TWI528436B - Acoustic energy system, method and apparatus for processing flat articles - Google Patents

Acoustic energy system, method and apparatus for processing flat articles Download PDF

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TWI528436B
TWI528436B TW096102102A TW96102102A TWI528436B TW I528436 B TWI528436 B TW I528436B TW 096102102 A TW096102102 A TW 096102102A TW 96102102 A TW96102102 A TW 96102102A TW I528436 B TWI528436 B TW I528436B
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flat object
emitter
liquid
converter assembly
transducer
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TW200741843A (en
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范尼 佩哲曼
寇柏勒 約翰
瑞勒 馬克
布朗 詹姆斯
哈薩克 查德
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安可龍科技有限公司
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用以處理平坦物體之聲波能量系統、方法及裝置Acoustic energy system, method and device for processing flat objects

本發明一般關於利用聲波能量處理平坦物體的領域,且具體來說關於利用聲波能量以清潔諸如導體晶圓之平坦物體的系統、方法及裝置。The present invention relates generally to the field of processing flat objects using sonic energy, and in particular to systems, methods and apparatus for utilizing acoustic energy to clean flat objects such as conductor wafers.

於半導體製造領域中,從產業的開端便已經認清在製程期間從半導體晶圓移除微粒係生產品質有利晶圓之一關鍵性必要條件。儘管多年來已研發出許多不同的系統及方法以從半導體晶圓移除微粒,然而許多此等系統及方法係不受歡迎的,因為它們會破壞該等晶圓。因此,從晶圓移除微粒(其經常係依據微粒移除效率(「PRE」)來測定)必須權衡由該清潔方法及/或系統對該等晶圓所導致之損壞的量。所以便希望一清潔方法或系統能夠在脫離該脆弱半導體晶圓之情況下破壞微粒,進而不會對該晶圓表面上之器件造成損壞。In the field of semiconductor manufacturing, it has been recognized from the beginning of the industry that it is a key requirement for the removal of the quality of wafers from semiconductor wafers during the manufacturing process. Although many different systems and methods have been developed over the years to remove particles from semiconductor wafers, many such systems and methods are undesirable because they can destroy such wafers. Therefore, the removal of particles from the wafer, which is often measured in terms of particle removal efficiency ("PRE"), must weigh the amount of damage caused by the cleaning method and/or system to the wafer. It is desirable to have a cleaning method or system capable of damaging the particles away from the fragile semiconductor wafer without causing damage to the device on the wafer surface.

使該等微粒從一半導體晶圓之表面脫離的現存技術利用化學與機械程序的組合。本技術中所使用的一種典型清潔化學係標準清潔1(「SC1」),其係氫氧化銨、過氧化氫、與水之混合物。SC1會氧化並蝕刻該晶圓之表面。此蝕刻程序(已知為基蝕)會減少該微粒所黏結之晶圓表面的實體接觸面積,因而使移除較為容易。然而,仍需要一機械程序以從該晶圓表面實際移除該微粒。Existing techniques for detaching such particles from the surface of a semiconductor wafer utilize a combination of chemical and mechanical procedures. A typical cleaning chemistry standard cleansing 1 ("SC1") used in the art is a mixture of ammonium hydroxide, hydrogen peroxide, and water. SC1 oxidizes and etches the surface of the wafer. This etching process (known as base etching) reduces the physical contact area of the wafer surface to which the particles are bonded, thus making removal easier. However, a mechanical procedure is still needed to actually remove the particles from the wafer surface.

針對較大微粒及針對較大器件,歷史上運用洗滌器來將微粒物理刷離該晶圓表面。然而,隨著器件之尺寸縮小,洗滌器與其他形式之物理清潔遂變得不適當,因為它們與該等晶圓的實體接觸開始會對該等較小/小型化器件造成巨大的損壞。For larger particles and for larger devices, scrubbers have historically been used to physically sweep particles away from the wafer surface. However, as device sizes shrink, scrubbers and other forms of physical cleaning defects become inadequate because their physical contact with the wafers begins to cause significant damage to such smaller/miniaturized devices.

近來,在化學處理期間對該等晶圓施加音波/聲波能量來實行微粒移除已然取代物理洗滌。於本申請案之全部交替使用該等術語「聲波」與「音波」。於基板處理中所使用之聲波能量係經由一聲波能量來源產生,該聲波能量來源一般包含一曲壓電晶體製成的轉換器。操作時,該轉換器係耦合至一電源(即,一電能量來源)。對該轉換器供應一電能量信號(即,電)。該轉換器會將此電能量信號轉換成振動機械能量(即,音波/聲波能量),其隨後係傳輸至所處理之該(等)基板。從該電源供應至該轉換器之電能量信號(其通常係正弦波形)的特性支配由該轉換器所產生之聲波能量的特性。例如,提升該電能量信號的頻率及/或功率將提升由該轉換器所產生之聲波能量的頻率及/或功率。Recently, the application of sonic/sonic energy to the wafers during chemical processing to effect particle removal has replaced physical washing. The terms "sound wave" and "sound wave" are used interchangeably throughout this application. The acoustic energy used in the substrate processing is generated via a source of acoustic energy, which typically comprises a transducer made of a piezoelectric crystal. In operation, the converter is coupled to a power source (ie, an electrical energy source). An electrical energy signal (ie, electricity) is supplied to the converter. The converter converts this electrical energy signal into vibrating mechanical energy (i.e., sonic/sonic energy) which is then transmitted to the processed substrate. The characteristics of the electrical energy signal (which is typically a sinusoidal waveform) supplied from the power source to the converter govern the characteristics of the acoustic energy produced by the converter. For example, increasing the frequency and/or power of the electrical energy signal will increase the frequency and/or power of the acoustic energy generated by the transducer.

利用聲波能量之晶圓清潔隨時間而在半導體濕式處理應用中成為最有效的微粒移除方法。經證實聲波能量係能移除微粒之一有效方式,然而如同任何機械程序一般,可能會造成損壞且聲波清潔面臨與傳統物理清潔方法及裝置相同的損壞問題。在過去,利用聲波能量之清潔系統係經設計以成批處理半導體晶圓,一次通常清潔二十五個基板。批式清潔的好處隨著基板之尺寸與單一晶圓清潔系統之有效性的提升變得較不重要。每一半導體晶圓之價值愈大且該等器件之性質愈脆弱導致該產業朝單一晶圓處理裝備變革。Wafer cleaning with sonic energy becomes the most effective particle removal method in semiconductor wet processing applications over time. Acoustic energy has been shown to be an effective way to remove particles, however, as with any mechanical procedure, damage can occur and sonic cleaning faces the same damage problems as conventional physical cleaning methods and devices. In the past, cleaning systems using sonic energy were designed to batch process semiconductor wafers, typically cleaning twenty-five substrates at a time. The benefits of batch cleaning become less important as the size of the substrate and the effectiveness of a single wafer cleaning system increase. The greater the value of each semiconductor wafer and the fragile nature of these devices, the industry's transformation toward single wafer processing equipment.

於2000年3月21日所發佈之美國專利案6,039,059(「Bran」)與2006年9月5日所發佈之美國專利案7,1003,304(「Lauerhaas等人」)中揭示一種利用超音波能量之單一晶圓清潔系統的一項範例,該等美國專利案之全部係以提及方式併入本文。為美國專利案6,039,059與美國專利案7,1003,304之主題的單一晶圓清潔系統係由Pennsylvania,Allentown之Akrion公司以「Goldfinger」的名稱來供應市場。於2006年12月5日所發佈之美國專利案7,145,286(「Beck等人」)、2003年4月1日所發佈之美國專利案6,539,952(「Itzkowitz」)與2006年12月14日所發表之美國專利申請公開案2006/0278253(「Verhaverbeke等人」)中揭示多種利用聲波能量之單一晶圓清潔器的其他範例。於諸如上述之多種單一晶圓聲波清潔系統中,以水平定向支撐並旋轉一半導體晶圓,同時並對該晶圓之一或兩側/表面施加一液體薄膜。一轉換器裝配件之位置係鄰近該晶圓表面中的一者,使得該轉換器裝配件之一發射器部分係接觸該液體薄膜之液體彎月面。於旋轉該晶圓期間致動該轉換器裝配件,從而使該晶圓經受由該轉換器裝配件所產生的聲波能量。U.S. Patent No. 6,039,059 ("Bran") issued on March 21, 2000, and U.S. Patent No. 7,1003,304 ("Lauerhaas et al." issued on Sep. 5, 2006, discloses the use of an ultrasonic wave. An example of a single wafer cleaning system for energy is incorporated herein by reference in its entirety. A single wafer cleaning system for the subject of U.S. Patent No. 6,039,059 and U.S. Patent No. 7,1003,304 is owned by Akrion of Allentown, Pennsylvania as "Goldfinger". The name comes to the market. U.S. Patent No. 7,145,286 ("Beck et al.") issued on December 5, 2006, and U.S. Patent No. 6,539,952 ("Itzkowitz") issued on April 1, 2003, and published on December 14, 2006. Other examples of a single wafer cleaner utilizing sonic energy are disclosed in U.S. Patent Application Publication No. 2006/0278253 ("Verhaverbeke et al."). In a plurality of single wafer sonic cleaning systems such as those described above, a semiconductor wafer is supported and rotated in a horizontal orientation while a liquid film is applied to one or both sides/surfaces of the wafer. A transducer assembly is positioned adjacent one of the wafer surfaces such that one of the transducer assemblies contacts the liquid meniscus of the liquid film. The converter assembly is actuated during rotation of the wafer to subject the wafer to sonic energy generated by the converter assembly.

但是,該產業之變革成100 nm以下的器件已為半導體處理裝備製造商帶來額外的挑戰。該清潔程序並無不同。由於該等器件變得愈來愈小型化,故而清潔之需求亦漸形重要且迫切。在處理縮小尺寸之器件時,一污染物之尺寸相較於一器件之尺寸的比率係較大,並使得一受污染之器件將無法適切作用之可能性提升。因此,便需要漸形迫切的清潔及PRE需求。因此,高度需要會減小晶圓生產期間出現之污染物量與尺寸的經改良半導體晶圓處理技術。However, the transformation of the industry into devices below 100 nm has created additional challenges for semiconductor processing equipment manufacturers. The cleaning procedure is no different. As these devices become more and more miniaturized, the need for cleaning is becoming increasingly important and urgent. When processing a reduced size device, the ratio of the size of a contaminant to the size of a device is large, and the likelihood that a contaminated device will not function properly will increase. Therefore, there is a need for progressive cleaning and PRE requirements. Therefore, there is a high need for improved semiconductor wafer processing techniques that reduce the amount and size of contaminants that occur during wafer production.

由於此等漸形迫切的清潔及PRE需求,本案發明者因而發現從該晶圓之兩側/表面移除微粒在達到高產量上扮演著一漸形重要的角色。於現有的單一晶圓系統中,在一清潔循環期間從該半導體晶圓之兩表面移除微粒係藉由鄰近該晶圓之表面中的一者提供一單一轉換器裝配件而達成。此轉換器裝配件係於一足夠的功率位準下操作,使得所產生之聲波能量會通過該晶圓本身以使該晶圓之相對表面上的微粒鬆脫。此基本概念係美國專利案6,039,059之主題發明中的一者。於美國專利申請公開案2006/0278253(「Verhaverbeke等人」)中所揭示之系統中亦利用並仿效此兩側清潔概念,其中該轉換器裝配件之位置係鄰近該晶圓之背側。Due to these gradual pressing cleaning and PRE requirements, the inventors of the present invention have found that removing particles from the sides/surface of the wafer plays a progressively important role in achieving high throughput. In existing single wafer systems, the removal of particles from both surfaces of the semiconductor wafer during a cleaning cycle is achieved by providing a single converter assembly adjacent one of the surfaces of the wafer. The converter assembly operates at a sufficient power level such that the generated acoustic energy passes through the wafer itself to release particles from the opposing surfaces of the wafer. This basic concept is one of the subject inventions of U.S. Patent No. 6,039,059. The two-sided cleaning concept is also utilized and emulated in the system disclosed in U.S. Patent Application Publication No. 2006/0278253 ("Verhaverbeke et al."), the location of which is adjacent to the back side of the wafer.

儘管單一晶圓系統及方法的此等進展能夠清潔該晶圓之兩側,然而仍對單一晶圓系統能夠在最小化器件損壞的情況下達成改良之PRE存在一需要。此外,器件的持續小型化持續使現有清潔系統能夠在高度PRE與最小化器件損壞之間達成一可接受的平衡。While such advances in single wafer systems and methods are capable of cleaning both sides of the wafer, there is still a need for a single wafer system that can achieve improved PRE with minimal device damage. In addition, continued miniaturization of devices continues to enable existing cleaning systems to achieve an acceptable balance between high PRE and minimal device damage.

因此本發明之一目的係提供一種用以利用聲波能量來處理諸如半導體晶圓之平坦物體的系統、裝置及方法。It is therefore an object of the present invention to provide a system, apparatus and method for processing flat objects such as semiconductor wafers using acoustic energy.

本發明之另一目的係提供一種利用聲波能量用以同時清潔諸如半導體晶圓之平坦物體之兩表面的系統、裝置及方法。Another object of the present invention is to provide a system, apparatus and method for utilizing acoustic energy to simultaneously clean both surfaces of a flat object such as a semiconductor wafer.

本發明之又另一目的係提供一種利用聲波能量用以同時清潔諸如半導體晶圓之平坦物體之兩表面以改善PRE及/或減少對該平坦物體之損壞的系統、裝置及方法。Still another object of the present invention is to provide a system, apparatus and method for utilizing acoustic energy to simultaneously clean both surfaces of a flat object such as a semiconductor wafer to improve PRE and/or reduce damage to the flat object.

本發明又另一目的係提供一種用以對一旋轉平坦物體之底表面施加聲波能量的系統、裝置及方法。Yet another object of the present invention is to provide a system, apparatus and method for applying acoustic energy to a bottom surface of a rotating flat object.

