CN106269452B - A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device - Google Patents
A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device Download PDFInfo
- Publication number
- CN106269452B CN106269452B CN201610739227.7A CN201610739227A CN106269452B CN 106269452 B CN106269452 B CN 106269452B CN 201610739227 A CN201610739227 A CN 201610739227A CN 106269452 B CN106269452 B CN 106269452B
- Authority
- CN
- China
- Prior art keywords
- ultrasonic wave
- frequency
- wave
- mega sonic
- piezoelectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 124
- 239000000463 material Substances 0.000 claims abstract description 113
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000010453 quartz Substances 0.000 claims abstract description 93
- 239000013078 crystal Substances 0.000 claims abstract description 86
- 230000007246 mechanism Effects 0.000 claims abstract description 49
- 239000007789 gas Substances 0.000 claims description 70
- 230000008878 coupling Effects 0.000 claims description 35
- 238000010168 coupling process Methods 0.000 claims description 35
- 238000005859 coupling reaction Methods 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 29
- 238000010276 construction Methods 0.000 claims description 26
- 230000000694 effects Effects 0.000 claims description 25
- 125000004122 cyclic group Chemical group 0.000 claims description 24
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000000112 cooling gas Substances 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 6
- 230000010356 wave oscillation Effects 0.000 claims description 6
- 230000008676 import Effects 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 239000003814 drug Substances 0.000 claims description 3
- 239000006228 supernatant Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 54
- 238000000034 method Methods 0.000 description 47
- 230000008569 process Effects 0.000 description 41
- 239000010410 layer Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 20
- 239000007921 spray Substances 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 238000001035 drying Methods 0.000 description 16
- 230000006378 damage Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 10
- 239000003344 environmental pollutant Substances 0.000 description 10
- 231100000719 pollutant Toxicity 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000002305 electric material Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000002633 protecting effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000001815 facial effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910003641 H2SiO3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000012913 prioritisation Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/50—Application to a particular transducer type
- B06B2201/55—Piezoelectric transducer
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning devices, including ontology and ultrasonic wave/megasonic frequency control unit, ultrasonic wave/mega sonic wave generating mechanism and bottom quartz member are equipped in ontology, ultrasonic wave/mega sonic wave generating mechanism, which is equipped with, several there is different natural frequencies and group to be combined into whole piezoelectric material, bottom quartz member is equipped with quartzy microresonator array, quartzy microresonator array is stretched out from the opening of ontology lower end surface, ultrasonic wave/megasonic frequency control unit is connected between signal source and piezoelectric material, selective removal can be carried out by ultrasonic wave/megasonic energy of the quartzy microresonator array to the direction of propagation and crystal column surface direction out of plumb, and the electric signal of different frequency is imported by corresponding piezoelectric material by ultrasonic wave/megasonic frequency control unit at random, make ultrasonic wave/million sound The ultrasonic wave that wave generating mechanism generates/megasonic vibration frequency dynamic variation, realizes the not damaged cleaning to figure wafer.
Description
Technical field
The present invention relates to semiconductor integrated circuit to process cleaning equipment field, more particularly, to one kind by that will have
The piezoelectric material of different natural frequencies combines ultrasonic wave/mega sonic wave cleaning device of composition, realizes to figure wafer
Not damaged ultrasonic wave/mega sonic wave cleaning.
Background technique
With the rapid development of semiconductor integrated circuit manufacturing technology, the pattern character size of IC chip has entered
To the deep-submicron stage, and cause the feature ruler of superfine circuit malfunction or the crucial pollutant (such as particle) of damage on chip
It is very little also to greatly reduce therewith.
In the production and processing process of integrated circuits, semiconductor crystal wafer usually all can be by such as film deposition, quarter
The multiple tracks processing steps such as erosion, polishing.And these processing steps just become the important place of pollutant generation.In order to keep wafer table
The clean conditions in face are eliminated and are deposited on the pollutant of crystal column surface in each processing step, it is necessary to being subjected to per pass technique
Wafer after step starts the cleaning processing.Therefore, cleaning process becomes most common processing step in integrated circuit fabrication process,
Its object is to efficiently control the contamination of each step level, to realize the target of each processing step.
In order to effectively remove the pollutant of crystal column surface, when carrying out single-wafer wet clean process, wafer will
It is placed on the rotating platform (such as rotary chuck) of cleaning equipment, and is rotated according to certain speed；Simultaneously to wafer
The chemical liquid of surface spraying certain flow, cleans crystal column surface.
By cleaning reach removal pollutant purpose while, it is most important that guarantee to wafer, especially for
The not damaged cleaning of figure crystal column surface figure.
With the diminution of integrated circuit pattern characteristic size, the removal difficulty of the smaller size of pollutant of crystal column surface is not yet
It is disconnected to increase.Many novel washing technologies have been applied on cleaning equipment.It is wherein, most important that one is ultrasonic wave/million sound
Wave cleaning technique.But also can not while improving pollutant removal efficiency using ultrasonic wave/mega sonic wave cleaning technique
Bring the damage problem for figure wafer with avoiding.This is mainly due to the ultrasounds of the direction of propagation and crystal column surface out of plumb
Wave/megasonic energy is greater than the adhesive force of surfacial pattern and wafer to the active force of figure crystal column surface figure transverse direction, causes
Destruction when ultrasonic wave/mega sonic wave cleaning to surfacial pattern.
Meanwhile existing ultrasonic wave/mega sonic wave cleaning technique, it is by the way that the electric signal with single-frequency is directed into pressure
Electric material makes it generate the stretching vibration of high speed, so that generating ultrasonic wave/mega sonic wave oscillation energy carries out wafer cleaning.?
In ultrasonic wave/mega sonic wave cleaning process, acoustic wave energy is in the upper surface of wafer, the contact of lower surface and some different mediums
Face can all generate refraction and transmitting, the sound wave of these refractions and reflection and the single-frequency sound wave from the sending of piezo-electric crystal oscillator
The energy that interference will lead to regional area is too strong, causes the damage of crystal column surface fine pattern structure.
On the other hand, the cavitation erosion and direct flow that ultrasonic wave/mega sonic wave generates in cleansing medium can all accelerate particle contamination
Object realizes the raising of cleaning efficiency from the disengaging process of wafer surface.But for practical experience at present in the industry, cavitation erosion
The bubble that effect generates constantly is grown up, and the final size for rupturing brought physical energy is difficult to control, it is easy to cause chip
The damage of surface fine graphic structure.Thus row those skilled in the art prefer to realize using direct flow effect to the lossless of wafer
Wound cleaning.
Therefore, it is necessary to the generations using some new technological means control cavitation erosions, and to realize, more preferably wafer is not damaged clear
It washes.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of combined type multi-frequency ultrasound is provided
Wave/mega sonic wave cleaning device can eliminate the direction of propagation and crystal column surface when carrying out ultrasonic wave/mega sonic wave cleaning to wafer
Ultrasonic wave/megasonic energy of out of plumb can make to surpass to the damaging influence of figure crystal column surface figure horizontal force
The ultrasonic wave that sound wave/mega sonic wave generating mechanism generates/megasonic vibration frequency dynamic variation, to prevent from generating in cleaning medical fluid
Stable interference effect and bubbles burst phenomenon controls the generation of cavitation erosion, realizes the not damaged cleaning to figure wafer.
