JP3540550B2 - Processing device and processing method - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a processing apparatus and a processing method for performing a predetermined process while rotating a substrate such as a semiconductor wafer or an LCD glass plate.
[0002]
[Prior art]
2. Description of the Related Art Generally, in a semiconductor device manufacturing process, a cleaning processing system is used to remove contamination such as particle organic contaminants and metal impurities attached to a surface of a substrate of a semiconductor wafer (hereinafter, referred to as “wafer”). ing. As one of the cleaning processing systems for cleaning a wafer, a single-wafer cleaning processing system using a spin-type device is generally known.
[0003]
A single-wafer cleaning system includes, for example, a mounting portion on which a carrier containing a wafer can be mounted, a wafer before cleaning is taken out of the carrier mounted on the mounting portion, and the cleaned wafer is transferred to a carrier. And a cleaning unit provided with a processing unit for cleaning and drying the wafers, and a transfer arm for transferring the wafers between the discharge and transfer unit and the cleaning processing unit. . Then, the wafer taken out of the carrier placed on the placing section by the take-out / in section is carried to the cleaning section by the carrying arm. After a predetermined cleaning and drying process is performed on the wafer, and after a predetermined processing step in the cleaning processing unit is completed, the wafer is carried out of the cleaning processing unit by the transfer arm and is again loaded into the carrier via the unloading and loading unit. You.
[0004]
The processing apparatus provided in the cleaning system includes a container for storing the wafer, a spin chuck for rotatably holding the wafer in the container, and a supply for supplying a processing fluid to the surface of the wafer held by the spin chuck. Means are provided. As the processing fluid, a chemical solution such as a hydrofluoric acid solution or pure water is used for cleaning the surface of the wafer, and N2 as an inert gas is used for drying the surface of the wafer._TwoGas or IPA (isopropyl alcohol) vapor is used.
[0005]
Then, when performing a predetermined processing step on the wafer, the wafer is rotated by holding the wafer on a spin chuck while being positioned at a predetermined height in the container. Then, a cleaning liquid is supplied from a supply unit to the surface of the rotating wafer to perform a cleaning process, thereby removing particle organic contaminants and the like attached to the surface of the wafer W. After the cleaning with the chemical solution, pure water is supplied from a supply unit to the surface of the rotating wafer to perform a rinsing process. Finally, N_TwoA dry gas, such as a gas, is supplied to the surface of the rotating wafer in the same manner to spin dry. In this spin drying, the spin chuck is further rotated at a high speed to blow off pure water from the wafer surface,_TwoGas is blown onto the surface of the wafer to promote drying. Thus, predetermined processing steps are continuously performed while rotating the wafer in the container.
[0006]
[Problems to be solved by the invention]
By the way, in a conventional processing apparatus, when a chemical solution is supplied from a supply unit, the chemical solution scatters on the inner wall of the container and adheres as it is. Since the chemical solution is scattered every time the wafer processing is repeated, residual components of the chemical solution stick to the inner wall of the container. For example, adverse effects on the rinsing treatment with pure water and particles generated from the attached chemical solution components contaminate the wafer. I have anxiety.
[0007]
Further, the processing fluid such as a chemical solution is configured to be collected from the container after the processing of the wafer is completed, adjusted, returned to the supply unit, and reused again in the processing of the wafer. Here, in a conventional processing apparatus, a configuration for recovering and reusing a processing fluid such as a chemical solution is provided as a separate unit from the processing apparatus. For this reason, the installation area related to the cleaning system increases, and the finite area in the factory decreases. In addition, a circuit for collecting the chemical solution and supplying the chemical solution to the supply means again has a very long distance. For this reason, various problems occur, such as an increase in the capacity of the pump for supplying the chemical solution or a decrease in the temperature of the chemical solution accompanying an increase in the circulation time of the chemical solution.
