JP6502037B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for substrate processing using a chemical solution. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, photomasks Substrates, ceramic substrates, substrates for solar cells, and the like.

  In the manufacturing process of semiconductor devices and liquid crystal display devices, there is a single-wafer type substrate processing apparatus that processes substrates one by one in order to process a surface of a substrate such as a semiconductor wafer or a glass substrate for liquid crystal display panel with a chemical solution. May be used. In a single-wafer substrate processing apparatus, a bottomed cylindrical processing cup accommodating a substrate holding and rotating mechanism for holding and rotating a substrate substantially horizontally and a substrate holding and rotating mechanism in a processing chamber partitioned by partition walls. And a chemical solution nozzle for supplying a chemical solution to the substrate held by the substrate holding and rotating mechanism.

The processing cup includes a fixedly accommodated cup, and a guard provided so as to be movable up and down with respect to the cup and capable of receiving a chemical solution scattered from a substrate rotated by the substrate holding and rotating mechanism. . The treatment liquid received by the guard is supplied to the cup along the inner wall of the guard.
In such a substrate processing apparatus, a plurality of types of chemical solutions may be used. A combination of a plurality of chemical solutions comprises a sulfuric acid-containing solution containing sulfuric acid such as sulfuric acid / hydrogen peroxide mixture (SPM) and an organic solvent such as isopropyl alcohol (IPA) In the case of a combination which causes a danger of contact (ie, a combination which is not suitable for contact) such as a combination of the following, in order to reliably prevent the contact of these chemical solutions, it is usually shown in Patent Document 1 below. As described above, the processing chamber is different for each type of chemical solution.

Unexamined-Japanese-Patent No. 2007-103732

However, in order to improve the productivity, it may be desirable to complete the cleaning process in one processing chamber, even if the combination of a plurality of chemical solutions used for substrate processing is not suitable for compatibility. In order to meet this demand, it is necessary to surely prevent the chemical solution from being mixed in the substrate holding and rotating mechanism and the cup, as well as in the processing chamber.
Therefore, it is an object of the present invention to reliably prevent the chemical reaction of a combination of a plurality of chemical solutions used for substrate processing, even if the combination is not suitable for the collision, and to process the substrate processing To provide a substrate processing apparatus and a substrate processing method that can be completed in one processing chamber.

In order to achieve the above object, the invention according to claim 1 has a processing chamber, and a substrate holding device having a spin base rotatable about a predetermined rotation axis and rotating about the rotation axis while holding the substrate. A rotation mechanism, comprising: a substrate holding and rotating mechanism disposed in the processing chamber; and a process provided so as to surround the periphery of the substrate holding and rotating mechanism and discharged from the substrate rotated by the substrate holding and rotating mechanism. An annular cup for storing a liquid, a first chemical solution supply unit for supplying a first chemical solution to a substrate held by the substrate holding and rotating mechanism, and a substrate holding and rotating mechanism held by the substrate holding and rotating mechanism Second chemical solution supply means for supplying a second chemical solution different in type from the first chemical solution to the substrate, and phosphorus for supplying a rinse solution to the substrate held by the substrate holding and rotating mechanism A cleaning solution nozzle having a solution supply means, a cleaning solution discharge port for supplying a cleaning solution to a cup inner wall which is an inner wall of the cup and / or a base wall which is a wall surface of an outer peripheral portion of the spin base; And a common pipe connected to the drainage / recovery port formed at the bottom of the cup, and the common pipe connected to the common pipe, for recovering the first chemical solution or the second chemical solution , A drain pipe connected to the common pipe, a switching valve for switching the circulation destination of the liquid passing through the common pipe between the collection pipe and the liquid drain pipe, the first chemical solution supply Means and the second chemical liquid supply means to control the first chemical liquid supply process of supplying the first chemical liquid to the substrate rotated by the substrate holding and rotating mechanism; and A second chemical solution supplying process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism, and the second chemical solution after the first chemical solution supplying process is completed Prior to the start of the supply process, a rinse process is performed by supplying a rinse liquid to the substrate rotated by the substrate holding and rotating mechanism to rinse out the first chemical solution adhering to the surface of the substrate. And means for controlling the cleaning liquid supply means to discharge the cleaning liquid from the cleaning liquid discharge port prior to the start of the second chemical liquid supply step after the end of the rinse step, to the inner wall of the cup and / or the base wall surface. In parallel with the cleaning control means for supplying the cleaning solution and the supply of the cleaning solution by the cleaning control means, the switching valve is controlled to distribute the fluid through the common pipe to the drainage pipe. Provided is a substrate processing apparatus including a distribution destination setting control unit to be set .

According to this configuration, the first chemical liquid supply process and the second chemical liquid supply process are performed in this order in the common processing chamber. In addition, the cleaning liquid is supplied to the inner wall and / or the base wall of the cup prior to the start of the second chemical liquid supply process after the end of the rinse process.
When the cleaning liquid is supplied to the inner wall of the cup and / or the base wall prior to the start of the second chemical liquid supplying step after the end of the rinsing step, the supply of the cleaning liquid allows the first chemical liquid to be supplied from the cup inner wall and / or the base wall. It can be removed. Therefore, at the start of the second chemical solution supplying step, the first chemical solution does not remain on the inner wall or the base wall surface of the cup, and therefore, the first chemical solution and the second chemical solution are reliably mixed in the second chemical solution supplying step. It can prevent.

As described above, even if the combination of a plurality of types of chemical solutions (first and second chemical solutions) used for substrate processing is not suitable for the mixture, the mixture is reliably prevented from being mixed. A substrate processing apparatus capable of completing substrate processing in one processing chamber can be provided.
In this specification, "a combination which is not suitable for compatibility" means not only "a combination which causes danger in the compatibility" but also "a combination which produces a reaction product through a compatibility" and "a combination which causes a reaction. "Combination that makes separation and recovery difficult" is also included. The “combination for producing a reaction product by contact” is a combination of an acid and an alkali, and the like, and there is a possibility that the inside of the apparatus may be contaminated by a salt generated by contact. Moreover, HF (hydrofluoric acid), SPM (a mixed solution of sulfuric acid and hydrogen peroxide solution) and the like can be mentioned as the “combination in which separation and recovery become difficult due to contact with each other”.
Further, as described in claim 2, the cleaning solution nozzle may include a second cleaning solution nozzle having a second cleaning solution discharge port for supplying the cleaning solution to the inner wall of the cup.
In order to achieve the above object, the invention according to claim 3 has a processing chamber, and a substrate holding device having a spin base rotatable about a predetermined rotation axis and rotating about the rotation axis while holding the substrate. A rotation mechanism, comprising: a substrate holding and rotating mechanism disposed in the processing chamber; and a process provided so as to surround the periphery of the substrate holding and rotating mechanism and discharged from the substrate rotated by the substrate holding and rotating mechanism. An annular cup for storing a liquid, a first chemical solution supply unit for supplying a first chemical solution to a substrate held by the substrate holding and rotating mechanism, and a substrate holding and rotating mechanism held by the substrate holding and rotating mechanism A second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the substrate, and a base wall surface which is a wall surface of the outer peripheral portion of the spin base are disposed opposite to each other. A cleaning solution nozzle having a first cleaning solution discharge port for discharging a cleaning solution toward a wall surface, a cleaning solution supply unit for supplying the cleaning solution to the cleaning solution nozzle, the first chemical solution supply unit, and the second chemical solution supply Means for controlling the substrate holding and rotating mechanism to supply the first chemical solution to the substrate being rotated by the substrate holding and rotating mechanism, and after the first chemical solution supplying step, the substrate is rotated by the substrate holding and rotating mechanism. Rotation processing control means for performing a second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate, and controlling the cleaning solution supply means to perform the second chemical solution supply process. After completion, prior to the start of the second chemical liquid supply process, and / or during and / or after the execution of the second chemical liquid supply process, the cleaning liquid is discharged from the first cleaning liquid discharge port. And a wash control means for supplying a cleaning liquid to said base wall, to provide a substrate processing apparatus.
According to this configuration, the first chemical liquid supply process and the second chemical liquid supply process are performed in this order in the common processing chamber. In addition, after the end of the first chemical solution supply process, prior to the start of the second chemical solution supply process, and / or during and / or after the execution of the second chemical solution supply process, the cleaning liquid is supplied to the cup inner wall and / or the base wall surface. Ru.
When the cleaning liquid is supplied to the inner wall and / or base wall of the cup prior to the start of the second chemical liquid supplying step after the completion of the first chemical liquid supplying step, the supply of the cleaning liquid makes it possible to 1 It is possible to remove the drug solution. Therefore, at the start of the second chemical solution supplying step, the first chemical solution does not remain on the inner wall or the base wall surface of the cup, and therefore, the first chemical solution and the second chemical solution are reliably mixed in the second chemical solution supplying step. It can prevent.
In addition, when the cleaning liquid is supplied to the inner wall and / or the base wall of the cup in parallel with and / or after the second chemical liquid supplying step, the inner wall and / or the base of the cup can be supplied by supplying the cleaning liquid. The second chemical solution can be removed from the wall surface. Therefore, the second chemical solution does not remain on the inner wall and / or the base wall of the cup at the start of the next first chemical solution supply process of substrate processing, and accordingly, the first chemical solution and the second chemical solution in the first chemical solution supply process. It is possible to reliably prevent
As described above, even if the combination of a plurality of types of chemical solutions (first and second chemical solutions) used for substrate processing is not suitable for the mixture, the mixture is reliably prevented from being mixed. A substrate processing apparatus capable of completing substrate processing in one processing chamber can be provided.
As described in claim 4, the cleaning solution nozzle may be disposed in a state where the first cleaning solution discharge port is directed obliquely upward.
According to this configuration, the cleaning solution nozzle can be disposed below the side of the base wall surface. When the cleaning solution nozzle is disposed on the side of the base wall surface, the cleaning solution nozzle intervenes between the spin base and the cup in plan view, resulting in an increase in the size of the substrate processing apparatus. The substrate processing apparatus does not increase in size because it is not disposed in one direction. Therefore, the cleaning liquid can be supplied to the base wall without increasing the size of the substrate processing apparatus.
In addition, since the cleaning liquid is supplied obliquely to the base wall surface, the first or second chemical solution adhering to the bottom surface of the outer peripheral portion of the spin base can be favorably removed.

According to a fifth aspect of the present invention, there is provided a substrate holding apparatus comprising a processing chamber and a spin base rotatable about a predetermined rotation axis, the substrate holding the substrate and rotating about the rotation axis. A rotating mechanism, comprising: a substrate holding and rotating mechanism disposed in the processing chamber; and an annular ring surrounding the periphery of the substrate holding and rotating mechanism, which is discharged from the substrate rotated by the substrate holding and rotating mechanism. An annular cup for storing a processing solution, wherein the cup has a drain port formed on the bottom wall, and a first for supplying the first chemical solution to the substrate held by the substrate holding and rotating mechanism. The chemical solution supply means, a second chemical solution supply means for supplying a second chemical solution different in type from the first chemical solution to the substrate held by the substrate holding and rotating mechanism, and a cup which is an inner wall of the cup A second cleaning liquid discharge port for supplying the cleaning liquid to the first and the second cleaning liquid discharge ports, which are arranged in a plurality of areas along the circumferential direction of the cup on the side of the substrate holding and rotating mechanism and close to the drainage port. Controlling the cleaning liquid nozzle having the second cleaning liquid outlet, the cleaning liquid supply means for supplying the cleaning liquid to the cleaning liquid nozzle, and the first chemical liquid supply means and the second chemical liquid supply means; The first chemical solution supplying step of supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism, and the substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supplying step The rotary treatment control means for performing a second chemical solution supply process for supplying a second chemical solution different in type from the chemical solution, and the cleaning solution supply means are controlled to complete the second medicine after the first chemical solution supply process is completed. Prior to the start of the supply step and / or during and / or after the execution of the second chemical liquid supply step, the cleaning control is performed to discharge the cleaning liquid from the second cleaning liquid discharge port to supply the cleaning liquid to the inner wall of the cup And a substrate processing apparatus.
According to this configuration, the first chemical liquid supply process and the second chemical liquid supply process are performed in this order in the common processing chamber. In addition, after the end of the first chemical solution supply process, prior to the start of the second chemical solution supply process, and / or during and / or after the execution of the second chemical solution supply process, the cleaning liquid is supplied to the cup inner wall and / or the base wall surface. Ru.
When the cleaning liquid is supplied to the inner wall and / or base wall of the cup prior to the start of the second chemical liquid supplying step after the completion of the first chemical liquid supplying step, the supply of the cleaning liquid makes it possible to 1 It is possible to remove the drug solution. Therefore, at the start of the second chemical solution supplying step, the first chemical solution does not remain on the inner wall or the base wall surface of the cup, and therefore, the first chemical solution and the second chemical solution are reliably mixed in the second chemical solution supplying step. It can prevent.
In addition, when the cleaning liquid is supplied to the inner wall and / or the base wall of the cup in parallel with and / or after the second chemical liquid supplying step, the inner wall and / or the base of the cup can be supplied by supplying the cleaning liquid. The second chemical solution can be removed from the wall surface. Therefore, the second chemical solution does not remain on the inner wall and / or the base wall of the cup at the start of the next first chemical solution supply process of substrate processing, and accordingly, the first chemical solution and the second chemical solution in the first chemical solution supply process. It is possible to reliably prevent
As described above, even if the combination of a plurality of types of chemical solutions (first and second chemical solutions) used for substrate processing is not suitable for the mixture, the mixture is reliably prevented from being mixed. A substrate processing apparatus capable of completing substrate processing in one processing chamber can be provided.
Further, since the second cleaning liquid discharge port is disposed in a region not close to the drainage port, the cleaning liquid discharged from each second cleaning liquid discharge port is directed to the inside of the cup toward the drainage port and the circle of the cup It moves in the circumferential direction and is led from the drainage port to the common piping. That is, it is possible to increase the distance the cleaning liquid travels in the cup. Thereby, the first or second chemical solution adhering to the inside of the cup can be efficiently removed.
The invention according to claim 6 further includes a rinse liquid supply means for supplying a rinse liquid to the substrate held by the substrate holding and rotating mechanism, and the rotation processing control means comprises a step of the first chemical liquid supply step. After completion, prior to the start of the second chemical liquid supply process, the rinse liquid is supplied to the substrate rotated by the substrate holding and rotating mechanism by the rinse liquid supply unit, and the first liquid adhering to the surface of the substrate The method further includes rinse control means for performing a rinse step of washing out the chemical solution, wherein the wash control means performs washing in parallel with the rinse step and / or after the end of the rinse step prior to the start of the second chemical solution supply step. comprising a first cleaning control means for supplying a washing liquid, a substrate processing apparatus according to any one of claims 3-5.

