CN209000881U - Si base HgCdTe device for cleaning chip before a kind of passivation - Google Patents
Si base HgCdTe device for cleaning chip before a kind of passivation Download PDFInfo
- Publication number
- CN209000881U CN209000881U CN201821920845.2U CN201821920845U CN209000881U CN 209000881 U CN209000881 U CN 209000881U CN 201821920845 U CN201821920845 U CN 201821920845U CN 209000881 U CN209000881 U CN 209000881U
- Authority
- CN
- China
- Prior art keywords
- carbon dioxide
- cleaning
- chip before
- storage tank
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model discloses Si base HgCdTe device for cleaning chip before a kind of passivation.The device includes carbon dioxide storage tank (1), and carbon dioxide storage tank (1) is connected to clean room (5) by cooler (2), delivery pump (3) and thermoconverter (4)；Contain movable nozzle (6), chip carrier (7), pressure controller (8), light-intensity test mechanism (10) in clean room (5)；Light-intensity test mechanism (10) connects a processor (15)；The outlet connection of clean room (5) passes through carbon dioxide separation slot (12) connection carbon dioxide storage tank (1).The utility model can overcome the shortcomings of that traditional-handwork cleaning is passivated preceding Si base HgCdTe chip technology, shorten scavenging period, avoid the use of poisonous and harmful organic solvent, reduce the technical requirements to operator, so that the cleaning to chip turns to automation, while supercritical carbon dioxide high diffusibility, highly dissoluble and environmentally protective feature are also given full play to.
Description
Technical field
The utility model is to be related to a kind of device for cleaning chip, concretely relates to Si base HgCdTe core before a kind of passivation
Piece cleaning device.
Background technique
Often remaining pollution has Si base HgCdTe chip surface before passivation: wax, watermark, greasy dirt and slag etc..It passes at present
The Si base HgCdTe chip surface passivation cleaning process of system, which relies primarily on, to be had been manually done, and road plan is easily introduced in wiping process, is caused
Mercury cadmium telluride permanent damage forms blind element；Meanwhile wiping process repeatability is poor by hand, there are the removals of chip surface pickup not
The case where thoroughly and remaining watermark；And the cleaning process period is long, greatly reduces the efficiency of production.In addition, traditional handicraft exists
Need to use a large amount of poisonous and hazardous organic solutions in cleaning process, treatment cost of waste liquor is high, and to the disagreeableness one side of environment
It is unfavorable for long term growth.Therefore it is badly in need of carrying out process optimization, eliminates influence of the wiping to chip surface by hand.
Carbon dioxide can reach above-critical state in 7.39MPa, 31 DEG C, and big with density, solvability is strong, mass transfer speed
The high feature of rate.Also have the characteristics that rich reserves, cheap and easily-available, nontoxic, inertia simultaneously and is easy recycling and recycles.
The solubility of supercritical carbon dioxide changes with the variation of pressure and temperature, in Near The Critical Point, suitably adjusts pressure
And temperature, solubility can be 102~103Variation in range.Supercritical carbon dioxide has nonpolarity as weak polar solvent
Machine compound has extremely strong solvability, can effectively clear the low pole organic pollutant on precise and tiny device surface, such as silicone, carbon
Hydrogen compound and grease etc.；Modifying agent can be added to the type molecule of those indissolubles, improve pollutant in supercritical carbon dioxide
Solubility.Water, organic amine, acids, aromatic compound etc. can act as modifying agent.
Therefore, supercritical carbon dioxide automatic cleaning process is developed, the use of harmful chemicals solvent is not only can be reduced, overcomes biography
The problem of technique of uniting, also comply with the condition of green clearer production technology.
Summary of the invention
The purpose of the utility model is to overcome deficiencies in the prior art, provide the environmentally protective dry type of one kind and clean automatically
Si base HgCdTe chip apparatus.
