CN106269452A - A kind of combination type multi-frequency ultrasound wave/mega sonic wave cleans device - Google Patents
A kind of combination type multi-frequency ultrasound wave/mega sonic wave cleans device Download PDFInfo
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- CN106269452A CN106269452A CN201610739227.7A CN201610739227A CN106269452A CN 106269452 A CN106269452 A CN 106269452A CN 201610739227 A CN201610739227 A CN 201610739227A CN 106269452 A CN106269452 A CN 106269452A
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- ultrasound wave
- wave
- mega sonic
- piezoelectric
- frequency
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- 238000002604 ultrasonography Methods 0.000 title claims abstract description 175
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 159
- 239000010453 quartz Substances 0.000 claims abstract description 157
- 239000013078 crystal Substances 0.000 claims abstract description 85
- 230000007246 mechanism Effects 0.000 claims abstract description 49
- 230000008859 change Effects 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims description 74
- 239000007789 gas Substances 0.000 claims description 71
- 239000007788 liquid Substances 0.000 claims description 42
- 230000008878 coupling Effects 0.000 claims description 35
- 238000010168 coupling process Methods 0.000 claims description 35
- 238000005859 coupling reaction Methods 0.000 claims description 35
- 238000010276 construction Methods 0.000 claims description 26
- 230000000694 effects Effects 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000000112 cooling gas Substances 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 13
- 230000011664 signaling Effects 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 5
- 230000008676 import Effects 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 239000003814 drug Substances 0.000 claims description 3
- 239000006228 supernatant Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 description 136
- 235000012431 wafers Nutrition 0.000 description 55
- 238000000034 method Methods 0.000 description 40
- 230000008569 process Effects 0.000 description 35
- 239000010410 layer Substances 0.000 description 33
- 239000007921 spray Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 230000006378 damage Effects 0.000 description 17
- 239000003344 environmental pollutant Substances 0.000 description 10
- 231100000719 pollutant Toxicity 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000002305 electric material Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000010356 wave oscillation Effects 0.000 description 2
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012913 prioritisation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/50—Application to a particular transducer type
- B06B2201/55—Piezoelectric transducer
Abstract
nullThe invention discloses a kind of combination type multi-frequency ultrasound wave/mega sonic wave and clean device，Including body and ultrasound wave/megasonic frequency control unit，Basis is the most internal is provided with ultrasound wave/mega sonic wave generating mechanism and bottom quartz member，Ultrasound wave/mega sonic wave generating mechanism is provided with some piezoelectrics having different natural frequencies and being combined as entirety，Bottom quartz member is provided with quartz microresonator array，The quartz microresonator array opening from body lower surface stretches out，Ultrasound wave/megasonic frequency control unit is connected between signal source and piezoelectric，By quartz microresonator array, the direction of propagation and crystal column surface direction off plumb ultrasound wave/megasonic energy can be carried out selective removal，And by ultrasound wave/megasonic frequency control unit, the signal of telecommunication of different frequency is imported at random the piezoelectric of correspondence，Make ultrasound wave/megasonic vibration frequency dynamic change that ultrasound wave/mega sonic wave generating mechanism produces，Realize the not damaged to figure wafer to clean.
Description
Technical field
The present invention relates to semiconductor integrated circuit processing cleaning equipment field, more particularly, to one by having
The piezoelectric of different natural frequencies combines the ultrasound wave/mega sonic wave of composition and cleans device, it is achieved to figure wafer
Not damaged ultrasound wave/mega sonic wave cleans.
Background technology
Along with the high speed development of semiconductor integrated circuit manufacturing technology, the pattern character size of IC chip has been enter into
To the deep-submicron stage, and cause the feature chi of the crucial pollutant (such as granule) of superfine circuit malfunction or damage on chip
Very little greatly reduce the most therewith.
During the production and processing technology of integrated circuit, semiconductor crystal wafer the most all can be through such as thin film deposition, quarter
The multiple tracks processing steps such as erosion, polishing.And these processing steps just become the important place that pollutant produces.In order to keep wafer table
The clean conditions in face, eliminates the pollutant being deposited on crystal column surface in each processing step, it is necessary to subjected to per pass technique
Wafer after step is carried out processing.Therefore, cleaning becomes most common processing step in integrated circuit fabrication process,
Its object is to efficiently control the contamination level of each step, to realize the target of each processing step.
In order to effectively remove the pollutant of crystal column surface, when carrying out single-wafer wet clean process, wafer will
It is placed on the rotation platform (such as rotary chuck) of cleaning equipment, and rotates according to certain speed；Simultaneously to wafer
The chemical liquid of surface spraying certain flow, is carried out crystal column surface.
Remove while pollutant purpose being reached by cleaning, it is most important that ensure to wafer, especially for
The not damaged of figure crystal column surface figure cleans.
Along with reducing of integrated circuit pattern characteristic size, the removal difficulty of the smaller size of pollutant of crystal column surface is the most not
Disconnected increasing.A lot of Novel washing technology are applied on cleaning equipment.Wherein, most important one is ultrasound wave/million sound
Ripple cleaning technique.But, use ultrasound wave/mega sonic wave cleaning technique while improve pollutant removal efficiency, also can not
Bring the damage problem for figure wafer with avoiding.This is ultrasonic with crystal column surface off plumb mainly due to the direction of propagation
Ripple/megasonic energy is more than the adhesive force of surfacial pattern and wafer to the active force that figure crystal column surface figure is horizontal, causes
Destruction to surfacial pattern when ultrasound wave/mega sonic wave cleans.
Meanwhile, existing ultrasound wave/mega sonic wave cleaning technique, is by the signal of telecommunication with single-frequency is directed into pressure
Electric material so that it is produce stretching vibration at a high speed, thus produce ultrasound wave/mega sonic wave oscillation energy and carry out wafer cleaning.?
In ultrasound wave/mega sonic wave cleaning process, acoustic wave energy is in the contact of the upper surface of wafer, lower surface, and some different mediums
Face all can produce refraction and launch, these refractions and the sound wave of reflection and the single-frequency sound wave sent from piezoquartz oscillator
Interference can cause the energy of regional area too strong, causes the damage of crystal column surface fine pattern structure.
On the other hand, ultrasound wave/mega sonic wave produces in cleansing medium cavitation erosion and direct flow all can accelerate particle contamination
Thing is from the disengaging process of wafer surface, it is achieved the raising of cleaning efficiency.But, for practical experience the most in the industry, cavitation erosion
The bubble that effect produces constantly is grown up, and the size finally rupturing brought physical energy is difficult to control to, it is easy to cause wafer
The damage of surface fine graphic structure.Thus row those skilled in the art be more desirable to utilize that direct flow effect realizes wafer is lossless
Wound is cleaned.
Accordingly, it would be desirable to use the technological means that some are new to control the generation of cavitation erosion, clear to realize more excellent wafer not damaged
Wash.
Summary of the invention
It is an object of the invention to the drawbacks described above overcoming prior art to exist, it is provided that a kind of combination type multi-frequency is ultrasonic
Ripple/mega sonic wave cleans device, when wafer carrying out ultrasound wave/mega sonic wave and cleaning, it is possible to eliminate the direction of propagation and crystal column surface
Off plumb ultrasound wave/the megasonic energy damaging influence to figure crystal column surface figure horizontal force, it is possible to make to surpass
The ultrasound wave that sound wave/mega sonic wave generating mechanism produces/megasonic vibration frequency dynamic change, to prevent from producing in cleaning medicinal liquid
Stable interference effect and bubbles burst phenomenon, control the generation of cavitation erosion, it is achieved cleans the not damaged of figure wafer.
