JP2006302974A - Apparatus for cleaning semiconductor wafer sheet - Google Patents

Apparatus for cleaning semiconductor wafer sheet Download PDF

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JP2006302974A
JP2006302974A JP2005118987A JP2005118987A JP2006302974A JP 2006302974 A JP2006302974 A JP 2006302974A JP 2005118987 A JP2005118987 A JP 2005118987A JP 2005118987 A JP2005118987 A JP 2005118987A JP 2006302974 A JP2006302974 A JP 2006302974A
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wafer
cleaning
semiconductor wafer
liquid
drying
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Takumi Araki
巧 荒木
Takashi Hamuro
孝 羽室
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Sansha Electric Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer cleaning apparatus which has high cleaning effect, can save an operational cost and has a function of preventing bending of a wafer corresponding to a wafer size. <P>SOLUTION: A movable cap provided with a jetting nozzle moves down, covers a wafer to jet a liquid and clean the wafer, then, the moving cap moves above the wafer, and the wafer is transferred to a next station. A plurality of wafer supporting pillars provided in the individual station support the bottom of the wafer to prevent the bending of the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、水平位置のウエハ表面を1枚ずつ液噴射で洗浄する装置に関する。 The present invention relates to an apparatus for cleaning a wafer surface in a horizontal position one by one by liquid ejection.

従来のこの種の技術としては特許文献1にウエハの割れ防止に効果のある洗浄装置が開示されている。段落番号[0048]には,「洗浄液をウエハの上部から噴射できるため,図10(本明細書の図9)に示すようにハンダバンプ電極周辺のフラックスの他,微少なハンダ屑を除去する」と記載されている。   As a conventional technique of this type, Patent Document 1 discloses a cleaning apparatus effective for preventing cracking of a wafer. In paragraph [0048], “Since the cleaning liquid can be sprayed from the top of the wafer, as shown in FIG. 10 (FIG. 9 of the present specification), in addition to the flux around the solder bump electrodes, fine solder debris is removed.” Are listed.

図10(本明細書の図9)に示されている洗浄ノズルの位置は,半導体ウエハ表面の,球体のハンダバンプの真上にあり,この球体の根元にあるフラックスが除去され難い,ウエハ平面に対して直角に近い洗浄水の噴射を受けるので洗浄面積が狭くノズルを万遍無く走査させウエハ全面に洗浄液を噴射させることになり洗浄時間が掛かる。以上の開示技術は、搬入口から入れられたウエハは矢印の方向に移動し,洗浄が終ったウエハは搬出口から取出されて次工程に移される。洗浄に時間が掛かるこの様な装置の場合,洗浄のウエハコンベアが長くなってスペースが大きく必要で,設置面積が広く必要になる、大きい装置となってしまう欠点があった。   The position of the cleaning nozzle shown in FIG. 10 (FIG. 9 in the present specification) is on the surface of the semiconductor wafer, directly above the solder bump of the sphere, and it is difficult to remove the flux at the base of the sphere. On the other hand, since the cleaning water is sprayed at a right angle, the cleaning area is narrow and the nozzles are scanned evenly to spray the cleaning liquid over the entire surface of the wafer. In the above disclosed technique, the wafer put in from the carry-in port moves in the direction of the arrow, and the cleaned wafer is taken out from the carry-out port and transferred to the next process. In the case of such an apparatus that takes time for cleaning, there is a disadvantage that the cleaning wafer conveyor becomes long and requires a large space and requires a large installation area, resulting in a large apparatus.

さらに欠点として洗浄ミストが多く発生して搬入口や搬出口からミストが漂い出るので排気ダクトで空気と共に排気する。このため洗浄液の損失がこの装置の稼動コストの高く掛かる要因になっていた。   As a further disadvantage, a lot of cleaning mist is generated and mist drifts out from the carry-in entrance and the carry-out exit, and is exhausted together with air through the exhaust duct. For this reason, the loss of the cleaning liquid has become a factor that increases the operating cost of this apparatus.

「特開2003−7665号」公報、名称「半導体装置の製造方法」Japanese Patent Laid-Open No. 2003-7665, Name “Method of Manufacturing Semiconductor Device”

半導体ウエハのハンダ屑やフラックスに対して洗浄効果が高く,設置スペースが節約できて,稼動コストが節約できる洗浄装置を提供する、ウエハサイズの大型化への時流に対応し、また300μから100μへの厚さの多様化傾向に対処して、ウエハの撓み防止に関する改良、ウエハのダメージを配慮した移送手段に関する改良、洗浄及び乾燥ブース内のクリーン度向上が本発明の目的である。   Offers a cleaning device that has a high cleaning effect on solder waste and flux of semiconductor wafers, saves installation space, and saves operating costs. Corresponds to the trend toward larger wafer sizes and from 300μ to 100μ. It is an object of the present invention to cope with the diversification tendency of the thickness of the wafer, to improve the wafer deflection prevention, to improve the transfer means considering the damage of the wafer, and to improve the cleanliness in the cleaning and drying booth.

