CN211700203U - Semiconductor polished wafer cleaning equipment - Google Patents
Semiconductor polished wafer cleaning equipment Download PDFInfo
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- CN211700203U CN211700203U CN202020188596.3U CN202020188596U CN211700203U CN 211700203 U CN211700203 U CN 211700203U CN 202020188596 U CN202020188596 U CN 202020188596U CN 211700203 U CN211700203 U CN 211700203U
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- 238000004140 cleaning Methods 0.000 title claims abstract description 160
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 283
- 239000010703 silicon Substances 0.000 claims abstract description 283
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 281
- 238000000926 separation method Methods 0.000 claims abstract description 77
- 238000005406 washing Methods 0.000 claims abstract description 75
- 238000005498 polishing Methods 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims description 173
- 238000001035 drying Methods 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 19
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 33
- 238000012856 packing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 318
- 229910001868 water Inorganic materials 0.000 description 63
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 57
- 239000003814 drug Substances 0.000 description 47
- 239000002245 particle Substances 0.000 description 42
- 239000003344 environmental pollutant Substances 0.000 description 33
- 231100000719 pollutant Toxicity 0.000 description 33
- 230000000694 effects Effects 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000007921 spray Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 8
- 238000005507 spraying Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000002957 persistent organic pollutant Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000010408 sweeping Methods 0.000 description 4
- 238000012864 cross contamination Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Abstract
The utility model provides a semiconductor polishing piece cleaning equipment, include: a separation unit: the first wafer basket is used for separating the polished silicon wafer from the first wafer basket loaded with the silicon wafer; a cleaning unit: the cleaning device comprises a plurality of cleaning devices which are continuously arranged and used for cleaning the silicon wafer; a combination unit: loading the cleaned silicon wafer into a second wafer basket; and independent mechanical hands are respectively arranged in the separation unit, the cleaning unit and the combination unit to move the first wafer basket or the silicon wafer. The utility model discloses earlier will be equipped with the piece basket and the separation of silicon disk of polishing piece, carry out the substep to the silicon disk again and wash, during another piece basket of packing into again of silicon disk after the washing, use a plurality of manipulators to carry out the independent operation silicon disk to each process simultaneously in whole cleaning process, prevent that basket of flowers and manipulator from causing secondary pollution to the silicon disk, the cleaning quality is good, and the cleaning efficiency is high.
Description
Technical Field
The utility model belongs to the technical field of semiconductor silicon disk washs, especially, relate to a semiconductor polishing piece cleaning equipment.
Background
The silicon wafer after chemical mechanical polishing is a substrate for producing a very large scale integrated circuit, and if nanoscale electrical components and circuit connecting wires in the very large scale integrated circuit are polluted by particle pollutants and metal pollutants, the functional damage of short circuit or open circuit of circuits in a chip is easily caused, so that the integrated circuit is failed. However, after chemical mechanical polishing, particle contaminants and metal contaminants may adhere to the surface of the silicon wafer, and if the particle contaminants and the metal contaminants adhering to the surface of the silicon wafer cannot be removed by cleaning after the chemical mechanical polishing, the silicon wafer cannot be used for the production of the very large scale integrated circuit, which directly reduces the quality and price of the silicon wafer, and causes low yield and high production cost.
In the existing cleaning process, a wafer basket for containing the polished silicon wafer is used for cleaning from the beginning of liquid medicine, and the same wafer basket and a movable operation tool are used until the cleaning is finished, so that secondary pollution is caused to the silicon wafer, and the silicon wafer cannot be completely and thoroughly cleaned. Meanwhile, due to the fact that the structure of the cleaning tank is unreasonable in design, the cleaning quality is poor, and the rework rate is high.
SUMMERY OF THE UTILITY MODEL
The utility model provides a semiconductor polishing piece cleaning equipment uses the same piece basket that bears the weight of the silicon disk and removes the operation instrument in solving current cleaning process, leads to the silicon disk to wash unclean technical problem. The utility model has the advantages of reasonable design and the controllability is high, can effectively get rid of remaining polishing solution, particle contaminant and metal contaminant on the surface of chemical mechanical polishing back silicon disk, and the cleaning quality is good, and the cleaning efficiency is high.
In order to solve the technical problem, the utility model discloses a technical scheme is:
a semiconductor polishing pad cleaning apparatus comprising:
a separation unit: the first wafer basket is used for separating the polished silicon wafer from the first wafer basket loaded with the silicon wafer;
a cleaning unit: the cleaning device comprises a plurality of cleaning devices which are continuously arranged and used for cleaning the silicon wafer;
a combination unit: loading the cleaned silicon wafer into a second wafer basket;
and independent mechanical hands are respectively arranged in the separation unit, the cleaning unit and the combination unit to move the first wafer basket or the silicon wafer.
Further, the separation unit comprises a separation groove and a movable separation top frame arranged in the separation groove, and the separation top frame can penetrate through the bottom of the first wafer basket and separate the silicon wafer from the first wafer basket.
Further, the separation unit further includes an upper loading tank disposed on a side of the separation tank away from the cleaning unit, and a first robot that transfers the first wafer basket and the silicon wafer together from the upper loading tank to the separation tank.
Further, the cleaning unit comprises a first liquid tank and a second liquid tank, and the first liquid tank is arranged close to the separation unit; a first washing groove and a second washing groove are arranged in front of and behind the second liquid groove respectively, and the first washing groove is located between the first liquid groove and the second liquid groove.
Further, the cleaning unit also comprises a second manipulator and a third manipulator, and the second manipulator moves the silicon wafer from the separation unit to the first liquid tank and the first washing tank in sequence for cleaning; and the third manipulator sequentially moves the silicon wafer from the first washing tank to the second liquid tank and the second washing tank for cleaning.
Further, a shaking device and an ultrasonic device are arranged in the first liquid tank and the second liquid tank, the shaking device comprises a bracket and a shaking arm arranged below the bracket, and the bracket is used for placing the silicon wafer; the shaking arm can drive the silicon wafer to carry out shaking cleaning through the bracket; the ultrasonic device comprises an ultrasonic device which is arranged in the first liquid tank and the second liquid tank.
Furthermore, a liquid level sensor, a concentration tester and a liquid medicine supply pipe are arranged in the first liquid tank and the second liquid tank.
Further, the combination unit comprises a combination groove and a fourth manipulator, the second wafer basket is placed in the combination groove in advance, and the fourth manipulator loads the cleaned silicon wafer into the second wafer basket.
Furthermore, positioning devices are arranged at the bottoms of the uploading groove, the separating groove and the combining groove and used for fixing the sheet basket.
