CN103736690B - silicon wafer cleaning method - Google Patents

silicon wafer cleaning method Download PDF

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Publication number
CN103736690B
CN103736690B CN201310753951.1A CN201310753951A CN103736690B CN 103736690 B CN103736690 B CN 103736690B CN 201310753951 A CN201310753951 A CN 201310753951A CN 103736690 B CN103736690 B CN 103736690B
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China
Prior art keywords
silicon wafer
cleaning method
frequency
frequency ultrasonic
power density
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CN201310753951.1A
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CN103736690A (en
Inventor
胡正军
姚嫦娲
周炜捷
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Shanghai IC R&D Center Co Ltd
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Shanghai Integrated Circuit Research and Development Center Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning

Abstract

Include: that silicon wafer to be cleaned is provided the invention discloses a kind of silicon wafer cleaning method, which is cleaned using the ultrasonic wave of multiple frequency.Different power is used to different ultrasonic frequencies in different scavenging period sections, so as to effectively enhance wet clean process window.

Description

Silicon wafer cleaning method
Technical field
The present invention relates to ic manufacturing technology field, in particular to a kind of method for suppersonic cleaning of silicon wafer.
Background technique
The cleaning process of semiconductor as the very development of semiconductor is there has also been huge variation, working method from batch to The type of one chip, medical fluid is also more and more.From traditional APM (SC1:NH4OH/H2O2/H2O), No. 2 liquid (HCl/H2O2/ H2O)、SPM(H2SO4/H2O2/H2O), a variety of special inorganic medical fluids are arrived again and are such as used for the medical fluid of wafer thinning, organic medical fluid, such as It removes photoresist ST-250, N-311 for the wet process after dielectric etch；And SST-A2, EKC medical fluid after aluminium etching etc..
The cleaning process of wet processing in the semiconductors is concentrated mainly on clear after cleaning and etching into before boiler tube It washes.Cleaning before into boiler tube is mainly used for removing particle and metal, organic contaminations of silicon chip surface etc..It is clear after etching It washes and is mainly used for removing photoresist bring polymer residue, the byproduct of reaction etc. of etching.
Ultrasonic cleaning is obtaining extensively since its cleaning efficiency is high, can save the features such as medical fluid in wet processing Application.Principle of the ultrasonic wave in wet clean process, mainly high-frequency oscillation signal are converted into High-frequency machine by energy converter Tool is vibrated and is traveled in cleaning medical fluid, and sound wave is strong and weak alternate, the weak sound wave meeting with sine curve longitudinal propagation in a liquid Certain negative pressure is generated to liquid, so that liquid volume increases, the molecule gap in liquid increases, and forms many small gas Bubble, and when strong acoustic signals act on liquid, then certain positive pressure can be generated to liquid, i.e., liquid volume, which is compressed, subtracts It is small, when the rupture of bubble in liquid can generate the great shock wave of energy, to play the role of cleaning.
With the development of semiconductor technology, characteristic size is smaller and smaller, and the requirement to ultrasonic wave is also higher and higher, it is desirable that drop The temporary impact that low bubbles burst generates, to reduce the damage to small scale structures.Common solution is to increase ultrasound The frequency of wave can reduce the volume of bubble in this way, or adjust ultrasonic transducer simultaneously at a distance from clean the surface, avoid gas The rupture of bubble.Frequency ultrasonic in semiconductor cleaning process can reach 3MHz at present.
Since there are a resonance frequencies for ultrasonic transducer, so being usually to fix a frequency in ultrasonic cleaning.When So also have using multiple frequencies, as can be by the design of shape, so as to select in United States Patent (USP) (US005581144A) The ultrasonic cleaning of high/low frequency, but a frequency can only be fixed every time and cleaned.It is right in United States Patent (USP) (US0013355) Batch, the mode of one chip propose the cleaning way of two kinds of frequencies, wherein being difference for two kinds of frequencies of the cleaning of one chip It loads at the edge and in the middle of silicon wafer, the disadvantage is that due to the characteristic that ultrasonic wave longitudinally transmits in medical fluid, in silicon chip edge Ultrasonic cleaning effect is limited.
Summary of the invention
In order to solve the above-mentioned technical problem the present invention, and provides a kind of one chip Wafer Cleaning side using multi-frequency ultrasonic Method, so that various contaminations, residual effectively after cleaning silicon wafer surface or etching in small structure, expand clean window.
Silicon wafer cleaning method of the invention includes: to provide silicon wafer to be cleaned, and the ultrasonic wave of multiple frequency is used to the silicon wafer It is cleaned.