For achieving the above object, technical scheme is as follows:
A kind of combination type multi-frequency ultrasound wave/mega sonic wave cleans device, including:
Body, the inside of its hollow is provided with ultrasound wave/mega sonic wave generating mechanism and bottom quartz member, described ultrasound wave/
Mega sonic wave generating mechanism is provided with some piezoelectrics, and each described piezoelectric has different natural frequencies, and uniform combination exists
Forming entirety together, described piezoelectric connects the signal source that this is external, and described bottom quartz member is provided with by multiple vertical bars
The quartzy microresonator array of shape quartz construction composition, the described quartz microresonator array opening from described body lower surface is stretched
Go out；
Ultrasound wave/megasonic frequency control unit, is connected between signal source and piezoelectric, is used for controlling to be formed
With each piezoelectric natural frequency signal source one to one output the signal of telecommunication import corresponding each piezoelectric at random；
Wherein, described piezoelectric receives the signal of telecommunication and produces ultrasonic energy, and through bottom, quartz member conducts downwards, and warp
After the selective removal of quartz microresonator array, by the described quartz microresonator in figure wafer supernatant wash liquid that submerges
The lower surface vertical conduction of array to figure crystal column surface, drives and cleans medicinal liquid vibration, moves clearly carrying out ultrasound wave/mega sonic wave
Wash, meanwhile, by described ultrasound wave/megasonic frequency control unit, the signal of telecommunication of different frequency is imported at random the piezoelectricity of correspondence
Material, makes ultrasound wave/megasonic vibration frequency dynamic change that ultrasound wave/mega sonic wave generating mechanism produces, to prevent from cleaning
Medicinal liquid produces stable interference effect and bubbles burst phenomenon.
Preferably, described ultrasound wave/megasonic frequency control unit includes that a signalling channel selects derailing switch, described letter
Number channel selector switch device is located between some signal sources and the piezoelectric that quantity is equal, the most corresponding one of each signal source
Export the piezoelectric that signal frequency is consistent with it, described signalling channel selects derailing switch only to open a road letter in each moment
Connection number between source with corresponding piezoelectric, and switch opening of different signal sources and corresponding piezoelectric interface channel at random
Close, make ultrasound wave/megasonic vibration frequency dynamic change that ultrasound wave/mega sonic wave generating mechanism produces.
Preferably, described ultrasound wave/megasonic frequency control unit includes being sequentially arranged in signal source and some piezoelectrics
Between a converter and a channel to channel adapter, by described converter change signal source output signal frequency, with
Export the signal of telecommunication of some different frequencies, and with the natural frequency one_to_one corresponding of each piezoelectric, described channel to channel adapter according to
The signal frequency that converter exports at random, opens the interface channel switch of respective frequencies piezoelectric, makes ultrasound wave/mega sonic wave
The ultrasound wave that generating mechanism produces/megasonic vibration frequency dynamic change.
Preferably, described body specifically includes:
Upper and lower casing, its connection forms the hollow sealing chamber of body, and described annular seal space is formed in the lower surface of lower house and opens
Mouthful；
Ultrasound wave/mega sonic wave generating mechanism, is located in annular seal space, including piezoelectric and the coupling of being close to setting up and down
Layer, quartz member top, bottom is close in described coupling layer bottom, and described piezoelectric, coupling layer and bottom quartz member pass through
Holddown spring set successively between upper shell top and piezoelectric and holddown spring lead compress, described coupling layer
There is between sidepiece, piezoelectric sidepiece and top and annular seal space inwall gap, described upper shell equipped with piezoelectric binding post,
For external electric signal being directed into piezoelectric, and form loop by connecting coupling layer binding post, to produce ultrasound wave/million
Sonication energy；
Bottom quartz member, is located in annular seal space, and the ring-type quartz microresonator including a downwardly open groove of formation is protected
Guard ring, and the quartzy microresonator array that upper end is connected at bottom portion of groove, lower end is free end, described ring-type quartz
Coupling layer bottom is close on microresonator guard circle top, and its sidepiece and annular seal space be the company of sealing between the inwall of lower housing section
Connecing, its groove lower end is stretched out by the opening of lower house lower surface, and the lower surface of described quartz microresonator array is not higher than groove
Lower surface.
Preferably, described upper shell is provided with gas access and outlet, and its connection is by annular seal space inwall and ultrasound wave/mega sonic wave
The cooling chamber of generating mechanism outer wall composition, for being passed through cooling gas by gas access, to ultrasound wave/mega sonic wave generating mechanism
Cool down, and discharged by gas outlet.
Preferably, the connection of described lower house sidepiece is provided with gas atmosphere inlet and outlet, and the outlet of described protective gas is one
The pore that has a down dip of circle or slit, be used as to be passed through protective gas by gas atmosphere inlet, and by protective gas outlet ejection, with
Figure crystal column surface forms a gas blanket.
Preferably, described upper shell is provided with gas access, and described lower house sidepiece is provided with gas outlet, described gas outlet
It is the pore that has a down dip of a circle or slit, described gas access and outlet are occurred by annular seal space inwall and ultrasound wave/mega sonic wave
The cooling chamber of mechanism's outer wall composition, for being passed through cooling gas by gas access, is carried out ultrasound wave/mega sonic wave generating mechanism
Cooling, and while being discharged diagonally downward by gas outlet, form a gas blanket at figure crystal column surface.
Preferably, the recess sidewall of described ring-type quartz microresonator guard circle is provided with one to some perforates, is used for making clear
Wash liquid frees in and out the gap between quartz microresonator array and figure crystal column surface.
Preferably, described quartz the bar-shaped quartz construction of microresonator array shape include circle, triangle, pentagon or
Rectangle, each bar-shaped quartz construction is according to certain regular distribution, or is distributed according to random fashion.
Preferably, the profile of described body and ultrasound wave/mega sonic wave generating mechanism, bottom quartz member be fan-shaped, three
Dihedral, pentagon or strip.
The invention have the advantages that
1) by the quartzy microresonator array structure of quartz member bottom appropriate design, it is achieved remove on other direction
Ultrasound wave/megasonic energy, only retains the mesh of the direction of propagation ultrasound wave/megasonic energy vertical with crystal column surface to be cleaned
, it is ensured that in ultrasound wave/mega sonic wave cleaning process, the energy of ultrasound wave/mega sonic wave does not results in figure crystal column surface figure
Damage；
2) in ultrasound wave/mega sonic wave cleaning process, by using multiple signal sources to replace single signal source, or adopt
With changing the signal frequency that sends of single signal source, to form the signal of telecommunication of several different frequency, and the most corresponding one with
The piezoelectric that its frequency is consistent, only makes the piezoelectric of a kind of natural frequency work in each moment, and in each piezoresistive material
Switching at random between material, the ultrasound wave/megasonic frequency making ultrasound wave/mega sonic wave generating mechanism produce dynamically changes, and so may be used
To prevent the generation of stable interference；Simultaneously as the frequency of sound wave produced during different piezoelectric work changes, its sound wave
Wavelength also will change therewith, the bubble that previous sound wave produces is when being also not reaching to the limit ruptured during growing up,
The frequency of sound wave has switched, and new bubble produces in another position, and original bubble then will not be grown up further and rupture；
In such cyclic process, along with being continually changing of frequency of sound wave, bubble is constantly be generated and disappears, but will not break
Splitting, the cavitation effect being possible to prevent bubbles burst to produce causes the damage of crystal column surface fine pattern structure；
3) shape of the quartz bar-shaped quartz construction of microresonator array can include circular and some other shape, such as
Triangle, pentagon, rectangle etc.；Meanwhile, the arrangement of each bar-shaped quartz construction can be according to certain regular distribution, it is also possible to
Completely random is distributed, in case form the region that energy is higher with spray arm when locking apparatus swings in specific region, makes ultrasound wave/million
The Energy distribution of sound wave is the most uniform；
4) on ring-type quartz microresonator guard circle, have perforate, cleaning medicinal liquid can be made to free in and out quartz microresonator
Gap between array and figure crystal column surface, to eliminate the surface tension effects of crystal column surface cleaning medicinal liquid, improves and cleans medicine
The replacement result of liquid, accelerates the exchange process of medicinal liquid new, old, improves the effect cleaned；
5) device may be designed so that sector, triangle, pentagon or strip, can improve the coverage rate of device
Long-pending, such that it is able to improve the cleaning efficiency of device；
6) during cleaning, utilize protective gas to form a gas blanket above wafer, wafer can be made
With oxygen-barrier, prevent crystal column surface silicon materials oxidized；In dry run, owing to wafer is completely in covering of protective gas
Under lid, when wafer high speed rotating, being dried of whole wafer scope can be better achieved, prevent the generation of washmarking defect, also
Being dried of crystal round fringes can be better achieved.
