CN101661869A - Method for cleaning polished gallium arsenide chip and laundry drier - Google Patents
Method for cleaning polished gallium arsenide chip and laundry drier Download PDFInfo
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- CN101661869A CN101661869A CN200810118475A CN200810118475A CN101661869A CN 101661869 A CN101661869 A CN 101661869A CN 200810118475 A CN200810118475 A CN 200810118475A CN 200810118475 A CN200810118475 A CN 200810118475A CN 101661869 A CN101661869 A CN 101661869A
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Abstract
The invention discloses a method for cleaning a polished gallium arsenide chip, which comprises the following steps: (1) ultrasonic cleaning; (1) washing with concentrated sulfuric acid: placing a polished chip in 98 percent concentrated sulfuric acid at 70 to 100 DEG C for washing, then quickly taking the polished chip out and placing the polished chip in to 98 percent concentrated sulfuric acidat normal temperature for washing, and finally washing the polished chip with deionized water; (3) washing with alkaline solution; (4) drying the polished chip; and (5) detecting the polished chip under a halogen light with a light intensity more than or equal to 8,000 luxes. The method has the advantages of effectively cleaning wax points, dusts, stains on the surface of a chip, more effectivelycleaning residual gallium oxides, arsenoxides and some metals harmful to follow-up processes on the surface of the chip, along with low cost, simplicity, practicality and high maneuverability. Thereof, the method can obtain a high quality gallium arsenide (GaAs) surface and meet the requirements on 'immediate use after opening the box'.
Description
Technical field
The invention provides cleaning method and drier after the wax paster polishing of a kind of GaAs (GaAs) wafer.
Technical background
Arsenide gallium monocrystal is the leading material in the present III-V compound semiconductor, uses quite extensive.GaAs has become a kind of important microelectronics and photoelectron basic material at present, is widely used in third generation mobile, optical-fibre communications, automotive electronics, fields such as satellite communication and global positioning system.GaAs (GaAs) wafer is mainly due to making GaAs devices such as high brightness luminescent pipe (LED), semiconductor laser (LD), photoelectron integrated (OEIC), high-effect solar cell, optotransistor, GaAs (GaAs) digital circuit, microwave monolithic circuit.The superior performance of GaAs is embodied by high-quality wafer surface, and surface chemistry mechanical polishing (CMP) and cleaning are to carry out the preceding critical process of next step extension of GaAs (GaAs).Production in enormous quantities along with device and circuit, in order to enhance productivity, to reduce cost, must use GaAs (GaAs) substrate wafer of high-quality surface, only removing staining of polished silicon wafer surface no longer is final requirement, and metal, organic pollutants and the oxide layer of removing wafer surface are also very important.
Summary of the invention
The cleaning method that the purpose of this invention is to provide a kind of GaAs polished silicon wafer, this method cost is low, simple and practical, workable, can effectively clear up wax point, dust, the dirty point of wafer surface, more can effectively clear up and polish gallium oxide, arsenic oxide that remains in wafer surface and the metal that some are harmful to subsequent technique, thereby obtain high-quality GaAs (GaAs) surface, reach the requirement of " opening box promptly uses ".
For achieving the above object, the present invention by the following technical solutions:
The cleaning method of this GaAs polished silicon wafer comprises following step:
(1), ultrasonic waves for cleaning:
1. prepare cleaning fluid, wherein, the consumption volume ratio of ultrasonic cleaning agent and deionized water is (1～5): (6～10), and need stir during preparation, and heat to 70-100 ℃,
2. ultrasonic waves for cleaning is put into supersonic wave cleaning machine with polished silicon wafer and is cleaned,
3. use deionized water rinsing;
(2), the concentrated sulfuric acid cleans:
1. the concentrated sulfuric acid (98%) of then polished silicon wafer being put into 70-100 ℃ cleans,
2. propose to put into the concentrated sulfuric acid (98%) cleaning of normal temperature then rapidly,
3. cleaned the back deionized water rinsing;
(3), alkali lye cleans:
1. prepare alkali lye, the volume ratio of its alkali lye is NH
4OH: H
2O
2: H
2O=(1～5): (1～5): (6～12),
NH wherein
4The original concentration of OH is 25% (with NH
3Meter), H
2O
2Original concentration be 30%, stir, be cooled to 0-5 ℃ with frozen water,
2. cleaned the back deionized water rinsing;
(4), polished silicon wafer is dried;
(5), under halogen light modulation, detect polished silicon wafer more than or equal to the 8000lux light intensity.
