CN106340477B - A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device - Google Patents
A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device Download PDFInfo
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- CN106340477B CN106340477B CN201610741151.1A CN201610741151A CN106340477B CN 106340477 B CN106340477 B CN 106340477B CN 201610741151 A CN201610741151 A CN 201610741151A CN 106340477 B CN106340477 B CN 106340477B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning devices, ultrasonic wave/mega sonic wave generating mechanism and bottom quartz member are equipped in ontology, ultrasonic wave/mega sonic wave generating mechanism is equipped with piezoelectric material, bottom quartz member is equipped with quartzy microresonator array, quartzy microresonator array is stretched out from the opening of ontology lower end surface, selective removal can be carried out by ultrasonic wave/megasonic energy of the quartzy microresonator array to the direction of propagation and crystal column surface direction out of plumb, and the ontology acquired from spray arm rotating electric machine by ultrasonic wave/megasonic energy control unit according to real time position feedback unit is in the relative position information of crystal column surface, signal source output electric signal is adjusted, after piezoelectric material is converted, the any position of crystal column surface is set to obtain same ultrasonic wave/megasonic energy within the unit time , to realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed.
Description
Technical field
The present invention relates to semiconductor integrated circuit to process cleaning equipment field, more particularly, to one kind by making ultrasound
Wave/megasonic energy dynamic change realizes ultrasonic wave/mega sonic wave cleaning dress that uniformly not damaged cleaning is carried out to figure wafer
It sets.
Background technique
With the rapid development of semiconductor integrated circuit manufacturing technology, the pattern character size of IC chip has entered
To the deep-submicron stage, and cause the feature ruler of superfine circuit malfunction or the crucial pollutant (such as particle) of damage on chip
It is very little also to greatly reduce therewith.
In the production and processing process of integrated circuits, semiconductor crystal wafer usually all can be by such as film deposition, quarter
The multiple tracks processing steps such as erosion, polishing.And these processing steps just become the important place of pollutant generation.In order to keep wafer table
The clean conditions in face are eliminated and are deposited on the pollutant of crystal column surface in each processing step, it is necessary to being subjected to per pass technique
Wafer after step starts the cleaning processing.Therefore, cleaning process becomes most common processing step in integrated circuit fabrication process,
Its object is to efficiently control the contamination of each step level, to realize the target of each processing step.
In order to effectively remove the pollutant of crystal column surface, when carrying out single-wafer wet clean process, wafer will
It is placed on the rotating platform (such as rotary chuck) of cleaning equipment, and is rotated according to certain speed；Simultaneously to wafer
The chemical liquid of surface spraying certain flow, cleans crystal column surface.
By cleaning reach removal pollutant purpose while, it is most important that guarantee to wafer, especially for
The not damaged cleaning of figure crystal column surface figure.
With the diminution of integrated circuit pattern characteristic size, the removal difficulty of the smaller size of pollutant of crystal column surface is not yet
It is disconnected to increase.Many novel washing technologies have been applied on cleaning equipment.It is wherein, most important that one is ultrasonic wave/million sound
Wave cleaning technique.But also can not while improving pollutant removal efficiency using ultrasonic wave/mega sonic wave cleaning technique
Bring the damage problem for figure wafer with avoiding.This is mainly due to the ultrasounds of the direction of propagation and crystal column surface out of plumb
Wave/megasonic energy is greater than the adhesive force of surfacial pattern and wafer to the active force of figure crystal column surface figure transverse direction, causes
Destruction when ultrasonic wave/mega sonic wave cleaning to surfacial pattern.
Meanwhile existing ultrasonic wave/mega sonic wave cleaning implementation drives ultrasonic wave/million sound generally by spray arm
Wave cleaning device is moved back and forth in the circular arc that crystal column surface made the center of circle.Due in the rotary course of wafer, from crystal circle center
Linear velocity to crystal round fringes is gradually increased, if ultrasonic wave/mega sonic wave cleaning device in crystal column surface uniform motion, in crystalline substance
Round each position, the residence time of cleaning device have bigger difference, ultrasonic wave/million sound for causing each position of wafer to obtain
Wave energy has very big difference, so that the ultrasonic wave/megasonic energy obtained from crystal circle center to crystal round fringes is gradually reduced, this drop
The low particulate pollutant removal efficiency of crystal round fringes.
For above-mentioned phenomenon, there are two types of existing solutions, and a kind of (1) method is using ultrasonic wave/mega sonic wave is clear
Cleaning device is designed to fan shape, by making up each position linear speed using the piezoelectric material of different area from center to edge
The difference of degree；(2) another method is the motion profile by the way that spray arm is arranged, it is made to have different speed in different location
Degree, in the biggish region of wafer linear velocity, spray arm movement velocity is slower, extended residence time, makes up linear differential with this
Non-homogeneous cleaning problem caused by different.
But above two method all there is a problem of it is respective, method (1) production of piezoelectric material is required it is very high, for
300mm wafer and the following 450mm wafer that will be used cover the fan-shaped piezoelectric material needs from crystal circle center to edge and adopt
Spliced with muti-piece piezoelectric material, and need these piezoelectric materials that there is completely the same intrinsic frequency, cleaning device is caused to change
The manufacture difficulty and cost of energy device all greatly increase.Movement velocity control in method (2) due to spray arm is held by motor
Capable, it cannot achieve fine regulation, cause to be deteriorated for the compensation effect of different location linear velocity difference.
It is clear to improve therefore, it is necessary to be uniformly distributed using some new technological means control ultrasonic wave/megasonic energies
Wash the uniformity of effect.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of equally distributed ultrasound of energy is provided
Wave/mega sonic wave cleaning device can eliminate the direction of propagation and crystal column surface when carrying out ultrasonic wave/mega sonic wave cleaning to wafer
Ultrasonic wave/megasonic energy of out of plumb can make to press to the damaging influence of figure crystal column surface figure horizontal force
Ultrasonic wave/megasonic vibration energy that electric material generates is realized with the motion profile dynamic change of spray arm to figure wafer
Uniform not damaged cleaning.
To achieve the above object, technical scheme is as follows:
A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device, comprising:
Ontology, hollow inside be equipped with ultrasonic wave/mega sonic wave generating mechanism and bottom quartz member, the ultrasonic wave/
Mega sonic wave generating mechanism is equipped with piezoelectric material, described this external signal source of piezoelectric material connection, and the bottom quartz member is set
By the quartzy microresonator arrays being made of multiple vertical rodlike quartz constructions, the quartz microresonator array is from the ontology
The opening of lower end surface is stretched out；
Spray arm is driven by spray arm rotating electric machine, and ontology is driven back and forth to transport in the circular arc that crystal column surface made the center of circle
It is dynamic；
Real time position feedback unit, for acquiring unit turn angle or the unit turn time of spray arm rotating electric machine,
To obtain ontology in the relative position information of crystal column surface, and export feedback information；
Ultrasonic wave/megasonic energy control unit, is connected between signal source and piezoelectric material, for according to real-time position
Relative position information of the ontology in crystal column surface for setting feedback unit feedback is adjusted signal source output electric signal；
Wherein, the piezoelectric material receives electric signal and generates ultrasonic energy, conducts downwards through bottom quartz member, and pass through
After the selective removal of quartzy microresonator array, by submerging the quartzy microresonator in figure wafer supernatant wash liquid
The lower end surface vertical conduction of array drives cleaning medical fluid oscillation, to figure crystal column surface to carry out ultrasonic wave/mega sonic wave movement clearly
It washes, meanwhile, it is adjusted in real time according to ontology in the change in location of crystal column surface by the ultrasonic wave/megasonic energy control unit
It is whole by signal source export electric signal, whole wafer wide-ultra sound wave/million sound are realized in and the corresponding conversion through piezoelectric material
Wave energy is uniformly distributed.