Further, a drying unit is arranged between the combined tank and the cleaning unit, the drying unit sequentially comprises a slow lifting tank and a drying tank, and the fourth machine moves the silicon wafer out of the second washing tank and sequentially moves the silicon wafer into the slow lifting tank, the drying tank and the combined tank.
Compared with the prior art, adopt the utility model provides a cleaning equipment, structural design is reasonable, the controllability is strong and degree of automation is high, break away from separately with a piece basket that is equipped with this silicon disk the silicon disk after will being equipped with the polishing, wash and dry the substep to the silicon disk again, wash, the silicon disk after the stoving is packed into again in No. two piece baskets, avoid remaining liquid medicine or pollutant on a piece basket in the cleaning process and cause secondary pollution to the silicon disk after the washing, guarantee the silicon disk and thoroughly wash, furthest gets rid of remaining polishing solution on the surface of chemical mechanical polishing back silicon disk, particle pollutant and metal contaminant. Meanwhile, a plurality of manipulators are used for independently operating the silicon wafer in each process in the whole cleaning process, so that the situation that the cleaning effect of the silicon wafer is influenced due to the fact that the manipulators are corroded by liquid medicine and cross contamination is generated between the manipulator and the silicon wafer can be prevented, the grafting rate of cleaning equipment can be improved, the cleaning efficiency is improved, and the cleaning quality of the silicon wafer is further guaranteed.
Drawings
FIG. 1 is a schematic structural view of a semiconductor polishing pad cleaning apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a separation unit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first liquid tank according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a first washing tank according to an embodiment of the present invention;
fig. 5 is a schematic structural view of a fit tank according to an embodiment of the present invention.
In the figure:
10. separation unit 11, upper loading tank 12, and separation tank
13. First manipulator 14, first piece basket 15, locating piece
16. Separation roof rack 20, cleaning unit 21, first liquid tank
22. No. one wash tank 23, second manipulator 24, bracket
25. Swing arm 26, ultrasonic device 27, supply tube
28. Heater 29, No. two cistern 210, No. two wash tanks
211. Third manipulator 212, drain tank 213 and water storage tank
214. Spray pipe 30, drying unit 31 and slow lifting groove
32. Drying tub 33, fourth robot 40, and integrated unit
41. Combination groove 42, positioning block 43 and second sheet basket
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
An embodiment of the utility model provides a semiconductor polishing piece cleaning equipment, as shown in figure 1, include: the silicon wafer cleaning device comprises a separation unit for separating a polished silicon wafer from a first wafer basket 14 for bearing the silicon wafer, a plurality of cleaning units 20 which are arranged in series and are used for cleaning the silicon wafer, a drying unit 30 for drying the cleaned silicon wafer, and a combination unit for loading the cleaned and dried silicon wafer into a second wafer basket 44. Among them, in the separation unit 10, the cleaning unit 20, the drying unit 30, and the integrating unit 40, independent manipulators are provided to move the first wafer basket 14 or the silicon wafer, respectively. In this embodiment, the separation unit 10 is adopted to separate the polished silicon wafer from the first wafer basket 14 containing the polished wafer, then the silicon wafer is separately cleaned and dried step by step in the cleaning unit 20 and the drying unit 30 in sequence, and finally the cleaned and dried silicon wafer is loaded into the second wafer basket 44 in the combination unit 40, so that the situation that the first wafer basket 14 bearing the polished wafer contains polishing liquid, particle pollutants or metal pollutants which flow out of the polished wafer in the cleaning process is avoided, the situation that the polishing liquid or pollutants are re-adhered to the cleaned silicon wafer when the first wafer basket 14 is cleaned together with the silicon wafer is prevented, the technical problem that the silicon wafer is secondarily polluted by the residual liquid medicine or pollutants in the first wafer basket 14 is solved, and the effect of thoroughly cleaning the silicon wafer is achieved. Meanwhile, in the whole cleaning process, a plurality of manipulators are used for independently operating the wafer basket or the silicon wafer for each process in the separation unit 10, the cleaning unit 20, the drying unit 30 and the combination unit 40, so that the situation that the silicon wafer is cleaned due to the fact that the manipulators are corroded by liquid medicine and cross contamination is caused can be prevented, the grafting rate of each cleaning device can be improved, the cleaning quality of the silicon wafer is further guaranteed, and the cleaning efficiency is improved.
Specifically, as shown in fig. 2, the separating unit 10 includes an upper loading slot 11 for loading the polished silicon wafer into a first wafer basket 14 for carrying the silicon wafer, a separating slot 12 for separating the silicon wafer from the first wafer basket 14, and a first robot 13 for operating the first wafer basket 14 to move the first wafer basket 14 together with the silicon wafer, and the first robot 13 may be a robot of any structure as long as it can cooperate with the first wafer basket 14, without being particularly limited thereto. Wherein, the upper loading groove 11 and the separating groove 12 are independent water grooves with open upper end surfaces and are arranged side by side, and preferably, the upper loading groove 11 and the separating groove 12 have the same size, thereby being convenient for arrangement and processing. The separation tank 12 is provided close to the cleaning unit 20, the upper loading tank 11 is fixedly provided on the side of the separation tank 12 remote from the cleaning unit 20, the first robot 13 is suspended on a guide rail (not shown) disposed directly above the upper loading tank 11 and the separation tank 12 and perpendicular to the longitudinal direction of the separation tank 12, and the first robot 13 moves along the guide rail and transfers the first wafer basket 14 and the silicon wafers together from the upper loading tank 11 to the separation tank 12. The water in the upper loading tank 11 and the separation tank 12 is pure water, the height of the pure water is higher than the height of the first wafer basket 14 and the silicon wafer, and the upper loading tank 11 and the separation tank 12 can be used for not only loading the silicon wafer into the first wafer basket 14 and separating the silicon wafer from the first wafer basket 14, but also used as a pre-cleaning tank for cleaning large particles on the polished silicon wafer.
Further, the purpose of the upper loading groove 11 is to place a group of silicon wafers into a first wafer basket 14 which is fixedly placed, positioning devices are arranged at the bottoms of the upper loading groove 11 and the separation groove 12, each positioning device comprises positioning blocks 15 which are symmetrically arranged, and the positioning blocks 15 are arranged in parallel in the width direction of the upper loading groove 11 and the separation groove 12 and are parallel to the length direction of the groove body. The width of the positioning block 15 is adjustable, when the positioning block 15 needs to be matched with an empty first sheet basket 14, the positioning block 15 firstly opens outwards along the width direction of the groove body, the first mechanical hand 13 grabs the empty first sheet basket 14 and enables the empty first sheet basket 14 to be placed between the positioning blocks 15, the first mechanical hand 13 is separated from the first sheet basket 14, the positioning block 15 synchronously approaches the first sheet basket 14 and clamps the first sheet basket 14, and therefore the first sheet basket 14 is fixed in the uploading groove 11; and then other wafer inserting manipulators (not shown) are used for placing the polished silicon wafers into the empty first wafer basket 14 one by one, so that the silicon wafer uploading work is completed. Then, the first wafer basket 14 filled with the silicon wafers is grabbed by the first manipulator 13 and is to be transported to the separation tank 12, the positioning block 15 is loosened, and the first wafer basket 14 and the silicon wafers are moved together with the first manipulator 13 from the uploading tank 11 to the separation tank 12; the first basket 14 filled with silicon wafers is placed between the positioning blocks 15 in the separation tank 12, and the first robot 13 is released and lifted up to move to just above the upper loading tank 11 to wait for the retrieval of the next empty first basket 14.