Accompanying drawing explanation
Fig. 1 is that a kind of combination type multi-frequency ultrasound wave in one embodiment of the invention/mega sonic wave cleans apparatus structure signal
Figure；
Fig. 2 is the structure sectional view of the bottom quartz member in one embodiment of the invention；
Fig. 3 is the perspective view of quartz member bottom Fig. 2；
Fig. 4 is the contour structures schematic diagram of Fig. 1 device；
Fig. 5 is a kind of mated condition schematic diagram of assembly of the invention and spray arm；
Fig. 6 a-Fig. 6 b is two kinds of ultrasound wave in the embodiment of the present invention/megasonic frequency control unit structure principle chart；
Fig. 7 a-Fig. 7 e is that several integrated states of the piezoelectric with different natural frequencies in the embodiment of the present invention show
It is intended to；
Fig. 8 is that the principle of the quartzy microresonator array selective removal portion of ultrasonic sound wave/megasonic energy of the present invention is shown
It is intended to；
Fig. 9 is a kind of combination type multi-frequency ultrasound wave/million sound with gas shield effect in one embodiment of the invention
Ripple cleans the structure sectional view of device；
Figure 10 is the contour structures schematic diagram of Fig. 9；
Figure 11 is a kind of combination type multi-frequency ultrasound wave/million with gas shield effect in another embodiment of the present invention
Sound wave cleans the structure sectional view of device；
Figure 12 is the contour structures schematic diagram of Figure 11；
Figure 13 is the ring-type quartz microresonator guard circle structural representation being provided with perforate in one embodiment of the invention；
Figure 14 is the triangle of regular distribution bar-shaped quartz construction schematic diagram in one embodiment of the invention；
Figure 15 is the rectangle of random distribution bar-shaped quartz construction schematic diagram in one embodiment of the invention；
Figure 16 is the fan-shaped quartz microresonator array schematic diagram in one embodiment of the invention；
Figure 17 is the rectangle quartz microresonator array schematic diagram in one embodiment of the invention.
In figure I. body, 10. quartz microresonator array, 11. quartz microresonator guard circles, 11 '. quartz microresonator
Guard circle perforate, quartz member bottom 12., 13. sealing gaskets, 14. piezoelectrics, 15. upper shells, the 16. fixing spiral shells of spray arm
Keyhole, 17. holddown spring leads, 18. binding posts, 19. holddown springs, 20. coupling layers, 21. sealing rings, 22. lower houses,
23/23-1/23-2. signal source, 24. ultrasound wave/megasonic frequency control unit, 24-1. signalling channel selects derailing switch, 24-
2. converter, 24-3. channel to channel adapter, 25. cooling gas inlets, 26/26 '. cooling gas outlet, 27. spray arms, 28. is solid
Fixed rack, 29. cleaning medicinal liquids, 30. wafers, 30 '. crystal column surface figure structure, 31. gas atmosphere inlets, 32. protective gas go out
Mouthful, 33. upper-lower casing fixing holes, the A. direction of propagation and crystal column surface off plumb ultrasound wave/megasonic energy, the B. direction of propagation
Ultrasound wave/the megasonic energy vertical with crystal column surface.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described in further detail.
It should be noted that in following detailed description of the invention, when describing embodiments of the present invention in detail, in order to clear
Ground represent the structure of the present invention so that explanation, special to the structure in accompanying drawing not according to general scale, and carried out local
Amplify, deform and simplification process, therefore, should avoid being understood in this, as limitation of the invention.
In detailed description of the invention of the invention below, first referring to Fig. 1, Fig. 1 is the one in one embodiment of the invention
Combination type multi-frequency ultrasound wave/mega sonic wave cleans apparatus structure schematic diagram.As it is shown in figure 1, a kind of combination type multifrequency of the present invention
Rate ultrasound wave/mega sonic wave cleans device, above the removable figure wafer being suspended in cleaning equipment, for being placed on rotation
Figure wafer on platform carries out ultrasound wave/mega sonic wave medicinal liquid and cleans.Described device includes body I and ultrasound wave/mega sonic wave frequency
Rate control unit 24.
Body I is hollow structure, and inside is provided with ultrasound wave/mega sonic wave generating mechanism 14,20 and bottom quartz member 12.Institute
Stating ultrasound wave/mega sonic wave generating mechanism and be provided with some piezoelectrics 14, each described piezoelectric has different natural frequencies, and
It is grouped together into an entirety equably；Described piezoelectric 14 connects the signal source 23 that this is external.Described bottom quartz
Parts 12 are provided with the quartzy microresonator array 10 being made up of multiple vertical bar-shaped quartz construction, described quartz microresonator array
The opening that the lower surface of 10 has from described body lower surface stretches out body.
Ultrasound wave/megasonic frequency control unit 24 is connected between signal source 23 and piezoelectric 14, such as, ultrasonic
Ripple/megasonic frequency control unit may be installed external, and one end connecting signal source, the other end connect this internal ultrasound wave/
The piezoelectric of mega sonic wave generating mechanism.The signal of telecommunication of signal source 23 output is by ultrasound wave/megasonic frequency control unit 24
Import the piezoelectric 14 of ultrasound wave/mega sonic wave generating mechanism.Ultrasound wave/megasonic frequency control unit 24 is for controlling shape
Become imports corresponding each piezoelectric 14 at random with each piezoelectric natural frequency signal source one to one output signal of telecommunication.
Refer to Fig. 1.Body specifically can include upper and lower casing 15,22, and be arranged on the ultrasound wave in upper and lower shell body/
Mega sonic wave generating mechanism 14,20 and bottom quartz member 12.Upper and lower casing 14,20 can use removably to be attached, example
Such as by bolt, upper and lower casing is fixedly connected, and forms annular seal space the most therein.Described annular seal space exists
The lower surface of lower house has opening (i.e. the opening of body lower surface).In order to ensure the upper and lower casing sealing property after installing,
Can be equipped with sealing gasket 13 between the joint portion of upper and lower casing.
Refer to Fig. 1.A ultrasound wave/mega sonic wave generating mechanism 14 and 20 it is provided with inside annular seal space.Ultrasound wave/million sound
There is between top and sidepiece and the inwall of annular seal space of ripple generating mechanism gap, thus define a cooling chamber.Ultrasonic
The lower section of ripple/mega sonic wave generating mechanism is provided with a bottom quartz member 12 to fit tightly mode.Bottom quartz member bag
Include and be vertically connected with of setting ring-type quartz microresonator guard circle 11 and a quartzy microresonator array 10.Ring-type quartz
Microresonator guard circle 11 has the groove structure being formed down opening, and quartz microresonator array 10 is arranged on groove structure
In；Bottom the upper end connecting groove of quartz microresonator array 10, lower end is free end；Quartz microresonator array 10 is by multiple
Vertical bar-shaped quartz construction one microresonator array of composition.