In order to solve the above-mentioned technical problem, the utility model is achieved through the following technical solutions:
Si base HgCdTe device for cleaning chip before a kind of passivation, including carbon dioxide storage tank, carbon dioxide storage tank sequentially lead to
Subcooler is connected to delivery pump, and delivery pump is connected to purge chamber by thermoconverter, and the outlet of purge chamber sequentially passes through decompression
Valve is connected to the entrance of carbon dioxide separation slot, and the gas vent of carbon dioxide separation slot is connected to carbon dioxide storage through condenser
The top of tank, the carbon dioxide storage tank has pressure controller.
It is provided with movable nozzle on purge chamber's inner roof wall, chip carrier is set below nozzle, is also set on purge chamber's inner roof wall
It is equipped with light source and light-intensity test mechanism, pressure controller, the light-intensity test mechanism and processing are provided on purge chamber's inner sidewall
Device is connected.
As optimal technical scheme, the delivery pump is pressure pumping, and the temperature control of the cooler is at 0 ~ 5 DEG C, institute
The temperature control of thermoconverter is stated at 40 ~ 50 DEG C, the pressure limit of the pressure controller is controlled in 8 ~ 10MPa, the light intensity
Testing agency includes photo resistance；The electric current that the photo resistance detection luminous intensity output phase is answered；The processor is by the electricity
Stream is compared with inner setting value.
Preferably, the photo resistance quantity is several, it is electrically connected after in parallel with the processor.
Chip to be cleaned will be placed on chip carrier；Light source and light-intensity test and mechanism can cover chip carrier comprehensively respectively
On chip；Processor is for analyzing the data of light-intensity test mechanism in real time and controlling the operating status of the device；Movable spray
Mouth, chip carrier, light source and light-intensity test mechanism are placed in purge chamber, and pressure controller is strong for detecting cleaning intraventricular pressure, are pressed
Force controller is for detecting pressure in carbon dioxide storage tank；Movable nozzle makees periodic motion in cleaning, can will be overcritical
On carbon dioxide jet to each chip to be washed；Cooler sequentially passes through the entrance of delivery pump, movable nozzle, and purge chamber goes out
Mouth connects carbon dioxide storage tank by carbon dioxide separation slot；Thermoconverter needs stable respectively at work with pressure controller
At 40 ~ 50 DEG C, 8 ~ 9MPa.
Compared with prior art, the utility model has the beneficial effects that
Firstly, in the utility model using light-intensity test structure receive chip reflection light source, when chip there are dirt and
When enabling light distribution unevenness, signal is sent to processor, the operation of holding meanss is evenly distributed until detection structure receives
Reflective light intensity when, the operation of processor arresting stop；This has efficiently controlled optimal scavenging period, avoids the wave of the energy
Take, saves cleaning cost.
Secondly, using carbon dioxide as cleaning agent in the utility model, low surface tension, high diffusibility and its is right
The excellent solvability of organic matter improves the cleaning efficiency to pollutant and shortens scavenging period, while also not introducing and toxic have
Harmful organic solvent, it is very environmentally protective.
Finally, instead of manual cleaning method, worker only needs will be to using automation cleaning way in the utility model
It washes chip and is sequentially placed into chip carrier, reduce and operator is required by hand, avoid because of artificial cleaning bring fault
And waste.
Detailed description of the invention
Fig. 1 is Si base HgCdTe device for cleaning chip before being passivated.
Fig. 2 is purge chamber's interior view.
Specific embodiment
The utility model is described in further detail with specific embodiment with reference to the accompanying drawing:
Shown in Fig. 1, a kind of Si base HgCdTe device for cleaning chip before passivation, carbon dioxide storage tank 1 sequentially passes through cooler 2
It is connected to delivery pump 3, delivery pump 3 is connected to purge chamber 5 by thermoconverter 4, and the outlet of purge chamber 5 sequentially passes through pressure reducing valve 11
It is connected to the entrance of carbon dioxide separation slot 12, the gas vent of carbon dioxide separation slot 12 is connected to titanium dioxide through condenser 13
The top of carbon storage tank 1, the carbon dioxide storage tank 1 has pressure controller 14.