After the first wafer basket 14 loaded with silicon wafers is placed in the separation tank 12, the positioning block 15 in the separation tank 12 clamps and fixedly places the first wafer basket 14 on the tank bottom to prevent the first wafer basket 14 from moving in the separation tank 12. The bottom in the separation tank 12 is provided with a movable separation top frame 16, the separation top frame 16 is located between the positioning blocks 15 and arranged parallel to the positioning blocks 15, the upper end face of the separation top frame 16 is provided with a top plate 17, a top column 18 is arranged below the top plate 17, the top column 18 is fixedly connected with the top plate 17, the top column 18 can drive the top plate 17 to move in an up-and-down telescopic mode along the vertical direction, and the top plate 17 is located under the center of the first piece basket 14 and can penetrate through the bottom of the first piece basket 14 and enable a silicon wafer to be clamped and fixed on the upper end face of the top plate. In the process of cleaning the polished silicon wafer, the first wafer basket 14 bearing the silicon wafer can affect the cleaning effect of the silicon wafer, so that the secondary pollution of the first wafer basket 14 to the silicon wafer is avoided for ensuring the cleaning effect of the silicon wafer, and the silicon wafer is required to be separated from the first wafer basket 14 to be cleaned independently. During separation, the first wafer basket 14 is fixed, the top column 18 pushes the top plate 17 to move upwards, the top plate 17 jacks up the silicon wafers and drives the silicon wafers to move upwards together, and therefore the silicon wafers are separated from the first wafer basket 14. After the silicon wafer is separated from the first wafer basket 14, the first wafer basket 14 remains at the bottom of the separation tank 12, and the second robot 23 provided in the cleaning unit 20 for the next process grasps the silicon wafer and moves the silicon wafer from the separation tank 12 to the cleaning unit 20 for cleaning. After the silicon wafer is removed, the top column 18 drives the top plate 17 to retract to the initial position, the positioning block 15 in the separation tank 12 releases the first wafer basket 14, and the first mechanical arm 13 takes the first wafer basket 14 and puts the first wafer basket into the uploading tank 11 to prepare for uploading of the next group of silicon wafers.
As shown in fig. 1, the cleaning unit 20 includes a primary cleaning and a secondary cleaning, wherein the primary cleaning includes a first liquid tank 21 and a first cleaning tank 22 in sequence, and the first liquid tank 21 is disposed near the separation tank 12; the secondary cleaning sequentially comprises a second liquid tank 29 and a second washing tank 210, and the second liquid tank 29 is arranged close to the first washing tank 22. The cleaning unit 20 further comprises a second manipulator 23 and a third manipulator 211, wherein the second manipulator 23 is used for moving the silicon wafer out of the separation tank 12 in the separation unit 10 and sequentially moving the silicon wafer into the first liquid tank 21 and the first washing tank 22 for cleaning; the third manipulator 211 moves the silicon wafers out of the first washing tank 22 and sequentially moves the silicon wafers into the second liquid tank 29 and the second washing tank 210 for cleaning, the second manipulator 23 and the third manipulator 211 have the same structure and are used for clamping a group of silicon wafers, and any conventional clamping device capable of clamping a group of silicon wafers can be selected for the structures of the second manipulator 23 and the third manipulator 211, which is not important in the present disclosure and omitted here.
Specifically, as shown in fig. 3, in one cleaning, the silicon wafer is firstly oxidized and corroded by the chemical liquid in the first liquid tank 21, and then the oxidized and corroded surface layer is cleaned in the first washing tank 22, so as to completely remove the particle pollutants on the surface. The first liquid tank 21 is filled with a liquid containing NH4OH、H2O2And H20 mixed liquid, NH4OH:H2O2:H2The volume ratio of O is 1:1:5-1:2:7, and in order to ensure the removal effect of the particle pollutants on the surface of the silicon wafer, a constant cleaning temperature needs to be maintained, and in the embodiment, the cleaning temperature is 65-80 degrees. NH (NH)4OH、H2O2And H2The mixed liquid medicine of 0 can oxidize and micro-etch the surface of the polished silicon wafer, so that particle pollutants attached to the surface are removed along with the oxide layer, and meanwhile, slight organic pollutants and partial metal pollutants can be removed. A temperature tester (not shown) is arranged in the first washing tank 22 to monitor the temperature of the liquid medicine in the first washing tank, and a heater 28 is arranged at the bottom of the first washing tank 22 to ensure that the temperature of the liquid medicine in the first washing tank is constant. When the temperature tester monitors that the temperature in the first washing tank 22 is lower than 65 degrees, the temperature tester transmits the measured data to the temperature controller, and the temperature controller can control the heater 28 to heat; if the temperature is higher than 80 degrees, alarming is carried out, and the temperature controller controls the heater 28 to stop heating; and the liquid medicine has the best effect of removing particle pollutants on the surface of the silicon wafer in the temperature range.
A liquid level sensor and a supply pipe 27 are also arranged in the first washing tank 21, the liquid level sensor is arranged to ensure the liquid level of the liquid medicine to be constant, and if the liquid level sensor monitors that the liquid level reaches a lower limit position, the liquid level sensor monitors that the liquid level reaches the lower limit positionH in supply pipe 272Starting to supplement liquid by an O liquid supplementing pipe; when the liquid surface reaches the upper limit position, the liquid supply is stopped. In order to ensure the stability of the concentration of the chemical in the first wash tank 21, an automatic concentration tester, which is a common instrument in the art, is provided in the first wash tank 21. If NH4OH or H2O2Is lower than the set value, NH4OH liquid supply pipe or H2O2And (4) starting to replenish the liquid by the liquid replenishing pipe, replenishing 10-20mL each time, measuring the concentration of the liquid medicine once after replenishing, continuing to replenish the liquid if the concentration of the liquid medicine is still lower than a set value, and circulating the steps until the set concentration value is reached.