Bottom quartz member 12 is by the ring-type quartz top of microresonator guard circle 11 and ultrasound wave/mega sonic wave generation machine
The bottom of structure 14 and 20 is formed and fits tightly connection；Further, bottom quartz member 12 is by ring-type quartz microresonator guard circle
The sidepiece of 11 carries out step installation and coordinates with the annular seal space inwall of lower house 22 part.Similarly, after in order to ensure to install
Sealing property between lower house 22 and bottom quartz member 12, at lower house 22 and ring-type quartz microresonator guard circle 11
Can be equipped with sealing ring 21 between joint portion.
Refer to Fig. 1.The groove lower end of ring-type quartz microresonator guard circle 11 is free end, and it is by lower house 22 lower end
The opening part in face extends downwardly from lower house.The lower surface of described quartz microresonator array 10 is not higher than ring-type quartz microresonator
The lower surface of guard circle groove, the lower surface of the most described quartz microresonator array 10 can be micro-common less than or equal to ring-type quartz
Shake the groove lower surface of chamber guard circle 11.It is illustrated as a kind of quartz microresonator array lower surface less than ring-type quartz microresonator
The situation of guard circle groove lower surface.
Referring to the structure sectional view that Fig. 2 and Fig. 3, Fig. 2 are the bottom quartz members in one embodiment of the invention, Fig. 3 is
The perspective view of quartz member bottom Fig. 2.As shown in Figures 2 and 3, in bottom quartz member 12, its quartz is micro-common
The shake lower surface of each bar-shaped quartz construction of chamber array 10 has identical height, and the most ring-type quartz microresonator is protected
The groove lower surface of guard ring 11.Each bar-shaped quartz construction can form equally distributed quartz microresonator array.
In the installation of bottom quartz member 12, debugging, test process, can be with hand-held ring-type quartz microresonator protection
Circle, it is to avoid the bar-shaped quartz construction that directly contact strength is more weak, causes the damage of bar-shaped quartz construction.Quartz member bottom surface, bottom
On quartzy microresonator array be vertically arranged by with crystal column surface direction, the size of bar-shaped quartz construction can be that diameter is at 0.5-
Between 5mm, length, at more than 2mm, can carry out corresponding configuration according to the difference of ultrasound wave/mega sonic wave operating frequency.Bar-shaped quartz
The quantity of structure and distribution density can also configure with working ability according to actual needs accordingly.
Please continue to refer to Fig. 1.Described ultrasound wave/mega sonic wave generating mechanism can be selected for ultrasound wave/million based on piezoelectric
Sonic generator.In the present embodiment, described ultrasound wave/mega sonic wave generating mechanism can include the piezoelectric being close to connect up and down
14 and coupling layer 20.Coupling layer can use metal to make.The bottom of described coupling layer 20 fits tightly ring-type quartz microresonator
The top of guard circle 11.For ensureing to connect effect and centering, the bottom of described coupling layer 20 is protected with ring-type quartz microresonator
The flute profile connected mode of diagram can be used between the top of guard ring 11.The sidepiece of described coupling layer 20, the sidepiece of piezoelectric 14
And there is between top and the inwall of annular seal space certain gap, it is beneficial to carry out gas cooling.
Between upper shell 15 inner top and piezoelectric 14, it is sequentially arranged with some holddown springs 19 and holddown spring guides
Post 17, under the guide effect of holddown spring lead 17, holddown spring 19 in the vertical direction is in impaction state, and will pressure
Electric material 14, coupling layer 20 are pressed downward against, be allowed to bottom ring-type quartz microresonator guard circle 11 and device lower house 22 it
Between there is no gap, it is simple to effective transmission of ultrasound wave/megasonic energy.
Described upper shell is equipped with piezoelectric binding post 18, for the signal of telecommunication that outside source 23 produces is directed into pressure
Electric material 14, and form loop by connecting coupling layer binding post, to produce ultrasound wave/mega sonic wave oscillation energy.Piezoelectric
The 14 reception signals of telecommunication produce stretching vibration at a high speed later, form ultrasound wave/mega sonic wave vibration, and are conducted downwards by oscillation energy
To coupling layer 20.
Described coupling layer 20 is made for single metal or various metals, its thickness be ultrasound wave produced by piezoelectric/
The integer of mega sonic wave wavelength extraordinarily 1/4 wavelength.Coupling layer 20 can be bonded with piezoelectric 14 by conducting resinl.Piezoelectric and coupling
Close layer surface and can coat corrosion-resistant finishes, prevent cleaning medicinal liquid and coupling layer metal and piezoelectric are produced corrosion.
Can be closed by conducting resinl or low melting point between described coupling layer 20 and ring-type quartz microresonator guard circle 11
Gold or the foil such as the softer gold of hardness or silver connect, to ensure not having therebetween gap.
Refer to the contour structures schematic diagram that Fig. 4, Fig. 4 are Fig. 1 devices and (figure omits ultrasound wave/megasonic frequency control
Unit processed and signal source, lower same).As shown in Figure 4, upper shell 15 is provided with cooling gas inlet 25 and outlet 26, and its connection is by close
Envelope cavity wall and the cooling chamber of ultrasound wave/mega sonic wave generating mechanism outer wall composition.Gas can will be cooled down by cooling gas inlet 25
It is internal empty that body introduces the device being made up of device upper shell 15, device lower house 22, coupling layer 20 and bottom quartz member 12
Chamber, after completing the heat exchange with piezoelectric 14 and coupling layer 20, by cooling, gas outlet 26 discharges, to realize ultrasonic
Piezoelectric and the coupling layer of ripple/mega sonic wave generating mechanism effectively cool down.
Refer to a kind of mated condition schematic diagram that Fig. 5, Fig. 5 are assembly of the invention and spray arm.As it is shown in figure 5, can
The body upper shell 15 of apparatus of the present invention is attached with spray arm 27 by fixed support 28, clear to realize spray arm drive
Cleaning device is made reciprocal circular motion at crystal column surface and is carried out ultrasound wave/mega sonic wave and move cleaning, and realize crystal column surface ultrasound wave/
The uniform fold of megasonic energy.
Referring to Fig. 6 a-Fig. 6 b, Fig. 6 a-Fig. 6 b is that two kinds of ultrasound wave in the embodiment of the present invention/megasonic frequency controls
Unit construction principle figure.As shown in Figure 6 a, ultrasound wave/megasonic frequency control unit is provided with a signalling channel and selects switch
Device 24-1.Meanwhile, use signal source 23-1 of multiple exportable different frequency, each signal source the most corresponding one and signal source
The piezoelectric 14 that the signal frequency that sends is consistent.Connection line between all signal sources and corresponding piezoelectric is the most logical
Crossing a signalling channel selects derailing switch 24-1 to be controlled.The present embodiment uses signal source K1-K3 of three different frequencies
The piezoelectric P1-P3 of the most corresponding three different natural frequencies.Described signalling channel selects the effect of derailing switch to be each
Moment only opens the connection between a road signal source and corresponding piezoelectric, and closes the connection of other passages；Meanwhile, according to spy
Fixed algorithm switches the switch of different signal sources and corresponding piezoelectric interface channel at random, makes ultrasound wave/mega sonic wave occur
The ultrasound wave that mechanism produces/megasonic vibration frequency occurrence dynamics change.
As preferably, signalling channel select interval switching time of derailing switch can be controlled in a few microsecond to hundreds of microsecond it
Between, ensure that ultrasound wave/mega sonic wave that previous signal source produces does not has time enough to complete growing up and broken of bubble with this
Split process.
