CN202290654U - Mega sonic cleaning head and mega sonic cleaning system comprising same - Google Patents
Mega sonic cleaning head and mega sonic cleaning system comprising same Download PDFInfo
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- CN202290654U CN202290654U CN 201120383102 CN201120383102U CN202290654U CN 202290654 U CN202290654 U CN 202290654U CN 201120383102 CN201120383102 CN 201120383102 CN 201120383102 U CN201120383102 U CN 201120383102U CN 202290654 U CN202290654 U CN 202290654U
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- mega sonic
- cleaning head
- sonic wave
- wave cleaning
- resonator
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Abstract
The utility model discloses a mega sonic cleaning head and a mega sonic cleaning system comprising the same. The cleaning head comprises an energy converter and a resonator, wherein the resonator is used for propagating energy from the energy converter; the resonator is provided with an upper surface and a lower surface; the upper surface is coupled to the energy converter; and the resonator is internally provided with a vacuum hole array which does not pass through the upper surface and the lower surface. The mega sonic cleaning head provided by the utility model adopts the resonator which is internally provided with the non-through vacuum hole array in a cylindrical shape or other geometrical shapes; the action of compensating consumption is achieved through the multiple reflections of a mega sonic wave in the resonator; the nonuniformity of a vibration wave is eliminated; and the uniform distribution of the energy of the mega sonic wave is achieved. When ultrapure water or chemical liquid is sprayed on a semiconductor, impurities on the semiconductor are washed off through a uniform fluid wave generated by the mega sonic wave and are taken away through the flowage of the liquid, so as to achieve the cleaning of the semiconductor, and furthermore, the damage to the semiconductor is smaller.
Description
Technical field
The utility model relates to semiconductor cleaning field, relates to a kind of mega sonic wave cleaning head especially and has the mega sonic wave purging system of this cleaning head.
Background technology
Along with sub-micron and deep-submicron super large-scale integration (ULSI) are being followed " Moore's Law " and are being developed rapidly; The design live width sharply reduces; The volume of semiconductor chip is also more and more littler; How to control the mechanical damage of silicon chip surface material, and under the prerequisite of protection silicon chip surface flatness, reduce the silicon chip defect concentration to greatest extent, control its fraction defective, this has become a major challenge of current semiconductor cleaning technique.Following control electrode of 65 nanometer nodes and capacitance structure are more and more fragile.When the integrated circuit live width becomes littler and littler, the particle that can influence the silicon chip fraction defective is also more and more littler, and the more little more difficult cleaning of particle.On chip, how avoiding the micro-structural damage also is the very difficult problem of tool challenge, and cleaning technique now has a variety of, and mega sonic wave cleans and paid close attention to its special energy mode always.The mechanism that mega sonic wave cleans is by shake frequently effect and combine the chemical reaction of chemical that silicon chip is cleaned of high energy.When cleaning, sending wavelength by transducer is that 1 μ m frequency is the high energy sound wave of 0.8 megahertz, and solution molecule is done accelerated motion under the promotion of this sound wave, and maximum instantaneous velocity can reach 30cm/s.Therefore, formed not the such bubble of ultrasonic waves for cleaning, and can only be, the fine particles of the pollutant that silicon chip surface adheres to has been forced removes and enter into cleaning fluid with fluid wave bump wafer surface at a high speed.Mega sonic wave cleaning polishing sheet can remove on the wafer surface less than the particle of 0.2 μ m, and this method can play the effect that machinery is wiped sheet and two kinds of methods of Chemical cleaning simultaneously.But also have certain defective for the direction of megasonic energy and the control of the uniformity, in cleaning process, the energy perpendicular to Si-gate of generation makes it receive shearing force easy generation flexural deformation even root fracture, and semiconductor is caused damage.
The utility model content
The technical problem that (one) will solve
The purpose of the utility model is to provide a kind of can in cleaning process, the minimizing that semiconductor is caused the mega sonic wave cleaning head of damage and has the mega sonic wave purging system of this cleaning head.
(2) technical scheme
In order to solve the problems of the technologies described above, the utility model provides a kind of mega sonic wave cleaning head, comprising:
Transducer;
Resonator is used to propagate the energy from transducer; This resonator has upper surface and lower surface, and upper surface is coupled to transducer, and resonator inside has the hole array of the vacuum of not penetrating upper surface, lower surface.
Preferably, the geometry in the hole in the array of said hole includes but not limited to: column type, honeycomb fashion.
