CN104646350A - Nondestructive cleaning device for graphic wafers - Google Patents
Nondestructive cleaning device for graphic wafers Download PDFInfo
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- CN104646350A CN104646350A CN201510076158.1A CN201510076158A CN104646350A CN 104646350 A CN104646350 A CN 104646350A CN 201510076158 A CN201510076158 A CN 201510076158A CN 104646350 A CN104646350 A CN 104646350A
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- cleaning
- cleaning device
- ultrasonic wave
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- quartz pushrod
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a nondestructive cleaning device for graphic wafers. The nondestructive cleaning device comprises a hollow shell which is arranged above the graphic wafers in a suspended manner, wherein an ultrasonic wave generation mechanism is arranged in the hollow interior of the shell, a selective ultrasonic energy removal mechanism is connected below the ultrasonic wave generation mechanism and comprises a plurality of equal-height arrays which are formed by quartz rods and are vertically arranged in a spaced manner, and the quartz rod arrays extend out from the lower side of the shell and are submerged into a cleaning chemicals solution above the graphic wafers. Energy of ultrasonic waves, of which the propagation direction is not vertical to the surfaces of the wafers, propagated from the ultrasonic wave generation mechanism is selectively removed, so that the energy of the ultrasonic waves is vertically propagated to the wafers and cannot cause damage to graphics of the surfaces of the graphic wafers during ultrasonic wave cleaning, thus, the nondestructive ultrasonic movable cleaning for the graphic wafers is realized, and the efficiency of removing contaminants from the surfaces of the wafers can be effectively increased.
Description
Technical field
The present invention relates to semiconductor integrated circuit processing cleaning equipment field, more specifically, relating to a kind of not damaged cleaning device for cleaning figure wafer.
Background technology
Along with the high speed development of semiconductor integrated circuit manufacturing technology, the pattern character size of IC chip has entered into the deep-submicron stage, and causes the characteristic size of the crucial pollutant (such as particle) of superfine circuit malfunction or damage on chip also greatly to reduce thereupon.
In the production and processing technology process of integrated circuit, semiconductor crystal wafer usually all can through multiple tracks processing steps such as such as thin film deposition, etching, polishings.And these processing steps just become the important place that pollutant produces.In order to keep the clean conditions of crystal column surface, eliminating the pollutant being deposited on crystal column surface in each processing step, cleaning treatment must be carried out to the wafer that subjected to after per pass processing step.Therefore, cleaning becomes processing step the most general in integrated circuit fabrication process, its object is to the contamination level effectively controlling each step, to realize the target of each processing step.
In order to effectively remove the pollutant of crystal column surface, when carrying out single-wafer wet clean process, wafer will be placed on the rotation platform (such as rotary chuck) of cleaning equipment, and rotates according to certain speed; Simultaneously to the chemical liquid of the surface spraying certain flow of wafer, crystal column surface is cleaned.
While reached removal pollutant object by cleaning, the most important thing is will ensure wafer, especially the not damaged of figure crystal column surface figure be cleaned.
Along with reducing of integrated circuit pattern characteristic size, the removal difficulty of the pollutant of crystal column surface smaller szie also continues to increase.A lot of Novel washing technology is applied on cleaning equipment.Wherein, most important one is ultrasonic cleaning technology.But, adopt ultrasonic cleaning technology while improve pollutant removal efficiency, also inevitably bring the damage problem for figure wafer.Mainly due to the direction of propagation and crystal column surface off plumb ultrasonic energy, the active force to figure crystal column surface figure transverse direction is greater than the adhesive force of surfacial pattern and wafer for this, causes the destruction of the effects on surface figure when Ultrasonic Cleaning.
Therefore, how to design a kind of novel figure wafer cleaning device, with can when Ultrasonic Cleaning, the elimination direction of propagation and crystal column surface off plumb ultrasonic energy are to the damaging influence of figure crystal column surface figure horizontal force, realize cleaning the not damaged of figure wafer, become an important topic of industry.