本發明之一另一目的係提供一種利用聲波能量反射用以同時清潔諸如半導體晶圓之平坦物體之兩表面的系統、裝置及方法。Another object of the present invention is to provide a system, apparatus and method for simultaneously cleaning both surfaces of a flat object such as a semiconductor wafer using acoustic energy reflection.

本發明之一又另一目的係提供一種使現有單一晶圓清潔器能經回覆適配而達成改善對該晶圓之兩表面之清潔的裝置及方法。Still another object of the present invention is to provide an apparatus and method for enabling existing single wafer cleaners to be retrofitted to achieve improved cleaning of both surfaces of the wafer.

本發明又另一目的係提供一種達成提升一轉換器裝配件與一平坦物體底表面間之液體耦合的系統、裝置及方法。Still another object of the present invention is to provide a system, apparatus and method for achieving a liquid coupling between a converter assembly and a bottom surface of a flat object.

本發明又另一目的係提供一種提升一單一晶圓清潔系統之背側微粒移除效率而不會增加對位於該晶圓頂側上之器件之破壞的系統、裝置及方法。Yet another object of the present invention is to provide a system, apparatus and method for enhancing the backside particle removal efficiency of a single wafer cleaning system without increasing damage to devices located on the top side of the wafer.

本發明又另一目的係提供一種用以對一平坦物體之背側施加超音波能量的系統、裝置及方法。Yet another object of the present invention is to provide a system, apparatus and method for applying ultrasonic energy to the back side of a flat object.

本發明滿足此等及其他目的,於本發明之一項具體實施例中可為一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以支撐一平坦物體;一第一分注器,其用以將液體施加至該可旋轉支架上之一平坦物體的一第一表面;一第二分注器,其用以將液體施加至該可旋轉支架上之一平坦物體的一第二表面;一第一轉換器裝配件,其包含用以產生聲波能量之一第一轉換器與聲波耦合至該第一轉換器之一第一發射器,該第一轉換器裝配件經定位使得在該第一分注器將液體施加至該可旋轉支架上之一平坦物體的該第一表面時,於該第一發射器之一部分與該平坦物體之該第一表面間形成一第一液體彎月面;以及一第二轉換器裝配件,其包含用以產生聲波能量之一第二轉換器與聲波耦合至該第二轉換器之一第二發射器,該第二轉換器裝配件經定位使得在該第二分注器將液體施加至該可旋轉支架上之該平坦物體的該第二表面時,於該第二發射器之一部分與該平坦物體之該第二表面間形成一第二液體彎月面。The present invention satisfies these and other objects. In one embodiment of the present invention, a system for processing a flat object includes: a rotatable bracket for supporting a flat object; a first point An injector for applying a liquid to a first surface of a flat object on the rotatable support; a second dispenser for applying a liquid to one of the flat objects on the rotatable support a second surface; a first converter assembly comprising a first transducer and acoustic wave coupled to one of the first transducers for generating acoustic energy, the first transducer assembly being positioned Causing a first portion between a portion of the first emitter and the first surface of the planar object when the first dispenser applies liquid to the first surface of one of the flat objects on the rotatable mount a liquid meniscus; and a second converter assembly including a second transducer for generating sound energy and a second wave of sound waves coupled to the second transducer, the second transducer assembly Positioned so that Second Dispenser applying liquid to the second surface of the rotatable body on the flat of the stent, to the emitter of the second portion is formed with a second liquid meniscus between the second surface of the planar object.

於另一具體實施例中,本發明可為一種用以清潔平坦物體的系統,其包含:一可旋轉支架,其用以支撐一平坦物體;一第一轉換器裝配件,其包含一第一轉換器與聲波耦合至該第一轉換器之一第一發射器,該第一轉換器裝配件經定位使得於該第一發射器之一部分與該可旋轉支架之一平坦物體之一第一表面間存在一第一小間隙,而在將液體施加至該第一表面時,於該第一發射器之該部分與該平坦物體之該第一表面間形成一第一液體彎月面;以及一第二轉換器裝配件,其包含一第二轉換器與聲波耦合至該第二轉換器之一第二發射器,該第二轉換器裝配件經定位使得於該第二發射器之一部分與該可旋轉支架之該平坦物體之一第二表面間存在一第二小間隙,而在將液體施加至該第二表面時,於該第二發射器之該部分與該第二表面間形成一第二液體彎月面。In another embodiment, the present invention can be a system for cleaning a flat object, comprising: a rotatable support for supporting a flat object; a first converter assembly including a first a transducer and acoustic wave coupled to the first emitter of the first transducer, the first transducer assembly being positioned such that one of the first emitter and a first surface of one of the rotatable brackets are flat objects There is a first small gap therebetween, and when a liquid is applied to the first surface, a first liquid meniscus is formed between the portion of the first emitter and the first surface of the flat object; and a second converter assembly including a second transducer and acoustic wave coupled to one of the second transducers, the second transducer assembly being positioned such that one of the second emitters is a second small gap exists between the second surface of the flat object of the rotatable bracket, and a portion is formed between the portion of the second emitter and the second surface when the liquid is applied to the second surface Two liquid meniscus.

於又另一具體實施例中,本發明可為一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以在一實質上水平之定向上支撐並旋轉一平坦物體;一轉換器裝配件,其包含用以產生聲波能量之一轉換器、聲波耦合至該第一轉換器之一發射器與環繞該發射器之一周邊的至少一部分之一壩,使得在該發射器與該壩之間能夠形成一液體保持通道;以及該轉換器裝配件經定位使得該發射器之部分係鄰近該可旋轉支架上之一平坦物體之一底表面,使得在將液體施加至該平坦物體之該底表面時,於該發射器之該部分與該平坦物體之該底表面間形成一液體彎月面。In still another embodiment, the present invention can be a system for processing a flat object, comprising: a rotatable mount for supporting and rotating a flat object in a substantially horizontal orientation; a shank comprising a transducer for generating acoustic energy, a sound wave coupled to one of the first transducer, and a dam surrounding at least a portion of one of the emitters, such that the emitter and the dam A liquid retaining passage can be formed between the dams; and the converter assembly is positioned such that a portion of the emitter is adjacent a bottom surface of one of the flat objects on the rotatable mount such that a liquid is applied to the flat object The bottom surface forms a liquid meniscus between the portion of the emitter and the bottom surface of the planar object.

於又另一具體實施例中,本發明可為一種用以安裝於一平坦物體之一底表面下的轉換器裝配件,其包含:一轉換器,其用以產生聲波能量;一發射器,其聲波耦合至該第一轉換器;以及一壩,其環繞該發射器之一周邊的至少一部分,使得在該第二發射器與該壩之間能夠形成一液體保持通道。In still another embodiment, the present invention can be a converter assembly for mounting under a bottom surface of a flat object, comprising: a converter for generating sonic energy; a transmitter, An acoustic wave is coupled to the first converter; and a dam surrounding at least a portion of a periphery of the emitter such that a liquid retention channel can be formed between the second emitter and the dam.

於一另一具體實施例中,本發明可為一種製造一轉換器裝配件的方法,其包含:提供一並排圓柱形發射器板;將一或多個轉換器接合至該發射器板之一凸面內表面;將一外殼連接至該發射器以產生具有該一或多個轉換器係位於其中之一實質封閉腔的裝配件;以及以一惰性非反應性塑膠封裝該裝配件。In another embodiment, the invention can be a method of making a converter assembly comprising: providing a side-by-side cylindrical emitter plate; joining one or more transducers to the emitter plate a convex inner surface; an outer casing coupled to the emitter to produce a fitting having the one or more converters in one of the substantially closed cavities; and the assembly encapsulated in an inert, non-reactive plastic.

於一又另一之具體實施例中,本發明可為一種處理一平坦物體的方法,其包含:a)於一氣體環境內以一實質上水平之定向支撐一平坦物體,該平坦物體具有一底表面與一頂表面;b)旋轉該平坦物體同時並維持該實質上水平之定向;c)將一液體薄膜施加至該平坦物體之該頂表面;d)於該平坦物體之該底表面上施加一液體薄膜;e)經由包含一第一轉換器與一第一發射器之一第一轉換器裝配件將聲波能量應用至該平坦物體之該頂表面,該第一發射器之一部分於該平坦物體之該頂表面上接觸該液體薄膜;以及f)經由包含一第二轉換器與一第二發射器之一第二轉換器裝配件將聲波能量應用至該平坦物體之該底表面,該第二發射器之一部分於該平坦物體之該底表面上接觸該液體薄膜。In one embodiment, the present invention can be a method of processing a flat object comprising: a) supporting a flat object in a substantially horizontal orientation within a gaseous environment, the flat object having a a bottom surface and a top surface; b) rotating the flat object while maintaining the substantially horizontal orientation; c) applying a liquid film to the top surface of the flat object; d) on the bottom surface of the flat object Applying a liquid film; e) applying acoustic energy to the top surface of the flat object via a first transducer assembly including a first transducer and a first emitter, one of the first emitters being Contacting the liquid film on the top surface of the flat object; and f) applying sonic energy to the bottom surface of the flat object via a second transducer assembly including a second transducer and a second emitter, One of the second emitters partially contacts the liquid film on the bottom surface of the flat object.

於一又另一之具體實施例中,本發明可為一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以在一實質上水平之定向上支撐一平坦物體;一轉換器裝配件,其包含用以產生聲波能量之一轉換器與聲波耦合至該轉換器之一發射器,該轉換器裝配件經定位使得該發射器之一部分係鄰近該支架上之一平坦物體之一頂表面,使得在將液體施加至該頂表面時於該發射器之該部分與該頂表面間形成一第一液體彎月面;以及一反射部件,其經定位使得該反射部件之一部分係鄰近該支架上之一平坦物體之一底表面,使得在將液體施加至該底表面時於該反射部件之一部分與該底表面間形成一第二液體彎月面;以及該反射部件,其經定位使得由該第一轉換器裝配件產生且會通過該平坦物體之聲波能量的至少一分率係朝向該平坦物體之該底表面反射回。In another embodiment, the present invention can be a system for processing a flat object, comprising: a rotatable mount for supporting a flat object in a substantially horizontal orientation; a device assembly comprising a transducer for generating acoustic energy and acoustic waves coupled to one of the transducers, the transducer assembly being positioned such that a portion of the emitter is adjacent to a flat object on the support a top surface such that a first liquid meniscus is formed between the portion of the emitter and the top surface when liquid is applied to the top surface; and a reflective member positioned such that one of the reflective members is partially Adjacent to a bottom surface of one of the flat objects on the bracket such that a second liquid meniscus is formed between a portion of the reflective member and the bottom surface when liquid is applied to the bottom surface; and the reflective member Positioning causes at least a fraction of the acoustic energy generated by the first transducer assembly and passing through the flat object to be reflected back toward the bottom surface of the planar object.

於又另一具體實施例中,本發明可為一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以於一氣體環境中支撐一平坦物體;一轉換器裝配件,其包含一轉換器與接合至該轉換器之一發射器,該轉換器裝配件經定位使得於該發射器之一部分與該支架上之一平坦物體之一第一表面間存在一第一小間隙,使得在將液體施加至該平坦物體之該第一表面時,於該發射器之該部分與該平坦物體之該第一表面間形成一第一液體彎月面;一反射部件,其經定位使得於該反射部件之一部分與該支架上之一平坦物體之一第二表面間存在一第二小間隙,使得在將液體施加至該平坦物體之該第二表面時,於該反射部件之該部分與該平坦物體之該第二表面間形成一第二液體彎月面;以及該反射部件,其經定位使得由該第一轉換器裝配件產生且會通過該平坦物體之聲波能量的至少一分率係朝向該平坦物體之該第二表面而由該反射器部件反射回。In still another embodiment, the present invention can be a system for processing a flat object, comprising: a rotatable support for supporting a flat object in a gaseous environment; a converter assembly, A transducer and a transmitter coupled to the transducer, the transducer assembly being positioned such that a first small gap exists between a portion of the emitter and a first surface of one of the planar objects on the support, Having a first liquid meniscus formed between the portion of the emitter and the first surface of the planar object when a liquid is applied to the first surface of the planar object; a reflective member positioned such that There is a second small gap between a portion of the reflective member and a second surface of one of the planar objects on the support such that when liquid is applied to the second surface of the planar object, the portion of the reflective member Forming a second liquid meniscus with the second surface of the flat object; and the reflective member positioned to be generated by the first transducer assembly and to pass the sound of the flat object To experience less of the energy of the system towards the second planar surface of the object is reflected by the back of the reflector member.

於另一具體實施例中,本發明可為一種處理平坦物體的方法,其包含:a)於一氣體環境內以一實質上水平之定向支撐一平坦物體,該平坦物體具有一底表面與一頂表面;b)旋轉該平坦物體同時並維持該實質上水平之定向;c)將一液體薄膜施加至該平坦物體之該頂表面;d)於該平坦物體之該底表面上施加一液體薄膜;e)經由包含一轉換器與一發射器之一轉換器裝配件將聲波能量應用至該平坦物體之該頂表面,該發射器之一部分於該平坦物體之該頂表面上接觸該液體薄膜;以及f)經由接觸該平坦物體之該底表面上之該液體薄膜的一反射部件朝向該平坦物體之該底表面將由該第一轉換器裝配件產生且會通過該平坦物體之聲波能量反射回。In another embodiment, the present invention can be a method of processing a flat object, comprising: a) supporting a flat object in a substantially horizontal orientation within a gaseous environment, the planar object having a bottom surface and a a top surface; b) rotating the flat object while maintaining the substantially horizontal orientation; c) applying a liquid film to the top surface of the flat object; d) applying a liquid film to the bottom surface of the flat object e) applying sonic energy to the top surface of the flat object via a converter assembly comprising a converter and a transmitter, one of the emitters contacting the liquid film on the top surface of the flat object; And f) a reflective member that contacts the liquid film on the bottom surface of the flat object toward the bottom surface of the flat object to be generated by the first transducer assembly and reflected back by the sound energy of the flat object.