半導体ウエハに覆い被さる可動キャップと洗浄液ノズルを有し,半導体ウエハをチャックで固定載置する回転台とで形成される個別ステーションと, 一個又複数個の個別ステーションが収容された洗浄・リンス工程ユニット及び、ドライエア供給パイプ付き可動キャップとウエハ保持回転台からなる乾燥工程ユニットと,前記可動キャップの上下動作に連動して決められたタクトタイムで一斉に半導体ウエハを移送させる移送制御手段と移送機構とを具備し,洗浄液タンク,リンス液タンク,洗浄液及びリンス液の噴射圧力と噴射液量の調整が出来る液ポンプ吐出調整手段を具備する液ポンプと,個別ステーション毎に液の噴射圧力と噴射液量とを所定の値に設定され回転台の回転速度を所定の設定値に設定される洗浄装置とした。ノズルと回転台との相対速度を変化させ、最適速度を見つけだして設定するとき洗浄力が向上し洗浄速度が向上し、洗浄からリンス迄を同一のブースで実行可能とし、乾燥工程ユニットとタクトタイムを同期化した。   A cleaning / rinsing process unit that has a movable cap that covers the semiconductor wafer, a cleaning liquid nozzle, and a rotating station on which the semiconductor wafer is fixedly mounted by a chuck, and one or more individual stations. And a drying process unit comprising a movable cap with a dry air supply pipe and a wafer holding turntable, a transfer control means and a transfer mechanism for simultaneously transferring semiconductor wafers with a tact time determined in conjunction with the vertical movement of the movable cap. A liquid pump including a cleaning liquid tank, a rinsing liquid tank, a liquid pump discharge adjusting means capable of adjusting a cleaning liquid and a rinsing liquid injection pressure and an injection liquid amount, and a liquid injection pressure and an injection liquid amount for each individual station. Are set to a predetermined value, and the rotation speed of the turntable is set to a predetermined setting value. When the relative speed between the nozzle and the turntable is changed and the optimum speed is found and set, the cleaning power is improved, the cleaning speed is improved, and from washing to rinsing can be performed in the same booth, and the drying process unit and tact time Was synchronized.

洗浄ノズルとドライエア供給パイプ付きの可動キャップと、送気管付きウエハ保持台からなる一個のステーションが収容され洗浄から乾燥までの全工程が実行される洗浄・乾燥ユニット,並びに、可動キャップ開閉動作に連動し半導体ウエハを後工程へ移送させる駆動手段、移送制御手段、洗浄液タンク,リンス液タンクを有する洗浄装置において,洗浄液及びリンス液噴射圧力、と各噴射量の調整が出来る液ポンプ吐出調整手段と液ポンプ,噴射ノズル(及び/又は)ウエハ保持台の回転速度の設定手段、噴射角度の設定手段、各液の噴射圧力設定手段と噴射液量設定手段とを具備し、洗浄から乾燥までの工程が一つのブースで実行されることを特徴とした半導体ウエハ枚葉洗浄装置とした。ノズルと回転台との相対速度を変化させ、洗浄速度が向上したので実現した。   A cleaning / drying unit that houses a single station consisting of a cleaning cap, a movable cap with a dry air supply pipe, and a wafer holder with an air supply tube, and performs all processes from cleaning to drying, and interlocks with the opening and closing operation of the movable cap In a cleaning apparatus having a driving means for transferring a semiconductor wafer to a subsequent process, a transfer control means, a cleaning liquid tank, and a rinsing liquid tank, a liquid pump discharge adjusting means and a liquid capable of adjusting the cleaning liquid and the rinsing liquid injection pressure, and each injection amount The apparatus includes a pump, an injection nozzle (and / or) wafer holding table rotational speed setting means, an injection angle setting means, an injection pressure setting means for each liquid, and an injection liquid amount setting means, and includes steps from cleaning to drying. The semiconductor wafer single wafer cleaning apparatus is characterized by being executed in one booth. This was realized by changing the relative speed between the nozzle and the turntable and improving the cleaning speed.

噴射ノズルを設けた可動キャップがウエハに覆う様に各ステーションに設けられ、噴射
ノズルの噴射方向が、ウエハ表面となす角度が10乃至25度の範囲で調整ができる首振り自在または,角度を決めて固定されていて,各タンクの液が液ポンプを介して導液管でノズルに導かれる半導体ウエハ枚葉洗浄装置とした。
A movable cap provided with an injection nozzle is provided at each station so as to cover the wafer, and the injection direction of the injection nozzle can be adjusted within a range of 10 to 25 degrees with respect to the wafer surface. A semiconductor wafer single wafer cleaning device in which the liquid in each tank is guided to a nozzle by a liquid conduit through a liquid pump.

乾燥工程ユニットへ決められたタクトタイムで移送されて来たウエハの固定は、ウエハの側面で前後からのチャック掴みの固定機構(及び/又は)、ウエハの下面での真空吸着手段を具備した半導体ウエハ枚葉洗浄装置とした。
洗浄・リンス工程ユニット、乾燥工程ユニットへと一斉にウエハを決められたタクトタイムで移送されて来たウエハの固定は、ウエハの側面で前後からのチャック掴みの固定機構(又は/及び)ウエハを下面で支える複数のピラーを具備しウエハ撓みを防いで保持する半導体ウエハ枚葉洗浄装置とした。
The wafer that has been transferred to the drying process unit at a predetermined tact time is fixed by a semiconductor that has a chuck holding mechanism (and / or) for chucking from the front and back on the side of the wafer and a vacuum suction means on the lower surface of the wafer. A wafer single wafer cleaning apparatus was obtained.
The wafers that have been transferred to the cleaning / rinsing process unit and the drying process unit all at the same tact time are fixed to the chuck holding mechanism (or / and) on the side of the wafer from the front and back. The semiconductor wafer single wafer cleaning apparatus is provided with a plurality of pillars supported by the lower surface to hold and prevent the wafer from bending.

前記ウエハを下面で支える複数の前記ピラーは、ウエハ平面を載置する水平面の頂上部を有するピラーである事を特徴とする半導体ウエハ枚葉洗浄装置とした。   The semiconductor wafer single wafer cleaning apparatus is characterized in that the plurality of pillars supporting the wafer on the lower surface are pillars having top portions of horizontal surfaces on which the wafer plane is placed.

前記ウエハを下面で支える複数の前記ピラーの頂上部は、ウエハ周辺の平面を載置する水平面の外周部近傍に、垂直部または、包絡面が上に開く円錐の一部分である傾斜面頂上部を有するピラー群でウエハ周辺の外周部側面に接しウエハをセンターリングするウエハセンタリング手段を具備した半導体ウエハ枚葉洗浄装置とした。   The tops of the plurality of pillars that support the wafer on the lower surface have a vertical part or a top part of an inclined surface that is a part of a cone whose envelope surface opens upward, in the vicinity of the outer peripheral part of the horizontal surface on which the plane around the wafer is placed. A semiconductor wafer single wafer cleaning apparatus provided with wafer centering means for centering the wafer in contact with the outer peripheral side surface of the periphery of the wafer by the pillar group having the wafer.