To achieve the above object, technical scheme is as follows:
A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device, comprising:
Ontology, hollow inside be equipped with ultrasonic wave/mega sonic wave generating mechanism and bottom quartz member, the ultrasonic wave/
Mega sonic wave generating mechanism is equipped with several piezoelectric materials, and each piezoelectric material has different intrinsic frequencies, and uniform combination exists
It is formed together entirety, described this external signal source of piezoelectric material connection, the bottom quartz member is equipped with by multiple vertical bars
The opening of the quartzy microresonator array of shape quartz construction composition, quartz microresonator array from the ontology lower end surface is stretched
Out；
Ultrasonic wave/megasonic frequency control unit, is connected between signal source and piezoelectric material, will be formed for controlling
Import corresponding each piezoelectric material at random with each piezoelectric material intrinsic frequency one-to-one signal source output electric signal；
Wherein, the piezoelectric material receives electric signal and generates ultrasonic energy, conducts downwards through bottom quartz member, and pass through
After the selective removal of quartzy microresonator array, by submerging the quartzy microresonator in figure wafer supernatant wash liquid
The lower end surface vertical conduction of array drives cleaning medical fluid oscillation, to figure crystal column surface to carry out ultrasonic wave/mega sonic wave movement clearly
It washes, meanwhile, the electric signal of different frequency is imported by corresponding piezoelectricity by the ultrasonic wave/megasonic frequency control unit at random
Material, the ultrasonic wave for generating ultrasonic wave/mega sonic wave generating mechanism/megasonic vibration frequency dynamic variation, to prevent from cleaning
Stable interference effect and bubbles burst phenomenon are generated in medical fluid.
Preferably, the ultrasonic wave/megasonic frequency control unit includes that a signal path selects derailing switch, the letter
Number channel selection switch device is set between quantity equal several signal sources and piezoelectric material, and each signal source respectively corresponds one
The consistent piezoelectric material of signal frequency is exported with it, the signal path selection derailing switch is only opened at each moment to be believed all the way
Connection number between source and corresponding piezoelectric material, and switch opening for different signal source and corresponding piezoelectric material interface channel at random
It closes, the ultrasonic wave for generating ultrasonic wave/mega sonic wave generating mechanism/megasonic vibration frequency dynamic variation.
Preferably, the ultrasonic wave/megasonic frequency control unit includes being sequentially arranged in signal source and several piezoelectric materials
Between a frequency converter and a channel to channel adapter, by the frequency converter change signal source output signal frequency, with
Export the electric signal of several different frequencies, and corresponded with the intrinsic frequency of each piezoelectric material, the channel to channel adapter according to
The signal frequency of frequency converter random output opens the interface channel switch of respective frequencies piezoelectric material, makes ultrasonic wave/mega sonic wave
The ultrasonic wave that generating mechanism generates/megasonic vibration frequency dynamic variation.
Preferably, the ontology specifically includes:
Upper and lower casing, connection form the hollow sealing chamber of ontology, and the seal chamber is formed in the lower end surface of lower case and opened
Mouthful；
Ultrasonic wave/mega sonic wave generating mechanism is set in seal chamber, piezoelectric material and coupling including being close to setting up and down
Bottom quartz member top is close in layer, the coupling layer lower part, the piezoelectric material, coupling layer and bottom quartz member by
Holddown spring and holddown spring guide post successively set between piezoelectric material are compressed at the top of upper housing, the coupling layer
There is gap between side, piezoelectric material side and top and sealing cavity wall, the upper housing is equipped with piezoelectric material binding post,
For external electric signal to be directed into piezoelectric material, and by connection coupling layer binding post forming circuit, to generate ultrasonic wave/million
Sonication energy；
Bottom quartz member is set in seal chamber, and the quartzy microresonator of ring-type for forming downwardly open groove including one is protected
The quartzy microresonator array that guard ring and a upper end are connected at bottom portion of groove, lower end is free end, the cyclic annular quartz
Coupling layer lower part is close on microresonator guard circle top, and side and seal chamber are located at the company of sealing between the inner wall of lower housing section
It connects, groove lower end is stretched out by the opening of lower case lower end surface, and the lower end surface of the quartz microresonator array is not higher than groove
Lower end surface.
Preferably, the upper housing is equipped with gas access and outlet, is connected to by sealing cavity wall and ultrasonic wave/mega sonic wave
The cooling chamber of generating mechanism outer wall composition, for being passed through cooling gas by gas access, to ultrasonic wave/mega sonic wave generating mechanism
It is cooled down, and is discharged by gas vent.
Preferably, the lower case side connection is equipped with gas atmosphere inlet and outlet, and the protective gas outlet is one
Enclose the stomata or slit that have a down dip, as being passed through protective gas by gas atmosphere inlet, and by protective gas outlet ejection, with
Figure crystal column surface forms a gas blanket.
Preferably, the upper housing is equipped with gas access, and the lower case side is equipped with gas vent, the gas vent
For stomata or slit that a circle has a down dip, the gas access and outlet are occurred by sealing cavity wall and ultrasonic wave/mega sonic wave
The cooling chamber of mechanism outer wall composition carries out ultrasonic wave/mega sonic wave generating mechanism for being passed through cooling gas by gas access
It is cooling, and while being discharged diagonally downward by gas vent, a gas blanket is formed in figure crystal column surface.
Preferably, the recess sidewall of the cyclic annular quartzy microresonator guard circle is equipped with one to several apertures, for making clearly
Wash liquid frees in and out the gap between quartzy microresonator array and figure crystal column surface.
Preferably, the shape of the quartzy rodlike quartz construction of microresonator array include circle, triangle, pentagon or
Rectangle, each rodlike quartz construction is distributed according to certain rules, or is distributed according to random fashion.
Preferably, the profile of the ontology and ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member is sector, three
Angular, pentagon either strip.
The invention has the following advantages that
1) it by rationally designing the quartzy microresonator array structure of bottom quartz member, realizes and removes on other directions
Ultrasonic wave/megasonic energy only retains the direction of propagation ultrasonic wave/megasonic energy mesh vertical with crystal column surface to be cleaned
, guarantee in ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause figure crystal column surface figure
Damage；
2) in ultrasonic wave/mega sonic wave cleaning process, single signal source is replaced by using multiple signal sources, or adopt
With change single signal source issue signal frequency, to form the electric signal of several different frequencies, and respectively correspond one with
The consistent piezoelectric material of its frequency only makes a kind of piezoelectric material of intrinsic frequency work at each moment, and in each piezoresistive material
Switch at random between material, the ultrasonic wave/megasonic frequency dynamic change for generating ultrasonic wave/mega sonic wave generating mechanism in this way may be used
To prevent from stablizing the generation interfered；Simultaneously as the frequency of sound wave generated when different piezoelectric material work changes, sound wave
Wavelength will also change therewith, when the limit of rupture has not been reached yet in the bubble that previous sound wave generates during growing up,
The frequency of sound wave has switched, and new bubble is generated in another position, and original bubble then further will not grow up and rupture；
In such cyclic process, with the continuous variation of frequency of sound wave, bubble is constantly be generated and disappears, but not occurs broken
It splits, the cavitation effect that can prevent bubbles burst from generating causes the damage of crystal column surface fine pattern structure；
3) shape of the rodlike quartz construction of quartzy microresonator array may include round and some other shapes, such as
Triangle, pentagon, rectangle etc.；Meanwhile the arrangement of each rodlike quartz construction can be distributed according to certain rules, it can also be with
Completely random distribution forms the higher region of energy in specific region when to prevent locking apparatus with spray arm swing, makes ultrasonic wave/million
The Energy distribution of sound wave is more uniform；
4) it is provided with aperture on cyclic annular quartzy microresonator guard circle, can makes to clean the quartzy microresonator of medical fluid free entry and exit
Gap between array and figure crystal column surface improves cleaning medicine to eliminate the surface tension effects of crystal column surface cleaning medical fluid
The replacement result of liquid accelerates the exchange process of new, old medical fluid, improves the effect of cleaning；
5) device may be designed to fan-shaped, triangle, and the covering surface of device can be improved in pentagon either strip
Product, so as to improve the cleaning efficiency of device；
6) during cleaning process, a gas blanket is formed above wafer using protective gas, wafer can be made
With oxygen-barrier, crystal column surface silicon materials is prevented to be oxidized；In the drying process, since wafer is completely in covering for protective gas
Under lid, when wafer high speed rotation, the drying of whole wafer range can be better achieved, prevent the generation of washmarking defect,
The drying of crystal round fringes can be better achieved.
