CN102569036B - Silicon wafer cleaning technology - Google Patents
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- CN102569036B CN102569036B CN201210061167.XA CN201210061167A CN102569036B CN 102569036 B CN102569036 B CN 102569036B CN 201210061167 A CN201210061167 A CN 201210061167A CN 102569036 B CN102569036 B CN 102569036B
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Abstract
The invention discloses a silicon wafer cleaning technology, which takes a cut silicon wafer as a processing object, and is sequentially carried out according to the following steps of: step 1, putting the silicon wafer into an ultrasonic cleaner which contains cleaning mixed solution for cleaning; step 2, rinsing; step 3, drying; step 4, putting the silicon wafer into etchant solution to be corroded; step 5, rinsing; step 6, ultrasonically cleaning the silicon wafer; step 7, rinsing; step 8, drying; and step 9, putting the silicon wafer which is dried in the step 8 into an oven to be dried, i.e. the cleaning of the silicon wafer is finished. The silicon wafer cleaning technology disclosed by the invention has the characteristics of reasonable technology, high cleanness of a silicon wafer surface and the like.
Description
Technical field
The present invention relates to a kind of cleaning that is mainly used in the silicon chip of electronic device, the cleaning of this silicon chip is also applicable to the cleaning of solar silicon wafers.
Background technology
At present, the cleaning of described silicon chip, be silicon chip after cutting be to process object, silicon chip is put into the cleaning solution of breathing out rub powder and deionized water preparation, repeatedly clean more than three times, then by drier, dry, its concrete technology step is:
The first step: silicon chip is put into and the first supersonic wave cleaning machine of breathing out the powder mixed solution that rubs is housed is cleaned, and is 80-85 ℃ in deionized water temperature, Ultrasonic Cleaning 15 ~ 20 minutes;
Second step: take out silicon chip in the first supersonic wave cleaning machine, put into eight times above rear taking-ups of tank flushing that deionized water is housed;
The 3rd step, puts into silicon chip the second supersonic wave cleaning machine of breathing out the powder mixed solution that rubs is housed cleans, and in deionized water temperature, is 80-85 ℃, Ultrasonic Cleaning 15 ~ 20 minutes;
The 4th step is taken out silicon chip in the second supersonic wave cleaning machine, puts into eight times above rear taking-ups of tank flushing that deionized water is housed;
The 5th step, puts into by silicon chip the 3rd supersonic wave cleaning machine that deionized water is housed and cleans, and in deionized water temperature, is 80-85 ℃, Ultrasonic Cleaning 15 ~ 20 minutes;
The 6th step is taken out silicon chip in the 3rd supersonic wave cleaning machine, puts into eight times above rear taking-ups of tank flushing that deionized water is housed;
The 7th step, the silicon chip after the 6th step is rinsed is put into drier and is dried, and cleans complete.
And silicon chip existing three is washed three and is floated cleaning way and have certain shortcoming: the first, because the Kazakhstan powder that rubs is powdered granule thing, when itself and deionized water preparation cleaning solution, can lump or bonding, even if being placed on container for stirring also can be bonded on chamber wall, water-soluble validity is poor, therefore, the silicon chip surface after cleaning is not bright and clean, and cleaning performance is not good; The second, because the silicon chip surface cleanliness factor after cleaning is low, make the phenomenons such as silicon chip surface meeting spottiness and cut; With after filter paper wiping, filter paper also has the situation of blackout, and silicon chip surface fineness is low, so that silicon chip also will grind and polishing; The electrical property that detects silicon chip is general only in 1400NS left and right anti-phase recovery time, puncture voltage is also more discrete, and generally, within the scope of 800 ~ 1400V, not only processing technology is loaded down with trivial details, inefficiency to make silicon chip, and the electrical property that detects silicon chip is low, qualification rate is low; The 3rd, owing to will discharging every day in a large number by Kazakhstan rub powder and the formulated cleaning solution of water, therefore, pollute large, energy-conserving and environment-protective not.
Summary of the invention
The object of the invention is: provide a kind of technique reasonable, the silicon wafer cleaning process that silicon chip surface cleannes are high, to overcome the deficiency of prior art.
