface, because the effect of intermolecular attraction, this one deck moisture film is actionless with respect to silicon chip, is also referred to as the boundary layer.The existence in boundary layer has had a strong impact on the cleaning performance of silicon chip.For the particle of those diameters less than boundary layer thickness, can only rely on particle self to diffuse through the boundary layer at leisure, in the ingoing stream, then by the current band from silicon chip surface, these particles are difficult in the cleaning process and are removed.Boundary layer thickness depends on the viscosity of liquid, the relative velocity of liquid and silicon chip surface etc.Reduce boundary layer thickness and become a significant challenge that improves cleaning efficiency.Therefore, a lot of technology comprise that one chip cleans, ultrasonic wave is assisted and cleaned or the like, all are applied to the silicon chip cleaning.
Simultaneously, owing to be subjected to the more and more stricter cost control and the pressure of environmental protection aspect, be exactly the consumption that reduces water and various chemicals as far as possible for the requirement of cleaning, and reduce floor space.
At present, in one chip cleans, improve the method for current relative velocity and have only the silicon chip of quickening rotating speed, therefore, if a kind of design of cleaning processing chamber can be arranged, can improve the silicon chip surface liquid velocity by alternate manner, can reduce boundary layer thickness effectively, and realize to produce very big help to cleaning by use water and chemicals still less.
Yet the cleaning efficiency that one chip cleans has certain limitation, if can clean a plurality of silicon chips simultaneously in single process cavity, will improve process efficiency greatly.Therefore, reducing various resource consumptions when improving cleaning performance, and improve process efficiency by cleaning a plurality of silicon chips simultaneously, is a problem demanding prompt solution.
The utility model content
The purpose of this utility model is to propose a kind of novel semi-conductor silicon chip cleaning processing chamber, can clean a plurality of silicon chips simultaneously in single process cavity and improve process efficiency, can also promote the cleaning performance of each silicon chip, and reduce various resource consumptions.
To achieve these goals, the utility model provides a kind of cleaning processing chamber of semi-conductor silicon chip, described process cavity inside has a plurality of platforms of liftable and rotation, each platform top is used for fixing a silicon chip, described platform top is provided with a cover plate, and corresponding each platform has one or more imports on the described cover plate.
Preferably, when described platform rises to the extreme higher position, has 0.5 millimeter between described cover plate and the silicon chip to 3 mm distance.
Preferably, described import is a liquid-inlet, and described liquid-inlet is connected with liquid line, and the pressure of the cleaning fluid by described liquid-inlet is 5 to 50 pounds/square inch.
Preferably, described each platform also has one or more gas feeds, and described gas feed is connected with gas piping.
Preferably, described each platform is provided with the silicon chip support and is used for fixing described silicon chip.
Preferably, the inside of described silicon chip support is distributed with vacuum line.
Preferably, the quantity of described platform is 2 to 6, and the diameter of described platform is 4 inches to 12 inches, and its maximum speed is 500 to 3000 rpms.
Preferably, described cover plate is provided with ultrasonic oscillator, the quantity of described ultrasonic oscillator is provided with 1 to 4 for corresponding each silicon chip, and the power of each ultrasonic oscillator is for arriving 0.5 to 5 watt every square centimeter of silicon chip surface, and operating frequency is 0.2 to 3 megahertz.
Preferably, the material of described cover plate is a pottery, and diameter is 10 to 40 inches, and thickness is 1 to 20 millimeter.
Preferably, the edge of described cover plate is bent downwardly, and forms the water conservancy diversion guard shield.
Preferably, also be provided with the exhaust outlet pipeline in the cleaning processing chamber of described semi-conductor silicon chip, described exhaust outlet pipeline is arranged on the below of described platform.
Compared with prior art, the utility model is by being arranged on a plurality of platforms of process cavity, and wherein each platform is placed with a silicon chip, has realized that a plurality of silicon chips can clean simultaneously, thereby has improved process efficiency greatly.Above all silicon chips, increase a cover plate, make a cover plate can cover all silicon chips, the space size of restriction silicon chip top, then by regulating silicon chip rotating speed and cleaning fluid supply pressure, can make liquid form very high speed at silicon chip surface, thereby reduce boundary layer thickness, improve cleaning performance.Simultaneously,, can prevent effectively that the suspended particulate and the globule in the process cavity is infected with silicon chip surface once more, can also reduce the consumption of cleaning fluid simultaneously because silicon chip surface all is closed in the minimum space in the whole cleaning process.In addition, the edge of cover plate is bent downwardly, and forms the water conservancy diversion guard shield, avoids cleaning fluid to spill the edge of cover plate, can utilize cleaning fluid more expeditiously.