スピンテーブルに真空吸着(及び/又は)機械的チャックされたウエハ裏面に対して開口するドライエア送気管が設けられ、ドライエア送気管を設けた可動キャップが覆い被せられるように個別ステーションに設けられ,該ドライエア送気管の開口部から半導体ウエハの裏面および表面に常温のドライエアを噴出させ,洗浄装置の据付面積を抑えるために温風乾燥の代わりにドライエア乾燥を行うことを特徴とした半導体ウエハ枚葉洗浄装置とした。   A dry air air supply tube that opens to the back surface of the wafer vacuum chucked (and / or) mechanically chucked on the spin table is provided, and is provided at an individual station so that a movable cap provided with the dry air air supply tube is covered. Single wafer cleaning of semiconductor wafers, characterized by blowing dry air at room temperature from the opening of the dry air supply pipe to the back and front surfaces of the semiconductor wafer and performing dry air drying instead of hot air drying to reduce the installation area of the cleaning device The device.

スピンテーブルに固定された半導体ウエハの表面(又は/及び)裏面にドライエアを噴出させ,同時にスピンテーブルを高速回転させて遠心乾燥を併用して、急速乾燥させることを特徴とする半導体ウエハ枚葉洗浄装置とした。   Semiconductor wafer single wafer cleaning, characterized in that dry air is jetted onto the front surface (or / and back surface) of a semiconductor wafer fixed to a spin table, and at the same time, the spin table is rotated at a high speed to perform rapid drying together with centrifugal drying. The device.

シリコンウエハを洗浄ステージへ載置する手段であるローダユニットが、洗浄機能を有するユニットに連結され,且つ乾燥機能を有するユニットに,アンローダユニットの側面位置が連結された半導体ウエハ枚葉洗浄装置とした。
半導体ウエハを移送させる駆動機構のうち、潤滑油などで汚損される危惧のある部材を、洗浄・リンス機能を有するユニットのブース内から隔離した構成とし、ブース内のクリーン度を保ち、ウエハ仕上がり清浄度を高めることを特徴とした半導体ウエハ枚葉洗浄装置の構成とした。
A semiconductor wafer single wafer cleaning apparatus in which a loader unit as a means for placing a silicon wafer on a cleaning stage is connected to a unit having a cleaning function, and a side surface position of the unloader unit is connected to a unit having a drying function. .
Of the drive mechanism that transports semiconductor wafers, the components that are likely to be contaminated by lubricating oil are separated from the booth of the unit that has a cleaning and rinsing function. The configuration of the semiconductor wafer single wafer cleaning apparatus is characterized by increasing the degree.

本発明によればノズルと回転台との相対速度を変化させ、洗浄速度が向上した為,従来に於ける洗浄ステーション2個を1個でよいか、又は洗浄からリンス工程まで1個のステーションで可能になった。このようにして従来装置の約60%設置スペースで製作可能であり,本装置全体が軽量小型に安価に製作できる他,温風乾燥していた従来装置の温風発生手段が不要となって経済的であり,洗浄液ミストの回収と循環で洗剤消耗量が少なく運転経費が安価で且つ,熱源節約で省資源・省エネルギーに寄与し工業的価値が大きい。   According to the present invention, since the cleaning speed is improved by changing the relative speed between the nozzle and the turntable, two conventional cleaning stations may be used, or one station from the cleaning to the rinsing process. It became possible. In this way, it can be manufactured in about 60% of the installation space of the conventional device, and the entire device can be manufactured in a light weight, small size and at a low cost. The cleaning liquid mist is collected and circulated, so that the amount of detergent consumed is small and the operating cost is low. In addition, it contributes to resource and energy savings by saving heat sources and has great industrial value.

図1は本発明による第1の実施形態における全体構成図である。図1(a)は平面図,(b)は正面図,(c)は側面図,図2はその内部の斜視図である。図3は本発明による第2の実施形態における全体構成図である。図3(a)は平面図,(b)は正面図,(c)は側面図,図8は従来の装置における全体構成図である。同じ記号の部位は各図に共通に付与して説明する。ローダーユニット1にウエハマガジンに収容された半導体ウエハがセットされる。洗浄工程ユニット2とリンス工程ユニット3及び乾燥工程ユニット4が連結されてこの入口側にローダーユニット1,出口側の乾燥工程ユニット4の側面にアンローダーユニット5が結合され,一連の流れの中で半導体ウエハ11が洗浄から乾燥までの個別ステーション23(図2に示す)、を移送されて自動運転される。タクトタイムで一斉に半導体ウエハを移送させる移送制御手段と移送機構とを具備し,洗浄液タンク,リンス液タンク,洗浄液及びリンス液の噴射圧力と噴射液量の調整が出来る液ポンプ吐出調整手段を具備する液ポンプと,個別ステーション毎に液の噴射圧力と噴射液量とを所定の値に設定されスピンテーブル28(図7に示す)の回転速度を所定の設定値に設定される洗浄装置とした。半導体ウエハを移送させる駆動機構のうち、潤滑油などで汚損される危惧のある部材を、洗浄・リンス機能を有するユニットのブースに隔離板で仕切って隔離した構成とし、ブース内のクリーン度を保ち、ウエハ仕上がり清浄度を高める構成とした。   FIG. 1 is an overall configuration diagram of a first embodiment according to the present invention. 1A is a plan view, FIG. 1B is a front view, FIG. 1C is a side view, and FIG. 2 is a perspective view of the inside. FIG. 3 is an overall configuration diagram according to the second embodiment of the present invention. 3A is a plan view, FIG. 3B is a front view, FIG. 3C is a side view, and FIG. 8 is an overall configuration diagram of a conventional apparatus. The parts with the same symbols will be explained in common with each figure. A semiconductor wafer accommodated in a wafer magazine is set in the loader unit 1. The washing process unit 2, the rinsing process unit 3 and the drying process unit 4 are connected, and the loader unit 1 is connected to the inlet side, and the unloader unit 5 is connected to the side surface of the drying process unit 4 on the outlet side. The semiconductor wafer 11 is automatically operated by being transferred through an individual station 23 (shown in FIG. 2) from cleaning to drying. Equipped with transfer control means and transfer mechanism for transferring semiconductor wafers simultaneously at tact time, and equipped with cleaning liquid tank, rinsing liquid tank, cleaning liquid and liquid pump discharge adjusting means that can adjust the injection pressure and amount of rinsing liquid And a cleaning device in which the injection pressure and the amount of the injection liquid are set to predetermined values and the rotation speed of the spin table 28 (shown in FIG. 7) is set to a predetermined setting value for each individual station. . Of the drive mechanism that transports semiconductor wafers, the parts that are likely to be contaminated by lubricating oil are separated by separating them from the booth of the unit that has a cleaning and rinsing function with a separator to maintain the cleanliness in the booth. The wafer finished cleanliness is increased.

噴射圧力計29が本体の外部から見えるように設けられていて,洗浄液やリンス液を液量自在に吸上げ,圧力自在に加圧するための吐出調整手段を具備した液ポンプの噴射圧力を見ながら所定の圧力に設定つまみ(図示せず)で設定するが、ウエハの厚さ寸法に応じて破損しない範囲で洗浄力の高い圧力・噴射量に設定される。装置の幅Wの寸法は,洗浄タクトタイムの要求によって洗浄工程ユニット2の個数が決まってくるのであるが,図6におけるウエハコンベアを用いた従来の方式と同じタクトタイムで比較し,本実施例では幅寸法が30%短縮できた。   The injection pressure gauge 29 is provided so that it can be seen from the outside of the main body, and while looking at the injection pressure of the liquid pump provided with the discharge adjusting means for sucking the liquid for washing and rinsing liquid freely and pressurizing it freely. The pressure is set to a predetermined pressure with a setting knob (not shown), but is set to a pressure / injection amount with a high cleaning power within a range not to be damaged according to the thickness dimension of the wafer. The size of the width W of the apparatus is determined by the demand for the cleaning tact time, and the number of cleaning process units 2 is determined. Compared with the conventional method using the wafer conveyor in FIG. Then, the width dimension could be shortened by 30%.

図4に洗浄工程ユニット2の要部を示した,導液管が貫通されたキャップ軸21を有し,噴射ノズル16を設けた可動キャップ22が,個別ステーション23(図2に示す)に半導体ウエハ11がセットされた直後に下方に降りて該ウエハが覆い被せられ,噴射洗浄が30秒間実行される。半導体ウエハ11は図7に示した10本のピラー8を具備したスピンテーブル28に載置され噴射ノズル16との相対速度を加えて洗浄速度を早くした。   FIG. 4 shows a main part of the cleaning process unit 2, which has a cap shaft 21 through which a liquid introduction pipe penetrates, and a movable cap 22 provided with an injection nozzle 16 is a semiconductor in an individual station 23 (shown in FIG. 2) Immediately after the wafer 11 is set, it descends downward to cover the wafer, and spray cleaning is performed for 30 seconds. The semiconductor wafer 11 was placed on the spin table 28 having the ten pillars 8 shown in FIG. 7, and the cleaning speed was increased by adding the relative speed to the spray nozzle 16.

図4に示した半導体ウエハ11の表面には,噴射ノズル16から噴射される洗浄液によって全表面が洗浄されるように1個または複数個の噴射ノズル16が設けられていて,半導体ウエハ水平面に対するノズル16からの洗浄液噴射角度θは実験の結果,最適値が見出された。直径が12インチの半導体ウエハに対して,15°≦θ≦25°の範囲の場合に洗浄速度の最適値があることが見つけ出さられされた。噴射ノズル16は,洗浄液噴射角度θが水平面から10°乃至30°に首振り自在に又は角度調節して固定するように形成されていて,20°に角度を設定した場合が最も有効である。   The surface of the semiconductor wafer 11 shown in FIG. 4 is provided with one or a plurality of spray nozzles 16 so that the entire surface is cleaned by the cleaning liquid sprayed from the spray nozzles 16. As a result of the experiment, the optimum value of the cleaning liquid injection angle θ from 16 was found. It has been found that for a semiconductor wafer having a diameter of 12 inches, there is an optimum value for the cleaning rate in the range of 15 ° ≦ θ ≦ 25 °. The spray nozzle 16 is formed so that the cleaning liquid spray angle θ can be swung freely or adjusted by adjusting the angle from 10 ° to 30 ° from the horizontal plane, and the case where the angle is set to 20 ° is most effective.

半導体ウエハ11は傾斜噴射液19によって揺れ動かないようにウエハ側面で前後からチャックで固定される。洗浄終了後,可動キャップ22が上方に開いて半導体ウエハ11はチャックで左右から掬い上げられて次ステーションに移送される,可動キャップ22が上方へ開いている期間中に、ウエハが前工程ステーションから次工程ステーションに移送されてくる。   The semiconductor wafer 11 is fixed by a chuck from the front and back on the side of the wafer so as not to be shaken by the inclined spray liquid 19. After completion of the cleaning, the movable cap 22 opens upward, and the semiconductor wafer 11 is picked up from the left and right by the chuck and transferred to the next station. During the period in which the movable cap 22 is opened upward, the wafer is removed from the previous process station. It is transferred to the next process station.

このように設定された噴射洗浄で汎用の洗剤を用いて略30秒でウエハ1枚の洗浄が完了して次のステーション23に移動させる。ノズル1個の場合はウエハの表面に万遍無く噴射されるようにウエハ円周に沿うようにノズルを回転させる事が有効であり,ノズルが複数個の場合はウエハ円周に沿って回転させる機構を必要としない。又、複合電解イオン水は洗浄にもリンスにも有効である。   The cleaning of one wafer is completed in about 30 seconds using a general-purpose detergent in the jet cleaning set in this way, and the wafer is moved to the next station 23. In the case of a single nozzle, it is effective to rotate the nozzle along the wafer circumference so that it is uniformly sprayed on the surface of the wafer. When there are a plurality of nozzles, the nozzle is rotated along the wafer circumference. No mechanism is required. The composite electrolytic ionic water is effective for both washing and rinsing.

可動キャップ22の効果は,洗浄中に洗浄液の飛沫がミストを発生して,従来であれば排気ダクトから放出されていた洗浄液やリンス液がキャップ内に閉じ込められて洗浄またはリンス液に接触して液に戻る効果がある。大きい洗浄槽内にウエハコンベア14を設けた従来の方法から個別ステーション23にした効果は洗浄液やリンス液の節約の他に環境の良化にも寄与している。   The effect of the movable cap 22 is that the spray of cleaning liquid generates mist during cleaning, and the cleaning liquid or the rinse liquid that has been discharged from the exhaust duct in the past is trapped in the cap and comes into contact with the cleaning or the rinse liquid. It has the effect of returning to the liquid. The effect of using the individual station 23 from the conventional method in which the wafer conveyor 14 is provided in a large cleaning tank contributes to the improvement of the environment in addition to the saving of the cleaning liquid and the rinsing liquid.

次工程のステーションへとウエハを移送して次々と洗浄工程,リンス工程,乾燥工程へと一斉にウエハ11が決められたタクトタイムで移送される.洗浄及びリンス液の噴射圧力と噴射液量は強弱の設定が出来るよう液ポンプに吐出調整手段が設けられていて,各ステーション毎に所定の値に設定され噴射圧力計29で監視出来るので,従来の圧力が強すぎてウエハを破損さることがなくなった。洗浄速度,水の使用量など経済性を実現した稼動が出来る。   The wafer is transferred to the next process station, and the wafer 11 is transferred to the cleaning process, the rinsing process, and the drying process one after another at a determined tact time. Since the discharge pressure adjusting means is provided in the liquid pump so that the injection pressure and the injection liquid amount of the cleaning and rinsing liquid can be set to be strong and weak, and a predetermined value is set for each station and can be monitored by the injection pressure gauge 29. The pressure on the wafer was too strong to break the wafer. Economical operations such as cleaning speed and water consumption are possible.

前記ウエハ11が移送されて来たウエハの固定は、前後からのチャック掴みで固定され洗浄・リンスが実行される。ウエハに可動キャップが降りてきてリンスの最終工程が終了すると,次のステーションでスピン乾燥工程に移る。   The wafer 11 to which the wafer 11 has been transferred is fixed by chucking from the front and back, and cleaning and rinsing are performed. When the movable cap comes down on the wafer and the final rinse process is completed, the process proceeds to the spin drying process at the next station.

図5に本発明の実施形態における乾燥工程のステーション内部の構成を示す。半導体ウエハ11が真空吸着手段30で下面が固定され,可動キャップ22の中央から貫通形成されたドライエア供給パイプ26でドライエア24が供給され,下方からもドライエア供給パイプ27でドライエア25が供給されると同時にスピンテーブル28がモータで回転し,ウエハ11に付着している液体を振り切るスピン乾燥を実行する。この速度は3000回転/分までの所定の速度が得られるように回転制御手段によって制御される。モータ駆動用の電力周波数可変インバータが設けられて回転数を自在に設定できるようにすることも有効である。可動キャップの上下運動と、スピン作動およびドライエアの噴出作動が連動制御手段によって実行される。   FIG. 5 shows the internal configuration of the station of the drying process in the embodiment of the present invention. When the lower surface of the semiconductor wafer 11 is fixed by the vacuum suction means 30, the dry air 24 is supplied by the dry air supply pipe 26 penetratingly formed from the center of the movable cap 22, and the dry air 25 is also supplied by the dry air supply pipe 27 from below. At the same time, the spin table 28 is rotated by a motor, and spin drying is performed to shake off the liquid adhering to the wafer 11. This speed is controlled by the rotation control means so as to obtain a predetermined speed of up to 3000 rpm. It is also effective to provide a power frequency variable inverter for driving the motor so that the rotation speed can be set freely. The up-and-down movement of the movable cap, the spin operation, and the dry air ejection operation are executed by the interlock control means.

図7に本発明の実施形態におけるウエハ支えの構造を示す。半導体ウエハは直径が12インチにもなると撓みが発生し、洗浄面の水平が歪んで破損の恐れがある。そのため、ウエハ支えのピラー8を10本設けた。ピラー8の頂上の形状は、堤10を有する水平面部9であり、ウエハ11の裏面をこの水平面9で支える。このピラー8の頂上は、ウエハが周縁で保持されるように形成した堤10がある。包絡面が上に開く円錐形である傾斜面または、垂直面の堤10を有するピラー群で、ウエハが接し水辺面移動してウエハをセンターリングする作用を持たせた。   FIG. 7 shows the structure of the wafer support in the embodiment of the present invention. If the diameter of the semiconductor wafer reaches 12 inches, the semiconductor wafer may bend, and the horizontal surface of the cleaning surface may be distorted and damaged. Therefore, ten pillars 8 for supporting the wafer are provided. The top shape of the pillar 8 is a horizontal surface portion 9 having a bank 10, and the back surface of the wafer 11 is supported by the horizontal surface 9. At the top of the pillar 8 is a bank 10 formed so that the wafer is held at the periphery. A pillar group having an inclined surface having a conical shape whose envelope surface opens upward or a vertical surface of the bank 10 has an effect of centering the wafer by contacting the wafer and moving to the water surface.

ウエハは仕上げリンスが終わったら乾燥ステーションであるスピンテーブルに移送されて,真空吸着手段により固定されてスピン回転数3000回転で30秒間,ドライエアの吹きつけを受けて遠心脱水(スピン乾燥)が完了する。高速スピンの為,従来の温風の供給が不要となり温風生成手段のための燃料やスペース節約の効果がある。スピン乾燥が終わったウエハはその側面にあるアンローダユニット5に移送されて取出される。
図3に示した他の実施形態は洗浄・工程ユニット6で洗浄とリンス工程を終了させる間に乾燥ステージで乾燥させる、洗浄兼リンスユニットと、乾燥ユニットの二つのブースとし据付スペースを従来の装置の40%削減した。
After the final rinse, the wafer is transferred to a spin table, which is a drying station, fixed by vacuum suction means, and blown with dry air for 30 seconds at a spin speed of 3000 rpm to complete centrifugal dehydration (spin drying). . The high-speed spin eliminates the need for conventional hot air supply and saves fuel and space for hot air generating means. The wafer after spin drying is transferred to the unloader unit 5 on the side surface and taken out.
The other embodiment shown in FIG. 3 has two booths, a washing and rinsing unit and a drying unit, which are dried on a drying stage while the washing and rinsing process is completed in the washing and rinsing unit 6, and the installation space is a conventional apparatus. Reduced by 40%.

スピンテーブルに固定された半導体ウエハ11の表面(又は/及び)裏面にドライエアを噴出させ,同時にスピンテーブルを高速回転させて遠心乾燥を併用して、急速乾燥させることによって、乾燥ステージでの滞留時間が大幅に短縮され、洗浄とリンス工程ステージで乾燥までさせて、全工程を1ステージで処理する方式とし、洗浄ノズル16とドライエア供給パイプ26付きの可動キャップ22と、ドライエア供給パイプ27付きウエハ保持台からなる一個のステーションだけが収容され、洗浄から乾燥までの全工程が実行されるユニットの入口側にローダーユニット1,出口側の側面にアンローダーユニット5が結合され、半導体ウエハ11が洗浄から乾燥まで処理する1台の個別ステーション23で自動運転される半導体ウエハ枚葉洗浄装置として実現する構成も本発明に含まれる。   Residence time at the drying stage is achieved by spraying dry air onto the front surface (or / and back surface) of the semiconductor wafer 11 fixed to the spin table, and simultaneously rotating the spin table at a high speed to perform rapid drying together with centrifugal drying. Is greatly shortened, and the cleaning and rinsing process stage is dried until the entire process is processed in one stage. The cleaning nozzle 16, the movable cap 22 with the dry air supply pipe 26, and the wafer holding with the dry air supply pipe 27 are held. A loader unit 1 is connected to the entrance side of the unit in which only one station consisting of a table is accommodated, and all processes from cleaning to drying are performed, and an unloader unit 5 is coupled to the side surface on the exit side, so that the semiconductor wafer 11 is cleaned. Semiconductor wafer wafers that are automatically operated at one individual station 23 that processes until drying. Structure for realizing the purification device is also included in the present invention.

据付スペースを従来の装置の40%削減したうえ、装置が小型化され安価に提供でき、運転に必要な消耗材の損失をも減らした。熱源節約で省資源・省エネルギーに寄与し工業的価値が大きい。   In addition to reducing the installation space by 40% compared to conventional equipment, the equipment can be reduced in size and provided at low cost, and the loss of consumables required for operation has also been reduced. Conserving heat sources contributes to resource and energy savings and has great industrial value.

本発明による実施形態における全体構成図。The whole block diagram in embodiment by this invention. 本発明による実施形態における要部の構造図。The structural diagram of the principal part in embodiment by this invention. 本発明による他の実施形態における全体構成図。The whole block diagram in other embodiment by this invention. 本発明による実施形態における要部の構造図。The structural diagram of the principal part in embodiment by this invention. 本発明による実施形態における要部の構造図。The structural diagram of the principal part in embodiment by this invention. 従来の装置の構造図。FIG. 本発明による実施形態における要部の構造図。The structural diagram of the principal part in embodiment by this invention. 従来の装置の全体構成図。The whole block diagram of the conventional apparatus. 従来の装置の洗浄模式図。FIG. 3 is a schematic view of cleaning of a conventional apparatus.

符号の説明Explanation of symbols

1 ローダーユニット
2 洗浄工程ユニット
3 リンス工程ユニット
4 乾燥工程ユニット
5 アンローダーユニット
6 洗浄・リンス工程ユニット
8 ピラー
9 水平面部
10 堤
11 半導体ウエハ
14 ウエハコンベア
16 噴射ノズル
17 搬入口
18 搬出口
19 傾斜噴射液
20 排気ダクト
21 キャップ軸
22 可動キャップ
23 個別ステーション
24 ドライエア
25 ドライエア
26 ドライエア供給パイプ
27 ドライエア供給パイプ
28 スピンテーブル
29 噴射圧力計
30 真空吸着手段
DESCRIPTION OF SYMBOLS 1 Loader unit 2 Cleaning process unit 3 Rinsing process unit 4 Drying process unit 5 Unloader unit 6 Cleaning / rinsing process unit 8 Pillar 9 Horizontal surface part 10 Dike 11 Semiconductor wafer 14 Wafer conveyor 16 Injection nozzle
DESCRIPTION OF SYMBOLS 17 Carry-in port 18 Carry-out port 19 Inclined injection liquid 20 Exhaust duct 21 Cap shaft 22 Movable cap 23 Individual station 24 Dry air 25 Dry air 26 Dry air supply pipe 27 Dry air supply pipe 28 Spin table 29 Injection pressure gauge
30 Vacuum suction means

Claims (12)