According to this configuration, the first chemical liquid supply process, the rinse process, and the second chemical liquid supply process are performed in this order in the common processing chamber. Further, in parallel with the rinse process after the first chemical solution supply process and / or prior to the start of the second chemical solution supply process after the completion of the rinse process, the cleaning solution is supplied to the cup inner wall and / or the base wall surface.
After the completion of the first chemical solution supplying step, there is a possibility that the first chemical solution is adhering (remaining) on the inner wall of the cup or the base wall surface. If the second chemical liquid supply process is started in this state, the first chemical liquid and the second chemical liquid may be mixed in the second chemical liquid supply process.

According to claim 6, in parallel to the rinsing step performed after the first chemical liquid supplying step, and / or the wash solution is supplied prior to the start of the rinse step after the second chemical liquid supplying step, thereby, the second chemical agent Prior to the start of the supply step, the first chemical solution is removed from the cup inner wall and / or the base wall. Therefore, at the start of the second chemical solution supplying step, the first chemical solution does not remain on the inner wall or the base wall surface of the cup, and therefore, the first chemical solution and the second chemical solution are reliably mixed in the second chemical solution supplying step. It can prevent.
In order to achieve the above object, the invention according to claim 7 has a processing chamber, and a substrate holding device having a spin base rotatable about a predetermined rotation axis and rotating about the rotation axis while holding the substrate. A rotation mechanism, comprising: a substrate holding and rotating mechanism disposed in the processing chamber; and a process provided so as to surround the periphery of the substrate holding and rotating mechanism and discharged from the substrate rotated by the substrate holding and rotating mechanism. An annular cup for storing a liquid, a first chemical solution supply unit for supplying a first chemical solution to a substrate held by the substrate holding and rotating mechanism, and a substrate holding and rotating mechanism held by the substrate holding and rotating mechanism Second chemical solution supply means for supplying a second chemical solution different in type from the first chemical solution to the substrate, and phosphorus for supplying a rinse solution to the substrate held by the substrate holding and rotating mechanism A liquid supply means, a washing liquid nozzle having a washing liquid outlet for discharging a washing liquid toward the base wall surface which is a wall surface of the outer periphery of the spin base; and a washing liquid supply means for supplying the washing liquid to the washing liquid nozzle. A first chemical liquid supply process of supplying a first chemical liquid to a substrate rotated by the substrate holding and rotating mechanism by controlling the first chemical liquid supply means and the second chemical liquid supply means, and the first chemical liquid supply process After the step, a second chemical solution supplying step of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism, and the end of the first chemical solution supplying step 2) A rinse liquid is supplied to the substrate rotated by the substrate holding and rotating mechanism prior to the start of the chemical liquid supply process to rinse the first chemical liquid adhering to the surface of the substrate. A rotary process control means for performing the step and the cleaning solution supply means in parallel with the rinse step and / or prior to the start of the second chemical solution supply step after the rinse step is completed, the base And a cleaning control unit that supplies a cleaning solution to the wall surface.
According to this configuration, the first chemical liquid supply process and the second chemical liquid supply process are performed in this order in the common processing chamber. Further, in parallel with the rinse process performed after the first chemical solution supply process and / or prior to the start of the second chemical solution supply process after the rinse process, the cleaning liquid is supplied to the base wall surface. Thereby, the first chemical solution is removed from the base wall surface prior to the start of the second chemical solution supplying process. Therefore, at the start of the second chemical solution supplying step, the first chemical solution does not remain on the base wall surface, and therefore, the first chemical solution and the second chemical solution can be reliably prevented from being mixed in the second chemical solution supplying step.
As described above, even if the combination of a plurality of types of chemical solutions (first and second chemical solutions) used for substrate processing is not suitable for the mixture, the mixture is reliably prevented from being mixed. A substrate processing apparatus capable of completing substrate processing in one processing chamber can be provided.

The invention according to claim 8, wherein the wash control means, in parallel with the second chemical liquid supplying step, and / or a second wash control means for supplying a cleaning liquid after completion of the second chemical-liquid supplying step The substrate processing apparatus according to any one of claims 1 to 7 .
According to this configuration, the cleaning liquid is supplied to the inner wall and / or the base wall of the cup in parallel with the second chemical liquid supplying step.

If the second chemical solution adheres (remains) to the inner wall of the cup or the base wall after completion of the second chemical solution supply process, the first chemical solution supply process for the next substrate processing is started with the second chemical solution remaining. By doing this, there is a possibility that the first chemical solution and the second chemical solution may be mixed.
In the eighth aspect , the cleaning liquid is supplied to the inner wall and / or the base wall of the cup in parallel with the second chemical liquid supplying step and / or after the end of the second chemical liquid supplying step, whereby the inner wall and / or the base of the cup The second chemical solution can be removed from the wall surface. Therefore, at the start of the next substrate processing, the second chemical solution does not remain on the inner wall or the base wall surface of the cup, and accordingly, the first chemical solution and the second chemical solution are mixed in the first chemical solution supplying step of the next substrate processing. Can be reliably prevented.

According to the invention as set forth in claim 9 , the spin process control means rotates the substrate by the substrate holding and rotating mechanism after the completion of the second chemical liquid supply process to spin off the liquid component on the surface of the substrate. further comprising a spin drying control means for executing the cleaning control means includes a third cleaning control means for supplying the parallel wash solution to the spin drying step, in any one of claims 1-8 It is a substrate processing apparatus as described.

According to this configuration, the cleaning liquid is supplied to the inner wall and / or the base wall of the cup in parallel with the spin dry process.
If the second chemical solution adheres (remains) to the inner wall of the cup or the base wall after the spin dry process is completed, start the first chemical solution supply process of the next substrate processing while the second chemical solution remains. As a result, there is a possibility that the first chemical solution and the second chemical solution may be mixed.

According to the ninth aspect of the present invention , the washing liquid is supplied to the inner wall and / or the base wall of the cup in parallel with the spin dry process, whereby the second chemical solution can be removed from the inner wall and / or the base wall of the cup. Therefore, after the end of the spin-drying process, the second chemical solution does not remain on the inner wall or the base wall of the cup, and accordingly, the first chemical solution and the second chemical solution are mixed in the first chemical solution supply process of the next substrate processing. Can be reliably prevented.

The invention according to claim 10 is a method for recovering the first chemical solution or the second chemical solution connected to the common piping connected to the drainage / recovery port formed at the bottom of the cup and the common piping. A recovery valve, a drainage pipe connected to the common piping, a switching valve for switching the circulation destination of the liquid passing through the common piping, between the recovery piping and the drainage piping, and the cleaning control unit 10. The method according to any one of claims 3 to 9, further comprising: distribution destination setting control means for controlling the switching valve to set the circulation destination of the liquid passing through the common piping to the drainage piping in parallel with the supply of the cleaning liquid. It is the substrate processing apparatus as described in any one.

  According to this configuration, in parallel to the supply of the cleaning liquid to the cup inner wall and / or the base wall surface, the circulation destination of the liquid passing through the common piping is set to the drainage piping. Therefore, the cleaning liquid supplied to the inner wall and / or the base wall of the cup is led to the common piping through the drainage / recovery port of the cup and then to the drainage piping. Therefore, even if the first chemical solution or the second chemical solution adheres to the pipe wall of the common pipe in the first chemical liquid supply process or the second chemical liquid supply process, they adhere to the pipe wall by the cleaning liquid flowing through the common pipe. The first chemical solution or the second chemical solution can be washed away. Thereby, it can prevent reliably that a 1st chemical | medical solution and a 2nd chemical | medical solution are mixed by the pipe wall of common piping.

As described in claim 11, the first chemical solution may be a sulfuric acid-containing liquid containing sulfuric acid. The second chemical solution may be an organic solvent. The sulfuric acid-containing solution contains SPM and sulfuric acid. The organic solvent comprises at least one of IPA, methanol, ethanol, HFE (hydrofluoroether) and acetone.
According to a twelfth aspect of the present invention, there is provided a substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating about the rotation axis while holding a substrate. A cup is provided so as to surround the periphery of the substrate holding and rotating mechanism, for storing the processing liquid discharged from the substrate being rotated by the substrate holding and rotating mechanism, and a cup inner wall and / or an inner wall of the cup. Alternatively, it is connected to the cleaning solution nozzle for supplying the cleaning solution to the base wall surface which is the wall surface of the outer periphery of the spin base, the common pipe connected to the drainage / recovery port formed at the bottom of the cup, and the common pipe It is a method of processing a substrate using a substrate processing apparatus including the a recovery pipe for recovering the first liquid chemical and the second chemical liquid, the drainage pipe and which is connected to the common pipe A first chemical solution supplying step of supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism; and a substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supplying step. A second chemical solution supply process for supplying a second chemical solution different in type from the first chemical solution, and after completion of the first chemical solution supply process, rotation is performed by the substrate holding and rotating mechanism prior to start of the second chemical solution supply process. A rinse solution is supplied to the substrate being cleaned to rinse out the first chemical solution adhering to the surface of the substrate, and after the rinse process is completed, prior to the start of the second chemical solution supply process, the cleaning solution state by ejecting a cleaning liquid from the nozzle, seen including a cleaning solution supply step of supplying a cleaning liquid to the cup inner wall, said cleaning liquid supplying step, to set the distribution destination of the liquid passing through the shared pipe to the drain pipe Run, to provide a substrate processing method.

According to this method, the same effects as the effects described in relation to claim 1 are exhibited.
According to a thirteenth aspect of the present invention, there is provided a substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating about the rotation axis while holding a substrate. It is provided so as to surround the periphery of the substrate holding and rotating mechanism, and is a cup for storing the processing liquid discharged from the substrate rotated by the substrate holding and rotating mechanism, and a wall surface of an outer peripheral portion of the spin base. A method of processing a substrate using a substrate processing apparatus including: a cleaning solution nozzle disposed opposite to a base wall surface and having a first cleaning solution discharge port for discharging a cleaning solution toward the base wall surface, the substrate processing apparatus It is rotated by the substrate holding and rotating mechanism after the first chemical solution supplying process of supplying the first chemical solution to the substrate rotated by the rotating mechanism, and after the first chemical solution supplying process. And / or prior to the start of the second chemical liquid supply process after the completion of the first chemical liquid supply process, and / or after the second chemical liquid supply process of supplying a second chemical liquid different in type from the first chemical liquid to the substrate. A substrate processing method including: a cleaning liquid supply step of discharging a cleaning liquid from the first cleaning liquid discharge port during and / or after execution of the second chemical liquid supply step and supplying the cleaning liquid to the base wall surface. .
According to this method, the same effect as the effect described in relation to claim 3 is exerted.
As described in claim 14, the cleaning solution nozzle may be disposed with the first cleaning solution discharge port directed obliquely upward.
According to this method, the same effects as the effects described in relation to claim 4 are exerted.
According to a fifteenth aspect of the present invention, there is provided a substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating about the rotation axis while holding a substrate. The cup is provided in an annular shape surrounding the periphery of the substrate holding and rotating mechanism, and is a cup for storing the processing liquid discharged from the substrate rotated by the substrate holding and rotating mechanism, and a drainage port is formed in the bottom wall And a second cleaning solution discharge port for supplying a cleaning solution to the inner wall of the cup, which is the inner wall of the cup, and a plurality of the cleaning solution are arranged along the circumferential direction of the cup on the side of the substrate holding and rotating mechanism. A method of processing a substrate using a substrate processing apparatus including a cleaning solution nozzle having a second cleaning solution outlet not disposed in a region close to the drainage port, The first chemical solution supplying step of supplying the first chemical solution to the substrate rotated by the rotating mechanism, and the substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supplying step A second chemical solution supply process for supplying different types of second chemical solutions, and after completion of the first chemical solution supply process prior to the start of the second chemical solution supply process, and / or during execution of the second chemical solution supply process, And / or after the execution, a cleaning liquid is discharged from the second cleaning liquid discharge port, and a cleaning liquid supply step of supplying the cleaning liquid to the inner wall of the cup is provided.
According to this method, the same effects as the effects described in the fifth aspect are exhibited.
In the invention according to claim 16, in the substrate processing method, after the completion of the first chemical liquid supply process and prior to the start of the second chemical liquid supply process, a rinse liquid is applied to the substrate rotated by the substrate holding and rotating mechanism. And washing the first chemical solution adhering to the surface of the substrate, wherein the cleaning solution supplying step is performed in parallel with the rinse step and / or after the rinse step is completed. The substrate processing method according to any one of claims 13 to 15, further comprising: a first cleaning liquid supply step of discharging the cleaning liquid from the cleaning liquid nozzle prior to the start of the second chemical liquid supplying step.

According to this method, the same effects as the effects described in relation to claim 6 are exerted.
In order to achieve the above object, the invention according to claim 17 has a substrate holding and rotating mechanism having a spin base rotatable around a predetermined rotation axis and rotating around the rotation axis while holding the substrate. It is provided so as to surround the periphery of the substrate holding and rotating mechanism, and is a cup for storing the processing liquid discharged from the substrate rotated by the substrate holding and rotating mechanism, and a wall surface of an outer peripheral portion of the spin base. A method of processing a substrate using a substrate processing apparatus including a cleaning solution nozzle for supplying a cleaning solution to a base wall surface, the first chemical solution supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism. After the supplying step and the first chemical solution supplying step, a second chemical solution different in type from the first chemical solution is supplied to the substrate rotated by the substrate holding and rotating mechanism. A rinse liquid is supplied to the substrate rotated by the substrate holding and rotating mechanism prior to the start of the second chemical liquid supply process after the completion of the chemical liquid supply process and the first chemical liquid supply process, to the surface of the substrate The cleaning solution is discharged from the cleaning solution nozzle in parallel with the rinse step of washing out the adhering first chemical solution and the rinse step, and / or prior to the start of the second chemical solution supply step after the rinse step is completed. And providing a cleaning liquid supply process to the base wall surface.
According to this method, the same effects as the effects described in relation to claim 7 are exerted.
According to the eighteenth aspect of the present invention, in the cleaning liquid supplying step, the cleaning liquid is discharged from the cleaning liquid nozzle in parallel with the second chemical liquid supplying step and / or after completion of the second chemical liquid supplying step. It is a substrate processing method according to any one of claims 12 to 17 including a cleaning liquid supply process.
According to this method, it exhibits the advantageous operation and effect as those described in connection with claim 8.