可特徵化本發明之此等及多種其他新穎優點及特徵係特別於隨附之申請專利範圍中指出並形成其之一部分。然而,為求能更佳瞭解該一般技術、其之優點、與因其之使用而獲得之目的,應參考形成一進一步之部分的該等圖式,並參考其中說明並描述本發明之一項較佳具體實施例之隨附說明性內容。These and various other novel advantages and features of the invention may be pointed out and formed in part in the appended claims. However, in order to better understand the general technique, its advantages, and the purpose for which it is obtained, reference should be made to the drawings which form a further portion, and with reference to the description and description thereof. The illustrative content of the preferred embodiment is provided.

首先參考圖1,根據本發明之一項具體實施例說明一聲波能量清潔系統1000(下文中稱為「清潔系統1000」)的示意。為便於討論,將就清潔半導體晶圓來討論該等圖式之本發明的系統與方法。然而,本發明並沒有因此而受到限制,並可用於任何平坦物體的任何所需濕式處理。Referring first to Figure 1, an illustration of an acoustic energy cleaning system 1000 (hereinafter referred to as "cleaning system 1000") is illustrated in accordance with an embodiment of the present invention. For ease of discussion, the systems and methods of the present invention will be discussed in terms of cleaning semiconductor wafers. However, the invention is not so limited and can be used for any desired wet processing of any flat object.

該清潔系統1000一般包含一頂轉換器裝配件200、底轉換器裝配件300與用以在一實質上水平之定向上支撐一半導體晶圓50的一可旋轉支架10。較佳地,支撐該半導體晶圓50使其之頂表面51係該晶圓50之器件側而該底表面52係該非器件側。當然,可視需要支撐該晶圓使得其之頂表面51係該非器件側而該底表面52係該器件側。The cleaning system 1000 generally includes a top converter assembly 200, a bottom converter assembly 300 and a rotatable mount 10 for supporting a semiconductor wafer 50 in a substantially horizontal orientation. Preferably, the semiconductor wafer 50 is supported such that its top surface 51 is the device side of the wafer 50 and the bottom surface 52 is the non-device side. Of course, the wafer may be supported as needed such that its top surface 51 is the non-device side and the bottom surface 52 is the device side.

該可旋轉支架10係經設計以在執行其之支撐功能時僅接觸並嚙合該基板50之一周圍。然而,該可旋轉支架10之結構的確切細節並不限制本發明,而可運用各式各樣的其他支撐結構,例如夾頭、支撐板等。此外,儘管該支架結構較佳地係以一實質上水平之定向支撐並旋轉該半導體晶圓,然而於本發明之其他具體實施例中,該系統可配置成以便能以其他定向支撐該半導體晶圓,例如垂直或成一角度。於此等具體實施例中,可在該系統中相對應地重新定位該清潔系統1000之剩餘組件(包括該等轉換裝配件200、300),因此能夠執行所希望之功能及/或相對於於該系統之其他組件的必要相對位置,如同下文中所討論一般。The rotatable mount 10 is designed to only contact and engage one of the sides of the substrate 50 when performing its supporting function. However, the exact details of the construction of the rotatable mount 10 do not limit the invention, but a wide variety of other support structures, such as collets, support plates, and the like, can be utilized. Moreover, while the stent structure preferably supports and rotates the semiconductor wafer in a substantially horizontal orientation, in other embodiments of the invention, the system can be configured to support the semiconductor crystal in other orientations. A circle, such as vertical or at an angle. In these particular embodiments, the remaining components of the cleaning system 1000 (including the conversion assemblies 200, 300) can be correspondingly repositioned in the system, thereby enabling the desired function to be performed and/or relative to The necessary relative positions of the other components of the system are as discussed below.

該旋轉支架10係操作耦合至一馬達11以促使該晶圓50於支撐的水平平面內旋轉。該馬達11較佳地係一可變速度馬達,其可以任何所需旋轉速度ω來旋轉該支架10。該馬達11係電及操作耦合至該控制器12。該控制器12會控制該馬達11之操作,並確保達成所需的旋轉速度ω與所需的旋轉持續時間。The swivel mount 10 is operatively coupled to a motor 11 to cause the wafer 50 to rotate in a horizontal plane of support. The motor 11 is preferably a variable speed motor that can rotate the bracket 10 at any desired rotational speed ω. The motor 11 is electrically and operatively coupled to the controller 12. The controller 12 controls the operation of the motor 11 and ensures that the desired rotational speed ω is achieved with the desired rotational duration.

該清潔系統1000進一步包含一頂分注器13與一底分注器14。該頂分注器13與該底分注器14二者皆經由液體供應線17、18操作及流體耦合至一液體供應子系統16。該液體供應子系統16依次係流體連接至該液體儲存器15。該液體供應子系統16會控制對該頂分注器13與該底分注器14二者的液體供應。The cleaning system 1000 further includes a top dispenser 13 and a bottom dispenser 14. Both the top dispenser 13 and the bottom dispenser 14 are operated and fluidly coupled to a liquid supply subsystem 16 via liquid supply lines 17, 18. The liquid supply subsystem 16 is in turn fluidly coupled to the liquid reservoir 15. The liquid supply subsystem 16 controls the supply of liquid to both the top dispenser 13 and the bottom dispenser 14.

該液體供應子系統16(其為求簡明之目的係經示意性說明成一方塊)包含所有必要之幫浦、閥、導管、連接器與感應器之所需配置,以便能控制該液體在整個清潔系統1000中的流動與傳輸。該液體流動的方向係以該等供應線17、18上之箭頭來表示。該等熟悉本技術人士將明白,該液體供應子系統16之各種組件的存在、定位與功能將依據該清潔系統1000之需要及於其上所必須實施之程序而有所不同,並據此可加以調整。該液體供應子系統16之組件係操作連接至該控制器12並由該控制器12加以控制。The liquid supply subsystem 16 (which is schematically illustrated as a block for the sake of brevity) contains all the necessary configurations of pumps, valves, conduits, connectors and inductors to control the cleaning of the liquid throughout Flow and transmission in system 1000. The direction of flow of the liquid is indicated by the arrows on the supply lines 17, 18. Those skilled in the art will appreciate that the presence, location and function of the various components of the liquid supply subsystem 16 will vary depending on the needs of the cleaning system 1000 and the procedures that must be implemented thereon, and accordingly Adjust it. The components of the liquid supply subsystem 16 are operatively coupled to and controlled by the controller 12.

該液體儲存器15會容納欲供應至該晶圓50所需之液體以用於欲實施之處理。就清潔系統1000而言,該液體儲存器15會容納一清潔液體,如例如去離子水(「DIW」)、標準清潔1(「SC1」)、標準清潔2(「SC2」)、臭氧去離子水(「DIO3 」)、蒸餾或超蒸餾化學藥品、及/或其之組合。如同本文中所使用,術語「液體」包括至少液體、液體-液體混合物與液體-氣體混合物。在某些情況下,亦可能將某些其他超臨界及/或密集流體視作液體。The liquid reservoir 15 will contain the liquid to be supplied to the wafer 50 for processing to be performed. In the case of the cleaning system 1000, the liquid reservoir 15 will contain a cleaning liquid such as, for example, deionized water ("DIW"), standard cleaning 1 ("SC1"), standard cleaning 2 ("SC2"), ozone deionization. Water ("DIO 3 "), distilled or super-distillated chemicals, and/or combinations thereof. As used herein, the term "liquid" includes at least a liquid, a liquid-liquid mixture, and a liquid-gas mixture. In some cases, it is also possible to treat certain other supercritical and/or dense fluids as liquids.

此外,可能具有多個液體儲存器。例如,於本發明之部分具體實施例中,該頂分注器13與該底分注器14可操作及流體耦合至不同的液體儲存器。此將使不同液體能夠視需要而施加至該晶圓50之底表面52與頂表面51。In addition, it is possible to have multiple liquid reservoirs. For example, in some embodiments of the invention, the top dispenser 13 and the bottom dispenser 14 are operatively and fluidly coupled to different liquid reservoirs. This will allow different liquids to be applied to the bottom surface 52 and top surface 51 of the wafer 50 as needed.

該清潔系統1000進一步包含一氣體供應子系統19,其係操作及流體耦合至一氣體來源20。該氣體供應子系統19係經由該氣體供應線21而操作及流體連接至該頂轉換器裝配件200並經由該氣體供應線22而操作及流體連接至該底轉換器裝配件300。該氣體供應子系統19(其為求簡明之目的係經示意性說明成一方塊)包含全部必要之幫浦、閥、導管、連接器與感應器的所需配置,以便能控制該氣體在整個清潔系統1000中的流動與傳輸。該氣體流動的方向係以該等供應線21、22上之箭頭來表示。該等熟悉本技術人士將明白,該氣體供應子系統19之各種組件的存在、定位與功能將依據該清潔系統1000之需要及於其上所必須實施之程序而有所不同,並據此可加以調整。該氣體供應子系統19之組件係操作連接至該控制器12並由該控制器12加以控制。因此,從該氣體供應子系統19之氣體傳輸係根據從該控制器12所接收之信號。The cleaning system 1000 further includes a gas supply subsystem 19 that is operationally and fluidly coupled to a source of gas 20. The gas supply subsystem 19 is operated and fluidly coupled to the top converter assembly 200 via the gas supply line 21 and is operatively and fluidly coupled to the bottom converter assembly 300 via the gas supply line 22 . The gas supply subsystem 19 (which is schematically illustrated in a block for the sake of brevity) contains all the necessary configurations of pumps, valves, conduits, connectors and inductors to control the gas throughout the cleaning process. Flow and transmission in system 1000. The direction of flow of the gas is indicated by the arrows on the supply lines 21, 22. Those skilled in the art will appreciate that the presence, location, and function of the various components of the gas supply subsystem 19 will vary depending on the needs of the cleaning system 1000 and the procedures that must be implemented thereon, and Adjust it. The components of the gas supply subsystem 19 are operatively coupled to and controlled by the controller 12. Therefore, the gas transmission from the gas supply subsystem 19 is based on signals received from the controller 12.

如同於下文中將更詳細地加以說明,該氣體係供應至該等頂及底轉換器裝配件200、300以對該等裝配件200、300中之轉換器提供冷卻及/或淨化,進而將該電能量轉換成該聲波能量。該氣體來源15較佳地會容納一惰性氣體,例如氮、氦、二氧化碳等。然而,本發明並不限於使用任何特定的氣體。此外,如同該等液體之情況一般,可能具有多個氣體來源。例如,於本發明之部分具體實施例中,該頂轉換器裝配件200與該底轉換器裝配件300可操作及流體耦合至不同的氣體儲存器。此將允許依所需而施加不同氣體。As will be explained in more detail below, the gas system is supplied to the top and bottom converter assemblies 200, 300 to provide cooling and/or purification to the converters in the assemblies 200, 300, and The electrical energy is converted into the acoustic energy. The gas source 15 preferably contains an inert gas such as nitrogen, helium, carbon dioxide or the like. However, the invention is not limited to the use of any particular gas. Furthermore, as is the case with such liquids, it is possible to have multiple sources of gas. For example, in some embodiments of the invention, the top converter assembly 200 and the bottom converter assembly 300 are operatively and fluidly coupled to different gas reservoirs. This will allow different gases to be applied as needed.

該清潔系統1000進一步包含操作耦合至該頂轉換器裝配件200之一水平致動器250與操作耦合至該底轉換器裝配件300之一垂直致動器350。該等致動器250、350係操作耦合至該控制器12並由該控制器12加以控制。該等致動器250、350可為氣動致動器、驅動裝配件致動器、或任何其他執行必要移動所需的型式。The cleaning system 1000 further includes a horizontal actuator 250 operatively coupled to the top converter assembly 200 and a vertical actuator 350 operatively coupled to the bottom converter assembly 300. The actuators 250, 350 are operatively coupled to and controlled by the controller 12. The actuators 250, 350 can be pneumatic actuators, drive assembly actuators, or any other type needed to perform the necessary movements.

該水平致動器250可在一縮回定位與一處理定位間水平轉移該頂轉換器裝配件200。若處於該縮回定位時,該頂轉換器裝配件200係充分抽回而遠離該可旋轉支架10,因而可在無阻礙的情況下將該晶圓50負載至該支架10上及從該支架10卸載該晶圓50。若處於該處理定位時,該頂轉換器裝配件200之至少一部分係與該晶圓之頂表面51間隔開,但充分靠近該晶圓之頂表面51,使得在對該晶圓50之頂表面51供應液體時,於該晶圓50之該頂表面51與該頂轉換器裝配件200之該部分間形成一液體彎月面。於圖1中,該頂轉換器裝配件200係處於該處理定位。The horizontal actuator 250 can horizontally transfer the top converter assembly 200 between a retracted position and a process position. If in the retracted position, the top converter assembly 200 is fully withdrawn away from the rotatable mount 10, so that the wafer 50 can be loaded onto and removed from the bracket 10 without hindrance. 10 Unload the wafer 50. If in the process of positioning, at least a portion of the top converter assembly 200 is spaced from the top surface 51 of the wafer, but sufficiently close to the top surface 51 of the wafer such that the top surface of the wafer 50 When the liquid is supplied 51, a liquid meniscus is formed between the top surface 51 of the wafer 50 and the portion of the top converter assembly 200. In Figure 1, the top converter assembly 200 is in the process position.