The condition that dries is on 10 grades ultra-clean chamber fume hood.
Described ultrasonic waves for cleaning number of times can be 2-5 time, is 2-5 minute at every turn.
Drier comprises: have the support of motor, motor shaft is connected with the centre bore of the drying head that is positioned at the top by connecting joint, and described drying head is cylindrical, the uniform fluid hole of its end face.
Advantage of the present invention is: cost is low, simple and practical, workable, can effectively clear up wax point, dust, the dirty point of wafer surface, more can effectively clear up and polish gallium oxide, arsenic oxide that remains in wafer surface and the metal that some are harmful to subsequent technique, thereby obtain high-quality GaAs (GaAs) surface, reach the requirement of " opening box promptly uses ".
Description of drawings
Fig. 1: polished silicon wafer cleaning process figure
Fig. 2 a: the drying of a drier of the present invention front view
Fig. 2 b: the vertical view of Fig. 2 a
Among Fig. 1, include: ultrasonic waves for cleaning, usefulness deionized water rinsing, hot sulfuric acid cleaned, cold sulfuric acid cleaned, usefulness deionized water rinsing, alkali lye clean, use operations such as deionized water rinsing, drying, detection, the qualified packing after the detection, and defective item is done over again.Among Fig. 2 a, Fig. 2 b, 1 for drying a body, and cylindrical, its end face has sawtooth 2, and the lower central that dries a body has a centre bore 3.
Embodiment
Embodiment 1:
Present embodiment carries out according to the following steps:
One, clean:
(1), the preparatory process of ultrasonic waves for cleaning: during the preparation cleaning fluid, can prepare 3 quartz cell and join cleaning fluid, then these 3 quartz cell are placed in the rinse bath of the 1st supersonic wave cleaning machine, inject appropriate amount of deionized water (not covering quartz cell) in the ultrasonic bath, 70-100 ℃ of heating is transferred in the temperature setting, after temperature reaches requirement, stop heating.In the 2nd supersonic wave cleaning machine, put into 2 quartz cell that fill deionized water, inject appropriate amount of deionized water (not covering quartz cell) in the same ultrasonic bath, temperature is set to 70-100 ℃ of heating, after temperature reaches requirement, keep constant temperature.
This supersonic wave cleaning machine is semiconductor special cleaning machine (peace peak science-and-technology enterprise Co., Ltd produces, and BCCPO-900U), cleaning agent is the semiconductor scavenger specially, is used for the clear DZ-4B series of production process of semiconductor rosin and paraffin)
(2), ultrasonic waves for cleaning: the gaily decorated basket that polished silicon wafer will be housed, put into the 1st quartz cell that cleaning agent is housed of the 1st supersonic wave cleaning machine, opening supersonic switch cleans, at the uniform velocity carry the gaily decorated basket in the ultrasonic waves for cleaning process, clean 2-5min, propose the gaily decorated basket then rapidly and put into the 2nd the quartz cell cleaning (method is with the 1st groove) that cleaning agent is housed, in air, do not stop, in like manner clean 2-5min, propose the gaily decorated basket once more and put into the 3rd the quartz cell cleaning (method is with the 1st groove) that cleaning agent is housed, in like manner clean 2-5min.
(3) use deionized water rinsing.When wafer clean the 3rd groove intact after, the gaily decorated basket is proposed rapidly, put into the 1st quartz cell that deionized water is housed of the 2nd supersonic wave cleaning machine and clean 2～5min, put into the quartz cell deionized water rinsing that another removes to be equipped with deionized water then, in quartz cell, there has not been foam, from supersonic wave cleaning machine, take out the quartz cell that wafer is housed then, wafer is immersed in the deionized water, do not propose quartz cell.