  The invention as set forth in claim 19 is characterized in that the substrate processing method includes a spin dry step of spinning off the liquid component on the surface of the substrate by rotating the substrate by the substrate holding and rotating mechanism after completion of the second chemical solution supplying step. 19. The cleaning solution supply process according to any one of claims 12 to 18, further comprising: a third cleaning solution supply process of discharging a cleaning solution from the cleaning solution nozzle in parallel with the spin dry process and / or after the spin dry process. It is a substrate processing method given in one paragraph.

According to this method, the same effect as the effect described in relation to claim 9 is exerted.
The invention according to claim 20 is characterized in that the cup includes a plurality of cups provided so as not to overlap in a plan view, and the cleaning liquid supply step is provided at the innermost one of the plurality of cups. The substrate processing method according to any one of claims 12 to 19, wherein the cup is cleaned.

  According to this method, the cleaning liquid is supplied to the innermost first cup in the cleaning liquid supply process. Since the first cup is provided closest to the substrate holding and rotating mechanism, the first or second chemical solution enters the first cup at the time of processing with the first chemical solution or the second chemical solution, and the first cup is Adhere to the inner wall of 1 cup. As described above, since the inner wall of the first cup to which the first or second chemical solution easily adheres can be cleaned, the mixing of the first chemical solution and the second chemical solution can be more reliably prevented.

In the invention according to claim 21, the substrate processing apparatus is connected to the common pipe connected to the drainage / recovery port formed at the bottom of the cup, and the common pipe, and the first chemical solution or the first liquid chemical (2) The recovery piping for recovery of the chemical solution and the drainage piping connected to the common piping, and the cleaning liquid supply process is executed in a state where the circulation destination of the liquid passing through the common piping is set to the drainage piping to a substrate processing method according to any one of claims 1 3-20.

According to this method, the same effects as the effects described in relation to claim 10 can be obtained.

It is the figure which looked at the substrate processing apparatus which concerns on one Embodiment of this invention horizontally. It is a sectional view for explaining the 1st and 2nd cleaning nozzle. It is a sectional view for explaining the 1st and 2nd cleaning nozzle. It is the figure seen from the cutting plane line IV-IV of FIG. FIG. 5 is a cross-sectional view of the boss taken along the line VV of FIG. 4; It is process drawing for demonstrating an example of a process of the board | substrate performed by the said substrate processing apparatus. It is a schematic diagram which shows an example of the said process. It is a schematic diagram which shows an example of the said process. It is a schematic diagram which shows an example of the said process. It is a schematic diagram which shows an example of the said process.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.
FIG. 1 is a horizontal view of a substrate processing apparatus 1 according to an embodiment of the present invention. 2 and 3 are cross-sectional views for explaining the first and second cleaning nozzles 76, 78. As shown in FIG. FIG. 2 shows a state in which the first guard 44 is opposed to the peripheral end face of the substrate W, and FIG. 3 shows a state in which the fourth guard 47 is opposed to the peripheral end face of the substrate W. FIG. 4 is a view from the section line IV-IV of FIG. 5 is a cross-sectional view of the boss 21 taken along the cutting plane line VV of FIG.

The substrate processing apparatus 1 is a sheet-fed apparatus for performing liquid processing such as cleaning processing and etching processing on the surface of the substrate W such as a circular semiconductor wafer on the device formation region side. The substrate processing apparatus 1 holds a box-shaped processing chamber 2 having an internal space and a single substrate W in the processing chamber 2 in a horizontal posture, and extends around a vertical rotation axis A1 passing through the center of the substrate W. A mixed solution of sulfuric acid and hydrogen peroxide (sulfuric acid / one example of a sulfuric acid-containing liquid as a first chemical solution is applied to the spin chuck (substrate holding and rotating mechanism) 3 for rotating the substrate W and the substrate W held by the spin chuck 3. A sulfuric acid-containing liquid supply unit (first chemical solution supply means) 4 for supplying hydrogen peroxide mixture (SPM), and an organic solvent as a second chemical solution on the surface (upper surface) of the substrate W held by the spin chuck 3 An organic solvent supply unit (second chemical solution supply means) 5 for supplying an isopropyl alcohol (IPA) solution as an example (an organic solvent having a low surface tension) and a spin chuck 3 A rinse solution supply unit (a rinse solution supply means) 6 for supplying DIW (deionized water) as an example of a rinse solution to the surface (upper surface) of the substrate W being carried It includes a processing cup 7 and a control device 8 that controls the operation of the device provided in the substrate processing apparatus 1 and the opening and closing of a valve.

  The processing chamber 2 includes a box-like partition 10, an FFU (fan filter unit) 11 as a blower unit for supplying clean air from inside the partition 10 (corresponding to the inside of the processing chamber 2) from the top of the partition 10, and the partition 10 And an exhaust unit (not shown) for exhausting the gas in the processing chamber 2 from the bottom of the The spin chuck 3, the sulfuric acid-containing liquid nozzle 27 of the sulfuric acid-containing liquid supply unit 4, the organic solvent nozzle 33 of the organic solvent supply unit 5, and the rinse liquid nozzle 39 of the rinse liquid supply unit 6 are accommodated in the partition 10. .

  The FFU 11 is disposed above the partition 10 and attached to the ceiling of the partition 10. The FFU 11 sends clean air into the processing chamber 2 from the ceiling of the bulkhead 10. The exhaust unit is connected to the bottom of the processing cup 7 via the in-cup exhaust duct 49 and sucks the inside of the processing cup 7 from the bottom of the processing cup 7. A downflow (downflow) is formed in the processing chamber 2 by the FFU 11 and the exhaust system.

  As the spin chuck 3, a holding type chuck is adopted which holds the substrate W horizontally by holding the substrate W in the horizontal direction. Specifically, the spin chuck 3 includes a spin motor 13, a spin shaft 14 integrated with a drive shaft of the spin motor 13, and a disk-shaped spin base substantially horizontally attached to an upper end of the spin shaft 14. And a cover member 17 that covers the spin motor 13 and the spin axis 14 and that constitutes the side surface of the spin chuck excluding the spin base 15.

  The spin shaft 14 is a hollow shaft vertically disposed, and a lower surface supply pipe (not shown) is inserted therein. A processing liquid (for example, a first chemical solution, a second chemical solution, or pure water (DIW)) is supplied to the lower surface supply pipe. Further, a lower surface nozzle 18 for discharging the processing liquid supplied to the lower surface supply piping is formed at the upper end portion of the lower surface supply piping. The lower surface nozzle 18 discharges the processing liquid substantially vertically upward, and the processing liquid discharged from the lower surface nozzle 18 is incident substantially perpendicularly to the lower surface center of the substrate W held by the spin chuck 3.

The spin motor 13 is disposed on a horizontally extending bottom plate 19 and is surrounded by a cylindrical cover member 17. The lower end of the cover member 17 is placed on the bottom plate 19 of the partition 10, and the upper end reaches the vicinity of the spin base 15.
As shown in FIGS. 1 and 4, a plurality of (three or more, for example, six) clamping members 16 are disposed on the peripheral surface of the top surface of the spin base 15. The plurality of holding members 16 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W in the upper surface peripheral portion of the spin base 15. Note that FIG. 4 shows the spin chuck 3 without holding the substrate W.

  As shown in FIG. 1, the cover member 17 is configured by combining a cylindrical base boss 20, a cylindrical boss 21 and an annular plate-shaped boss cover 22 in order from the bottom. The base boss 20 and the boss 21 and the boss 21 and the boss cover 22 are fixed to each other using bolts (not shown). The base boss 20 is placed on the bottom plate 19 and arranged to surround the spin motor 13. The boss cover 22 is arranged to fill the gap between the spin base 15 and the boss 21.

As shown in FIG. 5, the boss 21 has a lower portion 23 having the first cylindrical surface 23A as an outer peripheral surface, a middle step 24 having an upwardly convex conical tapered surface 24A as an outer peripheral surface, and a second cylinder. It integrally includes an upper portion 25 having a surface 25A as an outer peripheral surface, and is formed using a resin material such as PVC (vinyl chloride).
As shown in FIG. 1, the sulfuric acid-containing liquid supply unit 4 includes a sulfuric acid-containing liquid nozzle 27 for discharging the SPM toward the surface of the substrate W, and a first nozzle arm having the sulfuric acid-containing liquid nozzle 27 attached to its tip. 28, a first arm support shaft 29 extending in the vertical direction on the side of the spin chuck 3 and pivotally supporting the first nozzle arm 28, and a rotation of the first arm support shaft 29. And a first arm swing unit 30 for moving the sulfuric acid-containing liquid nozzle 27 by moving the nozzle arm 28 of the first embodiment. The sulfuric acid-containing liquid nozzle 27 is, for example, a straight nozzle that discharges the SPM in a continuous flow state, and is attached to a horizontally extending first nozzle arm 28 with its discharge port directed downward, for example. . The first nozzle arm 28 extends in the horizontal direction.

  The sulfuric acid-containing liquid supply unit 4 includes a sulfuric acid-containing liquid pipe 31 for guiding the SPM to the sulfuric acid-containing liquid nozzle 27 and a sulfuric acid-containing liquid valve 32 for opening and closing the sulfuric acid-containing liquid pipe 31. When the sulfuric acid containing liquid valve 32 is opened, the SPM from the SPM supply source is supplied from the sulfuric acid containing liquid piping 31 to the sulfuric acid containing liquid nozzle 27. Thus, the SPM is discharged from the sulfuric acid-containing liquid nozzle 27.

  The first arm swinging unit 30 moves the sulfuric acid-containing liquid nozzle 27 horizontally by rotating the first nozzle arm 28 around the first arm support shaft 29. In the first arm swing unit 30, the processing position at which the SPM discharged from the sulfuric acid-containing liquid nozzle 27 lands on the upper surface of the substrate W and the sulfuric acid-containing liquid nozzle 27 are set around the spin chuck 3 in plan view. The sulfuric acid-containing liquid nozzle 27 is moved horizontally between the two home positions. Furthermore, in the first arm swinging unit 30, the central position where the SPM discharged from the sulfuric acid-containing liquid nozzle 27 lands on the central portion of the upper surface of the substrate W, and the SPM discharged from the sulfuric acid-containing liquid nozzle 27 The sulfuric acid-containing liquid nozzle 27 is moved horizontally between the peripheral position where the liquid adheres to the upper peripheral part of the head. The central position and the peripheral position are both processing positions. The sulfuric acid-containing liquid nozzle 27 may be a fixed nozzle in which the discharge port is fixedly disposed toward a predetermined position (for example, the central portion) of the upper surface of the substrate W.

  The organic solvent supply unit 5 has an organic solvent nozzle 33 discharging IPA toward the surface of the substrate W, a second nozzle arm 34 with the organic solvent nozzle 33 attached to the tip, and a side of the spin chuck 3. By moving the second nozzle arm 34 by rotating the second arm support shaft 35 and the second arm support shaft 35, which extend vertically and pivotally support the second nozzle arm 34. And a second arm swing unit 36 for moving the organic solvent nozzle 33. The organic solvent nozzle 33 is, for example, a straight nozzle that discharges IPA in a continuous flow state, and is attached to a horizontally extending second nozzle arm 34 with its discharge port directed downward, for example. The second nozzle arm 34 extends in the horizontal direction.

The organic solvent supply unit 5 includes an organic solvent pipe 37 for guiding IPA to the organic solvent nozzle 33 and an organic solvent valve 38 for opening and closing the organic solvent pipe 37. When the organic solvent valve 38 is opened, IPA from the IPA supply source is supplied from the organic solvent pipe 37 to the organic solvent nozzle 33. Thereby, IPA is discharged from the organic solvent nozzle 33.
The second arm swinging unit 36 horizontally moves the organic solvent nozzle 33 by rotating the second nozzle arm 34 around the second arm support shaft 35. The second arm swing unit 36 has a processing position at which IPA discharged from the organic solvent nozzle 33 lands on the upper surface of the substrate W, and a home where the organic solvent nozzle 33 is set around the spin chuck 3 in plan view. The organic solvent nozzle 33 is moved horizontally between the positions. Furthermore, in the second arm swing unit 36, the central position at which IPA discharged from the organic solvent nozzle 33 lands on the center of the upper surface of the substrate W, and the upper surface of the substrate W from IPA discharged from the organic solvent nozzle 33. The organic solvent nozzle 33 is moved horizontally between the peripheral position where the liquid adheres to the peripheral portion. The central position and the peripheral position are both processing positions. The organic solvent nozzle 33 may be a fixed nozzle in which the discharge port is fixedly disposed toward a predetermined position (for example, the central portion) of the upper surface of the substrate W.

  The rinse liquid supply unit 6 discharges the rinse liquid toward the substrate W held by the spin chuck 3, the rinse liquid pipe 40 for supplying the rinse liquid to the rinse liquid nozzle 39, and the rinse liquid pipe 40 includes a rinse liquid valve 41 that switches supply of the rinse liquid to the rinse liquid nozzle 39 and supply stop of the rinse liquid. The rinse liquid nozzle 39 is a fixed nozzle that discharges the rinse liquid in a state where the discharge port of the rinse liquid nozzle 39 is stationary. The rinse liquid supply unit 6 may include a rinse liquid nozzle moving device that moves the liquid contact position of the rinse liquid relative to the top surface of the substrate W by moving the rinse liquid nozzle 39.