Further, which is selected from low frequency 20KHz-1MHz, intermediate frequency 1MHz-2MHz and high frequency 2MHz- At least two frequencies in 3MHz.
Further, which includes continuous three scavenging period sections, and each scavenging period section is simultaneously with two The ultrasonic wave of kind frequency is cleaned.
Further, the power density of low-frequency ultrasonic waves used is 0.5-1.0W/cm in first time period2, high frequency ultrasound The power density of wave is 0.1-0.5W/cm2, and the power density of low-frequency ultrasonic waves is 3 times of high-frequency ultrasonic or more；When second Between in section the power density of low-frequency ultrasonic waves used be 0.1-0.5W/cm2, the power density of high-frequency ultrasonic is 0.3-1.0W/ cm2, and the power density of high-frequency ultrasonic is 3 times of low-frequency ultrasonic waves or more；Low-frequency ultrasonic waves used in the third period Power density < 0.1W/cm2, the power density of high-frequency ultrasonic is 0.1-1.0W/cm2。
Further, in entire scavenging period, first time period is 0-15 second, and second time period is 16-30 seconds, when third Between section be 31-50 seconds.
Further, the shape of supersonic generator used in the cleaning method is fan-shaped or bar shaped.
Further, the angle of the sector is 0-180 ° and is not 0 °.
Further, cleaning reagent used in the cleaning method is containing pure water, H2SO4、HCl、NH4OH、H2O2Middle one kind Or a variety of mix reagent.
Further, the rotation speed of silicon wafer is 100-1000rpm(revs/min in the cleaning method).
Further, which further includes the heating to cleaning reagent.
Silicon wafer cleaning method provided by the invention, to different ultrasonic frequencies using not in different scavenging period sections Same power, so as to effectively enhance wet clean process window.
Detailed description of the invention
For purpose, feature and advantage of the present invention can be clearer to understand, below with reference to attached drawing to preferable reality of the invention Example is applied to be described in detail, in which:
Fig. 1 is the flow diagram of silicon wafer cleaning method of the present invention；
Fig. 2 is the supersonic generator shape of first embodiment of the invention.
Specific embodiment
Referring to Fig. 1, the silicon wafer of the present embodiment selects the silicon substrate after over etching, cleaning reagent is SPM (H2SO4/ H2O2/H2O), the silicon wafer cleaning method of the present embodiment includes:
Silicon substrate to be cleaned is provided, is placed it on spin chuck, opening time control device, by nozzle by 120 DEG C SPM cleaning reagent be persistently injected on silicon substrate and cleaned；In cleaning process, carried out using the ultrasonic wave of multiple frequency clear It washes, the rotation speed of spin chuck is 500rpm(revs/min).
Wherein, the multiple frequency ultrasonic wave of the present embodiment is selected from low frequency 20KHz-1MHz, intermediate frequency 1MHz-2MHz and high frequency At least two frequencies in 2MHz-3MHz.Specifically, the present embodiment includes continuous three scavenging period sections, first time period The power density of low-frequency ultrasonic waves used is 0.5-1.0W/cm in (0-15 seconds)2, the power density of high-frequency ultrasonic is 0.1- 0.5W/cm2, and the power density of low-frequency ultrasonic waves is 3 times of high-frequency ultrasonic or more；Institute in second time period (16-30 seconds) It is 0.1-0.5W/cm with the power density of low-frequency ultrasonic waves2, the power density of high-frequency ultrasonic is 0.3-1.0W/cm2, and high frequency The power density of ultrasonic wave is 3 times of low-frequency ultrasonic waves or more；The function of low-frequency ultrasonic waves used in the third period (31-50 seconds) Rate density < 0.1W/cm2, the power density of high-frequency ultrasonic is 0.1-1.0W/cm2。
More specifically, the power density of 1MHz frequency ultrasonic wave was 0.1W/ at initial time section 5,7,10 seconds of cleaning cm2、0.2W/cm2、0.3W/cm2, the power density of 3MHz frequency ultrasonic wave is 0.9W/cm2、0.8W/cm2、0.7W/cm2；? 16,18,20 seconds when, the power density of 1MHz frequency ultrasonic wave is 0.1W/cm2、0.2W/cm2、0.3W/cm2, 3MHz frequency ultrasound The power density of wave is 0.9W/cm2、0.8W/cm2、0.7W/cm2；At 35,45,50 seconds, the power of 1MHz frequency ultrasonic wave was close Degree is 0W/cm2；The power density of 3MHz frequency ultrasonic wave is 1W/cm2。
By the change of three scavenging period sections, two kinds of frequency ultrasonic wave power densities, cleaning effect can be greatly improved, Remove various sizes of contamination.
In the present embodiment, the shape of supersonic generator is 30 ° of sector.In other embodiments, which may be used also To be the sector or bar shaped of other angles.
In other embodiments, silicon substrate to be cleaned can be plane also and can wrap such as double big containing structure after etching Ma Shige structure etc., the substrate can be selected from substrates such as N-type silicon substrate, P-type silicon substrate, silicon (SOI) on insulating layer.
In other embodiments, while cleaning silicon chip, cleaning reagent can be heated, it is clear to further increase Wash efficiency.