相似地,該垂直致動器350可在一縮回定位與一處理定位間垂直轉移該底轉換器裝配件300。就該底轉換器裝配件300而言,該縮回定位係可在無接觸該底轉換器裝配件300及/或干擾於該晶圓50之底表面52上可能實施並需要額外空間之其他程序的情況下安全地將該晶圓50負載至該支架10上的一降低定位。若該底轉換器裝配件300係處於其之處理定位時,則該底轉換器裝配件300之至少一部分係與該晶圓50之底表面52間隔開,但充分靠近該晶圓50之底表面52,使得在對該晶圓50之頂表面51供應液體時,於該晶圓50之該頂表面51與該頂轉換器裝配件200之該部分間形成一液體彎月面。於圖1中,該底轉換器裝配件300係處於該處理定位。Similarly, the vertical actuator 350 can vertically transfer the bottom converter assembly 300 between a retracted position and a process position. With respect to the bottom converter assembly 300, the retracted positioning system can be implemented without contact with the bottom converter assembly 300 and/or other programs that may interfere with the bottom surface 52 of the wafer 50 and require additional space. The wafer 50 is safely loaded to a reduced position on the support 10. If the bottom converter assembly 300 is in its process position, at least a portion of the bottom converter assembly 300 is spaced from the bottom surface 52 of the wafer 50, but sufficiently close to the bottom surface of the wafer 50. 52, such that when liquid is supplied to the top surface 51 of the wafer 50, a liquid meniscus is formed between the top surface 51 of the wafer 50 and the portion of the top converter assembly 200. In Figure 1, the bottom converter assembly 300 is in this process position.

儘管該等致動器200、300於系統1000中分別係例舉為水平及垂直致動器,然而於本發明之其他具體實施例中,可運用不同型式之致動器來取代每一者。例如,操作耦合至該底轉換器裝配件300之致動器可為一水平、垂直、角度轉移致動器或一可在樞軸上旋轉的致動器。就操作耦合至該頂轉換器裝配件200之致動器而言存在相同的選擇。Although the actuators 200, 300 are respectively illustrated as horizontal and vertical actuators in the system 1000, in other embodiments of the invention, different types of actuators may be employed in place of each. For example, the actuator operatively coupled to the bottom converter assembly 300 can be a horizontal, vertical, angular transfer actuator or a pivotally rotatable actuator. The same choice exists for operating an actuator coupled to the top converter assembly 200.

於該清潔系統1000中提供一定位感應器305,因而可有效地監視並控制該底轉換器裝配件300之定位。該定位感應器305會測量該底轉換器裝配件300與該晶圓50之該底表面52間的距離,使得於該等二者間可達成適切距離以執行該適切的處理間隙來形成該液體彎月面。該定位感應器305係操作及可相通耦合至該控制器12。更明確地說,該定位感應器305會產生一能指示所測得之距離的信號’並且會將此信號發射至該控制器12以供處理。儘管該感應器305係說明成連接至該底轉換器裝配件300,然而於該清潔系統1000中其可安裝於任意處,只要其能執行其之定位指示功能即可。A positioning sensor 305 is provided in the cleaning system 1000 so that the positioning of the bottom converter assembly 300 can be effectively monitored and controlled. The positioning sensor 305 measures the distance between the bottom converter assembly 300 and the bottom surface 52 of the wafer 50 such that a suitable distance between the two can be achieved to perform the appropriate processing gap to form the liquid. Meniscus. The positioning sensor 305 is operative and communicatively coupled to the controller 12. More specifically, the positioning sensor 305 generates a signal ' indicating the measured distance' and transmits this signal to the controller 12 for processing. Although the sensor 305 is illustrated as being coupled to the bottom converter assembly 300, it can be mounted anywhere in the cleaning system 1000 as long as it can perform its position indicating function.

該清潔系統1000亦包含一電能量信號來源23,其係操作耦合至該頂轉換器裝配件200與該底轉換器裝配件300。該電能量信號來源23會產生該電氣信號,其係發射至該頂轉換器裝配件200與該底轉換器裝配件300中的轉換器(稍後將加以討論)用以轉換成相對應的聲波能量。所需之電信號可取決於該等程序之需要而同時地、連續地及/或以一交替方式傳送至該等頂與底轉換器裝配件200、300。該電能量信號來源23係操作耦合至該控制器12並由該控制器12加以控制。因此,該控制器12將規定由該頂轉換器裝配件200與該底轉換器裝配件300產生之聲波能量的頻率、功率位準、與持續時間。較佳地,該電能量信號來源23係經控制使得由該頂轉換器裝配件200與該底轉換器裝配件300產生之聲波能量具有一於超音波範圍中的頻率。The cleaning system 1000 also includes an electrical energy signal source 23 operatively coupled to the top converter assembly 200 and the bottom converter assembly 300. The electrical energy signal source 23 generates the electrical signal that is transmitted to the top converter assembly 200 and the converter in the bottom converter assembly 300 (discussed later) for conversion to corresponding acoustic waves. energy. The desired electrical signals may be transmitted to the top and bottom converter assemblies 200, 300 simultaneously, continuously, and/or in an alternating manner depending on the needs of the programs. The source of electrical energy signals 23 is operatively coupled to and controlled by the controller 12. Thus, the controller 12 will specify the frequency, power level, and duration of the acoustic energy generated by the top converter assembly 200 and the bottom converter assembly 300. Preferably, the source of electrical energy signals 23 is controlled such that the acoustic energy generated by the top converter assembly 200 and the bottom converter assembly 300 has a frequency in the ultrasonic range.

根據系統需求,運用一單一電能量信號來控制該頂轉換器裝配件200與該底轉換器裝配件300二者可能並非所希望的。因此,於本發明之其他具體實施例中,可運用多個電能量信號來源,每一轉換器裝配件皆有一個電能量信號來源。Depending on system requirements, it may not be desirable to utilize a single electrical energy signal to control both the top converter assembly 200 and the bottom converter assembly 300. Thus, in other embodiments of the invention, multiple sources of electrical energy signals can be utilized, each having a source of electrical energy signals.

該控制器12可為一處理器,其可為一以適當微處理器為主之可程式邏輯控制器、個人電腦、或用於程序控制之類似物。該控制器12較佳地包括多個輸入/輸出埠,其用以對必須加以控制及/或相通之該清潔系統1000的多個組件提供連接。該電及/或相通連接於圖1中係以虛線來表示。該控制器12較佳地亦包含足夠的記憶體以儲存程序處方與其他資料,諸如由一處理器所輸入之臨界值、處理時間、旋轉速度、處理條件、處理溫度、流動速率、所需濃度、序列操作、與其類似物。該控制器12可與該清潔系統1000之多個組件相通,以視需要自動調整處理條件,諸如流動速率、旋轉速度、該清潔系統1000之組件的移動等。任何給出之系統所運用之系統控制器類型將根據所併入之系統的確切需要。The controller 12 can be a processor that can be a programmable logic controller, a personal computer, or the like for program control. The controller 12 preferably includes a plurality of input/output ports for providing connections to a plurality of components of the cleaning system 1000 that must be controlled and/or communicated. This electrical and/or intercommunication connection is indicated in Figure 1 by dashed lines. The controller 12 preferably also includes sufficient memory to store program prescriptions and other data, such as threshold values, processing time, rotational speed, processing conditions, processing temperature, flow rate, desired concentration input by a processor. , sequence operations, and the like. The controller 12 can be in communication with various components of the cleaning system 1000 to automatically adjust processing conditions, such as flow rate, rotational speed, movement of components of the cleaning system 1000, and the like, as desired. The type of system controller used in any given system will depend on the exact needs of the system being incorporated.

該頂分注器13係經定位及定向使得在一液體穿透其而流過時,該液體係施加至該基板50之該頂表面51。若該基板50係持續旋轉,則此液體會橫跨該基板50之該頂表面51的整體而形成一液體層或薄膜。相似地,該底分注器14係經定位及定向使得在一液體穿透其而流過時,該液體係施加至該基板50之該底表面52。若該基板50係持續旋轉,則此液體會橫跨該基板50之該底表面52的整體而形成一液體層或薄膜。The top dispenser 13 is positioned and oriented such that the liquid system is applied to the top surface 51 of the substrate 50 as a liquid flows therethrough. If the substrate 50 is continuously rotated, the liquid will form a liquid layer or film across the entirety of the top surface 51 of the substrate 50. Similarly, the bottom dispenser 14 is positioned and oriented such that the liquid system is applied to the bottom surface 52 of the substrate 50 as it flows therethrough. If the substrate 50 is continuously rotated, the liquid will form a liquid layer or film across the entirety of the bottom surface 52 of the substrate 50.

該頂轉換器裝配件200係經定位使得於該頂轉換器裝配件200之一部分與該晶圓50之該頂表面間存在一小間隙。此間隙係足夠小,使得在對該晶圓50之該頂表面51施加該液體時,一液體彎月面係於該晶圓50之該頂表面51與該頂轉換器裝配件200之該部分間形成。相似地,該底轉換器裝配件300係經定位使得於該底轉換器裝配件300之一部分與該晶圓50之該底表面52間存在一小間隙。此間隙係足夠小,使得在對該晶圓50之該底表面52施加該液體時,一液體彎月面係於該晶圓50之該底表面52與該底轉換器裝配件300之該部分間形成。該彎月面並不限於任何特定形狀。The top converter assembly 200 is positioned such that there is a small gap between a portion of the top converter assembly 200 and the top surface of the wafer 50. The gap is sufficiently small that a liquid meniscus is attached to the top surface 51 of the wafer 50 and the portion of the top converter assembly 200 when the liquid is applied to the top surface 51 of the wafer 50. Formed between. Similarly, the bottom converter assembly 300 is positioned such that there is a small gap between a portion of the bottom converter assembly 300 and the bottom surface 52 of the wafer 50. The gap is sufficiently small that a liquid meniscus is attached to the bottom surface 52 of the wafer 50 and the bottom converter assembly 300 when the liquid is applied to the bottom surface 52 of the wafer 50. Formed between. The meniscus is not limited to any particular shape.

如同將指明,該等頂及底轉換器裝配件200、300一般係說明成方塊。如此作法乃因本發明就其最廣義之觀念而言,針對該等轉換器裝配件200、300並不侷限於任何特定結構、形狀及/或裝配件配置。例如,於2000年3月21日所發佈之美國專利案6,039,059(「Bran」)、2006年12月5日所發佈之美國專利案7,145,286(「Beck等人」)、2003年4月1日所發佈之美國專利案6,539,952(「Itzkowitz」)、與2006年12月14日所發表之美國專利申請公開案2006/0278253(「Verhaverbeke等人」)中所揭示之轉換器裝配件中的任一者可用作該頂及/或底轉換器裝配件200、300。當然,可運用其他形式之轉換器裝配件,諸如該等具有對該晶圓之該表面支撐成一角度的一延長發射器桿的轉換器裝配件。As will be indicated, the top and bottom converter assemblies 200, 300 are generally illustrated as squares. Thus, the present invention is not limited to any particular configuration, shape, and/or assembly configuration for the converter assemblies 200, 300 in its broadest sense. For example, US Patent No. 6,039,059 ("Bran") issued on March 21, 2000, and US Patent 7, 148,286 ("Beck et al.") issued on December 5, 2006, April 1, 2003 Any one of the converter assemblies disclosed in U.S. Patent No. 6,539,952 ("Itzkowitz"), issued to U.S. Patent Application Publication No. 2006/0278253 ("Verhaverbeke et al." issued on Dec. 14, 2006). It can be used as the top and/or bottom converter assembly 200, 300. Of course, other forms of converter assemblies can be utilized, such as such converter assemblies having an elongated emitter rod that supports the surface of the wafer at an angle.

現參考圖2,說明該清潔系統1000之一較佳結構具體實施例。於圖2至14中使用相同編碼來表示圖1所示意說明組件的相對應結構顯示。Referring now to Figure 2, a preferred embodiment of the cleaning system 1000 is illustrated. The same code is used in Figures 2 through 14 to indicate the corresponding structural display of the components illustrated in Figure 1.

於圖2之清潔系統1000中,該頂轉換器裝配件200包含一延長之桿狀發射器201,其係聲波耦合至一位於外殼202內之轉換器203(圖3中可見)。此型式之延長桿狀發射器201的許多細節係於2004年2月3日所發佈之美國專利案6,684,891(「Bran」)與2005年3月17日所發佈之美國專利案6,892,738(「Bran等人」)中加以揭示,該等美國專利案之全部係以提及方式併入本文。該頂轉換器裝配件200係操作耦合至驅動裝配件/致動器250,其可使該桿狀發射器201於一縮回定位與一處理定位間移動。若該桿狀發射器201係處於該縮回定位,則該桿狀發射器201係位於該處理缽203之外側,使得一晶圓50可在無阻礙之情況下置放於該可旋轉支架10上。更加明確地說,該驅動裝配件250會透過該處理缽203之一側壁中的一開口抽回該桿狀發射器201。若處於該處理定位,則該桿狀發射器201係直接定位於該可旋轉支架10上之一晶圓50的該頂表面51之上。該桿狀發射器201於圖2中係處於該處理定位。In the cleaning system 1000 of FIG. 2, the top converter assembly 200 includes an elongated rod-shaped emitter 201 that is acoustically coupled to a transducer 203 (visible in FIG. 3) located within the outer casing 202. Many details of this type of extended rod-shaped emitter 201 are disclosed in U.S. Patent No. 6,684,891 ("Bran") issued on Feb. 3, 2004, and U.S. Patent No. 6,892,738 issued on March 17, 2005 ("Bran et al. It is to be noted that all of these U.S. patents are incorporated herein by reference. The top converter assembly 200 is operatively coupled to a drive assembly/actuator 250 that allows the rod emitter 201 to move between a retracted position and a process position. If the rod-shaped emitter 201 is in the retracted position, the rod-shaped emitter 201 is located on the outer side of the processing cassette 203 so that a wafer 50 can be placed on the rotatable holder 10 without hindrance. on. More specifically, the drive assembly 250 will withdraw the rod-shaped emitter 201 through an opening in one of the side walls of the process cartridge 203. If in the process of positioning, the rod-shaped emitter 201 is positioned directly above the top surface 51 of one of the wafers 50 on the rotatable mount 10. The rod-shaped emitter 201 is in this process position in FIG.