Preferably, the length in column type hole is 5: 1 to 10: 1 with the equivalent diameter ratio.
Preferably, said transducer comprises:
Upper shell has cable connector, can be connected with power amplifier through cable connector;
Coupling layer comprises piezo-electric crystal and coupling piece, and piezo-electric crystal closely is connected with the upper surface of coupling piece, and coupling layer is through coupling piece and upper shell coupling.
Preferably, said upper shell also has an air admission hole and a steam vent, and inner have one and have a plurality of annular boss that are uniformly distributed with groove upper shell inside is divided into inside loop and outside loop; The cold gas that is fed by air admission hole, interior ring and the groove through upper shell can make coupling layer got rid of by steam vent by even cooling back, thereby realization is to the even cooling of coupling layer.
Preferably, said coupling layer also comprises sealing ring, is located on the coupling piece, is used for the coupling place sealing with coupling piece and upper shell coupling.
Preferably, said coupling piece is processed by single medium or multimedium, and thickness is the integral multiple of 1/4 wavelength.
Preferably, being shaped as but being not limited to of this mega sonic wave cleaning head and said coupling layer: cylindrical, rectangle or ellipse.
Preferably, the area of the hole array in the said resonator is slightly larger than the effective area of piezo-electric crystal.
Preferably, said resonator is as lower house, with the lower surface coupling of coupling piece, and is connected with upper shell through connected nail.
The utility model also provides a kind of mega sonic wave purging system with above-mentioned mega sonic wave cleaning head, and this system also comprises mounting bracket, and said mega sonic wave cleaning head is installed on the mounting bracket regularly or movably.
(3) beneficial effect
The utility model mega sonic wave cleaning head adopts the resonator of the hole array of inner impermeable vacuum with cylindrical or other geometry; Play the effect that compensation consumes through the mega sonic wave repeatedly reflection of portion within it; Eliminate the inhomogeneities of vibration wave, realize the even distribution of megasonic energy.When being sprayed with ultra-pure water or chemical liquids on the semiconductor, the uniform fluid wave that produces through mega sonic wave washes out the impurity on the semiconductor, and is pulled away via the mobile of liquid, thereby realizes semi-conductive cleaning, and less to semi-conductive destruction.
Description of drawings
Fig. 1 cleans the sectional structure chart of first embodiment for the utility model mega sonic wave;
Fig. 2 cleans the assembly drawing of first embodiment for the utility model mega sonic wave;
Fig. 3 cleans the structure chart of upper casing among the first embodiment for the utility model mega sonic wave;
Fig. 4 cleans the assembly drawing of coupling layer among the first embodiment for the utility model mega sonic wave;
Fig. 5 cleans lower house internal structure cutaway view among the first embodiment for the utility model mega sonic wave;
Fig. 6 is the application sketch map of the utility model.
Label among the figure: 1-upper shell; The 11-groove; The 2-sealing ring; The 3-cable connector; The 4-piezo-electric crystal; The 5-coupling piece; The 6-lower house; The impermeable cylinder hole array of 61-; The 7-connected nail; The 8-inlet suction port; The 81-air admission hole; The 9-exhaust joint; The 91-steam vent; 10-mega sonic wave cleaning head; The 20-silicon chip.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment, the specific embodiment of the utility model is described in further detail.Following examples are used to explain the utility model, but are not the scopes of restriction the utility model.
The described mega sonic wave cleaning head of the utility model comprises: transducer resonator, resonator are used to propagate the energy from transducer; This resonator has upper surface and lower surface, and upper surface is coupled to transducer, and resonator inside has the hole array of the vacuum of not penetrating upper surface, lower surface.