Preferably, the ultrasonic wave/megasonic energy control unit includes a signal dutyfactor adjuster, the signal
Duty ratio adjuster is separately connected signal source, piezoelectric material and real time position feedback unit, passes through the real time position feedback list
The ontology that member drives spray arm gives signal dutyfactor adjuster, signal dutyfactor adjustment in the real time position feedback of crystal column surface
Device adjusts accordingly makes the duty ratio of electric signal from crystal circle center to crystal round fringes by being gradually reduced greatly, and is converted by piezoelectric material
For the ultrasonic wave with corresponding duty ratio/mega sonic wave pulse signal, so that any position of crystal column surface is obtained within the unit time
Same amount of ultrasonic wave/mega sonic wave pulse signal is obtained, to realize that whole wafer wide-ultra sound wave/megasonic energy is equal
Even distribution.
Preferably, the ultrasonic wave/megasonic energy control unit includes a power regulator, the power regulator
It is separately connected signal source, piezoelectric material and real time position feedback unit, by the real time position feedback unit by spray arm band
Dynamic ontology crystal column surface real time position feedback to power regulator, power regulator adjusts the power for making electric signal accordingly
It is gradually increased from crystal circle center to crystal round fringes by small, and ultrasonic wave/million with corresponding change is converted to by piezoelectric material
Acoustic power, so that any position of crystal column surface obtains same amount of ultrasonic wave/megasonic energy within the unit time, from
And it realizes whole wafer wide-ultra sound wave/megasonic energy and is uniformly distributed.
Preferably, the ontology specifically includes:
Upper and lower casing, connection form the hollow sealing chamber of ontology, and the seal chamber is formed in the lower end surface of lower case and opened
Mouthful；
Ultrasonic wave/mega sonic wave generating mechanism is set in seal chamber, piezoelectric material and coupling including being close to setting up and down
Bottom quartz member top is close in layer, the coupling layer lower part, the piezoelectric material, coupling layer and bottom quartz member by
Holddown spring and holddown spring guide post successively set between piezoelectric material are compressed at the top of upper housing, the coupling layer
There is gap between side, piezoelectric material side and top and sealing cavity wall, the upper housing is equipped with piezoelectric material binding post,
For external electric signal to be directed into piezoelectric material, and by connection coupling layer binding post forming circuit, to generate ultrasonic wave/million
Sonication energy；
Bottom quartz member is set in seal chamber, and the quartzy microresonator of ring-type for forming downwardly open groove including one is protected
The quartzy microresonator array that guard ring and a upper end are connected at bottom portion of groove, lower end is free end, the cyclic annular quartz
Coupling layer lower part is close on microresonator guard circle top, and side and seal chamber are located at the company of sealing between the inner wall of lower housing section
It connects, groove lower end is stretched out by the opening of lower case lower end surface, and the lower end surface of the quartz microresonator array is not higher than groove
Lower end surface.
Preferably, the upper housing is equipped with gas access and outlet, is connected to by sealing cavity wall and ultrasonic wave/mega sonic wave
The cooling chamber of generating mechanism outer wall composition, for being passed through cooling gas by gas access, to ultrasonic wave/mega sonic wave generating mechanism
It is cooled down, and is discharged by gas vent.
Preferably, the lower case side connection is equipped with gas atmosphere inlet and outlet, and the protective gas outlet is one
Enclose the stomata or slit that have a down dip, as being passed through protective gas by gas atmosphere inlet, and by protective gas outlet ejection, with
Figure crystal column surface forms a gas blanket.
Preferably, the upper housing is equipped with gas access, and the lower case side is equipped with gas vent, the gas vent
For stomata or slit that a circle has a down dip, the gas access and outlet are occurred by sealing cavity wall and ultrasonic wave/mega sonic wave
The cooling chamber of mechanism outer wall composition carries out ultrasonic wave/mega sonic wave generating mechanism for being passed through cooling gas by gas access
It is cooling, and while being discharged diagonally downward by gas vent, a gas blanket is formed in figure crystal column surface.
Preferably, the recess sidewall of the cyclic annular quartzy microresonator guard circle is equipped with one to several apertures, for making clearly
Wash liquid frees in and out the gap between quartzy microresonator array and figure crystal column surface.
Preferably, the shape of the quartzy rodlike quartz construction of microresonator array include circle, triangle, pentagon or
Rectangle, each rodlike quartz construction is distributed according to certain rules, or is distributed according to random fashion.
Preferably, the profile of the ontology and ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member is sector, three
Angular, pentagon either strip.
The invention has the following advantages that
1) it by rationally designing the quartzy microresonator array structure of bottom quartz member, realizes and removes on other directions
Ultrasonic wave/megasonic energy only retains the direction of propagation ultrasonic wave/megasonic energy mesh vertical with crystal column surface to be cleaned
, guarantee in ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause figure crystal column surface figure
Damage；
2) in ultrasonic wave/mega sonic wave cleaning process, pass through the setting signal duty ratio between signal source and piezoelectric material
Adjuster or power regulator, and real time position feedback unit is connected, it can be existed according to the ontology that real time position feedback unit is fed back
The real-time position information of crystal column surface, adjusts the duty ratio or power of electric signal, and is converted by piezoelectric material, and wafer is made
Any position on surface obtains same amount of ultrasonic wave/mega sonic wave pulse signal or ultrasonic wave/mega sonic wave within the unit time
Energy improves the uniform of cleaning effect to realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed
Property；
3) shape of the rodlike quartz construction of quartzy microresonator array may include round and some other shapes, such as
Triangle, pentagon, rectangle etc.；Meanwhile the arrangement of each rodlike quartz construction can be distributed according to certain rules, it can also be with
Completely random distribution forms the higher region of energy in specific region when to prevent locking apparatus with spray arm swing, makes ultrasonic wave/million
The Energy distribution of sound wave is more uniform；
4) it is provided with aperture on cyclic annular quartzy microresonator guard circle, can makes to clean the quartzy microresonator of medical fluid free entry and exit
Gap between array and figure crystal column surface improves cleaning medicine to eliminate the surface tension effects of crystal column surface cleaning medical fluid
The replacement result of liquid accelerates the exchange process of new, old medical fluid, improves the effect of cleaning；
5) device may be designed to fan-shaped, triangle, and the covering surface of device can be improved in pentagon either strip
Product, so as to improve the cleaning efficiency of device；
6) during cleaning process, a gas blanket is formed above wafer using protective gas, wafer can be made
With oxygen-barrier, crystal column surface silicon materials is prevented to be oxidized；In the drying process, since wafer is completely in covering for protective gas
Under lid, when wafer high speed rotation, the drying of whole wafer range can be better achieved, prevent the generation of washmarking defect,
The drying of crystal round fringes can be better achieved.