Two, acid solution is cleaned:
1. dosing is prepared.Prepare 3 quartz cell earlier, prepare the two groove concentrated sulfuric acids (98%) in fume hood, a groove is placed on is heated to 70-100 ℃ on the electric furnace, the temperature remains within the normal range for another groove concentrated sulfuric acid, a more other dead slot filled with deionized water.
2. hot acid cleans.Be immersed in the gaily decorated basket that wafer is housed in the deionized water after the taking-up ultrasonic waves for cleaning, take out first and clamp with wafer clamp, put into the quartz cell that hot concentrated sulfuric acid is housed and clean, the time is 30～40s.
3. cold acid is cleaned.After the hot acid scavenging period arrives, propose wafer rapidly, put into the quartz cell that normal temperature (25 ℃) concentrated sulfuric acid is housed and clean, the time is 5～10s.Note reducing the passing time between the cold acid of heat, action is wanted rapidly as far as possible.
4. use deionized water rinsing.After having cleaned in the cold acid, take out wafer rapidly, put into the quartz cell that deionized water is housed and wash, time 1～5min.
Three, alkali lye cleans:
1. dosing is prepared.Prepare 2 quartz cell, be placed in the fume hood, a groove is injected deionized water, another groove is according to following volume ratio: NH
4OH: H
2O
2: H
2O=(1～5): (1～5): (6～12) preparation alkali lye, stir, the quartz cell of preparing alkali lye is placed on is cooled to 0-5 ℃ and maintenance always in the frozen water.Attention, it is longer that alkali lye drops to 0-5 ℃ of required time by normal temperature, therefore should just alkali lye be prepared before wafer cleans, and is kept in the frozen water to keep 0-5 ℃ always.
2. alkali lye cleans.Take out the wafer that is immersed in after previous step has been washed in the deionized water rapidly, put into lye tank (vat) and clean, evenly shake time 3～10s
3. use deionized water rinsing.After having cleaned in the alkali lye, take out wafer rapidly, put into the quartz cell that deionized water is housed and wash, time 1～5min.
Four, dry:
1. machine is prepared.
Drier is: form by small soya-bean milk machine (fast mixer, the model KD-308E of getting) transformation.Remove mixer the first half, stay the motor center axle, change the drying head of the suitable wafer size of our spontaneous development, drying head is according to wafer size, customized with white plastic PE.A situation of drying such as accompanying drawing (2).
2. spin-drying operation.Drying head with suitable wafer size is contained on the drier, takes out the wafer that is immersed in after previous step has been washed in the deionized water then rapidly, unloads lower wafer, is placed on to dry on the head, opens the drier switch, dries wafer, time 10～40s.
3. get sheet.Take off wafer with picture-taking device, put into box at the bottom of the wafer packaging box, need not lid, to be detected.Five, detect packing:
1. checkout equipment is prepared.(the Metal halogen lamp light source, model: JLD-III) power supply, (60s) after a while makes it luminous normal, with the illuminance meter test, sets halogen light modulation luminous intensity more than or equal to 8000lux to open the halogen light modulation.100～300 power microscopes are set, and (OLYMPUS, model: BH2-UMA) details in a play not acted out on stage, but told through dialogues is observed down, arrives the appropriate location with print debugging microscope.Debugging TXRF total reflection X-ray fluorescence analysis instrument (Beijing Puxi General Instrument Co., Ltd's production) is prepared to detect.
2. detect.The end box that wafer is housed is placed on observation under the halogen light modulation, rock polished silicon wafer and detect whole polished surface, observe and whether to stain, cut, orange peel, collapse limit, mist, further being placed on microscopically observes, whether wafer surface has cut apart from edge 3mm with interior, the wafer that is difficult situation is qualified, otherwise defective.If wafer is twin polishing, during detection, need to aim at box at the bottom of the another one, the wafer back-off is come, continue to detect reverse side then, tow sides have one side defective, and then wafer is defective.Analyze wafer surface metallic pollution situation with TXRF then.
3. pack.Qualified wafer is covered lid, and sequence is put on label; Underproof wafer is done over again or is cancelled.