Summary of the invention
The object of the invention is to the above-mentioned defect overcoming prior art existence, there is provided a kind of structure simple, reproducible New Graphics wafer not damaged cleaning device, by rational structural design, the object optionally removing the ultrasonic energy beyond part vertical direction can be reached, realize cleaning the not damaged of figure wafer.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of figure wafer not damaged cleaning device, for carrying out the cleaning of ultrasonic wave liquid to the figure wafer be placed on cleaning equipment rotation platform, described cleaning device comprises one and is suspended at hollow housing above described figure wafer, the empty internal of described housing is provided with ultrasonic wave generating mechanism, a ultrasonic energy selective removal mechanism is connected below described ultrasonic wave generating mechanism, described ultrasonic energy selective removal mechanism comprises the contour array that the quartz pushrod that arranged by multiple down suction is formed, and described quartz pushrod array stretches out below described housing; The ultrasonic energy that is conducted after the selective removal of described quartz pushrod array from described ultrasonic wave generating mechanism, by the lower end vertical conduction of the described quartz pushrod array in the cleaning liquid that submerges on figure wafer to figure crystal column surface, move cleaning to carry out ultrasonic wave.
Preferably, described ultrasonic wave generating mechanism comprises the piezoelectric and Metallic coupling layer that connect setting up and down, described Metallic coupling layer lower end connects described ultrasonic energy selective removal mechanism, described piezoelectric, Metallic coupling layer to be connected with external power source by cable connector set by described housing and to form loop, described piezoelectric produces high-velocity deformation by receiving the signal of telecommunication, form sonic oscillation, and conduct to described Metallic coupling layer, the quartz pushrod array below it successively.
Preferably, described piezoelectric is connected by conducting resinl with Metallic coupling layer.
Preferably, described Metallic coupling layer is single metal level or complex metal layer.
Preferably, described ultrasonic energy selective removal mechanism comprises a quartzy guard circle, and described guard circle is arranged around described quartz pushrod array gap, and its lower end is higher than the lower end of described quartz pushrod array; Described ultrasonic energy selective removal mechanism upper end and described ultrasonic wave generating mechanism lower end are connected by conducting resinl or low-melting alloy or gold or silver.
Preferably, described quartz pushrod is solid cylinder.
Preferably, the diameter of described quartz pushrod is 0.5 ~ 5mm, is highly not less than 2mm.
Preferably, described housing connects swing arm, and described swing arm drives described cleaning device to carry out ultrasonic wave to figure wafer and moves cleaning.
Preferably, described housing sidepiece is provided with position and the adjustable cleaning liquid pipeline of quantity, for figure wafer cleaning showers liquid downwards.
Preferably, described housing is provided with refrigerating gas and imports and exports, and passes into refrigerating gas for empty inside wherein, to described ultrasonic wave generating mechanism cooling.
As can be seen from technique scheme, the present invention produces sonic oscillation by the ultrasonic wave generating mechanism arranged in the hollow housing of cleaning device based on piezoelectric, and the vertical quartz pushrod array submerged in wafer supernatant wash liquid by connecting below ultrasonic wave generating mechanism, selective removal is carried out in the direction of propagation and crystal column surface off plumb ultrasonic energy, make ultrasonic energy vertical conduction to wafer, ensure that in Ultrasonic Cleaning process, hyperacoustic energy can not cause the damage of figure crystal column surface figure, thus realize moving cleaning to the not damaged ultrasonic wave of figure wafer.Compare and only adopt nozzle by cleaning medicine liquid spray on the wafer surface or adopt conventional ultrasonic wave to assist the cleaning way of cleaning, cleaning device of the present invention is adopted to carry out ultrasonic assistant cleaning, effectively can improve the removal efficiency of wafer surface pollutant, and figure crystal column surface figure not damaged can be ensured.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of figure wafer not damaged cleaning device in one embodiment of the invention;
Fig. 2 is the three-dimensional structure diagram of the ultrasonic energy selective removal mechanism in one embodiment of the invention;
Fig. 3 is the sectional structure chart of the ultrasonic energy selective removal mechanism in one embodiment of the invention;
Fig. 4 is the contour structures side view of a kind of figure wafer not damaged cleaning device in one embodiment of the invention;
Fig. 5 is the contour structures top view of a kind of figure wafer not damaged cleaning device in one embodiment of the invention;
Fig. 6 is the contour structures upward view of a kind of figure wafer not damaged cleaning device in one embodiment of the invention;
Fig. 7 is the cleaning view of a kind of figure wafer of the present invention not damaged cleaning device.
