CN102468117B - Wafer cleaning apparatus - Google Patents
Wafer cleaning apparatus Download PDFInfo
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- CN102468117B CN102468117B CN201010536700.4A CN201010536700A CN102468117B CN 102468117 B CN102468117 B CN 102468117B CN 201010536700 A CN201010536700 A CN 201010536700A CN 102468117 B CN102468117 B CN 102468117B
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- transducer
- crystal oscillator
- micropore
- piezoelectric crystal
- wafer
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Abstract
The invention relates to the semiconductor integrated circuit device cleaning technology field, especially relating to a wafer cleaning apparatus. The cleaning apparatus comprises a piezoelectric crystal oscillator, a cavity used for installing the piezoelectric crystal oscillator and an energy transducer which is in fixed connection with the piezoelectric crystal oscillator. A surface of the energy transducer has a plurality of raised cylinders, a plurality of micropores are provided among the cylinders, and the micropores penetrate to a bottom of the energy transducer. Through the energy transducer with the run-through micropores provided by the invention, by utilizing a megasonic physical transmission principle, acting force parallel to a wafer characteristic dimension sidewall is generated, no bending moment effect is generated to characteristic dimension, destroy of a wafer characteristic dimension structure is reduced and eliminated to the max, and chemical removing efficiency of residues is raised.
Description
Technical field
The present invention relates to semiconductor device cleaner technology field, particularly a kind of clean wafer device.
Background technology
Along with integrated circuit feature size enters into the deep-submicron stage, the requirement of the cleaning in integrated circuit (IC) wafer manufacturing process is also more and more higher.In recent years, introduce the clean wafer method of the high-frequency sound energy of employing million acoustic energy, although can effectively from wafer surface removing polluter by the device of million acoustic energy clean semiconductor wafers, but in clean process, the mega sonic wave mechanical vibrational energy produced in wafer surface due to mega sonic wave oscillator is unordered, thus create moment of flexure at the sidewall of device feature size, cause collapsing of lines, make the characteristic size structure of wafer surface can suffer serious destruction, have impact on the yields of wafer cleaning.Find in research, act on the moment of flexure that the vertical force on characteristic size sidewall is formed, the subject matter causing characteristic size to destroy, therefore, how farthest forming the acoustic wave energy active force paralleled along characteristic size sidewall is the key problem in technology solving selective corrosion residue not destructive characteristics dimensional structure again simultaneously.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is in making semiconductor device process, how to reach the requirement of clean wafers, and farthest reduces and eliminate the destruction to wafer feature dimensional structure.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of clean wafer device, comprise piezoelectric crystal oscillator 1, for installing the chamber 2 of piezoelectric crystal oscillator 1, and the transducer 5 be fixedly connected with piezoelectric crystal oscillator 1;
Transducer 5 surface has the cylinder 51 of several projections, has several micropores 52 between cylinder 51, the through bottom to transducer 5 of described micropore 52.
Further, the gentle cold fluid outlet 4 of air cooling fluid intake 3 of both sides, chamber 2 top is positioned at.
Further, gap is left between transducer 5 and semiconductor to be cleaned.
Further, piezoelectric crystal oscillator 1 produces the mega sonic wave that frequency is 700K-2MHZ.
Further, micropore 52 is circular, oval, square or any one shape in rhombus.
Further, the diameter of micropore 52 is grade, and the length of micropore 52 is micropore 52 diameter 5-10 times.
Further, the spacing between several micropores 52 is 1-2 times of micro-pore diameter.
Further, the side of transducer 5 has the side mouth 53 importing cleaning medium.
Further, transducer 5 is quartz, ruby or the macromolecular material with antiacid caustic corrosion.
Further, clean wafer device also comprises the rotatable support unit 6 placing semiconductor wafer.