[0008]
SUMMARY OF THE INVENTION An object of the present invention is to provide a processing apparatus and a processing method capable of washing away a processing fluid such as a chemical solution attached to a wall, reducing an installation area, and shortening a recovery circuit.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a container for accommodating a substrate, holding means for rotatably holding the substrate in the container, and a substrate held by the holding means.ChemicalWhenPure waterA processing apparatus provided with supply means for supplying the substrate, wherein the substrate is configured to be movable up and down so as to move the substrate to a first height in the container and a second height higher than the first height, The supply means is configured to move the substrate to a first height.ChemicalAnd moving the substrate to the second height by lowering the container.Pure waterAnd is shaken around by the rotation of the substrate at a second height higher than the first heightPure waterRemains on the inner wall of the containerChemicalIs configured to wash off from aboveConnecting a collecting circuit to the bottom surface of the container, storing a chemical liquid collected through the collecting circuit, a tank disposed below the container, and supplying the chemical liquid stored in the tank to the supply means. A return circuit is provided for return, and a drain circuit is connected to the recovery circuit via a three-way valve. By switching the three-way valve, pure water is discharged from the drain circuit, and only the chemical is recovered in the tank. A circulation circuit for adjusting a chemical solution is connected to the tank, the return circuit is connected to the circulation circuit via a three-way valve, and a pump, a damper, a heater, A filter is provided.
[0010]
According to this processing apparatus, when processing the substrate held by the holding means in the container of the processing apparatus, the substrate is first moved to the first height in the container. Then, while rotating the substrate by the holding means,ChemicalIs supplied to the surface of the rotating substrate, and a predetermined process is performed on the substrate. Next, the substrate is raised to a second height higher than the first height in the container by lowering the container. And likewise from the supply meansPure waterIs supplied to the rotating substrate to perform predetermined processing on the substrate. Thus, the substrate was swung around by the rotation of the substrate at the second higher position higher than the first height.Pure waterRemains on the inner wall of the containerChemicalFrom above.
[0011]
In this processing apparatus, the substrate is lifted above the container.The container can be lowered freelyIt is preferable to configure. Thereby, the substrate can be easily carried in and out of the container.
[0012]
Furthermore,A collecting circuit was connected to the bottom of the container, and the container was recovered through the collecting circuit.First treatment liquidAnd a tank disposed below the container and stored in the tank.First treatment liquidIt is preferable to provide a return circuit for returning to the supply means. Collected from the bottom of the container by the collection circuitFirst treatment liquidIs stored and adjusted in the tank and then adjustedFirst treatment liquidIs returned to the supply means by the return circuit and can be reused for processing the substrate.
[0013]
A drain circuit is connected to the recovery circuit via a three-way valve. By switching the three-way valve, the second processing liquid used in the rinsing process is discharged from the drain circuit, and is discharged to the tank. May be configured to collect only the first processing liquid. In this case, a circulation circuit for adjusting the first processing liquid may be connected to the tank.With such a configuration, collection and reuse of the processing fluid such as a chemical solution can be performed smoothly.
[0014]
The present invention also providesIn a processing method of supplying a chemical solution and pure water to a substrate rotated in a container to process the substrate, when supplying the chemical solution, the substrate is moved to a first height in the container and used for processing. When the chemical solution is collected in the tank and the chemical solution stored in the tank is circulated through the circulation circuit, it is adjusted by the heater and the filter, and the adjusted chemical solution is reused in the processing again to supply the pure water. Moving the substrate to a second height higher than the first height in the container by lowering the container, thereby rotating the substrate at a second height higher than the first height to rotate around the substrate. The chemical solution remaining on the inner wall of the container is washed away from the top with the shaken pure water, and the washed pure water is drained from a drain circuit.
The present invention also provides a processing method of supplying a chemical solution and pure water to a substrate rotated in a container, wherein the substrate is moved to a first height in the container when the chemical solution is supplied. When supplying the pure water, the substrate is moved to a second height higher than the first height in the container by lowering the container, so that a second height higher than the first height is provided. The pure water which has been shaken around by the rotation of the substrate is configured to wash away the chemical solution remaining on the inner wall of the container from above, and after the pure water is supplied to the substrate at the second height for processing. And drying the substrate, wherein the IPA vapor and N2 are applied to the rotating substrate while being positioned at the first height. ₂ After supplying the gaseous gas mixture, the substrate is positioned at a second height higher than the first height by lowering the container, and the N ₂ It is performed by supplying gas.