1. upper shells in figure, 2. cable connector, 3. refrigerating gas is imported and exported, 4. clean liquid pipeline fixing support, 5. bolt hole, 6. seal washer one, 7. lower house, 8. preformed hole is installed, 9. ultrasonic energy selective removal mechanism, 10. quartz pushrod array, 11. housing set bolts, 12. bracket fixing bolts, 13. seal washers two, 14. Metallic coupling layer, 15. piezoelectrics, 16. binding posts, 17. guard circles, 18. cleaning liquids, 19. figure crystal column surface figure structures, 20. wafer substrate, 21. directions of propagation and crystal column surface direction off plumb ultrasonic wave, the ultrasonic wave that 22. directions of propagation are vertical with crystal column surface direction.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
It should be noted that, in following detailed description of the invention, when describing embodiments of the present invention in detail, in order to clearly represent structure of the present invention so that explanation, special to the structure in accompanying drawing not according to general scale, and carried out partial enlargement, distortion and simplify processes, therefore, should avoid being understood in this, as limitation of the invention.
In following the specific embodiment of the present invention, refer to Fig. 1, Fig. 1 is the structural representation of a kind of figure wafer not damaged cleaning device in one embodiment of the invention.As shown in Figure 1, a kind of figure wafer not damaged cleaning device of the present invention, for carrying out the cleaning of ultrasonic wave liquid to the figure wafer be placed on cleaning equipment rotation platform.Described cleaning device comprises one and is suspended at hollow housing above described figure wafer.As an Alternate embodiments, described housing can be processed into overall structure or dismountable Split type structure.In the present embodiment, described housing adopts the combining structure of two dismountable upper and lower casings 1,7.In order to ensure the housing seal performance after installing, between upper and lower casing 1,7 joint portion, seal washer 1 being also housed, can preventing exterior washings liquid from entering housing, and ensure the sealed environment in housing.
Please continue to refer to Fig. 1.A ultrasonic wave generating mechanism is provided with at the empty internal of described housing.A ultrasonic energy selective removal mechanism 9 is connected below ultrasonic wave generating mechanism.As an Alternate embodiments, described ultrasonic wave generating mechanism can select the supersonic generator based on piezoelectric 15.In the present embodiment, described ultrasonic wave generating mechanism comprises the piezoelectric 15 and Metallic coupling layer 14 that connect setting up and down.Described Metallic coupling layer 14 lower end connects described ultrasonic energy selective removal mechanism 9.Described piezoelectric 15, Metallic coupling layer 14 to be connected with external power source by the cable connector 2 set by upper shell 1 top and to form loop.The signal of telecommunication is directed into piezoelectric 15 by cable connector 2 by external power source, and forms loop by the binding post 16 of connection metal coupling layer 14.Described piezoelectric 15 produces high-velocity deformation by receiving the signal of telecommunication, form sonic oscillation, thus generation ultrasonic wave oscillating energy, and Metallic coupling layer 14 downwards conducts, ultrasonic wave oscillating energy is conducted to the ultrasonic energy selective removal mechanism 9 below it by Metallic coupling layer 14 more further.
As an embodiment, described Metallic coupling layer 14 can be single metal level, also can adopt the complex metal layer be made up of various metals, such as by different metal alloy formed multilayer laminated.The thickness of described Metallic coupling layer 14 should be integer extraordinarily 1/4 wavelength of the ultrasonic wave wavelength that piezoelectric 15 produces.Bond by conducting resinl between piezoelectric 15, Metallic coupling layer 14.