洗浄ノズルと可動キャップとウエハ保持台からなる個別ステーションが収容されたブースである洗浄工程ユニット1台、リンス工程ユニット1台および、送気管付き可動キャップとウエハ保持台からなる個別ステーションが収容されたブースである乾燥工程ユニット1台とを有し,可動キャップ開閉動作に連動し半導体ウエハを後工程へ移送させる駆動手段、移送制御手段、洗浄液タンク,リンス液タンク,洗浄液噴射圧力及びリンス液噴射圧力、と各噴射量の調整が出来る液ポンプ吐出調整手段,液ポンプを構成要素とし、噴射ノズル(及び/又は)ウエハ保持台の回転速度設定手段を具備し、所定の値に設定されることを特徴とした半導体ウエハ枚葉洗浄装置。
One washing process unit, one rinsing process unit, which is a booth containing individual stations consisting of a cleaning nozzle, a movable cap, and a wafer holder, and an individual station consisting of a movable cap with an air feeding tube and a wafer holder It has a drying process unit, which is a booth, and is driven by a movable cap opening / closing operation. The drive means, transfer control means, cleaning liquid tank, rinsing liquid tank, cleaning liquid injection pressure and rinsing liquid injection pressure are used to transfer the semiconductor wafer to the subsequent process. And a liquid pump discharge adjusting means capable of adjusting each injection amount, a liquid pump as a constituent element, and a rotation speed setting means for an injection nozzle (and / or) wafer holder, which is set to a predetermined value. A semiconductor wafer single wafer cleaning device.
洗浄ノズルと可動キャップとウエハ保持台からなる個別ステーションが収容されたブースである洗浄及びリンス工程ユニット1台、および、送気管付き可動キャップとウエハ保持台からなる個別ステーションが収容されたブースである乾燥工程ユニット1台とを有し,可動キャップ開閉動作に連動し半導体ウエハを後工程へ移送させる駆動手段、移送制御手段、洗浄液タンク,リンス液タンク,洗浄液噴射圧力及びリンス液噴射圧力、と各噴射量の調整が出来る液ポンプ吐出調整手段,液ポンプを構成要素とし、噴射ノズル(及び/又は)ウエハ保持台の回転速度設定手段を具備し、所定の値に設定されることを特徴とした半導体ウエハ枚葉洗浄装置。
This is a booth in which a single station consisting of a cleaning nozzle, a movable cap and a wafer holding table is housed, and a single station consisting of a cleaning and rinsing process unit and a movable cap with a gas feed tube and a wafer holding table. Each having a drying process unit, driving means for transferring the semiconductor wafer to a subsequent process in conjunction with the opening and closing operation of the movable cap, a transfer control means, a cleaning liquid tank, a rinsing liquid tank, a cleaning liquid injection pressure, and a rinsing liquid injection pressure; A liquid pump discharge adjusting means capable of adjusting the injection amount, a liquid pump as a constituent element, a rotation speed setting means for an injection nozzle (and / or) wafer holder, and a predetermined value are set. Semiconductor wafer single wafer cleaning equipment.
洗浄ノズルと送気管付きの可動キャップと送気管付きウエハ保持台からなる一個のステーションが収容され洗浄から乾燥までの全工程が実行される洗浄・乾燥ユニット,並びに、可動キャップ開閉動作に連動し半導体ウエハを後工程へ移送させる駆動手段、移送制御手段、洗浄液タンク,リンス液タンクを有する洗浄装置において,洗浄液及びリンス液噴射圧力、と各噴射量の調整が出来る液ポンプ吐出調整手段と液ポンプ,噴射ノズル(及び/又は)ウエハ保持台の回転速度の設定手段、噴射角度の設定手段、各液の噴射圧力設定手段と噴射液量設定手段とを具備し、洗浄から乾燥までの工程が一つのブースで実行されることを特徴とした半導体ウエハ枚葉洗浄装置。
A cleaning / drying unit that houses a single station consisting of a cleaning nozzle, a movable cap with an air supply tube, and a wafer holder with an air supply tube, and performs all processes from cleaning to drying. In a cleaning apparatus having a driving means for transferring a wafer to a subsequent process, a transfer control means, a cleaning liquid tank, and a rinsing liquid tank, a liquid pump discharge adjusting means and a liquid pump capable of adjusting the cleaning liquid and the rinsing liquid injection pressure and each injection amount, The apparatus includes a spray nozzle (and / or) wafer holding table rotational speed setting means, a spray angle setting means, a spray pressure setting means for each liquid, and a spray liquid amount setting means. A semiconductor wafer single wafer cleaning apparatus, which is executed at a booth.
噴射ノズルを設けた可動キャップがウエハに覆う様に各ステーションに設けられ、噴射ノズルの噴射方向が、ウエハ表面となす角度が10乃至25度の範囲で調整ができる首振り自在または,角度を決めて固定されていて,各タンクの液が液ポンプを介して導液管でノズルに導かれる請求項1乃至3記載の半導体ウエハ枚葉洗浄装置。
A movable cap provided with an injection nozzle is provided at each station so as to cover the wafer, and the injection direction of the injection nozzle can be adjusted within a range of 10 to 25 degrees with respect to the wafer surface. 4. A semiconductor wafer single wafer cleaning apparatus according to claim 1, wherein the liquid in each tank is guided to a nozzle by a liquid guide pipe via a liquid pump.
乾燥工程ユニットへ決められたタクトタイムで移送されて来たウエハの固定は、ウエハの側面で前後からのチャック掴みの固定機構(及び/又は)、ウエハの下面での真空吸引チャックを具備した請求項1乃至4記載の半導体ウエハ枚葉洗浄装置。
The fixing of the wafer transferred to the drying process unit at a predetermined tact time includes a fixing mechanism (and / or) for chucking the chuck from the front and back on the side surface of the wafer, and a vacuum suction chuck on the lower surface of the wafer. Item 5. A semiconductor wafer single wafer cleaning apparatus according to Item 1.
洗浄・リンス工程ユニット、乾燥工程ユニットへと一斉にウエハを決められたタクトタイムで移送されて来たウエハの固定は、ウエハの側面で前後からのチャック掴みの固定機構(又は/及び)ウエハを下面で支える複数のピラーを具備しウエハ撓みを防いで保持することを特徴とした請求項1乃至5記載の半導体ウエハ枚葉洗浄装置。