In order to improve the cleaning effect, a shaking device and an ultrasonic device are also arranged in the first liquid tank 21 and are started synchronously.
Specifically, as shown in fig. 3, the shaking device includes a U-shaped bracket 24 and a shaking arm 25 disposed below the bracket 24, the silicon wafer is placed in the bracket 24, the shaking arm 25 can reciprocate up and down under the action of external force, the shaking arm 25 can shake and clean the silicon wafer by driving the bracket 24 to reciprocate up and down, and the shaking arrangement can avoid the difference in cleaning the same batch of particle pollutants, that is, the consistency in removing the particle pollutants of the same batch of silicon wafers is improved, the effect of cleaning the particles and organic pollutants on the surface of the silicon wafer is improved, and the cleaning efficiency is improved.
The ultrasonic device comprises an ultrasonic device 26 arranged on one side wall surface of the first liquid tank 21, the height of the ultrasonic device 26 is consistent with the height of the silicon wafer and is arranged in the direction vertical to the wall thickness of the silicon wafer, and the ultrasonic device 26 can generate ultrasonic waves parallel to the surface of the silicon wafer so as to enable NH in the liquid medicine4OH and H2O2The particles are soaked on the surface of the silicon wafer, then the mixed solution is gradually diffused into the interface, and finally NH is carried out4OH and H2O2The particles are completely infiltrated and become free NH in suspension4OH and H2O2The particles can more effectively remove particle pollutants on the surface of the silicon wafer. After the silicon wafer enters the first liquid tank 21, the ultrasonic device 26 starts to work, the ultrasonic frequency can be 20-50kHz or 1MHz, and the ultrasonic time is 1-5min。
In the working process of the first liquid tank 21, the temperature of the liquid medicine is constantly kept at 65-80 degrees by a temperature tester and a heater 28 arranged in the first liquid tank 21; then the volume ratio of the mixed liquid medicine is controlled to NH under the combined action of the liquid level sensor, the concentration tester and the liquid medicine supply pipe 274OH： H2O2：H2O is between 1:1:5 and 1:2: 7; after the silicon wafer is placed in the first liquid tank 21, the ultrasonic device 26 and the shaking arm 25 synchronously start to work, the ultrasonic device 26 performs microwave vibration on the silicon wafer in an ultrasonic mode, meanwhile, the shaking arm 25 performs shaking cleaning on the silicon wafer through the bracket 24, after 1-5min of cleaning, the ultrasonic device 26 and the shaking arm 25 synchronously stop working, and the second manipulator 23 moves the silicon wafer from the first liquid tank 21 to the first washing tank 22.
As shown in FIG. 4, the first washing tank 22 is mainly used for removing particle impurities and residual NH on the surface of the silicon wafer4OH and H2O2The surface of the silicon wafer is cleaned by the mixed chemical solution of (3). Wash tank 22 is including the water drainage tank 212 that is located the top and communicate and be located the aqua storage tank 213 of water drainage tank 212 below with water drainage tank 212, be equipped with two shower 214 that upper portion symmetry set up and two shower 214 that the lower part symmetry set up in water drainage tank 212, shower 214 group of upper portion and lower part is located water drainage tank 212 cell body both sides respectively, shower 214 perpendicular to silicon disk thickness direction sets up, four groups of shower 214 all spray rivers towards silicon disk central axis position, form intercrossing's spraying effect to the silicon disk, spray the washing fast with the all-round to the silicon disk.
In the working process of the working procedure, after the water drainage tank 212 is filled with water, the second mechanical arm 23 takes out the silicon wafer from the first liquid tank 21 and puts the silicon wafer into the bracket 24 in the first washing tank 22 for fixed placement, the second mechanical arm 23 is moved away, the control valve between the water drainage tank 212 and the water storage tank 213 is opened, water flow quickly enters the water storage tank 213 from the water drainage tank 212 within 5-10s, the upper spray pipe 214 group and the lower spray pipe 214 group work simultaneously, and the silicon wafer is sprayed in an intersecting manner. After the spraying is finished, the water discharge tank 212 is filled with water, and the third robot 211 moves the silicon wafer from the first washing tank 22 to the second washing tank 29 for secondary washing.
The secondary cleaning mainly uses HCL and H2O2The mixed liquid medicine removes metal pollutants on the surface of the silicon wafer. Specifically, the secondary cleaning sequentially comprises a second liquid tank 29 and a second washing tank 210, the structures of the second liquid tank 29 and the second washing tank 210 are respectively the same as those of the first liquid tank 21 and the first washing tank 22, and the drawings are omitted and will not be described in detail.
The second liquid tank 29 is filled with HCL and H2O2And H2Mixed liquid of O, HCL, H2O2:H2The volume ratio of O is 1:1:6-1:2:8, the cleaning temperature is constant at 65-80 degrees, and HCL and H are in the temperature2O2The mixed liquid medicine can dissolve alkali metal ions and hydroxides of aluminum, iron and magnesium, in addition, chloride ions in hydrochloric acid and residual metal ions are subjected to a complex reaction to form a complex compound which is easy to dissolve in an aqueous solution, and metal pollutants can be removed from the bottom layer of the silicon wafer. In order to ensure the removal effect of particles on the surface of the silicon wafer, it is necessary to maintain a constant temperature and a constant concentration of the chemical solution as in the first liquid tank 21 while shaking and ultrasonically cleaning the silicon wafer.
The working process of the second liquid tank 29 is the same as that of the first liquid tank 21, and specifically comprises the following steps: the temperature of the liquid medicine is kept constant at 65-80 degrees by a temperature tester and a heater 28 arranged in a second liquid tank 29; the volume ratio of the mixed liquid medicine is controlled to be HCL: H under the combined action of the liquid level sensor, the concentration tester and the liquid medicine supply pipe 272O2:H2O is between 1:1:6 and 1:2: 8; after the silicon wafer is placed in the second liquid tank 29, the ultrasonic device 26 and the shaking arm 25 start to work synchronously, the ultrasonic device 26 performs microwave vibration on the silicon wafer in an ultrasonic mode, meanwhile, the shaking arm 25 performs shaking cleaning on the silicon wafer through the bracket 24, after 1-5min of cleaning, the ultrasonic device 26 and the shaking arm 25 stop working synchronously, and the third manipulator 211 moves the silicon wafer from the second liquid tank 29 to the second washing tank 210.