  When the rinse liquid valve 41 is opened, the rinse liquid supplied from the rinse liquid piping 40 to the rinse liquid nozzle 39 is discharged from the rinse liquid nozzle 39 toward the central portion of the upper surface of the substrate W. The rinse solution is, for example, pure water (deionized water). The rinse solution is not limited to pure water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water of dilute concentration (for example, about 10 to 100 ppm).

  The processing cup 7 includes a cylindrical member 50 surrounding the spin chuck 3 and a plurality of cups 42 and 43 (first and second cups 42 and 43) fixedly disposed between the spin chuck 3 and the cylindrical member 50. And a plurality of guards 44 to 47 (first to fourth guards 44 to 47) for receiving the processing liquid (chemical solution and rinse liquid) scattered around the substrate W, and the individual guards 44 to 47 independently. And a guard lifting unit 48 for lifting and lowering. By driving the guard lifting and lowering unit 48, the individual guards 44 to 47 are lifted and lowered independently. The guard lifting unit 48 is configured to include, for example, a ball screw mechanism.

  The cylindrical member 50 surrounds the spin chuck 3. The cylindrical member 50 is configured to be able to store the treatment liquid therein. The treatment liquid stored in the cylindrical member 50 is led to a drainage unit (not shown). Further, the upstream end of the in-cup exhaust duct 49 is connected to a predetermined place in the circumferential direction at the lower end portion of the cylindrical member 50. The downstream end of the in-cup exhaust duct 49 is connected to an outboard exhaust unit (not shown). The atmosphere in the cylindrical member 50 is exhausted by the exhaust unit (not shown) through the in-cup exhaust duct 49. A third cup 74 is disposed on the inner periphery of the cylindrical member 50 so as to surround the first to fourth guards 44 to 47. The third cup 74 is U-shaped in cross section, and defines a drainage groove 75 for collecting and draining the processing solution used for processing the substrate W. The treatment liquid collected in the drainage groove 75 is led to a drainage unit (not shown).

The processing cup 7 is foldable, and the guard lifting and lowering unit 48 raises and lowers at least one of the four guards 44 to 47 to open and fold the processing cup 7.
The first cup 42 has an annular shape, and surrounds the spin chuck 3 between the spin chuck 3 and the cylindrical member 50. The first cup 42 has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W. The first cup 42 has an annular bottom 51 (see FIGS. 2 and 3) in plan view, a cylindrical inner wall 52 (see FIG. 2 etc.) rising upward from the inner peripheral edge of the bottom 51, and the bottom A cylindrical outer wall portion 53 (see FIG. 2 and the like) rising upward from the outer peripheral edge portion 51 is integrally provided. The bottom 51, the inner wall 52, and the outer wall 53 have a U-shaped cross section, and the bottom 51, the inner wall 52, and the outer wall 53 collect the treatment liquid used for processing the substrate W, or A first drainage / recovery groove 54 (see FIG. 2 etc.) for draining is partitioned. A first drainage / recovery port 92 (see FIG. 4) is opened at the lowest position of the bottom of the first drainage / recovery groove 54, and the first drainage / recovery port 92 is The first common pipe 93 is connected. A first recovery pipe 95 and a first drainage pipe 96 are branch-connected to the first common pipe 93, respectively. A first recovery valve 95A is interposed in the first recovery pipe 95, and a first drain valve 96A is interposed in the first drainage pipe 96. By opening the first recovery valve 95A while closing the first drainage valve 96A, the liquid passing through the first common piping 93 is guided to the first recovery pipe 95 (recovery port (see FIG. 7A etc.)). . In addition, by opening the first drainage valve 96A while closing the first recovery valve 95A, the liquid passing through the first common piping 93 is the first drainage pipe 96 (a drainage port (see FIG. 7A, etc.)). Led to). That is, the first recovery valve 95A and the first drain valve 96A are configured to communicate the fluid passing through the first common pipe 93 between the first recovery pipe 95 and the first drain pipe 96. It functions as a switching valve to switch.

  The end of the first recovery pipe 95 extends to a recovery processing unit (not shown), and the end of the first drainage pipe 96 extends to a drainage unit (not shown). The liquid flowing through the first common pipe 93 is switched by switching the circulation destination by the switching valves 95A and 96A, and the liquid flowing through the first common pipe 93 is switched by the switching of the first switching valve 94 by a first recovery. It is selectively led to the pipe 95 and the first drainage pipe 96. Thus, the processing liquid discharged from the substrate W is recovered or drained.

  The second cup 43 has an annular shape, and surrounds the spin chuck 3 between the first cup 42 and the cylindrical member 50. The second cup 43 has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W. The second cup 43 has a U-shaped cross section and defines a second drainage / recovery groove 55 (see FIG. 2 etc.) for collecting and recovering the processing liquid used for processing the substrate W. doing. A second drainage / recovery port 97 is opened at the lowest position of the bottom of the second drainage / recovery groove 55, and a second common piping is provided in the second drainage / recovery port 97. 98 is connected. The second recovery pipe 100 and the second drainage pipe 101 are branched and connected to the second common pipe 98, respectively. A second recovery valve 100A is interposed in the second recovery pipe 100, and a second drain valve 101A is interposed in the second drainage pipe 101. By opening the second recovery valve 100A while closing the second drainage valve 101A, the liquid passing through the second common piping 98 is guided to the second recovery piping 100. Further, the liquid passing through the second common pipe 98 is guided to the second liquid discharge pipe 101 by opening the second liquid discharge valve 101A while closing the second recovery valve 100A. That is, the second recovery valve 100A and the second drain valve 101A are configured to communicate the fluid passing through the second common pipe 98 between the second recovery pipe 100 and the second drain pipe 101. It functions as a switching valve to switch. The tip of the second recovery pipe 100 extends to a recovery processing unit (not shown), and the tip of the second drainage pipe 101 extends to a drain unit (not shown). By switching the distribution destination by the switching valves 100A and 101A, the liquid flowing through the second common pipe 98 is selectively led to the second recovery pipe 100 and the second drainage pipe 101.

  The third drainage / recovery port 102 is opened at the lowest position of the bottom of the third drainage / recovery groove 66, and the third drainage / recovery port 102 is provided with a third common piping. 103 are connected. The third recovery pipe 105 and the third drainage pipe 106 are branched and connected to the third common pipe 103, respectively. A third recovery valve 105A is interposed in the third recovery pipe 105, and a third drain valve 106A is interposed in the third drainage pipe 106. By opening the third recovery valve 105A while closing the third drainage valve 106A, the liquid passing through the third common piping 103 is guided to the third recovery pipe 105. Further, the liquid passing through the third common pipe 103 is guided to the third liquid discharge pipe 106 by opening the third liquid discharge valve 106A while closing the third recovery valve 105A. That is, the third recovery valve 105A and the third drainage valve 106A are configured to communicate the fluid passing through the third common piping 103 between the third recovery piping 105 and the third drainage piping 106. It functions as a switching valve to switch. The tip of the third recovery pipe 105 extends to a recovery processing unit (not shown), and the tip of the third drainage pipe 106 extends to a drainage unit (not shown). By switching the distribution destination by the switching valves 105A and 106A, the liquid flowing through the third common pipe 103 is selectively led to the third recovery pipe 105 and the third drainage pipe 106.

  The innermost first guard 44 surrounds the spin chuck 3 and has a substantially rotationally symmetrical shape with respect to the rotation axis A 1 of the substrate W by the spin chuck 3. The first guard 44 integrally includes a cylindrical guide portion 56 surrounding the periphery of the spin chuck 3 and a cylindrical processing liquid separation wall 57 connected to the guide portion 56. The guide portion 56 has a cylindrical lower end portion 58 (see FIG. 2 etc.) surrounding the spin chuck 3 and a cylindrical shape extending outward from the upper end of the lower end portion 58 (a direction away from the rotation axis A1 of the substrate W). A thick portion 59 (see FIG. 2 etc.), a cylindrical middle step 60 (see FIG. 2 etc.) extending vertically upward from the upper surface outer peripheral portion of the thick portion 59, and an inner side from the upper end of the middle step 60 (substrate W And an annular upper end portion 61 (see FIG. 2 and the like) extending obliquely upward in the direction approaching the rotation axis A1).

  The treatment liquid separation wall 57 extends vertically downward from the outer peripheral portion of the thick portion 59 by a very small amount, and is located on the second drainage / recovery groove 55 (see FIG. 2 etc.). Further, the lower end portion 58 of the guide portion 56 is located on the first drainage / recovery groove 54 (see FIG. 2 etc.), and in a state where the first guard 44 and the first cup 42 are closest to each other. It is accommodated inside the first drainage / recovery groove 54. The inner peripheral end of the upper end portion 61 has a circular shape larger in diameter than the substrate W held by the spin chuck 3 in a plan view. The upper end portion 61 may have a linear cross-sectional shape as shown in FIG. 1 or the like, or may extend while drawing a smooth circular arc, for example.

The second second guard 45 from the inside has a substantially rotationally symmetric shape with respect to the rotation axis A1 of the substrate W outside the first guard 44. The second guard 45 integrally includes a guide portion 62 and a cup portion 63 provided on the outer side of the guide portion 62.
The guide portion 62 is provided outside the middle step portion 60 of the first guard 44 with a cylindrical portion 64 (see FIG. 2 and the like) coaxial with the middle step portion 60 (see FIG. 2 etc.) And an upper end portion 65 (see FIG. 2 etc.) extending obliquely upward in the direction approaching the rotation axis A1). The cylindrical portion 64 is located on the second drainage / recovery groove 55, and in the second drainage / recovery groove 55 with the second guard 45 and the second cup 43 being closest to each other. Be housed. The inner peripheral end of the upper end portion 65 has a circular shape larger in diameter than the substrate W held by the spin chuck 3 in a plan view. The upper end portion 65 may have a linear cross-sectional shape as shown in FIG. 1 or the like, or may extend while drawing a smooth circular arc, for example.

  The cup portion 63 is connected to the outer peripheral portion of the upper end portion 59 of the guide portion 62. The cup portion 63 is disposed between the second cup 43 and the cylindrical member 50 in a plan view. The cup portion 63 has a substantially rotationally symmetric shape with respect to the rotation axis A1 of the substrate W. The cup portion 63 has a U-shaped cross section, and defines a third drainage / recovery groove 66 (see FIG. 2 etc.) for collecting and recovering the processing liquid used for processing the substrate W. There is. The processing solution collected in the third drainage / recovery groove 66 is sent to a recovery processing unit (not shown) or a drainage unit (not shown).

  The third third guard 46 from the inner side is formed in a substantially rotationally symmetric shape with respect to the rotation axis A1 of the substrate W by the spin chuck 3. The third guard 46 surrounds the spin chuck 3. The third guard 46 has a cylindrical lower end 68 (see FIG. 2 and the like) surrounding the second guard 45 and an annular upper end extending obliquely upward from the upper end of the lower end 68. 69 (see FIG. 2 and the like), a hanging portion 70 (see FIG. 2 and the like) extending vertically downward from a position near the outer periphery of the upper end 69, and projecting outward from a middle portion of the lower end 68 It integrally comprises a downwardly extending overhang portion 71 (see FIG. 2 and the like). The hanging portion 70 is located on the third drainage / recovery groove 66, and is accommodated in the third drainage / recovery groove 66 with the second guard 45 and the third guard 46 closest to each other. Ru. The overhang portion 71 is positioned on the drainage groove 75, and is accommodated in the drainage groove 75 with the third guard 46 positioned at the lower position. The inner peripheral end of the upper end portion 69 has a circular shape larger in diameter than the substrate W held by the spin chuck 3 in plan view. The upper end portion 69 may have a linear cross-sectional shape as shown in FIG. 1 or the like, or may extend while drawing a smooth circular arc, for example.

  The outermost fourth guard 47 surrounds the spin chuck 3 on the outer side of the third guard 46 and has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W by the spin chuck 3 . The fourth guard 47 has a cylindrical portion 72 coaxial with the third guard 46, and an upper end portion 73 extending obliquely upward from the upper end of the cylindrical portion 72 toward the center side (direction approaching the rotation axis A1 of the substrate W). ing. The cylindrical portion 72 is located on the overhang portion 71 of the third guard 46. The inner peripheral end of the upper end portion 73 has a circular shape larger in diameter than the substrate W held by the spin chuck 3 in a plan view. The upper end portion 73 may have a linear cross-sectional shape as shown in FIG. 1 or the like, or may extend while drawing a smooth circular arc, for example.

  As shown in FIG. 1, in the guard lifting unit 48, each guard is between the upper position where the upper end of the guard is located above the substrate W and the lower position where the upper end of the guard is located below the substrate W. Move up and down 44-47. The guard lifting and lowering unit 48 can hold each of the guards 44 to 47 at any position between the upper position and the lower position. Supply of the processing liquid to the substrate W and drying of the substrate W are performed in a state where any one of the guards 44 to 47 is opposed to the peripheral end surface of the substrate W.

  When the innermost first guard 44 is made to face the circumferential end surface of the substrate W, as shown in FIG. 2, all of the first to fourth guards 44 to 47 are disposed at the upper position. In this state, the lower end of the lower end portion 58 of the first guard 44 is disposed to coincide with the upper end of the first drainage / recovery groove 54, that is, the lower end portion 58 of the first guard 44. Only the tip portion is in the first drainage / recovery groove 54.

When the second second guard 45 from the inner side is made to face the circumferential end surface of the substrate W, the second to fourth guards 45 to 47 are arranged at the upper position (the position shown in FIG. 2) Guard 44 is disposed at the lower position (the position shown in FIG. 3).
When the third third guard 46 from the inner side is made to face the circumferential end surface of the substrate W, the third and fourth guards 46 and 47 are disposed at the upper position (the position shown in FIG. 2) And the second guards 44 and 45 are disposed at the lower position (the position shown in FIG. 3).