After supplying the chemical solution, the pure water may be supplied before the substrate is moved to the second height in the container.After the drying process is completed, the substrate may be lifted further above the container by further lowering the container.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described. This embodiment is configured as a cleaning processing system configured to consistently perform wafer loading, cleaning, drying, and carrier unloading in carrier units. It is something. FIG. 1 is a plan view of a cleaning processing system 1 for describing a preferred embodiment of the present invention.
[0016]
The cleaning system 1 includes a mounting section 2 on which a carrier C containing a wafer W can be mounted, a wafer before cleaning is taken out of the carrier C mounted on the mounting section 2, and a wafer W after cleaning is removed. Arm 3 for carrying wafers into carrier C, cleaning unit 4 for performing predetermined cleaning and drying processes on wafer W, and conveyance for carrying wafer W between cleaning unit 4 and unloading arm 3. An arm 5 is provided.
[0017]
The mounting section 2 is configured to be able to mount four carriers C each containing 25 wafers. Then, the wafer W before cleaning is loaded into the cleaning processing system 1 by the carrier C via the mounting section 2, and the wafer W after cleaning is unloaded from the cleaning processing system 1 by the carrier C. Have been.
[0018]
The take-in / carry-in arm 3 is configured to move in the horizontal (X, Y) direction, move up and down, and rotate about a vertical axis. It is configured to be able to perform an operation of taking out the wafer W one by one and transferring it to the transfer arm 5 and an operation of receiving the washed wafer W from the transfer arm 5 and loading the wafers W one by one into the carrier C.
[0019]
In the cleaning section 4, processing devices 7, 8, and 9 for cleaning and drying the wafer are sequentially arranged on both sides of the transfer path 6 of the transfer arm 5, so that the processing can proceed simultaneously on both sides. .
[0020]
The transfer arm 5 is configured to move in the horizontal (X, Y) direction, move up and down, and rotate about a vertical axis. It is configured so that the wafer W can be exchanged with the unloading and loading arm 3. Then, an operation of transporting the wafer W received from the unloading / incoming arm 3 to the predetermined processing apparatus 7, 8, 9 is performed, and the cleaned wafer W is taken out of the processing apparatus 7, 8, 9 to be cleaned. To carry out and transfer to the transfer arm 3.
[0021]
In the cleaning processing system 1 configured as described above, the wafer W in the cassette C mounted on the mounting unit 2 is transferred to the transfer arm 5 via the unloading and loading arm 3 and is processed by the processing devices 7 and 8. , 9 sequentially. That is, the wafer W is first subjected to a cleaning process using a chemical solution in the processing device 7, and then to a rinsing process using pure water and a drying process using spin. The wafer W processed by the processing device 7 is subsequently subjected to a cleaning process in the processing device 8 using a chemical solution different from that of the processing device 7, followed by a rinsing process with pure water and a drying process by spinning. Be done. Then, finally, in the processing device 9, final cleaning is performed by a rinsing process with pure water, and a drying process by spin is performed.
[0022]
The above arrangement and combination of the processing apparatuses can be arbitrarily combined depending on the type of cleaning of the wafer W. For example, a certain processing device may be reduced, or conversely, another processing device may be added.
[0023]
Next, the configuration of the processing devices 7, 8, 9 will be described. The processing apparatuses 7, 8, and 9 of the cleaning processing system 1 according to the embodiment of the present invention have the same configuration, and therefore, the processing apparatus 7 will be described as a representative.
[0024]
FIG. 2 is a cross-sectional view showing an upper main part in the unit 7a of the processing apparatus 7. FIG. 3 is a circuit diagram of the entire unit 7a of the processing device 7. In a casing 7b of the unit 7a, a spin chuck 10 as a holding means for rotatably holding a wafer W as a substrate, a container 20 surrounding the outer periphery of the spin chuck 10 and the wafer W, and a lower part thereof, and a wafer W Supply means 30 for supplying a chemical solution as a first processing fluid and pure water as a second processing fluid to the surface ofIPA (isopropyl alcohol) vapor and N ₂ gasIs provided. In this case, IPA vapor and N₂Mixed with gasGas mixtureMay be used.
[0025]
The spin chuck 10 includes a mounting plate 13 mounted on a rotating shaft 12 that is rotated by a motor 11, and a holding portion 14 suspended from a peripheral portion of the mounting plate 13. The holding unit 14 is configured to hold a peripheral portion of the wafer W while the wafer W is floated from the mounting plate 13.
[0026]
In the illustrated example, a ball screw shaft 21 is attached to the lower surface on the left side of the container 20, and a nut 22 is screwed to the ball screw shaft 21. The rotational power of the motor 23 is transmitted to the nut 22 via a pulley 24 and a belt 25. Thus, the container 20 is configured to be able to move up and down by the rotation of the motor 23.
[0027]
Here, when the container 20 moves up and down to the position of the container 20 indicated by the solid line in FIG. 2 by the rotation of the motor 23, the wafer W held by the spin chuck 10 is moved to the second position in the container 20. It is moved to the height of. From this state, when the motor 23 is further driven to rotate in the forward direction, the container 20 moves upward to the position of the container 20 'indicated by the two-dot chain line in FIG. As a result, the wafer W held by the spin chuck 10 relatively moves down from the second height in the container 20 and moves to the first height in the container 20. As described above, the container 20 is configured to be able to move up and down in order to move the wafer W to the first height in the container 20 and the second height higher than the first height.
[0028]
When the motor 23 is rotated in the reverse direction from the position of the container 20 indicated by the solid line in FIG. 2, the container 20 moves down to the position of the container 20 ″ indicated by the two-dot chain line in FIG. As a result, the wafer W held by the spin chuck 10 is moved above the upper end of the container 20. The mounting plate 13 of the spin chuck 10 is thus moved to the upper end of the container 20. When the wafer W is lifted further upward, the wafer W is lifted above the container 20, so that the wafer W can be transferred to and from the spin chuck 10. In this manner, the wafer W is placed above the container 20. The container 20 is configured to be able to move up and down for lifting.
[0029]
As shown in FIG. 2, a nozzle 32 provided in the supply means 30 has a chemical solution supply circuit 35 having an on-off valve 34 and a pure water having an on-off valve 36 for supplying a chemical solution and pure water. The supply circuits 37 are connected to each other, and further, a return circuit 62 described later is connected. The nozzle portion 32 is fixed to the tip of the moving member 38, and the nozzle portion 32 moves above the wafer W held by the spin chuck 10 as the moving member 38 moves by a driving mechanism (not shown). At the same time, it is configured to be able to retreat from above the wafer W. In addition, the IPA vapor or N₂In order to supply gas, an IPA vapor supply circuit 42 having an on-off valve 41 and an N₂The supply circuits 44 are respectively connected. The nozzle unit 40 is fixed to the tip of the moving member 45, and the nozzle unit 40 moves above the wafer W held by the spin chuck 10 as the moving member 45 moves by a driving mechanism (not shown). At the same time, it is configured to be able to retreat from above the wafer W. Note that IPA vapor and N₂Mixed with gasGas mixtureThe IPA vapor supply circuit 42 may be configured to be able to supply.
[0030]
On the other hand, the chemical and pure water supplied from the supply means 30, the IPA vapor supplied from the supply means 31 and N_TwoEach gas is discharged from the inside of the container 20 through a discharge pipe 26 provided at the bottom of the container 20. As shown in FIG. 3, a recovery circuit 50 is connected to the discharge pipe 26, and an outlet of the recovery circuit 50 is connected to a tank 51 disposed below the container 20. A gas-liquid separation mechanism 52 and a drain circuit 53 are arranged between the recovery circuit 50 and the tank 51 in order from the top, and the drain circuit 53 is connected to the recovery circuit 50 via an on-off valve 54. .