The second washing tank 210 is mainly used for removing particle impurities and residual HCL and H on the surface of the silicon wafer2O2The mixed chemical solution of (4) cleans the surface of the wafer. Working of the second washing tank 210The process is the same as the first washing tank 22, and specifically comprises the following steps: after the water discharge tank 212 is filled with water, the third mechanical arm 211 takes the silicon wafer out of the second liquid tank 29 and places the silicon wafer on the bracket 24 in the second washing tank 210, the third mechanical arm 211 is moved away, the control valve between the water discharge tank 212 and the water storage tank 213 is opened, water flow rapidly enters the water storage tank 213 from the water discharge tank 212 within 5-10s, the upper spray pipe 214 group and the lower spray pipe 214 group work simultaneously, and the silicon wafer is sprayed in an intersecting mode. After the spraying is finished, the drain tank 212 is filled with water, and the fourth robot 42 provided in the drying unit 30 moves the silicon wafer from the second washing tank 210 into the drying unit 29 to be dried and cleaned.
The drying unit 30 includes a slow-pulling tank 31 and a drying tank 32 in this order, the slow-pulling tank 31 is disposed near the second washing tank 210, and the drying tank 32 is disposed near the combining tank 41 in the combining unit 40. The integrated unit 40 and the drying unit 30 share the fourth manipulator 42, that is, the fourth manipulator 42 moves the silicon wafer out of the second washing tank 210 and sequentially moves the silicon wafer into the slow lifting tank 31 and the drying tank 32; then, the fourth robot 42 moves the dried silicon wafer from the drying tank 32 to the integrating tank 41, and loads the cleaned silicon wafer into the second wafer basket 43. The fourth robot 42 is the same as the second robot 23 and the third robot 211 in order to clamp a set of silicon wafers, and therefore, the configuration is the same and is omitted.
The purpose of the slow lifting groove 31 is to slowly lift the silicon wafer by the fourth manipulator 42, so that the water film on the surface of the silicon wafer naturally flows down, and the formation of watermarks on the surface of the silicon wafer after being dried is avoided. After the slow-lift tank 31 is cleaned, the fourth robot 42 moves the silicon wafer into the drying tank 32.
The drying tank 32 is provided to thoroughly dry the silicon wafer after the silicon wafer is subjected to the slow-pulling tank 31, and the whole drying process is performed in a high-purity nitrogen atmosphere. After the silicon wafer is placed in the drying groove 32, high-purity nitrogen sweeps the silicon wafer through a sweeping opening to take away moisture on the surface of the silicon wafer, a hot exhaust opening exhausts the gas, and after sweeping is carried out for 10-60min, a heating wire starts to heat and keeps the temperature at 40-70 ℃ for 1-5 min.
As shown in fig. 5, the combining unit 40 includes a combining groove 41 and a fourth robot 42, wherein a positioning block 43 is symmetrically disposed at the bottom of the combining groove 41, and the positioning block 43 has the same structure and function as the positioning block 15, and will not be described in detail herein. The empty second sheet basket 44 is fixed in advance between the positioning blocks 43 at the bottom of the combining groove 41, and the second sheet basket 44 has the same structure as the first sheet basket 14 and is omitted here. Then the silicon wafer in the drying tank 32 is placed in the second wafer basket 44 by the fourth manipulator 42, and the combination operation of the cleaned silicon wafer and the second wafer basket 44 is completed.
Compared with the prior art, adopt the utility model provides a cleaning equipment, structural design is reasonable, the controllability is strong and degree of automation is high, break away from separately with a piece basket 14 that is equipped with this silicon disk the silicon disk after will being equipped with the polishing, carry out substep washing and stoving to the silicon disk again, it washs, the silicon disk after the stoving is packed into again in No. two piece baskets 44, avoid remaining liquid medicine or pollutant on a piece basket 14 in the cleaning process and cause secondary pollution to the silicon disk after the washing, guarantee silicon disk rinse thoroughly, furthest gets rid of remaining polishing solution on the silicon disk surface after the chemical mechanical polishing, particle pollutant and metal contaminant. Meanwhile, a plurality of manipulators are used for independently operating the silicon wafer in each process in the whole cleaning process, so that the situation that the cleaning effect of the silicon wafer is influenced due to the fact that the manipulators are corroded by liquid medicine and cross contamination is generated between the manipulator and the silicon wafer can be prevented, the grafting rate of cleaning equipment can be improved, the cleaning efficiency is improved, and the cleaning quality of the silicon wafer is further guaranteed.
Meanwhile, in the cleaning process of the liquid medicine, the temperature of the liquid medicine is kept constant within a constant range through a temperature tester and a heater which are arranged in the liquid medicine groove. And the volume ratio of the mixed liquid medicine is controlled between standard proportions through the combined action of the liquid level sensor, the concentration tester and the liquid medicine supply pipe. Meanwhile, the shaking device and the ultrasonic device are adopted for synchronous cleaning, the shaking device can further improve the consistency of removing particle pollutants of silicon wafers in the same batch, improve the cleaning effect on the particles and organic pollutants on the surfaces of the silicon wafers and improve the high efficiency; the ultrasonic device can enable chemical component particles in the liquid medicine to be soaked on the surface of the silicon wafer, then the mixed solution is gradually diffused into an interface, and finally the mixed solution is completely soaked and uniformly dispersed on the silicon wafer and becomes suspended free particles, so that particle pollutants on the surface of the silicon wafer can be more effectively removed.
In the pure water cleaning process, the silicon wafer is cleaned by adopting a rapid water drainage overflow method and a cross spray mode so as to remove particulate impurities and residual chemical liquid on the surface of the silicon wafer and clean the surface of the silicon wafer.
A method for cleaning a semiconductor polishing pad, using the cleaning apparatus as defined in any one of the above, comprising the steps of:
the first step is as follows: the silicon wafer is detached from the first wafer basket 14 in the separation unit 10.
Specifically, as shown in fig. 2, the separating unit 10 includes an upper loading tank 11 for loading the polished silicon wafer into a first wafer basket 14 for carrying the silicon wafer, a separating tank 12 for separating the silicon wafer from the first wafer basket 14, and a first robot 13 for operating the first wafer basket 14 to move the first wafer basket 14 together with the silicon wafer, the water in the upper loading tank 11 and the separating tank 12 is pure water, the height of the pure water is less than the height at which the first wafer basket 14 and the silicon wafer are placed, and the upper loading tank 11 and the separating tank 12 not only serve to load the silicon wafer into the first wafer basket 14 and separate the silicon wafer from the first wafer basket 14, but also serve as a pre-cleaning tank to clean large particles on the polished silicon wafer.
