JP2007042691A - Substrate treatment method and substrate treatment equipment - Google Patents

Substrate treatment method and substrate treatment equipment Download PDF

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JP2007042691A
JP2007042691A JP2005222257A JP2005222257A JP2007042691A JP 2007042691 A JP2007042691 A JP 2007042691A JP 2005222257 A JP2005222257 A JP 2005222257A JP 2005222257 A JP2005222257 A JP 2005222257A JP 2007042691 A JP2007042691 A JP 2007042691A
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substrate
tank
cleaning
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treatment tank
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Hideki Shibata
英樹 柴田
Kazuaki Izutsu
一昭 井筒
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SES Co Ltd
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<P>PROBLEM TO BE SOLVED: To provide a substrate treatment method and substrate treatment equipment which can be improved in treatment performance by reducing the usage amount of a treatment liquid and can also successfully suppress corrosion and damages to a transfer robot. <P>SOLUTION: The substrate treatment method carries out a treatment on a wafer W by conducting (1) a transfer process, wherein the wafer W is transferred above a cleaning treatment bath WB by means of a transfer mechanism 3; (2) a delivery process, wherein the wafer W transferred above the cleaning treatment bath WB is delivered to a holding mechanism 4; (3) a chemical treatment process, wherein the holding mechanism 4 to which the wafer W has been delivered is moved above a chemical treatment bath CB, and then is dipped in the bath to apply a chemical treatment on the wafer W; (4) a cleaning treatment processing, wherein after the chemical treatment process is finished, the holding mechanism 4 is pulled out of the chemical treatment bath CB, and then is moved above a cleaning treatment bath WB and is dipped in it to cleanse the wafer W; and (5) a delivery process, wherein after the cleaning treatment process is finished, the holding mechanism 4 is pulled out of the cleaning treatment bath WB, and then the wafer W is delivered to the transfer mechanism 3. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は基板処理法及び基板処理装置に係り、特に半導体基板、液晶表示用ガラス基板等の各種基板(以下、総称してウェーハという)を各種処理液に浸漬して表面処理を行う際に各処理液の使用量を削減できる基板処理法及び基板処理装置に関するものである。   The present invention relates to a substrate processing method and a substrate processing apparatus, and in particular, when each surface treatment is performed by immersing various substrates (hereinafter collectively referred to as wafers) such as a semiconductor substrate and a glass substrate for liquid crystal display in various processing solutions. The present invention relates to a substrate processing method and a substrate processing apparatus that can reduce the amount of processing liquid used.

ウェーハを各種処理液に浸漬して表面処理する基板処理法は、通常、所定の薬液を貯留した薬液処理槽と、純水等を貯留した洗浄処理槽とを備えた基板処理装置を用い、これらの処理槽にウェーハを順次浸漬することによって、ウェーハ表面に付着した汚染物質、或いは不要な酸化膜、レジスト膜等を除去している(例えば、下記特許文献1、2参照)。   Substrate processing methods for surface treatment by immersing a wafer in various processing liquids usually use a substrate processing apparatus including a chemical processing tank storing a predetermined chemical liquid and a cleaning processing tank storing pure water. By sequentially immersing the wafer in the processing tank, contaminants adhering to the wafer surface, unnecessary oxide films, resist films, etc. are removed (for example, see Patent Documents 1 and 2 below).

図5は下記特許文献1に記載された基板処理装置を模式的に示す図、図6は図5のリフタヘッドに設けられた基板保持部材の移動を説明する説明図である。
この基板処理装置50は、図5に示すように、複数枚のウェーハWが収容されたカセットCからウェーハを取出す基板取出し部51と、取出されたウェーハWを搬送する搬送ロボットTRと、この搬送ロボットTRで搬送されたウェーハWを受け取り保持し各処理槽へ浸漬するリフタヘッドLHと、浸漬されたウェーハWを硫酸、フッ酸等の薬液で処理する薬液処理槽CBと、ウェーハWを純水等で洗浄する洗浄処理槽WBと、ウェーハWを乾燥する乾燥処理槽54と、処理したウェーハWを収納する基板収容部55とを備え、搬送ロボットTRは基板取出し部51と基板収容部55との間、リフタヘッドLHは薬液処理槽CBと洗浄処理槽WBとの間をそれぞれ移動できる構成となっている。
FIG. 5 is a diagram schematically showing a substrate processing apparatus described in Patent Document 1 below, and FIG. 6 is an explanatory diagram for explaining the movement of the substrate holding member provided in the lifter head of FIG.
As shown in FIG. 5, the substrate processing apparatus 50 includes a substrate take-out unit 51 that takes out wafers from a cassette C that contains a plurality of wafers W, a transfer robot TR that transfers the taken wafers W, and a transfer robot TR. Lifter head LH that receives and holds the wafer W transferred by the robot TR and immerses it in each processing tank, a chemical processing tank CB that processes the immersed wafer W with a chemical liquid such as sulfuric acid and hydrofluoric acid, and pure water or the like for the wafer W A cleaning processing tank WB for cleaning the wafer W, a drying processing tank 54 for drying the wafer W, and a substrate storage unit 55 for storing the processed wafer W. The transfer robot TR includes a substrate take-out unit 51 and a substrate storage unit 55. In the meantime, the lifter head LH can move between the chemical solution treatment tank CB and the cleaning treatment tank WB.

この装置を使用した基板処理は、以下のプロセスで行われる。カセットCに収容されたウェーハWは、一対のホルダ56a、56bを上昇させてカセットCから外に取出され、搬送ロボットTRの一対のハンド58、59に把持される。一対のハンド58、59に把持されたウェーハWは、水平方向に搬送されてリフタヘッドLHの基板保持部材60に受け渡される。
基板保持部材60に保持されたウェーハWは、先ず、薬液処理部52の薬液処理槽CBに浸漬されて薬液処理が施され、その後、水洗処理部53の処理槽WBに浸漬されて水洗処理が施される。次いで、水洗処理後のウェーハWはリフタヘッドLHの基板保持部材60側から搬送ロボットTRの一対のハンド58、59側に受け渡され、乾燥処理槽54に搬送されて乾燥処理される。最後に、乾燥後のウェーハWは、搬送ロボットTRの一対のハンド58、59に受け渡された後に、基板収容部55の一対のホルダ57a、57bに受け渡されカセットC中に収納される。
Substrate processing using this apparatus is performed by the following process. The wafer W accommodated in the cassette C is lifted by the pair of holders 56a and 56b and taken out of the cassette C, and is held by the pair of hands 58 and 59 of the transfer robot TR. The wafer W held by the pair of hands 58 and 59 is transferred in the horizontal direction and transferred to the substrate holding member 60 of the lifter head LH.
The wafer W held on the substrate holding member 60 is first immersed in the chemical processing tank CB of the chemical processing unit 52 and subjected to chemical processing, and then immersed in the processing tank WB of the water cleaning processing unit 53 to be washed with water. Applied. Next, the water-washed wafer W is transferred from the substrate holding member 60 side of the lifter head LH to the pair of hands 58 and 59 side of the transfer robot TR, transferred to the drying processing tank 54, and dried. Finally, the dried wafer W is transferred to the pair of hands 58 and 59 of the transfer robot TR, and then transferred to the pair of holders 57a and 57b of the substrate storage unit 55 and stored in the cassette C.

この処理プロセスにおけるリフタヘッドLHの移動を説明すると、搬送ロボットTRの一対のハンド58、59に支持されたウェーハWは、先ず薬液処理槽CB上方の第1待機位置にあるリフタヘッドLHの基板保持部材60に移載される(図6(a)参照)。次いで、リフタヘッドLHは、第1待機位置から薬液処理槽CB中の第1浸漬位置に降下してウェーハの薬液処理が行われ(図6(b)参照)、その後、第1浸漬位置から薬液処理槽CB上方の第1退避位置に上昇する(図6(c)参照)。続いて、リフタヘッドLHは、薬液処理槽CB上方の第1退避位置から洗浄処理槽WB上方の第2退避位置へ横移動し(図6(d)参照)、この第2待機位置から洗浄処理槽WB中の第2浸漬位置に降下して水洗処理がなされる(図6(e)参照)。その後は、この第2浸漬位置から洗浄処理槽WB上方の第2退避位置に上昇し、ウェーハWが搬送ロボットTRの一対のハンド58、59に移載される(図6(f)参照)。
本先行技術の基板処理装置50を使用した処理法によると、搬送ロボットの一対のハンドが直接薬液に触れることがなくなるので、ハンドを洗浄する洗浄装置が不要となるとともに、一対のハンドによって薬液及び洗浄処理槽へのウェーハWの浸漬を行わず、リフタヘッドLHを用いることで、各処理槽の容積を小さくすることができる。
Explaining the movement of the lifter head LH in this processing process, the wafer W supported by the pair of hands 58 and 59 of the transfer robot TR is first the substrate holding member 60 of the lifter head LH in the first standby position above the chemical solution processing tank CB. (See FIG. 6A). Next, the lifter head LH descends from the first standby position to the first immersion position in the chemical treatment tank CB to perform the chemical treatment of the wafer (see FIG. 6B), and then the chemical treatment from the first immersion position. It rises to the first retracted position above the tank CB (see FIG. 6C). Subsequently, the lifter head LH moves laterally from the first retracted position above the chemical solution processing tank CB to the second retracted position above the cleaning process tank WB (see FIG. 6D), and the cleaning process tank from this second standby position. It falls to the 2nd immersion position in WB, and a water washing process is made | formed (refer FIG.6 (e)). After that, the wafer W moves up from the second immersion position to the second retreat position above the cleaning tank WB, and the wafer W is transferred to the pair of hands 58 and 59 of the transfer robot TR (see FIG. 6F).
According to the processing method using the substrate processing apparatus 50 of the prior art, since the pair of hands of the transfer robot do not directly touch the chemical solution, a cleaning device for cleaning the hands becomes unnecessary, and the chemical solution and The volume of each processing tank can be reduced by using the lifter head LH without immersing the wafer W in the cleaning processing tank.