In above-mentioned solution, have employed multiple piezoelectric with different natural frequencies, respectively from different letters
The signal of telecommunication one_to_one corresponding that number source produces.So can avoid the signal of telecommunication frequency of the operating frequency due to piezoelectric and signal source
Rate is inconsistent and produces energy loss.
Refer to Fig. 6 b, the another kind of ultrasound wave/megasonic frequency control unit structural principle of its display.As shown in Figure 6 b,
Ultrasound wave/megasonic frequency control unit is provided with a converter 24-2 between signal source 23-2 and some piezoelectrics 14
With a channel to channel adapter 24-3.In this solution, use single signal source 23-2 and three there is different intrinsic frequency
The piezoelectric P1-P3 of rate.The signal sent from signal source 23-2 first passes around converter 24-2, and converter can change signal
The frequency of the signal of telecommunication that source sends, exports the signal of telecommunication of several different frequency, and the frequency of these signals of telecommunication is each with device end
The natural frequency one_to_one corresponding of piezoelectric P1-P3.Connect between converter and different piezoelectrics and have channel to channel adapter
24-3, its effect is the frequency of the signal of telecommunication according to front end converter 24-2 output, opens accordingly and has identical natural frequency
Piezoelectric P1 or P2 or the interface channel switch of P3, make ultrasound wave/mega sonic wave that ultrasound wave/mega sonic wave generating mechanism produces
Frequency of vibration occurrence dynamics changes.
As preferably, converter change the period distances of signal frequency can be controlled in a few microsecond to hundreds of microsecond it
Between, ensure that ultrasound wave/mega sonic wave that the signal of telecommunication that previous frequency is formed produces does not has time enough to complete bubble with this
Grow up and rupture process.Similarly, channel to channel adapter is after converter completes a frequency transformation, it is also desirable to switch immediately
To corresponding passage, namely require that converter and channel to channel adapter need to have interval switching time of same number level, ability
It is effectively realized and dynamically changes the purpose cleaning ultrasound wave/megasonic frequency used.
Referring to Fig. 7 a-Fig. 7 e, Fig. 7 a-Fig. 7 e is the piezoelectric with different natural frequencies in the embodiment of the present invention
Several integrated state schematic diagrams.The above-mentioned piezoelectric P1-P3 with different natural frequencies, at actual ultrasound wave/million sound
Ripple cleans in device and combines, and needs to be integrated into the piezoelectric with different natural frequencies one entirety.Tool
The Integration Mode of body can carry out various combination according to the shape of ultrasound wave/mega sonic wave cleaning device.Fig. 7 a-Fig. 7 e shows not
Several concrete compound mode of same piezoelectric P1-P3, is respectively when the rectangle that is shaped as cleaning device body, square
Shape, time circular or fan-shaped, the rectangle that piezoelectric P1-P3 has corresponding to after integrating, square, circular or fan-shaped
Compound mode front sectional elevation.
Apparatus of the present invention are selectively removed portion of ultrasonic sound wave/megasonic energy, and its operation principle can be entered by Fig. 8
One step explanation.As shown in Figure 8, after piezoelectric 14 receives the signal of telecommunication, produce ultrasound wave/mega sonic wave vibrate, ultrasound wave/
Megasonic energy is conducted downwards to bottom quartz member 12 by coupling layer 20, and travel downward extremely quartzy micro-resonance further
On chamber array 10.Ultrasound wave/megasonic energy is when quartz microresonator internal communication, and the direction of propagation is vertical with crystal column surface
Ultrasound wave/megasonic energy B can arrive in the cleaning medicinal liquid layer 29 on wafer 30 surface smoothly, drives and cleans medicinal liquid vibration, real
Now remove the purpose of pollutant.And the direction of propagation can be micro-common at quartz with crystal column surface off plumb ultrasound wave/megasonic energy A
Shaking and refraction and reflection occur on the sidewall in chamber 10, in this process, part energy is consumed to heat energy or other form is released
Put.After the repeatedly refraction on the sidewall at quartz microresonator and reflection, the direction of propagation surpasses with crystal column surface off plumb
Sound wave/megasonic energy A is the most depleted, it is achieved only retain ultrasound wave/mega sonic wave energy that the direction of propagation is vertical with crystal column surface
The purpose of amount B, thus can ensure that the energy of ultrasound wave/mega sonic wave does not results in figure in ultrasound wave/mega sonic wave cleaning process
The damage of crystal column surface figure structure 30 '.
Therefore, the ultrasound wave/megasonic energy transferred out from the piezoelectric of ultrasound wave/mega sonic wave generating mechanism, through stone
After the selective removal of English microresonator, by the lower end of the bar-shaped quartz construction cleaned in medicinal liquid on figure wafer of submerging,
Can vertical conduction to figure crystal column surface, thus under the drive of spray arm, carry out ultrasound wave/mega sonic wave move cleaning.With
Time, described ultrasound wave/megasonic frequency control unit is by using multiple signal sources to replace single signal source, or employing changes
Become the signal frequency that single signal source sends, to form the signal of telecommunication of several different frequency, and the most corresponding one and its frequency
The mode of the piezoelectric that rate is consistent, only makes the piezoelectric of a kind of natural frequency work in each moment, and at each piezoelectricity
Switching at random between material, the ultrasound wave/megasonic frequency making ultrasound wave/mega sonic wave generating mechanism produce dynamically changes, so
It is possible to prevent the generation of stable interference；Further, the frequency of sound wave produced during due to different piezoelectric work changes, its sound
The wavelength of ripple also will change therewith, and the bubble that previous sound wave produces also is not reaching to the limit ruptured during growing up
Time, the frequency of sound wave has switched, and new bubble produces in another position, and original bubble then will not be grown up further and break
Split；In such cyclic process, along with being continually changing of frequency of sound wave, bubble is constantly be generated and disappears, but will not occur
Rupturing, the cavitation effect being possible to prevent bubbles burst to produce causes the damage of crystal column surface fine pattern structure.
The corresponding process of device is cleaned as follows with combinations thereof formula multi-frequency ultrasound wave/mega sonic wave:
First ultrasound wave/mega sonic wave signal generator is connected, power amplifier, the external circuit such as impedance matching box and this is clear
Cleaning device, sets ultrasound wave/mega sonic wave operating frequency and power；Set ultrasound wave/megasonic frequency control unit signalling channel
Select the time interval of derailing switch switching, or the channel to channel adapter of the period distances/correspondence of converter change signal frequency
Switch to interval switching time of respective channel.
Then setting spray arm swinging track, cleaning medicinal liquid flow, temperature, cleaning medicinal liquid conduit positions, scavenging period, cold
But throughput, and the parameter such as the gap of this cleaning device and wafer, it is achieved equal at crystal column surface of ultrasound wave/megasonic energy
Even covering.
Then run and clean menu, after piezoelectric receives the signal of telecommunication, high frequency telescopic shape change occurs, is formed ultrasonic
Ripple/mega sonic wave vibration；This oscillation energy conducts to bottom of device quartz member down through by coupling layer；Ultrasound wave/million sound
After wave energy is propagated via quartz microresonator, only remain ultrasound wave/mega sonic wave that the direction of propagation is vertical with crystal column surface
Energy, and conduction is extremely cleaned in medicinal liquid layer further downward.
Now, in cleaning medicinal liquid, only exist the direction of propagation vertical with crystal column surface, namely with crystal column surface figure longitudinally
The vibrational energy that direction is parallel.This energy drives and cleans liquid vibration, accelerates the pollutant between crystal column surface figure and departs from crystalline substance
Circular surfaces and the process of outwards quality transmission, improve the removal efficiency of crystal column surface pollutant, shorten the cleaning time.With
Time, after the propagation of quartz microresonator array on bottom of device quartz member, the direction of propagation and crystal column surface out of plumb
Ultrasound wave/megasonic energy be removed.Therefore, cleaning in medicinal liquid layer do not exist for crystal column surface figure structure horizontal
Shearing force, also eliminates the stable interference effect of sound wave simultaneously and makes the generation of cavitation erosion conscientiously be controlled, therefore can be effective
Ground protection graphic structure, it is achieved the not damaged of figure wafer cleans.