Furthermore, the upper loading groove 11 is arranged to place a group of silicon wafers into a first wafer basket 14 which is fixedly placed, in the process of loading, the symmetrically arranged positioning blocks 15 which are positioned at the bottom of the upper loading groove 11 are firstly outwards opened along the width direction of the groove body, the first mechanical hand 13 grabs the first vacant wafer basket 14 and enables the first vacant wafer basket 14 to be placed between the positioning blocks 15, the first mechanical hand 13 is separated from the first wafer basket 14, and the positioning blocks 15 synchronously approach the first wafer basket 14 and clamp the first wafer basket 14, so that the first wafer basket 14 is fixed in the upper loading groove 11; and then other insert manipulators are used for placing the polished silicon wafers into the empty first wafer basket 14 one by one, so that the silicon wafers are uploaded. Then, the first wafer basket 14 filled with the silicon wafers is grabbed by the first manipulator 13 and is to be transported to the separation tank 12, the positioning block 15 is loosened, and the first wafer basket 14 and the silicon wafers are moved together with the first manipulator 13 from the uploading tank 11 to the separation tank 12; the first basket 14 filled with silicon wafers is placed between the positioning blocks 15 in the separation tank 12, and the first robot 13 is released and lifted up to move to just above the upper loading tank 11 to wait for the retrieval of the next empty first basket 14.
After the first wafer basket 14 loaded with silicon wafers is placed in the separation tank 12, the positioning block 15 in the separation tank 12 clamps and fixedly places the first wafer basket 14 on the tank bottom to prevent the first wafer basket 14 from moving in the separation tank 12. The bottom in the separation tank 12 is provided with a movable separation top frame 16, the separation top frame 16 is located between the positioning blocks 15 and arranged parallel to the positioning blocks 15, the upper end face of the separation top frame 16 is provided with a top plate 17, a top column 18 is arranged below the top plate 17, the top column 18 is fixedly connected with the top plate 17, the top column 18 can drive the top plate 17 to move in an up-and-down telescopic mode along the vertical direction, and the top plate 17 is located under the center of the first piece basket 14 and can penetrate through the bottom of the first piece basket 14 and enable a silicon wafer to be clamped and fixed on the upper end face of the top plate. In the process of cleaning the polished silicon wafer, the first wafer basket 14 bearing the silicon wafer can affect the cleaning effect of the silicon wafer, so that the secondary pollution of the first wafer basket 14 to the silicon wafer is avoided for ensuring the cleaning effect of the silicon wafer, and the silicon wafer is required to be separated from the first wafer basket 14 to be cleaned independently. During separation, the first wafer basket 14 is fixed, the top column 18 pushes the top plate 17 to move upwards, the top plate 17 jacks up the silicon wafers and drives the silicon wafers to move upwards together, and therefore the silicon wafers are separated from the first wafer basket 14. After the silicon wafer is separated from the first wafer basket 14, the first wafer basket 14 remains at the bottom of the separation tank 12, and the second robot 23 provided in the cleaning unit 20 for the next process grasps the silicon wafer and moves the silicon wafer from the separation tank 12 to the cleaning unit 20 for cleaning. After the silicon wafer is removed, the top column 18 drives the top plate 17 to retract to the initial position, the positioning block 15 in the separation tank 12 releases the first wafer basket 14, and the first mechanical arm 13 takes the first wafer basket 14 and puts the first wafer basket into the uploading tank 11 to prepare for uploading of the next group of silicon wafers.
The second step is that: the separated silicon wafers are individually cleaned in the cleaning unit 20.
Specifically, the cleaning unit 20 comprises primary cleaning and secondary cleaning, wherein the primary cleaning sequentially comprises a first liquid tank 21 cleaning and a first washing tank 22 cleaning; the secondary cleaning sequentially comprises a second liquid tank 29 cleaning and a second washing tank 210 cleaning.
Specifically, as shown in fig. 3, in one cleaning, the silicon wafer is firstly oxidized and corroded by the chemical liquid in the first liquid tank 21, and then the oxidized and corroded surface layer is cleaned in the first washing tank 22, so as to completely remove the particle pollutants on the surface. The first liquid tank 21 is filled with a liquid containing NH4OH、H2O2And H20 mixed liquid, NH4OH:H2O2:H2The volume ratio of O is 1:1:5-1:2:7, and in order to ensure the removal effect of the particle pollutants on the surface of the silicon wafer, a constant cleaning temperature needs to be maintained, and in the embodiment, the cleaning temperature is 65-80 degrees. NH (NH)4OH、H2O2And H2The mixed liquid medicine of 0 can oxidize and micro-etch the surface of the polished silicon wafer, so that particle pollutants attached to the surface are removed along with the oxide layer, and meanwhile, slight organic pollutants and partial metal pollutants can be removed. A temperature tester (not shown) is arranged in the first washing tank 22 to monitor the temperature of the liquid medicine in the first washing tank, and a heater 28 is arranged at the bottom of the first washing tank 22 to ensure that the temperature of the liquid medicine in the first washing tank is constant. When the temperature tester monitors that the temperature in the first washing tank 22 is lower than 65 degrees, the temperature tester transmits the measured data to the temperature controller, and the temperature controller can control the heater 28 to heat; if the temperature is higher than 80 degrees, alarming is carried out, and the temperature controller controls the heater 28 to stop heating; and the liquid medicine has the best effect of removing particle pollutants on the surface of the silicon wafer in the temperature range.
A liquid level sensor and a supply pipe 27 are also arranged in the first washing tank 21, the liquid level sensor is arranged to ensure the liquid level of the liquid medicine to be constant, and H in the supply pipe 27 is detected when the liquid level sensor monitors that the liquid level reaches a lower limit position2Starting to supplement liquid by an O liquid supplementing pipe; when the liquid surface reaches the upper limit position, the liquid supply is stopped. In order to ensure the stability of the concentration of the chemical in the first wash tank 21, an automatic concentration tester, which is a common instrument in the art, is provided in the first wash tank 21. Such asFruit NH4OH or H2O2Is lower than the set value, NH4OH liquid supply pipe or H2O2And (4) starting to replenish the liquid by the liquid replenishing pipe, replenishing 10-20mL each time, measuring the concentration of the liquid medicine once after replenishing, continuing to replenish the liquid if the concentration of the liquid medicine is still lower than a set value, and circulating the steps until the set concentration value is reached.
In order to improve the cleaning effect, a shaking device and an ultrasonic device are also arranged in the first liquid tank 21.
Specifically, as shown in fig. 3, the shaking device includes a U-shaped bracket 24 and a shaking arm 25 disposed below the bracket 24, the silicon wafer is placed in the bracket 24, the shaking arm 25 can reciprocate up and down under the action of external force, the shaking arm 25 can shake and clean the silicon wafer by driving the bracket 24 to reciprocate up and down, and the shaking arrangement can avoid the difference in cleaning the same batch of particle pollutants, that is, the consistency in removing the particle pollutants of the same batch of silicon wafers is improved, the effect of cleaning the particles and organic pollutants on the surface of the silicon wafer is improved, and the cleaning efficiency is improved.