The technical scheme that realizes the object of the invention is: a kind of cleaning of silicon chip, and the silicon chip of take through cutting process is processing object, and its cleaning is carried out successively according to the following steps:
The first step: silicon chip is put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period was controlled within the scope of 16 ~ 25 minutes, the FREQUENCY CONTROL of described supersonic wave cleaning machine is within the scope of 40 ~ 55Hz, and described cleaning mixed solution is by deionized water: cleaning agent is the mixed liquor of 22 ~ 25: 0.6 ~ 1.0 preparation by volumetric ratio;
Second step: by the silicon chip after the first step is cleaned, put into after the tank that deionized water is housed repeatedly rinses and take out;
The 3rd step: the silicon chip after second step rinses is put into drier and dry, and the rotating speed of drier is controlled within the scope of 650 ~ 750 revs/min;
The 4th step: the silicon chip after the 3rd step dries is put into etchant solution and corrode, and the time was controlled within the scope of 30 ~ 45 seconds; Described etchant solution is by nitric acid: hydrofluoric acid: glacial acetic acid: deionized water is the mixed liquor of 1 ~ 2:2 ~ 4:1 ~ 2:3 ~ 6.8 preparation by volumetric ratio;
The 5th step: taking-up after the silicon chip after the 4th step corrosion is put into the tank that deionized water is housed and repeatedly rinsed;
The 6th step: the silicon chip after the 5th step is rinsed is put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period is controlled within the scope of 16 ~ 25 minutes, the FREQUENCY CONTROL of described supersonic wave cleaning machine is within the scope of 40 ~ 55Hz; Described cleaning mixed solution is by deionized water: cleaning agent is the mixed liquor of 22 ~ 25: 0.6 ~ 1.0 preparation by volumetric ratio;
The 7th step: the silicon chip after the 6th step Ultrasonic Cleaning is put into after the tank that deionized water is housed repeatedly rinses and taken out;
The 8th step: the silicon chip after the 7th step is rinsed is put into drier and dry, and the rotating speed of drier is controlled within the scope of 650 ~ 750 revs/min;
The 9th step: the silicon chip after the 8th step dries is put into baking oven drying 25 ~ 65 minutes, and temperature is controlled within the scope of 40 ~ 90 ℃, Wafer Cleaning is complete.
In the cleaning of above-mentioned silicon chip, the cleaning agent in described cleaning mixed solution, is that its composition comprises potassium hydroxide, anion/cation surfactant, the JH-16 cleaning agent of complexing agent and defoamer.
In the cleaning of above-mentioned silicon chip, before the 3rd step dries the silicon chip after rinsing, also comprise cleaning, water-washing step again; Describedly again clean, water-washing step, be that silicon chip is again put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period was controlled within the scope of 10 ~ 20 minutes; After silicon chip Ultrasonic Cleaning, then put into after the tank that deionized water is housed repeatedly rinses and take out, and then enter the 3rd step drying step.That is to say that described cleaning, the visual actual conditions of water-washing step need repeatedly repeatedly to carry out.
The present invention advocates to clean for 2 ~ 3 times, water-washing step hockets repeatedly; And described washed with de-ionized water number of times, in 3 ~ 10 underranges.
Technique effect of the present invention is: in cleaning of the present invention, cleaning solution used is formulated by cleaning agent and deionized water, because cleaning agent is liquid, when itself and deionized water preparation cleaning solution, water-soluble validity is high, silicon chip after cleaning is surperficial immaculate, anhydrous mark and no marking not only, and cleans thorough; Adopt filter paper in silicon chip surface wiping check back and forth, filter paper surface changes without blackout, and therefore, the silicon chip surface cleannes after cleaning are high, and cleaning performance is good; Again because the cleaning performance of silicon chip is good, and silicon chip is through corrosion treatment, make silicon chip surface have the thinning of 3 microns, can improve the fineness of silicon chip surface, and without grinding and polishing, detect the electrical property of silicon chip and can bring up to 1800NS left and right anti-phase recovery time, breakdown potential pressure energy focuses within the scope of 1280 ~ 1500V.Not only silicon wafer cleaning process is simple in the present invention, operating efficiency is high, and electrical property is high, and qualification rate is high; The cleaning solution that the present invention uses can be reused more than 20 times, and silicon slice corrosion etchant solution used only need add the reduction after acid and pasc reaction, therefore, can greatly reduce the discharge capacity of solution, and energy-conserving and environment-protective.
Embodiment
Below in conjunction with the description of embodiment, the present invention is further illustrated, but be not limited to this.
Embodiment is unless otherwise indicated raw materials used, is the conventional raw material using of semicon industry and is commercially available product.