図7は下記特許文献2に記載された他の基板処理装置を示す概略構成図である。
このウェーハ洗浄槽70は、2つの第1、第2純水水洗槽71、73と、薬液洗浄槽72と、乾燥槽74とを備え、ウェーハWはこれらの槽に順に搬送、浸漬されて水洗或いは薬液処理がなされるようになっている。すなわち、この装置によるウェーハの処理は、先ず、ウェーハを第1純水処理槽71で洗浄処理される。次いで、純水洗浄されたウェーハは、薬液洗浄槽72に浸漬されて薬液処理され、その後、第2純水処理槽73へ移動・浸漬されて洗浄処理され、最後に乾燥槽74にて乾燥される。
FIG. 7 is a schematic configuration diagram showing another substrate processing apparatus described in Patent Document 2 below.
The wafer cleaning tank 70 includes two first and second pure water washing tanks 71 and 73, a chemical solution washing tank 72, and a drying tank 74, and the wafer W is sequentially transported and immersed in these tanks and washed with water. Or a chemical | medical solution process is made | formed. That is, in the processing of the wafer by this apparatus, first, the wafer is cleaned in the first pure water processing tank 71. Next, the wafer subjected to pure water cleaning is immersed in the chemical cleaning tank 72 and subjected to chemical processing, then moved to the second pure water processing tank 73, cleaned, and finally dried in the drying tank 74. The

特許第3559099号公報(図5、図6、段落〔0024〕〜〔0026〕)Japanese Patent No. 3559099 (FIGS. 5 and 6, paragraphs [0024] to [0026]) 特開2002−359219号公報(図1、段落〔0012〕〜〔0014〕)JP 2002-359219 A (FIG. 1, paragraphs [0012] to [0014])

ところで、近年は環境面への配慮から、基板処理装置においてもより高い環境性能を備えたものが要求され、従来は搬送ロボットによりウェーハの搬送及び処理槽への浸漬が行われていたが、この場合ウェーハとともに搬送ロボットのアームごと処理槽内に浸漬する必要があったためにアーム自体の幅及びアームの逃げ幅の分だけ処理槽を大きくする必要があった。   By the way, in recent years, due to environmental considerations, a substrate processing apparatus that has higher environmental performance is required. Conventionally, a wafer is transferred by a transfer robot and immersed in a processing tank. In this case, since the entire arm of the transfer robot must be immersed in the processing tank together with the wafer, it is necessary to enlarge the processing tank by the width of the arm itself and the clearance width of the arm.

そこで、上記特許文献1の基板処理装置のように、ウェーハを、その下端部のみを挟持して各処理槽に浸漬するリフタヘッドを用いたものがある。これによれば、処理槽の幅をウェーハよりも若干大きくするのみですむので、処理槽自体を小さくでき、以って処理槽内に貯留される薬液あるいは洗浄液等の各種処理液の容量を削減することができる。   Therefore, as in the above-described substrate processing apparatus of Patent Document 1, there is one using a lifter head that immerses a wafer in each processing tank while sandwiching only the lower end portion thereof. According to this, since the width of the processing tank only needs to be slightly larger than that of the wafer, the processing tank itself can be made smaller, thereby reducing the volume of various processing liquids such as chemicals or cleaning liquids stored in the processing tank. can do.

しかしながら、上記特許文献1においては、リフタヘッドにウェーハを搬送する搬送ロボットがその搬送過程において薬液処理槽上に配置されることがある。このとき、薬液処理槽内に貯留された薬液として酸性の硫酸、塩酸あるいはフッ酸等が用いられている場合、薬液処理槽から薬液が揮発することでこの槽の上方が薬液雰囲気となる場合があることから、搬送ロボットがこの薬液に晒され、腐食・損傷を起こす場合があった。   However, in Patent Document 1, a transfer robot that transfers a wafer to a lifter head may be disposed on a chemical treatment tank during the transfer process. At this time, when acidic sulfuric acid, hydrochloric acid, hydrofluoric acid, or the like is used as the chemical solution stored in the chemical treatment tank, the chemical solution volatilizes from the chemical treatment tank, and the chemical solution atmosphere may be formed above the tank. As a result, the transfer robot was exposed to this chemical, which could cause corrosion and damage.

また、ウェーハは、通常、その表面を研磨する研磨工程、この研磨の後にダイシングするスクライビング工程等の各種の工程を経て製造されている。これらの工程を終了したウェーハには、ダスト、金属片及び有機物などの異物が付着しているので、このような異物が付着したウェーハを直ぐ薬液処理槽内の薬液に浸漬すると、このような異物が薬液に混入してしまい、この混入量は、ウェーハの枚数及び処理回数が多くなればそれに比例して増大することになる。   In addition, the wafer is usually manufactured through various processes such as a polishing process for polishing the surface and a scribing process for dicing after the polishing. Since foreign substances such as dust, metal pieces, and organic matter are attached to the wafer after these steps, if the wafer with such foreign substances attached is immediately immersed in the chemical solution in the chemical treatment tank, such foreign matter The amount of contamination increases in proportion to the number of wafers and the number of processings.

その結果、薬液処理槽中の異物の量が増加し、ウェーハに再付着してしまう危険性が高くなる。また、薬液処理槽には、通常、フィルタが付設されているが、洗浄回数が多くなると、目詰まりが発生し、フィルタの交換頻度が多くなり、この交換のために装置の運転を停止しなければならず、そのため処理能率が格段に低下することになる。   As a result, the amount of foreign matter in the chemical treatment tank increases and the risk of reattachment to the wafer increases. In addition, a filter is usually attached to the chemical treatment tank, but if the number of washings increases, clogging occurs, the frequency of filter replacement increases, and the operation of the apparatus must be stopped for this replacement. As a result, the processing efficiency is greatly reduced.

この問題を解決するために上記特許文献2に記載された基板処理装置を使用すると、ウェーハは薬液処理槽へ浸漬される前に第1純水水洗槽で洗浄されるので、ウェーハに付着した異物が予め除去され、薬液への異物の混入量が少なくなる。しかし、この基板処理装置は第1純水水洗槽が別途必要となるので、処理槽の追加及びこの処理槽の追加に伴う搬送機構等の付属機構も必須となり、装置が大型化し高価となる。また、2つの洗浄水洗槽を使用するので、使用する純水量も多くなり、結果として、ウェーハの処理費用が高くなる。   In order to solve this problem, when the substrate processing apparatus described in Patent Document 2 is used, the wafer is cleaned in the first pure water rinsing tank before being immersed in the chemical processing tank. Is removed in advance, and the amount of foreign matter mixed into the chemical solution is reduced. However, since this substrate processing apparatus requires a first pure water rinsing tank separately, an additional processing tank and an accompanying mechanism such as a transport mechanism accompanying the addition of this processing tank are essential, and the apparatus becomes large and expensive. Further, since two cleaning water rinsing tanks are used, the amount of pure water to be used is increased, resulting in an increase in wafer processing costs.

本発明者らは、上記問題点に鑑み、搬送ロボットの薬液による腐食・損傷を防止する方法を種々検討した結果、搬送ロボットの停止位置、すなわちウェーハのリフタヘッドへの受渡し位置を、その処理工程に関わらず洗浄処理槽上とし、薬液雰囲気に晒されないようにすれば、上記問題点を解決できることを見出し、更にこのように洗浄処理槽上でウェーハの受渡しを行うことで、薬液処理槽内に浸漬させる前に基板を洗浄したい場合においては、薬液処理槽による処理の前後に行う洗浄処理を1つの洗浄処理槽で兼用することが容易に可能であることを見出し、本発明に至ったものである。   In view of the above problems, the present inventors have studied various methods for preventing corrosion / damage caused by the chemical solution of the transfer robot, and as a result, the stop position of the transfer robot, that is, the transfer position of the wafer to the lifter head is used as the processing step. Regardless of whether it is placed on the cleaning tank and not exposed to the chemical atmosphere, the above problems can be solved, and the wafer is transferred to the cleaning tank as described above, so that it is immersed in the chemical tank. In the case where it is desired to clean the substrate before it is performed, the present inventors have found that it is possible to easily perform a cleaning process performed before and after the process in the chemical processing tank in one cleaning process tank, and the present invention has been achieved. .

すなわち、本発明の目的は、処理液の使用量を少なくして処理能力をアップでき、かつ搬送ロボットの腐食・損傷を良好に抑制できる基板処理法及び基板処理装置を提供することである。   That is, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can increase the processing capacity by reducing the amount of processing liquid used, and can satisfactorily suppress the corrosion and damage of the transfer robot.

また、本発明の他の目的は、薬液処理槽による処理の前段階で行う洗浄工程のための洗浄処理槽を別途設ける必要のない基板処理法及び基板処理装置を提供することである。   Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus that do not require a separate cleaning processing tank for a cleaning process performed in a stage prior to the processing by the chemical processing tank.

