CN102468117A - Wafer cleaning apparatus - Google Patents
Wafer cleaning apparatus Download PDFInfo
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- CN102468117A CN102468117A CN2010105367004A CN201010536700A CN102468117A CN 102468117 A CN102468117 A CN 102468117A CN 2010105367004 A CN2010105367004 A CN 2010105367004A CN 201010536700 A CN201010536700 A CN 201010536700A CN 102468117 A CN102468117 A CN 102468117A
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- transducer
- crystal oscillator
- piezoelectric crystal
- micropore
- clean wafer
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Abstract
The invention relates to the semiconductor integrated circuit device cleaning technology field, especially relating to a wafer cleaning apparatus. The cleaning apparatus comprises a piezoelectric crystal oscillator, a cavity used for installing the piezoelectric crystal oscillator and an energy transducer which is in fixed connection with the piezoelectric crystal oscillator. A surface of the energy transducer has a plurality of raised cylinders, a plurality of micropores are provided among the cylinders, and the micropores penetrate to a bottom of the energy transducer. Through the energy transducer with the run-through micropores provided by the invention, by utilizing a megasonic physical transmission principle, acting force parallel to a wafer characteristic dimension sidewall is generated, no bending moment effect is generated to characteristic dimension, destroy of a wafer characteristic dimension structure is reduced and eliminated to the max, and chemical removing efficiency of residues is raised.
Description
Technical field
The present invention relates to semiconductor device cleaner technology field, particularly a kind of clean wafer device.
Background technology
Along with the integrated circuit characteristic size enters into the deep-submicron stage, the requirement of the cleaning in the IC wafer manufacturing process is also increasingly high.In recent years; Introduced the clean wafer method of the high-frequency sound energy that adopts million acoustic energies; Though the device through million acoustic energy clean semiconductor wafers can be removed polluter from wafer surface effectively, in process of cleaning, because the mega sonic wave oscillator is unordered at the mega sonic wave mechanical vibrational energy that wafer surface produces; Thereby the sidewall at device feature size has produced moment of flexure; Cause collapsing of lines, made the characteristic size structure of wafer surface can suffer serious destruction, influenced the yields that wafer cleans.Find in the research; Act on the moment of flexure that the vertical force on the characteristic size sidewall forms; Be the subject matter that causes characteristic size to destroy; Therefore, how farthest forming the acoustic wave energy active force that parallels along the characteristic size sidewall is to solve the selective corrosion residue key problem in technology of destructive characteristics dimensional structure not again simultaneously.
Summary of the invention
The technical problem that (one) will solve
The technical problem that the present invention will solve is in making the semiconductor device process, how to reach the requirement of clean wafers, and farthest reduces and eliminate the destruction to the wafer feature dimensional structure.
(2) technical scheme
In order to solve the problems of the technologies described above, the present invention provides a kind of clean wafer device, and comprise piezoelectric crystal oscillator 1, be used to install the chamber 2 of piezoelectric crystal oscillator 1, and the transducer 5 that is fixedly connected with piezoelectric crystal oscillator 1;
Further, be positioned at the air cooling fluid intake 3 gentle cold fluid outlets 4 of both sides, chamber 2 top.
Further, leave the gap between transducer 5 and the semiconductor to be cleaned.
Further, piezoelectric crystal oscillator 1 generation frequency is the mega sonic wave of 700K-2MHZ.
Further, micropore 52 is any one shape in circular, oval, square or the rhombus.
Further, the diameter of micropore 52 is the millimeter level, and the length of micropore 52 is micropore 52 diameter 5-10 times.
Further, the spacing of 52 of several micropores be micro-pore diameter 1-2 doubly.
Further, has the side mouth 53 that imports cleaning medium on the side of transducer 5.
Further, transducer 5 is quartz, ruby or the macromolecular material with antiacid caustic corrosion.
Further, the clean wafer device also comprises the rotary supporting unit 6 of placing semiconductor wafer.