[0031]
Here, the gas-liquid separation mechanism 52 converts the processing fluid flowing from the discharge pipe 26 through the recovery circuit 50 into a processing liquid such as a chemical solution or pure water and IPA vapor or N2._TwoThe gas is separated into a processing gas such as gas, and bubbles mixed in the chemical are removed from the chemical. That is, in the processing fluid flowing into the gas-liquid separation mechanism 52, IPA vapor or N_TwoA processing gas such as a gas is exhausted from an exhaust port 55 provided above the gas-liquid separation mechanism 52, and a processing liquid such as a chemical solution or pure water flows along an inclined table 56 installed in the separation mechanism 52. I have. During this time, bubbles are removed from the chemical solution, the gas component is exhausted from the exhaust port 55, and the liquid component flows into the recovery circuit 50 again from the drain port 57 on the bottom surface of the gas-liquid separation mechanism 52.
[0032]
By the switching operation of the three-way valve 54, the pure water used in the rinsing process in the processing liquid separated by the gas-liquid separation mechanism 52 flows into the drain circuit 53 and is drained from the recovery circuit 50. It has become. The tank 51 is configured to store only a chemical solution in the processing fluid. As described above, by providing the tank 51 below the container 20, the distance of the collection circuit 50 is shortened, and the chemical liquid is quickly collected into the tank 51 by dropping its own weight.
[0033]
Further, a circulation circuit 60 for adjusting the chemical solution stored in the tank 51 is connected to the tank 51, and a return circuit 62 is connected to the middle of the circulation circuit 60 via a three-way valve 61. The outlet of the return circuit 62 is connected to the supply means 30, and is configured to return the chemical solution in the tank 51 adjusted by the circulation circuit 60 to the nozzle 32 of the supply means 30.
[0034]
Here, the inlet of the circulation circuit 60 is connected to the bottom surface of the tank 51, and a pump 63, a damper 64, a heater 65, and a filter 66 are sequentially arranged in the middle of the circulation circuit 60. It is connected above 50. Then, the chemical liquid collected in the tank 51 from the recovery circuit 50 is caused to flow into the circulation circuit 60 without flowing the chemical liquid to the return circuit 62 side by the switching operation of the three-way valve 61. Then, the chemical liquid flowing into the circulation circuit 60 is caused to flow in the order of the damper 64, the heater 65, and the filter 66 by the operation of the pump 63 to regulate and clean the temperature, and then circulated again in the tank 51. .
[0035]
The chemical solution in the tank 51 adjusted by the circulation circuit 60 is configured not to circulate to the circulation circuit 60 by switching the three-way valve 61 but to flow into the return circuit 62 by the operation of the pump 63. ing. In this way, the chemical solution returned to the nozzle unit 32 via the return circuit 62 is reused for the cleaning process of the wafer W.
[0036]
In addition, the spin chuck 10, the container 20, the supply means 30, the recovery circuit 50, the tank 51, and the return circuit 62 are configured to be arranged in a single unit 7a.
[0037]
In addition, since the processing devices 8 and 9 have the same configuration as the processing device 7, detailed description is omitted.
[0038]
Next, processing of the wafer W performed in the cleaning processing system 1 configured as described above will be described. First, a carrier C (not shown) places a carrier C containing, for example, 25 wafers W that have not been cleaned yet, on the placement unit 2. Then, the wafer W is taken out from the carrier C placed on the placing section 2 and transferred to the transfer arm 5 via the take-out / in arm 3, and the wafer W is transferred to the processing devices 7, 8, 9 sequentially. You. Thus, cleaning is performed to remove impurities such as organic contaminants and particles attached to the surface of the wafer W.
[0039]
Here, the cleaning process in the processing device 7 will be described as a representative. As shown in FIG. 4, the container 20 is moved downward by the rotational driving of the motor 23 in the reverse direction, and the spin chuck 10 is lifted above the container 20. The wafer W is mounted on the mounting plate 13 of the spin chuck 10 lifted above the container 20. Then, as shown in FIG. 5, the container 20 is moved upward by the rotation of the motor 23 in the forward direction, and the wafer W held by the spin chuck 10 is relatively moved downward in the container 20 to perform the first operation. To the height of.