(3) beneficial effect
Advantage of the present invention and beneficial effect are: clean wafer device of the present invention adopts the transducer with through micropore, mega sonic wave physical transfer principle is utilized to produce the acoustic wave energy active force parallel with wafer feature size sidewall, the effect of moment of flexure can not be produced to characteristic size, maximum reduction and the destruction of eliminating wafer feature dimensional structure, improve the chemical scavenging efficiency to residue.
Accompanying drawing explanation
Fig. 1 is the sectional structure chart of embodiment of the present invention clean wafer device;
Fig. 2 is the assembling assumption diagram of embodiment of the present invention clean wafer device;
Fig. 3 is the application state structural representation of embodiment of the present invention clean wafer device;
Fig. 4 is the transducer architecture schematic diagram of embodiment of the present invention clean wafer device.
In figure: 1, piezoelectric crystal oscillator; 2, chamber; 3, air cooling fluid intake; 4, air cooling fluid issuing; 5, transducer; 51, cylinder; 52, micropore; 53, side mouth; 6, support unit; 7, flange.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
With reference to figure 1-4, this clean wafer device comprises: piezoelectric crystal oscillator 1, for the chamber 2 of installing piezoelectric crystal oscillator 1 and the transducer 5 be fixedly connected with piezoelectric crystal oscillator 1, transducer 5 has several protruding cylinders 51 on the surface, there is several micropores 52, the through bottom to transducer 5 of micropore 52 between cylinder 51.Piezoelectric crystal oscillator 1, the material selected is the aluminum zirconate titanate after hyperpolarization process.When applying the alternating current voltage of a frequency in 700K-2MHZ scope for piezoelectric crystal oscillator 1, piezoelectric crystal oscillator 1 produces mechanical oscillation under alternating voltage effect, when the frequency of oscillation of alternating voltage equals the natural mode shape of piezoelectric crystal oscillator 1 itself, the mechanical oscillation amplitude of this piezoelectric crystal oscillator 1 is maximum, in embodiments of the present invention, piezoelectric crystal oscillator 1 is after the effect of alternating current voltage, and generation frequency is the mega sonic wave within the scope of 700K-2MHZ; Piezoelectric crystal oscillator 1 is fixedly mounted in chamber 2.
Transducer 5, is made up of quartz, ruby crystal or other macromolecular materials with antiacid caustic corrosion.Transducer 5 surface has the cylinder 51 of the projection that several are interspersed, and has the micropore 52 that several are interspersed between cylinder 51.This micropore 52 adopts the method for the molten quick-fried boring of laser to be formed, and internal stress is eliminated in the annealed process of each micropore 52.Micropore 52 can be circular, oval, square, rhombus or other geometries.The through bottom to transducer 5 of micropore 52, has the entrance importing medium and the outlet of deriving medium.The diameter of micropore 52 is grade, spacing between several micropores 52 is 1-2 times of micropore 52 diameter, the length of micropore 52 is 5-10 times of its diameter, the size design of above-mentioned micropore 52, ensure that exporting from micropore 52 medium fluid flowed out is in the far sound field of mega sonic wave.Due to the physical features of far sound field, the plane wave of the sidewall direction along characteristic size is formed under the outlet of micropore 52, the sound intensity of plane wave is under far sound field, acoustic interference effect reduces, effectively reduce mega sonic wave and interfere the energy hotspot caused, and then effectively increase the uniformity of megasonic energy distribution.
This transducer 5 is fixed on piezoelectric crystal oscillator 1 by flange 7.Transducer 5 side has side mouth 53, for being imported in transducer 5 by cleaning medium.Transducer 5 and semiconductor wafer to be cleaned are placed with the distance of certain altitude, there is the space of several millimeters with semiconductor wafer.
This clean wafer device also comprises couplant and cleaning medium, and wherein, couplant adopts mega sonic wave coupling material, and such as: can be the glue that fusing point is lower, this medium can be multilayer.Couplant can be used as acoustic wave filter, is filtered by the mega sonic wave that piezoelectric crystal oscillator 1 produces through couplant, makes it produce and meets the sound wave cleaning the megasonic frequency required.Cleaning medium is the liquid for corroding cleaning semiconductor wafer, is generally chemical liquid or ultra-pure water.Cleaning medium flows into from the side mouth 53 of transducer 5 side, and then fills the upper space of full transducer 5, and then is full of in micropore 52.The mega sonic wave that piezoelectric crystal oscillator 1 produces is delivered on transducer 5 by cleaning medium.