In the case where the outermost fourth guard 47 is made to face the circumferential end surface of the substrate W, as shown in FIG. 3, the fourth guard 47 is disposed at the upper position, and the first to third guards 44 46 is placed at the lower position.
The substrate processing apparatus 1 supplies a cleaning solution to the first cleaning solution nozzle 76 for discharging the cleaning solution to the peripheral end surface and the bottom surface (base wall surface) of the outer peripheral portion 15A of the spin base 15 and the first cleaning solution nozzle 76. A first cleaning liquid supply unit 77, a second cleaning liquid nozzle 78 for supplying the cleaning liquid to the inner wall (inner wall of the cup) of the first cup 42, and a second for supplying the cleaning liquid to the second cleaning liquid nozzle 78 And the cleaning solution supply unit 79 of FIG. A plurality of first and second cleaning solution nozzles 76 and 78 are provided (for example, two first cleaning solution nozzles 76 and four second cleaning solution nozzles 78).

The cleaning solution is, for example, pure water (deionized water). The cleaning liquid is not limited to pure water, and a cleaning chemical (for example, SC1 (a mixed solution containing NH ₄ OH and H ₂ O ₂ )) can also be used.
Each first cleaning solution nozzle 76 has one first cleaning solution discharge port 80 (see FIG. 5) disposed opposite to the peripheral end surface and the bottom surface of the outer peripheral portion 15A. As shown in FIG. 5, each first cleaning solution outlet 80 is directed radially inward and obliquely upward of the spin base 15. The two first cleaning solution outlets 80 are disposed on the upper side of the tapered surface 24A of the boss 21, that is, on the lower side of the outer peripheral portion 15A of the spin base 15. Further, the two first cleaning solution outlets 80 are disposed at the same height each other, and more specifically, as shown in FIG. 4, sandwiching the center (rotational axis A1) of the spin base 15 It is arranged as.

  Each second cleaning solution nozzle 78 has one second cleaning solution outlet 81 (see FIG. 5). As shown in FIG. 5, the four second cleaning solution outlets 81 are arranged at the same height position on the upper side of the tapered surface 24A of the boss 21. Each second cleaning solution outlet 81 is directed radially outward and obliquely downward of the spin base 15. As shown in FIG. 4, four second cleaning solution outlets 81 are arranged at predetermined intervals in the circumferential direction of the spin base 15, and the first drainage / recovery port 92 and the spin base 15 in plan view. Are arranged in line symmetry with an imaginary straight line A2 connecting the center (rotational axis A1) of Further, the second cleaning solution nozzle 78 is not disposed in the area close to the first drainage / recovery port 92 in the circumferential direction of the boss 21.

  As shown in FIG. 5, the first cleaning liquid supply unit 77 includes a first cleaning liquid flow passage 82 formed inside the boss 21 and a first cleaning liquid supply passage 82 for supplying the cleaning liquid to the first cleaning liquid flow passage 82. A cleaning solution supply pipe 83 and a first cleaning solution valve 84 for opening and closing the first cleaning solution supply pipe 83 are included. The first cleaning solution flow passage 82 includes a first common flow passage 85 (refer to FIG. 4 together) having a rectangular cross-section extending in a half circumference, a first common flow passage 85 and individual first cleaning solution discharges. And a plurality of first branch flow passages 86 connecting the outlet 80. Each first branch flow passage 86 extends vertically upward from the first common flow passage 85, and then bends obliquely upward and opens at the tapered surface 24A of the boss 21 to form a first cleaning solution discharge port 80. doing.

  As shown in FIG. 5, the second cleaning liquid supply unit 79 includes a second cleaning liquid flow path 87 formed inside the boss 21 and a second cleaning liquid supply path 87 for supplying a cleaning liquid to the second cleaning liquid flow path 87. A cleaning solution supply pipe 88 and a second cleaning solution valve 89 for opening and closing the second cleaning solution supply pipe 88 are included. The second cleaning fluid flow passage 87 includes a second common flow passage 90 (refer to FIG. 4 together) having a rectangular cross-sectional shape extending in an arc shape concentric with the same diameter and having the same shape as the first common flow passage 85; And a plurality of second branch flow passages 91 connecting the common flow passages 90 and the individual second cleaning solution outlets 81. The second common flow passage 90 is provided at the same height as the first common flow passage 85 and does not overlap the first common flow passage 85 in the circumferential direction of the spin base 15. Each second branch flow passage 91 extends vertically upward, and then bends obliquely downward and opens in the tapered surface 24A of the boss 21 to form a second cleaning solution discharge port 81.

FIG. 6 is a process diagram for explaining an example of the resist removal process of the substrate W performed by the substrate processing apparatus 1. 7A to 7D are schematic views showing an example of the resist removal process.
Hereinafter, an example of the resist removing process will be described with reference to FIGS. 1 and 6. 2 to 5 and 7A to 7D will be referred to as appropriate.

  When resist removal processing is performed on the substrate W by the substrate processing apparatus 1, the substrate W after ion implantation processing at a high dose is carried into the processing chamber 2 (step S1). It is assumed that the substrate W to be carried in has not been subjected to the process for ashing the resist. Further, on the surface of the substrate W, a fine pattern having a high aspect ratio is formed. Specifically, in the control device 8, all the nozzles and the like are retracted from above the spin chuck 3, and the first to fourth guards 44 to 47 are lowered to the lower position (the lowermost position). The hand (not shown) of a substrate transfer robot (not shown) holding the substrate W in a state where the upper ends of the four guards 44 to 47 are all positioned lower than the holding position of the substrate W by the spin chuck 3 The substrate W is transferred to the spin chuck 3 with its surface directed upward by advancing the inside of the processing chamber 2).

Thereafter, the control device 8 controls the guard lifting and lowering unit 48 to raise all the first to fourth guards 44 to 47 to the upper position (uppermost position), Make it face the peripheral end face.
Then, the control device 8 causes the spin motor 13 to start the rotation of the substrate W (step S2). The substrate W is raised to a predetermined sulfuric acid-containing liquid processing speed (for example, about 300 rpm within the range of 100 to 500 rpm) and maintained at the sulfuric acid-containing liquid processing speed. Further, the control device 8 controls the first recovery valve 95A and the first drainage valve 96A to set the circulation destination of the liquid passing through the first common pipe 93 as the first recovery pipe 95.

  When the rotational speed of the substrate W reaches the sulfuric acid-containing liquid processing speed, the control device 8 next performs a sulfuric acid-containing liquid supply process (first chemical liquid supply process; step S3) for supplying SPM to the substrate W. Specifically, the control device 8 moves the sulfuric acid-containing liquid nozzle 27 from the home position to the processing position by controlling the first arm swing unit 30. Thereby, the sulfuric acid-containing liquid nozzle 27 is disposed above the substrate W.

  After the sulfuric acid-containing liquid nozzle 27 is disposed above the substrate W, the controller 8 discharges the SPM from the discharge port of the sulfuric acid-containing liquid nozzle 27 as shown in FIG. 7A by opening the sulfuric acid-containing liquid valve 32. Liquid is deposited on the upper surface of the substrate W. The control device 8 controls the first arm swing unit 30 to move the landing position of the SPM with respect to the upper surface of the substrate W between the central portion and the peripheral portion in this state.

  The SPM discharged from the sulfuric acid-containing liquid nozzle 27 lands on the upper surface of the substrate W rotating at a sulfuric acid-containing liquid processing speed (for example, 300 rpm), receives centrifugal force, and moves outward along the upper surface of the substrate W Flow to Therefore, SPM is supplied to the entire upper surface of the substrate W, and a liquid film of SPM covering the entire upper surface of the substrate W is formed on the substrate W. The chemical reaction between the resist and the SPM removes the resist on the substrate W from the substrate W by the SPM. Furthermore, since the control device 8 moves the landing position of the SPM with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the landing position of the SPM is the substrate W The entire top surface of the substrate W is scanned while passing through the entire top surface of the substrate W. Therefore, the SPM discharged from the sulfuric acid-containing liquid nozzle 27 is supplied to the entire upper surface of the substrate W, and the entire upper surface of the substrate W is uniformly processed. The SPM supplied to the upper surface of the substrate W scatters from the peripheral portion of the substrate W toward the side of the substrate W.

  The SPM scattered from the peripheral portion of the substrate W is received by the inner wall of the first guard 44. The chemical solution flowing down along the inner wall of the first guard 44 is received by the first cup 42, collected at the bottom of the first cup 42, and guided to the first common pipe 93. At this time, the circulation destination of the fluid passing through the first shared pipe 93 is set to the first recovery pipe 95 by the first recovery valve 95A and the first drain valve 96A, and therefore, the first shared pipe The SPM led to 93 is led to the recovery processing unit (not shown) through the first recovery pipe 95. After the sulfuric acid-containing liquid supply step (S3), SPM adheres to the inner wall of the first cup 42, the peripheral end face and the bottom of the outer peripheral portion 15A, and the pipe wall of the first common pipe 93.

When a predetermined time period has elapsed from the start of the SPM discharge, the controller 8 closes the sulfuric acid-containing liquid valve 32 to stop the SPM discharge. Further, the sulfuric acid-containing liquid nozzle 27 is moved from the processing position to the home position by controlling the first arm swing unit 30.
After the completion of the sulfuric acid-containing liquid supply step (S3), the rinse step (step S4) of supplying the rinse liquid to the substrate W is performed with the first guard 44 facing the peripheral end face of the substrate W. . Specifically, the control device 8 controls the first recovery valve 95A and the first drain valve 96A so that the flow destination of the liquid passing through the first common pipe 93 can be set to the first drain pipe 96. Switch. Further, the control device 8 opens the rinse liquid valve 41 and discharges the rinse liquid from the rinse liquid nozzle 39 toward the central portion of the upper surface of the substrate W, as shown in FIG. 7B.

  The rinse liquid discharged from the rinse liquid nozzle 39 deposits on the central portion of the upper surface of the substrate W covered by the liquid film of SPM, receives centrifugal force due to the rotation of the substrate W, and the substrate W on the upper surface of the substrate W Flow towards the rim of the As a result, the IPA on the substrate W is flushed outward by the rinse liquid and discharged around the substrate W. Therefore, the liquid film of the SPM on the substrate W is replaced with the liquid film of the rinse liquid covering the entire upper surface of the substrate W. Thereby, the SPM is washed away over the entire top surface of the substrate W. The rinse liquid supplied to the upper surface of the substrate W is scattered from the peripheral portion of the substrate W toward the side of the substrate W.

  The rinse liquid scattering from the peripheral portion of the substrate W is received by the inner wall of the first guard 44. The rinse liquid flowing down along the inner wall of the first guard 44 drops from the lower end of the lower end portion 58 and is received by the first cup 42. The cleaning liquid supplied to the first cup 42 moves in the first cup 42 toward the first drainage / recovery port 92 in the circumferential direction of the first cup 42, and the first drainage is performed. And lead from the recovery port 92 to the first common pipe 93. Since the flow destination of the liquid passing through the first common piping 93 is set to the first drain piping 96, the rinse liquid led to the first common piping 93 is drained through the first drainage piping 96. It is led to a fluid unit (not shown).

  Further, as shown in FIG. 2 and FIG. 7B in parallel with the rinse step (S4), the control device 8 opens the first cleaning solution valve 84 and the second cleaning solution valve 89, thereby the first cleaning solution nozzle The cleaning solution is discharged from each of the first cleaning solution discharge port 80 (see FIG. 5) of 76 and the second cleaning solution discharge port 81 (see FIG. 5) of the second cleaning solution nozzle 78 (first cleaning solution supply step) .

  As shown in FIG. 2, the cleaning liquid discharged from the first cleaning liquid nozzle 76 is sprayed on the peripheral end surface and the bottom surface of the outer peripheral portion 15A. Thereby, the SPM adhering to the peripheral end surface and the bottom surface of the outer peripheral portion 15A is washed away. In addition, the cleaning liquid discharged from the first cleaning liquid nozzle 76 bounces off the wall surface of the outer peripheral portion 15A and is deposited on each portion of the inner wall of the first guard 44 (for example, the inner wall of the middle step 60 and the thick portion 59). And flows downward along the inner wall of the lower end portion 58 of the first guard 44 and drops from the lower end of the lower end portion 58 and is received by the first drainage / recovery groove 54 of the first cup 42. Further, the cleaning liquid discharged from the second cleaning liquid discharge port 81 is sprayed on the inner wall of the central portion in the vertical direction of the lower end portion 58 of the first guard 44, and flows downward along the inner wall of the lower end portion 58, and the lower end portion The liquid drops from the lower end of 58 and is received by the first drainage / recovery groove 54 of the first cup 42. The cleaning liquid supplied to the first drainage / recovery groove 54 is directed toward the first drainage / recovery port 92, as shown by the arrow in FIG. It moves in the circumferential direction of the cup 42, and is led from the first drainage / recovery port 92 to the first common pipe 93. Since the flow destination of the liquid passing through the first common piping 93 is set to the first drain piping 96, the cleaning liquid led to the first common piping 93 is drained through the first drainage piping 96. It is led to a unit (not shown) and drained. When the cleaning liquid flows in the first cup 42 and the first common pipe 93, the inner wall of the first cup 42 and the pipe wall of the first common pipe 93 are cleaned.

  In the rinse step (S4), the rinse liquid is scattered on the peripheral end face and the bottom of the outer peripheral portion 15A, and the rinse liquid received by the first guard 44 is the inner wall of the first cup 42 and the first common use. It flows along the pipe wall of the pipe 93. Thus, after the sulfuric acid-containing liquid supplying step (S3), the SPM adhering to the inner wall of the first cup 42, the peripheral end face and the bottom of the outer peripheral portion 15A, and the pipe wall of the first common pipe 93 is rinsed It is conceivable that the solution is washed away. However, the SPM partially remains on the inner wall of the first cup 42, the peripheral end face and bottom surface of the outer peripheral portion 15A, and the pipe wall of the first common pipe 93 only by the cleaning with the rinse liquid in the rinse step (S4). It is also conceivable.

In this processing example, the first cleaning liquid supply process is performed in parallel with the rinse process (S4). Thus, the SPM attached to the inner wall of the first cup 42 and the peripheral end face and bottom surface of the outer peripheral portion 15A, and the SPM attached to the pipe wall of the first common pipe 93 are the first and second The cleaning solution is flushed by the cleaning solution discharged from the cleaning solution nozzles 76 and 78.
In this processing example, when the rinse step (S4) is completed, an organic solvent supply step (S5) is then performed. Thereby, prior to the spin dry step (S6) described next, the rinse liquid entering the fine pattern on the surface of the substrate W is replaced with an organic solvent (IPA) having a low surface tension. Thereby, collapse of the pattern can be prevented in the spin dry step (S6) described next.