Detailed description of the invention
Fig. 1 is that the equally distributed ultrasonic wave of one of one embodiment of the invention energy/mega sonic wave cleaning device structure is shown
It is intended to；
Fig. 2 is the structure sectional view of the bottom quartz member in one embodiment of the invention；
Fig. 3 is the schematic perspective view of the bottom Fig. 2 quartz member；
Fig. 4 is the outline structural diagram of Fig. 1 ontology；
Fig. 5 is a kind of mated condition schematic diagram of ontology and spray arm of the invention；
Fig. 6 is ultrasonic wave/megasonic energy control unit control principle drawing in one embodiment of the invention；
Fig. 7 is ultrasonic wave/megasonic energy control unit control principle drawing in another embodiment of the present invention；
Fig. 8 is that the principle of quartzy microresonator array selective removal portion of ultrasonic sound wave/megasonic energy of the invention is shown
It is intended to；
Fig. 9 is equally distributed ultrasonic wave/million of energy that one of one embodiment of the invention has gas shield effect
Sound wave cleaning device body construction cross-sectional view；
Figure 10 is the outline structural diagram of Fig. 9；
Figure 11 be one of another embodiment of the present invention have gas shield effect the equally distributed ultrasonic wave of energy/
Mega sonic wave cleaning device body construction cross-sectional view；
Figure 12 is the outline structural diagram of Figure 11；
Figure 13 is the quartzy microresonator guard circle structural schematic diagram of ring-type for being equipped with aperture in one embodiment of the invention；
Figure 14 is the rodlike quartz construction schematic diagram of triangle of regular distribution in one embodiment of the invention；
Figure 15 is the rodlike quartz construction schematic diagram of rectangle of random distribution in one embodiment of the invention；
Figure 16 is the quartzy microresonator array schematic diagram of sector in one embodiment of the invention；
Figure 17 is the rectangle quartz microresonator array schematic diagram in one embodiment of the invention.
I, ontology in figure, 10. quartzy microresonator arrays, 11. quartzy microresonator guard circles, 11 ' quartz microresonators
Guard circle aperture, 12. bottom quartz members, 13. gaskets, 14. piezoelectric materials, 15. upper housings, the fixed spiral shell of 16. spray arms
Keyhole, 17. holddown spring guide posts, 18. binding posts, 19. holddown springs, 20. coupling layers, 21. sealing rings, 22. lower cases,
23. real time position feedback unit, 24. ultrasonic waves/megasonic energy control unit, 24-1. signal dutyfactor adjuster, 24-2.
Power regulator, 25. signal sources, 26. cooling gas inlets, the outlet of 27/27 ' cooling gas, 28. spray arms, 29. fixed branch
Frame, 30. cleaning medical fluids, 31. wafers, 31 ' crystal column surface figure structures, 32. gas atmosphere inlets, the outlet of 33. protective gas,
34. upper-lower casing fixation hole, ultrasonic wave/megasonic energy of the direction of propagation A. and crystal column surface out of plumb, the direction of propagation B. with
Vertical ultrasonic wave/the megasonic energy of crystal column surface.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, first referring to Fig. 1, Fig. 1 is one of one embodiment of the invention
The equally distributed ultrasonic wave of energy/mega sonic wave cleaning device structural schematic diagram.As shown in Figure 1, a kind of energy of the invention is uniform
The ultrasonic wave of distribution/mega sonic wave cleaning device, above the removable figure wafer being suspended in cleaning equipment, for being placed on
Figure wafer on rotating platform carries out ultrasonic wave/mega sonic wave medical fluid cleaning.Described device includes ontology I, ultrasonic wave/mega sonic wave
Power control unit 24, real time position feedback unit 23 and spray arm 28 (not showing, please refer to Fig. 5).
Ontology I is hollow structure, and inside is equipped with ultrasonic wave/mega sonic wave generating mechanism 14,20 and bottom quartz member 12.Institute
Ultrasonic wave/mega sonic wave generating mechanism is stated equipped with piezoelectric material 14, described this external signal source 25 of piezoelectric material connection.The bottom
Portion's quartz member 12 is equipped with the quartzy microresonator array 10 being made of multiple vertical rodlike quartz constructions, the micro- resonance of quartz
Ontology is stretched out from the opening that the ontology lower end surface has in the lower end surface of chamber array 10.
An ontology I and spray arm is connect, and spray arm is equipped with spray arm rotating electric machine (figure omits).Spray arm rotating electric machine drives
Dynamic spray arm rotation carries out ultrasonic wave/million to wafer so that the circular arc for driving ontology to make the center of circle in crystal column surface is moved back and forth
The mobile cleaning of sound wave.
Ultrasonic wave/megasonic energy control unit 24 is connected between signal source 25 and piezoelectric material 14, for example, ultrasonic
Wave/megasonic energy control unit 24 is mountable outside ontology I, and one end connecting signal source 25, and the other end passes through binding post 18
Connect ultrasonic wave/mega sonic wave generating mechanism piezoelectric material 14 in ontology.The electric signal that signal source 25 exports passes through ultrasonic wave/million
Acoustic wave energy control unit 24 imports ultrasonic wave/mega sonic wave generating mechanism piezoelectric material 14.
Ultrasonic wave/megasonic energy control unit 24 is also connected with real time position feedback unit 23 simultaneously；Real time position feedback
Unit 23 connects spray arm rotating electric machine (not shown) by connection again.It can be acquired and be sprayed by real time position feedback unit 23
The unit turn angle of arm rotating electric machine or unit turn time, to obtain ontology I in the relative position information of crystal column surface, and
Feedback information is exported to ultrasonic wave/megasonic energy control unit 24.Ultrasonic wave/megasonic energy control unit 24 is according to real-time
The ontology I that position feedback unit 23 is fed back carries out the output electric signal of signal source 25 in the relative position information of crystal column surface
Corresponding adjustment (being detailed in subsequent explanation).
Please refer to Fig. 1.Ontology I specifically may include upper and lower casing 15,22, and the ultrasound being mounted in upper and lower shell body
Wave/mega sonic wave generating mechanism 14,20 and bottom quartz member 12.Upper and lower casing 14,20 can be used removably and be connected
It connects, such as upper and lower casing can be fixedly connected by bolt, and be formed in the interior thereof seal chamber upon connection.It is described close
Sealing chamber has opening (i.e. the opening of ontology lower end surface) in the lower end surface of lower case.In order to guarantee that the upper and lower casing after installation is close
Sealing property can be equipped with gasket 13 between the engaging portion of upper and lower casing.
Please refer to Fig. 1.A ultrasonic wave/mega sonic wave generating mechanism 14 and 20 is equipped with inside seal chamber.Ultrasonic wave/million sound
There is gap, so as to form a cooling chamber between the top and side of wave generating mechanism and the inner wall of seal chamber.In ultrasound
Wave/mega sonic wave generating mechanism lower section is equipped with a bottom quartz member 12 in a manner of fitting closely.Bottom quartz member packet
Include the cyclic annular quartzy microresonator guard circle 11 and a quartzy microresonator array 10 for being vertically connected with setting.Cyclic annular quartz
Microresonator guard circle 11 has the groove structure for being formed down opening, and quartzy microresonator array 10 is mounted on groove structure
It is interior；The upper end connecting groove bottom of quartzy microresonator array 10, lower end is free end；Quartzy microresonator array 10 is by multiple
Vertical rodlike quartz construction forms a microresonator array.