Detailed description of the invention
Fig. 1 is one of one embodiment of the invention combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device structural representation
Figure；
Fig. 2 is the structure sectional view of the bottom quartz member in one embodiment of the invention；
Fig. 3 is the schematic perspective view of the bottom Fig. 2 quartz member；
Fig. 4 is the outline structural diagram of Fig. 1 device；
Fig. 5 is a kind of mated condition schematic diagram of the device of the invention and spray arm；
Fig. 6 a- Fig. 6 b is two kinds of ultrasonic waves/megasonic frequency control unit structure principle chart in the embodiment of the present invention；
Fig. 7 a- Fig. 7 e is that several integrated states of the piezoelectric material with different natural frequencies in the embodiment of the present invention show
It is intended to；
Fig. 8 is that the principle of quartzy microresonator array selective removal portion of ultrasonic sound wave/megasonic energy of the invention is shown
It is intended to；
Fig. 9 is combined type multi-frequency ultrasonic wave/million sound that one of one embodiment of the invention has gas shield effect
The structure sectional view of wave cleaning device；
Figure 10 is the outline structural diagram of Fig. 9；
Figure 11 is combined type multi-frequency ultrasonic wave/million that one of another embodiment of the present invention has gas shield effect
The structure sectional view of sound wave cleaning device；
Figure 12 is the outline structural diagram of Figure 11；
Figure 13 is the quartzy microresonator guard circle structural schematic diagram of ring-type for being equipped with aperture in one embodiment of the invention；
Figure 14 is the rodlike quartz construction schematic diagram of triangle of regular distribution in one embodiment of the invention；
Figure 15 is the rodlike quartz construction schematic diagram of rectangle of random distribution in one embodiment of the invention；
Figure 16 is the quartzy microresonator array schematic diagram of sector in one embodiment of the invention；
Figure 17 is the rectangle quartz microresonator array schematic diagram in one embodiment of the invention.
I, ontology in figure, 10. quartzy microresonator arrays, 11. quartzy microresonator guard circles, 11 ' quartz microresonators
Guard circle aperture, 12. bottom quartz members, 13. gaskets, 14. piezoelectric materials, 15. upper housings, the fixed spiral shell of 16. spray arms
Keyhole, 17. holddown spring guide posts, 18. binding posts, 19. holddown springs, 20. coupling layers, 21. sealing rings, 22. lower cases,
23/23-1/23-2. signal source, 24. ultrasonic waves/megasonic frequency control unit, 24-1. signal path select derailing switch, 24-
2. frequency converter, 24-3. channel to channel adapter, 25. cooling gas inlets, the outlet of 26/26 ' cooling gas, 27. spray arms, 28. is solid
Fixed rack, 29. cleaning medical fluids, 30. wafers, 30 ' crystal column surface figure structures, 31. gas atmosphere inlets, 32. protective gas go out
Mouthful, 33. upper-lower casing fixation holes, ultrasonic wave/megasonic energy of the direction of propagation A. and crystal column surface out of plumb, the direction of propagation B.
Ultrasonic wave/the megasonic energy vertical with crystal column surface.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, first referring to Fig. 1, Fig. 1 is one of one embodiment of the invention
Combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device structural schematic diagram.As shown in Figure 1, a kind of combined type multifrequency of the invention
Rate ultrasonic wave/mega sonic wave cleaning device, above the removable figure wafer being suspended in cleaning equipment, for being placed on rotation
Figure wafer on platform carries out ultrasonic wave/mega sonic wave medical fluid cleaning.Described device includes ontology I and ultrasonic wave/mega sonic wave frequency
Rate control unit 24.
Ontology I is hollow structure, and inside is equipped with ultrasonic wave/mega sonic wave generating mechanism 14,20 and bottom quartz member 12.Institute
Ultrasonic wave/mega sonic wave generating mechanism is stated equipped with several piezoelectric materials 14, each piezoelectric material has different intrinsic frequencies, and
Equably it is grouped together into an entirety；Described this external signal source 23 of the connection of piezoelectric material 14.The bottom quartz
Component 12 is equipped with the quartzy microresonator array 10 being made of multiple vertical rodlike quartz constructions, the quartz microresonator array
Ontology is stretched out from the opening that the ontology lower end surface has in 10 lower end surface.
Ultrasonic wave/megasonic frequency control unit 24 is connected between signal source 23 and piezoelectric material 14, for example, ultrasonic
Wave/megasonic frequency control unit is mountable external at this, and one end connecting signal source, the other end connect ultrasonic wave in ontology/
The piezoelectric material of mega sonic wave generating mechanism.The electric signal that signal source 23 exports passes through ultrasonic wave/megasonic frequency control unit 24
Import ultrasonic wave/mega sonic wave generating mechanism piezoelectric material 14.Ultrasonic wave/megasonic frequency control unit 24 is for controlling shape
At import corresponding each piezoelectric material 14 at random with each piezoelectric material intrinsic frequency one-to-one signal source output electric signal.
Please refer to Fig. 1.Ontology specifically may include upper and lower casing 15,22, and the ultrasonic wave being mounted in upper and lower shell body/
Mega sonic wave generating mechanism 14,20 and bottom quartz member 12.Upper and lower casing 14,20 can be used removably and be attached, example
Upper and lower casing can be such as fixedly connected by bolt, and be formed in the interior thereof seal chamber upon connection.The seal chamber exists
The lower end surface of lower case has opening (i.e. the opening of ontology lower end surface).In order to guarantee the upper and lower casing sealing performance after installation,
Gasket 13 can be housed between the engaging portion of upper and lower casing.
Please refer to Fig. 1.A ultrasonic wave/mega sonic wave generating mechanism 14 and 20 is equipped with inside seal chamber.Ultrasonic wave/million sound
There is gap, so as to form a cooling chamber between the top and side of wave generating mechanism and the inner wall of seal chamber.In ultrasound
Wave/mega sonic wave generating mechanism lower section is equipped with a bottom quartz member 12 in a manner of fitting closely.Bottom quartz member packet
Include the cyclic annular quartzy microresonator guard circle 11 and a quartzy microresonator array 10 for being vertically connected with setting.Cyclic annular quartz
Microresonator guard circle 11 has the groove structure for being formed down opening, and quartzy microresonator array 10 is mounted on groove structure
It is interior；The upper end connecting groove bottom of quartzy microresonator array 10, lower end is free end；Quartzy microresonator array 10 is by multiple
Vertical rodlike quartz construction forms a microresonator array.
By the top and ultrasonic wave/mega sonic wave of cyclic annular quartzy microresonator guard circle 11 machine occurs for bottom quartz member 12
The bottom of structure 14 and 20 forms and fits closely connection；Also, bottom quartz member 12 passes through cyclic annular quartzy microresonator guard circle
11 side and the sealing cavity wall of 22 part of lower case carry out step installation and cooperate.Similarly, after in order to guarantee installation
Sealing performance between lower case 22 and bottom quartz member 12, in lower case 22 and cyclic annular quartzy microresonator guard circle 11
Sealing ring 21 can be housed between engaging portion.
Please refer to Fig. 1.The groove lower end of cyclic annular quartz microresonator guard circle 11 is free end, by 22 lower end of lower case
The opening in face extends downwardly lower case.The lower end surface of the quartz microresonator array 10 is not higher than cyclic annular quartzy microresonator
The lower end surface of the lower end surface of guard circle groove, i.e., the described quartzy microresonator array 10 can be micro- total less than or equal to cyclic annular quartz
The groove lower end surface of vibration chamber guard circle 11.A kind of quartzy microresonator array lower end surface is illustrated as lower than cyclic annular quartzy microresonator
The situation of guard circle groove lower end surface.