上記目的を達成するために、請求項1に記載の基板処理法は、内部に所定の薬液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの薬液処理槽と、前記薬液処理槽に隣接する位置に配設され、内部に所定の洗浄液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの洗浄処理槽と、前記被処理基板を保持し前記薬液処理槽及び洗浄処理槽内に浸漬し、かつ1つの前記薬液処理槽と1つの洗浄処理槽との間を往復可能な保持機構と、前記被処理基板を搬送する搬送機構と、を備え、以下の(1)〜(5)の各工程により被処理基板を処理することを特徴とする。
(1)前記搬送機構により被処理基板を前記洗浄処理槽上へ搬送する搬送工程、
(2)前記洗浄処理槽上に搬送された被処理基板を前記保持機構へ受け渡す受渡し工程、
(3)前記被処理基板を受け渡された保持機構を前記薬液処理槽上へ移動させて浸漬し被処理基板を薬液処理する薬液処理工程、
(4)前記薬液処理工程の終了後に、前記保持機構を前記薬液処理槽から引き上げて前記洗浄処理槽上へ移動し、前記洗浄処理槽内に浸漬し被処理基板を洗浄する洗浄処理工程、
(5)前記洗浄処理工程の終了後に、前記保持機構を前記洗浄処理槽から引き上げ、被処理基板を前記搬送機構に受け渡す受渡し工程。
In order to achieve the above object, the substrate processing method according to claim 1 is characterized in that a predetermined chemical solution is stored therein and at least one chemical treatment tank is provided for processing by immersing the substrate to be processed therein, and the chemical treatment. At least one cleaning processing tank disposed in a position adjacent to the tank, storing a predetermined cleaning liquid therein and immersing the substrate to be processed therein, and holding the substrate to be processed; A holding mechanism that is immersed in the cleaning treatment tank and can reciprocate between one chemical treatment tank and one cleaning treatment tank; and a transport mechanism that transports the substrate to be processed. ) To (5) to process the substrate to be processed.
(1) A transfer step of transferring the substrate to be processed onto the cleaning treatment tank by the transfer mechanism,
(2) a delivery step of delivering the substrate to be processed conveyed on the cleaning treatment tank to the holding mechanism;
(3) A chemical treatment process for treating the substrate to be treated by immersion by moving the holding mechanism that has passed the substrate to be treated onto the chemical treatment tank.
(4) After completion of the chemical treatment process, the holding mechanism is lifted from the chemical treatment tank, moved onto the cleaning treatment tank, and immersed in the cleaning treatment tank to wash the substrate to be treated;
(5) A delivery step of lifting the holding mechanism from the cleaning treatment tank and delivering the substrate to be processed to the transport mechanism after completion of the cleaning treatment step.

また、請求項2に記載の発明は、請求項1に記載の基板処理法において、前記搬送機構は、前記(2)〜(5)の各工程が行われている間は前記薬液処理槽上以外に位置していることを特徴とする。   Further, the invention according to claim 2 is the substrate processing method according to claim 1, wherein the transport mechanism is on the chemical treatment tank while the steps (2) to (5) are performed. It is located in other than.

また、請求項3に記載の発明は、請求項1又は2に記載の基板処理法において、前記薬液処理槽及び洗浄処理槽は、複数個隣接して配設されており、それぞれの前記薬液処理槽及び洗浄処理槽ごとに前記(1)〜(5)の工程を繰り返すことを特徴とする。   Further, the invention according to claim 3 is the substrate processing method according to claim 1 or 2, wherein the chemical treatment tank and the cleaning treatment tank are arranged adjacent to each other, and each of the chemical treatments is arranged. The steps (1) to (5) are repeated for each tank and cleaning treatment tank.

また、請求項4に記載の発明は、請求項1〜3のいずれかに記載の基板処理法において、前記(2)の工程の終了後で、前記(3)の薬液処理工程を行う前に、
(2')前記保持機構を前記洗浄処理槽内に浸漬し被処理基板を洗浄処理する洗浄処理工程、
を行うことを特徴とする。
Further, the invention according to claim 4 is the substrate processing method according to any one of claims 1 to 3, wherein after the step (2) is completed and before the chemical solution processing step (3) is performed. ,
(2 ′) A cleaning process step of cleaning the substrate to be processed by immersing the holding mechanism in the cleaning tank.
It is characterized by performing.

また、請求項5に記載の発明は、請求項4に記載の基板処理法において、前記(2')の工程の終了後、前記(4)の工程に移行するまでに、前記洗浄処理槽内に貯留された洗浄液は入れ替えられることを特徴とする。   Further, the invention according to claim 5 is the substrate processing method according to claim 4, wherein after the step (2 ′) is completed, the process proceeds to the step (4). The cleaning liquid stored in is replaced.

また、請求項6に記載の発明は、請求項1に記載の基板処理法において、前記薬液処理槽は、上部開口を覆う蓋体及び前記蓋体を開閉させる開閉機構を備え、前記蓋体は、前記被処理基板を前記薬液処理槽に浸漬するとき、及び、前記被処理基板を前記薬液処理槽内から引き上げるときにのみ開放されるように制御することを特徴とする。   Further, the invention according to claim 6 is the substrate processing method according to claim 1, wherein the chemical treatment tank includes a lid that covers an upper opening and an opening / closing mechanism that opens and closes the lid. The substrate is controlled to be opened only when the substrate to be processed is immersed in the chemical treatment tank and when the substrate to be treated is pulled out from the chemical treatment bath.

また、請求項7に記載の発明は、請求項1〜6のいずれかに記載の基板処理法において、最後の前記(5)工程の終了後に、乾燥処理機構により被処理基板を乾燥することを特徴とする。   The invention described in claim 7 is the substrate processing method according to any one of claims 1 to 6, wherein after the last step (5), the substrate to be processed is dried by the drying processing mechanism. Features.

請求項8に記載の基板処理装置の発明は、内部に所定の薬液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの薬液処理槽と、前記薬液処理槽に隣接する位置に配設され、内部に所定の洗浄液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの洗浄処理槽と、前記被処理基板を保持し前記薬液処理槽及び洗浄処理槽内に浸漬し、かつ1つの前記薬液処理槽と1つの洗浄処理槽との間を往復可能な保持機構と、前記被処理基板を搬送する搬送機構と、を備え、前記請求項1〜6のいずれかに記載の基板処理法を行うことを特徴とする。   The substrate processing apparatus according to claim 8 stores at least one chemical processing tank for storing a predetermined chemical solution inside and immersing the substrate to be processed therein, and a position adjacent to the chemical processing tank. At least one cleaning treatment tank which is disposed and stores a predetermined cleaning liquid therein and immerses the substrate to be processed in the inside; and holds the substrate to be processed and is immersed in the chemical treatment tank and the cleaning treatment tank And a holding mechanism capable of reciprocating between one of the chemical solution processing tank and one of the cleaning processing tanks, and a transfer mechanism for transferring the substrate to be processed. The described substrate processing method is performed.

また、請求項9に記載の発明は、請求項8に記載の基板処理装置において、前記被処理基板を乾燥させる乾燥処理槽を更に備え、前記一連の基板処理が完了した後、前記乾燥処理槽により前記被処理基板を乾燥させることを特徴とする。   Further, the invention according to claim 9 is the substrate processing apparatus according to claim 8, further comprising a drying processing tank for drying the substrate to be processed, and after the series of substrate processing is completed, the drying processing tank And drying the substrate to be processed.

また、請求項10に記載の発明は、請求項8又は9に記載の基板処理装置において、前記基板処理装置は、さらに前記基板処理装置内にクリーンエア等を供給する給気機構と、前記基板処理槽内の蒸気を含む気体を排気する排気機構とを備えることを特徴とする。   The invention described in claim 10 is the substrate processing apparatus according to claim 8 or 9, wherein the substrate processing apparatus further supplies an air supply mechanism for supplying clean air or the like into the substrate processing apparatus, and the substrate. And an exhaust mechanism for exhausting a gas containing steam in the treatment tank.

本発明は上記構成を備えることにより以下に示すような優れた効果を奏する。すなわち、請求項1、2の発明によれば、被処理基板の搬送機構から保持機構への受渡しを洗浄処理槽上で行うことにより、この受渡し時に薬液処理槽から揮発した薬液蒸気に搬送機構が晒されることがなく、特別な搬送機構の洗浄装置を設けなくとも搬送機構が薬液蒸気により腐食・破損することを抑制することができるようになる。加えて、(2)〜(5)の各工程中も薬液処理槽上に搬送機構が位置しないため、この間も搬送機構が薬液雰囲気に晒されることがない。また、薬液が付着した被処理基板を把持しないため、薬液そのものが搬送機構に付着しないことはもちろんである。   By providing the above-described configuration, the present invention has the following excellent effects. That is, according to the first and second aspects of the present invention, the transfer mechanism is transferred from the transfer mechanism of the substrate to be processed to the holding mechanism on the cleaning processing tank, so that the transfer mechanism is transferred to the chemical vapor vaporized from the chemical processing tank during the transfer. Without being exposed, it is possible to prevent the transport mechanism from being corroded or damaged by chemical vapor without providing a special transport mechanism cleaning device. In addition, since the transport mechanism is not located on the chemical treatment tank during the steps (2) to (5), the transport mechanism is not exposed to the chemical atmosphere during this time. Further, since the substrate to be processed to which the chemical solution is attached is not gripped, the chemical solution itself does not adhere to the transport mechanism.

また、請求項3の発明によれば、薬液処理槽及び洗浄処理槽を複数個設けた場合においても、上記請求項1及び2の発明の効果を達成することができるようになる。   According to the invention of claim 3, even when a plurality of chemical treatment tanks and cleaning treatment tanks are provided, the effects of the inventions of claims 1 and 2 can be achieved.

また、請求項4の発明によれば、薬液処理を行う前に洗浄処理槽によって被処理基板の洗浄を行えるため、この処理を行うために別途洗浄処理槽を設ける必要がなく、使用する処理液を削減できるとともに、装置自体の小型化を達成できる。そして、これにより、被処理基板上に付着したゴミ等を薬液処理を行う前にある程度落とすことができるために薬液が汚れ難くなり、また、この洗浄工程によって、被処理基板は、その表面が濡れた状態で薬液処理槽内に浸漬される、すなわち、被処理基板の濡れ性が向上された状態で薬液処理槽内に浸漬されるので、薬液による処理がより良好に行われるようになる。   Further, according to the invention of claim 4, since the substrate to be processed can be cleaned by the cleaning processing tank before the chemical processing, it is not necessary to provide a separate cleaning processing tank to perform this processing, and the processing liquid to be used Can be reduced, and the size of the device itself can be reduced. This makes it possible to remove dirt adhering to the substrate to be processed to some extent before performing the chemical treatment, so that the chemical solution is difficult to get dirty, and the surface of the substrate to be processed becomes wet by this cleaning process. In such a state, the substrate is immersed in the chemical solution processing tank, that is, in the state where the wettability of the substrate to be processed is improved, so that the treatment with the chemical solution is performed better.