By the top and ultrasonic wave/mega sonic wave of cyclic annular quartzy microresonator guard circle 11 machine occurs for bottom quartz member 12
The bottom of structure 14 and 20 forms and fits closely connection；Also, bottom quartz member 12 passes through cyclic annular quartzy microresonator guard circle
11 side and the sealing cavity wall of 22 part of lower case carry out step installation and cooperate.Similarly, after in order to guarantee installation
Sealing performance between lower case 22 and bottom quartz member 12, in lower case 22 and cyclic annular quartzy microresonator guard circle 11
Sealing ring 21 can be housed between engaging portion.
Please refer to Fig. 1.The groove lower end of cyclic annular quartz microresonator guard circle 11 is free end, by 22 lower end of lower case
The opening in face extends downwardly lower case.The lower end surface of the quartz microresonator array 10 is not higher than cyclic annular quartzy microresonator
The lower end surface of the lower end surface of guard circle groove, i.e., the described quartzy microresonator array 10 can be micro- total less than or equal to cyclic annular quartz
The groove lower end surface of vibration chamber guard circle 11.A kind of quartzy microresonator array lower end surface is illustrated as lower than cyclic annular quartzy microresonator
The situation of guard circle groove lower end surface.
Fig. 2 and Fig. 3 are please referred to, Fig. 2 is the structure sectional view of the bottom quartz member in one embodiment of the invention, and Fig. 3 is
The schematic perspective view of the bottom Fig. 2 quartz member.As shown in Figures 2 and 3, in bottom quartz member 12, quartz is micro- total
The lower end surface height having the same of each rodlike quartz construction of vibration chamber array 10, and below cyclic annular quartzy microresonator is protected
The groove lower end surface of guard ring 11.Each rodlike quartz construction can form equally distributed quartzy microresonator array.
In the installation, debugging, test process of bottom quartz member 12, cyclic annular quartzy microresonator protection can be held
Circle, avoids direct contact with the weaker rodlike quartz construction of intensity, causes the damage of rodlike quartz construction.Bottom quartz member bottom surface
On quartzy microresonator array be vertically arranged by with crystal column surface direction, the size of rodlike quartz construction can be diameter in 0.5-
Between 5mm, length can carry out corresponding configuration according to ultrasonic wave/mega sonic wave working frequency is different in 2mm or more.Rodlike quartz
The quantity and distribution density of structure can also be configured with working ability accordingly according to actual needs.
Please continue to refer to Fig. 1.Ultrasonic wave/million based on piezoelectric material can be selected in the ultrasonic wave/mega sonic wave generating mechanism
Sonic generator.In the present embodiment, the ultrasonic wave/mega sonic wave generating mechanism may include the upper and lower piezoelectric material for being close to connection
14 and coupling layer 20.Metal production can be used in coupling layer.The lower part of the coupling layer 20 fits closely cyclic annular quartzy microresonator
The top of guard circle 11.To guarantee connection effect and being protected to neutrality, the lower part of the coupling layer 20 and cyclic annular quartzy microresonator
The flute profile connection type of diagram can be used between the top of guard ring 11.The side of the coupling layer 20, piezoelectric material 14 side
There is certain gap between top and the inner wall of seal chamber, in favor of carrying out gas cooling.
Several holddown springs 19 and holddown spring guiding are sequentially arranged between 15 inner top of upper housing and piezoelectric material 14
Column 17, under the guiding role of holddown spring guide post 17, holddown spring 19 is in impaction state in the vertical direction, and will pressure
Electric material 14, coupling layer 20 are pressed downward, be allowed to the quartzy microresonator guard circle 11 of the ring-type of lower part and device lower case 22 it
Between without gap, convenient for the effective transmission of ultrasonic wave/megasonic energy.
The upper housing is equipped with piezoelectric material binding post 18, and the electric signal for generating outside source 25 is directed into pressure
Electric material 14, and by connection coupling layer binding post (not shown) forming circuit, to generate ultrasonic wave/mega sonic wave oscillation energy.
Piezoelectric material 14 receives the stretching vibration that high speed is generated after electric signal, forms the oscillation of ultrasonic wave/mega sonic wave, and by oscillation energy
Downwards in conduction to coupling layer 20.
The coupling layer 20 is made of single metal or various metals, with a thickness of ultrasonic wave caused by piezoelectric material/
The integer of mega sonic wave wavelength extraordinarily 1/4 wavelength.Coupling layer 20 can be bonded by conducting resinl and piezoelectric material 14.Piezoelectric material and coupling
Corrosion-resistant finishes can be coated by closing layer surface, prevent cleaning medical fluid from generating corrosion to coupling layer metal and piezoelectric material.
It can be closed by conducting resinl or low melting point between the coupling layer 20 and cyclic annular quartzy microresonator guard circle 11
The sheet metals such as golden or softer hardness gold or silver connection, to guarantee not having gap therebetween.
Referring to Fig. 4, Fig. 4 is the outline structural diagram of Fig. 1 ontology.As shown in figure 4, upper housing 15 is equipped with cooling gas
Entrance 26 and outlet 27, are connected to the cooling chamber being made of sealing cavity wall and ultrasonic wave/mega sonic wave generating mechanism outer wall.It can lead to
Supercooling gas access 26 introduces cooling gas by device upper housing 15, device lower case 22, coupling layer 20 and bottom stone
The device internal cavities that English component 12 forms, after completion is exchanged with the heat of piezoelectric material 14 and coupling layer 20, by cooling gas
27 discharge of outlet, effectively cool down to ultrasonic wave/mega sonic wave generating mechanism piezoelectric material and coupling layer to realize.
Referring to Fig. 5, Fig. 5 is a kind of mated condition schematic diagram of ontology and spray arm of the invention.As shown in figure 5, can
The upper housing 15 of apparatus of the present invention ontology is passed through fixed bracket 29 to be attached with spray arm 28, spray arm lower end connection spray
Arm rotating electric machine (figure omits) drives ontology to make in crystal column surface reciprocal to realize the driving spray arm rotation of spray arm rotating electric machine
Circular motion carries out the mobile cleaning of ultrasonic wave/mega sonic wave, and realizes crystal column surface ultrasonic wave/megasonic energy uniform fold.
Referring to Fig. 6, Fig. 6 is ultrasonic wave/megasonic energy control unit control principle drawing in one embodiment of the invention.
As shown in fig. 6, ultrasonic wave/megasonic energy control unit is provided with a signal dutyfactor adjuster 24-1, the signal is accounted for
The one end of sky than adjuster 24-1 is connected to piezoelectric material 14 by piezoelectric material binding post 18, and one end is connect with signal source 25,
And it is connect there are also one end with real time position feedback unit 23.
During cleaning process, the ontology for being driven spray arm by the real time position feedback unit is in crystal column surface
Real time position feedback give signal dutyfactor adjuster.Signal dutyfactor adjuster is according to location information in the pulse of electric signal
Be added a certain number of vacancy, change electric signal duty ratio, and by adjusting make the duty ratio of electric signal from crystal circle center to crystalline substance
The edge of the circle is by being gradually reduced greatly, so that the mega sonic wave after being converted by piezoelectric material also has corresponding duty ratio.