As shown in Fig. 2, being provided with movable nozzle 6 on 5 inner roof wall of purge chamber, chip carrier 7, purge chamber are set below nozzle
It is additionally provided with light source 9 and light-intensity test mechanism 10 on 5 inner roof walls, pressure controller 8, the light are provided on purge chamber's inner sidewall
Strong testing agency 10 is connected with processor 15.
The process of cleaning treatment is as follows:
Step 1: the carbon dioxide in carbon dioxide storage tank 1 passes through cooler 2 first and is cooled to about 5 DEG C, passes through conveying
3 pressurization of pump, making pressure is about 9MPa, then raises the temperature to 40 to 50 DEG C by thermoconverter 4.Carbon dioxide is set to reach super face
Boundary's state.
Step 2: supercritical carbon dioxide is passed through in the movable nozzle 6 in purge chamber 5, to the chip on chip carrier 7 into
Row rinses, and is dissolved in the wax on chip surface, watermark, greasy dirt and slag in supercritical carbon dioxide.Chip is by the light of light source 9
It is reflected into light-intensity test mechanism 10, light-intensity test mechanism 10 is connected on processor 15, if the uniform intensity detected, table
Bright chip surface has cleaned up, processor 15 will auto-stopper operation.There is pressure controller above purge chamber
8。
Step 3: the supercritical carbon dioxide containing pollutant after flushing is depressured by pressure reducing valve 11, makes pressure
Drop to about 4MPa.Carbon dioxide becomes gaseous state after decompression, is passed into carbon dioxide separation slot 12, wherein the pollution dissolved
Object can be precipitated and be in a liquid state or solid-state, stay in the bottom of carbon dioxide separation slot 12.Carbon dioxide gas is in carbon dioxide separation
The upper layer of slot 12 enters condenser 13, and temperature is made to be cooled to about 5 DEG C, and carbon dioxide is passed through carbon dioxide storage tank 1 and makees second
A circulation cleaning, forms a kind of recyclable cleaning process.
Undeclared part involved in the utility model is same as the prior art or is realized using the prior art.
Claims (8)
1. Si base HgCdTe device for cleaning chip before a kind of passivation, including carbon dioxide storage tank, carbon dioxide storage tank sequentially pass through
Cooler is connected to delivery pump, and delivery pump is connected to purge chamber by thermoconverter, and the outlet of purge chamber sequentially passes through pressure reducing valve
It is connected to the entrance of carbon dioxide separation slot, the gas vent of carbon dioxide separation slot is connected to carbon dioxide storage through condenser
The top of tank, the carbon dioxide storage tank has pressure controller.
2. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 1, it is characterized in that: the delivery pump
It is pressure pumping.
3. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 1, it is characterized in that: the cooler
Temperature control at 0 ~ 5 DEG C.
4. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 1, it is characterized in that: the hot-cast socket
The temperature of device is controlled at 40 ~ 50 DEG C.
5. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 1, it is characterized in that: purge chamber Nei Ding
It is movable on wall to be provided with nozzle, chip carrier is set below nozzle, is additionally provided with light source and light-intensity test on purge chamber's inner roof wall
Mechanism is provided with pressure controller on purge chamber's inner sidewall, and the light-intensity test mechanism is connected with processor.
6. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 5, it is characterized in that: the light intensity is examined
Surveying mechanism includes photo resistance；The electric current that the photo resistance detection luminous intensity output phase is answered；The processor is by the electric current
Compared with inner setting value.
7. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 6, it is characterized in that: the photosensitive electricity
It is several to hinder quantity, is electrically connected after in parallel with the processor.