また、請求項5の発明によれば、洗浄処理槽内の洗浄液が、(2')工程と(4)工程との間で入れ替えられるので、(2')工程で洗浄された不純物が(4)工程で再度被処理基板に付着する恐れがない。   According to the invention of claim 5, since the cleaning liquid in the cleaning treatment tank is replaced between the step (2 ′) and the step (4), the impurities cleaned in the step (2 ′) are (4 ) There is no fear of adhering to the substrate again in the process.

また、請求項6の発明によれば、薬液処理槽に蓋体を設けたことにより、薬液が外部に揮発して発散することを抑えることができるので、搬送機構等の腐食・破損をより良好に抑えることができる。   Further, according to the invention of claim 6, since the chemical liquid treatment tank is provided with the lid, it is possible to prevent the chemical liquid from volatilizing to the outside and diverge, so that the conveyance mechanism and the like are more easily corroded and broken. Can be suppressed.

また、請求項7の発明によれば、乾燥処理機構を設けたことにより、被処理基板の乾燥を一連の工程で行えるようになる。   According to the invention of claim 7, by providing the drying processing mechanism, the substrate to be processed can be dried in a series of steps.

請求項8の発明によれば、上記請求項1〜6の各効果を実現できる基板処理装置を提供できる。   According to invention of Claim 8, the substrate processing apparatus which can implement | achieve each effect of the said Claims 1-6 can be provided.

また、請求項9の発明によれば、搬送処理槽を設けたことにより、被処理基板の乾燥を一連の工程で行える基板処理装置を提供できる。   According to the ninth aspect of the present invention, it is possible to provide a substrate processing apparatus capable of drying a substrate to be processed in a series of steps by providing a transfer processing tank.

また、請求項10の発明によれば、基板処理装置が給気機構及び排気機構を備えることにより、基板処理装置内の空気が随時入れ替えられることとなり、薬液処理槽から揮発した薬液蒸気も排気されるので、基板処理装置自体が薬液雰囲気になることを防止できる。   According to the invention of claim 10, since the substrate processing apparatus includes the air supply mechanism and the exhaust mechanism, the air in the substrate processing apparatus is replaced as needed, and the chemical vapor vaporized from the chemical processing tank is also exhausted. Therefore, the substrate processing apparatus itself can be prevented from entering a chemical atmosphere.

以下、図面を参照して本発明の最良の実施形態を説明する。但し、以下に示す実施形態は、本発明の技術思想を具体化するための基板処理法及び基板処理装置を例示するものであって、本発明をこの基板処理法及び基板処理装置に特定することを意図するものではなく、特許請求の範囲に含まれるその他の実施形態のものも等しく適応し得るものである。   Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a substrate processing method and a substrate processing apparatus for embodying the technical idea of the present invention, and the present invention is specified to the substrate processing method and the substrate processing apparatus. And other embodiments within the scope of the claims are equally applicable.

図1は本発明の実施例1の基板処理装置を模式的に示す概略図、図2は図1の基板処理装置の一部縦断面図、図3は図1の基板処理装置におけるウェーハの一連の移動過程を示す図である。なお、図2に示す断面図は洗浄処理槽WBが設けられた位置で切断した状態を示すものである。   1 is a schematic view schematically showing a substrate processing apparatus according to a first embodiment of the present invention, FIG. 2 is a partial longitudinal sectional view of the substrate processing apparatus of FIG. 1, and FIG. 3 is a series of wafers in the substrate processing apparatus of FIG. It is a figure which shows the movement process of. The cross-sectional view shown in FIG. 2 shows a state cut at a position where the cleaning tank WB is provided.

基板処理装置1は、図1に示すように、複数枚のウェーハWが収容されたカセットCからウェーハWを取出す基板取出し部2と、取出されたウェーハWを所定の場所へ搬送する搬送機構3と、この搬送機構3で搬送されたウェーハWを受け取り保持する保持機構4と、この保持機構4に保持されたウェーハWを純水等で洗浄する洗浄処理槽WBと、各種薬液で薬液処理する薬液処理槽CBと、処理されたウェーハを最終洗浄する最終洗浄処理槽FRと、洗浄されたウェーハを乾燥処理する乾燥処理槽DRYと、乾燥処理されたウェーハを収納する基板収容部5を備え、搬送機構3は、基板取出し部2から基板収容部5間の距離L1を移動でき、また、保持機構4は、洗浄処理槽WBと薬液処理槽CB間の距離L2を移動できるようになっている。   As shown in FIG. 1, the substrate processing apparatus 1 includes a substrate take-out unit 2 that takes out a wafer W from a cassette C in which a plurality of wafers W are accommodated, and a transfer mechanism 3 that transfers the taken-out wafer W to a predetermined place. A holding mechanism 4 that receives and holds the wafer W transferred by the transfer mechanism 3, a cleaning treatment tank WB that cleans the wafer W held by the holding mechanism 4 with pure water, and the like, and performs chemical processing with various chemical solutions. A chemical treatment tank CB, a final cleaning tank FR for final cleaning of the processed wafer, a drying tank DRY for drying the cleaned wafer, and a substrate container 5 for storing the dried wafer, The transport mechanism 3 can move the distance L1 between the substrate take-out part 2 and the substrate storage part 5, and the holding mechanism 4 can move the distance L2 between the cleaning treatment tank WB and the chemical treatment tank CB. .

基板取出し部2内には、図2に示すように、ウェーハWを移送する移送機2Aが配設され、この移送機2A、搬送機構3、保持機構4及び各処理槽(WB、CB、FR、DRY)等は、箱型ハウジング7の中に収容されている。この箱型ハウジング7は、所定の高さを有し、その天井部に送風機構8及びフィルタ11が配設され、また、一側壁面に排出ダクト9が連結されていることにより給気機構及び排気機構を構成している。すなわち、フィルタ11からは、クリーンエアが箱型ハウジング7内へ供給され、この薬液蒸気を含むガスが排出ダクト9から排出されるようになっている。   As shown in FIG. 2, a transfer machine 2 </ b> A for transferring the wafer W is disposed in the substrate take-out unit 2, and the transfer machine 2 </ b> A, the transfer mechanism 3, the holding mechanism 4, and each processing tank (WB, CB, FR). , DRY) and the like are accommodated in the box-shaped housing 7. The box-shaped housing 7 has a predetermined height, a blower mechanism 8 and a filter 11 are disposed on a ceiling portion thereof, and a discharge duct 9 is connected to one side wall surface. An exhaust mechanism is configured. That is, clean air is supplied from the filter 11 into the box-shaped housing 7, and the gas containing the chemical vapor is discharged from the discharge duct 9.

搬送機構3は、ウェーハWを把持する把持部材31を有する搬送ロボット30で構成されている。この搬送ロボット30は、垂直に立設された支柱32と、この支柱32から水平に延びたアーム33の先端に設けられた把持部材31とを有し、支柱32は、昇降・移動機構34により上下動及び水平方向(図2の前後方向)へ移動できるようになっている。また、把持部材31は、一対のハンド部材31a、31b(図3参照)を有し、これらのハンド部材31a、31bでウェーハWを把持できるようになっている。   The transfer mechanism 3 includes a transfer robot 30 having a holding member 31 that holds the wafer W. The transfer robot 30 includes a vertically extending support 32 and a gripping member 31 provided at the tip of an arm 33 extending horizontally from the support 32. The support 32 is moved by an elevating / moving mechanism 34. It can move up and down and move in the horizontal direction (front-rear direction in FIG. 2). The holding member 31 includes a pair of hand members 31a and 31b (see FIG. 3), and the wafer W can be held by these hand members 31a and 31b.

また、保持機構4は、搬送機構3から受け取ったウェーハWを保持して各処理槽内へ挿入する保持部材40を有し、昇降・移動機構42により上下動及び水平方向(図2の前後方向)へ移動できるようになっている。これらの搬送ロボット30、保持部材40及び昇降・移動機構34、42は、何れもマイクロコンピュータを搭載した制御手段(図示省略)で制御されるようになっている。なお、これらの機構及び制御手段は、公知のものを使用するので、詳細な説明を省略する。   The holding mechanism 4 has a holding member 40 that holds the wafer W received from the transfer mechanism 3 and inserts it into each processing tank. The holding mechanism 40 moves up and down and moves horizontally (the front-rear direction in FIG. ) Can be moved to. The transfer robot 30, the holding member 40, and the elevating / moving mechanisms 34 and 42 are all controlled by control means (not shown) equipped with a microcomputer. In addition, since these mechanisms and control means use a well-known thing, detailed description is abbreviate | omitted.

薬液処理槽CBは、複数枚のウェーハWを保持した保持部材40を収容できる大きさを有する有底の箱型容器で形成されている。この容器は、上方に保持部材40等を挿入する開口部を有し、この開口部は、蓋体12により覆うことができるようになっている。この蓋体12は、薬液処理槽CBの対向する側端部にヒンジ機構により取り付けられて、観音開きで開閉する。なお、この開閉制御においても前記制御手段により行われる。
また、この薬液処理槽CBは、薬液供給源(図示省略)に接続され、この供給源から、各種の薬液、例えば硫酸、アンモニア、塩酸、フッ酸等が供給されるようになっている。加えて、この薬液処理槽CBは薬液を外部へ排出処理する薬液処理設備(図示省略)にも接続されている。
The chemical treatment tank CB is formed of a bottomed box-shaped container having a size capable of accommodating the holding member 40 holding a plurality of wafers W. This container has an opening for inserting the holding member 40 and the like above, and this opening can be covered with the lid 12. The lid body 12 is attached to the opposite side end portions of the chemical solution treatment tank CB by a hinge mechanism, and opens and closes with a double door. The opening / closing control is also performed by the control means.
The chemical treatment tank CB is connected to a chemical supply source (not shown), and various chemical solutions such as sulfuric acid, ammonia, hydrochloric acid, hydrofluoric acid and the like are supplied from the supply source. In addition, the chemical treatment tank CB is also connected to a chemical treatment facility (not shown) that discharges the chemical to the outside.