Shown in Fig. 1-2, the described mega sonic wave of the utility model cleans first embodiment and comprises: upper shell 1, coupling layer and lower house 6; In the present embodiment, transducer comprises upper shell 1 and coupling layer, and resonator is lower house 6; Shown in Fig. 1-3; Upper shell 1 (material is PVDF or other corrosion resistance height and intensity nonmetallic materials preferably) has cable connector 3; Can be connected with power amplifier through cable connector 3; And a side has air admission hole 81, steam vent 91 and inner one up and down respectively and has the boss that is uniformly distributed with groove 11, and air admission hole 81, steam vent 91 are respectively through inlet suction port 8 and exhaust joint 9 and external communications; Like Fig. 2 and shown in Figure 4, coupling layer comprises: piezo-electric crystal 4 (lead zirconate titanate of common used material for handling through hyperpolarization), coupling piece 5 and sealing ring 2; Piezo-electric crystal 4 through conducting resinl and coupling piece 5 tight bond together, wherein coupling piece 5 is processed by single medium or multimedium, its thickness is the integral multiple of 1/4 wavelength, and its upper surface can pass through screw line ball stube cable; Sealing ring 2 is located on the coupling piece 5, is used for the coupling place sealing of coupling piece 5 with upper shell 1 coupling; The upper surface and the coupling piece 5 of lower house 6 (but material is the better higher materials of machine additivity of mega sonic wave propagation performances such as quartz or ruby) are coupled, and are connected with upper shell through connected nail 7; Shown in Fig. 1 and 5; Adopt the hole array 61 (also can be honeycomb fashion or other geometry) of the impermeable column type vacuum of the molten quick-fried technology processing of laser in the inside of lower house 6; The area of hole array 61 is slightly larger than the effective area of piezo-electric crystal 4, and the length of cylindrical hole is 5: 1 to 10: 1 with the equivalent diameter ratio, and the mega sonic wave that imports into is fully eliminated through repeatedly reflecting its inhomogeneities; Simultaneously; Lower house is also unsuitable blocked up, and blocked up meeting makes effective energy decay before arriving clean surface of mega sonic wave too much, and cleaning performance reduces.The shape of this mega sonic wave cleaning head and coupling layer can be other geometries such as cylindrical, rectangle or ellipse.
Be connected with power amplifier through cable connector 3 piezo-electric crystal 4 is applied the alternating voltage that a frequency is 1MHz, piezo-electric crystal 4 produces vibration and forms mega sonic wave under the effect of alternating voltage, and mega sonic wave is propagated through coupling piece 5 and lower house 6.When being sprayed with ultra-pure water or chemical liquids on the silicon chip, the uniform fluid wave that produces through mega sonic wave washes out the impurity on the silicon chip, and is pulled away via the mobile of liquid, thereby realizes the cleaning to silicon chip, and destroys less to Si-gate.
In the course of the work; Cold gas by air admission hole 81 feedings; Interior ring through upper shell and groove 11 can make coupling layer got rid of by steam vent 91 by even cooling back, increase the life cycle of coupling layer, and the connection through connected nail; Annular boss can compress coupling layer, makes it tight with being connected of lower house 6.
The described mega sonic wave purging system of the utility model, this system also comprises mounting bracket.Upper shell 1 top has three screwed holes to link to each other with the mounting bracket (not shown) of system, and cleaning head 10 is fixing with corresponding mounting bracket spiral shell dress through the screwed hole on it, keeps certain distance (being generally 3mm) with silicon chip 20 surfaces, and is as shown in Figure 6.The relative motion of circumference not only can be carried out between cleaning head and the silicon chip and relative motion radially can be realized; Thereby can drive the mega sonic wave cleaning head along the silicon chip radial motion through support moves; Also can be that support is fixed; Cleaning head is fixedly connected with slide block on the support, drives multiple mode such as cleaning head motion through slide block movement and realizes relative motion.
The above only is the preferred implementation of the utility model; Should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the utility model know-why, can also make some improvement and replacement, these improvement and replacement also should be regarded as the protection domain of the utility model.
Claims (11)
1. a mega sonic wave cleaning head is characterized in that, comprising:
Transducer;
Resonator is used to propagate the energy from transducer; This resonator has upper surface and lower surface, and upper surface is coupled to transducer, and resonator inside has the hole array of the vacuum of not penetrating upper surface, lower surface.
2. mega sonic wave cleaning head as claimed in claim 1 is characterized in that, the geometry in the hole in the array of said hole includes but not limited to: column type, honeycomb fashion.
3. mega sonic wave cleaning head as claimed in claim 2 is characterized in that, the length in column type hole is 5: 1 to 10: 1 with the equivalent diameter ratio.
4. mega sonic wave cleaning head as claimed in claim 1 is characterized in that, said transducer comprises:
Upper shell has cable connector, can be connected with power amplifier through cable connector;
Coupling layer comprises piezo-electric crystal and coupling piece, and piezo-electric crystal closely is connected with the upper surface of coupling piece, and coupling layer is through coupling piece and upper shell coupling.