Current monolithic cleaning equipment is mainly come by jet cleaning liquid on wafer (wafer) surface of high speed rotating
Reach the purpose cleaned.In cleaning process, wafer is clamped by the multiple hold assemblies being arranged on circular card disc main body, folder
Hold parts and hold wafer to carry out high speed rotating.Meanwhile, above wafer, cleaning equipment is additionally provided with spray arm, can pass through
Spray arm is to crystal column surface jet cleaning medium.
In chemical liquid and ultra-pure water cleaning process, crystal column surface material is more susceptible to damage or some chemistry occur
Reaction.Such as, in DHF cleaning, first pass through spray arm and spray DHF to crystal column surface, by the autoxidation of crystal column surface
Layer erodes completely；Then crystal column surface is rinsed, by residual liquor and the product of crystal column surface by injection ultra-pure water
Wash out；Finally, then by injection N2Crystal column surface has been dried whole technical process.In this process, wafer table
The naked silicon materials in face are very easy to react with the oxygen in processing chamber, generate silicon dioxide, cause crystal column surface material
Change, follow-up technique is impacted.Accordingly, it would be desirable in technical process, the oxygen content in whole chamber is entered
Row controls.
On the other hand, at wafer N2In dry run, if technology controlling and process obtains bad, can occur at crystal column surface
Watermark (washmarking) defect.The dominant mechanism that Watermark is formed is at N2In dry run, incomplete and residual because being dried
Remaining in the water of crystal column surface, incorporate the SiO reacted and generate with oxygen2, and form H further2SiO3Or HSiO3-precipitation.
After the water of crystal column surface volatilizees, these precipitations i.e. form the washmarking of flat condition.Additionally, in above-mentioned cleaning process, the most often
Occurring there is the unseasoned phenomenon thoroughly of drop on crystal round fringes rib, this also result in certain impact for wafer cleaning quality.
Accordingly, it would be desirable to drying process is optimized, it is achieved being completely dried of whole wafer scope.
Further improvement of the present invention point is the function realizing gas shield on the basis of figure wafer not damaged cleans.
In technical process, utilize protective gas to form a gas blanket above wafer, protective gas can be nitrogen or
The noble gases such as argon.Such advantage is: (1), in technical process, makes wafer and oxygen-barrier, prevents crystal column surface silicon material
Expect oxidized；(2) in dry run, owing to wafer is completely under the covering of protective gas, when wafer high speed rotating, can
Preferably to realize being dried of whole wafer scope, prevent the generation of washmarking defect, it is also possible to preferably realize crystal round fringes
It is dried.
The realization of gas protecting function can be in the way of taking following two different.
Referring to Fig. 9 and Figure 10, Fig. 9, to be that a kind of in one embodiment of the invention has the combination type of gas shield effect many
Frequency ultrasonic wave/mega sonic wave cleans the structure sectional view of device；Figure 10 is the contour structures schematic diagram of Fig. 9.Such as Fig. 9 and Figure 10 institute
Show, combination type multi-frequency ultrasound wave/mega sonic wave can be used to clean the cooling gas of device itself as protective gas.On device
Housing 15 is provided with cooling gas inlet 25, as cooling gas and the co-portal of protective gas；Sidewall at lower house 22 leans on
At nearly bottom surface, process the slit that a ring shape has a down dip, or can also be a circle pore, as cooling gas and protective gas
Conjoint outlet 26 '.Cooling gas from gas entrance 25 enters and cleans inside device, i.e. by annular seal space inwall and ultrasound wave/million sound
The cooling chamber of ripple generating mechanism outer wall composition, after completing the cooling to piezoelectric and coupling layer, from a circle gas outlet 26 ' spray
Going out, form a gas blanket at crystal column surface simultaneously, during control cleaning, the oxygen content in chamber, prevents crystalline substance
Circle reacts with the oxygen in air.When drying process, cooling gas stays open, and plays injecting protective gas and realizes crystalline substance
The purpose that circular surfaces is dried, can replace the spray arm of tradition individually jet drying gas, make cleaning equipment chamber structure simple
Change.When being dried, the cleaning device with gas shield can be fixed on crystal circle center's injection, it is also possible under the drive of spray arm
Spray along arc swing at crystal column surface.
Referring to Figure 11 and Figure 12, Figure 11 is a kind of combination with gas shield effect in another embodiment of the present invention
Formula multi-frequency ultrasound wave/mega sonic wave cleans the structure sectional view of device；Figure 12 is the contour structures schematic diagram of Figure 11.Such as Figure 11 and
Shown in Figure 12, the another kind of implementation of gas protecting function, is to use a single gas atmosphere inlet 31 to be passed through protection
Gas.Equally, process, at the sidewall of device lower house, slit or the circle gas that annular has a down dip near the position of bottom surface
Hole, as the outlet 32 of protective gas.It is passed through protective gas by gas atmosphere inlet 31, and by protective gas outlet 32 spray
Go out, a gas blanket can be formed at crystal column surface, thus control the oxygen content in chamber, and when drying process,
The volume drying of crystal column surface is better achieved.
Effect around the annular quartz microresonator guard circle of quartz microresonator array setting is in quartz portion, bottom
In the installation of part, debugging, test process, can be with hand-held ring-type quartz microresonator guard circle, it is to avoid directly contact strength is more weak
Bar-shaped quartz construction, cause the damage of bar-shaped quartz construction.Meanwhile, quartz microresonator guard circle also needs to ensure to clean medicinal liquid
Can free in and out, and be full of the space between quartz microresonator array and crystal column surface, make ultrasound wave/megasonic energy energy
Enough it is effectively transmitted in the cleaning medicinal liquid thin layer of crystal column surface.
When quartz microresonator guard circle height with quartz microresonator array highly consistent time, figure wafer without
When device work is cleaned in damage, device distance crystal column surface has a certain distance, cleans medicinal liquid and can enter into quartzy micro-resonance
In the gap of chamber and crystal column surface.But due to the effect of surface tension of liquid, the replacement result cleaning medicinal liquid can be poor, shadow
Ring the exchange process of medicinal liquid new, old, cause cleaning performance poor.
Can have multiple as the scheme optimized further, such as, as shown in Fig. 2-Fig. 3, quartz microresonator can be made
The lower surface height of guard circle 11 is slightly less than the lower surface height of quartz microresonator array 10, in order to clean medicinal liquid turnover stone
Gap between English microresonator array and crystal column surface.But in this prioritization scheme, the bottom surface of quartz microresonator array is low
In the bottom surface of quartz microresonator guard circle, the protected effect for quartz microresonator is poor.
Therefore, it can be optimized further, such as, make height and the quartz microresonator of quartz microresonator guard circle
Array highly consistent, but in the recess sidewall of guard circle, have the perforate of given shape, make the cleaning medicinal liquid can be free
Gap between turnover quartz microresonator array and crystal column surface.Some embodiments include: as shown in figure 13, micro-common at quartz
Rectangular perforate 11 ' is had in the recess sidewall of chamber guard circle 11 of shaking；Or rectangle perforate can be used arch perforate
And the gate-shaped of other forms or window-like perforate substitute.