[0040]
Subsequently, a cleaning process is started on the wafer W. As described above with reference to FIG. 2, the spin chuck 10 rotates at a predetermined rotation speed by driving the motor 11. Further, the nozzle unit 32 is moved above the wafer W. Then, with the wafer W positioned at the first height as shown in FIG. 5, a chemical solution as a first processing fluid is discharged from the nozzle unit 32. Thus, the cleaning process is performed by supplying the chemical solution to the rotating wafer W. In this case, the chemical solution supplied into the container 20 spreads over the entire surface of the wafer W by the rotation of the wafer W, and performs a uniform cleaning process. Then, by the rotation of the wafer W, the chemical liquid that has been shaken off around the wafer W and adhered to the inner wall of the container 20 flows along the inner wall and is discharged from the discharge pipe 26. Then, as described above with reference to FIG. 3, the chemical flows into the recovery circuit 50 via the discharge pipe 26. The chemical liquid that has flowed into the recovery circuit 50 is subjected to bubble removal by the gas-liquid separation mechanism 52, falls under its own weight, and is quickly stored in the tank 51. The chemical solution stored in the tank 51 circulates in the circulation circuit 60 by the operation of the pump 63, and is adjusted by the heater 65 and the filter 66 in the circulation circuit 60. Further, the adjusted chemical solution is returned to the nozzle section 32 again through the return circuit 62, and is reused in the cleaning process. Then, after a predetermined time has elapsed, the discharge of the chemical solution from the nozzle unit 32 stops, and the cleaning process ends.
[0041]
Next, as shown in FIG. 6, the rotation of the motor 23 in the reverse direction causes the container 20 to move downward, and the wafer W held by the spin chuck 10 is relatively moved upward within the container 20 to move the wafer W upward. Move to a second height that is higher than the first height. Then, with the wafer W positioned at the second height, pure water as a second processing fluid is discharged from the nozzle unit 32. Thereafter, a rinsing process is performed by supplying pure water to the rotating wafer W. In this case, the pure water supplied into the container 20 spreads over the entire surface of the wafer W by the rotation of the wafer W, and performs a uniform rinsing process. Then, at the second higher position higher than the first height, the pure water shaken off around the wafer W by the rotation of the wafer W cleans the chemical component remaining on the inner wall inside the container 20 from above. Wash off. Then, as described above with reference to FIG. 3, the pure water flows into the recovery circuit 50 via the discharge pipe 26. The pure water flowing into the recovery circuit 50 flows into the drain circuit 53 by switching the three-way valve 54 and is drained. Then, after a lapse of a predetermined time, the discharge of the pure water from the nozzle unit 32 stops, and the rinsing process ends.
[0042]
Subsequently, a drying process is started on the wafer W. As described above with reference to FIG. 2, the spin chuck 10 is rotated at a higher speed by driving the motor 11, and the nozzle unit 32 is retracted from above the wafer W, and the nozzle unit 40 is moved above the wafer W. Then, as shown in FIG. 5, the container 20 is moved upward by the rotation of the motor 23 in the forward direction, and the wafer W held by the spin chuck 10 is relatively lowered and moved in the container 20 again. Move to the height of 1. Then, with the wafer W positioned at the first height,IPA vapor and N ₂ GasThe mixed gas is discharged from the nozzle unit 40. After that, IPA vapor and N₂Drying of pure water remaining on the surface of the wafer W by supplying a gas mixture is performed. The IPA vapor supplied to the surface of the wafer W causes a Maragony effect, and the rotation of the spin chuck 10 effectively removes pure water from the surface of the wafer W. On the other hand, the IPA vapor supplied into the container 20 is exhausted from the discharge pipe 26 and flows into the recovery circuit 50 as described above with reference to FIG. The IPA vapor flowing into the recovery circuit 50 flows into the gas-liquid separation mechanism 52 and is exhausted from the exhaust port 55. Then, after a predetermined time has elapsed, the discharge of the IPA vapor from the nozzle unit 40 is stopped.