In the center of wafer, the linear velocity of wafer is smaller, and duty ratio is with regard to larger；In the marginal position of wafer, wafer
Linear velocity it is larger, duty ratio is then smaller.Any position of crystal column surface can be made to obtain same number within the unit time in this way
The ultrasonic wave of amount/mega sonic wave pulse signal, thus realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed,
Improve the uniformity of cleaning effect.
Again referring to Fig. 7, Fig. 7 is ultrasonic wave/megasonic energy control unit control original in another embodiment of the present invention
Reason figure.As shown in fig. 7, ultrasonic wave/megasonic energy control unit is provided with a power adjustment unlike Fig. 6 example
One end of device 24-2, the power regulator 24-2 are connected to piezoelectric material 14, one end connection by piezoelectric material binding post 18
Signal source 25, and connect there are also one end with real time position feedback unit 23.
During cleaning process, the ontology for being driven spray arm by the real time position feedback unit is in crystal column surface
Real time position feedback to power regulator, power regulator adjusts the power of electric signal according to location information, makes electric signal
Power is gradually increased from crystal circle center to crystal round fringes by small, to make ultrasonic wave/mega sonic wave after piezoelectric material is converted
Corresponding change also occurs for power.
In the center of wafer, the linear velocity of wafer is smaller, and power is also smaller；In the marginal position of wafer, wafer
Linear velocity is larger, and power is also larger.Any position of crystal column surface can in this way obtained within the unit time same amount of
Ultrasonic wave/megasonic energy improves cleaning to realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed
The uniformity of effect.
Apparatus of the present invention are selectively removed portion of ultrasonic sound wave/megasonic energy, working principle can by Fig. 8 come into
One step explanation.As shown in figure 8, ultrasonic wave/mega sonic wave oscillation is generated after piezoelectric material 14 receives electric signal, ultrasonic wave/
Megasonic energy is conducted to bottom quartz member 12 downwards by coupling layer 20, and further propagates to the micro- resonance of quartz downwards
On chamber array 10.For ultrasonic wave/megasonic energy in quartzy microresonator internal communication, the direction of propagation is vertical with crystal column surface
Ultrasonic wave/megasonic energy B can be reached smoothly in the cleaning medical fluid layer 30 on 31 surface of wafer, drive cleaning medical fluid oscillation, real
Now remove the purpose of pollutant.And ultrasonic wave/megasonic energy A of the direction of propagation and crystal column surface out of plumb can be micro- total in quartz
Refraction and reflection occurs on the side wall of vibration chamber 10, in this process, part energy is consumed to thermal energy or other forms are released
It puts.After multiple refraction and reflection on the side wall in quartzy microresonator, the direction of propagation is super with crystal column surface out of plumb
Sound wave/megasonic energy A is gradually depleted, and is realized and is only retained the direction of propagation ultrasonic wave/mega sonic wave energy vertical with crystal column surface
The purpose of B is measured, to can guarantee in ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause figure
The damage of crystal column surface figure structure 31 '.
Therefore, the ultrasonic wave/megasonic energy transferred out from ultrasonic wave/mega sonic wave generating mechanism piezoelectric material, through stone
After the selective removal of English microresonator, by submerging the lower end for cleaning the rodlike quartz construction in medical fluid on figure wafer,
Can vertical conduction to figure crystal column surface, to carry out the mobile cleaning of ultrasonic wave/mega sonic wave under the drive of spray arm.Together
When, the ultrasonic wave/megasonic energy control unit, in the change in location of crystal column surface, adjusts the letter passed through according to ontology in real time
Number source exports electric signal, and the corresponding conversion through piezoelectric material, realizes that whole wafer wide-ultra sound wave/megasonic energy is equal
Even distribution.
Process corresponding with the equally distributed ultrasonic wave of above-mentioned energy/mega sonic wave cleaning device is as follows:
Connection ultrasonic wave/mega sonic wave signal generator, power amplifier, the external circuits such as impedance matching box are clear with this first
Cleaning device sets ultrasonic wave/mega sonic wave working frequency and power；Between the signal acquisition time for setting real time position feedback unit
Every；Set ultrasonic wave/megasonic energy control unit signal dutyfactor or power adjustment amplitude.
Then spray arm swinging track is set, medicinal liquid flow, temperature are cleaned, cleans medical fluid conduit positions, scavenging period is cold
But the parameters such as gap of throughput and the cleaning device and wafer realize ultrasonic wave/megasonic energy in the equal of crystal column surface
Even covering.
Then operation cleaning menu after piezoelectric material receives electric signal, occurs high frequency telescopic deformation, forms ultrasound
Wave/mega sonic wave oscillation；The oscillation energy is conducted via coupling layer to bottom of device quartz member downwards；Ultrasonic wave/million sound
After wave energy is propagated via quartzy microresonator, the direction of propagation ultrasonic wave/mega sonic wave vertical with crystal column surface is only remained
Energy, and further in conduction downwards to cleaning medical fluid layer.
At this point, it is vertical with crystal column surface to only exist the direction of propagation in cleaning medical fluid, namely longitudinal with crystal column surface figure
The parallel vibrational energy in direction.The energy drives cleaning liquid vibration, and the pollutant accelerated between crystal column surface figure is detached from crystalline substance
Circular surfaces and the process of outside mass transfer improve the removal efficiency of crystal column surface pollutant, shorten the cleaning process time.Through
It crosses on bottom of device quartz member after the propagation of quartzy microresonator array, the ultrasound of the direction of propagation and crystal column surface out of plumb
Wave/megasonic energy is removed.
Meanwhile real time position feedback unit is at regular intervals or spray arm rotating electric machine often rotates by a certain angle, it will
Ontology present position information is uploaded to ultrasonic wave/megasonic energy control unit, ultrasonic wave/megasonic energy control unit according to
Ontology adjusts the duty ratio or power of electric signal, any position of crystal column surface is made to exist in the real-time position information of crystal column surface
Same amount of ultrasonic wave/mega sonic wave pulse signal or power are obtained in unit time, and are converted to and have by piezoelectric material
Corresponding ultrasonic wave/megasonic energy of duty ratio or ultrasonic wave/mega sonic wave power of corresponding change, to realize whole wafer model
Being uniformly distributed for interior ultrasonic wave/megasonic energy is enclosed, the uniformity of cleaning effect is improved.
Current monolithic cleaning equipment mainly by the surface high-speed rotating wafer (wafer) jet cleaning liquid come
Achieve the purpose that cleaning.In the process of cleaning, wafer is by the multiple hold assemblies clamping being mounted on round chuck main body, folder
Holding component holds wafer to carry out high speed rotation.Meanwhile in the top of wafer, cleaning equipment is additionally provided with spray arm, can pass through
Spray arm is to crystal column surface jet cleaning medium.
In chemical liquid and ultrapure water cleaning process, crystal column surface material is easier to be damaged or occur some chemistry
Reaction.For example, first passing through spray arm in DHF cleaning process to crystal column surface and spraying DHF, by the autoxidation of crystal column surface
Layer erodes completely；Then injection ultrapure water is rinsed crystal column surface, by the residual liquor and reaction product of crystal column surface
It washes out；Finally, passing through injection N again2Crystal column surface is dried and completes entire technical process.In this process, wafer table
The naked silicon materials in face are very easy to react with the oxygen in processing chamber, generate silica, lead to crystal column surface material
It changes, subsequent technique is impacted.Therefore, it is necessary in technical process, to the oxygen content in entire chamber into
Row control.