Fig. 2 and Fig. 3 are please referred to, Fig. 2 is the structure sectional view of the bottom quartz member in one embodiment of the invention, and Fig. 3 is
The schematic perspective view of the bottom Fig. 2 quartz member.As shown in Figures 2 and 3, in bottom quartz member 12, quartz is micro- total
The lower end surface height having the same of each rodlike quartz construction of vibration chamber array 10, and below cyclic annular quartzy microresonator is protected
The groove lower end surface of guard ring 11.Each rodlike quartz construction can form equally distributed quartzy microresonator array.
In the installation, debugging, test process of bottom quartz member 12, cyclic annular quartzy microresonator protection can be held
Circle, avoids direct contact with the weaker rodlike quartz construction of intensity, causes the damage of rodlike quartz construction.Bottom quartz member bottom surface
On quartzy microresonator array be vertically arranged by with crystal column surface direction, the size of rodlike quartz construction can be diameter in 0.5-
Between 5mm, length can carry out corresponding configuration according to ultrasonic wave/mega sonic wave working frequency is different in 2mm or more.Rodlike quartz
The quantity and distribution density of structure can also be configured with working ability accordingly according to actual needs.
Please continue to refer to Fig. 1.Ultrasonic wave/million based on piezoelectric material can be selected in the ultrasonic wave/mega sonic wave generating mechanism
Sonic generator.In the present embodiment, the ultrasonic wave/mega sonic wave generating mechanism may include the upper and lower piezoelectric material for being close to connection
14 and coupling layer 20.Metal production can be used in coupling layer.The lower part of the coupling layer 20 fits closely cyclic annular quartzy microresonator
The top of guard circle 11.To guarantee connection effect and being protected to neutrality, the lower part of the coupling layer 20 and cyclic annular quartzy microresonator
The flute profile connection type of diagram can be used between the top of guard ring 11.The side of the coupling layer 20, piezoelectric material 14 side
There is certain gap between top and the inner wall of seal chamber, in favor of carrying out gas cooling.
Several holddown springs 19 and holddown spring guiding are sequentially arranged between 15 inner top of upper housing and piezoelectric material 14
Column 17, under the guiding role of holddown spring guide post 17, holddown spring 19 is in impaction state in the vertical direction, and will pressure
Electric material 14, coupling layer 20 are pressed downward, be allowed to the quartzy microresonator guard circle 11 of the ring-type of lower part and device lower case 22 it
Between without gap, convenient for the effective transmission of ultrasonic wave/megasonic energy.
The upper housing is equipped with piezoelectric material binding post 18, and the electric signal for generating outside source 23 is directed into pressure
Electric material 14, and by connection coupling layer binding post forming circuit, to generate ultrasonic wave/mega sonic wave oscillation energy.Piezoelectric material
14 receive the stretching vibration of generation high speed after electric signal, form ultrasonic wave/mega sonic wave oscillation, and oscillation energy is conducted downwards
To coupling layer 20.
The coupling layer 20 is made of single metal or various metals, with a thickness of ultrasonic wave caused by piezoelectric material/
The integer of mega sonic wave wavelength extraordinarily 1/4 wavelength.Coupling layer 20 can be bonded by conducting resinl and piezoelectric material 14.Piezoelectric material and coupling
Corrosion-resistant finishes can be coated by closing layer surface, prevent cleaning medical fluid from generating corrosion to coupling layer metal and piezoelectric material.
It can be closed by conducting resinl or low melting point between the coupling layer 20 and cyclic annular quartzy microresonator guard circle 11
The sheet metals such as golden or softer hardness gold or silver connection, to guarantee not having gap therebetween.
Referring to Fig. 4, the outline structural diagram that Fig. 4 is Fig. 1 device (omits ultrasonic wave/megasonic frequency control in figure
Unit processed and signal source, similarly hereinafter).As shown in figure 4, upper housing 15 is equipped with cooling gas inlet 25 and outlet 26, it is connected to by close
Seal cavity wall and ultrasonic wave/mega sonic wave generating mechanism outer wall composition cooling chamber.It can be by cooling gas inlet 25 by cooling air
Body introduces empty inside the device being made of device upper housing 15, device lower case 22, coupling layer 20 and bottom quartz member 12
Chamber, after completion is exchanged with the heat of piezoelectric material 14 and coupling layer 20, by 26 discharge of cooling gas outlet, to realize to ultrasound
Wave/mega sonic wave generating mechanism piezoelectric material and coupling layer carry out effectively cooling.
Referring to Fig. 5, Fig. 5 is a kind of mated condition schematic diagram of the device of the invention and spray arm.As shown in figure 5, can
The ontology upper housing 15 of apparatus of the present invention is passed through fixed bracket 28 to be attached with spray arm 27, to realize that it is clear that spray arm drives
Cleaning device makees reciprocal circular motion in crystal column surface and carries out the mobile cleaning of ultrasonic wave/mega sonic wave, and realize crystal column surface ultrasonic wave/
The uniform fold of megasonic energy.
Please referring to Fig. 6 a- Fig. 6 b, Fig. 6 a- Fig. 6 b is two kinds of ultrasonic waves/megasonic frequency control in the embodiment of the present invention
Unit construction principle figure.As shown in Figure 6 a, ultrasonic wave/megasonic frequency control unit is provided with a signal path selection switch
Device 24-1.Meanwhile using the signal source 23-1 of multiple exportable different frequencies, each signal source respectively corresponds one and signal source
The consistent piezoelectric material 14 of the signal frequency of sending.Connection line between all signal sources and corresponding piezoelectric material is logical
A signal path selection derailing switch 24-1 is crossed to be controlled.The signal source K1-K3 of three different frequencies is used in the present embodiment
Respectively correspond the piezoelectric material P1-P3 of three different natural frequencies.The effect of the signal path selection derailing switch is each
Moment only opens the connection between signal source and corresponding piezoelectric material all the way, and closes the connection in other channels；Meanwhile according to spy
Fixed algorithm switches different signal source and the switch of corresponding piezoelectric material interface channel at random, and ultrasonic wave/mega sonic wave occurs
Dynamic change occurs for the ultrasonic wave that mechanism generates/megasonic vibration frequency.
Preferably, signal path selection derailing switch switching time interval can be controlled in several microseconds to several hundred a microseconds it
Between, guarantee that ultrasonic wave/mega sonic wave that previous signal source generates does not have time enough to complete growing up and breaking for bubble with this
Split process.
In above-mentioned solution, using multiple piezoelectric materials with different natural frequencies, respectively from different letters
The electric signal that number source generates corresponds.It in this way can be to avoid the electric signal frequency of working frequency and signal source due to piezoelectric material
Rate is inconsistent and generates energy loss.
Fig. 6 b is please referred to, shows another ultrasonic wave/megasonic frequency control unit structural principle.As shown in Figure 6 b,
Ultrasonic wave/megasonic frequency control unit is provided with a frequency converter 24-2 between signal source 23-2 and several piezoelectric materials 14
With a channel to channel adapter 24-3.In this solution, there are different intrinsic frequencies using single signal source 23-2 and three
The piezoelectric material P1-P3 of rate.The signal issued from signal source 23-2 first passes around frequency converter 24-2, and frequency converter can change signal
The frequency for the electric signal that source issues, exports the electric signal of several different frequencies, the frequencies of these electric signals is each with device end
The intrinsic frequency of piezoelectric material P1-P3 corresponds.Channel to channel adapter is connected between frequency converter and different piezoelectric materials
24-3, effect are according to the frequency of the electric signal of front end frequency converter 24-2 output, and accordingly opening has identical intrinsic frequency
Piezoelectric material P1 or P2 or P3 interface channel switch, the ultrasonic wave/mega sonic wave for generating ultrasonic wave/mega sonic wave generating mechanism
Dynamic change occurs for vibration frequency.