  When a predetermined time period has elapsed from the start of discharging the rinse liquid, the controller 8 controls the spin motor 13 to step the substrate W rotating at the sulfuric acid-containing liquid processing speed stepwise to the paddle speed (for example, about 10 rpm). Slow down. When the rotational speed of the substrate W is reduced to its paddle speed (for example, about 10 rpm), the controller 8 controls the spin motor 13 to maintain the rotational speed of the substrate W at its paddle speed. As a result, the liquid film of the rinse liquid is held in the form of a paddle over the entire upper surface of the substrate W.

  After the rotation speed of the substrate W has dropped to the paddle speed (for example, about 10 rpm), when a predetermined time period has elapsed, the control device 8 closes the rinse liquid valve 41 and discharges the rinse liquid from the rinse liquid nozzle 39 Stop. Further, the controller 8 closes the first and second cleaning solution valves 84 and 89 to stop the discharge of the cleaning solution from the first and second cleaning solution nozzles 76 and 78.

  Next, the control device 8 starts an organic solvent supply process (a second chemical solution supply process; step S5). Specifically, the control device 8 moves the organic solvent nozzle 33 from the home position to the processing position by controlling the second arm swing unit 36. Thus, the organic solvent nozzle 33 is disposed above the central portion of the substrate W. Further, the control device 8 controls the guard lifting and lowering unit 48 so that the fourth guard 47 is at the upper position (uppermost position) while the first to third guards 44 to 46 are at the lower position (lowermost position). And the fourth guard 47 is made to face the peripheral end face of the substrate W. As shown in FIG. Further, the control device 8 controls the first recovery valve 95A and the first drain valve 96A to set the circulation destination of the liquid passing through the first common pipe 93 as the first drain pipe 96.

After the organic solvent nozzle 33 is disposed on the central upper surface of the substrate W, the control device 8 opens the organic solvent valve 38 while maintaining the rotational speed of the substrate W at the paddle speed. As a result, as shown in FIG. 7C, IPA is discharged from the discharge port of the organic solvent nozzle 33, and liquid is deposited on the central portion of the upper surface of the substrate W.
While maintaining the rotational speed of the substrate W at the paddle speed, the control device 8 opens the organic solvent valve 38 and discharges the liquid IPA toward the central upper surface of the substrate W from the organic solvent nozzle 33. IPA is supplied to the upper surface of the substrate W, whereby the rinse liquid contained in the liquid film on the upper surface of the substrate W is sequentially replaced with IPA. Thus, the liquid film of IPA covering the entire upper surface of the substrate W is held in a paddle shape on the upper surface of the substrate W. Even after the liquid film on the entire upper surface of the substrate W is substantially replaced with the liquid film of IPA, the supply of IPA to the upper surface of the substrate W is continued. Therefore, IPA is discharged from the peripheral portion of the substrate W.

  The IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the fourth guard 47 opposed to the peripheral end surface of the substrate W. Then, the IPA flowing down along the inner wall of the fourth guard 47 is received by the drainage groove 75 of the third cup 74 while being guided by the overhang portion 71 of the third guard 46, and the third cup From the bottom of 74, it is led to a drainage unit (not shown) through a drainage pipe (not shown).

  By the way, in the organic solvent supplying step (S5) of rotating the substrate W at the paddle speed, since the centrifugal force acting on the IPA on the substrate W at the peripheral edge of the substrate W is small, IPA is substantially downward from the peripheral edge of the substrate W Drop it down. Therefore, some of the IPAs discharged from the side of the substrate W enter the inside of the innermost first guard 42 instead of the fourth guard 47 as shown by the broken line in FIG. 7C. There is a possibility of adhering to the inner wall of the first cup 42 or the pipe wall of the first common pipe 93. Temporarily, the next substrate processing (resist removal processing) remains with IPA adhering (remaining) on the inner wall of the first cup 42, the outer peripheral portion 15A of the spin base 15 and the pipe wall of the first common pipe 93 When the sulfuric acid-containing liquid supply step (S3) is started, there is a possibility that the SPM and IPA may be mixed in the sulfuric acid-containing liquid supply step (S3).

  Therefore, the controller 8 opens the first cleaning solution valve 84 and the second cleaning solution valve 89 in parallel with the organic solvent supply step (S5) as shown in FIGS. 3 and 7C. The cleaning solution is discharged from each of the first cleaning solution discharge port 80 of the cleaning solution nozzle 76 and the second cleaning solution discharge port 81 of the second cleaning solution nozzle 78 (second cleaning solution supply step). That is, in parallel with the organic solvent supply step (S5), the second cleaning liquid supply step is performed.

  In the second cleaning liquid supply process, the cleaning liquid discharged from the first cleaning liquid nozzle 76 is sprayed to the peripheral end surface and the bottom surface of the outer peripheral portion 15A. In addition, the cleaning liquid discharged from the second cleaning liquid discharge port 81 is sprayed on the upper inner wall of the lower end portion 58 of the first guard 44. In the second cleaning liquid supply process, the cleaning liquid flows in the same manner as in the first cleaning liquid supply process. As a result, the IPA attached to the inner end face and the bottom surface of the inner wall of the first cup 42 and the outer peripheral portion 15A, and the IPA attached to the pipe wall of the first common pipe 93 are washed away by the cleaning liquid.

  When a predetermined paddle time (for example, about 10 seconds) has elapsed from the start of IPA discharge, the controller 8 controls the spin motor 13 to continue the IPA discharge and continues to rotate the substrate W from paddle speed to high rotational speed (for example, about Accelerate to 1000 rpm). After the substrate W reaches the high rotation speed, the controller 8 closes the organic solvent valve 38 to stop the discharge of IPA from the organic solvent nozzle 33, and closes the first and second cleaning solution valves 84 and 89. Then, the discharge of the cleaning liquid from the first and second cleaning liquid nozzles 76 and 78 is stopped.

  When the discharge of the IPA is stopped, the control device 8 then performs a spin dry process (step S6) with the fourth guard 47 facing the peripheral end face of the substrate W as shown in FIG. 7D. Run. That is, the controller 8 maintains the rotational speed of the substrate W at a high rotational speed (for example, about 1000 rpm). Thereby, the IPA adhering to the substrate W is shaken off and the substrate W is dried.

  Further, in parallel with the spin dry step (S 6), the controller 8 opens the first cleaning solution valve 84 and the second cleaning solution valve 89 to make the first cleaning solution discharge port 80 of the first cleaning solution nozzle 76. And the second cleaning liquid discharge port 81 of the second cleaning liquid nozzle 78 to discharge the cleaning liquid (third cleaning liquid supply step). That is, in parallel with the spin dry step (S6), the third cleaning liquid supply step is performed.

  In the third cleaning liquid supply process, the cleaning liquid discharged from the first cleaning liquid nozzle 76 is sprayed to the peripheral end surface and the bottom surface of the outer peripheral portion 15A. In addition, the cleaning liquid discharged from the second cleaning liquid discharge port 81 is sprayed on the upper inner wall of the lower end portion 58 of the first guard 44. In the third cleaning liquid supply process, the cleaning liquid flows in the same manner as in the first cleaning liquid supply process. As a result, the IPA attached to the inner end face and the bottom surface of the inner wall of the first cup 42 and the outer peripheral portion 15A, and the IPA attached to the pipe wall of the first common pipe 93 are washed away by the cleaning liquid.

When the spin dry process (S6) is performed for a predetermined period, the control device 8 drives the spin motor 13 to stop the rotation of the spin chuck 3 (the rotation of the substrate W) (step S7).
As a result, the resist processing on one substrate W is completed, and the processing robot 2 unloads the processed substrate W from the processing chamber 2 (step S8).

Next, the substrate W to be processed next is carried into the processing chamber 2, and the substrate processing (resist removal processing) shown in FIG. 6 is performed again. Such substrate processing is repeatedly performed until processing of one lot (for example, 25 sheets) of substrates W is completed.
In this embodiment, the sulfuric acid-containing liquid supply step (S3) and the organic solvent supply step (S5) are performed in one processing chamber. SPM and IPA are a combination of drug solutions that pose a danger to contact. Specifically, if SPM and IPA are mixed, there is a risk of explosion due to the dehydrating action of the sulfuric acid contained in SPM.

  As described above, according to this embodiment, the sulfuric acid-containing liquid supply step (S3), the rinse step (S4), the organic solvent supply step (S5) and the spin dry step (S6) are performed in this order in the common processing chamber. To be executed. Further, during the execution of the rinsing step (S4), the organic solvent supplying step (S5) and the spin drying step (S6), the cleaning liquid is supplied to the inner wall of the first cup 42 and the peripheral end surface and the bottom of the outer peripheral portion 15A.

Temporarily, the organic solvent supply step (S5) is started with the SPM adhering (remaining) on the inner wall of the first cup 42, the outer peripheral portion 15A of the spin base 15 and the tube wall of the first common pipe 93 As a result, there is a risk that the SPM and the IPA may be mixed in the organic solvent supply step (S5).
In this embodiment, in parallel to the rinse step (S4) performed after the sulfuric acid-containing liquid supply step (S3), the cleaning liquid is applied to the inner wall of the first cup 42 and the peripheral end face and bottom surface (base wall surface) of the outer peripheral portion 15A. By supplying the SPM, the SPM is removed from the inner peripheral surface of the first cup 42 and the peripheral end surface and the bottom surface of the outer peripheral portion 15A prior to the start of the organic solvent supply step (S5). Therefore, at the start of the organic solvent supply step (S5), no SPM remains on the inner wall of the first cup 42 and the peripheral end face and bottom surface of the outer peripheral portion 15A, and accordingly, with the SPM in the organic solvent supply step (S5) It is possible to reliably prevent the occurrence of a collision with IPA.

Further, temporarily, while the IPA is adhering (remaining) to the inner wall of the first cup 42, the outer peripheral portion 15A of the spin base 15 and the pipe wall of the first common pipe 93, the following substrate processing (resist removal When the sulfuric acid-containing liquid supply step (S3) of (processing) is started, there is a possibility that the SPM and the IPA may be mixed in the sulfuric acid-containing liquid supply step (S3).
In this embodiment, during the organic solvent supplying step (S5), the cleaning liquid is supplied parallel to the organic solvent supplying step (S5) to the inner wall of the first cup 42 and the peripheral end face and the bottom of the outer peripheral portion 15A. Then, the IPA is removed from the inner wall of the first cup 42 and the peripheral end surface and the bottom surface of the outer peripheral portion 15A. Therefore, after the end of the organic solvent supply step (S5), IPA does not remain on the inner wall of the first cup 42 and the peripheral end surface and bottom surface of the outer peripheral portion 15A. In the step (S3), it is possible to reliably prevent the occurrence of a contact between SPM and IPA. In addition, by supplying the cleaning liquid to the inner wall of the first cup 42 and the peripheral end face and the bottom surface of the outer peripheral portion 15A in parallel with the spin dry step (S6), the first cup is removed during the spin dry step (S6). The IPA is removed from the inner wall and the peripheral end surface and the bottom surface of the outer peripheral portion 15A. Therefore, after completion of the spin dry step (S6), IPA does not remain on the inner wall of the first cup 42 and the peripheral end surface and bottom surface of the outer peripheral portion 15A. Therefore, the sulfuric acid-containing liquid supply step of the next substrate processing In (S3), it is possible to reliably prevent the occurrence of a collision between SPM and IPA.

As described above, even if the combination of a plurality of types of chemical solutions used for substrate processing is a combination such as SPM and IPA that involves danger in handling, it is possible to ensure that the chemical solutions do not mix (SPM and IPA mixed). Thus, it is possible to provide the substrate processing apparatus 1 capable of completing the substrate processing in one processing chamber 2.
Further, in parallel with the supply of the cleaning liquid to the inner wall of the first cup 42 and the peripheral end surface and the bottom surface of the outer peripheral portion 15A, the circulation destination of the liquid passing through the first common pipe 93 is set to the first drainage pipe 96 Be done. Therefore, the cleaning liquid supplied to the inner wall of the first cup 42 and the peripheral end surface and the bottom surface of the outer peripheral portion 15A passes through the first drainage / recovery port 92 at the bottom of the first cup 42 to the first common piping 93. , And is led to the first drainage pipe 96. Therefore, even when SPM or IPA adheres to the pipe wall of the first common pipe 93 in the sulfuric acid-containing liquid supply step (S3) or the organic solvent supply step (S5), the first common pipe 93 is used. The adhering SPM or IPA can be washed away by the flowing washing solution. As a result, it is possible to reliably prevent the SPM and the IPA from being mixed in the pipe wall of the first common pipe 93.

  In addition, the first cleaning solution nozzle 76 is disposed below the side of the outer peripheral portion 15A. If the first cleaning solution nozzle 76 is disposed on the side of the outer peripheral portion 15A of the spin base 15, the first cleaning solution nozzle intervenes between the spin base and the cup in plan view, so that the substrate processing apparatus 1 is enlarged. However, since the first cleaning solution nozzle 76 is not disposed on the side of the outer peripheral portion 15A of the spin base 15, the substrate processing apparatus 1 does not increase in size. Therefore, the cleaning liquid can be supplied to the peripheral end surface and the outer peripheral surface of the outer peripheral portion 15A of the spin base 15 without increasing the size of the substrate processing apparatus 1. In addition, since the cleaning liquid is supplied to the outer peripheral portion 15A from diagonally below, the first or second chemical solution adhering to the bottom surface of the outer peripheral portion 15A of the spin base 15 can be favorably removed.

  In addition, since the second cleaning solution nozzle 78 is disposed in a region not adjacent to the first drainage / recovery port 92, the cleaning solution is discharged from each second cleaning solution nozzle 78 and supplied to the first cup 42. Is moved in the first cup 42 toward the first drainage / recovery port 92 in the circumferential direction of the first cup 42, and the first common piping from the first drainage / recovery port 92 You will be led to 93. That is, the distance for the cleaning liquid to move in the first cup 42 can be increased. Thereby, the SPM or IPA adhering in the first cup 42 can be efficiently removed.