This clean wafer device also comprises air cooling fluid intake 3, for introducing air cooling fluid; Air cooling fluid issuing 4, for drawing air cooling fluid.The gentle cold fluid outlet of air cooling fluid intake 34 is positioned at the relative both sides on cavity 2 top, the heat that piezoelectric crystal oscillator 1 produces under dither effect can be distributed by air cooling fluid intake 3 gentle cold fluid outlet 4.
This clean wafer device also comprises support unit 6, and for placing semiconductor wafer, in wafer cleaning procedure, support unit 6 can drive the semiconductor wafer in the face of being placed on it to horizontally rotate.Wherein, transducer 5 is positioned on support unit 6, and there is certain clearance position with support unit 6.
In the embodiment of the present invention, the wafer of indication includes but not limited to as integrated circuit (IC) wafer, CD, hard disk, LED (Light Emitting Diode, light-emitting diode) display screen, TFTLCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-LCD) or other semiconductor applications wafers.
Illustrate the using method of clean wafer device below.
First, be placed on by semiconductor wafer on support unit 6, transducer 5 and semiconductor wafer to be cleaned are placed with the distance of certain altitude, there is the space of several millimeters with semiconductor wafer.
Secondly, be incorporated in transducer 5 upper space by the side mouth 53 of transducer 5 by cleaning medium, and then cleaning medium fills the full whole upper space of transducer 5, cleaning medium is flowed in space by the outlet of micropore 52.Because the surface of liquid fluid exists tension force, therefore, in burn into clean technique, this void space can be full of by cleaned medium.
Finally, rotary support unit 6, in burn into clean technique, semiconductor wafer horizontally rotates along with support unit 6 always.Cleaning medium, by centrifugal action, along with support unit 6 constantly rotates, slowly can be covered with the plane of support unit 6, overflow from the edge of support unit 6.
A frequency is applied after the alternating voltage of 700K-2MHZ to piezoelectric crystal oscillator 1, produce mechanical oscillation, send the mega sonic wave that frequency is 700K-2MHZ, when this mega sonic wave is by micropore 52, a large amount of paralleling and uneven acoustic wave energy with micropore 52 axis can be produced.The acoustic wave energy paralleled with micropore 52 axis passes perpendicularly through micropore 52, and act directly on characteristic size sidewall, this acoustic wave energy has compression to characteristic size structure, and moment of flexure effect can not occur, therefore can clean wafer efficiently.Reflection repeatedly, refraction and transmission can be there is on cylinder 51 (solid state medium) and the crossing medium face formed of cleaning medium (liquid medium) with the uneven acoustic wave energy of micropore 52 axis.Mega sonic wave is after reflection repeatedly, transmission and refraction, and obtaining with the uneven acoustic wave energy of micropore 52 axis of generation greatly decays, and on the contrary, the acoustic wave energy specific weight ratio paralleled with micropore 52 axis improves greatly.With the uneven acoustic wave energy of micropore 52 axis act on characteristic size can be decomposed into the power of characteristic size sidewalls orthogonal with along the parallel power of characteristic size sidewall, the vibration produced with the power of characteristic size sidewalls orthogonal shows as vibration moment of flexure, causes strong mechanical damage effect to characteristic size structure.And the power parallel with characteristic size sidewall only has compression to characteristic size structure, and moment of flexure effect can not be there is, and then can not damage characteristic size structure itself.In the embodiment of the present invention, after the multiple reflections that mega sonic wave occurs on the medium face be made up of cylinder 51 and cleaning medium, transmission and refraction, reduce largely and the uneven acoustic wave energy of micropore 52 axis, thus the moment of flexure effect reduced characteristic size structure, greatly reduce characteristic size structural damage.On the contrary, produce a large amount of power parallel with characteristic size sidewall and only to characteristic size structure, there is compression, and moment of flexure effect can not occur, and then can not damage characteristic size structure itself; And the residue that actual plasma etching is left over is had to the shear action of physics, thus improve the elimination effect to residue.