Please continue to refer to Fig. 1.Described ultrasonic energy selective removal mechanism 9 is arranged on below the Metallic coupling layer 14 in hollow housing 1,7, is specially lower house 7 inner side be arranged on below Metallic coupling layer 14.Described ultrasonic energy selective removal mechanism 9 comprises the contour array that the quartz pushrod 10 that arranged by multiple down suction is formed.Described quartz pushrod array 10 stretches out from the opening downward vertical of described lower house 7, and its lower end is lower than the lower surface of lower house 7.As an embodiment, described ultrasonic energy selective removal mechanism 9 also comprises a quartzy guard circle 17.Described guard circle 17 is arranged around described quartz pushrod array 10 gap, and its lower end, higher than the lower end of described quartz pushrod array 10, namely makes the lower end of described quartz pushrod array 10 expose from the lower end of described guard circle 17.The first half surface of described ultrasonic energy selective removal mechanism 9 is also provided with a groove, for holding the lower end of Metallic coupling layer 14, and pass through the metal connections such as the softer gold of conducting resinl or low-melting alloy or hardness or silver, and ensure there is no gap therebetween, connect well to be formed, smoothly ultrasonic energy can be conducted to the cleaning liquid of crystal column surface by quartz pushrod array 10 from Metallic coupling layer 14, realize effective cleaning of crystal column surface pollutant.
Refer to Fig. 2 and Fig. 3, Fig. 2 is the three-dimensional structure diagram of the ultrasonic energy selective removal mechanism 9 in one embodiment of the invention; Fig. 3 is the sectional structure chart of the ultrasonic energy selective removal mechanism 9 in one embodiment of the invention.As shown in Figures 2 and 3, as an embodiment, the monnolithic case of ultrasonic energy selective removal mechanism 9 is circular.Wherein, being positioned at outside ultrasonic energy selective removal mechanism 9 the latter half is the quartzy guard circle 17 of ring-type, is provided with circular quartz pushrod array 10 in the circular groove of quartzy guard circle 17.Quartz pushrod array 10 and guard circle 17 inwall keep gap; and the lower surface of guard circle 17 is stretched out in its lower end; can ensure that cleaning liquid is smoothly into and out of the internal clearance of quartz pushrod array 10, to take the pollutant departing from crystal column surface out of cleaning area, realizes the object of cleaning.Further, in the installation of ultrasonic energy selective removal mechanism 9, debugging, test process, can hand-held guard circle 17, avoid the quartz pushrod 10 that direct contact strength is more weak, cause the damage of quartz pushrod array 10.The first half surface of ultrasonic energy selective removal mechanism 9 is also provided with a groove, for holding the lower end of Metallic coupling layer 14, and pass through the metal connections such as the softer gold of conducting resinl or low-melting alloy or hardness or silver, stable good installed surface can be formed.As a preferred embodiment, described quartz pushrod 10 can be solid cylinder.Further, the diameter of described quartz pushrod 10 is 0.5 ~ 5mm, and it is highly not less than 2mm.Quartz pushrod 10 is vertical with the crystal column surface direction below it, can carry out corresponding configuration according to the difference of ultrasound working frequency.The quantity of quartz pushrod 10 also can configure with working ability according to actual needs accordingly.When making ultrasonic energy selective removal mechanism 9, quartzy guard circle 17 can be an entirety to the overall deep processing of the first half of ultrasonic energy selective removal mechanism 9, then, then installs quartz pushrod array 10 in the groove of quartzy guard circle 17.Also other quartzy process technologies known can be adopted to make meet the whole ultrasonic energy selective removal mechanism 9 of architectural feature of the present invention.
Referring again to Fig. 1.After ultrasonic energy selective removal mechanism 9 is loaded lower house 7, sealing filler ring 2 13 can be added, with the sealing property keeping enclosure interior good by the mating surface between itself and lower house 7.