As mentioned above, although one implementation of this invention was described, this invention can also be implemented with other forms.
For example, in the above-described process example, it has been described that the first cleaning liquid supply process is performed in parallel with the rinsing process (S4), but the first cleaning liquid supply process is started after the completion of the rinsing process (S4). The organic solvent supplying step (S5) may be started after the end of the cleaning liquid supplying step 1 described above. In addition, the first cleaning liquid supply process is started from the stage before the end of the rinse process (S4), and the organic solvent supply process (S5) is performed after the completion of the first cleaning liquid supply process after the completion of the rinse process (S4). You may start it.

  In the above-described process example, the second cleaning liquid supply process is described to be performed in parallel with the organic solvent supply process (S5), but after the end of the organic solvent supply process (S5), the spin dry process (S6) starts You may make it perform a 2nd washing | cleaning-liquid supply process previously. In addition, the second cleaning liquid supply process is started from the stage before the end of the organic solvent supply process (S5), and after the completion of the second cleaning liquid supply process after the end of the organic solvent supply process (S5) S6) may be started.

In the above-described processing example, although it has been described that both the second and third cleaning liquid supply steps for removing the IPA adhering (remaining) to the first cup 42 and the like are performed, the second and third It is sufficient to carry out at least one of the washing liquid supply steps of No. 3, and it is not necessary to carry out both the second and third washing liquid supply steps.
Further, in the above-described processing example, in the organic solvent supplying step (S5), the processing using IPA is performed on the surface of the substrate W while holding the liquid film of IPA in a paddle shape. In the organic solvent supply step (S5), the substrate W may be rotated at a relatively high rotational speed (for example, several hundred rpm).

In the first cleaning liquid supply process described above, a threshold is provided for the rotational speed of the substrate W in the rinse process (S4), and the end timing of the first cleaning liquid supply process is determined according to the threshold. It is also good.
In addition, when the first cleaning liquid supply process is completed while the rotational speed of the substrate W in the rinse process (S4) is equal to or less than the threshold, the cleaning of the inner wall of the first cup 42 is not complete. The opening of the organic solvent valve 38 in the organic solvent supply step (S5) to be executed may be prohibited (interlock).

Further, the end timings of the first to third cleaning liquid supply steps may be determined based on the integrated flow rate (integrated usage amount) of the cleaning liquid in the cleaning liquid supply step. Specifically, an integrated flow meter is provided in the cleaning liquid supply units 77 and 79, and the integrated flow rate of the cleaning liquid is calculated based on the value.
In addition, when each of the first to third cleaning solution supply steps is finished while the integrated flow rate of the cleaning solution is equal to or less than the threshold value, the cleaning is performed on the inner wall of the first cup 42 as incomplete. The opening of the sulfuric acid containing liquid valve 32 in the organic solvent supplying step (S5) or the sulfuric acid containing liquid supplying step (S3) may be prohibited (interlock).

Further, in the first to third cleaning liquid supply steps described above, the end timings of the first to third cleaning liquid supply steps are determined based on the integrated flow rate (integrated usage amount) of the cleaning liquid in the cleaning liquid supply step. You may do so. Specifically, an integrated flow meter is provided in the cleaning liquid supply units 77 and 79, and the integrated flow rate of the cleaning liquid is calculated based on the value.
In addition, when each of the first to third cleaning solution supply steps is finished while the integrated flow rate of the cleaning solution is equal to or less than the threshold value, the cleaning is performed on the inner wall of the first cup 42 as incomplete. The opening of the organic solvent valve 38 in the organic solvent supplying step (S5) or the sulfuric acid-containing liquid supplying step (S3) may be prohibited (interlock).

In the above embodiment, the case of cleaning the first cup 42 of the plurality of cups (the first cup 42, the second cup 43, and the cup portion 63) has been described as an example. The cup 43 or the cup portion 63 may be cleaned.
For example, in the case where the second guard 45 faces the peripheral surface of the substrate W in the sulfuric acid-containing liquid supply step (S3), the second cup 43 may be cleaned in the first cleaning liquid supply step. In this case, in the sulfuric acid-containing liquid supply step (S3), the control device 8 controls the guard lifting and lowering unit 48 to make the second guard 45 face the peripheral end surface of the substrate W, and the second recovery valve 100A and the The second drainage pipe 101 is set to the second recovery pipe 100 by controlling the second drainage valve 101A. Then, in the first cleaning liquid supply step, the control device 8 controls the guard lifting and lowering unit 48 to make the second guard 45 face the peripheral end face of the substrate W, and the second recovery valve 100A and the second drainage liquid. The flow destination of the second common pipe 98 is switched to the second drainage pipe 101 by controlling the valve 101A, and the first cleaning liquid valve 84 is opened to discharge the cleaning liquid from the first cleaning liquid nozzle 76. Thus, the cleaning liquid discharged from the first cleaning liquid nozzle 76 is sprayed on the peripheral end surface and the bottom surface of the outer peripheral portion 15A. Thereby, the SPM adhering to the peripheral end surface and the bottom surface of the outer peripheral portion 15A is washed away. Further, the cleaning liquid discharged from the first cleaning liquid nozzle 76 bounces back on the peripheral end surface and the bottom surface of the outer peripheral portion 15A and contacts the inner wall of the guide portion 62 of the second guard 45, as shown in FIG. The liquid flows downward along the inner wall of the reference), drops from the lower end of the cylindrical portion 64, and is received by the second drainage / recovery groove 55 (see FIG. 2 etc.) of the second cup 43. The cleaning liquid supplied to the second drainage / recovery groove 55 is directed in the second drainage / recovery port 97 in the circumferential direction of the second cup 43 toward the second drainage / recovery port 97. It moves and is led from the second drainage / recovery port 97 to the second common pipe 98. The cleaning liquid supplied to the second drainage / recovery groove 55 is directed in the second drainage / recovery port 97 in the circumferential direction of the second cup 43 toward the second drainage / recovery port 97. It moves and is led from the second drainage / recovery port 97 to the second common pipe 98. Since the circulation destination of the second common piping 98 is set to the second drainage piping 101, the cleaning liquid led to the second common piping 98 is a drainage unit (shown in FIG. Not be led) and drained. When the cleaning liquid flows in the second cup 43 and the second common pipe 98, the inner wall of the second cup 43 and the pipe wall of the second common pipe 98 are cleaned.

  When the third guard 46 faces the peripheral surface of the substrate W in the sulfuric acid-containing liquid supply step (S3), the cup portion 63 may be cleaned in the first cleaning liquid supply step. In this case, in the sulfuric acid-containing liquid supply step (S3), the control device 8 controls the guard lifting and lowering unit 48 to make the third guard 46 face the peripheral end face of the substrate W, and the third recovery valve 105A and the third The drain valve 106A of No. 3 is controlled to set the circulation destination of the third common pipe 103 as the third collection pipe 105 in advance. Then, in the first cleaning liquid supply process, the control device 8 controls the guard lifting and lowering unit 48 to make the third guard 46 face the peripheral end face of the substrate W, and the third recovery valve 105A and the third drainage liquid. The valve 106A is controlled to switch the circulation destination of the third common pipe 103 to the third liquid discharge pipe 106, and the first cleaning liquid valve 84 is opened to discharge the cleaning liquid from the first cleaning liquid nozzle 76. Thus, the cleaning liquid discharged from the first cleaning liquid nozzle 76 is sprayed on the peripheral end surface and the bottom surface of the outer peripheral portion 15A. Thereby, the SPM adhering to the peripheral end surface and the bottom surface of the outer peripheral portion 15A is washed away. Further, the cleaning liquid discharged from the first cleaning liquid nozzle 76 bounces back on the peripheral end face and the bottom of the outer peripheral portion 15A, and contacts the inner wall of the lower end 68 (see FIG. 2 etc.) of the third guard 46 It flows downward along the inner wall and drops from the lower end of the lower end 68 and is received by the third drainage / recovery groove 66 (see FIG. 2 etc.) of the cup 63 of the second guard 45. The cleaning liquid supplied to the third drainage / recovery groove 66 moves in the third drainage / recovery groove 66 toward the third drainage / recovery port 102 in the circumferential direction of the cup portion 63. The third drainage / recovery port 102 leads to the third common pipe 103. The cleaning liquid supplied to the third drainage / recovery groove 66 moves in the third drainage / recovery groove 66 toward the third drainage / recovery port 102 in the circumferential direction of the cup portion 63. The third drainage / recovery port 102 leads to the third common pipe 103. Since the circulation destination of the third common piping 103 is set to the third drainage piping 106, the cleaning liquid led to the third common piping 103 is discharged through the third drainage piping 106 (shown in FIG. Not be led) and drained. When the cleaning liquid flows in the cup portion 63 and in the third common pipe 103, the inner wall of the cup portion 63 and the pipe wall of the third common pipe 103 are cleaned.

  Further, in the above-described embodiment, the common pipes 93, 98, 103 are connected to the bottoms of the cups 42, 43, 63, and the circulation destinations of the liquid (processing liquid or cleaning liquid) passing through the common pipes 93, 98, 103 are collected. The configuration for switching between the piping 95, 100, 105 and the drainage piping 96, 101, 106 has been described as an example. However, such a configuration is removed, and the drainage pipes 96, 101, 106 may be connected to the bottoms of the cups 42, 43, 63. That is, instead of the drainage / recovery ports 92, 97, 102, drainage ports may be provided, and the drainage pipes 96, 101, 106 may be connected to the drainage / recovery ports 92, 97, 102.

Also, a three-way valve may be used as a switching valve that switches the circulation destination of the fluid passing through the common piping 93, 98, 103 between the recovery piping 95, 100, 105 and the drainage piping 96, 101, 106.
In the embodiment described above, the cleaning liquid discharged from the first cleaning liquid nozzle 76 is applied to both the peripheral end surface and the bottom surface of the outer peripheral portion 15A by way of example. The cleaning solution may be sprayed on at least one side.

In the above-described embodiment, the cleaning liquid discharged from the second cleaning liquid nozzle 78 is described as being applied to the inner wall of the first cup 41 after being once applied to the lower end portion 58. The cleaning liquid discharged from the two cleaning liquid nozzles 78 may be directly supplied to the inner wall of the first cup 41 (for example, the inner wall of the bottom 51).
In the above-described embodiment, the second cleaning liquid nozzle 78 has been described as an example in which the second cleaning liquid discharge port 81 is directed obliquely downward, but the second cleaning liquid discharge port 81 is in the horizontal direction. It may be sideways along.

Moreover, in the above-mentioned embodiment, although the multistage processing cup 7 was mentioned as the example and demonstrated, this invention is applicable also to the processing cup which consists of a single cup.
In the above embodiment, the first and second cleaning solution nozzles 76, 78 are provided by forming the first and second cleaning solution discharge ports 80, 81 in the tapered surface 24A (the outer peripheral surface of the boss 21). However, the first and second cleaning solution nozzles 76 and 78 may have a nozzle casing separately from the boss 21.

In the above embodiment, although it has been described that both the first cleaning solution nozzle 76 and the second cleaning solution nozzle 78 are used in each cleaning solution supply process, only one of the first and second cleaning solution nozzles 76 and 78 is used. May be used.
Although SPM was illustrated as an example of a sulfuric acid content liquid in the above-mentioned embodiment, sulfuric acid can be used besides SPM as an example of a sulfuric acid content liquid.

In addition, the organic solvent contains at least one of IPA, methanol, ethanol, HFE (hydrofluoroether) and acetone. Moreover, as an organic solvent, not only the case where it consists only of a single-piece component but the liquid mixed with other components may be sufficient. For example, it may be a mixture of IPA and acetone, or a mixture of IPA and methanol.
A combination of sulfuric acid-containing liquid and organic solvent was exemplified as a combination of the first chemical solution and the second chemical solution that may cause danger to the touch, but in addition, nitric acid such as nitric acid or hydrofluoric nitric acid (mixed liquid of hydrofluoric acid and nitric acid) The combination of the contained liquid and the organic solvent, the combination of aqua regia and sulfuric acid, and the like can be exemplified as a combination in which there is a risk of contact.

Further, the present invention is widely applied not only to the combination of the first chemical solution and the second chemical solution in which there is a danger in the contact, but also to the combination of the first chemical solution and the second solution which is not suitable for the contact. The present invention can also be applied to a combination such as a combination of an acid and an alkali which produces a reactant upon interaction.
In addition, various design changes can be made within the scope of matters described in the claims.