Claims (7)

1. a kind of silicon wafer cleaning method characterized by comprising provide silicon wafer to be cleaned, carry out continuous three to the silicon wafer The ultrasonic cleaning of a period, and each scavenging period section is cleaned simultaneously with the ultrasonic wave of two kinds of frequencies, when first Between in section the power density of low-frequency ultrasonic waves used be 0.5-1.0W/cm2, the power density of high-frequency ultrasonic is 0.1-0.5W/ cm2, and the power density of low-frequency ultrasonic waves is 3 times of high-frequency ultrasonic or more；Low-frequency ultrasonic waves used in second time period Power density is 0.1-0.5W/cm2, the power density of high-frequency ultrasonic is 0.3-1.0W/cm2, and the power of high-frequency ultrasonic is close Degree is 3 times of low-frequency ultrasonic waves or more；Power density < 0.1W/cm of low-frequency ultrasonic waves used in the third period2, high frequency is super The power density of sound wave is 0.1-1.0W/cm2, wherein the frequency range of low-frequency ultrasonic waves is 20KHz-1MHz, high-frequency ultrasonic Frequency range be 2MHz-3MHz.
2. silicon wafer cleaning method according to claim 1, it is characterised in that: supersonic generator used in the cleaning method Shape be fan-shaped or bar shaped.
3. silicon wafer cleaning method according to claim 2, it is characterised in that: the angle of the sector is 0-180 ° and is not 0°。
4. silicon wafer cleaning method according to claim 1, it is characterised in that: in entire scavenging period, first time period is 0-15 seconds, second time period was 16-30 seconds, and the third period is 31-50 seconds.
5. silicon wafer cleaning method according to claim 1, it is characterised in that: cleaning reagent used in the cleaning method is to contain There are pure water, H2SO4、HCl、NH4OH、H2O2In one or more mix reagent.
6. silicon wafer cleaning method according to claim 1, it is characterised in that: the rotation speed of silicon wafer is in the cleaning method 100-1000rpm。
7. silicon wafer cleaning method according to claim 1, it is characterised in that: the cleaning method further includes to cleaning reagent Heating.
CN201310753951.1A 2013-12-31 2013-12-31 silicon wafer cleaning method Active CN103736690B (en)

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US11752529B2 (en) 2015-05-15 2023-09-12 Acm Research (Shanghai) Inc. Method for cleaning semiconductor wafers
US10910244B2 (en) 2015-05-20 2021-02-02 Acm Research, Inc. Methods and system for cleaning semiconductor wafers
CN105344647B (en) * 2015-10-10 2017-09-19 南京信息工程大学 A kind of cleaning method of ice-nucleus sampling diaphragm
CN106653560B (en) * 2015-10-30 2020-08-21 东莞新科技术研究开发有限公司 Silicon wafer cleaning method
US20170213705A1 (en) * 2016-01-27 2017-07-27 Applied Materials, Inc. Slit valve gate coating and methods for cleaning slit valve gates
CN109075103B (en) 2016-04-06 2022-06-10 盛美半导体设备(上海)股份有限公司 Method and apparatus for cleaning semiconductor substrate
CN109789450B (en) 2016-09-19 2023-01-03 盛美半导体设备(上海)股份有限公司 Method and apparatus for cleaning substrate
CN109791899B (en) 2016-09-20 2023-06-16 盛美半导体设备(上海)股份有限公司 Substrate cleaning method and cleaning device
CN106925565B (en) * 2017-02-09 2018-08-24 同济大学 A kind of etch cleaner method of lbo crystal
US11581205B2 (en) 2017-11-20 2023-02-14 Acm Research, Inc. Methods and system for cleaning semiconductor wafers
CN108296216A (en) * 2018-04-03 2018-07-20 湖州五石科技有限公司 A kind of silicon wafer cleaning method
CN113441463A (en) * 2021-01-21 2021-09-28 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) Cleaning method

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