The wafers that have been transferred to the cleaning / rinsing process unit and the drying process unit all at the same tact time are fixed to the chuck holding mechanism (or / and) on the side of the wafer from the front and back. 6. The semiconductor wafer single wafer cleaning apparatus according to claim 1, further comprising a plurality of pillars supported by the lower surface and holding the wafer while preventing the wafer from bending.
前記ウエハを下面で支える複数の前記ピラーは、ウエハ平面を載置する水平面の頂上部を有するピラーである事を特徴とする請求項1乃至6記載の半導体ウエハ枚葉洗浄装置。
7. The semiconductor wafer single wafer cleaning apparatus according to claim 1, wherein the plurality of pillars supporting the wafer on the lower surface are pillars having top portions of horizontal surfaces on which the wafer plane is placed.
前記ウエハを下面で支える複数の前記ピラーの頂上部は、ウエハ周辺の平面を載置する水平面の外周部近傍に、垂直部または傾斜面を有する頂上部を有するピラーでウエハ周辺を外周部側面で接しウエハをセンターリングすることを特徴とする請求項1乃至7記載の半導体ウエハ枚葉洗浄装置。
The tops of the plurality of pillars supporting the wafer on the lower surface are pillars having tops having vertical or inclined surfaces in the vicinity of the outer periphery of the horizontal surface on which the plane around the wafer is placed. 8. The semiconductor wafer single wafer cleaning apparatus according to claim 1, wherein the wafer is contacted and centered.
スピンテーブルに真空吸着(及び/又は)機械的チャックされたウエハ裏面に対して開口するドライエア供給パイプが設けられ、ドライエア供給パイプを設けた可動キャップが覆い被せられるように個別ステーションに設けられ,該ドライエア供給パイプの開口部から半導体ウエハの裏面および表面に常温のドライエアを噴出させ,洗浄装置の据付面積を抑えるために温風乾燥の代わりにドライエア乾燥を行うことを特徴とした請求項1乃至8記載の半導体ウエハ枚葉洗浄装置。
A dry air supply pipe that opens to the back surface of the wafer vacuum chucked (and / or) mechanically chucked on the spin table is provided, and is provided at an individual station so that a movable cap provided with the dry air supply pipe is covered. 9. Dry air drying is performed instead of hot air drying in order to blow dry air at room temperature from the opening of the dry air supply pipe to the back surface and front surface of the semiconductor wafer and to reduce the installation area of the cleaning device. The semiconductor wafer single wafer cleaning apparatus as described.
スピンテーブルに固定された半導体ウエハの表面(又は/及び)裏面にドライエアを噴出させ,同時にスピンテーブルを高速回転させて遠心乾燥を併用して、急速乾燥させることを特徴とする請求項1乃至9記載の半導体ウエハ枚葉洗浄装置。
10. A dry air is jetted onto the front surface (or / and) the back surface of a semiconductor wafer fixed to the spin table, and at the same time, the spin table is rotated at a high speed to perform rapid drying together with centrifugal drying. The semiconductor wafer single wafer cleaning apparatus as described.
請求項1乃至10記載の半導体ウエハ枚葉洗浄装置洗浄装置において,シリコンウエハを洗浄ステージへ載置する手段であるローダユニットが、洗浄機能を有するユニットに連結され,且つ乾燥機能を有するユニットに,アンローダユニットの側面位置が連結された半導体ウエハ枚葉洗浄装置。
11. The semiconductor wafer single wafer cleaning apparatus cleaning apparatus according to claim 1, wherein a loader unit, which is a means for placing a silicon wafer on a cleaning stage, is connected to a unit having a cleaning function and has a drying function. A semiconductor wafer single wafer cleaning apparatus in which side surfaces of unloader units are connected.
半導体ウエハを移送させる駆動機構のうち、汚損される危惧のある部材を、洗浄・リンス機能を有するユニットのブース内から隔離した構成とし、ブース内のクリーン度を保つことを特徴とした請求項1乃至11記載の半導体ウエハ枚葉洗浄装置。   2. A drive mechanism for transferring a semiconductor wafer, wherein a member that is likely to be contaminated is isolated from the booth of a unit having a cleaning and rinsing function, and the cleanliness in the booth is maintained. The semiconductor wafer single wafer cleaning apparatus of thru | or 11.
JP2005118987A 2005-04-15 2005-04-15 Apparatus for cleaning semiconductor wafer sheet Pending JP2006302974A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112735983A (en) * 2020-12-30 2021-04-30 上海至纯洁净系统科技股份有限公司 Single wafer carrier washs high integrated device
CN116623263A (en) * 2023-07-24 2023-08-22 深圳市顺益丰实业有限公司 Adjusting device for film coating uniformity of semiconductor device

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JP2005032948A (en) * 2003-07-11 2005-02-03 Sansha Electric Mfg Co Ltd Method for cleaning semiconductor wafer and cleaning device

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JP2000100768A (en) * 1998-09-28 2000-04-07 Tokyo Electron Ltd Rotary treating unit
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Cited By (4)

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Publication number Priority date Publication date Assignee Title
CN112735983A (en) * 2020-12-30 2021-04-30 上海至纯洁净系统科技股份有限公司 Single wafer carrier washs high integrated device
CN112735983B (en) * 2020-12-30 2022-12-16 上海至纯洁净系统科技股份有限公司 Single-wafer carrier cleaning high-integration device
CN116623263A (en) * 2023-07-24 2023-08-22 深圳市顺益丰实业有限公司 Adjusting device for film coating uniformity of semiconductor device
CN116623263B (en) * 2023-07-24 2023-10-31 深圳市顺益丰实业有限公司 Adjusting device for film coating uniformity of semiconductor device

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