Refer to Fig. 4 ~ Fig. 6, the contour structures side-looking of a kind of figure wafer not damaged cleaning device in its display one embodiment of the invention, to overlook and upward view, and please combine simultaneously and consult Fig. 1.One or more bolt hole 5 cleaning device and swing arm (scheming slightly) closely fixed can be provided with at the top of upper shell 1, further by set bolt, cleaning device can be connected with swing arm, drive cleaning device to carry out ultrasonic wave in the reciprocal circular motion of crystal column surface and move cleaning to realize swing arm, realize the uniform fold of crystal column surface ultrasonic energy.The signal of telecommunication is directed into piezoelectric by the cable connector 2 at upper shell 1 top by external power source.
Also combine please continue to refer to Fig. 4 ~ Fig. 6 and consult Fig. 1.Position and the adjustable cleaning liquid pipeline of quantity is provided with, for figure wafer cleaning showers liquid downwards at described housing sidepiece.As an embodiment, can at the installation preformed hole 8 of lower house 7 sidepiece process requirements quantity and correspondence position, and by bracket fixing bolt 12, cleaning liquid pipeline fixing support 4 will be fixed on lower house 7, thus liquid pipeline will be cleaned by fixed support 4 and coordinate with cleaning device and install.In use can adjust the fixed position of cleaning liquid pipeline according to actual conditions at any time, to meet various technological requirement, make operation more convenient.
Also combine please continue to refer to Fig. 4 ~ Fig. 6 and consult Fig. 1.Be provided with refrigerating gas at upper shell 1 and import and export 3, empty internal by refrigerating gas import housing 1,7 up and down passes into refrigerating gas, and discharged the refrigerating gas after exchange heat by refrigerating gas outlet, to cool equably the piezoelectric 15 of described ultrasonic wave generating mechanism and Metallic coupling layer 14.
Please continue to refer to Fig. 6.Be connected by housing set bolt 11 between upper shell 1 with lower house 7, and ensure that the refrigerating gas that housing 1,7 inside passes into can not be revealed by seal washer 1 and seal washer 2 13, with the cooling effect of piezoelectric in assurance device 15 and Metallic coupling layer 14.As a preferred embodiment, by quartz ring 9 around quartz pushrod array 10 can form a series of concentric circles be made up of quartz pushrod, to ensure the uniformity of its conducting ultrasonic energy.
The operation principle of figure wafer not damaged cleaning device of the present invention further illustrates by Fig. 7.As shown in Figure 7, after the piezoelectric 15 in Fig. 1 receives the signal of telecommunication, produce high-velocity deformation, form supersonic oscillations; Ultrasonic energy is conducted to downwards on the quartzy guard circle of ultrasonic energy selective removal mechanism 9 by Metallic coupling layer 14, and is transmitted to downwards further on quartz pushrod array 10.Ultrasonic energy is when quartz pushrod array 10 internal communication, direction of propagation ultrasonic wave 22 energy vertical with crystal column surface direction can arrive in the cleaning liquid 18 layers on wafer substrate 20 surface smoothly, drive cleaning liquid 18 to vibrate, realize the object removing pollutant in figure crystal column surface figure structure 19.And the direction of propagation and crystal column surface direction off plumb ultrasonic wave 21 energy can occur to reflect and reflect on the sidewall of quartz pushrod array 10, in this process, part energy is consumed with heat energy or the release of other form.After the repeatedly refraction on the sidewall at quartz pushrod array 10 and reflection, the direction of propagation and crystal column surface direction off plumb ultrasonic wave 21 energy are depleted gradually, realize an object for only ultrasonic wave 22 energy that the reservation direction of propagation is vertical with crystal column surface direction.Therefore, the ultrasonic energy is conducted from the piezoelectric 15 of ultrasonic wave generating mechanism, after the selective removal of quartz pushrod array 10, by the lower end of the quartz pushrod array 10 in the cleaning liquid 18 that submerges on figure wafer 20,19, can vertical conduction to figure crystal column surface, thus ultrasonic wave can be carried out move cleaning under the drive of swing arm.