On the other hand, in wafer N2In drying process, if technology controlling and process obtain it is bad, can crystal column surface occur
Watermark (washmarking) defect.The dominant mechanism that Watermark is formed is in N2In drying process, because drying is incomplete and residual
It is remaining that the SiO for reacting and generating with oxygen has been incorporated in the water of crystal column surface2, and it is further formed H2SiO3Or HSiO3Precipitating.
After the water volatilization of crystal column surface, these precipitatings form the washmarking of flat condition.In addition, in above-mentioned cleaning process, it is also frequent
Occur having the unseasoned thorough phenomenon of drop on crystal round fringes rib, this also results in wafer cleaning quality certain influence.
Therefore, it is necessary to optimize to drying process, being completely dried for whole wafer range is realized.
Further improvement of the present invention point is the function that gas shield is realized on the basis of the not damaged cleaning of figure wafer.
In technical process, form a gas blanket above wafer using protective gas, protective gas can be nitrogen or
The inert gases such as argon gas.The advantage that be: (1) in technical process, make wafer and oxygen-barrier, prevent crystal column surface silicon material
Material is oxidized；It (2) in the drying process,, can when wafer high speed rotation since wafer is completely under the covering of protective gas
Preferably to realize the drying of whole wafer range, the generation of washmarking defect is prevented, can also preferably realize crystal round fringes
It is dry.
The mode that the realization of gas protecting function can take following two different.
Fig. 9 and Figure 10 are please referred to, Fig. 9 is that one of one embodiment of the invention has the energy of gas shield effect uniform
The ultrasonic wave of distribution/mega sonic wave cleaning device body construction cross-sectional view；Figure 10 is the outline structural diagram of Fig. 9.Such as Fig. 9 and figure
Shown in 10, the cooling gas of the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device ontology itself can be used as protection gas
Body.Shell 15 is equipped with cooling gas inlet 26, the co-portal as cooling gas and protective gas on the body；In lower case
22 side wall is at bottom surface, the slit that has a down dip of one ring shape of processing, or is also possible to a circle stomata, as cooling gas and
The conjoint outlet 27 ' of protective gas.Cooling gas enters body interior by gas access 26, i.e., by sealing cavity wall and ultrasound
Wave/mega sonic wave generating mechanism outer wall composition cooling chamber after completing to the cooling of piezoelectric material and coupling layer, goes out from a circle gas
Mouth 27 ' sprays, while forming a gas blanket in crystal column surface, and the oxygen controlled in cleaning process process middle chamber contains
Amount, prevents wafer from reacting with the oxygen in air.In drying process, cooling gas is stayed open, and plays injection protection
Gas realizes the dry purpose of crystal column surface, can replace the spray arm of the individual jet drying gas of tradition, make cleaning equipment chamber
Cell structure is simplified.When dry, the cleaning device ontology with gas shield can be fixed on crystal circle center's injection, can also be
It is sprayed in crystal column surface along arc swing under the drive of spray arm.
Figure 11 and Figure 12 are please referred to, Figure 11 is the energy that one of another embodiment of the present invention has gas shield effect
Equally distributed ultrasonic wave/mega sonic wave cleaning device body construction cross-sectional view；Figure 12 is the outline structural diagram of Figure 11.Such as figure
Shown in 11 and Figure 12, another implementation of gas protecting function is passed through using an individual gas atmosphere inlet 32
Protective gas.Equally, the slit either one that an annular has a down dip is processed close to the position of bottom surface in the side wall of ontology lower case
Enclose stomata, the outlet 33 as protective gas.It is passed through protective gas by gas atmosphere inlet 32, and by protective gas outlet 33
It sprays, a gas blanket can be formed in crystal column surface, to control the oxygen content in chamber, and in drying process
When, the volume drying of crystal column surface is better achieved.
Effect around the quartzy microresonator guard circle of the annular of quartzy microresonator array setting is in bottom quartz portion
The installation of part, debugging in test process, can hold cyclic annular quartzy microresonator guard circle, it is weaker to avoid direct contact with intensity
Rodlike quartz construction, cause the damage of rodlike quartz construction.Meanwhile quartzy microresonator guard circle also needs to guarantee cleaning medical fluid
It can free in and out, and full of the gap between quartzy microresonator array and crystal column surface, enable ultrasonic wave/megasonic energy
It is enough effectively transmitted in the cleaning medical fluid thin layer of crystal column surface.
When the height of quartzy microresonator guard circle is consistent with the height of quartzy microresonator array, figure wafer without
When damaging cleaning device work, device has a certain distance apart from crystal column surface, and cleaning medical fluid can enter the micro- resonance of quartz
In the gap of chamber and crystal column surface.But due to the effect of surface tension of liquid, the replacement result for cleaning medical fluid can be poor, shadow
The exchange process for ringing new, old medical fluid, causes cleaning effect poor.
As the scheme advanced optimized can there are many, for example, quartzy microresonator can be made as shown in Fig. 2-Fig. 3
The lower end surface height of guard circle 11 is slightly less than the lower end surface height of quartzy microresonator array 10, in order to clean medical fluid disengaging stone
Gap between English microresonator array and crystal column surface.But in this prioritization scheme, the bottom surface of quartzy microresonator array is low
It is poor for the protecting effect of quartzy microresonator in the bottom surface of quartzy microresonator guard circle.
Therefore, it can be optimized with further progress, such as make the height and quartz microresonator of quartzy microresonator guard circle
The height of array is consistent, but the aperture of specific shape is provided in the recess sidewall of guard circle, keeps cleaning medical fluid free
Pass in and out the gap between quartzy microresonator array and crystal column surface.Some embodiments include: as shown in figure 13, quartzy micro- total
Rectangular aperture 11 ' is provided in the recess sidewall of vibration chamber guard circle 11；Or rectangle aperture can be used into arch aperture
And other forms gate-shaped or window-like aperture substituted.
As other improvements, in quartzy microresonator array the shape of rodlike quartz construction may include round and its
Its some shapes, such as triangle, pentagon, the solid bars structure such as rectangle.Meanwhile the arrangement of each rodlike quartz construction can
To be distributed according to certain rules, can also be distributed with completely random, to prevent locking apparatus with spray arm swing when in specific region shape
At the higher region of energy, keep ultrasonic wave/mega sonic wave Energy distribution more uniform.For example, being this hair as shown in figure 14
The bottom quartz member of the quartzy 10 rodlike quartz construction of triangle with regular distribution of microresonator array in a bright embodiment
Schematic diagram.It again as shown in figure 15, is that quartzy microresonator array 10 is arranged with random distribution in one embodiment of the invention
The bottom quartz member schematic diagram of the rodlike quartz construction of rectangle.