As other improvement, in quartz microresonator array the shape of bar-shaped quartz construction can include circle and its
Its some shapes, such as triangle, pentagon, the solid bar structure such as rectangle.Meanwhile, the arrangement of each bar-shaped quartz construction can
With according to certain regular distribution, it is also possible to completely random is distributed, in case in specific region shape when locking apparatus swings with spray arm
Becoming the region that energy is higher, the Energy distribution making ultrasound wave/mega sonic wave is the most uniform.Such as, as shown in figure 14, it is this
In a bright embodiment, quartz microresonator array 10 has the bottom quartz member of the bar-shaped quartz construction of triangle of regular distribution
Schematic diagram.The most as shown in figure 15, it has random distribution arrangement for quartz microresonator array 10 in one embodiment of the invention
The bottom quartz member schematic diagram of the bar-shaped quartz construction of rectangle.
As alternatively improved point, for improving the cleaning efficiency cleaning device, can be optimized, i.e. cleaning device shape
Body monnolithic case including ultrasound wave/mega sonic wave generating mechanism, bottom quartz member is optimized, to improve cleaning
The area coverage of device.Such as, the horizontal profile of body may be designed so that sector, triangle, pentagon or strip
(just) shape, i.e. make ultrasound wave/mega sonic wave generating mechanism, the lower surface profile of bottom quartz member forms sector, triangle, five
Limit shape or strip (just) shape；Further such that piezoelectric and coupling layer, ring-type quartz microresonator guard circle and quartz
The lower surface profile of microresonator array forms sector, triangle, pentagon or strip (just) shape.Such as, such as Figure 16 institute
Showing, it is the cleaning device schematic diagram in one embodiment of the invention with fan-shaped profile quartz microresonator array 10, this device
In can have piezoelectric and coupling layer, fan-shaped ring-type quartz microresonator guard circle and the quartz microresonator battle array of sector
Row, upper-lower casing can be assembled by upper-lower casing fixing hole 33.This apparatus structure can cover from wafer center of circle the to wafer
One sector region at edge, it is ensured that the crystal column surface in this region can be cleaned simultaneously, improves cleaning efficiency with this,
Improve and clean uniformity.The most as shown in figure 17, it is for having the micro-resonance of quartz of strip (just) shape profile in one embodiment of the invention
The cleaning device schematic diagram of chamber array 10, this device can have the piezoelectric of strip and coupling layer, strip ring-type
Quartz microresonator guard circle and quartz microresonator array, such that it is able to it is long to cover from wafer center of circle the to crystal round fringes
Bar-shaped zone.
In sum, the present invention by cleaning the hollow housing of device body at combination type multi-frequency ultrasound wave/mega sonic wave
Interior setting ultrasound wave based on piezoelectric/mega sonic wave generating mechanism produces sonic oscillation, and is occurred by ultrasound wave/mega sonic wave
The quartzy microresonator array submerged in wafer supernatant wash liquid connected below mechanism, does not hangs down the direction of propagation with crystal column surface
Straight ultrasound wave/megasonic energy carries out selective removal, makes ultrasound wave/megasonic energy vertical conduction to wafer, it is ensured that
In ultrasound wave/mega sonic wave cleaning process, the energy of ultrasound wave/mega sonic wave does not results in the damage of figure crystal column surface figure,
Thus realize the not damaged ultrasound wave/mega sonic wave of figure wafer is moved cleaning.Meanwhile, by ultrasound wave/megasonic frequency control
Unit processed constantly changes the frequency of the signal source output signal of telecommunication passed through near the natural frequency of piezoelectric, makes piezoelectric
The ultrasound wave produced/megasonic vibration frequency dynamic change, is possible to prevent to produce stable interference effect in cleaning medicinal liquid, and
The cavitation effect being possible to prevent bubbles burst to produce causes the damage of crystal column surface fine pattern structure.
The combinations thereof formula multi-frequency ultrasound wave of the present invention/mega sonic wave cleans device and has the advantage that
1) by the quartzy microresonator array structure of quartz member bottom appropriate design, it is achieved remove on other direction
Ultrasound wave/megasonic energy, only retains the mesh of the direction of propagation ultrasound wave/megasonic energy vertical with crystal column surface to be cleaned
, it is ensured that in ultrasound wave/mega sonic wave cleaning process, the energy of ultrasound wave/mega sonic wave does not results in figure crystal column surface figure
Damage；
2) in ultrasound wave/mega sonic wave cleaning process, by using multiple signal sources to replace single signal source, or adopt
With changing the signal frequency that sends of single signal source, to form the signal of telecommunication of several different frequency, and the most corresponding one with
The piezoelectric that its frequency is consistent, only makes the piezoelectric of a kind of natural frequency work in each moment, and in each piezoresistive material
Switching at random between material, the ultrasound wave/megasonic frequency making ultrasound wave/mega sonic wave generating mechanism produce dynamically changes, and so may be used
To prevent the generation of stable interference；Simultaneously as the frequency of sound wave produced during different piezoelectric work changes, its sound wave
Wavelength also will change therewith, the bubble that previous sound wave produces is when being also not reaching to the limit ruptured during growing up,
The frequency of sound wave has switched, and new bubble produces in another position, and original bubble then will not be grown up further and rupture；
In such cyclic process, along with being continually changing of frequency of sound wave, bubble is constantly be generated and disappears, but will not break
Splitting, the cavitation effect being possible to prevent bubbles burst to produce causes the damage of crystal column surface fine pattern structure；
3) shape of the quartz bar-shaped quartz construction of microresonator array can include circular and some other shape, such as
Triangle, pentagon, rectangle etc.；Meanwhile, the arrangement of each bar-shaped quartz construction can be according to certain regular distribution, it is also possible to
Completely random is distributed, in case form the region that energy is higher with spray arm when locking apparatus swings in specific region, makes ultrasound wave/million
The Energy distribution of sound wave is the most uniform；
4) on ring-type quartz microresonator guard circle, have perforate, cleaning medicinal liquid can be made to free in and out quartz microresonator
Gap between array and figure crystal column surface, to eliminate the surface tension effects of crystal column surface cleaning medicinal liquid, improves and cleans medicine
The replacement result of liquid, accelerates the exchange process of medicinal liquid new, old, improves the effect cleaned；
5) device may be designed so that sector, triangle, pentagon or strip, can improve the coverage rate of device
Long-pending, such that it is able to improve the cleaning efficiency of device；
6) during cleaning, utilize protective gas to form a gas blanket above wafer, wafer can be made
With oxygen-barrier, prevent crystal column surface silicon materials oxidized；In dry run, owing to wafer is completely in covering of protective gas
Under lid, when wafer high speed rotating, being dried of whole wafer scope can be better achieved, prevent the generation of washmarking defect, also
Being dried of crystal round fringes can be better achieved.
The above-described the preferred embodiments of the present invention that are only, described embodiment is also not used to limit the patent guarantor of the present invention
Protect scope, the equivalent structure change that the description of the most every utilization present invention and accompanying drawing content are made, in like manner should be included in
In protection scope of the present invention.