該底轉換器裝配件300係位於該處理缽203之底部而於該可旋轉支架10之下的一定位。該底轉換器裝配件300包含一壩301、一發射器302與一基底303。該底分注器14係位於該基板303本身內的複數個噴霧器之形式,而非一單一噴嘴分注器。The bottom converter assembly 300 is positioned at the bottom of the processing cassette 203 below the rotatable mount 10. The bottom converter assembly 300 includes a dam 301, a transmitter 302 and a substrate 303. The bottom dispenser 14 is in the form of a plurality of sprayers located within the substrate 303 itself rather than a single nozzle dispenser.

現參考圖3,可見該可旋轉支架10係位於該處理缽203內。該可旋轉支架10會在該處理缽203之氣體環境中以一實質上水平之定向支撐一晶圓50,該處理缽203環繞該晶圓50之周圍。該可旋轉支架10係操作連接至該馬達裝配件11。該馬達裝配件會使該晶圓沿該中央軸而旋轉。該馬達裝配件11可為一直接驅動馬達或一具有偏位皮帶/滑輪驅動器之軸承。Referring now to Figure 3, it can be seen that the rotatable mount 10 is located within the processing bowl 203. The rotatable mount 10 supports a wafer 50 in a substantially horizontal orientation in the gaseous environment of the processing cartridge 203, the processing cartridge 203 surrounding the wafer 50. The rotatable mount 10 is operatively coupled to the motor assembly 11. The motor assembly rotates the wafer along the central axis. The motor assembly 11 can be a direct drive motor or a bearing with a bias belt/pulley drive.

該可旋轉支架10會支撐該晶圓50於該頂轉換器裝配件200之延長桿狀發射器201與該底轉換器裝配件300之發射器302間的一提升定位。若該晶圓50係如此地加以支撐,則該頂轉換器裝配件200之發射器201會以一靠近的間隔關係於該晶圓50之該頂表面51上以一實質上平行之定向來延伸。相似地,該底轉換器裝配件300之該發射器302會以一靠近的間隔關係於該晶圓50之該底表面52下以一實質上平行之定向來延伸。當液體分別係從該等分注器13、14施加至該等頂與底表面51、52,液體彎月面分別係形成於該發射器201之一部分與該晶圓50之該頂表面51之間以及於該發射器302之一部分與該晶圓50之該底表面52之間時便具有此等靠近間隔之關係。The rotatable mount 10 supports a lifting position of the wafer 50 between the elongated rod emitter 201 of the top converter assembly 200 and the emitter 302 of the bottom converter assembly 300. If the wafer 50 is supported as such, the emitter 201 of the top converter assembly 200 will extend in a substantially parallel orientation on the top surface 51 of the wafer 50 in a closely spaced relationship. . Similarly, the emitter 302 of the bottom converter assembly 300 will extend in a substantially parallel orientation with respect to the bottom surface 52 of the wafer 50 in a closely spaced relationship. When liquid is applied from the dispensers 13, 14 to the top and bottom surfaces 51, 52, respectively, a liquid meniscus is formed in a portion of the emitter 201 and the top surface 51 of the wafer 50, respectively. There is such a close spacing relationship between a portion of the emitter 302 and the bottom surface 52 of the wafer 50.

該底轉換器裝配件300係操作連接至該升降器/致動器350。該升降器/致動器350可為一氣動升降器且亦可包含托架。該升降器350可在一處理定位與一縮回定位間使該底轉換器裝配件300移動。於圖3中,該底轉換器裝配件300係處於該處理定位,其係一升高之定位,其中該發射器302係處於上所討論之靠近間隔關係。當處於該縮回定位時,該底轉換器裝配件300係處於一降低定位,以確保該晶圓50於插至該可旋轉支架10之上的期間不會受到損壞。The bottom converter assembly 300 is operatively coupled to the elevator/actuator 350. The lifter/actuator 350 can be a pneumatic lifter and can also include a bracket. The lifter 350 moves the bottom converter assembly 300 between a process position and a retracted position. In FIG. 3, the bottom converter assembly 300 is in the process position, which is an elevated position, wherein the emitter 302 is in the close spaced relationship discussed above. When in the retracted position, the bottom converter assembly 300 is in a lowered position to ensure that the wafer 50 is not damaged during insertion onto the rotatable mount 10.

該等頂及底轉換器裝配件200、300之轉換器203、305分別係聲波耦合至該等發射器201、302。此可透過利用中間傳輸層之一直接接合或一間接接合而達成。該等轉換器203、305係操作耦合至一電能量信號之一來源。該等轉換器203、305可為一壓電陶瓷或晶體,如同本技術中所熟知。The converters 203, 305 of the top and bottom converter assemblies 200, 300 are acoustically coupled to the emitters 201, 302, respectively. This can be achieved by direct bonding or indirect bonding using one of the intermediate transport layers. The converters 203, 305 are operatively coupled to a source of an electrical energy signal. The converters 203, 305 can be a piezoelectric ceramic or crystal, as is well known in the art.

現同時參考圖4至7,該底轉換器裝配件300係說明成從該清潔系統1000移除下,因此可見其之細節。應瞭解,該底轉換器裝配件300就其本身而言係一新穎器件,其可構成本發明之一項具體實施例。Referring now to Figures 4 through 7, the bottom converter assembly 300 is illustrated as being removed from the cleaning system 1000, and thus details thereof can be seen. It will be appreciated that the bottom converter assembly 300 is, by itself, a novel device that may constitute a particular embodiment of the present invention.

該底轉換器裝配件300包含一基底結構303、一外殼304、一發射器302、一轉換器305與一壩301。該基底結構303較佳地係由PTFE或其他適切剛性之非污染材料所製成。該基底結構303具有一頂凸面表面,其一般具一並排球面形狀。該基底結構303會連接至並支撐該底轉換器裝配件300之剩餘組件。該基底結構303亦包含複數個液體分注孔/噴嘴14,其係經調適以在處理期間對一晶圓之該底表面供應一液體薄膜。該等孔/噴嘴14係位於該發射器302之兩側上沿著該發射器302之長度延伸之二分離列。The bottom converter assembly 300 includes a base structure 303, a housing 304, a transmitter 302, a converter 305 and a dam 301. The base structure 303 is preferably made of PTFE or other suitably rigid, non-contaminating material. The base structure 303 has a top convex surface which generally has a volleyball shape. The base structure 303 is coupled to and supports the remaining components of the bottom converter assembly 300. The base structure 303 also includes a plurality of liquid dispensing orifices/nozzles 14 that are adapted to supply a liquid film to the bottom surface of a wafer during processing. The apertures/nozzles 14 are located on opposite sides of the emitter 302 along two separate columns extending the length of the emitter 302.

該發射器302一般係一並排圓柱形狀之板,其具有一凸面外表面306與一凹面內表面307。然而,該發射器302可採各式各樣的其他形狀與尺寸。該發射器302可由任何傳輸由該轉換器305所產生之聲波能量的材料構成,其包括但不限於石英、藍寶石、氮化硼、塑膠、與金屬。一適當金屬係鋁。The emitter 302 is generally a side-by-side cylindrical shaped plate having a convex outer surface 306 and a concave inner surface 307. However, the launcher 302 can take a wide variety of other shapes and sizes. The transmitter 302 can be constructed of any material that transmits the acoustic energy generated by the converter 305, including but not limited to quartz, sapphire, boron nitride, plastic, and metal. A suitable metal is aluminum.

該發射器302之該外凸面表面會結束於一頂部313。因為該發射器302係一並排圓柱形狀,故而此頂部313(圖7)會沿著該發射器之長度形成一延長邊緣314。當然,如同本文中所使用的,術語延長邊緣並不限於一延長之弧形表面的頂部,而是亦包括,於其他東西之間,二表面的交會。此外,於其他具體實施例中,該發射器302本質上可為球面,因此該頂部可為一點。The outer convex surface of the emitter 302 will end at a top 313. Because the emitter 302 is in the form of a side-by-side cylindrical shape, the top portion 313 (Fig. 7) forms an elongated edge 314 along the length of the emitter. Of course, as used herein, the term extended edge is not limited to the top of an elongated curved surface, but rather includes, between other things, the intersection of the two surfaces. Moreover, in other embodiments, the emitter 302 can be spherical in nature, such that the top can be a point.

該轉換器305係一彎曲板,其具有一凸面上表面308與凹面下表面309。會將電能量轉換成聲波能量之轉換器的構造於本技術中係為一般所熟知。該轉換器之該凸面表面308具有一曲率,其會對應該內凹面表面307之曲率。該轉換器305係聲波耦合至該發射器302,使得由該轉換器305所產生之聲波能量會穿透該發射器302而傳播並到達該晶圓50。更加明確地說,該轉換器305之該凸面上表面308係接合至該發射器之該凹面內表面307。此接合可為該等表面307、308之間的一直接接合或可為利用中間傳輸層的一間接接合。於其他具體實施例中,該等轉換器可為平坦板或其他形狀。此外,儘管該底轉換器裝配件300係說明成利用一單一轉換器305,然而可視需要使用複數個轉換器來產生聲波能量。較佳地,該轉換器305係經調適以產生超聲波能量。The transducer 305 is a curved plate having a convex surface 308 and a concave lower surface 309. The construction of a converter that converts electrical energy into sonic energy is well known in the art. The convex surface 308 of the transducer has a curvature that corresponds to the curvature of the concave surface 307. The converter 305 is acoustically coupled to the transmitter 302 such that acoustic energy generated by the converter 305 propagates through the transmitter 302 and reaches the wafer 50. More specifically, the convex surface 308 of the transducer 305 is bonded to the concave inner surface 307 of the emitter. This bond may be a direct bond between the surfaces 307, 308 or may be an indirect bond using an intermediate transfer layer. In other embodiments, the converters can be flat plates or other shapes. Moreover, although the bottom converter assembly 300 is illustrated as utilizing a single converter 305, a plurality of converters can be used to generate sonic energy, as desired. Preferably, the converter 305 is adapted to generate ultrasonic energy.

該發射器302係連接至該外殼304,以便能形成該轉換器305係位於其中的一實質封閉空間310。可運用任何適當的構件來將該外殼304連接至該發射器302,包括黏著、熱焊接、扣件或一緊密結合裝配件。於該外殼304之底部部分提供複數個開口311。提供該等開口311以允許一氣體導入及/或導出該空間310,因此可冷卻及/或淨化該轉換器305。該等開口311如圖1所說明係操作連接至該氣體來源20。該外殼304亦包含一開口312,以允許該等電連接(即,線路),其係提供該轉換器305動力以便能進入該空間310所必須。此開口312亦可用以使該氣體能夠脫離該空間310。該外殼304可採各式各樣的形狀與結構,且並不受本發明之限制。於部分具體實施例中,該外殼可能僅為一板或其他簡易結構。The emitter 302 is coupled to the outer casing 304 to form a substantially enclosed space 310 in which the transducer 305 is located. The outer casing 304 can be attached to the emitter 302 using any suitable means, including adhesive, heat welded, fastener or a tightly bonded assembly. A plurality of openings 311 are provided in a bottom portion of the outer casing 304. The openings 311 are provided to allow a gas to be introduced and/or directed to the space 310 so that the converter 305 can be cooled and/or purified. The openings 311 are operatively coupled to the gas source 20 as illustrated in FIG. The housing 304 also includes an opening 312 to allow for electrical connections (i.e., wiring) that are necessary to provide power to the converter 305 for access to the space 310. This opening 312 can also be used to enable the gas to escape the space 310. The outer casing 304 can take a wide variety of shapes and configurations and is not limited by the invention. In some embodiments, the outer casing may be only a plate or other simple structure.

為能進一步保護該晶圓50免遭可能的污染,一旦該發射器302係連接至該外殼304,則該結合裝配件便利用一惰性無污染塑膠(諸如,鐵氟龍或其類似物)加以完全封裝。此亦用以保護該發射器302免遭化學侵襲。當該發射器302係如此地加以封裝及/或塗布時,該封裝及/或塗布係視為該發射器302之部分。To further protect the wafer 50 from possible contamination, once the emitter 302 is attached to the outer casing 304, the combination assembly is conveniently coated with an inert, non-contaminating plastic such as Teflon or the like. Fully packaged. This also serves to protect the transmitter 302 from chemical attack. When the emitter 302 is packaged and/or coated as such, the package and/or coating is considered part of the emitter 302.

僅參考圖4與7,該底發射器裝配件300進一步包含一壩301,其會環繞該發射器302之周圍/周邊。該壩301會形成一向上突起之脊部316,其具有一成角度之內表面317、一外表面318與一頂邊緣319。該壩301會在該發射器302之兩側上形成一液體保持通道315。更加明確地說,該脊部316之內表面317會與該發射器302一起形成一通道/溝槽。當然,於部分具體實施例中,可以其他方式及/或透過合併其他結構運用該壩301來形成該通道315。Referring only to Figures 4 and 7, the bottom emitter assembly 300 further includes a dam 301 that surrounds the periphery/periphery of the emitter 302. The dam 301 defines an upwardly projecting ridge 316 having an angled inner surface 317, an outer surface 318 and a top edge 319. The dam 301 will form a liquid retaining passage 315 on both sides of the launcher 302. More specifically, the inner surface 317 of the ridge 316 will form a channel/groove with the emitter 302. Of course, in some embodiments, the dam 301 can be used to form the channel 315 in other ways and/or by incorporating other structures.

該壩301係一矩形之框形結構,但仍可採其他形狀。該壩301亦不一定得環繞該發射器302之整體周圍,而是可視需要僅環繞一小部分。該壩301可由HDPE、PVDF、NPP或任何其他材料構成。較佳地,所選擇之材料係抗化學且機械穩定的。The dam 301 is a rectangular frame-shaped structure, but other shapes are still available. The dam 301 also does not have to surround the entire periphery of the emitter 302, but may only surround a small portion as desired. The dam 301 can be constructed of HDPE, PVDF, NPP, or any other material. Preferably, the materials selected are chemically and mechanically stable.

