CN102623308A - Post chemical-mechanical polishing (CMP) cleaning method and CMP method - Google Patents
Post chemical-mechanical polishing (CMP) cleaning method and CMP method Download PDFInfo
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- CN102623308A CN102623308A CN2012100939078A CN201210093907A CN102623308A CN 102623308 A CN102623308 A CN 102623308A CN 2012100939078 A CN2012100939078 A CN 2012100939078A CN 201210093907 A CN201210093907 A CN 201210093907A CN 102623308 A CN102623308 A CN 102623308A
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Abstract
The invention provides a post chemical-mechanical polishing (CMP) cleaning method for polysilicon and a CMP method. The post CMP cleaning method provided by the invention comprises the steps that firstly, in a megasonic cleaning step, an H2O2-rich SC1 solution in which the mass percentage of NH4OH is 2.8 plus/minus 0.2 percent and the mass percentage of H2O2 is 3.0 plus/minus 0.2 percent is utilized to conduct megasonic cleaning; and afterwards, in a subsequent polyvinyl alcohol (PVA) brush cleaning step, NH4OH (ammonia water) and deionized water (DIW) are utilized to clean a wafer and brush the surface of the wafer. According to the post CMP cleaning method, the high concentration SC1 solution (in which the NH4OH serves as an etching agent) is utilized to improve the etching efficiency of a natural oxide layer, so that a better cleaning effect can be achieved; meanwhile, the H2O2 with higher concentration in the SC1 solution is utilized to oxidize the polysilicon to form the oxide layer, so that the natural oxide layer of a certain thickness can be generated on the surface of the polysilicon while the better effect is achieved, an organic pollutant layer cannot be formed on the polysilicon in the subsequent brush cleaning process, and the growth of the natural oxide layer of the polysilicon in the air cannot be influenced by pollutants on the polysilicon.
Description
Technical field
The present invention relates to semiconductor making method, more particularly, the chemical and mechanical grinding method of cleaning method after the present invention relates to cleaning method behind a kind of cmp and having adopted this cmp.
Background technology
For flash memory products, the source electrode polysilicon can form natural oxidizing layer after cmp.Can carry out eat-backing of source electrode polysilicon subsequently, this step has high selectivity to polysilicon and oxide, specifically approximately is 30: 1.Even a spot of natural oxidizing layer changes, also can greatly influence the etch-back amount of polysilicon, thereby cause the deviation of critical size.
Generally, in the air at room temperature, the growth of the natural oxidizing layer on the flash memory polysilicon surface is very fast, be easy to reach capacity, and very even.But, when the polysilicon surface of flash memory by when polluting, the growth of natural oxidizing layer will receive great influence based on organic pollutant (dust stains particle etc.).
Therefore, cleaning process is the key of eat-backing critical size control of source electrode polysilicon behind the cmp of source electrode polysilicon.
In the prior art, cleaning method adopts the combination of " mega sonic wave cleans (Megasonic) " and " PVA (cellular high polymer, polyvinyl alcohol) scrubs " behind the cmp.
Wherein, it is the high-frequency oscillation signal that is sent by the mega sonic wave generator that mega sonic wave cleans, and converts the high frequency mechanical oscillation to through transducer and propagates into medium; In the cleaning solvent mega sonic wave in cleaning fluid density interphase to previous irradiation, make liquid flow and produce ten hundreds of micro-bubbles, the micro-bubble (cavitation nucleus) that is present in the liquid vibrates under the effect of sound field; When acoustic pressure reaches certain value; Bubble increases rapidly, and is closed suddenly then, when bubble is closed, produces shock wave; Produce thousands of atmospheric pressures around it, destroy insoluble dirt and they are scattered in the cleaning fluid.Specifically, the mega sonic wave mechanism of cleaning is by frequently shake effect and combine the chemical reaction of chemical that wafer is cleaned of high energy (for example 850kHz).When cleaning, send wavelength and be about the high energy sound wave that 1.5 μ m frequencies are about 0.8MHz by transducer.Solution molecule is done accelerated motion under the promotion of this sound wave, maximum instantaneous velocity can reach 30cm/s.Therefore, with fluid wave bump wafer surface at a high speed, pollutant and the fine particles of polished silicon wafer surface attachment are forced remove and enter into cleaning fluid.Mega sonic wave cleaning polishing sheet can remove on the wafer surface less than the particle of 0.2 μ .m, plays the effect that ultrasonic wave does not have.This method can play the effect that machinery is wiped sheet and two kinds of methods of chemical cleaning simultaneously.
On the other hand, PVA scrubs and at first utilizes NH
4OH comes cleaning wafer (NH
4OH is simultaneously to SIO
2Possess certain corrosivity), thus the adhesive force that electrically reduces to stain particle that the chemical agent of alkalescence can make contamination particle and crystal column surface produce to repel each other; After this, PVA scrubs to contact with the physics of wafer through brush and scrubs, thereby removes the contamination particle above the wafer.