(3) beneficial effect
Advantage of the present invention and beneficial effect are: clean wafer device of the present invention adopts has the transducer that connects micropore; Utilize the acoustic wave energy active force of generation of mega sonic wave physical transfer principle and wafer feature size parallel sidewalls; Can not produce the effect of moment of flexure to characteristic size; Farthest reduce and eliminate destruction, improved chemical scavenging efficient residue to the wafer feature dimensional structure.
Description of drawings
Fig. 1 is the sectional structure chart of embodiment of the invention clean wafer device;
Fig. 2 is the assembling assumption diagram of embodiment of the invention clean wafer device;
Fig. 3 is the application state structural representation of embodiment of the invention clean wafer device;
Fig. 4 is the transducer architecture sketch map of embodiment of the invention clean wafer device.
Among the figure: 1, piezoelectric crystal oscillator; 2, chamber; 3, air cooling fluid intake; 4, air cooling fluid issuing; 5, transducer; 51, cylinder; 52, micropore; 53, side mouth; 6, support unit; 7, flange.
Embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
With reference to figure 1-4; This clean wafer device comprises: piezoelectric crystal oscillator 1, be used to install the chamber 2 of piezoelectric crystal oscillator 1 and the transducer 5 that is fixedly connected with piezoelectric crystal oscillator 1; Have several protruding cylinders 51 on transducer 5 surfaces; 51 of cylinders have several micropores 52, and micropore 52 connects to the bottom of transducer 5.Piezoelectric crystal oscillator 1, the material of selecting for use is the aluminum zirconate titanate after handling through hyperpolarization.When applying the alternating current voltage of a frequency in the 700K-2MHZ scope for piezoelectric crystal oscillator 1; Piezoelectric crystal oscillator 1 produces mechanical oscillation under the alternating voltage effect; When the frequency of oscillation of alternating voltage equaled the natural mode shape of piezoelectric crystal oscillator 1 itself, the mechanical oscillation amplitude of this piezoelectric crystal oscillator 1 was maximum, in embodiments of the present invention; Piezoelectric crystal oscillator 1 is after the effect of alternating current voltage, and producing frequency is the mega sonic wave in the 700K-2MHZ scope; Piezoelectric crystal oscillator 1 is fixedly mounted in the chamber 2.
This transducer 5 is fixed on the piezoelectric crystal oscillator 1 through flange 7.Transducer 5 sides have a side mouth 53, are used for cleaning medium is imported transducer 5.Transducer 5 is placed with the distance of certain altitude with semiconductor wafer to be cleaned, has several millimeters space with semiconductor wafer.
This clean wafer device also comprises couplant and cleaning medium, and wherein, couplant adopts the mega sonic wave coupling material, and for example: can be the lower glue of fusing point, this medium can be multilayer.Couplant can be used as acoustic wave filter, and the mega sonic wave that piezoelectric crystal oscillator 1 is produced filters through couplant, makes its generation meet the sound wave of the megasonic frequency of cleaning requirement.Cleaning medium is the liquid that is used to corrode semiconductor wafer cleaning, is generally chemical liquid or ultra-pure water.Cleaning medium flows into from the side mouth 53 of transducer 5 sides, and then fills the upper space of full transducer 5, and then is full of in the micropore 52.The mega sonic wave that piezoelectric crystal oscillator 1 produces is delivered on the transducer 5 through cleaning medium.
This clean wafer device also comprises air cooling fluid intake 3, is used to introduce the air cooling fluid; Air cooling fluid issuing 4 is used for the airbleed cold fluid.The 3 gentle cold fluid outlets 4 of air cooling fluid intake are positioned at the relative both sides on cavity 2 tops, can the heat that piezoelectric crystal oscillator 1 produces under the dither effect be distributed through the 3 gentle cold fluid outlets 4 of air cooling fluid intake.
This clean wafer device also comprises support unit 6, is used to place semiconductor wafer, and in wafer cleaning procedure, support unit 6 can drive the semiconductor wafer of placing above it and horizontally rotate.Wherein, transducer 5 is positioned on the support unit 6, and has the certain gap position with support unit 6.
The wafer of indication includes but not limited to be IC wafer, CD, hard disk, LED (Light Emitting Diode in the embodiment of the invention; Light-emitting diode) display screen, TFTLCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-LCD) or other semiconductor applications wafers.