At use figure wafer not damaged cleaning device of the present invention, when the cleaning of ultrasonic wave liquid is carried out to the figure wafer on cleaning equipment rotation platform, first, coaxial cable is used ultrasonic signal generator, power amplifier, impedance matching box (figure slightly) to be carried out being connected to form loop with the ultrasonic wave generating mechanism (piezoelectric 15 and Metallic coupling layer 14) in cleaning device housing 1,7 by cable connector 2.
Then, setting ultrasound working frequency and power, setting swing arm swinging track, setting cleaning medicinal liquid flow, temperature, determine cleaning liquid conduit positions, setting scavenging period, cooling gas flow, and the parameter such as gap between this cleaning device (quartz pushrod array 10 lower end) and wafer, to realize the uniform fold of ultrasonic energy at crystal column surface.
Then, cleaning menu is run.After piezoelectric 15 receives the signal of telecommunication, there is high frequency telescopic shape change, form supersonic oscillations.This oscillation energy conducts in ultrasonic energy selective removal mechanism 9 via Metallic coupling layer 14 downwards, and further by quartz pushrod array 10 lower end to conduction in cleaning liquid 18.
In the conductive process of ultrasonic energy, ultrasonic energy only remains the direction of propagation ultrasonic wave vertical with crystal column surface direction 22 energy after propagating via quartz pushrod array 10, and conducts to downwards further in cleaning liquid 18 layers.Now, in cleaning liquid 18, only there is the direction of propagation vertical with wafer substrate 20 surface, also namely parallel with figure crystal column surface figure structure 19 longitudinal direction vibrational energy.This energy drives cleaning liquid vibration, the process that the pollutant disengaging crystal column surface between quickening crystal column surface figure and outwards quality are transmitted, and improves the removal efficiency of crystal column surface pollutant, the shortening cleaning time.Meanwhile, after the propagation of quartz pushrod array 10, the direction of propagation and crystal column surface direction off plumb ultrasonic wave 21 energy are removed.Therefore, in cleaning liquid layer, there is not the cross shear for figure crystal column surface figure structure 19, effectively can protect the graphic structure 19 on wafer substrate 20 surface, thus realize cleaning the not damaged of figure wafer.
In sum, the present invention produces sonic oscillation by the ultrasonic wave generating mechanism arranged in the hollow housing of cleaning device based on piezoelectric 15, and the vertical quartz pushrod array 10 submerged in wafer supernatant wash liquid by connecting below ultrasonic wave generating mechanism, selective removal is carried out in the direction of propagation and crystal column surface off plumb ultrasonic energy, make ultrasonic energy vertical conduction to wafer, ensure that in Ultrasonic Cleaning process, hyperacoustic energy can not cause the damage of figure crystal column surface figure, thus realize moving cleaning to the not damaged ultrasonic wave of figure wafer.Compare and only adopt nozzle by cleaning medicine liquid spray on the wafer surface or adopt conventional ultrasonic wave to assist the cleaning way of cleaning, cleaning device of the present invention is adopted to carry out ultrasonic assistant cleaning, effectively can improve the removal efficiency of wafer surface pollutant, and figure crystal column surface figure not damaged can be ensured.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization description of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. a figure wafer not damaged cleaning device, for carrying out the cleaning of ultrasonic wave liquid to the figure wafer be placed on cleaning equipment rotation platform, it is characterized in that, described cleaning device comprises one and is suspended at hollow housing above described figure wafer, the empty internal of described housing is provided with ultrasonic wave generating mechanism, a ultrasonic energy selective removal mechanism is connected below described ultrasonic wave generating mechanism, described ultrasonic energy selective removal mechanism comprises the contour array that the quartz pushrod that arranged by multiple down suction is formed, described quartz pushrod array stretches out below described housing, the ultrasonic energy that is conducted after the selective removal of described quartz pushrod array from described ultrasonic wave generating mechanism, by the lower end vertical conduction of the described quartz pushrod array in the cleaning liquid that submerges on figure wafer to figure crystal column surface, move cleaning to carry out ultrasonic wave.