Description of drawings
Figure 1 shows that the cleaning processing chamber structural representation of the semi-conductor silicon chip of the utility model preferred embodiment;
Figure 2 shows that the top perspective structural representation of cleaning processing chamber of the semi-conductor silicon chip of the utility model preferred embodiment.
The specific embodiment
Be described in further detail below in conjunction with the cleaning processing chamber of the drawings and specific embodiments the semi-conductor silicon chip that the utility model proposes.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of aid illustration the utility model embodiment lucidly.
Please refer to Fig. 1, Figure 1 shows that the cleaning processing chamber structural representation of the semi-conductor silicon chip of the utility model preferred embodiment.The utility model provides a kind of cleaning processing chamber of semi-conductor silicon chip, described process cavity inside has a plurality of platforms 11 of liftable and rotation, each platform 11 top is used for fixing a silicon chip 13, the top of described process cavity is provided with a cover plate 14, the area of described cover plate 14 is enough to cover all platforms 11 and silicon chip 13, and corresponding each platform 11 has one or more imports on the described cover plate 14.
Particularly, described import is a liquid-inlet, and described liquid-inlet is connected with liquid line 15, and the pressure of the cleaning fluid by described liquid-inlet is 5 to 50 pounds/square inch.In the present embodiment, the force value of cleaning fluid is 50 pounds/square inch.Liquid line 15 provides cleaning fluid, make cleaning fluid be sprayed onto silicon chip to be cleaned 13 surfaces, regulate pressure, can make cleaning fluid form very high speed on silicon chip 13 surfaces by the cleaning fluid of liquid-inlet by described liquid-inlet, thereby reduce boundary layer thickness, improve cleaning performance.
In the present embodiment, described each platform 11 also has one or more gas feeds, corresponding each platform 11 has one or more gas feeds on the described cover plate 14, described gas feed is connected with gas piping 16, gas piping 16 provides high pure nitrogen or IPA vapor, it is sprayed onto by gas feed cleans silicon chip 13 surfaces that finish, high pure nitrogen that provides or IPA vapor can help silicon chip 13 rapid draings.
Further, when described platform 11 rises to the extreme higher position, promptly during the cleaning positions of silicon chip 13, have 0.5 millimeter to 3 mm distance between described cover plate 14 and the silicon chip 13, in the present embodiment, the spacing between silicon chip 13 surfaces and the upper cover plate 14 is 2 millimeters.The minimum distance that is had between described cover plate 14 and the silicon chip 13, make that silicon chip 13 surfaces all are closed in the minimum space in whole cleaning process, prevent that effectively the suspended particulate and the globule in the process cavity be infected with silicon chip 13 surfaces once more, can also effectively reduce cleaning fluid consumption simultaneously.
Preferably, described each platform 11 is provided with silicon chip support 12 and is used for fixing described silicon chip 13.The inside of described silicon chip support 12 is distributed with vacuum line (not shown), described vacuum line can provide vacuum environment, utilize the fixedly silicon chip 13 on the silicon chip support 12 of absorption affinity that vacuum produces, the method for this fixedly silicon chip 13 is neither damaged silicon chip 13, does not take up room again.
Preferably, described cover plate 14 is provided with ultrasonic oscillator 17, the quantity of described ultrasonic oscillator 17 is provided with one to four for corresponding each silicon chip 13, in the present embodiment, corresponding each silicon chip 13 has two ultrasonic oscillators 17, the power of each ultrasonic oscillator 17 is for arriving 0.5 to 5 watt every square centimeter on silicon chip 13 surfaces, and operating frequency is 0.2 to 3 megahertz.Will be understood by those skilled in the art that, not only be confined to be provided with ultrasonic oscillator 17 in the described process cavity, can also be that other can produce hyperacoustic instrument.
Further, the edge of described cover plate 14 is bent downwardly, and forms water conservancy diversion guard shield 18, avoids cleaning fluid to spill the edge of cover plate 14, can utilize cleaning fluid more expeditiously.The exhaust outlet pipeline (not shown) of described process cavity is arranged on the below of described platform 11.