洗浄処理槽WB及び最終洗浄処理槽FRは、薬液処理槽CBとほぼ同じ大きさを有しており、純水等を供給する洗浄液供給源及び排水設備(図示省略)にそれぞれ接続されている。この洗浄処理槽WBとしては、洗浄液を連続供給するオーバーフロー槽が好ましい。   The cleaning processing tank WB and the final cleaning processing tank FR have substantially the same size as the chemical processing tank CB, and are connected to a cleaning liquid supply source for supplying pure water and the like and a drainage facility (not shown), respectively. As the cleaning treatment tank WB, an overflow tank for continuously supplying a cleaning liquid is preferable.

以下に、この基板処理装置1を使用したウェーハWの基板処理工程を図3を参照して説明する。
先ず、基板処理装置1の運転時には、薬液処理槽CBの開口は蓋体12によって閉じられている。この状態において、基板取出し部2には、複数枚のウェーハWがカセットCに収容されて搬入される。次いで、搬入されたカセットCから、搬送機構3へのウェーハWの受渡しが行われる。搬送機構3へ受け渡されたウェーハWは、先ず、洗浄処理槽WBへ搬送されて(図3の「I」参照)、ここで保持機構4の保持部材40へ受け渡される(図3の「II」参照)。
Below, the substrate processing process of the wafer W using this substrate processing apparatus 1 is demonstrated with reference to FIG.
First, when the substrate processing apparatus 1 is in operation, the opening of the chemical solution processing tank CB is closed by the lid 12. In this state, a plurality of wafers W are accommodated in the cassette C and loaded into the substrate take-out unit 2. Next, the wafer W is transferred from the loaded cassette C to the transfer mechanism 3. The wafer W transferred to the transfer mechanism 3 is first transferred to the cleaning treatment tank WB (see “I” in FIG. 3), and then transferred to the holding member 40 of the holding mechanism 4 (“ II ”).

保持部材40は、昇降・移動機構42によりウェーハWを保持したまま洗浄処理槽WB内の純水に浸漬されウェーハの洗浄が行なわれる(図3の「III」参照)。この洗浄は、洗浄処理槽WBに洗浄液供給源から純水が供給され続けることによって行われる。なお、洗浄処理槽WBから溢れた純水は、排水設備を通して外部へ排出される。このとき、搬送ロボット30は一時的に退避させておく(図3の「IV」参照)ものとする。これは、保持機構4の移動の障害とならないようにするとともに、薬液処理槽CBから離れた位置に退避させるためであって、保持機構4の移動の障害とならない場合には必ずしも移動させる必要はない。   The holding member 40 is immersed in pure water in the cleaning tank WB while the wafer W is held by the elevating / moving mechanism 42 to clean the wafer (see “III” in FIG. 3). This cleaning is performed by continuing to supply pure water from the cleaning liquid supply source to the cleaning treatment tank WB. The pure water overflowing from the cleaning treatment tank WB is discharged to the outside through the drainage facility. At this time, the transfer robot 30 is temporarily retracted (see “IV” in FIG. 3). This is to prevent the movement of the holding mechanism 4 and to retreat to a position away from the chemical treatment tank CB. If the movement of the holding mechanism 4 does not become an obstacle, the movement is not necessarily required. Absent.

ウェーハWの洗浄が完了すると、昇降・移動機構42を作動させて洗浄処理槽WBから保持部材40を引上げ、隣接する薬液処理槽CBに移動させ、保持部材40ごとこの薬液処理槽CBへ浸漬し薬液処理を行う(図3の「V」参照)。このとき保持部材40は垂直上昇し、水平移動し、垂直下降するが、移動方向が変わる位置において円弧を描くようにすることで、移動速さを変更することなく移動方向を転ずるようにすることができる。この薬液処理槽CBには、予め、所定の薬液、例えばフッ酸が貯留されている。また、蓋体12は保持部材40が薬液処理槽CB上に位置した際に開かれるが、薬液処理槽CB内にウェーハWが保持されたならばこの蓋体12は閉じる。このとき、前記洗浄工程においてウェーハWは既にその表面が濡れた状態となっており、ウェーハWの濡れ性が向上しているので、薬液処理をより良好に行うことができる。   When the cleaning of the wafer W is completed, the lifting / moving mechanism 42 is operated to pull up the holding member 40 from the cleaning treatment tank WB, move it to the adjacent chemical treatment tank CB, and immerse the holding member 40 together with this chemical treatment tank CB. A chemical treatment is performed (see “V” in FIG. 3). At this time, the holding member 40 rises vertically, moves horizontally, and descends vertically. However, the moving direction is changed without changing the moving speed by drawing an arc at a position where the moving direction changes. Can do. A predetermined chemical solution, for example, hydrofluoric acid is stored in advance in the chemical solution treatment tank CB. The lid 12 is opened when the holding member 40 is positioned on the chemical solution treatment tank CB. If the wafer W is held in the chemical solution treatment tank CB, the lid 12 is closed. At this time, since the surface of the wafer W is already wet in the cleaning step and the wettability of the wafer W is improved, the chemical treatment can be performed more favorably.

そして、ウェーハWの薬液処理が完了すると、蓋体12を開き昇降・移動機構42を作動させて薬液処理槽CBから保持部材40を引上げ、隣接する洗浄処理槽WBへ再び移動させ、この洗浄処理槽WBへ浸漬し洗浄処理を行う(図3の「VI」参照)。このときも保持部材40を移動方向を転ずる位置にて円弧状に移動させると好ましい。このウェーハ洗浄は、洗浄処理槽WBの洗浄液をオーバーフローさせて行う、或いは先の洗浄液を入れ替えて新しい洗浄液で行う。洗浄液の入れ替えを行うことにより、先の洗浄で取り除いた汚染物が再びウェーハWに付着することを防ぐことができる。また、保持部材40が薬液処理槽CBから引き上げられた際には、速やかに蓋体12を閉じ、外部への薬液の発散を阻止する。なお、この洗浄工程の際に、図3の「IV」において搬送ロボット30が退避している場合には、洗浄処理槽WB上に再び移動させる(図3の「VII」参照)。   When the chemical treatment of the wafer W is completed, the lid 12 is opened and the lifting / moving mechanism 42 is operated to pull up the holding member 40 from the chemical treatment tank CB and move it again to the adjacent cleaning treatment tank WB. It is immersed in the tank WB and washed (see “VI” in FIG. 3). Also at this time, it is preferable to move the holding member 40 in an arc shape at a position where the moving direction is changed. This wafer cleaning is performed by overflowing the cleaning liquid in the cleaning tank WB, or by replacing the previous cleaning liquid with a new cleaning liquid. By exchanging the cleaning liquid, it is possible to prevent the contaminants removed by the previous cleaning from attaching to the wafer W again. Further, when the holding member 40 is pulled up from the chemical solution treatment tank CB, the lid 12 is quickly closed to prevent the chemical solution from spreading to the outside. In this cleaning process, if the transfer robot 30 is retracted in “IV” in FIG. 3, it is moved again onto the cleaning tank WB (see “VII” in FIG. 3).

上記工程により洗浄されたウェーハWは、昇降・移動機構42を作動することにより洗浄処理槽WBから保持部材40ごと引上げられ(図3の「VIII」参照)、搬送ロボット30へ受け渡される。この受け渡しでは、ウェーハWが純水により洗浄されているので、搬送ロボット30のハンド部材31a、31bが薬液で汚染されることはない。
受け渡されたウェーハWは、搬送ロボット30により最終洗浄処理槽FR上へ移送され、そこで他の保持機構(図示省略)へ受け渡されて最終洗浄が行われ、その後、乾燥処理されて、基板収容部5へ搬送される。基板収容部5では、搬送ロボット30に把持された処理済みウェーハWを受け取ってカセットC中に収納される。
The wafer W cleaned in the above process is pulled up together with the holding member 40 from the cleaning processing tank WB by operating the lifting / lowering mechanism 42 (see “VIII” in FIG. 3), and delivered to the transfer robot 30. In this delivery, since the wafer W is cleaned with pure water, the hand members 31a and 31b of the transfer robot 30 are not contaminated with the chemical solution.
The transferred wafer W is transferred onto the final cleaning tank FR by the transfer robot 30, where it is transferred to another holding mechanism (not shown) for final cleaning, and then subjected to a drying process. It is conveyed to the storage unit 5. In the substrate storage unit 5, the processed wafer W held by the transfer robot 30 is received and stored in the cassette C.

上記基板処理工程によれば、搬送ロボット30が薬液処理槽CB上に停止することがなく、また、薬液処理槽CB上に蓋体12を設けることで、ウェーハWの薬液処理槽CB内外への移動時以外には、外部へ薬液が揮発して発散することがないので、箱型ハウジング7内が薬液雰囲気となることを防ぐことができ、搬送ロボット30が薬液雰囲気に晒されることがないので、搬送ロボット30の腐食・破損等を良好に抑えることができる。   According to the substrate processing step, the transfer robot 30 does not stop on the chemical processing tank CB, and the lid 12 is provided on the chemical processing tank CB, so that the wafer W can be moved into and out of the chemical processing tank CB. Since the chemical solution does not volatilize and diverge to the outside except during movement, the inside of the box-shaped housing 7 can be prevented from becoming a chemical solution atmosphere, and the transfer robot 30 is not exposed to the chemical solution atmosphere. The corrosion / breakage of the transfer robot 30 can be satisfactorily suppressed.

また、この一連の基板処理工程によれば、ウェーハWは、先ず純水等を貯留した洗浄処理槽WBに浸漬して洗浄し、次いで薬液を貯留した薬液処理槽CBに浸漬して薬液処理し、その後、再び上記洗浄処理槽WBに浸漬して洗浄するので、薬液処理前後で水洗洗浄する洗浄処理槽WBを共用できて洗浄処理槽は1槽で済み、従来技術のように2槽設置することがなくなり装置全体を小型化できると共に、その分洗浄液の使用量を少なくできる。   In addition, according to this series of substrate processing steps, the wafer W is first immersed and cleaned in a cleaning processing tank WB storing pure water and the like, and then immersed in a chemical processing tank CB storing chemicals to perform chemical processing. Then, since it is again immersed and washed in the washing treatment tank WB, the washing treatment tank WB for washing with water before and after the chemical treatment can be shared, and only one washing treatment tank is required, and two tanks are installed as in the prior art. As a result, the entire apparatus can be reduced in size, and the amount of cleaning liquid used can be reduced accordingly.

また、ウェーハWは、薬液処理槽へ浸漬する前に洗浄処理槽へ浸漬して洗浄するので、被処理基板に付着した異物は、予め水洗洗浄で除去され、薬液への異物の混入が少なくなる。このため、薬液に異物が混入する量が少なくなり、薬液交換の頻度も少なくでき、結果として薬液の使用量を少なくできる。   Further, since the wafer W is immersed and cleaned in the cleaning treatment tank before being immersed in the chemical treatment tank, the foreign matter adhering to the substrate to be processed is removed in advance by washing with water, and the contamination of the foreign matter into the chemical solution is reduced. . For this reason, the amount of foreign matter mixed in the chemical solution is reduced, the frequency of chemical solution exchange can be reduced, and as a result, the amount of chemical solution used can be reduced.

上記実施例1においては、薬液処理槽CB及び洗浄処理槽WBをそれぞれ1つのみ備えた基板処理装置1について説明したが、これに限らず、複数の薬液を用いて基板の表面処理を行うために各処理槽を複数個設けたものに関しても同様の効果を奏することができる。そこで、以下には実施例2として薬液処理槽及び洗浄処理槽をそれぞれ2つずつ備える基板処理装置1'について説明する。   In the first embodiment, the substrate processing apparatus 1 having only one chemical treatment tank CB and one cleaning treatment tank WB has been described. However, the present invention is not limited to this, and the substrate surface treatment is performed using a plurality of chemical liquids. The same effect can be achieved with a plurality of treatment tanks provided in the same manner. Therefore, a substrate processing apparatus 1 ′ having two chemical processing tanks and two cleaning processing tanks as Example 2 will be described below.

図4は本発明の実施例2の基板処理装置を模式的に示す概略図である。なお、本実施例においては上記実施例1に薬液処理槽及び洗浄処理槽を1つずつ加えた点についてのみ異なり、他の構成はほぼ同一であるので、実施例1と同様の構成についてはその説明を省略し、異なる点についてのみ説明を行う。   FIG. 4 is a schematic view schematically showing a substrate processing apparatus according to Embodiment 2 of the present invention. In this embodiment, only the chemical solution treatment tank and the washing treatment tank are added to the first embodiment one by one, and the other configurations are almost the same. The explanation is omitted, and only different points are explained.

本実施例の基板処理装置1'は、順に基板取出し部2、第1薬液処理槽CB1、第1洗浄処理槽WB1、第2薬液処理槽CB2、第2洗浄処理槽WB2、最終洗浄処理槽FR、乾燥処理槽DRY、基板収容部5が一列に配設されている。また、第1薬液処理槽CB1及び第1洗浄処理槽WB1には、両処理槽の間を昇降・移動可能な保持機構4が設けられ、第2薬液処理槽CB2及び第2洗浄処理槽WB2には、両処理槽の間を昇降・移動可能な保持機構4'が設けられている。加えて、基板取出し部2と基板収容部5との間には、昇降・移動可能な2つの搬送機構3、3'が設けられている。なお、保持機構4、4'及び搬送機構3、3'は実施例1と同一の構成からなるのでその詳細については省略する。ただし、搬送機構3、3'については、その作業効率を向上させるために2つ設けたものであるので、必ずしも2つ設ける必要はなく、1つのみあるいは3つ以上としても良い。   The substrate processing apparatus 1 ′ of this embodiment includes a substrate take-out unit 2, a first chemical processing tank CB 1, a first cleaning processing tank WB 1, a second chemical processing tank CB 2, a second cleaning processing tank WB 2, and a final cleaning processing tank FR. The drying treatment tank DRY and the substrate housing part 5 are arranged in a row. The first chemical treatment tank CB1 and the first cleaning treatment tank WB1 are provided with a holding mechanism 4 that can be moved up and down between both treatment tanks, and the second chemical treatment tank CB2 and the second cleaning treatment tank WB2 Is provided with a holding mechanism 4 'that can be moved up and down between the processing tanks. In addition, two transport mechanisms 3 and 3 ′ that are movable up and down are provided between the substrate take-out unit 2 and the substrate storage unit 5. Since the holding mechanisms 4 and 4 ′ and the transport mechanisms 3 and 3 ′ have the same configuration as that of the first embodiment, the details thereof are omitted. However, since two transport mechanisms 3, 3 ′ are provided in order to improve the working efficiency, it is not always necessary to provide two, and only one or three or more may be provided.

以下に、この基板処理装置1'を使用したウェーハWの基板処理工程を説明する。
先ず、基板処理装置1の運転時には、第1、第2薬液処理槽CB1、CB2の開口は蓋体12、12によって閉じられている。この状態において、基板取出し部2には、複数枚のウェーハWがカセットCに収容されて搬入される。次いで、搬入されたカセットCから、搬送機構3へのウェーハWの受渡しが行われる。搬送機構3へ受け渡されたウェーハWは、先ず、第1洗浄処理槽WB1へ搬送されて、第1洗浄処理槽WB1上で保持機構4の保持部材40へ受け渡される。
Hereinafter, a substrate processing process of the wafer W using the substrate processing apparatus 1 ′ will be described.
First, during operation of the substrate processing apparatus 1, the openings of the first and second chemical solution processing tanks CB 1 and CB 2 are closed by the lid bodies 12 and 12. In this state, a plurality of wafers W are accommodated in the cassette C and loaded into the substrate take-out unit 2. Next, the wafer W is transferred from the loaded cassette C to the transfer mechanism 3. The wafer W transferred to the transfer mechanism 3 is first transferred to the first cleaning treatment tank WB1 and transferred to the holding member 40 of the holding mechanism 4 on the first cleaning process tank WB1.

保持部材40は、昇降・移動機構42によりウェーハWを保持したまま第1洗浄処理槽WB1内の純水に浸漬されウェーハの洗浄が行なわれる。この洗浄は、洗浄処理槽WBに洗浄液供給源から純水が供給され続けることによって行われる。なお、洗浄処理槽WBから溢れた純水は、排水設備を通して外部へ排出される。このとき、搬送機構3の搬送ロボット30は一時的に退避させておくものとする。これは、保持機構4の移動の障害とならないようにするとともに、薬液処理槽CBから離れた位置に退避させるためであって、保持機構4の移動の障害とならない場合には必ずしも移動させる必要はない。   The holding member 40 is immersed in pure water in the first cleaning treatment tank WB1 while the wafer W is held by the elevating / moving mechanism 42 to clean the wafer. This cleaning is performed by continuing to supply pure water from the cleaning liquid supply source to the cleaning treatment tank WB. The pure water overflowing from the cleaning treatment tank WB is discharged to the outside through the drainage facility. At this time, the transport robot 30 of the transport mechanism 3 is temporarily retracted. This is to prevent the movement of the holding mechanism 4 and to retreat to a position away from the chemical treatment tank CB. If the movement of the holding mechanism 4 does not become an obstacle, the movement is not necessarily required. Absent.

ウェーハWの洗浄が完了すると、昇降・移動機構42を作動させて第1洗浄処理槽WB1から保持部材40を引上げ、隣接する第1薬液処理槽CB1に移動させ、保持部材40ごとこの第1薬液処理槽CB1へ浸漬し薬液処理を行う。このとき保持部材40は垂直上昇し、水平移動し、垂直下降するが、移動方向が変わる位置において円弧を描くようにすることで、移動速さを変更することなく移動方向を転ずるようにすることができる。この第1薬液処理槽CB1には、予め所定の薬液、例えばフッ酸が貯留されている。また、蓋体12は保持部材40が第1薬液処理槽CB1上に位置した際に開かれるが、第1薬液処理槽CB1内に保持されればこの蓋体12は閉じる。このとき、前記洗浄工程においてウェーハWは既にその表面が濡れた状態となっており、ウェーハWの濡れ性が向上しているので、薬液処理をより良好に行うことができる。   When the cleaning of the wafer W is completed, the elevating / moving mechanism 42 is operated to pull up the holding member 40 from the first cleaning treatment tank WB1, move it to the adjacent first chemical solution treatment tank CB1, and the first chemical solution together with the holding member 40. Immerse it in the treatment tank CB1 and perform chemical treatment. At this time, the holding member 40 rises vertically, moves horizontally, and descends vertically. However, the moving direction is changed without changing the moving speed by drawing an arc at a position where the moving direction changes. Can do. A predetermined chemical solution such as hydrofluoric acid is stored in advance in the first chemical solution treatment tank CB1. The lid 12 is opened when the holding member 40 is positioned on the first chemical solution treatment tank CB1, but the lid 12 is closed if it is held in the first chemical solution treatment tank CB1. At this time, since the surface of the wafer W is already wet in the cleaning step and the wettability of the wafer W is improved, the chemical treatment can be performed more favorably.

そして、ウェーハWの薬液処理が完了すると、再び蓋体12を開き、昇降・移動機構42を作動させて第1薬液処理槽CB1から保持部材40を引上げ、隣接する第1洗浄処理槽WB1へ再び移動させ、この第1洗浄処理槽WB1へ浸漬し洗浄処理を行う。このときも保持部材40を移動方向を転ずる位置にて円弧状に移動させると好ましい。このウェーハ洗浄は、洗浄処理槽の洗浄液をオーバーフローさせて行う、或いは先の洗浄液を入れ替えて新しい洗浄液で行う。洗浄液の入れ替えを行うことにより、先の洗浄で取り除いた汚染物が再びウェーハWに付着することを防ぐことができる。また、保持部材40が第1薬液処理槽CB1から引き上げられた際には、速やかに蓋体12を閉じ、外部への薬液の発散を阻止する。なお、この洗浄工程の際に、搬送機構3を第1洗浄処理槽WB1上に移動させる。   When the chemical treatment of the wafer W is completed, the lid 12 is opened again, the lifting / moving mechanism 42 is operated to pull up the holding member 40 from the first chemical treatment tank CB1, and again to the adjacent first cleaning treatment tank WB1. It is moved and immersed in the first cleaning tank WB1 for cleaning. Also at this time, it is preferable to move the holding member 40 in an arc shape at a position where the moving direction is changed. This wafer cleaning is performed by overflowing the cleaning liquid in the cleaning tank, or by replacing the previous cleaning liquid with a new cleaning liquid. By exchanging the cleaning liquid, it is possible to prevent the contaminants removed by the previous cleaning from attaching to the wafer W again. Further, when the holding member 40 is pulled up from the first chemical solution treatment tank CB1, the lid body 12 is quickly closed to prevent the chemical solution from spreading to the outside. In this cleaning step, the transport mechanism 3 is moved onto the first cleaning processing tank WB1.

上記工程により洗浄されたウェーハWは、昇降・移動機構42を作動することにより第1洗浄処理槽WB1から保持部材40ごと引上げられ、搬送ロボット30へ受け渡される。この受け渡しでは、ウェーハWが純水により洗浄されているので、搬送ロボット30のハンド部材31a、31bが薬液で汚染されることはない。   The wafer W cleaned in the above process is pulled up together with the holding member 40 from the first cleaning tank WB1 by operating the elevating / moving mechanism 42 and transferred to the transfer robot 30. In this delivery, since the wafer W is cleaned with pure water, the hand members 31a and 31b of the transfer robot 30 are not contaminated with the chemical solution.

搬送ロボット30に受け渡されたウェーハWは、第2洗浄処理槽WB2に搬送され、ここで第2保持機構4'の保持部材40'に受け渡される。そして、保持部材40'は、昇降・移動機構42によりウェーハWを保持したまま第2洗浄処理槽WB2内に浸漬されるが、このとき第2洗浄処理槽WB2には純水等の洗浄液は貯留されていないが、純水の排気・供給の切り換えに手間がかかり、その後の工程に問題が生じないようなら、第2洗浄処理槽WB2に純水を入れたままウェーハWを浸漬しても良い。このように保持機構4'が第2洗浄処理槽WB2内に下降している状態において、保持機構4'の移動の障害とならないように、また次ロット処理の準備のために搬送機構3の搬送ロボット30は基板取出し部2上へ移動させる。   The wafer W transferred to the transfer robot 30 is transferred to the second cleaning treatment tank WB2, where it is transferred to the holding member 40 ′ of the second holding mechanism 4 ′. The holding member 40 'is immersed in the second cleaning bath WB2 while holding the wafer W by the lifting / moving mechanism 42. At this time, cleaning liquid such as pure water is stored in the second cleaning bath WB2. Although it is not performed, if it takes time to switch between exhaust and supply of pure water and no problem occurs in the subsequent processes, the wafer W may be immersed while the pure water is placed in the second cleaning treatment tank WB2. . In this state where the holding mechanism 4 ′ is lowered into the second cleaning treatment tank WB2, the transfer of the transfer mechanism 3 is performed so as not to obstruct the movement of the holding mechanism 4 ′ and to prepare for the next lot process. The robot 30 is moved onto the substrate take-out unit 2.

搬送ロボット30の移動が完了すると、昇降・移動機構42を作動させて第2洗浄処理槽WB2から保持部材40'を引上げ、隣接する第2薬液処理槽CB2に移動させ、保持部材40'ごとこの第2薬液処理槽CB2へ浸漬し薬液処理を行う。この第2薬液処理槽CB2には、第1薬液処理槽CB1に貯留されたものとは異なる薬液が貯留されている。また、蓋体12'は保持部材40'が第2薬液処理槽CB2に移動する際に開かれるが、保持部材40が第2薬液処理槽CB2内に保持中のときには蓋体12を閉じる。加えて、保持部材40'が第2洗浄処理槽WB2内から移動された段階で第2洗浄処理槽WB2が空のときには純水の貯留を開始する。   When the movement of the transfer robot 30 is completed, the lifting / moving mechanism 42 is operated to pull up the holding member 40 'from the second cleaning treatment tank WB2 and move it to the adjacent second chemical solution treatment tank CB2, and this holding member 40' Immerse it in the second chemical treatment tank CB2 to perform chemical treatment. In the second chemical solution treatment tank CB2, a chemical solution different from that stored in the first chemical solution treatment tank CB1 is stored. The lid 12 ′ is opened when the holding member 40 ′ moves to the second chemical liquid treatment tank CB2, but the lid 12 is closed when the holding member 40 is being held in the second chemical liquid treatment tank CB2. In addition, when the holding member 40 ′ is moved from the second cleaning treatment tank WB2, the storage of pure water is started when the second cleaning treatment tank WB2 is empty.

そして、ウェーハWの薬液処理が完了すると、蓋体12'を開き、昇降・移動機構42を作動させて第2薬液処理槽CB2から保持部材40'を引上げ、隣接する第2洗浄処理槽WB2へ再び移動させ、この第2洗浄処理槽WB2へ浸漬し洗浄処理を行う。このウェーハ洗浄は、第2洗浄処理槽WB2の洗浄液をオーバーフローさせて行う。また、保持部材40'が第2薬液処理槽CB2から引き上げられた際には、速やかに蓋体12'を閉じ、外部への薬液の発散を阻止する。なお、この洗浄工程の際に、搬送機構3'を第2洗浄処理槽WB2上に移動させる。   When the chemical treatment of the wafer W is completed, the lid 12 'is opened, the lifting / moving mechanism 42 is operated to pull up the holding member 40' from the second chemical treatment tank CB2, and to the adjacent second cleaning treatment tank WB2. It is moved again and immersed in the second cleaning bath WB2 for cleaning. This wafer cleaning is performed by overflowing the cleaning liquid in the second cleaning processing tank WB2. Moreover, when holding member 40 'is pulled up from 2nd chemical | medical solution processing tank CB2, cover body 12' is closed quickly and the spreading | diffusion of the chemical | medical solution to the exterior is prevented. In this cleaning process, the transport mechanism 3 ′ is moved onto the second cleaning tank WB2.

上記工程により洗浄されたウェーハWは、第2洗浄処理槽WB2から保持部材40'ごと引上げられ、搬送ロボット30'へ受け渡される。受け渡されたウェーハWは、搬送ロボット30'により最終洗浄処理槽FR上へ移送され、そこで他の保持機構(図示省略)へ受け渡されて最終洗浄が行われ、その後、乾燥処理されて、基板収容部5へ搬送される。基板収容部5では、搬送ロボット30'に把持された処理済みウェーハWを受け取ってカセットC中に収納される。   The wafer W cleaned in the above process is pulled up together with the holding member 40 ′ from the second cleaning processing tank WB2 and transferred to the transfer robot 30 ′. The transferred wafer W is transferred onto the final cleaning tank FR by the transfer robot 30 ′, and then transferred to another holding mechanism (not shown) for final cleaning, and then dried. It is conveyed to the substrate housing part 5. In the substrate storage unit 5, the processed wafer W held by the transfer robot 30 ′ is received and stored in the cassette C.

以上に示したように、薬液処理槽及び洗浄処理槽を複数設けた場合であっても、箱型ハウジング7内が薬液雰囲気になることがなく、また、搬送ロボット30、30'にあっては各薬液処理槽CB1、CB2上に停止することがないので、薬液雰囲気に晒されることによる腐食・破損を良好に防止できるとともに、ウェーハWは処理槽内に保持機構4、4'によって浸漬されるので、各処理槽の容積をウェーハの幅ぎりぎりまで小さくでき、処理液の使用量を削減することができるようになる。   As described above, even if a plurality of chemical solution treatment tanks and cleaning treatment tanks are provided, the inside of the box-shaped housing 7 does not become a chemical solution atmosphere, and the transport robots 30 and 30 ′ Since it does not stop on each chemical solution treatment tank CB1, CB2, corrosion and breakage due to exposure to the chemical solution atmosphere can be prevented well, and the wafer W is immersed in the treatment vessel by the holding mechanisms 4, 4 ′. Therefore, the volume of each processing tank can be reduced to the limit of the width of the wafer, and the amount of processing liquid used can be reduced.

なお、上記各実施例において、薬液処理槽にウェーハを浸漬する前に、洗浄処理槽において予めウェーハの洗浄を行うようにしたが、この洗浄処理を行わずに薬液処理を行うようにしても良い。ただし、その場合においても搬送機構から保持機構へのウェーハの受渡しは洗浄処理槽上で行うものとする。   In each of the above embodiments, the wafer is cleaned in advance in the cleaning tank before the wafer is immersed in the chemical tank. However, the chemical processing may be performed without performing the cleaning process. . However, even in that case, delivery of the wafer from the transport mechanism to the holding mechanism is performed on the cleaning treatment tank.

図1は本発明の実施例1の基板処理装置を模式的に示す概略図、FIG. 1 is a schematic view schematically showing a substrate processing apparatus according to Embodiment 1 of the present invention. 図2は図1の基板処理装置の一部縦断面図、2 is a partial longitudinal sectional view of the substrate processing apparatus of FIG. 図3は図1の基板処理装置におけるウェーハの一連の移動過程を示す図、FIG. 3 is a diagram showing a series of wafer movement processes in the substrate processing apparatus of FIG. 図4は本発明の実施例2の基板処理装置を模式的に示す概略図、FIG. 4 is a schematic view schematically showing a substrate processing apparatus according to Embodiment 2 of the present invention. 図5は従来技術の基板処理装置の構造を模式的に示す図、FIG. 5 is a diagram schematically showing the structure of a conventional substrate processing apparatus, 図6は図5のリフタヘッドに設けた基板保持部材の移動を説明する説明図、6 is an explanatory diagram for explaining the movement of the substrate holding member provided in the lifter head of FIG. 図7は他の従来技術の基板処理装置を示す概略構成図である。FIG. 7 is a schematic configuration diagram showing another conventional substrate processing apparatus.

符号の説明Explanation of symbols

W ウェーハ
CB 薬液処理槽
WB 洗浄処理槽
FR 最終洗浄処理槽
DRY 乾燥処理槽
1 基板処理装置
2 基板取出し部
3 搬送機構
4 保持機構
5 基板収納部
7 箱型ハウジング
12 蓋体
30 搬送ロボット
31 挟持部材
31a、31b ハンド部材
40 保持部材
W Wafer CB Chemical solution processing tank WB Cleaning processing tank FR Final cleaning processing tank DRY Drying processing tank 1 Substrate processing apparatus 2 Substrate take-out section 3 Transfer mechanism 4 Holding mechanism 5 Substrate storage section 7 Box-shaped housing 12 Cover 30 Transfer robot 31 Holding member 31a, 31b Hand member 40 Holding member

Claims (10)

内部に所定の薬液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの薬液処理槽と、前記薬液処理槽に隣接する位置に配設され、内部に所定の洗浄液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの洗浄処理槽と、前記被処理基板を保持し前記薬液処理槽及び洗浄処理槽内に浸漬し、かつ1つの前記薬液処理槽と1つの洗浄処理槽との間を往復可能な保持機構と、前記被処理基板を搬送する搬送機構と、を備え、以下の(1)〜(5)の各工程により被処理基板を処理することを特徴とする基板処理法。
(1)前記搬送機構により被処理基板を前記洗浄処理槽上へ搬送する搬送工程、
(2)前記洗浄処理槽上に搬送された被処理基板を前記保持機構へ受け渡す受渡し工程、
(3)前記被処理基板を受け渡された保持機構を前記薬液処理槽上へ移動させて浸漬し被処理基板を薬液処理する薬液処理工程、
(4)前記薬液処理工程の終了後に、前記保持機構を前記薬液処理槽から引き上げて前記洗浄処理槽上へ移動し、前記洗浄処理槽内に浸漬し被処理基板を洗浄する洗浄処理工程、
(5)前記洗浄処理工程の終了後に、前記保持機構を前記洗浄処理槽から引き上げ、被処理基板を前記搬送機構に受け渡す受渡し工程。
A predetermined chemical solution is stored inside, at least one chemical solution processing tank for immersing and processing the substrate to be processed therein, and disposed at a position adjacent to the chemical solution processing tank, and storing a predetermined cleaning solution therein, At least one cleaning treatment tank that immerses and treats the substrate to be treated inside, and holds the substrate to be treated and is immersed in the chemical treatment tank and the cleaning treatment tank, and one chemical treatment treatment tank and one washing A holding mechanism capable of reciprocating between processing tanks and a transport mechanism for transporting the substrate to be processed are provided, and the substrate to be processed is processed by the following steps (1) to (5). Substrate processing method.
(1) A transfer step of transferring the substrate to be processed onto the cleaning treatment tank by the transfer mechanism,
(2) a delivery step of delivering the substrate to be processed conveyed on the cleaning treatment tank to the holding mechanism;
(3) A chemical treatment process for treating the substrate to be treated by immersion by moving the holding mechanism that has passed the substrate to be treated onto the chemical treatment tank.
(4) After completion of the chemical treatment process, the holding mechanism is lifted from the chemical treatment tank, moved onto the cleaning treatment tank, and immersed in the cleaning treatment tank to wash the substrate to be treated;
(5) A delivery step of lifting the holding mechanism from the cleaning treatment tank and delivering the substrate to be processed to the transport mechanism after the completion of the cleaning treatment step.
前記搬送機構は、前記(2)〜(5)の各工程が行われている間は前記薬液処理槽上以外に位置していることを特徴とする請求項1に記載の基板処理法。   2. The substrate processing method according to claim 1, wherein the transport mechanism is positioned other than on the chemical processing tank while the steps (2) to (5) are performed. 前記薬液処理槽及び洗浄処理槽は、複数個隣接して配設されており、それぞれの前記薬液処理槽及び洗浄処理槽ごとに前記(1)〜(5)の工程を繰り返すことを特徴とする請求項1又は2に記載の基板処理法。   A plurality of the chemical solution treatment tanks and the cleaning treatment tanks are arranged adjacent to each other, and the steps (1) to (5) are repeated for each of the chemical solution treatment tanks and the cleaning treatment tanks. The substrate processing method according to claim 1 or 2. 前記(2)の工程の終了後で、前記(3)の薬液処理工程を行う前に、
(2')前記保持機構を前記洗浄処理槽内に浸漬し被処理基板を洗浄処理する洗浄処理工程、
を行うことを特徴とする請求項1〜3のいずれかに記載の基板処理法。
After the completion of the step (2) and before the chemical solution treatment step (3),
(2 ′) A cleaning process step of cleaning the substrate to be processed by immersing the holding mechanism in the cleaning tank.
The substrate processing method according to claim 1, wherein the substrate processing method is performed.
前記(2')の工程の終了後、前記(4)の工程に移行するまでに、前記洗浄処理槽内に貯留された洗浄液は入れ替えられることを特徴とする請求項4に記載の基板処理法。   5. The substrate processing method according to claim 4, wherein after the step (2 ′) is completed, the cleaning liquid stored in the cleaning processing tank is replaced before the process proceeds to the step (4). . 前記薬液処理槽は、上部開口を覆う蓋体及び前記蓋体を開閉させる開閉機構を備え、前記蓋体は、前記被処理基板を前記薬液処理槽に浸漬するとき、及び、前記被処理基板を前記薬液処理槽内から引き上げるときにのみ開放されるように制御することを特徴とする請求項1に記載の基板処理法。   The chemical treatment tank includes a lid body that covers an upper opening and an opening / closing mechanism that opens and closes the lid body. The lid body immerses the substrate to be treated in the chemical treatment tank, and the substrate to be treated. 2. The substrate processing method according to claim 1, wherein the substrate processing method is controlled so as to be opened only when the chemical solution processing tank is pulled up. 最後の前記(5)工程の終了後に、乾燥処理機構により被処理基板を乾燥することを特徴とする請求項1〜6のいずれかに記載の基板処理法。   The substrate processing method according to claim 1, wherein the substrate to be processed is dried by a drying processing mechanism after the last step (5). 内部に所定の薬液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの薬液処理槽と、前記薬液処理槽に隣接する位置に配設され、内部に所定の洗浄液を貯留し、内部に被処理基板を浸漬させて処理する少なくとも1つの洗浄処理槽と、前記被処理基板を保持し前記薬液処理槽及び洗浄処理槽内に浸漬し、かつ1つの前記薬液処理槽と1つの洗浄処理槽との間を往復可能な保持機構と、前記被処理基板を搬送する搬送機構と、を備え、前記請求項1〜6のいずれかに記載の基板処理法を行うことを特徴とする基板処理装置。   A predetermined chemical solution is stored inside, at least one chemical solution processing tank for immersing and processing the substrate to be processed therein, and disposed at a position adjacent to the chemical solution processing tank, and storing a predetermined cleaning solution therein, At least one cleaning treatment tank that immerses and treats the substrate to be treated inside, and holds the substrate to be treated and is immersed in the chemical treatment tank and the cleaning treatment tank, and one chemical treatment treatment tank and one washing A substrate characterized by comprising a holding mechanism capable of reciprocating between processing tanks and a transport mechanism for transporting the substrate to be processed, and performing the substrate processing method according to any one of claims 1 to 6. Processing equipment. 前記被処理基板を乾燥させる乾燥処理槽を更に備え、前記一連の基板処理が完了した後、前記乾燥処理槽により前記被処理基板を乾燥させることを特徴とする請求項8に記載の基板処理装置。   The substrate processing apparatus according to claim 8, further comprising a drying tank that dries the substrate to be processed, wherein the substrate to be processed is dried by the drying tank after the series of substrate processing is completed. . 前記基板処理装置は、さらに前記基板処理装置内にクリーンエア等を供給する給気機構と、前記基板処理槽内の蒸気を含む気体を排気する排気機構とを備えることを特徴とする請求項8又は9に記載の基板処理装置。   9. The substrate processing apparatus further includes an air supply mechanism that supplies clean air or the like into the substrate processing apparatus, and an exhaust mechanism that exhausts a gas containing vapor in the substrate processing tank. Or the substrate processing apparatus according to 9.
JP2005222257A 2005-07-29 2005-07-29 Substrate treatment method and substrate treatment equipment Pending JP2007042691A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7694688B2 (en) 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
US7775219B2 (en) 2006-12-29 2010-08-17 Applied Materials, Inc. Process chamber lid and controlled exhaust
ITMI20110646A1 (en) * 2011-04-15 2012-10-16 St Microelectronics Srl EQUIPMENT FOR SEMICONDUCTOR WAFER PROCESSING, IN PARTICULAR TO CARRY OUT A POLYMER REMOVAL PROCESS PHASE.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7775219B2 (en) 2006-12-29 2010-08-17 Applied Materials, Inc. Process chamber lid and controlled exhaust
US7694688B2 (en) 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
ITMI20110646A1 (en) * 2011-04-15 2012-10-16 St Microelectronics Srl EQUIPMENT FOR SEMICONDUCTOR WAFER PROCESSING, IN PARTICULAR TO CARRY OUT A POLYMER REMOVAL PROCESS PHASE.
US9385011B2 (en) 2011-04-15 2016-07-05 Stmicroelectronics S.R.L. Apparatus for processing semiconductor wafers, in particular for carrying out a polymers removal process step
US9786525B2 (en) 2011-04-15 2017-10-10 Stmicroelectronics S.R.L. Apparatus for processing semiconductor wafers, in particular for carrying out a polymers removal process step

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