該壩301係實施至該底轉換器裝配件300中,以增加將該發射器302耦合至該晶圓50之底表面52之彎月面尺寸。此促使傳輸至該晶圓50之聲波能量的量提昇以改善清潔。如同圖7中所說明,在無該壩301之情況下,該彎月面僅會使該發射器302之區域A耦合至該晶圓50。然而,在具有該壩301之情況下,該彎月面耦合區域便增加至區域B。The dam 301 is implemented into the bottom converter assembly 300 to increase the meniscus size that couples the emitter 302 to the bottom surface 52 of the wafer 50. This promotes an increase in the amount of sonic energy transmitted to the wafer 50 to improve cleaning. As illustrated in FIG. 7, the meniscus only couples region A of the emitter 302 to the wafer 50 without the dam 301. However, with the dam 301, the meniscus coupling region is increased to the region B.

現參考圖8至12,將討論於該清潔系統1000中該底轉換器裝配件300與該頂轉換器裝配件200相對於彼此之可能的相對配置。Referring now to Figures 8 through 12, a possible relative configuration of the bottom converter assembly 300 and the top converter assembly 200 relative to one another in the cleaning system 1000 will be discussed.

首先參考圖8與9,一種其中該頂轉換器裝配件200之發射器201係對準該底轉換器裝配件300之發射器302並與該底轉換器裝配件300之發射器302相對的配置係加以說明。一晶圓50係說明成介於該等裝配件200、300之間。當液體70係施加至該晶圓50之該頂表面51時,一液體彎月面72係於該頂轉換器裝配件200之該發射器201之一底部部分207與該晶圓50之該頂表面51間形成。相似地,當液體70係施加至該晶圓50之該底表面52時,一液體彎月面71係於該底轉換器裝配件300之該發射器302與該晶圓50之該底表面52間形成。如同可見到的,該頂發射器201與該底發射器302之耦合部分會以一對準方式彼此相對。結果,由該等頂與底轉換器裝配件200、300產生且經由該等彎月面71、72傳輸至該晶圓的聲波能量便可彼此互相干涉及/或抵銷掉。Referring first to Figures 8 and 9, a configuration in which the transmitter 201 of the top converter assembly 200 is aligned with the emitter 302 of the bottom converter assembly 300 and opposite the emitter 302 of the bottom converter assembly 300 It is explained. A wafer 50 is illustrated as being interposed between the assemblies 200, 300. When liquid 70 is applied to the top surface 51 of the wafer 50, a liquid meniscus 72 is attached to the bottom portion 207 of the emitter 201 of the top converter assembly 200 and the top of the wafer 50. The surface 51 is formed. Similarly, when liquid 70 is applied to the bottom surface 52 of the wafer 50, a liquid meniscus 71 is attached to the emitter 302 of the bottom converter assembly 300 and the bottom surface 52 of the wafer 50. Formed between. As can be seen, the coupling portions of the top emitter 201 and the bottom emitter 302 will oppose each other in an aligned manner. As a result, the acoustic energy generated by the top and bottom converter assemblies 200, 300 and transmitted to the wafer via the meniscus 71, 72 can be correlated with each other or offset.

因此,於某些情況中,可能需要在一晶圓清潔循環期間以一交替及/或連續方式操作該等頂及底轉換器裝配件200、300。於其他具體實施例中,若干涉並非一問題,則可能需要同時致動該等頂及底轉換器裝配件200、300之操作。Thus, in some cases, it may be desirable to operate the top and bottom converter assemblies 200, 300 in an alternating and/or continuous manner during a wafer cleaning cycle. In other embodiments, if interference is not an issue, then the operations of the top and bottom converter assemblies 200, 300 may need to be actuated simultaneously.

現同時參考圖10與11,說明該清潔系統1000中該底轉換器裝配件300與該頂轉換器裝配件200相對於彼此的一替代性相對配置。於此具體實施例中,該等頂及底轉換器裝配件200、300之發射器201、302彼此並沒有對準亦不相對。因此,干涉在同時對該晶圓產生及傳輸聲波能量期間應不致於造成問題。儘管於該說明中該等頂與底發射器201、302間之分離的水平角度係90度,然而仍可運用任何其他角度,包括但不限於180度、45度等。Referring now to Figures 10 and 11, an alternative relative configuration of the bottom converter assembly 300 and the top converter assembly 200 relative to one another in the cleaning system 1000 is illustrated. In this embodiment, the emitters 201, 302 of the top and bottom converter assemblies 200, 300 are not aligned or opposite each other. Therefore, interference should not cause problems during the simultaneous generation and transmission of acoustic energy to the wafer. Although the horizontal angle of separation between the top and bottom emitters 201, 302 is 90 degrees in this description, any other angle may be utilized including, but not limited to, 180 degrees, 45 degrees, and the like.

於產生上述系統期間發現,即便是在未致動(即,被動)時,改善的清潔結果係由僅有該底轉換器裝配件300出現在該清潔系統1000中並配置成如圖8中所顯示而達成。已發現,該底轉換器裝配件300之發射器302會持續朝向該晶圓50之底表面51反射回由該頂轉換器裝配件200所產生之聲波能量的至少一分率。因此,就另一方面而言,本發明係一種利用耦合至該晶圓之相對表面之一被動反射部件的新穎系統而非該主動轉換器裝配件。During the production of the above system, it was found that even when not actuated (i.e., passive), the improved cleaning results are present in the cleaning system 1000 only by the bottom converter assembly 300 and configured as shown in Figure 8. Show and achieve. It has been discovered that the emitter 302 of the bottom converter assembly 300 will continue to reflect at least a fraction of the acoustic energy generated by the top converter assembly 200 toward the bottom surface 51 of the wafer 50. Thus, in another aspect, the present invention is a novel system that utilizes one of the opposing surfaces coupled to the wafer to be a passive reflective component rather than the active converter assembly.

現參考圖12,示意說明一種利用一被動背側反射部件400的清潔系統2000。該清潔系統2000係與清潔系統1000相同,除了該底轉換器裝配件係由一反射部件取代之外。事實上,於部分具體實施例中,該反射部件400可為一轉換器裝配件(諸如上述之轉換器裝配件),其並無遭致動。然而,該反射部件400並非如此受限的,而可採用的結構更為廣泛而多元。因此,由於針對相同零件瞭解以上清潔系統1000之說明即足夠,故而將省略對該清潔系統2000之詳細說明。相同編碼係用以指稱相同零件。Referring now to Figure 12, a cleaning system 2000 utilizing a passive backside reflective component 400 is schematically illustrated. The cleaning system 2000 is identical to the cleaning system 1000 except that the bottom converter assembly is replaced by a reflective member. In fact, in some embodiments, the reflective component 400 can be a converter assembly (such as the converter assembly described above) that is not actuated. However, the reflective member 400 is not so limited, and the structure that can be employed is more extensive and diverse. Therefore, since the description of the above cleaning system 1000 for the same part is sufficient, a detailed description of the cleaning system 2000 will be omitted. The same code is used to refer to the same part.

該反射部件400可僅為一板或其他結構。較佳地,該反射部件400係由聲波阻抗值比水之聲波阻抗值大很多的一材料來製成。於一項具體實施例中,該聲波阻抗值較佳地係至少大於5.0,例如石英。該反射部件400較佳地亦可與其所流體耦合之晶圓表面間隔開一距離,該距離係該聲波來源200所產生之聲波能量之波長間隔的四分之一。The reflective component 400 can be just a plate or other structure. Preferably, the reflective member 400 is made of a material having a sonic impedance value that is much greater than the acoustic impedance value of water. In a specific embodiment, the acoustic impedance value is preferably at least greater than 5.0, such as quartz. Preferably, the reflective component 400 can also be spaced apart from the surface of the wafer to which it is fluidly coupled by a distance of one-fourth the wavelength of the acoustic energy generated by the acoustic source 200.

圖13顯示該被動清潔系統200之一替代性具體實施例,其中該反射部件係定位在該晶圓之頂表面附近而非底部。Figure 13 shows an alternative embodiment of the passive cleaning system 200 in which the reflective component is positioned adjacent the top surface of the wafer rather than the bottom.

參考圖14,已發現較佳地可利用一中空管狀結構來作為該反射部件400。例舉中空管狀部件500A至E以作為範例。該等中空管狀部件500A至E可視需要配備轉換器305A至E。該管狀部件可由石英、塑膠、金屬、或其他材料製成。Referring to Figure 14, it has been found that a hollow tubular structure can preferably be utilized as the reflective member 400. Hollow tubular members 500A to E are exemplified as an example. The hollow tubular members 500A-E may optionally be provided with transducers 305A-E. The tubular member can be made of quartz, plastic, metal, or other materials.

然而,應瞭解,即便在先前說明中已然提出本發明之許多特性與優點,以及本發明之結構與功能的細節,該揭示內容僅為說明性,而在細節上可有所改變,尤其是在零件之形狀、大小與配置方面上,而於本發明之原理內可充分地延伸且不致於脫離隨附申請專利範圍之項目的廣泛性一般意義。However, it should be understood that the various features and advantages of the present invention, as well as the details of the structure and function of the present invention, are only illustrative, and may vary in detail, particularly in The shapes, sizes, and configurations of the components are fully extended within the principles of the present invention and do not depart from the broad general meaning of the items of the appended claims.

10...可旋轉支架10. . . Rotatable bracket

11...馬達11. . . motor

12...控制器12. . . Controller

13...頂分注器13. . . Top dispenser

14...底分注器14. . . Bottom dispenser

15...液體儲存器15. . . Liquid reservoir

16...液體供應子系統16. . . Liquid supply subsystem

17...液體供應線17. . . Liquid supply line

18...液體供應線18. . . Liquid supply line

19...氣體供應子系統19. . . Gas supply subsystem

20...氣體來源20. . . Gas source

21...氣體供應線twenty one. . . Gas supply line

22...氣體供應線twenty two. . . Gas supply line

23...電能量信號來源twenty three. . . Source of electrical energy signal

50...半導體晶圓50. . . Semiconductor wafer

51...頂表面51. . . Top surface

52...底表面52. . . Bottom surface

70...液體70. . . liquid

71...液體彎月面71. . . Liquid meniscus

72...液體彎月面72. . . Liquid meniscus

200...頂轉換器裝配件200. . . Top converter assembly

201...桿狀發射器201. . . Rod emitter

202...外殼202. . . shell

203...處理缽203. . . Processing

207...底部部分207. . . Bottom part

250...驅動裝配件/致動器250. . . Drive assembly / actuator

300...底轉換器裝配件300. . . Bottom converter assembly

301...壩301. . . dam

302...發射器302. . . launcher

303...基底303. . . Base

304...外殼304. . . shell

305...轉換器305. . . converter

305A-E...轉換器305A-E. . . converter

306...凸面外表面306. . . Convex outer surface

307...凹面內表面307. . . Concave inner surface

308...凸面上表面308. . . Convex surface

309...凹面下表面309. . . Concave lower surface

310...實質封閉空間310. . . Substantial closed space

311...開口311. . . Opening

312...開口312. . . Opening

313...頂部313. . . top

314...延長邊緣314. . . Extend the edge

315...液體保持通道315. . . Liquid retention channel

316...向上突起之脊部316. . . Upward raised ridge

317...內表面317. . . The inner surface

318...外表面318. . . The outer surface

319...頂邊緣319. . . Top edge

350...致動器350. . . Actuator

400...被動背側反射部件400. . . Passive backside reflector

500A-E...中空管狀部件500A-E. . . Hollow tubular part

1000...清潔系統1000. . . Cleaning system

2000...清潔系統2000. . . Cleaning system

圖1係根據本發明一項具體實施例之一聲波能量清潔系統的示意。1 is a schematic illustration of a sonic energy cleaning system in accordance with an embodiment of the present invention.

圖2係圖1之聲波能量清潔系統之一結構具體實施例的透視圖。2 is a perspective view of a structural embodiment of one of the acoustic energy cleaning systems of FIG. 1.

圖3係圖2之聲波能量清潔系統的斷面側視圖。Figure 3 is a cross-sectional side view of the acoustic wave energy cleaning system of Figure 2.

圖4係根據本發明一項具體實施例的一轉換器裝配件,該裝配件於圖2之聲波能量清潔系統中用作該底側轉換器裝配件。4 is a converter assembly for use as the bottom side converter assembly in the sonic energy cleaning system of FIG. 2, in accordance with an embodiment of the present invention.

圖5係沿圖4之斷面切線A-A的圖4之轉換器裝配件的斷面圖。Figure 5 is a cross-sectional view of the converter assembly of Figure 4 taken along line A-A of the section of Figure 4.

圖6係圖4之轉換器裝配件的分解圖。Figure 6 is an exploded view of the converter assembly of Figure 4.

圖7係定位於根據本發明一項具體實施例之一半導體晶圓之一底表面附近的圖4之轉換器裝配件的示意,其中以斷面顯示圖4之轉換器裝配件。7 is a schematic illustration of the converter assembly of FIG. 4 positioned adjacent one of the bottom surfaces of a semiconductor wafer in accordance with an embodiment of the present invention, wherein the converter assembly of FIG. 4 is shown in cross section.

圖8係關於圖2之聲波能量清潔系統之底側轉換器裝配件的頂側轉換器裝配件之一配置的示意表示。Figure 8 is a schematic representation of one configuration of a top side converter assembly for the bottom side converter assembly of the sonic energy cleaning system of Figure 2.

圖9係沿圖8之斷面切線B-B的圖8之轉換器裝配件配置的示意表示之斷面圖。Figure 9 is a schematic cross-sectional view showing the arrangement of the converter assembly of Figure 8 taken along line BB of Figure 8;

圖10係關於圖2之聲波能量清潔系統之底側轉換器裝配件的頂側轉換器裝配件之一替代性配置的示意表示。Figure 10 is a schematic representation of an alternative configuration of a top side converter assembly for the bottom side converter assembly of the sonic energy cleaning system of Figure 2.