But, clean behind the cmp for the source electrode polysilicon, through NH
4The wafer of OH or standard SCl will keep clean polysilicon surface; Perhaps only form less oxide layer at polysilicon surface; Like this; PVA subsequently scrubs in the cleaning step, because the organic contamination particle on the PVA brush is easy to be bonded on the clean polysilicon surface, pollutes so can cause again.
Summary of the invention
Technical problem to be solved by this invention is to having above-mentioned defective in the prior art, the organic contamination particle of a kind of effective removal is provided and the chemical and mechanical grinding method of cleaning method after can not causing cleaning method behind the cmp of the polysilicon surface that pollutes again and having adopted this cmp.
According to a first aspect of the invention, cleaning method behind a kind of cmp is provided, it comprises: at first, in the mega sonic wave cleaning step, utilize NH
4The mass percent of OH is 2.8+/-0.2%, H
2O
2Mass percent be that the SCl solution of 3.0+/-0.2% carries out mega sonic wave and cleans; After this, scrub in the step, utilize NH at PVA
4OH (ammoniacal liquor) and DIW (deionized water) cleaning wafer are also scrubbed crystal column surface.
Preferably, cleaning method is used for cleaning behind the cmp of source electrode polysilicon of MOS device behind the said cmp.
Wherein, the etching agent in the SCl solution is NH
4OH.
Preferably, in the cleaning method, cleaning method has adopted the mega sonic wave cleaning step to scrub combining of step with PVA behind the said cmp behind above-mentioned cmp.
Preferably, cleaning method is used for cleaning behind the cmp of source electrode polysilicon of MOS transistor behind the said cmp.
According to a second aspect of the invention, cleaning method behind a kind of cmp is provided, has it is characterized in that having adopted according to cleaning method behind the described cmp of first aspect present invention.
The present invention utilizes high concentration SCl to improve the etching efficient to natural oxidizing layer, can obtain better cleaning performance thus, utilizes the higher concentration among the SCl (to be rich in H simultaneously
2O
2) H
2O
2Come the oxidation polysilicon to form oxide layer; Thereby guarantee obtaining also can to generate certain thickness natural oxidizing layer in the cleaning performance preferably at polysilicon surface; Make follow-up brush can on polysilicon, not form pollution, thereby can not influence the growth of the aerial natural oxidizing layer of polysilicon owing to the pollution on the polysilicon.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the sketch map according to cleaning method behind the cmp of the present invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
In the prior art, the NH in the SCl solution
4The mass percent of OH is generally 2.0%+/-0.2%, H
2O
2Mass percent be generally 2.0%+/-0.2%.Wherein, the etching agent in the SCl solution is NH
4OH.
Different with the above-mentioned concentration of prior art is the NH in the SCl solution
4The mass percent of OH changes 2.8+/-0.2% into; H
2O
2Mass percent change 3.0+/-0.2% into.
That is, after according to the cmp of the embodiment of the invention, in the cleaning method, at first, in the mega sonic wave cleaning step, utilize NH
4The mass percent of OH is 2.8+/-0.2%, H
2O
2Mass percent be that the SCl solution of 3.0+/-0.2% carries out mega sonic wave and cleans; After this, scrub in the step, utilize said SCl solution cleaning wafer and scrub crystal column surface at PVA.
Thus, there is reactions in cleaning behind the cmp of source electrode polysilicon meeting:
Wherein, reaction equation (1) expression H
2O
2Decomposition; The oxidation of reaction equation (2) expression polysilicon; Reaction equation (3) expression NH
4The decomposition of OH; Reaction equation (4) expression OH
-To silicon dioxide SiO
2Etching.
Fig. 1 schematically shows the sketch map according to cleaning method behind the cmp of the present invention.
As shown in Figure 1, after according to the cmp of the embodiment of the invention in the cleaning method, H
2O
2The HO that decomposites
2 -To polysilicon oxidation 1, to generate silicon dioxide SiO
2On the other hand, NH
4The OH that OH decomposes
-To silicon dioxide SiO
2Carry out etching 2.
Therefore, behind the cmp of the embodiment of the invention, in the cleaning method, utilize high concentration SCl to improve etching efficient, can obtain better cleaning performance thus, utilize the higher concentration among the SCl (to be rich in H simultaneously natural oxidizing layer
2O
2) H
2O
2Come the oxidation polysilicon to form oxide layer; Thereby guarantee obtaining also can to generate certain thickness natural oxidizing layer in the cleaning performance preferably at polysilicon surface; Make follow-up brush can on polysilicon, not form pollution, thereby can not influence the growth of the aerial natural oxidizing layer of polysilicon owing to the pollution on the polysilicon.