Clean wafer device of the present invention adopts the transducer with through micropore, mega sonic wave physical transfer principle is utilized to produce the power parallel with wafer feature size sidewall, the effect of moment of flexure can not be produced to characteristic size structure, maximum reduction and the destruction of eliminating wafer feature dimensional structure, thus improve the chemical scavenging efficiency to residue.
Above execution mode is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (3)
1. a clean wafer device, it is characterized in that, comprise: piezoelectric crystal oscillator (1), for the chamber (2) of installing described piezoelectric crystal oscillator (1) and the transducer (5) be fixedly connected with described piezoelectric crystal oscillator (1)
Described transducer (5) surface has the cylinder (51) of several projections, there are several micropores (52), the through bottom to transducer (5) of described micropore (52) between described cylinder (51);
Wherein, internal stress is eliminated in the annealed process of each micropore (52);
Also comprise air cooling fluid intake (3) the gentle cold fluid outlet (4) being positioned at chamber (2) both sides, top;
Gap is left between described transducer (5) and semiconductor wafer to be cleaned;
It is the mega sonic wave of 700K-2MHZ that described piezoelectric crystal oscillator (1) produces frequency;
The diameter of described micropore (52) is grade, and the length of described micropore (52) is 5-10 times of its diameter;
Spacing between described several micropores (52) is 1-2 times of its diameter;
The side of described transducer (5) has the side mouth (53) importing cleaning medium;
Also comprise the rotatable support unit (6) placing semiconductor wafer.
2. clean wafer device as claimed in claim 1, it is characterized in that, described micropore (52) is circular, oval, square or any one shape in rhombus.
3. clean wafer device as claimed in claim 1, is characterized in that, described transducer (5) is that quartz, ruby or the macromolecular material with antiacid caustic corrosion make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010536700.4A CN102468117B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010536700.4A CN102468117B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN102468117A CN102468117A (en) | 2012-05-23 |
| CN102468117B true CN102468117B (en) | 2015-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010536700.4A Active CN102468117B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning apparatus |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104646350B (en) * | 2015-02-12 | 2016-10-19 | 北京七星华创电子股份有限公司 | A kind of figure wafer not damaged cleans device |
| CN114345826B (en) * | 2021-12-28 | 2023-01-03 | 北京东方金荣超声电器有限公司 | Megasonic transmitting device for cleaning wafer and sonic cleaning system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276271A (en) * | 1999-05-25 | 2000-12-13 | 因芬尼昂技术北美公司 | Temp.-controlled degasification of deionized water in extremely ultrasonic cleaned semiconductor chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040176483A1 (en) * | 2003-03-05 | 2004-09-09 | Micron Technology, Inc. | Cellular materials formed using surface transformation |
| KR100523934B1 (en) * | 2003-11-28 | 2005-10-26 | 한국기계연구원 | An Ultrasonic Cleaning Device And An Ultrasonic Cleaning System Thereof |
| WO2008008921A2 (en) * | 2006-07-12 | 2008-01-17 | Akrion Technologies, Inc. | Tranducer assembly incorporating a transmitter having through holes, and method of cleaning |
| CN101918151B (en) * | 2007-11-06 | 2013-01-02 | 艾奎昂技术股份有限公司 | Composite transducer apparatus and system for processing a substrate and method of constructing the same |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276271A (en) * | 1999-05-25 | 2000-12-13 | 因芬尼昂技术北美公司 | Temp.-controlled degasification of deionized water in extremely ultrasonic cleaned semiconductor chip |
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| CN102468117A (en) | 2012-05-23 |
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