Noticeable place is: 1. the lustration class in the operational environment is 100 grades, and the operation fume hood is 10 grades.2. employed clear water is a high-purity deionized water, and the employed gaily decorated basket, handle, wafer clamp, quartz cell all should be pollution-free, clean.3. in ultrasonic waves for cleaning, acid solution cleaning and alkali lye cleaning process, should reduce the aerial time of staying of wafer as far as possible, be swift in motion, prevent that wafer is oxidized in air.4. operating personnel must wear garment for clean room, shoe cover, wear masks, cap, rubber gloves.
Experimental result: dry the back and detect the wafer surface serious corrosion, alkali lye should be cooled to 0-5 ℃, avoid the high alkali liquid corrosion of temperature too fast.
Comparative Examples 1
(1) polished silicon wafer is placed in the quartz cell cleaning agent, puts into supersonic wave cleaning machine again and clean, temperature is heated to 90 ℃, removes the wax layer, uses deionized water rinsing.
(2) then polished silicon wafer is put into normal temperature (25 ℃) dilute sulfuric acid and cleaned, use deionized water rinsing after having cleaned.
(3) polished silicon wafer is put into alkali lye (0 ℃) NH
4OH: H
2O
2: H
2O=(1～5): (1～5): clean in (6～12), use deionized water rinsing after having cleaned.
(4) polished silicon wafer is dried.
(5) analyze with TXRF total reflection X-ray fluorescence analysis instrument.
Experimental result: analyze the wafer surface situation with TXRF total reflection X-ray fluorescence analysis instrument, learn that metallic pollution is more serious, should in (2) step, be heated to 70-100 ℃ of clean wafers with the concentrated sulfuric acid (98%) earlier, use the normal temperature concentrated sulfuric acid (98%) to clean again.
Claims (4)
1, a kind of cleaning method of gallium arsenide wafer, it is characterized in that: it may further comprise the steps:
(1), ultrasonic waves for cleaning:
1. prepare cleaning fluid, wherein, the consumption volume ratio of ultrasonic cleaning agent and deionized water is (1～5): (6～10), and need stir during preparation, and heat to 70-100 ℃,
2. ultrasonic waves for cleaning is put into supersonic wave cleaning machine with polished silicon wafer and is cleaned,
3. use deionized water rinsing;
(2), the concentrated sulfuric acid cleans:
1. the concentrated sulfuric acid (98%) of then polished silicon wafer being put into 70-100 ℃ cleans,
2. propose to put into the concentrated sulfuric acid (98%) cleaning of normal temperature then rapidly,
3. cleaned the back deionized water rinsing;
(3), alkali lye cleans:
1. prepare alkali lye, the volume ratio of its alkali lye is NH
4OH: H
2O
2: H
2O=(1～5): (1～5): (6～12), wherein NH
4The original concentration of OH is 25% (with NH
3Meter), H
2O
2Original concentration be 30%, stir, be cooled to 0-5 ℃ with frozen water,
2. cleaned the back deionized water rinsing;
(4), polished silicon wafer is dried;
(5), under halogen light modulation, detect polished silicon wafer more than or equal to the 8000lux light intensity.
2, the cleaning method of a kind of gallium arsenide wafer according to claim 1 is characterized in that: the condition of drying is on 10 grades ultra-clean chamber fume hood.
3, the cleaning method of a kind of gallium arsenide wafer according to claim 1 is characterized in that: described ultrasonic waves for cleaning number of times is 2-5 time, is 2-5 minute at every turn.
4, the drier that is used for the cleaning method of the described a kind of gallium arsenide wafer of claim 1, it is characterized in that: it comprises: the support that has motor, motor shaft is connected with the centre bore of the drying head that is positioned at the top by connecting joint, and described drying head is cylindrical, the uniform fluid hole of its end face.
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|---|---|---|---|
| CN2008101184755A CN101661869B (en) | 2008-08-25 | 2008-08-25 | Method for cleaning polished gallium arsenide chip |
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|---|---|---|---|
| CN2008101184755A CN101661869B (en) | 2008-08-25 | 2008-08-25 | Method for cleaning polished gallium arsenide chip |
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| CN101661869B CN101661869B (en) | 2012-06-13 |
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