2. cleaning device according to claim 1, it is characterized in that, described ultrasonic wave generating mechanism comprises the piezoelectric and Metallic coupling layer that connect setting up and down, described Metallic coupling layer lower end connects described ultrasonic energy selective removal mechanism, described piezoelectric, Metallic coupling layer to be connected with external power source by cable connector set by described housing and to form loop, described piezoelectric produces high-velocity deformation by receiving the signal of telecommunication, form sonic oscillation, and conduct to described Metallic coupling layer, the quartz pushrod array below it successively.
3. cleaning device according to claim 2, is characterized in that, described piezoelectric is connected by conducting resinl with Metallic coupling layer.
4. the cleaning device according to Claims 2 or 3, is characterized in that, described Metallic coupling layer is single metal level or complex metal layer.
5. cleaning device according to claim 1, is characterized in that, described ultrasonic energy selective removal mechanism comprises a quartzy guard circle, and described guard circle is arranged around described quartz pushrod array gap, and its lower end is higher than the lower end of described quartz pushrod array; Described ultrasonic energy selective removal mechanism upper end and described ultrasonic wave generating mechanism lower end are connected by conducting resinl or low-melting alloy or gold or silver.
6. the cleaning device according to claim 1,2 or 5, is characterized in that, described quartz pushrod is solid cylinder.
7. cleaning device according to claim 6, is characterized in that, the diameter of described quartz pushrod is 0.5 ~ 5mm, is highly not less than 2mm.
8. cleaning device according to claim 1, is characterized in that, described housing connects swing arm, and described swing arm drives described cleaning device to carry out ultrasonic wave to figure wafer and moves cleaning.
9. cleaning device according to claim 1, is characterized in that, described housing sidepiece is provided with position and the adjustable cleaning liquid pipeline of quantity, for figure wafer cleaning showers liquid downwards.
10. cleaning device according to claim 1, is characterized in that, described housing is provided with refrigerating gas and imports and exports, and passes into refrigerating gas for empty inside wherein, to described ultrasonic wave generating mechanism cooling.
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| CN201510076158.1A CN104646350B (en) | 2015-02-12 | 2015-02-12 | A kind of figure wafer not damaged cleans device |
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| CN201510076158.1A CN104646350B (en) | 2015-02-12 | 2015-02-12 | A kind of figure wafer not damaged cleans device |
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| CN106238302A (en) * | 2016-08-26 | 2016-12-21 | 北京七星华创电子股份有限公司 | Ultrasound wave/the mega sonic wave of a kind of frequency dynamic change cleans device |
| CN106269452A (en) * | 2016-08-26 | 2017-01-04 | 北京七星华创电子股份有限公司 | A kind of combination type multi-frequency ultrasound wave/mega sonic wave cleans device |
| CN106328561A (en) * | 2016-08-26 | 2017-01-11 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device of graphic wafer capable of improving cleaning uniformity |
| CN106340477A (en) * | 2016-08-26 | 2017-01-18 | 北京七星华创电子股份有限公司 | Energy-uniformly-distributed ultrasonic/megasonic cleaning device |
| CN106345721A (en) * | 2016-08-26 | 2017-01-25 | 北京七星华创电子股份有限公司 | Graphic wafer non-destructive ultrasonic / megapromatic cleaning device |
| KR20180023857A (en) * | 2016-08-26 | 2018-03-07 | 베이징 세븐스타 일렉트로닉스 컴퍼니, 리미티드 | Ultrasonic/mega sonic cleaning device |
| CN110091011A (en) * | 2019-06-12 | 2019-08-06 | 东莞市闻誉实业有限公司 | Ultrasonic cleaning equipment and product processing device |
| US11554390B2 (en) | 2016-08-26 | 2023-01-17 | Beijing Sevenstar Electronics Co., Ltd. | Ultrasonic/megasonic cleaning device |
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