Figure 2 shows that the top perspective structural representation of cleaning processing chamber of the semi-conductor silicon chip of the utility model preferred embodiment.With reference to Fig. 2, particularly, the quantity of described platform 11 is 2 to 6, and the diameter of described platform 11 is 4 inches to 12 inches, and the material of described cover plate 14 is a pottery, and diameter is 10 to 40 inches, and thickness is 1 to 20 millimeter.In the present embodiment, the quantity of described platform 11 is 4, and diameter is 8 inches, and the diameter of cover plate 14 is 24 inches, and wherein, the arrangement mode of four platforms 11 is for being arranged side by side in twos.Will be understood by those skilled in the art that the material of described cover plate 14 not only is limited as pottery, can also be other stable chemical performance, meets the material of certain requirement of mechanical strength.
When the cleaning processing chamber of the semi-conductor silicon chip that utilizes embodiment of the present utility model to provide is cleaned, four silicon chips 13 are placed on the silicon chip support 12, utilize vacuum suction to live, rise platform 11 then, make between silicon chip 13 surfaces and the upper cover plate 14 and keep 0.5 millimeter to 3 millimeters spacing, platform 11 drives silicon chip 13 and begins rotation, and its maximum speed is 500 to 3000 rpms, and high rotational speed helps to make cleaning fluid to form very high speed on silicon chip 13 surfaces.In the present embodiment, the rotating speed of platform 11 is 2000 rpms.Cleaning fluid is sprayed onto silicon chip 13 surfaces with 50 pounds/square inch pressure by the liquid-inlet on the cover plate 14, before startup platform 11 is rotated, opens ultrasonic oscillator 17, makes the ultrasonic wave silicon chip of its generation assist cleaning, and then improves process efficiency; Cleaning fluid stops the cleaning fluid supply after cleaning and finishing, and changes pure water rinsing into.
After cleaning is finished, stop to spray pure water, close ultrasonic oscillator 17 simultaneously, gas piping 16 provides high pure nitrogen or IPA vapor, it is sprayed onto by gas feed cleans silicon chip 13 surfaces that finish, high pure nitrogen that provides or IPA vapor can help silicon chip 13 rapid draings.After silicon chip 13 dryings were finished, platform 11 stopped operating and falls, and the exterior mechanical arm takes out silicon chip 13.
In sum, the utility model is by being arranged on a plurality of platforms 11 of process cavity, and wherein each platform 11 is placed with a silicon chip 13, has realized that a plurality of silicon chips 13 can clean simultaneously, thereby has improved process efficiency greatly.Above all silicon chips 13, increase a cover plate 14, make a cover plate 14 can cover all silicon chips 13, the space size of restriction silicon chip 13 tops, then by regulating silicon chip 13 rotating speeds and cleaning fluid supply pressure, can make liquid form very high speed on silicon chip 13 surfaces, thereby reduce boundary layer thickness, improve cleaning performance, can also reduce the consumption of cleaning fluid.Simultaneously, because silicon chip 13 surfaces all are closed in the minimum space in the whole cleaning process, can prevent effectively that the suspended particulate and the globule in the process cavity is infected with silicon chip surface once more.In addition, the edge of cover plate 14 is bent downwardly, and forms water conservancy diversion guard shield 18, avoids cleaning fluid to spill the edge of cover plate 14, can utilize cleaning fluid more expeditiously.
Though the utility model discloses as above with preferred embodiment, so it is not in order to limit the utility model.Have in the technical field under the utility model and know the knowledgeable usually, in not breaking away from spirit and scope of the present utility model, when being used for a variety of modifications and variations.Therefore, protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (11)
1. the cleaning processing chamber of a semi-conductor silicon chip, it is characterized in that described process cavity inside has a plurality of platforms of liftable and rotation, each platform top is used for fixing a silicon chip, described platform top is provided with a cover plate, and corresponding each platform has one or more imports on the described cover plate.
2. the cleaning processing chamber of semi-conductor silicon chip according to claim 1 is characterized in that, when described platform rises to the extreme higher position, has 0.5 millimeter between described cover plate and the silicon chip to 3 mm distance.
3. the cleaning processing chamber of semi-conductor silicon chip according to claim 1 is characterized in that, described import is a liquid-inlet, and described liquid-inlet is connected with liquid line, and the pressure of the cleaning fluid by described liquid-inlet is 5 to 50 pounds/square inch.
4. the cleaning processing chamber of semi-conductor silicon chip according to claim 1 is characterized in that, described each platform also has one or more gas feeds, and described gas feed is connected with gas piping.
5. the cleaning processing chamber of semi-conductor silicon chip according to claim 1 is characterized in that, described each platform is provided with the silicon chip support and is used for fixing described silicon chip.
6. the cleaning processing chamber of semi-conductor silicon chip according to claim 5 is characterized in that, the inside of described silicon chip support is distributed with vacuum line.
7. according to the cleaning processing chamber of each described semi-conductor silicon chip in the claim 1 to 6, it is characterized in that the quantity of described platform is 2 to 6, the diameter of described platform is 4 inches to 12 inches, and its maximum speed is 500 to 3000 rpms.
8. according to the cleaning processing chamber of each described semi-conductor silicon chip in the claim 1 to 6, it is characterized in that, described cover plate is provided with ultrasonic oscillator, the quantity of described ultrasonic oscillator is provided with 1 to 4 for corresponding each silicon chip, the power of each ultrasonic oscillator is for arriving 0.5 to 5 watt every square centimeter of silicon chip surface, and operating frequency is 0.2 to 3 megahertz.
9. according to the cleaning processing chamber of each described semi-conductor silicon chip in the claim 1 to 6, it is characterized in that the material of described cover plate is a pottery, diameter is 10 to 40 inches, and thickness is 1 to 20 millimeter.
10. the cleaning processing chamber of semi-conductor silicon chip according to claim 1 is characterized in that, the edge of described cover plate is bent downwardly, and forms the water conservancy diversion guard shield.
11. the cleaning processing chamber of semi-conductor silicon chip according to claim 1 is characterized in that, also is provided with the exhaust outlet pipeline in the cleaning processing chamber of described semi-conductor silicon chip, described exhaust outlet pipeline is arranged on the below of described platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200703297U CN202006190U (en) | 2011-03-17 | 2011-03-17 | Process cavity for cleaning semiconductor silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200703297U CN202006190U (en) | 2011-03-17 | 2011-03-17 | Process cavity for cleaning semiconductor silicon wafer |
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| Publication Number | Publication Date |
|---|---|
| CN202006190U true CN202006190U (en) | 2011-10-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011200703297U Expired - Lifetime CN202006190U (en) | 2011-03-17 | 2011-03-17 | Process cavity for cleaning semiconductor silicon wafer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522358A (en) * | 2011-12-30 | 2012-06-27 | 上海集成电路研发中心有限公司 | Photoresist stripping technical cavity and photoresist stripping method for semiconductor silicon wafer |
| CN106298595A (en) * | 2016-08-29 | 2017-01-04 | 安徽凯达能源科技有限公司 | The acid dip pickle of solar battery sheet |
| CN107520686A (en) * | 2017-08-25 | 2017-12-29 | 浙江羿阳太阳能科技有限公司 | A kind of silicon chip novel polishing device |
| CN111701767A (en) * | 2020-06-18 | 2020-09-25 | 江苏中关村嘉拓新能源设备有限公司 | Extrusion coating cleaning cavity series and cleaning method |
-
2011
- 2011-03-17 CN CN2011200703297U patent/CN202006190U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522358A (en) * | 2011-12-30 | 2012-06-27 | 上海集成电路研发中心有限公司 | Photoresist stripping technical cavity and photoresist stripping method for semiconductor silicon wafer |
| CN102522358B (en) * | 2011-12-30 | 2016-04-06 | 上海集成电路研发中心有限公司 | The degumming process chamber of semi-conductor silicon chip and method of removing photoresist |
| CN106298595A (en) * | 2016-08-29 | 2017-01-04 | 安徽凯达能源科技有限公司 | The acid dip pickle of solar battery sheet |
| CN107520686A (en) * | 2017-08-25 | 2017-12-29 | 浙江羿阳太阳能科技有限公司 | A kind of silicon chip novel polishing device |
| CN111701767A (en) * | 2020-06-18 | 2020-09-25 | 江苏中关村嘉拓新能源设备有限公司 | Extrusion coating cleaning cavity series and cleaning method |
| CN111701767B (en) * | 2020-06-18 | 2023-12-12 | 江苏嘉拓新能源智能装备股份有限公司 | Extrusion coating cleaning cavity system and cleaning method |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111012 |