[0043]
Next, as shown in FIG. 6, the rotation of the motor 23 in the reverse direction causes the container 20 to move downward, and the wafer W held by the spin chuck 10 is relatively moved upward within the container 20 to move the wafer W upward. Move to a second height that is higher than the first height. Then, with the wafer W located at the second height,₂A drying process is performed by discharging gas from the nozzle unit 40. Thus, the N supplied into the container 20₂The gas is exhausted from the discharge pipe 26 and flows into the recovery circuit 50 as described above with reference to FIG. N flowing into the recovery circuit 50₂The gas flows into the gas-liquid separation mechanism 52 and is exhausted from the exhaust port 55. Then, after a predetermined time has elapsed, the N₂The gas discharge stops, and the drying process ends. Thereafter, the nozzle unit 40 is retracted from above the wafer W. Thus, in the drying process of the wafer W,IPA steamWhen supplying, the wafer W is moved to the first height in the container 20 andN ₂ GasWhen the wafer W is supplied, the wafer W is moved to the second height in the container 20, so that the IPA component can be prevented from remaining on the inner wall of the container 20 as described above. When performing the drying process, IPA vapor and N₂When a gas mixture is supplied, N₂The supply of the gas is not limited to the case where the wafer W is moved to the second position, and the drying process of the wafer W may be performed by freely moving the container 20 up and down.
[0044]
Next, as shown in FIG. 7, the container 20 is moved downward by the rotation of the motor 23 in the reverse direction, and the spin chuck 10 is lifted above the container 20. Thus, the wafer W having undergone the predetermined processing steps is carried out of the processing apparatus 7. On the other hand, a new wafer W is stored in the container 20 in the processing apparatus 7, and the cleaning process and the drying process of the wafer W are repeated. In this case, by switching the three-way valve 61, the adjusted chemical solution in the tank 51 flows into the return circuit 62 by the operation of the pump 65, is returned to the nozzle unit 32, and is subjected to a new wafer W cleaning process. To be reused.
[0045]
Thereafter, the wafer W carried out of the processing apparatus 7 is transported to the next processing apparatus 8, and the same cleaning processing is performed in the processing apparatus 8. Finally, the wafer W is finally cleaned with pure water in the processing apparatus 9. And dried. Thus, the wafers W having undergone the processing steps in the cleaning processing unit 4 are stored again in the carrier C, and subsequently, the same processing is performed on the remaining 24 wafers W one by one. When the processing of the 25 wafers W is completed in this way, the wafers W are carried out of the cleaning processing system 1 by the carrier C.
[0046]
Thus, according to the processing apparatus 7, 8, 9 of the embodiment of the present invention, when supplying the chemical solution, the wafer W is moved to the first height in the container 20, and when supplying the pure water, Moves the wafer W to a second height higher than the first height in the container 20, so that the rotation of the wafer W causes the chemical component remaining on the inner wall of the container 20 to be shaken off around the wafer W. ， It can be washed off with pure water. Therefore, it is possible to keep the inside of the container 20 clean and prevent particle contamination of the wafer W. Also, by disposing the spin chuck 10, the container 20, the supply means 30, the recovery circuit 50, the tank 51, and the return circuit 62 in a single unit 7a, the distance between the recovery circuit 50 and the return circuit 62 can be shortened. Chemical solution can be collected and reused in one device area. Therefore, the installation area of the cleaning system 1 can be reduced, the limited installation area in the factory can be effectively used, and the recovery and reuse of the chemical can be performed smoothly. As a result, the semiconductor device can be manufactured smoothly, and its productivity can be improved. Although the main description has been given of the cleaning system 1 for cleaning the wafer W as an example, the present invention can also be applied to a cleaning unit and a cleaning system that handles another substrate such as an LCD substrate.
[0047]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the inside of a container can be made clean by preventing a processing fluid, such as a chemical | medical solution adhered to the wall, to prevent particle contamination of the wafer W, and the installation area in a factory can be reduced by reducing the installation area. Can be effectively utilized, and further, by shortening the distance of the recovery circuit, the recovery and reuse of the processing fluid such as a chemical solution can be performed smoothly. Therefore, for example, the productivity in manufacturing a semiconductor device can be improved.