圖11係沿圖8之斷面切線C-C的圖10之替代性轉換器裝配件配置的示意表示之斷面圖。Figure 11 is a schematic cross-sectional view of the alternative converter assembly configuration of Figure 10 taken along line C-C of the section of Figure 8.

圖12係利用根據本發明一項具體實施例之一反射部件之一聲波能量清潔系統的示意。Figure 12 is a schematic illustration of a sonic energy cleaning system utilizing a reflective member in accordance with an embodiment of the present invention.

圖13係利用根據本發明一替代性具體實施例之一反射部件之一聲波能量清潔系統的示意。Figure 13 is a schematic illustration of a sonic energy cleaning system utilizing a reflective member in accordance with an alternative embodiment of the present invention.

圖14顯示於圖12之聲波能量清潔系統中亦可作用為一反射部件之一轉換器裝配件的五替代性具體實施例。Figure 14 shows a five alternative embodiment of a converter assembly that can also function as a reflective component in the acoustic energy cleaning system of Figure 12.

10...可旋轉支架10. . . Rotatable bracket

11...馬達11. . . motor

12...控制器12. . . Controller

13...頂分注器13. . . Top dispenser

14...底分注器14. . . Bottom dispenser

15...液體儲存器15. . . Liquid reservoir

16...液體供應子系統16. . . Liquid supply subsystem

17...液體供應線17. . . Liquid supply line

18...液體供應線18. . . Liquid supply line

19...氣體供應子系統19. . . Gas supply subsystem

20...氣體來源20. . . Gas source

21...氣體供應線twenty one. . . Gas supply line

22...氣體供應線twenty two. . . Gas supply line

23...電能量信號來源twenty three. . . Source of electrical energy signal

50...半導體晶圓50. . . Semiconductor wafer

51...頂表面51. . . Top surface

52...底表面52. . . Bottom surface

200...頂轉換器裝配件200. . . Top converter assembly

250...驅動裝配件/致動器250. . . Drive assembly / actuator

300...底轉換器裝配件300. . . Bottom converter assembly

305...轉換器305. . . converter

350...致動器350. . . Actuator

1000...清潔系統1000. . . Cleaning system

Claims (40)