Claims (10)
1. combination type multi-frequency ultrasound wave/mega sonic wave cleans device, it is characterised in that including:
Body, the inside of its hollow is provided with ultrasound wave/mega sonic wave generating mechanism and bottom quartz member, described ultrasound wave/million sound
Ripple generating mechanism is provided with some piezoelectrics, and each described piezoelectric has different natural frequencies, and uniform combination is together
Forming entirety, described piezoelectric connects the signal source that this is external, and described bottom quartz member is provided with by multiple vertical bar-shaped stones
The quartzy microresonator array of English structure composition, the described quartz microresonator array opening from described body lower surface stretches out；
Ultrasound wave/megasonic frequency control unit, is connected between signal source and piezoelectric, for control by formed with
Each piezoelectric natural frequency signal source one to one output signal of telecommunication imports each piezoelectric of correspondence at random；
Wherein, described piezoelectric receives the signal of telecommunication and produces ultrasonic energy, and through bottom, quartz member conducts downwards, and through quartz
After the selective removal of microresonator array, by the described quartz microresonator array in figure wafer supernatant wash liquid that submerges
Lower surface vertical conduction to figure crystal column surface, drive and clean medicinal liquid vibration, move cleaning carrying out ultrasound wave/mega sonic wave,
Meanwhile, by described ultrasound wave/megasonic frequency control unit, the signal of telecommunication of different frequency is imported at random the piezoresistive material of correspondence
Material, makes ultrasound wave/megasonic vibration frequency dynamic change that ultrasound wave/mega sonic wave generating mechanism produces, to prevent from cleaning medicine
Liquid produces stable interference effect and bubbles burst phenomenon.
Combination type multi-frequency ultrasound wave the most according to claim 1/mega sonic wave cleans device, it is characterised in that described super
Sound wave/megasonic frequency control unit includes that a signalling channel selects derailing switch, and described signalling channel selects derailing switch to be located at
Between some signal sources and piezoelectric that quantity is equal, each signal source correspondence one respectively exports signal frequency one with it
Cause piezoelectric, described signalling channel select derailing switch each moment only open a road signal source and corresponding piezoelectric it
Between connection, and switch the switch of different signal sources and corresponding piezoelectric interface channel at random, make ultrasound wave/mega sonic wave send out
The ultrasound wave that life structure produces/megasonic vibration frequency dynamic change.
Combination type multi-frequency ultrasound wave the most according to claim 1/mega sonic wave cleans device, it is characterised in that described super
Sound wave/megasonic frequency control unit includes a converter being sequentially arranged between signal source and some piezoelectrics and one
Channel to channel adapter, changes the signal frequency of signal source output, to export the telecommunications of some different frequencies by described converter
Number, and with the natural frequency one_to_one corresponding of each piezoelectric, the signal of telecommunication that described channel to channel adapter exports at random according to converter
Frequency, opens the interface channel switch of respective frequencies piezoelectric, make ultrasound wave that ultrasound wave/mega sonic wave generating mechanism produces/
Megasonic vibration frequency dynamic changes.
Combination type multi-frequency ultrasound wave the most according to claim 1/mega sonic wave cleans device, it is characterised in that described
Body specifically includes:
Upper and lower casing, its connection forms the hollow sealing chamber of body, and described annular seal space forms opening in the lower surface of lower house；
Ultrasound wave/mega sonic wave generating mechanism, is located in annular seal space, including piezoelectric and coupling layer, the institute of being close to setting up and down
Stating coupling layer bottom and be close to quartz member top, bottom, described piezoelectric, coupling layer and bottom quartz member are by upper casing
Holddown spring set successively between body top and piezoelectric and holddown spring lead compress, described coupling layer side
Having gap between portion, piezoelectric sidepiece and top and annular seal space inwall, described upper shell, equipped with piezoelectric binding post, is used
In external electric signal being directed into piezoelectric, and form loop by connecting coupling layer binding post, to produce ultrasound wave/million sound
Ripple oscillation energy；
Bottom quartz member, is located in annular seal space, including the ring-type quartz microresonator guard circle of a downwardly open groove of formation,
And the quartzy microresonator array that upper end is connected at bottom portion of groove, lower end is free end, described ring-type quartz is micro-common
Coupling layer bottom is close on the guard circle top, chamber that shakes, and its sidepiece and annular seal space are tightly connected between the inwall of lower housing section,
Its groove lower end is stretched out by the opening of lower house lower surface, and the lower surface of described quartz microresonator array is not higher than under groove
End face.
Combination type multi-frequency ultrasound wave the most according to claim 4/mega sonic wave cleans device, it is characterised in that on described
Housing is provided with gas access and outlet, its connection by annular seal space inwall and ultrasound wave/mega sonic wave generating mechanism outer wall form cold
But chamber, for being passed through cooling gas by gas access, cools down ultrasound wave/mega sonic wave generating mechanism, and is gone out by gas
Mouth is discharged.
Combination type multi-frequency ultrasound wave the most according to claim 4/mega sonic wave cleans device, it is characterised in that under described
The connection of housing sidepiece is provided with gas atmosphere inlet and outlet, and the outlet of described protective gas is the pore that has a down dip of a circle or slit, uses
Make to be passed through protective gas by gas atmosphere inlet, and by protective gas outlet ejection, to form one at figure crystal column surface
Gas blanket.
Combination type multi-frequency ultrasound wave the most according to claim 4/mega sonic wave cleans device, it is characterised in that on described
Housing is provided with gas access, and described lower house sidepiece is provided with gas outlet, and described gas outlet is the pore or narrow that a circle has a down dip
Seam, the cooling chamber that described gas access and outlet are made up of annular seal space inwall and ultrasound wave/mega sonic wave generating mechanism outer wall,
For being passed through cooling gas by gas access, ultrasound wave/mega sonic wave generating mechanism is cooled down, and is passing through gas outlet
While discharging diagonally downward, form a gas blanket at figure crystal column surface.
Combination type multi-frequency ultrasound wave the most according to claim 4/mega sonic wave cleans device, it is characterised in that described ring
The recess sidewall of shape quartz microresonator guard circle is provided with one to some perforates, is used for making cleaning medicinal liquid free in and out quartz micro-common
Shake the gap between chamber array and figure crystal column surface.
Combination type multi-frequency ultrasound wave the most according to claim 4/mega sonic wave cleans device, it is characterised in that described stone
The shape of the bar-shaped quartz construction of English microresonator array includes circle, triangle, pentagon or rectangle, each bar-shaped quartz construction
According to certain regular distribution, or it is distributed according to random fashion.
Combination type multi-frequency ultrasound wave the most according to claim 4/mega sonic wave cleans device, it is characterised in that described
The profile of body and ultrasound wave/mega sonic wave generating mechanism, bottom quartz member is sector, triangle, pentagon or strip
Shape.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610739227.7A CN106269452B (en) | 2016-08-26 | 2016-08-26 | A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device |
| TW106100825A TWI600479B (en) | 2016-08-26 | 2017-01-11 | Ultrasonic and megasonic cleaning device |
| US15/663,667 US20180056340A1 (en) | 2016-08-26 | 2017-07-28 | Ultrasonic/megasonic cleaning device |
| SG10201706436XA SG10201706436XA (en) | 2016-08-26 | 2017-08-07 | Ultrasonic/megasonic cleaning device |
| KR1020170107473A KR101940288B1 (en) | 2016-08-26 | 2017-08-24 | Ultrasonic/mega sonic cleaning device |
| US17/020,217 US11554390B2 (en) | 2016-08-26 | 2020-09-14 | Ultrasonic/megasonic cleaning device |
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| CN201610739227.7A CN106269452B (en) | 2016-08-26 | 2016-08-26 | A kind of combined type multi-frequency ultrasonic wave/mega sonic wave cleaning device |
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| CN106269452B CN106269452B (en) | 2018-12-18 |
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| CN112371645A (en) * | 2020-10-26 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Acoustic wave cleaning device and wafer cleaning equipment |
| CN117019761A (en) * | 2023-10-10 | 2023-11-10 | 常州捷佳创精密机械有限公司 | Ultrasonic/megasonic cleaning tank |
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| CN110000075A (en) * | 2019-04-02 | 2019-07-12 | 苏州诺莱声科技有限公司 | A kind of ultrasonic transducer can reduce oscillation crosswise |
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Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: No.1 Jiuxianqiao East Road, Chaoyang District, Beijing 100016 Patentee before: BEIJING SEVENSTAR ELECTRONICS Co.,Ltd. |