[Brief description of the drawings]
FIG. 1 is a plan view of a cleaning system including a processing apparatus according to an embodiment of the present invention.
FIG. 2 is a sectional view of a processing apparatus.
FIG. 3 is a circuit diagram of a unit in the processing apparatus.
FIG. 4 is an explanatory view showing a state where a wafer W before processing is lifted above a container.
FIG. 5 is an explanatory view showing a state where a wafer W is moved to a first height in a container when supplying a first processing fluid.
FIG. 6 is an explanatory diagram showing a state where a wafer W is moved to a second height in a container when supplying a second processing fluid.
FIG. 7 is an explanatory view showing a state where a processed wafer W is lifted above a container.
[Explanation of symbols]
W wafer
1 Cleaning system
7, 8, 9 processing unit
7a unit
10 Spin chuck
20 containers
30, 31 supply means
50 Collection circuit
51 tanks
52 Gas-liquid separation mechanism
53 drain circuit
62 Return circuit

Claims (5)

A processing apparatus comprising: a container for storing a substrate; holding means for rotatably holding the substrate in the container; and supply means for supplying a chemical solution and pure water to the substrate held by the holding means.
The container is configured to be movable up and down so as to move the substrate to a first height in the container and to a second height higher than the first height, and the supply unit controls the substrate to a first height. supplying a chemical liquid in a state of being moved to the configured the substrate by lowering the container so as to supply the pure water while being moved to the second height, the second greater than the first height The pure water that has been shaken around by the rotation of the substrate at the height is configured to wash away the chemical solution remaining on the inner wall of the container from above ,
A recovery circuit is connected to the bottom surface of the container, and a tank disposed below the container for storing the chemical liquid recovered through the recovery circuit, and the chemical liquid stored in the tank is returned to the supply means. A return circuit is provided,
A drain circuit is connected to the recovery circuit via a three-way valve. By switching the three-way valve, pure water is discharged from the drain circuit, and only the chemical is recovered in the tank.
A circulation circuit for adjusting the chemical is connected to the tank,
The return circuit is connected to the circulation circuit via a three-way valve,
A processing device, wherein the circulation circuit is provided with a pump, a damper, a heater, and a filter. 3. The processing apparatus according to claim 2, wherein the container is configured to be able to descend so as to lift the substrate above the container. In a treatment method of supplying a chemical solution and pure water to a substrate rotated in a container and treating the substrate,
When supplying the chemical solution, the substrate is moved to a first height in the container, and the chemical solution used for the treatment is collected in a tank, and the chemical solution stored in the tank is circulated through a circulation circuit. , Heater and filter, and the adjusted chemical solution is reused for processing again.
When supplying the pure water, the substrate is moved to a second height higher than the first height in the container by lowering the container, so that the second height is higher than the first height. The method according to claim 1, wherein the chemical solution remaining on the inner wall of the container is washed away from above with pure water shaken around by rotation of the substrate, and the rinsed pure water is drained from a drain circuit. In a treatment method of supplying a chemical solution and pure water to a substrate rotated in a container and treating the substrate,
When supplying the chemical solution, the substrate is moved to a first height in the container,
When supplying the pure water, the substrate is moved to a second height higher than the first height in the container by lowering the container, so that the second height is higher than the first height. The pure water that has been shaken around by the rotation of the substrate is configured to wash away the chemical solution remaining on the inner wall of the container from above,
After supplying and treating the substrate with pure water at the second height, the substrate is dried,
The drying process includes applying IPA vapor and N.sub.2 to the substrate rotating at the first height. ₂ After the gas mixture is supplied, the substrate is positioned at a second height higher than the first height by lowering the container, and the N ₂ A processing method characterized by being performed by supplying a gas. 5. The processing method according to claim 3, wherein after supplying the chemical solution, the pure water is supplied before the substrate is moved to a second height in the container. 6.

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