1 substrate processing apparatus 2 processing chamber 3 spin chuck (substrate holding and rotating mechanism)
15 spin base 15A outer peripheral portion 42 first cup 43 second cup 63 cup portion (cup)
92 1st recovery / drainage port (drainage port)
93 1st common piping 95 1st recovery piping 95A 1st recovery valve 96 1st drainage piping 96A 1st drainage valve 97 2nd recovery / drainage opening (drainage)
98 Second common piping 98
99 second switching valve 100 second recovery pipe 100A second recovery valve 101 second drainage pipe 101A second drainage valve 102 third recovery / drain port (drain)
103 third common piping 105 third recovery piping 105A third recovery valve 106 third drainage piping 106A third drainage valve A1 rotation axis W substrate

Claims (21)

A processing chamber,
A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding the substrate, the substrate holding and rotation mechanism disposed in the processing chamber;
An annular cup which is provided so as to surround the periphery of the substrate holding and rotating mechanism, and which holds a processing solution discharged from the substrate rotated by the substrate holding and rotating mechanism;
First chemical liquid supply means for supplying a first chemical liquid to the substrate held by the substrate holding and rotating mechanism;
A second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the substrate held by the substrate holding and rotating mechanism;
Rinse liquid supply means for supplying a rinse liquid to the substrate held by the substrate holding and rotating mechanism;
A cleaning solution nozzle having a cleaning solution discharge port for supplying a cleaning solution to a cup inner wall which is an inner wall of the cup and / or a base wall which is a wall surface of an outer peripheral portion of the spin base;
Cleaning solution supply means for supplying the cleaning solution to the cleaning solution nozzle;
Shared piping connected to the drainage / recovery port formed at the bottom of the cup;
A recovery pipe connected to the common pipe for recovering the first chemical solution or the second chemical solution;
Drain piping connected to the common piping;
A switching valve that switches the flow destination of the liquid passing through the common piping between the recovery piping and the drainage piping;
A first chemical solution supply process of supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism by controlling the first chemical solution supply unit and the second chemical solution supply unit; and the first chemical solution supply process After the completion of the first chemical solution supply process, and a second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism after the step of Prior to the start of the chemical solution supply process, the rinse solution is supplied to the substrate rotated by the substrate holding and rotating mechanism by the rinse solution supply unit to rinse the first chemical solution adhering to the surface of the substrate. Rotation processing control means for executing
After completion of the rinse step, prior to the start of the second chemical solution supply step, the cleaning solution supply means is controlled to discharge the cleaning solution from the cleaning solution discharge port to supply the cleaning solution to the inner wall of the cup and / or the base wall surface. Cleaning control means ,
Substrate processing including control of setting the flow destination of the liquid passing through the common pipe to the drainage pipe by controlling the switching valve in parallel with the supply of the washing liquid by the washing control means apparatus.   The substrate processing apparatus according to claim 1, wherein the cleaning solution nozzle includes a second cleaning solution nozzle having a second cleaning solution discharge port for supplying the cleaning solution to the inner wall of the cup. A processing chamber,
A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding the substrate, the substrate holding and rotation mechanism disposed in the processing chamber;
An annular cup which is provided so as to surround the periphery of the substrate holding and rotating mechanism, and which holds a processing solution discharged from the substrate rotated by the substrate holding and rotating mechanism;
First chemical liquid supply means for supplying a first chemical liquid to the substrate held by the substrate holding and rotating mechanism;
A second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the substrate held by the substrate holding and rotating mechanism;
A cleaning solution nozzle which is disposed opposite to a base wall surface which is a wall surface of an outer peripheral portion of the spin base and has a first cleaning solution discharge port for discharging the cleaning solution toward the base wall surface;
Cleaning solution supply means for supplying the cleaning solution to the cleaning solution nozzle;
A first chemical solution supply process of supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism by controlling the first chemical solution supply unit and the second chemical solution supply unit; and the first chemical solution supply process A second chemical solution supplying step of supplying a second chemical solution different in type from the first chemical solution to the substrate being rotated by the substrate holding and rotating mechanism,
After the end of the first chemical liquid supply process, the cleaning liquid supply means is controlled prior to the start of the second chemical liquid supply process and / or during and / or after the execution of the second chemical liquid supply process. 1. A substrate processing apparatus comprising: a cleaning control means for discharging a cleaning solution from the cleaning solution discharge port 1 and supplying the cleaning solution to the base wall surface.   The substrate processing apparatus according to claim 3, wherein the cleaning solution nozzle is disposed in a state where the first cleaning solution discharge port is directed obliquely upward. A processing chamber,
A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding the substrate, the substrate holding and rotation mechanism disposed in the processing chamber;
An annular cup which is provided in an annular shape surrounding the periphery of the substrate holding and rotating mechanism, and is for storing a processing solution discharged from the substrate rotated by the substrate holding and rotating mechanism, and drains the bottom wall A cup with a mouth formed,
First chemical liquid supply means for supplying a first chemical liquid to the substrate held by the substrate holding and rotating mechanism;
A second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the substrate held by the substrate holding and rotating mechanism;
A second cleaning solution discharge port for supplying a cleaning solution to the inner wall of the cup, which is an inner wall of the cup, and a plurality of the cleaning solution are arranged along the circumferential direction of the cup on the side of the substrate holding and rotating mechanism A cleaning solution nozzle having a second cleaning solution outlet not disposed in a region close to the mouth;
Cleaning solution supply means for supplying the cleaning solution to the cleaning solution nozzle;
A first chemical solution supply process of supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism by controlling the first chemical solution supply unit and the second chemical solution supply unit; and the first chemical solution supply process A second chemical solution supplying step of supplying a second chemical solution different in type from the first chemical solution to the substrate being rotated by the substrate holding and rotating mechanism,
After the end of the first chemical liquid supply process, the cleaning liquid supply means is controlled prior to the start of the second chemical liquid supply process and / or during and / or after the execution of the second chemical liquid supply process. 2. A substrate processing apparatus comprising: a cleaning control means for discharging a cleaning solution from the cleaning solution discharge port 2 and supplying the cleaning solution to the inner wall of the cup. And a rinse liquid supply unit for supplying a rinse liquid to the substrate held by the substrate holding and rotating mechanism.
The rotation processing control means supplies the rinse liquid by the rinse liquid supply means to the substrate rotated by the substrate holding and rotating mechanism prior to the start of the second chemical liquid supply process after the completion of the first chemical liquid supply process. And rinse control means for performing a rinse step of rinsing away the first chemical solution adhering to the surface of the substrate;
The cleaning control means includes a first cleaning control means for supplying a cleaning liquid in parallel with the rinse step and / or prior to the start of the second chemical liquid supply step after the end of the rinse step. The substrate processing apparatus as described in any one of -5. A processing chamber,
A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding the substrate, the substrate holding and rotation mechanism disposed in the processing chamber;
An annular cup which is provided so as to surround the periphery of the substrate holding and rotating mechanism, and which holds a processing solution discharged from the substrate rotated by the substrate holding and rotating mechanism;
First chemical liquid supply means for supplying a first chemical liquid to the substrate held by the substrate holding and rotating mechanism;
A second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the substrate held by the substrate holding and rotating mechanism;
Rinse liquid supply means for supplying a rinse liquid to the substrate held by the substrate holding and rotating mechanism;
A cleaning solution nozzle having a cleaning solution discharge port for discharging a cleaning solution toward a base wall surface which is a wall surface of an outer peripheral portion of the spin base;
Cleaning solution supply means for supplying the cleaning solution to the cleaning solution nozzle;
A first chemical solution supply process of supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism by controlling the first chemical solution supply unit and the second chemical solution supply unit; and the first chemical solution supply process After the completion of the first chemical solution supply process, and a second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism after the step of Prior to the start of the chemical solution supply process, a rinse process is performed by supplying a rinse liquid to the substrate rotated by the substrate holding and rotating mechanism to rinse out the first chemical solution adhering to the surface of the substrate. Control means,
A cleaning control means for controlling the cleaning liquid supply means to supply the cleaning liquid to the base wall surface by controlling the cleaning liquid supply means in parallel with the rinse step and / or prior to the start of the second chemical solution supply step after completion of the rinse step; Substrate processing equipment, including.   The said washing | cleaning control means contains the 2nd washing | cleaning control means which supplies a washing | cleaning liquid in parallel with a said 2nd chemical | medical solution supply process, and / or after completion | finish of the said 2nd chemical | medical solution supply process. The substrate processing apparatus according to one aspect. The rotation processing control means further includes spin dry control means for performing a spin dry step of shaking off the liquid component on the surface of the substrate by rotating the substrate by the substrate holding and rotating mechanism after completion of the second chemical liquid supply step. ,
The substrate processing apparatus according to any one of claims 1 to 8, wherein the cleaning control unit includes a third cleaning control unit that supplies a cleaning solution in parallel with the spin dry process. Shared piping connected to the drainage / recovery port formed at the bottom of the cup;
A recovery pipe connected to the common pipe for recovering the first chemical solution or the second chemical solution;
Drain piping connected to the common piping;
A switching valve that switches the flow destination of the liquid passing through the common piping between the recovery piping and the drainage piping;
The apparatus further includes a distribution destination setting control unit configured to control the switching valve in parallel with the supply of the cleaning liquid by the cleaning control unit to set the circulation destination of the liquid passing through the common piping to the drainage pipe. Item 10. The substrate processing apparatus according to any one of items 3 to 9. The first chemical solution is a sulfuric acid-containing solution containing sulfuric acid,
The substrate processing apparatus according to any one of claims 1 to 10, wherein the second chemical solution is an organic solvent. A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding a substrate, and provided so as to surround the substrate holding and rotation mechanism, the substrate holding A cleaning solution is supplied to a cup for storing processing liquid discharged from a substrate rotated by a rotating mechanism, a cup inner wall which is an inner wall of the cup, and / or a base wall which is a wall of an outer peripheral portion of the spin base. For cleaning , a common pipe connected to the drainage / recovery port formed at the bottom of the cup, and the common pipe connected to the common pipe, and a recovery pipe for recovering the first chemical solution or the second chemical solution And a method of processing a substrate using a substrate processing apparatus including a drainage pipe connected to the common pipe ,
Supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism;
A second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supply process;
After the completion of the first chemical solution supply process and prior to the start of the second chemical solution supply process, a rinse liquid is supplied to the substrate rotated by the substrate holding and rotating mechanism to adhere to the surface of the substrate 1 Rinse process to wash away the chemical solution,
Wherein prior to the start of the rinsing step after completion the second chemical liquid supplying step, by ejecting the cleaning liquid from the cleaning liquid nozzles, seen including a cleaning solution supply step of supplying a cleaning liquid to the cup inner wall,
The substrate processing method, wherein the cleaning liquid supply step is performed in a state in which a flow destination of liquid passing through the common piping is set to the drainage piping . A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding a substrate, and provided so as to surround the substrate holding and rotation mechanism, the substrate holding A cup for storing the processing liquid discharged from the substrate rotated by the rotation mechanism and a base wall surface which is a wall surface of the outer periphery of the spin base are disposed opposite to each other, and the cleaning liquid is discharged toward the base wall surface. A method of processing a substrate using a substrate processing apparatus including: a cleaning solution nozzle having a first cleaning solution outlet;
Supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism;
A second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supply process;
After the end of the first chemical liquid supply process, prior to the start of the second chemical liquid supply process, and / or during and / or after the execution of the second chemical liquid supply process, the cleaning liquid is discharged from the first cleaning liquid discharge port And a cleaning liquid supply step of supplying a cleaning liquid to the base wall surface.   The substrate processing apparatus according to claim 13, wherein the cleaning solution nozzle is disposed in a state where the first cleaning solution discharge port is directed obliquely upward. A substrate holding and rotating mechanism having a spin base rotatable around a predetermined rotation axis and rotating around the rotation axis while holding a substrate, and provided in an annular shape surrounding the periphery of the substrate holding and rotation mechanism A cup for storing the processing liquid discharged from the substrate rotated by the holding and rotating mechanism, and a cup having a drainage port formed on the bottom wall, and a cleaning liquid supplied to the inner wall of the cup which is the inner wall of the cup A second cleaning liquid discharge port, and a plurality of second cleaning liquid discharge ports are disposed along the circumferential direction of the cup on the side of the substrate holding and rotating mechanism and are not disposed in the area close to the drainage port. A method of processing a substrate using a substrate processing apparatus including: a cleaning solution nozzle having a cleaning solution outlet 2;
Supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism;
A second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supply process;
After the end of the first chemical liquid supply process, prior to the start of the second chemical liquid supply process, and / or during and / or after the execution of the second chemical liquid supply process, the cleaning liquid is discharged from the second cleaning liquid discharge port And a cleaning liquid supply step of supplying a cleaning liquid to the inner wall of the cup. In the substrate processing method, a rinse liquid is supplied to the substrate rotated by the substrate holding and rotating mechanism before the start of the second chemical liquid supply process after the completion of the first chemical liquid supply process, and the surface of the substrate is processed. Further including a rinsing step of washing out the first chemical solution adhering to the
The cleaning liquid supply step includes a first cleaning liquid supply step of discharging the cleaning liquid from the cleaning liquid nozzle in parallel with the rinse step and / or prior to the start of the second chemical liquid supply step after the rinse step is completed. The substrate processing method according to any one of claims 13 to 15, comprising: A substrate holding and rotating mechanism having a spin base rotatable about a predetermined rotation axis and rotating around the rotation axis while holding a substrate, and provided so as to surround the substrate holding and rotation mechanism, the substrate holding A substrate processing apparatus comprising: a cup for storing a processing solution discharged from a substrate rotated by a rotation mechanism; and a cleaning solution nozzle for supplying a cleaning solution to a base wall surface which is a wall surface of an outer peripheral portion of the spin base A method of processing a substrate using
Supplying a first chemical solution to the substrate rotated by the substrate holding and rotating mechanism;
A second chemical solution supply process of supplying a second chemical solution different in type from the first chemical solution to the substrate rotated by the substrate holding and rotating mechanism after the first chemical solution supply process;
After the completion of the first chemical solution supply process and prior to the start of the second chemical solution supply process, a rinse liquid is supplied to the substrate rotated by the substrate holding and rotating mechanism to adhere to the surface of the substrate 1 Rinse process to wash away the chemical solution,
In parallel to the rinse step and / or after the end of the rinse step and prior to the start of the second chemical solution supply step, the cleaning solution is discharged from the cleaning solution nozzle to supply the cleaning solution to the base wall surface And a substrate processing method.   The cleaning liquid supply step includes a second cleaning liquid supply step of discharging the cleaning liquid from the cleaning liquid nozzle in parallel with the second chemical liquid supply step and / or after the end of the second chemical liquid supply step. The substrate processing method as described in any one of -17. The substrate processing method includes a spin dry step of rotating the substrate by the substrate holding and rotating mechanism after the completion of the second chemical liquid supply step to shake off the liquid component on the surface of the substrate,
The cleaning liquid supply process according to any one of claims 12 to 18, further comprising: a third cleaning liquid supply process of discharging a cleaning liquid from the cleaning liquid nozzle in parallel with the spin dry process and / or after the spin dry process. The substrate processing method as described in a term. The cup includes a plurality of cups provided so as not to overlap in plan view,
The substrate processing method according to any one of claims 12 to 19, wherein in the cleaning liquid supply step, a first cup provided at an innermost side of the plurality of cups is cleaned. The substrate processing apparatus includes a common pipe connected to the drainage / recovery port formed at the bottom of the cup, and a collection pipe for collecting the first chemical solution or the second chemical solution connected to the common pipe. And drain piping connected to the common piping,
The cleaning solution supply step executes a flow destination of the liquid through the shared pipe in a state set in the drain pipe, the substrate processing method according to any one of claims 1 3-20.

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