Specify the method for using of clean wafer device below.
At first, semiconductor wafer is placed on the support unit 6, transducer 5 is placed with the distance of certain altitude with semiconductor wafer to be cleaned, has several millimeters space with semiconductor wafer.
Secondly, the side mouth 53 of cleaning medium through transducer 5 is incorporated in transducer 5 upper spaces, and then the full transducer 5 whole upper spaces of cleaning medium filling, cleaning medium flows in the space through the outlet of micropore 52.Because there is tension force in the surface of liquid fluid, therefore, in burn into clean technology, this void space medium that can be cleaned is full of.
At last, rotation support unit 6, in burn into clean technology, semiconductor wafer is done always and is horizontally rotated along with support unit 6.Cleaning medium along with support unit 6 constantly rotates, can slowly be covered with the plane of support unit 6 through centrifugal action, overflows from the edge of support unit 6.
Apply a frequency behind the alternating voltage of 700K-2MHZ for piezoelectric crystal oscillator 1; Produce mechanical oscillation; Send the mega sonic wave that frequency is 700K-2MHZ, when this mega sonic wave passes through micropore 52, can produce a large amount of paralleling and uneven acoustic wave energy with micropore 52 axis.Therefore the vertical micropore 52 that passes of acoustic wave energy with micropore 52 axis parallel acts directly on the characteristic size sidewall, and this acoustic wave energy has compression to the characteristic size structure, the moment of flexure effect can not take place, clean wafer efficiently.Intersect meeting generation reflection, refraction and transmission repeatedly on the medium face of forming with the uneven acoustic wave energy of micropore 52 axis at cylinder 51 (solid state medium) and cleaning medium (liquid medium).Mega sonic wave through repeatedly reflection, transmission and refraction after, generation obtained greatly decay with the uneven acoustic wave energy of micropore 52 axis, on the contrary, the acoustic wave energy proportion ratio that parallels with micropore 52 axis improves greatly.Act on the uneven acoustic wave energy of micropore 52 axis and can be decomposed into the power vertical on the characteristic size and along the power of characteristic size parallel sidewalls with the characteristic size sidewall; The vibration that the power vertical with the characteristic size sidewall produces shows as the vibration moment of flexure, and the characteristic size structure is caused strong mechanical damage effect.And only the characteristic size structure is had compression with the power of characteristic size parallel sidewalls, and the moment of flexure effect can not take place, and then can not damage characteristic size structure itself.In the embodiment of the invention; Mega sonic wave is after the repeatedly reflection, transmission and the refraction that take place on the medium face of being made up of cylinder 51 and cleaning medium; Cut down largely and the uneven acoustic wave energy of micropore 52 axis; Thereby reduced moment of flexure effect, greatly reduced the characteristic size structural damage to the characteristic size structure.On the contrary, produce and only the characteristic size structure is had compression in a large number, and the moment of flexure effect can not take place, and then can not damage characteristic size structure itself with the power characteristic size parallel sidewalls; And the residue to actual plasma etching is left over has the shear action of physics, thereby has improved the removing effect to residue.
Clean wafer device of the present invention adopts has the transducer that connects micropore; Utilize the power of generation of mega sonic wave physical transfer principle and wafer feature size parallel sidewalls; Can not produce the effect of moment of flexure to the characteristic size structure; Farthest reduce and eliminate destruction, thereby improved chemical scavenging efficient residue to the wafer feature dimensional structure.
Above execution mode only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. a clean wafer device is characterized in that, comprising: piezoelectric crystal oscillator (1), be used to install the chamber (2) of said piezoelectric crystal oscillator (1) and the transducer (5) that is fixedly connected with said piezoelectric crystal oscillator (1),
Said transducer (5) surface has several protruding cylinders (51), has several micropores (52) between said cylinder (51), and said micropore (52) connects to the bottom of transducer (5).
2. clean wafer device as claimed in claim 1 is characterized in that, also comprises the gentle cold fluid outlet of the air cooling fluid intake (3) that is positioned at chamber (2) both sides, top (4).