Preferably, frequency converter change signal frequency period distances can be controlled in several microseconds to several hundred a microseconds it
Between, there is no time enough to complete bubble come the ultrasonic wave/mega sonic wave for guaranteeing that the electric signal that previous frequency is formed generates with this
Grow up and rupture process.Similarly, channel to channel adapter is after frequency converter completes a frequency transformation, it is also desirable to switch immediately
To corresponding channel, namely the switching time interval for requiring frequency converter and channel to channel adapter to need that there is same number grade, ability
It effectively realizes dynamic and changes the purpose for cleaning ultrasonic wave/megasonic frequency used.
Please referring to Fig. 7 a- Fig. 7 e, Fig. 7 a- Fig. 7 e is the piezoelectric material with different natural frequencies in the embodiment of the present invention
Several integrated state schematic diagrames.The above-mentioned piezoelectric material P1-P3 with different natural frequencies, in actual ultrasonic wave/million sound
It is combined in wave cleaning device, needs for the piezoelectric material with different natural frequencies to be integrated into an entirety.Tool
The Integration Mode of body can carry out various combination according to ultrasonic wave/mega sonic wave cleaning device shape.Fig. 7 a- Fig. 7 e is shown not
Several specific combinations of same piezoelectric material P1-P3, respectively when the shape of cleaning device ontology is rectangle, pros
Shape, when round or fan-shaped, piezoelectric material P1-P3 corresponding rectangle having after integrating, square, circle or fan-shaped
Combination front cross-sectional view.
Apparatus of the present invention are selectively removed portion of ultrasonic sound wave/megasonic energy, working principle can by Fig. 8 come into
One step explanation.As shown in figure 8, ultrasonic wave/mega sonic wave oscillation is generated after piezoelectric material 14 receives electric signal, ultrasonic wave/
Megasonic energy is conducted to bottom quartz member 12 downwards by coupling layer 20, and further propagates to the micro- resonance of quartz downwards
On chamber array 10.For ultrasonic wave/megasonic energy in quartzy microresonator internal communication, the direction of propagation is vertical with crystal column surface
Ultrasonic wave/megasonic energy B can be reached smoothly in the cleaning medical fluid layer 29 on 30 surface of wafer, drive cleaning medical fluid oscillation, real
Now remove the purpose of pollutant.And ultrasonic wave/megasonic energy A of the direction of propagation and crystal column surface out of plumb can be micro- total in quartz
Refraction and reflection occurs on the side wall of vibration chamber 10, in this process, part energy is consumed to thermal energy or other forms are released
It puts.After multiple refraction and reflection on the side wall in quartzy microresonator, the direction of propagation is super with crystal column surface out of plumb
Sound wave/megasonic energy A is gradually depleted, and is realized and is only retained the direction of propagation ultrasonic wave/mega sonic wave energy vertical with crystal column surface
The purpose of B is measured, to can guarantee in ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause figure
The damage of crystal column surface figure structure 30 '.
Therefore, the ultrasonic wave/megasonic energy transferred out from ultrasonic wave/mega sonic wave generating mechanism piezoelectric material, through stone
After the selective removal of English microresonator, by submerging the lower end for cleaning the rodlike quartz construction in medical fluid on figure wafer,
Can vertical conduction to figure crystal column surface, to carry out the mobile cleaning of ultrasonic wave/mega sonic wave under the drive of spray arm.Together
When, the ultrasonic wave/megasonic frequency control unit replaces single signal source by using multiple signal sources, or uses and change
Become the signal frequency that single signal source issues, to form the electric signal of several different frequencies, and respectively corresponds one and its frequency
The mode of the consistent piezoelectric material of rate only makes a kind of piezoelectric material of intrinsic frequency work at each moment, and in each piezoelectricity
Switch at random between material, the ultrasonic wave/megasonic frequency dynamic change for generating ultrasonic wave/mega sonic wave generating mechanism, in this way
It can prevent from stablizing the generation interfered；Also, since the frequency of sound wave generated when the work of different piezoelectric materials changes, sound
The wavelength of wave will also change therewith, and the limit of rupture has not been reached yet in the bubble that previous sound wave generates during growing up
When, the frequency of sound wave has switched, and new bubble is generated in another position, and original bubble then further will not grow up and break
It splits；In such cyclic process, with the continuous variation of frequency of sound wave, bubble is constantly be generated and disappears, but not occurs
Rupture, the cavitation effect that can prevent bubbles burst from generating cause the damage of crystal column surface fine pattern structure.
Process corresponding with said combination formula multi-frequency ultrasonic wave/mega sonic wave cleaning device is as follows:
Connection ultrasonic wave/mega sonic wave signal generator, power amplifier, the external circuits such as impedance matching box are clear with this first
Cleaning device sets ultrasonic wave/mega sonic wave working frequency and power；Set ultrasonic wave/megasonic frequency control unit signal path
Select the time interval of derailing switch switching or period distances/corresponding channel to channel adapter of frequency converter change signal frequency
Switch to the switching time interval of respective channel.
Then spray arm swinging track is set, medicinal liquid flow, temperature are cleaned, cleans medical fluid conduit positions, scavenging period is cold
But the parameters such as gap of throughput and the cleaning device and wafer realize ultrasonic wave/megasonic energy in the equal of crystal column surface
Even covering.
Then operation cleaning menu after piezoelectric material receives electric signal, occurs high frequency telescopic deformation, forms ultrasound
Wave/mega sonic wave oscillation；The oscillation energy is conducted via coupling layer to bottom of device quartz member downwards；Ultrasonic wave/million sound
After wave energy is propagated via quartzy microresonator, the direction of propagation ultrasonic wave/mega sonic wave vertical with crystal column surface is only remained
Energy, and further in conduction downwards to cleaning medical fluid layer.
At this point, it is vertical with crystal column surface to only exist the direction of propagation in cleaning medical fluid, namely longitudinal with crystal column surface figure
The parallel vibrational energy in direction.The energy drives cleaning liquid vibration, and the pollutant accelerated between crystal column surface figure is detached from crystalline substance
Circular surfaces and the process of outside mass transfer improve the removal efficiency of crystal column surface pollutant, shorten the cleaning process time.Together
When, after the propagation of microresonator array quartzy on bottom of device quartz member, the direction of propagation and crystal column surface out of plumb
Ultrasonic wave/megasonic energy be removed.Therefore, there is no the transverse directions for crystal column surface figure structure in cleaning medical fluid layer
Shearing force, while also eliminating the stabilization interference effect of sound wave and controlling the generation of cavitation erosion conscientiously, therefore can be effective
Graphic structure is protected on ground, realizes the not damaged cleaning of figure wafer.
Current monolithic cleaning equipment mainly by the surface high-speed rotating wafer (wafer) jet cleaning liquid come
Achieve the purpose that cleaning.In the process of cleaning, wafer is by the multiple hold assemblies clamping being mounted on round chuck main body, folder
Holding component holds wafer to carry out high speed rotation.Meanwhile in the top of wafer, cleaning equipment is additionally provided with spray arm, can pass through
Spray arm is to crystal column surface jet cleaning medium.
In chemical liquid and ultrapure water cleaning process, crystal column surface material is easier to be damaged or occur some chemistry
Reaction.For example, first passing through spray arm in DHF cleaning process to crystal column surface and spraying DHF, by the autoxidation of crystal column surface
Layer erodes completely；Then injection ultrapure water is rinsed crystal column surface, by the residual liquor and reaction product of crystal column surface
It washes out；Finally, passing through injection N again2Crystal column surface is dried and completes entire technical process.In this process, wafer table
The naked silicon materials in face are very easy to react with the oxygen in processing chamber, generate silica, lead to crystal column surface material
It changes, subsequent technique is impacted.Therefore, it is necessary in technical process, to the oxygen content in entire chamber into
Row control.
On the other hand, in wafer N2In drying process, if technology controlling and process obtain it is bad, can crystal column surface occur
Watermark (washmarking) defect.The dominant mechanism that Watermark is formed is in N2In drying process, because drying is incomplete and residual
It is remaining that the SiO for reacting and generating with oxygen has been incorporated in the water of crystal column surface2, and it is further formed H2SiO3Or HSiO3Precipitating.