The ultrasonic device comprises an ultrasonic device 26, the height of the ultrasonic device 26 is consistent with the height of the silicon wafer and is perpendicular to the wall thickness direction of the silicon wafer, and the ultrasonic device 26 can generate ultrasonic waves parallel to the surface of the silicon wafer so as to enable NH in the liquid medicine4OH and H2O2The particles are soaked on the surface of the silicon wafer, then the mixed solution is gradually diffused into the interface, and finally NH is carried out4OH and H2O2The particles are completely infiltrated and become free NH in suspension4OH and H2O2The particles can more effectively remove particle pollutants on the surface of the silicon wafer. After the silicon wafer enters the first liquid tank 21, the ultrasonic device 26 starts to work, the ultrasonic frequency can be 20-50kHz or 1MHz, and the ultrasonic time is 1-5 min.
In the working process of the first liquid tank 21, the temperature of the liquid medicine is constantly kept at 65-80 degrees by a temperature tester and a heater 28 arranged in the first liquid tank 21; then the volume ratio of the mixed liquid medicine is controlled to NH under the combined action of the liquid level sensor, the concentration tester and the liquid medicine supply pipe 274OH： H2O2：H2O is between 1:1:5 and 1:2: 7; after the silicon wafer is placed in the first liquid tank 21, the ultrasonic device 26 and the shaking arm 25 synchronously start to work, the ultrasonic device 26 performs microwave vibration on the silicon wafer in an ultrasonic mode, meanwhile, the shaking arm 25 performs shaking cleaning on the silicon wafer through the bracket 24, after 1-5min of cleaning, the ultrasonic device 26 and the shaking arm 25 synchronously stop working, and the second manipulator 23 moves the silicon wafer from the first liquid tank 21 to the first washing tank 22.
As shown in FIG. 4, the first washing tank 22 is mainly used for removing particle impurities and residual NH on the surface of the silicon wafer4OH and H2O2The surface of the silicon wafer is cleaned by the mixed chemical solution of (3). Wash tank 22 is including the water drainage tank 212 that is located the top and communicate and be located the aqua storage tank 213 of water drainage tank 212 below with water drainage tank 212, be equipped with two shower 214 that upper portion symmetry set up and two shower 214 that the lower part symmetry set up in water drainage tank 212, shower 214 group of upper portion and lower part is located water drainage tank 212 cell body both sides respectively, shower 214 perpendicular to silicon disk thickness direction sets up, four groups of shower 214 all spray rivers towards silicon disk central axis position, form intercrossing's spraying effect to the silicon disk, spray the washing fast with the all-round to the silicon disk.
In the working process of the working procedure, after the water drainage tank 212 is filled with water, the second mechanical arm 23 takes out the silicon wafer from the first liquid tank 21 and puts the silicon wafer into the bracket 24 in the first washing tank 22 for fixed placement, the second mechanical arm 23 is moved away, the control valve between the water drainage tank 212 and the water storage tank 213 is opened, water flow quickly enters the water storage tank 213 from the water drainage tank 212 within 5-10s, the upper spray pipe 214 group and the lower spray pipe 214 group work simultaneously, and the silicon wafer is sprayed in an intersecting manner. After the spraying is finished, the water discharge tank 212 is filled with water, and the third robot 211 moves the silicon wafer from the first washing tank 22 to the second washing tank 29 for secondary washing.
The secondary cleaning mainly uses HCL and H2O2The mixed liquid medicine removes metal pollutants on the surface of the silicon wafer. Specifically, the secondary cleaning sequentially comprises a second liquid tank 29 and a second washing tank 210, and the structures of the second liquid tank 29 and the second washing tank 210 are respectively connected with the first liquid tank 21 and the first washing tankThe grooves 22 have the same structure, and the drawings are omitted and will not be described in detail.
The second liquid tank 29 is filled with HCL and H2O2And H2Mixed liquid of O, HCL, H2O2:H2The volume ratio of O is 1:1:6-1:2:8, the cleaning temperature is constant at 65-80 degrees, and HCL and H are in the temperature2O2The mixed liquid medicine can dissolve alkali metal ions and hydroxides of aluminum, iron and magnesium, in addition, chloride ions in hydrochloric acid and residual metal ions are subjected to a complex reaction to form a complex compound which is easy to dissolve in an aqueous solution, and metal pollutants can be removed from the bottom layer of the silicon wafer. In order to ensure the removal effect of particles on the surface of the silicon wafer, it is necessary to maintain a constant temperature and a constant concentration of the chemical solution as in the first liquid tank 21 while shaking and ultrasonically cleaning the silicon wafer.
The working process of the second liquid tank 29 is the same as that of the first liquid tank 21, and specifically comprises the following steps: the temperature of the liquid medicine is kept constant at 65-80 degrees by a temperature tester and a heater 28 arranged in a second liquid tank 29; the volume ratio of the mixed liquid medicine is controlled to be HCL: H under the combined action of the liquid level sensor, the concentration tester and the liquid medicine supply pipe 272O2:H2O is between 1:1:6 and 1:2: 8; after the silicon wafer is placed in the second liquid tank 29, the ultrasonic device 26 and the shaking arm 25 start to work synchronously, the ultrasonic device 26 performs microwave vibration on the silicon wafer in an ultrasonic mode, meanwhile, the shaking arm 25 performs shaking cleaning on the silicon wafer through the bracket 24, after 1-5min of cleaning, the ultrasonic device 26 and the shaking arm 25 stop working synchronously, and the third manipulator 211 moves the silicon wafer from the second liquid tank 29 to the second washing tank 210.
The second washing tank 210 is mainly used for removing particle impurities and residual HCL and H on the surface of the silicon wafer2O2The mixed chemical solution of (4) cleans the surface of the wafer. The working process of the second washing tank 210 is the same as that of the first washing tank 22, and specifically comprises the following steps: after the water drainage tank 212 is filled with water, the third mechanical arm 211 takes the silicon wafer out of the second liquid tank 29 and places the silicon wafer on the bracket 24 in the second washing tank 210 fixedly, the third mechanical arm 211 is moved away, a control valve between the water drainage tank 212 and the water storage tank 213 is opened, and water flow rapidly enters the water storage tank from the water drainage tank 212 within 5-10sIn the water tank 213, the upper shower 214 group and the lower shower 214 group operate simultaneously to spray the silicon wafers in a cross manner. After the spraying is finished, the drain tank 212 is filled with water, and the fourth robot 42 provided in the drying unit 30 moves the silicon wafer from the second washing tank 210 into the drying unit 29 to be dried and cleaned.