Cleaning device shape can be optimized, i.e., as alternatively improved point for the cleaning efficiency for improving cleaning device
Ontology monnolithic case including ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member is optimized, to improve cleaning
The area coverage of device.For example, the horizontal profile of ontology may be designed to sector, triangle, pentagon either strip
(side) shape, i.e., so that the lower end facial contour of ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member forms sector, triangle, five
Side shape either strip (side) shape；Further such that piezoelectric material and coupling layer, cyclic annular quartzy microresonator guard circle and quartz
The lower end facial contour of microresonator array forms sector, triangle, pentagon either strip (side) shape.For example, such as Figure 16 institute
Show, is the cleaning device schematic diagram in one embodiment of the invention with fan-shaped shape quartz microresonator array 10, the device
In can have fan-shaped piezoelectric material and coupling layer, the quartzy microresonator guard circle of ring-type of sector and quartzy microresonator battle array
Column, upper-lower casing can be assembled by upper-lower casing fixation hole 34.This apparatus structure can be covered from wafer center of circle the to wafer
One fan-shaped region at edge, guarantee that the crystal column surface in the region can be cleaned simultaneously, improves cleaning efficiency with this,
Improve cleaning uniformity.It again as shown in figure 17, is that there is the micro- resonance of strip (side) shape shape quartz in one embodiment of the invention
The cleaning device schematic diagram of chamber array 10 can have the piezoelectric material of strip and the ring-type of coupling layer, strip in the device
Quartzy microresonator guard circle and quartzy microresonator array, it is one long from wafer center of circle the to crystal round fringes so as to cover
Bar-shaped zone.
In conclusion the present invention passes through in the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device ontology hollow shell
Ultrasonic wave of the setting based on piezoelectric material/mega sonic wave generating mechanism generates sonic oscillation in vivo, and passes through ultrasonic wave/mega sonic wave hair
The quartzy microresonator array submerged in wafer supernatant wash liquid connected below life structure, not with crystal column surface by the direction of propagation
Vertical ultrasonic wave/megasonic energy carries out selective removal, makes ultrasonic wave/megasonic energy vertical conduction to wafer, guarantees
In ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause the damage of figure crystal column surface figure
Wound, to realize the mobile cleaning of the not damaged ultrasonic wave to figure wafer/mega sonic wave.Meanwhile passing through ultrasonic wave/megasonic energy
Control unit, in the real-time position information of crystal column surface, adjusts the duty ratio or power of electric signal according to ontology, and passes through piezoelectricity
Material is converted, and any position of crystal column surface is made to obtain same amount of ultrasonic wave/mega sonic wave pulse within the unit time
Signal or ultrasonic wave/megasonic energy mention to realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed
The high uniformity of cleaning effect.
The equally distributed ultrasonic wave of above-mentioned energy of the invention/mega sonic wave cleaning device has the advantage that
1) it by rationally designing the quartzy microresonator array structure of bottom quartz member, realizes and removes on other directions
Ultrasonic wave/megasonic energy only retains the direction of propagation ultrasonic wave/megasonic energy mesh vertical with crystal column surface to be cleaned
, guarantee in ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause figure crystal column surface figure
Damage；
2) in ultrasonic wave/mega sonic wave cleaning process, pass through the setting signal duty ratio between signal source and piezoelectric material
Adjuster or power regulator, and real time position feedback unit is connected, it can be existed according to the ontology that real time position feedback unit is fed back
The real-time position information of crystal column surface, adjusts the duty ratio or power of electric signal, and is converted by piezoelectric material, and wafer is made
Any position on surface obtains same amount of ultrasonic wave/mega sonic wave pulse signal or ultrasonic wave/mega sonic wave within the unit time
Energy improves the uniform of cleaning effect to realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed
Property；
3) shape of the rodlike quartz construction of quartzy microresonator array may include round and some other shapes, such as
Triangle, pentagon, rectangle etc.；Meanwhile the arrangement of each rodlike quartz construction can be distributed according to certain rules, it can also be with
Completely random distribution forms the higher region of energy in specific region when to prevent locking apparatus with spray arm swing, makes ultrasonic wave/million
The Energy distribution of sound wave is more uniform；
4) it is provided with aperture on cyclic annular quartzy microresonator guard circle, can makes to clean the quartzy microresonator of medical fluid free entry and exit
Gap between array and figure crystal column surface improves cleaning medicine to eliminate the surface tension effects of crystal column surface cleaning medical fluid
The replacement result of liquid accelerates the exchange process of new, old medical fluid, improves the effect of cleaning；
5) device may be designed to fan-shaped, triangle, and the covering surface of device can be improved in pentagon either strip
Product, so as to improve the cleaning efficiency of device；
6) during cleaning process, a gas blanket is formed above wafer using protective gas, wafer can be made
With oxygen-barrier, crystal column surface silicon materials is prevented to be oxidized；In the drying process, since wafer is completely in covering for protective gas
Under lid, when wafer high speed rotation, the drying of whole wafer range can be better achieved, prevent the generation of washmarking defect,
The drying of crystal round fringes can be better achieved.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device characterized by comprising
Ontology, hollow inside are equipped with ultrasonic wave/mega sonic wave generating mechanism and bottom quartz member, the ultrasonic wave/million sound
Wave generating mechanism is equipped with piezoelectric material, this external signal source of piezoelectric material connection, the bottom quartz member be equipped with by
The quartzy microresonator array of multiple vertical rodlike quartz constructions compositions, the quartz microresonator array is from the ontology lower end
The opening in face is stretched out；
Spray arm is driven by spray arm rotating electric machine, and the circular arc for driving ontology to make the center of circle in crystal column surface moves back and forth；
Real time position feedback unit, for acquiring unit turn angle or the unit turn time of spray arm rotating electric machine, to obtain
It takes ontology in the relative position information of crystal column surface, and exports feedback information；
Ultrasonic wave/megasonic energy control unit, is connected between signal source and piezoelectric material, for anti-according to real time position
Relative position information of the ontology in crystal column surface for presenting unit feedback is adjusted signal source output electric signal；
Wherein, the piezoelectric material receives electric signal and generates ultrasonic energy, conducts downwards through bottom quartz member, and through quartz
After the selective removal of microresonator array, by submerging the quartzy microresonator array in figure wafer supernatant wash liquid
Lower end surface vertical conduction to figure crystal column surface, drive cleaning medical fluid oscillation, to carry out the mobile cleaning of ultrasonic wave/mega sonic wave,
Meanwhile by the ultrasonic wave/megasonic energy control unit according to ontology in the change in location of crystal column surface, adjustment is logical in real time
The signal source output electric signal crossed, makes the duty ratio of electric signal from crystal circle center to crystal round fringes by being gradually reduced greatly, so that brilliant
Any position of circular surfaces obtains same amount of ultrasonic wave/mega sonic wave pulse signal within the unit time, or makes electric signal
Power be gradually increased from crystal circle center to crystal round fringes by small so that any position of crystal column surface obtains within the unit time
Same amount of ultrasonic wave/megasonic energy, and the corresponding conversion through piezoelectric material, realization whole wafer wide-ultra sound wave/
Megasonic energy is uniformly distributed.
2. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 1, which is characterized in that described
Ultrasonic wave/megasonic energy control unit includes a signal dutyfactor adjuster, and the signal dutyfactor adjuster connects respectively
Signal source, piezoelectric material and real time position feedback unit are connect, the sheet for spray arm being driven by the real time position feedback unit
Body gives signal dutyfactor adjuster in the real time position feedback of crystal column surface, and signal dutyfactor adjuster adjusts accordingly makes electric signal
Duty ratio be converted to by being gradually reduced greatly, and by piezoelectric material with corresponding duty ratio from crystal circle center to crystal round fringes
Ultrasonic wave/mega sonic wave pulse signal so that any position of crystal column surface obtained within the unit time same amount of ultrasonic wave/
Mega sonic wave pulse signal, to realize that whole wafer wide-ultra sound wave/megasonic energy is uniformly distributed.
3. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 1, which is characterized in that described
Ultrasonic wave/megasonic energy control unit includes a power regulator, and the power regulator is separately connected signal source, piezoelectricity
Material and real time position feedback unit, the ontology for being driven spray arm by the real time position feedback unit is in crystal column surface
For real time position feedback to power regulator, power regulator adjusts accordingly makes the power of electric signal from crystal circle center to crystal round fringes
It is gradually increased by small, and the ultrasonic wave with corresponding change/mega sonic wave power is converted to by piezoelectric material, so that crystal column surface
Any position same amount of ultrasonic wave/megasonic energy is obtained within the unit time, to realize within the scope of whole wafer
Ultrasonic wave/megasonic energy is uniformly distributed.
4. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 1, which is characterized in that described
Ontology specifically includes:
Upper and lower casing, connection form the hollow sealing chamber of ontology, and the seal chamber forms opening in the lower end surface of lower case；
Ultrasonic wave/mega sonic wave generating mechanism is set in seal chamber, piezoelectric material and coupling layer including being close to setting up and down, institute
It states coupling layer lower part and is close to bottom quartz member top, the piezoelectric material, coupling layer and bottom quartz member pass through in upper casing
Holddown spring and holddown spring guide post successively set between piezoelectric material are compressed at the top of body, the coupling layer side
There is gap, the upper housing is equipped with piezoelectric material binding post, uses between portion, piezoelectric material side and top and sealing cavity wall
In external electric signal is directed into piezoelectric material, and by connection coupling layer binding post forming circuit, to generate ultrasonic wave/million sound
Wave oscillation energy；
Bottom quartz member is set in seal chamber, the quartzy microresonator guard circle of ring-type for forming downwardly open groove including one,
And the quartzy microresonator array that a upper end is connected at bottom portion of groove, lower end is free end, the cyclic annular quartz are micro- total
Shake chamber guard circle top abutting coupling layer lower part, and side and seal chamber, which are located between the inner wall of lower housing section, to be tightly connected,
Its groove lower end is stretched out by the opening of lower case lower end surface, and the lower end surface of the quartz microresonator array is not higher than under groove
End face.
5. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 4, which is characterized in that described
Upper housing is equipped with gas access and outlet, and connection is made of sealing cavity wall and ultrasonic wave/mega sonic wave generating mechanism outer wall
Cooling chamber cools down ultrasonic wave/mega sonic wave generating mechanism, and for being passed through cooling gas by gas access by gas
Outlet discharge.
6. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 4, which is characterized in that described
The connection of lower case side is equipped with gas atmosphere inlet and outlet, and the stomata or slit that have a down dip are enclosed for one in the protective gas outlet,
It as being passed through protective gas by gas atmosphere inlet, and is exported and is sprayed by protective gas, to form one in figure crystal column surface
A gas blanket.
7. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 4, which is characterized in that described
Upper housing is equipped with gas access, and the lower case side is equipped with gas vent, the gas vent be the stomata that has a down dip of circle or
The cooling that slit, the gas access and outlet are made of sealing cavity wall and ultrasonic wave/mega sonic wave generating mechanism outer wall
Chamber cools down ultrasonic wave/mega sonic wave generating mechanism, and passing through gas for being passed through cooling gas by gas access
While outlet-inclined impeller vane is discharged downwards, a gas blanket is formed in figure crystal column surface.
8. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 4, which is characterized in that described
The recess sidewall of cyclic annular quartz microresonator guard circle is equipped with one to several apertures, for keeping cleaning medical fluid free entry and exit quartz micro-
Gap between resonant cavity array and figure crystal column surface.
9. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 4, which is characterized in that described
The shape of the quartzy rodlike quartz construction of microresonator array includes circle, triangle, pentagon or rectangle, each rodlike quartz knot
Structure is distributed according to certain rules, or is distributed according to random fashion.
10. the equally distributed ultrasonic wave of energy/mega sonic wave cleaning device according to claim 4, which is characterized in that described
The profile of ontology and ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member is sector, triangle, pentagon either length
Bar shaped.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610741151.1A CN106340477B (en) | 2016-08-26 | 2016-08-26 | A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device |
| TW106100825A TWI600479B (en) | 2016-08-26 | 2017-01-11 | Ultrasonic and megasonic cleaning device |
| US15/663,667 US20180056340A1 (en) | 2016-08-26 | 2017-07-28 | Ultrasonic/megasonic cleaning device |
| SG10201706436XA SG10201706436XA (en) | 2016-08-26 | 2017-08-07 | Ultrasonic/megasonic cleaning device |
| KR1020170107473A KR101940288B1 (en) | 2016-08-26 | 2017-08-24 | Ultrasonic/mega sonic cleaning device |
| US17/020,217 US11554390B2 (en) | 2016-08-26 | 2020-09-14 | Ultrasonic/megasonic cleaning device |
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| CN201610741151.1A CN106340477B (en) | 2016-08-26 | 2016-08-26 | A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device |
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| CN109860087B (en) * | 2019-04-18 | 2020-11-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer box suspension mechanism |
| CN110976377B (en) * | 2019-12-10 | 2022-08-19 | 爱阔特(上海)清洗设备制造有限公司 | Ultrasonic cleaning device for wafer cleaning |
| CN112354968B (en) * | 2020-11-09 | 2022-04-12 | 福建福强精密印制线路板有限公司 | Circuit board cleaning mechanism and control method |
| CN113996593B (en) * | 2021-11-15 | 2024-06-21 | 东莞市佳源达科技有限公司 | Ultrasonic cleaning device for cleaning semiconductor surface |
| CN114345826B (en) * | 2021-12-28 | 2023-01-03 | 北京东方金荣超声电器有限公司 | Megasonic transmitting device for cleaning wafer and sonic cleaning system |
| CN114054429B (en) * | 2022-01-11 | 2022-04-01 | 北京东方金荣超声电器有限公司 | Megasonic cleaning system for large-size wafer |
| CN116581067B (en) * | 2023-07-12 | 2023-09-22 | 北京东方金荣超声电器有限公司 | Control method of megasonic system based on wet processing of device |
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| CN102641869A (en) * | 2012-04-17 | 2012-08-22 | 北京七星华创电子股份有限公司 | Wafer cleaning device and cleaning method |
| JP2017533823A (en) * | 2014-11-13 | 2017-11-16 | シーティーエス・コーポレーションＣｔｓ Ｃｏｒｐｏｒａｔｉｏｎ | Filter residue removal system and method |
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| CN1655884A (en) * | 2002-03-29 | 2005-08-17 | 兰姆研究有限公司 | In-situ local heating using megasonic transducer resonator |
| CN1805802A (en) * | 2003-06-12 | 2006-07-19 | Sez股份公司 | Uniform cavitation for particle removal |
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
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Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: No.1 Jiuxianqiao East Road, Chaoyang District, Beijing 100016 Patentee before: BEIJING SEVENSTAR ELECTRONICS Co.,Ltd. |