After the water volatilization of crystal column surface, these precipitatings form the washmarking of flat condition.In addition, in above-mentioned cleaning process, it is also frequent
Occur having the unseasoned thorough phenomenon of drop on crystal round fringes rib, this also results in wafer cleaning quality certain influence.
Therefore, it is necessary to optimize to drying process, being completely dried for whole wafer range is realized.
Further improvement of the present invention point is the function that gas shield is realized on the basis of the not damaged cleaning of figure wafer.
In technical process, form a gas blanket above wafer using protective gas, protective gas can be nitrogen or
The inert gases such as argon gas.The advantage that be: (1) in technical process, make wafer and oxygen-barrier, prevent crystal column surface silicon material
Material is oxidized；It (2) in the drying process,, can when wafer high speed rotation since wafer is completely under the covering of protective gas
Preferably to realize the drying of whole wafer range, the generation of washmarking defect is prevented, can also preferably realize crystal round fringes
It is dry.
The mode that the realization of gas protecting function can take following two different.
Fig. 9 and Figure 10 are please referred to, Fig. 9 is that one of one embodiment of the invention has the combined type of gas shield effect more
Frequency ultrasonic wave/mega sonic wave cleaning device structure sectional view；Figure 10 is the outline structural diagram of Fig. 9.Such as Fig. 9 and Figure 10 institute
Show, combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device cooling gas itself can be used as protective gas.On device
Shell 15 is equipped with cooling gas inlet 25, the co-portal as cooling gas and protective gas；It is leaned in the side wall of lower case 22
At nearly bottom surface, the slit that one ring shape of processing has a down dip, or be also possible to a circle stomata, as cooling gas and protective gas
Conjoint outlet 26 '.Cooling gas is entered inside cleaning device by gas access 25, i.e., by sealing cavity wall and ultrasonic wave/million sound
The cooling chamber of wave generating mechanism outer wall composition after completing to the cooling of piezoelectric material and coupling layer, is sprayed from a circle gas vent 26 '
Out, while in crystal column surface a gas blanket is formed, controls the oxygen content in cleaning process process middle chamber, prevents crystalline substance
Circle reacts with the oxygen in air.In drying process, cooling gas is stayed open, and is played injecting protective gas and is realized crystalline substance
The dry purpose of circular surfaces can replace the spray arm of the individual jet drying gas of tradition, keep cleaning equipment chamber structure simple
Change.When dry, the cleaning device with gas shield can be fixed on crystal circle center's injection, can also be under the drive of spray arm
It is sprayed in crystal column surface along arc swing.
Figure 11 and Figure 12 are please referred to, Figure 11 is the combination that one of another embodiment of the present invention has gas shield effect
Formula multi-frequency ultrasonic wave/mega sonic wave cleaning device structure sectional view；Figure 12 is the outline structural diagram of Figure 11.Such as Figure 11 and
Shown in Figure 12, another implementation of gas protecting function is to be passed through protection using an individual gas atmosphere inlet 31
Gas.Equally, the slit either circle gas that an annular has a down dip is processed close to the position of bottom surface in the side wall of device lower case
Hole, the outlet 32 as protective gas.It is passed through protective gas by gas atmosphere inlet 31, and by 32 spray of protective gas outlet
Out, a gas blanket can be formed in crystal column surface, so that the oxygen content in chamber is controlled, and in drying process,
The volume drying of crystal column surface is better achieved.
Effect around the quartzy microresonator guard circle of the annular of quartzy microresonator array setting is in bottom quartz portion
The installation of part, debugging in test process, can hold cyclic annular quartzy microresonator guard circle, it is weaker to avoid direct contact with intensity
Rodlike quartz construction, cause the damage of rodlike quartz construction.Meanwhile quartzy microresonator guard circle also needs to guarantee cleaning medical fluid
It can free in and out, and full of the gap between quartzy microresonator array and crystal column surface, enable ultrasonic wave/megasonic energy
It is enough effectively transmitted in the cleaning medical fluid thin layer of crystal column surface.
When the height of quartzy microresonator guard circle is consistent with the height of quartzy microresonator array, figure wafer without
When damaging cleaning device work, device has a certain distance apart from crystal column surface, and cleaning medical fluid can enter the micro- resonance of quartz
In the gap of chamber and crystal column surface.But due to the effect of surface tension of liquid, the replacement result for cleaning medical fluid can be poor, shadow
The exchange process for ringing new, old medical fluid, causes cleaning effect poor.
As the scheme advanced optimized can there are many, for example, quartzy microresonator can be made as shown in Fig. 2-Fig. 3
The lower end surface height of guard circle 11 is slightly less than the lower end surface height of quartzy microresonator array 10, in order to clean medical fluid disengaging stone
Gap between English microresonator array and crystal column surface.But in this prioritization scheme, the bottom surface of quartzy microresonator array is low
It is poor for the protecting effect of quartzy microresonator in the bottom surface of quartzy microresonator guard circle.
Therefore, it can be optimized with further progress, such as make the height and quartz microresonator of quartzy microresonator guard circle
The height of array is consistent, but the aperture of specific shape is provided in the recess sidewall of guard circle, keeps cleaning medical fluid free
Pass in and out the gap between quartzy microresonator array and crystal column surface.Some embodiments include: as shown in figure 13, quartzy micro- total
Rectangular aperture 11 ' is provided in the recess sidewall of vibration chamber guard circle 11；Or rectangle aperture can be used into arch aperture
And other forms gate-shaped or window-like aperture substituted.
As other improvements, in quartzy microresonator array the shape of rodlike quartz construction may include round and its
Its some shapes, such as triangle, pentagon, the solid bars structure such as rectangle.Meanwhile the arrangement of each rodlike quartz construction can
To be distributed according to certain rules, can also be distributed with completely random, to prevent locking apparatus with spray arm swing when in specific region shape
At the higher region of energy, keep ultrasonic wave/mega sonic wave Energy distribution more uniform.For example, being this hair as shown in figure 14
The bottom quartz member of the quartzy 10 rodlike quartz construction of triangle with regular distribution of microresonator array in a bright embodiment
Schematic diagram.It again as shown in figure 15, is that quartzy microresonator array 10 is arranged with random distribution in one embodiment of the invention
The bottom quartz member schematic diagram of the rodlike quartz construction of rectangle.
Cleaning device shape can be optimized, i.e., as alternatively improved point for the cleaning efficiency for improving cleaning device
Ontology monnolithic case including ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member is optimized, to improve cleaning
The area coverage of device.For example, the horizontal profile of ontology may be designed to sector, triangle, pentagon either strip
(side) shape, i.e., so that the lower end facial contour of ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member forms sector, triangle, five
Side shape either strip (side) shape；Further such that piezoelectric material and coupling layer, cyclic annular quartzy microresonator guard circle and quartz
The lower end facial contour of microresonator array forms sector, triangle, pentagon either strip (side) shape.For example, such as Figure 16 institute
Show, is the cleaning device schematic diagram in one embodiment of the invention with fan-shaped shape quartz microresonator array 10, the device
In can have fan-shaped piezoelectric material and coupling layer, the quartzy microresonator guard circle of ring-type of sector and quartzy microresonator battle array
Column, upper-lower casing can be assembled by upper-lower casing fixation hole 33.This apparatus structure can be covered from wafer center of circle the to wafer
One fan-shaped region at edge, guarantee that the crystal column surface in the region can be cleaned simultaneously, improves cleaning efficiency with this,
Improve cleaning uniformity.It again as shown in figure 17, is that there is the micro- resonance of strip (side) shape shape quartz in one embodiment of the invention
The cleaning device schematic diagram of chamber array 10 can have the piezoelectric material of strip and the ring-type of coupling layer, strip in the device
Quartzy microresonator guard circle and quartzy microresonator array, it is one long from wafer center of circle the to crystal round fringes so as to cover
Bar-shaped zone.