一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以支撐一平坦物體;一第一分注器,其用以將液體施加至於該可旋轉支架上之一平坦物體的一第一表面;一第二分注器,其用以將液體施加至於該可旋轉支架上之一平坦物體的一第二表面;一第一轉換器裝配件,其包含用以產生聲波能量之一第一轉換器與聲波耦合至該第一轉換器之一第一發射器,該第一轉換器裝配件經定位使得在該第一分注器將液體施加至該可旋轉支架上之一平坦物體的該第一表面時,於該第一發射器之一部分與該平坦物體之該第一表面間形成一第一液體彎月面;以及一第二轉換器裝配件,其包含用以產生聲波能量之一第二轉換器與聲波耦合至該第二轉換器之一第二發射器,其中該第二發射器具有一凸面外表面,該凸面外表面具有一第二延長邊緣,該第二轉換器裝配件經定位使得在該第二分注器將液體施加至該可旋轉支架上之該平坦物體的該第二表面時,於該第二發射器之該凸面外表面之該第二延長邊緣與該平坦物體之該第二表面間形成一第二液體彎月面。 A system for processing a flat object, comprising: a rotatable support for supporting a flat object; a first dispenser for applying a liquid to one of the flat objects on the rotatable support a first surface; a second dispenser for applying a liquid to a second surface of a flat object on the rotatable support; a first converter assembly containing one of the sound energy for generating sound waves a first transducer and acoustic wave coupled to one of the first transducers, the first transducer assembly being positioned such that the first dispenser dispenses liquid to a flat object on the rotatable mount The first surface forms a first liquid meniscus between a portion of the first emitter and the first surface of the planar object; and a second transducer assembly for generating acoustic energy a second converter and acoustic wave coupled to one of the second transducers, wherein the second emitter has a convex outer surface, the convex outer surface having a second elongated edge, the second transducer Accessories Positioning such that when the second dispenser applies liquid to the second surface of the flat object on the rotatable mount, the second elongated edge of the convex outer surface of the second emitter and the flat object A second liquid meniscus is formed between the second surfaces. 如請求項1之系統,其中該可旋轉支架會以一實質上水平定向支撐並旋轉該平坦物體,該平坦物體之該第一表面係一頂表面而該平坦物體之該第二表面係一底表面。 The system of claim 1, wherein the rotatable support supports and rotates the flat object in a substantially horizontal orientation, the first surface of the flat object being a top surface and the second surface of the flat object being a bottom surface. 如請求項1之系統,其進一步包含一致動器,其操作連接至該第二轉換器裝配件,以便能在一處理定位與一縮回定位間移動該第二轉換器裝配件。 The system of claim 1 further comprising an actuator operatively coupled to the second converter assembly to move the second converter assembly between a process positioning and a retracted position. 如請求項3之系統,其進一步:其中該可旋轉支架會以一實質上水平定向支撐並旋轉該平坦物體,該物體之該第一表面係一頂表面而該物體之該第二表面係一底表面;以及其中該處理定位係一升高之定位,其中該第二轉換器裝配件之至少一部分係與該平坦物體之該底表面相間隔開,從而使該第二液體彎月面形成於該平坦物體之該底表面與該第二發射器之該凸面外表面之該第二延長邊緣之間,而該縮回定位係一降低之定位,其中該平坦物體可被安全地負載至該可旋轉支架上,而不會與該第二轉換器裝配件相接觸。 The system of claim 3, wherein: the rotatable support supports and rotates the flat object in a substantially horizontal orientation, the first surface of the object being a top surface and the second surface of the object being a a bottom surface; and wherein the processing positioning is elevated, wherein at least a portion of the second transducer assembly is spaced from the bottom surface of the planar object such that the second liquid meniscus is formed The bottom surface of the flat object is between the second extended edge of the convex outer surface of the second emitter, and the retracted positioning is lowered, wherein the flat object can be safely loaded to the Rotate the bracket without coming into contact with the second converter assembly. 如請求項1之系統,其進一步:其中該第一發射器部分包含一第一延長邊緣,其會實質上平行該可旋轉支架上之該平坦物體的該第一表面而延伸;以及其中該第二延長邊緣會實質上平行該可旋轉支架上之該平坦物體的該第二表面而延伸。 The system of claim 1, further wherein: the first emitter portion includes a first elongated edge that extends substantially parallel to the first surface of the planar object on the rotatable mount; and wherein the first The second extended edge extends substantially parallel to the second surface of the planar object on the rotatable mount. 如請求項1之系統,其進一步包含用以支撐該第二轉換器裝配件之一基底,該第二分注器係位於該基底的複數個噴嘴並經調適以將液體施加至該可旋轉支架上之該平坦物體之該第二表面。 The system of claim 1 further comprising a substrate for supporting the second transducer assembly, the second dispenser being located at a plurality of nozzles of the substrate and adapted to apply liquid to the rotatable mount The second surface of the flat object. 如請求項1之系統,其中該第二轉換器裝配件進一步包含一外殼,其連接至該第二發射器,以便能形成該第二轉換器係位於其中的一實質上封閉的空間,該外殼包含供一氣體流進及/或流出該空間的一或多個開口。 The system of claim 1, wherein the second converter assembly further comprises a housing coupled to the second emitter to form a substantially enclosed space in which the second converter is located, the housing One or more openings for a gas to flow into and/or out of the space are included. 如請求項1之系統,其進一步包含一壩,其環繞該第二發射器之一周邊的至少一部分以便能形成一液體保持通道,該第二發射器之該第二延長邊緣會突起而超過該壩之一頂部。 The system of claim 1 further comprising a dam surrounding at least a portion of a perimeter of one of the second emitters to form a liquid retention channel, the second elongated edge of the second emitter protruding beyond the The top of one of the dams. 如請求項1之系統,其進一步包含:一壩,其環繞該第二發射器之一周圍的至少一部分以便能形成一液體保持通道;以及該第二發射器之該凸面外表面具有一頂部,該第二發射器之該頂部會突起超過該壩之一頂部。 The system of claim 1, further comprising: a dam surrounding at least a portion of one of the second emitters to form a liquid retention channel; and the convex outer surface of the second emitter having a top portion The top of the second emitter will protrude beyond the top of one of the dams. 如請求項1之系統,其進一步包含一壩,其環繞該第二發射器之一周圍的至少一部分以便能在該第二發射器與該壩之間形成一液體保持通道。 The system of claim 1 further comprising a dam surrounding at least a portion of one of the second emitters to form a liquid retention channel between the second emitter and the dam. 如請求項1之系統,其中該第一發射器之該部分與該第二發射器之該第二延長邊緣彼此相對。 The system of claim 1, wherein the portion of the first emitter and the second elongated edge of the second emitter are opposite each other. 如請求項1之系統,其進一步包含:一控制器,其操作耦合至該第一轉換器裝配件與至該第二轉換器裝配件;該控制器經程式化以連續操作該第一轉換器裝配件與該第二轉換器裝配件。 The system of claim 1, further comprising: a controller operatively coupled to the first converter assembly and to the second converter assembly; the controller being programmed to continuously operate the first converter Assembly and the second converter assembly. 如請求項1之系統,其中該第二發射器係一並排圓柱形 板,其具有一凹面內表面與該凸面外表面。 The system of claim 1, wherein the second emitter is cylindrically side by side A plate having a concave inner surface and the convex outer surface. 一種用以清潔平坦物體的系統,其包含:一可旋轉支架,其用以支撐一平坦物體;一第一轉換器裝配件,其包含一第一轉換器與聲波耦合至該第一轉換器之一第一發射器,該第一轉換器裝配件經定位使得於該第一發射器之一部分與該可旋轉支架之該平坦物體之一第一表面間存在一第一間隙,而在將液體藉由一第一分注器施加至該第一表面時,於該第一發射器之該部分與該平坦物體之該第一表面間形成一第一液體彎月面;以及一第二轉換器裝配件,其包含一第二轉換器與聲波耦合至該第二轉換器之一第二發射器,該第二轉換器裝配件經定位使得於該第二發射器之一部分與該可旋轉支架之該平坦物體之一第二表面間存在一第二間隙,而在將液體藉由一第二分注器施加至該第二表面時,於該第二發射器之該部分與該第二表面間形成一第二液體彎月面;一控制器,其操作耦合至該第一轉換器裝配件與該第二轉換器裝配件;該控制器經程式化以用一替代方式或一連續方式操作該第一轉換器裝配件與該第二轉換器裝配件;及其中該第一發射器之該部分與該第二發射器之該部分彼此相對。 A system for cleaning a flat object, comprising: a rotatable support for supporting a flat object; a first converter assembly including a first converter and acoustic waves coupled to the first converter a first transmitter, the first converter assembly being positioned such that a first gap exists between a portion of the first emitter and a first surface of the planar object of the rotatable mount, and When a first dispenser is applied to the first surface, a first liquid meniscus is formed between the portion of the first emitter and the first surface of the planar object; and a second transducer is mounted An accessory comprising a second transducer and acoustic wave coupled to one of the second transducers, the second transducer assembly being positioned such that a portion of the second emitter and the rotatable mount are a second gap exists between the second surface of the flat object, and is formed between the portion of the second emitter and the second surface when the liquid is applied to the second surface by a second dispenser a second liquid meniscus; a controller operatively coupled to the first converter assembly and the second converter assembly; the controller being programmed to operate the first converter assembly and the second in an alternate manner or in a continuous manner a converter assembly; and wherein the portion of the first emitter and the portion of the second emitter are opposite each other. 一種用以處理平坦物體的系統,其包含: 一可旋轉支架,其用以在一實質上水平之定向上支撐並旋轉一平坦物體;一轉換器裝配件,其包含用以產生聲波能量之一轉換器、一發射器與環繞該發射器之一周邊的至少一部分之一壩,使得在該發射器與該壩之間能夠形成一液體保持通道,該發射器具有一凸面外表面,該凸面外表面具有一頂部,該頂部聲波耦合至該轉換器,該第二發射器之該頂部突起超過該壩之一頂部;以及該轉換器裝配件經定位使得該發射器之該頂部係鄰近該可旋轉支架上之該平坦物體之一底表面,使得在將液體施加至該平坦物體之該底表面時,於該發射器之該頂部與該平坦物體之該底表面間形成一液體彎月面。 A system for processing a flat object, comprising: a rotatable mount for supporting and rotating a flat object in a substantially horizontal orientation; a converter assembly including a transducer for generating acoustic energy, a transmitter and surrounding the emitter a dam of at least a portion of a perimeter such that a liquid retention channel can be formed between the emitter and the dam, the emitter having a convex outer surface having a top surface, the top acoustic wave coupled to the converter The top protrusion of the second emitter exceeds a top of the dam; and the converter assembly is positioned such that the top of the emitter is adjacent to a bottom surface of the planar object on the rotatable mount such that When a liquid is applied to the bottom surface of the flat object, a liquid meniscus is formed between the top of the emitter and the bottom surface of the flat object. 如請求項15之系統,其進一步包含一分注器,其用以將液體施加至該可旋轉支架上之一平坦物體的一底表面。 The system of claim 15 further comprising a dispenser for applying a liquid to a bottom surface of a flat object on the rotatable mount. 如請求項15之系統,其中該發射器係一並排圓柱形板且該頂部會形成一延長邊緣。 The system of claim 15 wherein the emitter is a side-by-side cylindrical plate and the top portion forms an elongated edge. 如請求項15之系統,其中該轉換器裝配件進一步包含一外殼,其連接至該發射器以便能形成該轉換器係位於其中的一實質封閉空間。 The system of claim 15 wherein the converter assembly further comprises a housing coupled to the transmitter to form a substantially enclosed space in which the converter is located. 一用以安裝於一平坦物體之一底表面之下的轉換器裝配件,其包含:一轉換器,其用以產生聲波能量;一發射器,其聲波耦合至該轉換器;一壩,其環繞該發射器之一周邊的至少一部分以便能 在該發射器與該壩之間形成一液體保持通道;及其中該發射器具有一凸面外表面,其具有於該壩之一頂部上突出的一頂部,該發射器之該頂部係鄰近該平坦物體之該底表面,使得在將液體施加至該平坦物體之該底表面時,於該發射器之該頂部與該平坦物體之該底表面間形成一液體彎月面。 a converter assembly for mounting under a bottom surface of a flat object, comprising: a transducer for generating acoustic energy; a transmitter having acoustic waves coupled to the transducer; a dam; Surrounding at least a portion of one of the perimeters of the emitter to enable Forming a liquid holding passage between the emitter and the dam; and wherein the emitter has a convex outer surface having a top protruding from a top of one of the dams, the top of the emitter being adjacent to the flat object The bottom surface is such that when a liquid is applied to the bottom surface of the flat object, a liquid meniscus is formed between the top of the emitter and the bottom surface of the flat object. 如請求項19之轉換器裝配件,其中該發射器係一並排圓柱形板,其具有一凹面內表面與一凸面外表面。 The transducer assembly of claim 19, wherein the emitter is a side-by-side cylindrical plate having a concave inner surface and a convex outer surface. 一種處理一平坦物體的方法,其包含:a)於一氣體環境內以一實質上水平之定向支撐一平坦物體,該平坦物體具有一底表面與一頂表面;b)旋轉該平坦物體同時並維持該實質上水平之定向;c)將一液體薄膜施加至該平坦物體之該頂表面;d)於該平坦物體之該底表面上施加一液體薄膜;e)經由包含一第一轉換器與一第一發射器之一第一轉換器裝配件將聲波能量應用至該平坦物體之該頂表面,該第一發射器之一部分於該平坦物體之該頂表面上接觸該液體薄膜;以及f)經由包含一第二轉換器與一第二發射器之一第二轉換器裝配件將聲波能量應用至該平坦物體之該底表面,該第二發射器具有一凸面外表面,該凸面外表面具有一第二延長邊緣,該第二延長邊緣於該平坦物體之該底表面上接觸該液體薄膜。 A method of processing a flat object, comprising: a) supporting a flat object in a substantially horizontal orientation within a gaseous environment, the flat object having a bottom surface and a top surface; b) rotating the flat object simultaneously Maintaining the substantially horizontal orientation; c) applying a liquid film to the top surface of the flat object; d) applying a liquid film to the bottom surface of the flat object; e) via including a first transducer a first transducer assembly of a first emitter applies acoustic energy to the top surface of the planar object, a portion of the first emitter contacting the liquid film on the top surface of the planar object; and f) Applying acoustic energy to the bottom surface of the planar object via a second transducer assembly comprising a second transducer and a second emitter, the second emitter having a convex outer surface having a convex outer surface a second elongated edge that contacts the liquid film on the bottom surface of the flat object. 如請求項21之方法,其中步驟e)與f)係就地執行。 The method of claim 21, wherein steps e) and f) are performed in situ. 如請求項21之方法,其中步驟f)進一步包含將該第二轉換器裝配件從一縮回定位升高至一處理定位,其中該第二發射器之該第二延長邊緣會接觸該平坦物體之該底表面上之該液體薄膜。 The method of claim 21, wherein the step f) further comprises raising the second converter assembly from a retracted position to a process position, wherein the second extended edge of the second transmitter contacts the flat object The liquid film on the bottom surface. 如請求項21之方法,其中步驟e)包含將該第一轉換器裝配件從一縮回定位移動至一處理定位,其中該第一發射器之該部分會接觸該平坦物體之該頂表面上之該液體薄膜。 The method of claim 21, wherein the step e) comprises moving the first transducer assembly from a retracted position to a process position, wherein the portion of the first emitter contacts the top surface of the flat object The liquid film. 如請求項21之方法,其中步驟e)與f)係以一替代方式、同時及/或連續加以執行。 The method of claim 21, wherein steps e) and f) are performed in an alternative, simultaneous and/or continuous manner. 如請求項21之方法,其中於步驟e)與f)中所施加之該聲波能量係於該超音波頻率範圍中。 The method of claim 21, wherein the acoustic energy applied in steps e) and f) is in the ultrasonic frequency range. 如請求項21之方法,其中該第二發射器之該第二延長邊緣形成一頂部,該頂部接觸該平坦物體之該底表面上之該液體薄膜。 The method of claim 21, wherein the second elongated edge of the second emitter forms a top that contacts the liquid film on the bottom surface of the planar object. 如請求項27之方法,其中該第一發射器具有一延長邊緣,其係接觸該平坦物體之該頂表面上之該液體薄膜。 The method of claim 27, wherein the first emitter has an elongated edge that contacts the liquid film on the top surface of the flat object. 如請求項21之方法,其中該平坦物體係一半導體晶圓,該頂表面係該晶圓之一器件側且該底表面係該晶圓之一非器件側。 The method of claim 21, wherein the planar system is a semiconductor wafer, the top surface being one of the device sides of the wafer and the bottom surface being one of the non-device sides of the wafer. 一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以在一實質上水平之定向上支撐一平坦物體;一轉換器裝配件,其包含用以產生聲波能量之一轉換 器與聲波耦合至該轉換器之一發射器,該轉換器裝配件經定位使得該發射器之一部分係鄰近該支架上之該平坦物體之一頂表面,使得在將液體施加至該平坦物體之該頂表面時於該發射器之該部分與該平坦物體之該頂表面間形成一第一液體彎月面;以及一反射部件,其具有一凸面外表面,該凸面外表面結束於一頂部,該頂部形成一延長邊緣,該延長邊緣沿著該反射部件之一長度延伸,該反射部件經定位使得該反射部件之該延長邊緣係鄰近該支架上之該平坦物體之一底表面,在將液體施加至該平坦物體之該底表面時於該反射部件之該延長邊緣與該平坦物體之該底表面間形成一第二液體彎月面;以及該反射部件經定位使得由該第一轉換器裝配件產生之聲波能量的至少一分率通過該第一第一彎月面、該平坦物體及該第二彎月面,且係朝向該平坦物體之該底表面反射回。 A system for processing a flat object, comprising: a rotatable mount for supporting a flat object in a substantially horizontal orientation; a converter assembly including one for converting acoustic energy And sound waves are coupled to one of the transducers of the transducer, the transducer assembly being positioned such that a portion of the emitter is adjacent a top surface of the planar object on the support such that a liquid is applied to the planar object The top surface forms a first liquid meniscus between the portion of the emitter and the top surface of the flat object; and a reflective member having a convex outer surface, the convex outer surface ending at a top portion The top portion defines an elongated edge extending along a length of the reflective member, the reflective member being positioned such that the extended edge of the reflective member is adjacent to a bottom surface of the planar object on the support, Forming a bottom surface of the flat object with a second liquid meniscus between the extended edge of the reflective member and the bottom surface of the flat object; and the reflective member is positioned such that the first transducer is mounted At least one fraction of the sound wave energy generated by the accessory passes through the first first meniscus, the flat object, and the second meniscus, and is toward the bottom of the flat object Face reflected back. 如請求項30之系統,其中該反射部件係由具有一聲波阻抗大於5.0Mrayl的一材料來構成。 The system of claim 30, wherein the reflective component is comprised of a material having an acoustic impedance greater than 5.0 Mrayl. 如請求項30之系統,其中該轉換器裝配件係經調適以產生具有一波長之聲波能量,且其中該反射部件之該延長邊緣係與該平坦物體之該底表面間隔一距離,其係該聲波能量之該波長的一四分之一間隔。 The system of claim 30, wherein the converter assembly is adapted to generate acoustic wave energy having a wavelength, and wherein the extended edge of the reflective member is spaced a distance from the bottom surface of the planar object, One quarter of the wavelength of the sonic energy is spaced. 如請求項30之系統,其中該反射部件係由石英、藍寶石、氮化硼、碳化矽、碳化玻璃或其之一組合來構成。 The system of claim 30, wherein the reflective member is comprised of quartz, sapphire, boron nitride, tantalum carbide, carbonized glass, or a combination thereof. 如請求項30之系統,其進一步包含:一第一分注器,其用以將液體施加至於該可旋轉支架之該平坦物體的該頂表面;以及一第二分注器,其用以將液體施加至於該可旋轉支架上之該平坦物體的該底表面。 The system of claim 30, further comprising: a first dispenser for applying liquid to the top surface of the flat object of the rotatable mount; and a second dispenser for Liquid is applied to the bottom surface of the flat object on the rotatable mount. 如請求項30之系統,其中該反射部件係能夠產生聲波能量的一第二轉換器裝配件。 The system of claim 30, wherein the reflective component is a second transducer assembly capable of generating acoustic energy. 一種用以處理平坦物體的系統,其包含:一可旋轉支架,其用以於一氣體環境中支撐一平坦物體;一轉換器裝配件,其包含一轉換器與接合至該轉換器之一發射器,該轉換器裝配件經定位使得於該發射器之一部分與該支架上之該平坦物體之一第一表面間存在一第一小間隙,使得在將液體施加至該平坦物體之該第一表面時,於該發射器之該部分與該平坦物體之該第一表面間形成一第一液體彎月面;一反射部件,其具有一凸面外表面,該凸面外表面結束於一頂部,該頂部形成一延長邊緣,該延長邊緣沿著該反射部件之一長度延伸,該反射部件經定位使得於該反射部件之該延長邊緣與該支架上之該平坦物體之一第二表面間存在一第二小間隙,使得在將液體施加至該平坦物體之該第二表面時,於該反射部件之該延長邊緣與該平坦物體之該第二表面間形成一第二液體彎月面;以及 該反射部件經定位使得由該第一轉換器裝配件產生之聲波能量的至少一分率通過該第一彎月面、該平坦物體與該第二彎月面,且係朝向該平坦物體之該第二表面而由該反射器部件反射回。 A system for processing a flat object, comprising: a rotatable support for supporting a flat object in a gaseous environment; a converter assembly including a transducer coupled to one of the transducers for emission The transducer assembly is positioned such that a first small gap exists between a portion of the emitter and a first surface of the planar object on the support such that the first application of liquid to the planar object Forming a first liquid meniscus between the portion of the emitter and the first surface of the flat object; a reflective member having a convex outer surface, the convex outer surface ending at a top, the surface Forming an extended edge at the top, the extended edge extending along a length of the reflective member, the reflective member being positioned such that there is a first edge between the extended edge of the reflective member and a second surface of the planar object on the bracket a small gap such that when the liquid is applied to the second surface of the flat object, a relationship is formed between the extended edge of the reflective member and the second surface of the flat object Second liquid meniscus; and The reflective member is positioned such that at least a fraction of the acoustic energy generated by the first transducer assembly passes through the first meniscus, the flat object and the second meniscus, and is toward the flat object The second surface is reflected back by the reflector component. 一種處理平坦物體的方法,其包含:a)於一氣體環境內以一實質上水平之定向支撐一平坦物體,該平坦物體具有一底表面與一頂表面;b)旋轉該平坦物體同時並維持該實質上水平之定向;c)將一液體薄膜施加至該平坦物體之該頂表面;d)於該平坦物體之該底表面上施加一液體薄膜;e)經由包含一轉換器與一發射器之一轉換器裝配件將聲波能量應用至該平坦物體之該頂表面,該發射器之一部分於該平坦物體之該頂表面上接觸該液體薄膜,由該轉換器裝配件產生之聲波能量的至少一分率通過該平坦物體之該頂表面上之該液體薄膜、通過該平坦物體及通過該平坦物體之該底表面上之該液體薄膜;以及f)經由接觸於該平坦物體之該底表面上之該液體薄膜的一反射部件朝向該平坦物體之該底表面將由該第一轉換器裝配件產生且會通過該平坦物體之聲波能量反射回,該反射部件具有結束於一頂部之一凸面外表面,該頂部形成一延長邊緣,該延長邊緣沿著該反射部件之一長度延伸。 A method of processing a flat object, comprising: a) supporting a flat object in a substantially horizontal orientation within a gaseous environment, the flat object having a bottom surface and a top surface; b) rotating the flat object while maintaining The substantially horizontal orientation; c) applying a liquid film to the top surface of the flat object; d) applying a liquid film to the bottom surface of the flat object; e) via including a converter and an emitter One of the transducer assemblies applies sonic energy to the top surface of the flat object, one of the emitters contacting the liquid film on the top surface of the flat object, at least the acoustic energy generated by the converter assembly a fraction passing through the liquid film on the top surface of the flat object, passing the flat object and passing the liquid film on the bottom surface of the flat object; and f) via contacting the bottom surface of the flat object a reflective member of the liquid film toward the bottom surface of the flat object will be generated by the first converter assembly and reflected back by the sound energy of the flat object The reflecting member having a top end of the outer surface of one of the convex surface, forming an extension of the top edge, the edge extension member extending along the length of one of said reflector. 如請求項37之方法,其中該反射部件係由具有一聲波阻抗大於5.0的一材料來構成。 The method of claim 37, wherein the reflecting member is constructed of a material having an acoustic impedance greater than 5.0. 如請求項37之方法,其中該反射部件係一管狀部件、一並排圓柱形部件、一平坦板或一彎曲板。 The method of claim 37, wherein the reflecting member is a tubular member, a side-by-side cylindrical member, a flat plate or a curved plate. 如請求項37之方法,其中該聲波能量具有一波長,該反射部件與該平坦物體之該底表面間隔一距離,其係該聲波能量之該波長的一四分之一間隔。 The method of claim 37, wherein the acoustic energy has a wavelength, the reflective member being spaced from the bottom surface of the planar object by a distance of one quarter of the wavelength of the acoustic energy.
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