Cleaning method is particularly suitable for being used for cleaning behind the cmp of source electrode polysilicon of MOS transistor behind the above-mentioned cmp.
Preferably, in cleaning method preferred embodiment, cleaning method has adopted the mega sonic wave cleaning step to scrub combining of step with PVA behind the said cmp behind cmp of the present invention.That is, cleaning method is also carried out the mega sonic wave cleaning step behind the cmp of the present invention except PVA scrubs step.
According to another embodiment of the present invention, the invention still further relates to the chemical and mechanical grinding method that has adopted cleaning method behind the above-mentioned cmp.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (5)
1. cleaning method behind the cmp is characterized in that comprising:
At first, in the mega sonic wave cleaning step, utilize NH
4The mass percent of OH is 2.8+/-0.2%, H
2O
2Mass percent be that the SCl solution of 3.0+/-0.2% carries out mega sonic wave and cleans; After this, scrub in the step, utilize NH at PVA
4OH (ammoniacal liquor) and DIW (deionized water) cleaning wafer are also scrubbed crystal column surface.
2. cleaning method behind the cmp according to claim 1 is characterized in that, cleaning method is used for cleaning behind the cmp of source electrode polysilicon of MOS device behind the said cmp.
3. cleaning method behind the cmp according to claim 1 and 2 is characterized in that, the etching agent in the SCl solution is NH
4OH.
4. cleaning method behind the cmp according to claim 1 and 2 is characterized in that, cleaning method is used for cleaning behind the cmp of source electrode polysilicon of MOS transistor behind the said cmp.
5. cleaning method behind the cmp is characterized in that having adopted cleaning method behind the cmp according to claim 1 and 2.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100939078A CN102623308A (en) | 2012-03-31 | 2012-03-31 | Post chemical-mechanical polishing (CMP) cleaning method and CMP method |
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|---|---|---|---|
| CN2012100939078A CN102623308A (en) | 2012-03-31 | 2012-03-31 | Post chemical-mechanical polishing (CMP) cleaning method and CMP method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140370696A1 (en) * | 2013-06-13 | 2014-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for forming oxide layer over exposed polysilicon during a chemical mechanical polishing (cmp) process |
| CN104742007A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(北京)有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method |
| CN111863592A (en) * | 2019-04-29 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | Post-polish cleaning method and method for forming semiconductor structure |
| CN113140446A (en) * | 2021-04-02 | 2021-07-20 | 杭州中欣晶圆半导体股份有限公司 | Method for improving pit defect of LTO back-sealed silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050066116A (en) * | 2003-12-26 | 2005-06-30 | 동부아남반도체 주식회사 | Wafer feeding unit with megasonic nozzle in chemical mechanical polishing device |
| CN101661869A (en) * | 2008-08-25 | 2010-03-03 | 北京有色金属研究总院 | Method for cleaning polished gallium arsenide chip and laundry drier |
| CN102064090A (en) * | 2010-10-15 | 2011-05-18 | 北京通美晶体技术有限公司 | Method for cleaning compound semiconductor chip |
| CN102371525A (en) * | 2010-08-19 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Polishing device |
-
2012
- 2012-03-31 CN CN2012100939078A patent/CN102623308A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050066116A (en) * | 2003-12-26 | 2005-06-30 | 동부아남반도체 주식회사 | Wafer feeding unit with megasonic nozzle in chemical mechanical polishing device |
| CN101661869A (en) * | 2008-08-25 | 2010-03-03 | 北京有色金属研究总院 | Method for cleaning polished gallium arsenide chip and laundry drier |
| CN102371525A (en) * | 2010-08-19 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Polishing device |
| CN102064090A (en) * | 2010-10-15 | 2011-05-18 | 北京通美晶体技术有限公司 | Method for cleaning compound semiconductor chip |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140370696A1 (en) * | 2013-06-13 | 2014-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for forming oxide layer over exposed polysilicon during a chemical mechanical polishing (cmp) process |
| US9711374B2 (en) * | 2013-06-13 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for forming oxide layer over exposed polysilicon during a chemical mechanical polishing (CMP) process |
| CN104742007A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(北京)有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method |
| US9950405B2 (en) | 2013-12-30 | 2018-04-24 | Semiconductor Manufacturing International (Beijing) Corporation | Chemical mechanical planarization apparatus and methods |
| CN111863592A (en) * | 2019-04-29 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | Post-polish cleaning method and method for forming semiconductor structure |
| CN111863592B (en) * | 2019-04-29 | 2023-11-10 | 中芯国际集成电路制造(上海)有限公司 | Post-polish cleaning method and method for forming semiconductor structure |
| CN113140446A (en) * | 2021-04-02 | 2021-07-20 | 杭州中欣晶圆半导体股份有限公司 | Method for improving pit defect of LTO back-sealed silicon wafer |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120801 |