In conclusion the present invention passes through in combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device ontology hollow housing
Interior ultrasonic wave of the setting based on piezoelectric material/mega sonic wave generating mechanism generates sonic oscillation, and is occurred by ultrasonic wave/mega sonic wave
The quartzy microresonator array submerged in wafer supernatant wash liquid connected below mechanism, the direction of propagation is not hung down with crystal column surface
Straight ultrasonic wave/megasonic energy carries out selective removal, makes ultrasonic wave/megasonic energy vertical conduction to wafer, ensure that
In ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause the damage of figure crystal column surface figure,
To realize the mobile cleaning of the not damaged ultrasonic wave to figure wafer/mega sonic wave.Meanwhile passing through ultrasonic wave/megasonic frequency control
Unit processed constantly changes the frequency of the signal source output electric signal passed through near the intrinsic frequency of piezoelectric material, makes piezoelectric material
The ultrasonic wave of generation/megasonic vibration frequency dynamic variation can prevent from generating stable interference effect in cleaning medical fluid, and
The cavitation effect that can prevent bubbles burst from generating causes the damage of crystal column surface fine pattern structure.
Said combination formula multi-frequency ultrasonic wave/mega sonic wave cleaning device of the invention has the advantage that
1) it by rationally designing the quartzy microresonator array structure of bottom quartz member, realizes and removes on other directions
Ultrasonic wave/megasonic energy only retains the direction of propagation ultrasonic wave/megasonic energy mesh vertical with crystal column surface to be cleaned
, guarantee in ultrasonic wave/mega sonic wave cleaning process, ultrasonic wave/mega sonic wave energy not will cause figure crystal column surface figure
Damage；
2) in ultrasonic wave/mega sonic wave cleaning process, single signal source is replaced by using multiple signal sources, or adopt
With change single signal source issue signal frequency, to form the electric signal of several different frequencies, and respectively correspond one with
The consistent piezoelectric material of its frequency only makes a kind of piezoelectric material of intrinsic frequency work at each moment, and in each piezoresistive material
Switch at random between material, the ultrasonic wave/megasonic frequency dynamic change for generating ultrasonic wave/mega sonic wave generating mechanism in this way may be used
To prevent from stablizing the generation interfered；Simultaneously as the frequency of sound wave generated when different piezoelectric material work changes, sound wave
Wavelength will also change therewith, when the limit of rupture has not been reached yet in the bubble that previous sound wave generates during growing up,
The frequency of sound wave has switched, and new bubble is generated in another position, and original bubble then further will not grow up and rupture；
In such cyclic process, with the continuous variation of frequency of sound wave, bubble is constantly be generated and disappears, but not occurs broken
It splits, the cavitation effect that can prevent bubbles burst from generating causes the damage of crystal column surface fine pattern structure；
3) shape of the rodlike quartz construction of quartzy microresonator array may include round and some other shapes, such as
Triangle, pentagon, rectangle etc.；Meanwhile the arrangement of each rodlike quartz construction can be distributed according to certain rules, it can also be with
Completely random distribution forms the higher region of energy in specific region when to prevent locking apparatus with spray arm swing, makes ultrasonic wave/million
The Energy distribution of sound wave is more uniform；
4) it is provided with aperture on cyclic annular quartzy microresonator guard circle, can makes to clean the quartzy microresonator of medical fluid free entry and exit
Gap between array and figure crystal column surface improves cleaning medicine to eliminate the surface tension effects of crystal column surface cleaning medical fluid
The replacement result of liquid accelerates the exchange process of new, old medical fluid, improves the effect of cleaning；
5) device may be designed to fan-shaped, triangle, and the covering surface of device can be improved in pentagon either strip
Product, so as to improve the cleaning efficiency of device；
6) during cleaning process, a gas blanket is formed above wafer using protective gas, wafer can be made
With oxygen-barrier, crystal column surface silicon materials is prevented to be oxidized；In the drying process, since wafer is completely in covering for protective gas
Under lid, when wafer high speed rotation, the drying of whole wafer range can be better achieved, prevent the generation of washmarking defect,
The drying of crystal round fringes can be better achieved.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device characterized by comprising
Ontology, hollow inside are equipped with ultrasonic wave/mega sonic wave generating mechanism and bottom quartz member, the ultrasonic wave/million sound
Wave generating mechanism is equipped with several piezoelectric materials, and each piezoelectric material has different intrinsic frequencies, and uniform combination is together
Entirety, described this external signal source of piezoelectric material connection are formed, the bottom quartz member is equipped with by multiple vertical rodlike stones
The quartzy microresonator array of English structure composition, the quartz microresonator array are stretched out from the opening of the ontology lower end surface；
Ultrasonic wave/megasonic frequency control unit, be connected between signal source and piezoelectric material, for control by formation with
Each one-to-one signal source output electric signal of piezoelectric material intrinsic frequency imports corresponding each piezoelectric material at random；
Wherein, the piezoelectric material receives electric signal and generates ultrasonic energy, conducts downwards through bottom quartz member, and through quartz
After the selective removal of microresonator array, by submerging the quartzy microresonator array in figure wafer supernatant wash liquid
Lower end surface vertical conduction to figure crystal column surface, drive cleaning medical fluid oscillation, to carry out the mobile cleaning of ultrasonic wave/mega sonic wave,
Meanwhile the electric signal of different frequency is imported by corresponding piezoresistive material by the ultrasonic wave/megasonic frequency control unit at random
Material, the ultrasonic wave for generating ultrasonic wave/mega sonic wave generating mechanism/megasonic vibration frequency dynamic variation, to prevent in cleaning medicine
Stable interference effect and bubbles burst phenomenon are generated in liquid.
2. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 1, which is characterized in that described super
Sound wave/megasonic frequency control unit includes that a signal path selects derailing switch, and the signal path selection derailing switch is set to
Between the equal several signal sources of quantity and piezoelectric material, each signal source respectively corresponds one and exports signal frequency one with it
The piezoelectric material of cause, signal path selection derailing switch each moment only open all the way signal source and corresponding piezoelectric material it
Between connection, and switch different signal source and the switch of corresponding piezoelectric material interface channel at random, make ultrasonic wave/mega sonic wave hair
The ultrasonic wave that life structure generates/megasonic vibration frequency dynamic variation.
3. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 1, which is characterized in that described super
Sound wave/megasonic frequency control unit includes a frequency converter being sequentially arranged between signal source and several piezoelectric materials and one
Channel to channel adapter changes the signal frequency of signal source output, by the frequency converter to export the telecommunications of several different frequencies
Number, and corresponded with the intrinsic frequency of each piezoelectric material, the channel to channel adapter is according to the electric signal of frequency converter random output
Frequency, the interface channel for opening respective frequencies piezoelectric material switch, and the ultrasonic wave for generating ultrasonic wave/mega sonic wave generating mechanism/
The variation of megasonic vibration frequency dynamic.
4. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 1, which is characterized in that described
Body specifically includes:
Upper and lower casing, connection form the hollow sealing chamber of ontology, and the seal chamber forms opening in the lower end surface of lower case；
Ultrasonic wave/mega sonic wave generating mechanism is set in seal chamber, piezoelectric material and coupling layer including being close to setting up and down, institute
It states coupling layer lower part and is close to bottom quartz member top, the piezoelectric material, coupling layer and bottom quartz member pass through in upper casing
Holddown spring and holddown spring guide post successively set between piezoelectric material are compressed at the top of body, the coupling layer side
There is gap, the upper housing is equipped with piezoelectric material binding post, uses between portion, piezoelectric material side and top and sealing cavity wall
In external electric signal is directed into piezoelectric material, and by connection coupling layer binding post forming circuit, to generate ultrasonic wave/million sound
Wave oscillation energy；
Bottom quartz member is set in seal chamber, the quartzy microresonator guard circle of ring-type for forming downwardly open groove including one,
And the quartzy microresonator array that a upper end is connected at bottom portion of groove, lower end is free end, the cyclic annular quartz are micro- total
Shake chamber guard circle top abutting coupling layer lower part, and side and seal chamber, which are located between the inner wall of lower housing section, to be tightly connected,
Its groove lower end is stretched out by the opening of lower case lower end surface, and the lower end surface of the quartz microresonator array is not higher than under groove
End face.
5. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 4, which is characterized in that on described
Shell is equipped with gas access and outlet, and connection is made of cold sealing cavity wall and ultrasonic wave/mega sonic wave generating mechanism outer wall
But chamber cools down to ultrasonic wave/mega sonic wave generating mechanism for being passed through cooling gas by gas access, and is gone out by gas
Mouth discharge.
6. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 4, which is characterized in that under described
The connection of shell side is equipped with gas atmosphere inlet and outlet, and the stomata or slit that the protective gas outlet has a down dip for a circle are used
Make to be passed through protective gas by gas atmosphere inlet, and exported and sprayed by protective gas, to form one in figure crystal column surface
Gas blanket.
7. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 4, which is characterized in that on described
Shell is equipped with gas access, and the lower case side is equipped with gas vent, and the gas vent is the stomata or narrow that a circle has a down dip
The cooling chamber that seam, the gas access and outlet are made of sealing cavity wall and ultrasonic wave/mega sonic wave generating mechanism outer wall,
For being passed through cooling gas by gas access, ultrasonic wave/mega sonic wave generating mechanism is cooled down, and passing through gas vent
While discharge diagonally downward, a gas blanket is formed in figure crystal column surface.
8. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 4, which is characterized in that the ring
The recess sidewall of shape quartz microresonator guard circle is equipped with one to several apertures, for keeping cleaning medical fluid free entry and exit quartz micro- total
The gap to shake between chamber array and figure crystal column surface.
9. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 4, which is characterized in that the stone
The shape of the rodlike quartz construction of English microresonator array includes circle, triangle, pentagon or rectangle, each rodlike quartz construction
It is distributed, or is distributed according to random fashion according to certain rules.
10. combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device according to claim 4, which is characterized in that described
The profile of body and ultrasonic wave/mega sonic wave generating mechanism, bottom quartz member is sector, triangle, pentagon either strip
Shape.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610739227.7A CN106269452B (en) | 2016-08-26 | 2016-08-26 | A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device |
| TW106100825A TWI600479B (en) | 2016-08-26 | 2017-01-11 | Ultrasonic and megasonic cleaning device |
| US15/663,667 US20180056340A1 (en) | 2016-08-26 | 2017-07-28 | Ultrasonic/megasonic cleaning device |
| SG10201706436XA SG10201706436XA (en) | 2016-08-26 | 2017-08-07 | Ultrasonic/megasonic cleaning device |
| KR1020170107473A KR101940288B1 (en) | 2016-08-26 | 2017-08-24 | Ultrasonic/mega sonic cleaning device |
| US17/020,217 US11554390B2 (en) | 2016-08-26 | 2020-09-14 | Ultrasonic/megasonic cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610739227.7A CN106269452B (en) | 2016-08-26 | 2016-08-26 | A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106269452A CN106269452A (en) | 2017-01-04 |
| CN106269452B true CN106269452B (en) | 2018-12-18 |
Family
ID=57677367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610739227.7A Active CN106269452B (en) | 2016-08-26 | 2016-08-26 | A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106269452B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110000075A (en) * | 2019-04-02 | 2019-07-12 | 苏州诺莱声科技有限公司 | A kind of ultrasonic transducer can reduce oscillation crosswise |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112371645B (en) * | 2020-10-26 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Acoustic wave cleaning device and wafer cleaning equipment |
| CN117019761B (en) * | 2023-10-10 | 2024-01-23 | 常州捷佳创精密机械有限公司 | Ultrasonic/megasonic cleaning tank |
| CN118028784B (en) * | 2024-04-09 | 2024-06-14 | 陛通半导体设备(苏州)有限公司 | Wafer heating plate and semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1099675A (en) * | 1993-02-22 | 1995-03-08 | 柴野佳英 | Method of oscillating ultrasonic vibrator for ultrasonic cleaning |
| CN101084586A (en) * | 2003-11-05 | 2007-12-05 | 顶峰集团有限公司 | Ultrasonic processing method and apparatus with multiple frequency transducers |
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
| CN105642607A (en) * | 2014-12-04 | 2016-06-08 | 重庆山朕科技发展有限公司 | Three-frequency ultrasonic washing unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5327279B2 (en) * | 2011-06-13 | 2013-10-30 | 株式会社デンソー | Ultrasonic sensor device |
-
2016
- 2016-08-26 CN CN201610739227.7A patent/CN106269452B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1099675A (en) * | 1993-02-22 | 1995-03-08 | 柴野佳英 | Method of oscillating ultrasonic vibrator for ultrasonic cleaning |
| CN101084586A (en) * | 2003-11-05 | 2007-12-05 | 顶峰集团有限公司 | Ultrasonic processing method and apparatus with multiple frequency transducers |
| CN105642607A (en) * | 2014-12-04 | 2016-06-08 | 重庆山朕科技发展有限公司 | Three-frequency ultrasonic washing unit |
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110000075A (en) * | 2019-04-02 | 2019-07-12 | 苏州诺莱声科技有限公司 | A kind of ultrasonic transducer can reduce oscillation crosswise |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106269452A (en) | 2017-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106269452B (en) | A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device | |
| CN106340477B (en) | A kind of equally distributed ultrasonic wave of energy/mega sonic wave cleaning device | |
| CN106238302B (en) | A kind of ultrasonic wave/mega sonic wave cleaning device of frequency dynamic variation | |
| TWI600479B (en) | Ultrasonic and megasonic cleaning device | |
| KR920003878B1 (en) | Surface treatment method of semiconductor substrate | |
| CN106328561B (en) | Improve the not damaged cleaning device of figure wafer of the cleaning uniformity | |
| JP2007311756A (en) | Ultrasonic cleaner and ultrasonic cleaning method | |
| JP5891085B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP6473248B2 (en) | Substrate cleaning apparatus, substrate processing apparatus, and substrate cleaning method | |
| CN106345721B (en) | A kind of not damaged ultrasonic wave of figure wafer/mega sonic wave cleaning device | |
| WO2007063962A1 (en) | Substrate processing apparatus | |
| JP2002079177A (en) | Ultrasonic vibrator, nozzle for wet treatment and wet treatment apparatus | |
| JPH11156314A (en) | Washing apparatus and washing of precision substrate | |
| JP6940281B2 (en) | Substrate processing equipment and substrate processing method | |
| KR102637827B1 (en) | Substrate procesing system | |
| JP2930583B1 (en) | Spin wafer single wafer processing equipment | |
| JPH0964000A (en) | Dry cleaning device | |
| CN211217793U (en) | Cleaning device for cleaning large-size quartz wafers | |
| CN114871199B (en) | Multi-frequency megasonic wave coupling wafer cleaning equipment and multi-frequency injection device | |
| JP2009032710A (en) | Substrate processing apparatus | |
| CN114536213B (en) | Apparatus for cleaning polishing pad and polishing device | |
| JP3565690B2 (en) | Closed-type cleaning apparatus and method for cleaning precision substrate using this apparatus | |
| JP3927936B2 (en) | Single wafer cleaning method and cleaning apparatus | |
| JPH04213826A (en) | Wafer washing unit for manufacture of semiconductor | |
| JP3792473B2 (en) | Method for forming semiconductor thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: No.1 Jiuxianqiao East Road, Chaoyang District, Beijing 100016 Patentee before: BEIJING SEVENSTAR ELECTRONICS Co.,Ltd. |
|
| CP03 | Change of name, title or address |