The third step: the cleaned silicon wafer is subjected to a drying process in a drying unit 30.
Specifically, the drying unit 30 sequentially comprises a slow-pulling tank 31 and a drying tank 32, and the integrated unit 40 and the drying unit 30 share the fourth manipulator 42, that is, the fourth manipulator 42 moves the silicon wafer out of the second washing tank 210 and sequentially moves the silicon wafer into the slow-pulling tank 31 and the drying tank 32; then, the fourth robot 42 moves the dried silicon wafer from the drying tank 32 to the integrating tank 41, and loads the cleaned silicon wafer into the second wafer basket 43.
The purpose of the slow lifting groove 31 is to slowly lift the silicon wafer by the fourth manipulator 42, so that the water film on the surface of the silicon wafer naturally flows down, and the formation of watermarks on the surface of the silicon wafer after being dried is avoided. After the slow-lift tank 31 is cleaned, the fourth robot 42 moves the silicon wafer into the drying tank 32.
The drying tank 32 is provided to thoroughly dry the silicon wafer after the silicon wafer is subjected to the slow-pulling tank 31, and the whole drying process is performed in a high-purity nitrogen atmosphere. After the silicon wafer is placed in the drying groove 32, high-purity nitrogen sweeps the silicon wafer through a sweeping opening to take away moisture on the surface of the silicon wafer, a hot exhaust opening exhausts the gas, and after sweeping is carried out for 10-60min, a heating wire starts to heat and keeps the temperature at 40-70 ℃ for 1-5 min.
The fourth step: the cleaned silicon wafer is loaded into a second wafer basket 44 in the combination unit 40.
Specifically, as shown in fig. 5, the combining unit 40 includes a combining groove 41, and positioning blocks 43 are symmetrically disposed at the bottom of the combining groove 41, and the positioning blocks 43 have the same structure and function as the positioning blocks 15, and will not be described in detail herein. The empty second sheet basket 44 is fixed in advance between the positioning blocks 43 at the bottom of the combining groove 41, and the second sheet basket 44 has the same structure as the first sheet basket 14 and is omitted here. Then the silicon wafer in the drying tank 32 is placed in the wafer basket 44 by the fourth manipulator 42, and the combination operation of the cleaned silicon wafer and the second wafer basket 44 is completed.
The utility model provides a cleaning method reduces the secondary pollution that basket of flowers and manipulator caused to the washing of silicon disk furthest to can get rid of remaining liquid medicine and pollutant on the polishing back silicon disk surface completely, the cleaning performance is good and the cleaning efficiency is high.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (10)
1. A semiconductor polishing pad cleaning apparatus, comprising:
a separation unit: the first wafer basket is used for separating the polished silicon wafer from the first wafer basket loaded with the silicon wafer;
a cleaning unit: the cleaning device comprises a plurality of cleaning devices which are continuously arranged and used for cleaning the silicon wafer;
a combination unit: loading the cleaned silicon wafer into a second wafer basket;
and independent mechanical hands are respectively arranged in the separation unit, the cleaning unit and the combination unit to move the first wafer basket or the silicon wafer.
2. The semiconductor polishing pad cleaning apparatus according to claim 1, wherein the separation unit comprises a separation tank and a movable separation top frame disposed in the separation tank, the separation top frame penetrating the bottom of the first pad basket and separating the silicon wafer from the first pad basket.
3. The semiconductor polishing pad cleaning apparatus according to claim 2, wherein the separation unit further comprises an upper loading tank disposed on a side of the separation tank remote from the cleaning unit, and a first robot arm that transfers the first wafer basket together with the silicon wafer from the upper loading tank to the separation tank.
4. The semiconductor polishing sheet cleaning apparatus according to claim 3, wherein the cleaning unit includes a first liquid tank and a second liquid tank, the first liquid tank being disposed adjacent to the separation unit; a first washing groove and a second washing groove are arranged in front of and behind the second liquid groove respectively, and the first washing groove is located between the first liquid groove and the second liquid groove.
5. The semiconductor polishing pad cleaning apparatus according to claim 4, wherein the cleaning unit further comprises a second robot and a third robot, the second robot moving the silicon wafer from the separation unit to the first liquid tank and the first liquid tank in sequence for cleaning; and the third manipulator sequentially moves the silicon wafer from the first washing tank to the second liquid tank and the second washing tank for cleaning.
6. The semiconductor polishing pad cleaning apparatus according to claim 5, wherein a shaking device and an ultrasonic device are provided in each of the first liquid tank and the second liquid tank, the shaking device including a holder for holding the silicon wafer and a shaking arm disposed below the holder; the shaking arm can drive the silicon wafer to carry out shaking cleaning through the bracket; the ultrasonic device comprises an ultrasonic device which is arranged in the first liquid tank and the second liquid tank.
7. The semiconductor polishing pad cleaning apparatus according to claim 6, wherein a liquid level sensor, a concentration tester and a chemical supply line are further provided in each of the first liquid tank and the second liquid tank.
8. The semiconductor polishing pad cleaning apparatus according to any one of claims 4 to 7, wherein the integrated unit comprises an integrated tank in which the second pad basket is previously placed, and a fourth robot arm which loads the cleaned silicon wafer into the second pad basket.
9. The semiconductor polishing sheet cleaning apparatus according to claim 8, wherein positioning means for fixing the sheet basket are provided at the bottoms of the upper loading bath, the separation bath and the unitizing bath.
10. The apparatus according to claim 9, wherein a drying unit is further provided between the integrated tank and the cleaning unit, the drying unit comprising a slow-lift tank and a drying tank in this order, and the fourth mechanism moves the silicon wafer out of the second washing tank and moves the silicon wafer into the slow-lift tank, the drying tank, and the integrated tank in this order.
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| CN202020188596.3U CN211700203U (en) | 2020-02-20 | 2020-02-20 | Semiconductor polished wafer cleaning equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180369A (en) * | 2020-02-20 | 2020-05-19 | 天津中环领先材料技术有限公司 | Semiconductor polished wafer cleaning equipment and cleaning method |
| CN118558035A (en) * | 2024-07-31 | 2024-08-30 | 国镓芯科(成都)半导体科技有限公司 | Movable cleaning device with solid-liquid separation function for reaction kettle |
-
2020
- 2020-02-20 CN CN202020188596.3U patent/CN211700203U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180369A (en) * | 2020-02-20 | 2020-05-19 | 天津中环领先材料技术有限公司 | Semiconductor polished wafer cleaning equipment and cleaning method |
| CN118558035A (en) * | 2024-07-31 | 2024-08-30 | 国镓芯科(成都)半导体科技有限公司 | Movable cleaning device with solid-liquid separation function for reaction kettle |
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