5. mega sonic wave cleaning head as claimed in claim 4 is characterized in that, said upper shell also has an air admission hole and a steam vent, and inner have one and have a plurality of annular boss that are uniformly distributed with groove upper shell inside is divided into inside loop and outside loop; The cold gas that is fed by air admission hole, interior ring and the groove through upper shell can make coupling layer got rid of by steam vent by even cooling back, thereby realization is to the even cooling of coupling layer.
6. mega sonic wave cleaning head as claimed in claim 4 is characterized in that said coupling layer also comprises sealing ring, is located on the coupling piece, is used for the coupling place sealing with coupling piece and upper shell coupling.
7. mega sonic wave cleaning head as claimed in claim 4 is characterized in that said coupling piece is processed by single medium or multimedium, and thickness is the integral multiple of 1/4 wavelength.
8. mega sonic wave cleaning head as claimed in claim 4 is characterized in that, being shaped as but being not limited to of this mega sonic wave cleaning head and said coupling layer: cylindrical, rectangle or ellipse.
9. mega sonic wave cleaning head as claimed in claim 4 is characterized in that, the area of the hole array in the said resonator is slightly larger than the effective area of piezo-electric crystal.
10. mega sonic wave cleaning head as claimed in claim 4 is characterized in that, said resonator is as lower house, with the lower surface coupling of coupling piece, and is connected with upper shell through connected nail.
11. a mega sonic wave purging system that has like any described mega sonic wave cleaning head among the claim 1-10 is characterized in that, also comprises mounting bracket, said mega sonic wave cleaning head is installed on the mounting bracket regularly or movably.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120383102 CN202290654U (en) | 2011-10-10 | 2011-10-10 | Mega sonic cleaning head and mega sonic cleaning system comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120383102 CN202290654U (en) | 2011-10-10 | 2011-10-10 | Mega sonic cleaning head and mega sonic cleaning system comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202290654U true CN202290654U (en) | 2012-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120383102 Withdrawn - After Issue CN202290654U (en) | 2011-10-10 | 2011-10-10 | Mega sonic cleaning head and mega sonic cleaning system comprising same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102327883A (en) * | 2011-10-10 | 2012-01-25 | 北京七星华创电子股份有限公司 | Megasonic cleaning head and megasonic cleaning system provided with same |
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
| CN106345721A (en) * | 2016-08-26 | 2017-01-25 | 北京七星华创电子股份有限公司 | Graphic wafer non-destructive ultrasonic / megapromatic cleaning device |
| CN107210208A (en) * | 2015-02-15 | 2017-09-26 | 盛美半导体设备（上海）有限公司 | The semicoductor device washing apparatus of Anti-fall and the process cavity with the device |
| CN109047163A (en) * | 2018-08-01 | 2018-12-21 | 南京泰明生物科技有限公司 | A kind of cleaning equipment for optical polish piece |
| CN109461678A (en) * | 2018-10-22 | 2019-03-12 | 深圳鑫安满金融服务有限公司 | Wafer speed detector in megasonic cleaning |
-
2011
- 2011-10-10 CN CN 201120383102 patent/CN202290654U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102327883A (en) * | 2011-10-10 | 2012-01-25 | 北京七星华创电子股份有限公司 | Megasonic cleaning head and megasonic cleaning system provided with same |
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
| CN107210208A (en) * | 2015-02-15 | 2017-09-26 | 盛美半导体设备（上海）有限公司 | The semicoductor device washing apparatus of Anti-fall and the process cavity with the device |
| CN107210208B (en) * | 2015-02-15 | 2020-05-19 | 盛美半导体设备(上海)股份有限公司 | Anti-falling semiconductor device cleaning device and process chamber with same |
| CN106345721A (en) * | 2016-08-26 | 2017-01-25 | 北京七星华创电子股份有限公司 | Graphic wafer non-destructive ultrasonic / megapromatic cleaning device |
| CN109047163A (en) * | 2018-08-01 | 2018-12-21 | 南京泰明生物科技有限公司 | A kind of cleaning equipment for optical polish piece |
| CN109461678A (en) * | 2018-10-22 | 2019-03-12 | 深圳鑫安满金融服务有限公司 | Wafer speed detector in megasonic cleaning |
| CN109461678B (en) * | 2018-10-22 | 2020-06-16 | 南京溧水高新创业投资管理有限公司 | Wafer rotating speed detection device in megasonic cleaning |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120704 Effective date of abandoning: 20131218 |
|
| RGAV | Abandon patent right to avoid regrant |