8. Si base HgCdTe device for cleaning chip before a kind of passivation according to claim 5, it is characterized in that: the pressure control
The pressure limit of device processed is controlled in 8 ~ 10 MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821920845.2U CN209000881U (en) | 2018-11-21 | 2018-11-21 | Si base HgCdTe device for cleaning chip before a kind of passivation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821920845.2U CN209000881U (en) | 2018-11-21 | 2018-11-21 | Si base HgCdTe device for cleaning chip before a kind of passivation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209000881U true CN209000881U (en) | 2019-06-18 |
Family
ID=66806778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821920845.2U Expired - Fee Related CN209000881U (en) | 2018-11-21 | 2018-11-21 | Si base HgCdTe device for cleaning chip before a kind of passivation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209000881U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909128A (en) * | 2021-02-07 | 2021-06-04 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
| WO2023121989A1 (en) * | 2021-12-22 | 2023-06-29 | Kla Corporation | Supercritical fluid cleaning for components in optical or electron beam systems |
| CN117490268A (en) * | 2023-12-29 | 2024-02-02 | 广州广钢气体能源股份有限公司 | Carbon dioxide cooling system for chip cleaning and conveying system |
-
2018
- 2018-11-21 CN CN201821920845.2U patent/CN209000881U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909128A (en) * | 2021-02-07 | 2021-06-04 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
| WO2023121989A1 (en) * | 2021-12-22 | 2023-06-29 | Kla Corporation | Supercritical fluid cleaning for components in optical or electron beam systems |
| CN117490268A (en) * | 2023-12-29 | 2024-02-02 | 广州广钢气体能源股份有限公司 | Carbon dioxide cooling system for chip cleaning and conveying system |
| CN117490268B (en) * | 2023-12-29 | 2024-03-26 | 广州广钢气体能源股份有限公司 | Carbon dioxide cooling system for chip cleaning and conveying system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209000881U (en) | Si base HgCdTe device for cleaning chip before a kind of passivation | |
| CN101661869B (en) | Method for cleaning polished gallium arsenide chip | |
| CN109959536B (en) | Water quality sampling online detection system suitable for unmanned ship | |
| CN104275337A (en) | Automatic cleaning machine for auxiliary oil containers | |
| CN205732088U (en) | A kind of glass cleaning machine | |
| CN110379734B (en) | Wafer post-processing system and method | |
| CN106824929A (en) | A kind of vertical multi-stage quartz tube cleaner and cleaning method | |
| CN102660393B (en) | Cleaning solution for light-emitting diode (LED) chip | |
| CN110429021B (en) | Silicon wafer cleaning and draining device and method, and cleaning and drying device and method | |
| CN206561007U (en) | A kind of automatic cleaning drying device of photovoltaic solar silicon chip | |
| CN108729539A (en) | A method of municipal pipeline is cleaned using ice slurry | |
| CN103042008A (en) | Cleaning method of optical substrate for laser thin-film element | |
| CN106824901A (en) | A kind of horizontal quartz boat cleaning machine and cleaning method | |
| KR20180049103A (en) | Method and apparatus for drying a semiconductor substrate using liquid carbon dioxide | |
| CN104163573A (en) | Spray-type glass ink-removal cleaner | |
| CN116183623A (en) | Intelligent wafer surface defect detection method and device | |
| CN211700203U (en) | Semiconductor polished wafer cleaning equipment | |
| CN113458088A (en) | Method and system for cleaning surface of solar photovoltaic panel | |
| CN201497619U (en) | Automatic air tightness detection device for cast furnace tube | |
| JP2005032948A (en) | Method for cleaning semiconductor wafer and cleaning device | |
| CN206450696U (en) | Automatic clinical chemistry analyzer with air jet system | |
| CN208116272U (en) | A kind of ultrasonic cleaning equipment | |
| CN205833784U (en) | Cigarette automatic double surface gluer cleans device | |
| CN106596991A (en) | Fully automatic biochemical analyzer with gas jetting device and fully automatic biochemical analysis method | |
| JPH05281A (en) | Apparatus for washing bottle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190618 Termination date: 20191121 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |