CN103897862A - Photovoltaic silicon wafer cleaning agent and cleaning method thereof - Google Patents
Photovoltaic silicon wafer cleaning agent and cleaning method thereof Download PDFInfo
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- CN103897862A CN103897862A CN201210567037.3A CN201210567037A CN103897862A CN 103897862 A CN103897862 A CN 103897862A CN 201210567037 A CN201210567037 A CN 201210567037A CN 103897862 A CN103897862 A CN 103897862A
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Abstract
A photovoltaic silicon wafer cleaning agent and a cleaning method thereof relate to a photovoltaic silicon wafer cleaning agent and chemical and ultrasonic cleaning methods of the photovoltaic silicon wafer. The invention can be applied to the fields of photovoltaic silicon wafer rinsing and cleaning. The cleaning agent is characterized by comprising the components of pure water, sodium carbonate, sodium metasilicate, fatty alcohol polyoxyethylene polyoxypropylene terminated polyether: C12 fatty alcohol polyoxyethylene ether, alkyl benzene sulfonate and alkyl dihydroxy acid salt in a weight ratio of 100:2:2:3:3.5:2:1. The above raw materials are mixed and stirred. A technical scheme of the cleaning method is as below: 1, preparing a cleaning agent by mixing the raw materials are in proportion, and stirring; 2, flushing with pure water: placing the silicon wafer into a container, adding pure water, conducting ultrasonic cleaning at the temperature of 50 DEG C for 5 min; 3, washing with the cleaning agent: placing the silicon wafer in a container, adding the cleaning agent, conducting ultrasonic cleaning at the temperature of 65 DEG C for 5 min; 4, pure water flushing: placing the silicon wafer in a container, adding pure water, conducting ultrasonic cleaning at the temperature of 50 DEG C for 5 min; and 5, drying.
Description
Technical field
The present invention relates to chemistry, the supersonic cleaning method of a kind of photovoltaic silicon wafer sanitising agent and photovoltaic silicon wafer.
Background technology
Solar silicon wafers is the carrier of photovoltaic cell, and the quality of Si wafer quality has directly determined the height of photovoltaic cell efficiency of conversion.Solar silicon wafers is after several procedures such as section, chamfering, grinding, polishing, surface inevitably can be subject to pollution in various degree, therefore, need to clean solar silicon wafers, to remove some particles, metal ion and the organism on its surface.But the quality that solar silicon wafers cleans can affect the quality of silicon chip to a certain extent, deal with the Stability and dependability that can damage silicon chip improperly, even make whole product rejection.Because solar silicon wafers surface before entering per pass technique must be all clean, so need, through repeated washing repeatedly, make the cleaning of silicon chip become a loaded down with trivial details problem, be subject to the attention of domestic and international research institution and enterprise for this reason.This is an operation that photovoltaic industry can not be ignored.A lot of enterprise developments are also produced Wafer Cleaning equipment, so there is on the market multiple technique of cleaning for solar silicon wafers at present, such as ultrasonic cleaning method, RCA standard cleaning, million sound washing out methods, high-pressure injection method, centrifugal atomization method, plasma cleaning, gas phase are cleaned, laser beam cleans etc., form the situation that a hundred flowers blossom.Use which kind of cleaning process, need to select according to the condition of surface on the different silicon chips of different clients, cleanliness factor, pollution condition etc.According to feedback in the industry, in numerous purging methods, using more is ultrasonic cleaning process and RCA standard cleaning method.Up to the present a kind of special clean-out system useless also, and most result of use is unsatisfactory.
Summary of the invention
The present invention aims to provide that a kind of efficiency is high, cleaning effect good, cheap photovoltaic silicon wafer clean-out system, and a kind of ultrasonic cleaning process method is provided.
The technical scheme of photovoltaic silicon wafer sanitising agent of the present invention is: the component that is characterized in this sanitising agent is: be by weight ratio pure water: sodium carbonate: Starso: the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third: C12 fatty alcohol-polyoxyethylene ether: alkylbenzene sulfonate: alkyl dual-hydroxy acid salt=100: 2: 2: 3: 3.5: 2: 1; Above-mentioned raw materials is mixed, fully stir and form.
The technical scheme of cleaning method of the present invention is: be characterized in step 1: make sanitising agent, by pure water, sodium carbonate, Starso, the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third, C12 fatty alcohol-polyoxyethylene ether, alkylbenzene sulfonate, alkyl dual-hydroxy acid salt in 100: 2: 2: 3: 3.5: 2: 1 ratio is mixed, and fully stir; Step 2: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, temperature 50 C, ultrasonic power 80w, frequency 40Hz; Step 3: sanitising agent rinses, puts into container by silicon chip and adds above-mentioned sanitising agent, uses ultrasonic cleaning 5 minutes, 65 ℃ of temperature, ultrasonic power 80w, frequency 40Hz; Step 4: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, temperature 50 C, ultrasonic power 80w, frequency 40Hz; Step 5: dry.
The present invention has following advantage and effect: 1, in clean-out system, sodium carbonate, Starso are alkalis, the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third, C12 fatty alcohol-polyoxyethylene ether, alkylbenzene sulfonate, alkyl dual-hydroxy acid salt are promoting agent, therefore cost is lower, efficiency is high simultaneously, cleaning effect good.2, the technical process of proposition ultrasonic cleaning of the present invention, after cleaning silicon chip, it is residual that any pollutent is can't see on surface under the microscope, and bright in color homogeneous can greatly be saved cost, reduces environmental pollution.
Embodiment
Embodiment 1 one: make sanitising agent, by pure water, sodium carbonate, Starso, the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third, C12 fatty alcohol-polyoxyethylene ether, alkylbenzene sulfonate, alkyl dual-hydroxy acid salt in 100: 2: 2: 3: 3.5: 2: 1 ratio is mixed, and fully stir; Two: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, temperature 50 C, ultrasonic power 80w, frequency 40Hz; Three: sanitising agent rinses, silicon chip is put into container and add above-mentioned sanitising agent, use ultrasonic cleaning 5 minutes, 65 ℃ of temperature, ultrasonic power 80w, frequency 40Hz; Four: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, temperature 50 C, ultrasonic power 80w, frequency 40Hz; Five: dry.
Embodiment 2 one: make sanitising agent, by pure water, sodium carbonate, Starso, the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third, C12 fatty alcohol-polyoxyethylene ether, alkylbenzene sulfonate, alkyl dual-hydroxy acid salt in 100: 2: 2: 3: 3.5: 2: 1 ratio is mixed, and fully stir; Two: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 10 minutes, 40 ℃ of temperature, ultrasonic power 80w, frequency 40Hz; Three: sanitising agent rinses, silicon chip is put into container and add above-mentioned sanitising agent, use ultrasonic cleaning 10 minutes, temperature 70 C, ultrasonic power 100w, frequency 40Hz; Four: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, 40 ℃ of temperature, ultrasonic power 80w, frequency 40Hz; Five: dry.
Embodiment 3 one: make sanitising agent, by pure water, sodium carbonate, Starso, the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third, C12 fatty alcohol-polyoxyethylene ether, alkylbenzene sulfonate, alkyl dual-hydroxy acid salt in 100: 2: 2: 3: 3.5: 2: 1 ratio is mixed, and fully stir; Two: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 3 minutes, temperature 60 C, ultrasonic power 60w, frequency 40Hz; Three: sanitising agent rinses, silicon chip is put into container and add above-mentioned sanitising agent, use ultrasonic cleaning 3 minutes, temperature 60 C, ultrasonic power 60w, frequency 40Hz; Four: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 2 minutes, temperature 60 C, ultrasonic power 80w, frequency 40Hz; Five: dry.
Claims (2)
1. a photovoltaic silicon wafer sanitising agent, the component that it is characterized in that this sanitising agent is: be by weight ratio pure water: sodium carbonate: Starso: the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third: C12 fatty alcohol-polyoxyethylene ether: alkylbenzene sulfonate: alkyl dual-hydroxy acid salt=100: 2: 2: 3: 3.5: 2: 1; Above-mentioned raw materials is mixed, fully stir and form.
2. the cleaning method of a photovoltaic silicon wafer, it is characterized in that: step 1: make sanitising agent, by pure water, sodium carbonate, Starso, the rare end capped polyether of aliphatic alcohol polyethenoxy polyoxy third, C12 fatty alcohol-polyoxyethylene ether, alkylbenzene sulfonate, alkyl dual-hydroxy acid salt in 100: 2: 2: 3: 3.5: 2: 1 ratio is mixed, and fully stir; Step 2: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, temperature 50 C, ultrasonic power 80w, frequency 40Hz; Step 3: sanitising agent rinses, puts into container by silicon chip and adds above-mentioned sanitising agent, uses ultrasonic cleaning 5 minutes, 65 ℃ of temperature, ultrasonic power 80w, frequency 40Hz; Step 4: pure water rinsing, silicon chip is put into container and add pure water, use ultrasonic cleaning 5 minutes, temperature 50 C, ultrasonic power 80w, frequency 40Hz; Step 5: dry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210567037.3A CN103897862A (en) | 2012-12-25 | 2012-12-25 | Photovoltaic silicon wafer cleaning agent and cleaning method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210567037.3A CN103897862A (en) | 2012-12-25 | 2012-12-25 | Photovoltaic silicon wafer cleaning agent and cleaning method thereof |
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| CN103897862A true CN103897862A (en) | 2014-07-02 |
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| CN201210567037.3A Pending CN103897862A (en) | 2012-12-25 | 2012-12-25 | Photovoltaic silicon wafer cleaning agent and cleaning method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104190656A (en) * | 2014-08-27 | 2014-12-10 | 吴中区横泾博尔机械厂 | Automatic cleaning machine for electronic raw materials |
| CN106238401A (en) * | 2016-08-10 | 2016-12-21 | 宁夏晶谷新能源有限公司 | Silicon material no-sour cleaner method |
| CN108690747A (en) * | 2018-06-25 | 2018-10-23 | 安徽全兆光学科技有限公司 | A kind of photovoltaic chip detergent |
| CN110846151A (en) * | 2019-11-22 | 2020-02-28 | 深圳市伯斯特科技有限公司 | Water-based solder paste cleaning agent, and preparation process and cleaning method thereof |
| CN111286415A (en) * | 2020-03-26 | 2020-06-16 | 常州高特新材料股份有限公司 | Double-component silicon wafer cleaning solution |
| CN111849656A (en) * | 2020-08-06 | 2020-10-30 | 中国电子科技集团公司第四十六研究所 | Silicon wafer cleaning solution for power semiconductor device |
-
2012
- 2012-12-25 CN CN201210567037.3A patent/CN103897862A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104190656A (en) * | 2014-08-27 | 2014-12-10 | 吴中区横泾博尔机械厂 | Automatic cleaning machine for electronic raw materials |
| CN104190656B (en) * | 2014-08-27 | 2015-11-25 | 吴中区横泾博尔机械厂 | A kind of ELECTRICAL MATERIALS automatic rinser |
| CN106238401A (en) * | 2016-08-10 | 2016-12-21 | 宁夏晶谷新能源有限公司 | Silicon material no-sour cleaner method |
| CN108690747A (en) * | 2018-06-25 | 2018-10-23 | 安徽全兆光学科技有限公司 | A kind of photovoltaic chip detergent |
| CN110846151A (en) * | 2019-11-22 | 2020-02-28 | 深圳市伯斯特科技有限公司 | Water-based solder paste cleaning agent, and preparation process and cleaning method thereof |
| CN111286415A (en) * | 2020-03-26 | 2020-06-16 | 常州高特新材料股份有限公司 | Double-component silicon wafer cleaning solution |
| CN111849656A (en) * | 2020-08-06 | 2020-10-30 | 中国电子科技集团公司第四十六研究所 | Silicon wafer cleaning solution for power semiconductor device |
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Application publication date: 20140702 |