3. clean wafer device as claimed in claim 1 is characterized in that, leaves the gap between said transducer (5) and the semiconductor wafer to be cleaned.
4. clean wafer device as claimed in claim 1 is characterized in that, it is the mega sonic wave of 700K-2MHZ that said piezoelectric crystal oscillator (1) produces frequency.
5. clean wafer device as claimed in claim 1 is characterized in that, said micropore (52) is any one shape in circular, oval, square or the rhombus.
6. clean wafer device as claimed in claim 1 is characterized in that, the diameter of said micropore (52) is the millimeter level, and the length of said micropore (52) is 5-10 times of its diameter.
7. clean wafer device as claimed in claim 6 is characterized in that, the spacing between said several micropores (52) is 1-2 a times of its diameter.
8. clean wafer device as claimed in claim 1 is characterized in that, has the side mouth (53) that imports cleaning medium on the side of said transducer (5).
9. like claim 1 or 8 described clean wafer devices, it is characterized in that said transducer (5) is that quartz, ruby or the macromolecular material with antiacid caustic corrosion are made.
10. clean wafer device as claimed in claim 1 is characterized in that, also comprises the rotary supporting unit (6) of placing semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010536700.4A CN102468117B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010536700.4A CN102468117B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102468117A true CN102468117A (en) | 2012-05-23 |
| CN102468117B CN102468117B (en) | 2015-05-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010536700.4A Active CN102468117B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning apparatus |
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| Country | Link |
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| CN (1) | CN102468117B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
| CN114345826A (en) * | 2021-12-28 | 2022-04-15 | 北京东方金荣超声电器有限公司 | Megasonic transmitting device for wafer cleaning and sonic cleaning system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276271A (en) * | 1999-05-25 | 2000-12-13 | 因芬尼昂技术北美公司 | Temp.-controlled degasification of deionized water in extremely ultrasonic cleaned semiconductor chip |
| US20040176483A1 (en) * | 2003-03-05 | 2004-09-09 | Micron Technology, Inc. | Cellular materials formed using surface transformation |
| KR20050051907A (en) * | 2003-11-28 | 2005-06-02 | 한국기계연구원 | An ultrasonic cleaning device and an ultrasonic cleaning system thereof |
| US20080017219A1 (en) * | 2006-07-12 | 2008-01-24 | Cole Franklin | Transducer assembly incorporating a transmitter having through holes, and method and system for cleaning a substrate utilizing the same |
| US20090231959A1 (en) * | 2007-11-06 | 2009-09-17 | Korbler John A | Composite transducer apparatus and system for processing a substrate and method of consturcting the same |
-
2010
- 2010-11-05 CN CN201010536700.4A patent/CN102468117B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276271A (en) * | 1999-05-25 | 2000-12-13 | 因芬尼昂技术北美公司 | Temp.-controlled degasification of deionized water in extremely ultrasonic cleaned semiconductor chip |
| US20040176483A1 (en) * | 2003-03-05 | 2004-09-09 | Micron Technology, Inc. | Cellular materials formed using surface transformation |
| KR20050051907A (en) * | 2003-11-28 | 2005-06-02 | 한국기계연구원 | An ultrasonic cleaning device and an ultrasonic cleaning system thereof |
| US20080017219A1 (en) * | 2006-07-12 | 2008-01-24 | Cole Franklin | Transducer assembly incorporating a transmitter having through holes, and method and system for cleaning a substrate utilizing the same |
| US20090231959A1 (en) * | 2007-11-06 | 2009-09-17 | Korbler John A | Composite transducer apparatus and system for processing a substrate and method of consturcting the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104646350A (en) * | 2015-02-12 | 2015-05-27 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device for graphic wafers |
| CN114345826A (en) * | 2021-12-28 | 2022-04-15 | 北京东方金荣超声电器有限公司 | Megasonic transmitting device for wafer cleaning and sonic cleaning system |
| CN114345826B (en) * | 2021-12-28 | 2023-01-03 | 北京东方金荣超声电器有限公司 | Megasonic transmitting device for cleaning wafer and sonic cleaning system |
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| Publication number | Publication date |
|---|---|
| CN102468117B (en) | 2015-05-27 |
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