Embodiment
A cleaning for silicon chip, the silicon chip of take through cutting process is processing object, and this cleaning is carried out successively according to the following steps:
The first step: silicon chip is put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period is controlled within the scope of 16 ~ 25 minutes, the FREQUENCY CONTROL of described supersonic wave cleaning machine is within the scope of 40 ~ 55Hz; Described cleaning mixed solution is by deionized water: cleaning agent is the mixed liquor of 22 ~ 25: 0.6 ~ 1.0 preparation by volumetric ratio; Its manner of formulation is to be at 40 ~ 60 ℃ in deionized water temperature, and deionized water and cleaning agent are mixed and stirred 5 ~ 10 minutes, obtains cleaning mixed solution.If wherein the temperature of deionized water is lower than 40 ℃,, a little less than the active ability of cleaning agent, may cause the cleaning performance of silicon chip bad; If the temperature of deionized water is higher than 60 ℃, cleaning agent can lose efficacy due to excess Temperature; If the frequency of supersonic wave cleaning machine is lower than 40Hz, the effect of ultrasonic cleaning is bad, makes silicon chip surface cleanliness factor low; If the frequency of supersonic wave cleaning machine is higher than 55Hz, Ultrasonic Cleaning frequency is too large, causes silicon chip can make fragmented phenomenon, affects the rate of finished products of silicon chip;
Second step: by the silicon chip after the first step is cleaned, put into six times above rear taking-ups of tank flushing that deionized water is housed;
The 3rd step: the silicon chip after second step rinses is put into drier and dry, and the rotating speed of drier is controlled within the scope of 650 ~ 750 revs/min;
The 4th step: the silicon chip after the 3rd step dries is put into etchant solution and corrode, and the time was controlled within the scope of 30 ~ 45 seconds; Described etchant solution is by nitric acid: hydrofluoric acid: glacial acetic acid: deionized water is the mixed liquor of 1 ~ 2:2 ~ 4:1 ~ 2:3 ~ 6.8 preparation by volumetric ratio; Its manner of formulation is first deionized water to be poured in container, then nitric acid, hydrofluoric acid and glacial acetic acid is poured into mix in container and is stirred 2 ~ 4 minutes, then in container, inject deionized water and mix and stir 0.5 ~ 1.5 minute, obtains etchant solution;
The 5th step: taking-up after the silicon chip after the 4th step corrosion is put into the tank that deionized water is housed and rinsed more than three times;
The 6th step: the silicon chip after the 5th step is rinsed is put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period was controlled within the scope of 16 ~ 25 minutes, the FREQUENCY CONTROL of described supersonic wave cleaning machine is within the scope of 40 ~ 55Hz, and described cleaning mixed solution is by deionized water: cleaning agent is the mixed liquor of 22 ~ 25: 0.6 ~ 1.0 preparation by volumetric ratio.Its manner of formulation is to be under 40 ~ 60 ℃ of conditions in deionized water temperature, and deionized water and cleaning agent are mixed and stirred 5 ~ 10 minutes, obtains cleaning mixed solution;
The 7th step: the silicon chip after the 6th step Ultrasonic Cleaning is put into after the tank that deionized water is housed rinses more than six times and taken out;
The 8th step: the silicon chip after the 7th step is rinsed is put into drier and dry, and the rotating speed of drier is controlled within the scope of 650 ~ 750 revs/min;
The 9th step: the silicon chip after the 8th step dries is put into baking oven drying 25 ~ 65 minutes, and temperature is controlled within the scope of 40 ~ 90 ℃, Wafer Cleaning is complete.
Cleaning agent Shi Youjunhe Dacroment Co., Ltd in cleaning mixed solution of the present invention produces, and the trade mark is JH-16, and its composition comprises potassium hydroxide, anion/cation surfactant, complexing agent and defoamer; Wherein, if while adopting anion surfactant, after it dissociates in water, generate hydrophobicity anion, be the electronegative surfactant of part with surface-active action; If employing cationic surfactant, after its water-soluble dissociating, the formed hydrophilic group being connected with lipophilic group is the surfactant with positive electricity; The emulsification of anion/cation surfactant, good dispersion; Complexing agent, also referred to as chelating agent, can form complex ion compound with metal ion; Defoamer, is called again anti-foaming agent, can eliminate foam.
Glacial acetic acid in etchant solution of the present invention is to be produced by Jiangyin chemical reagent factory, and its specification is that top grade is pure, its molecular formula: CH3C00H; Nitric acid is to be produced by Jiangyin chemical reagent factory, and its specification is pure for analyzing, its molecular formula: HNO3; Hydrofluoric acid is to be produced by Jiangyin chemical reagent factory, and its specification is pure for analyzing, its molecular formula: HF.
In order to improve the cleaning performance of silicon chip, make the cleannes of silicon chip surface high, before the 3rd step dries the silicon chip after rinsing, also comprise cleaning, water-washing step again; Describedly again clean, water-washing step, be that silicon chip is again put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period was controlled within the scope of 10 ~ 20 minutes; After silicon chip Ultrasonic Cleaning, then put into after the tank that deionized water is housed repeatedly rinses and take out, and then enter the 3rd step drying step.
Lab scale effect of the present invention shows, adopt the present invention better than the cleaning quality of prior art cleaning, silicon chip after cleaning is surperficial immaculate, anhydrous mark and no marking not only, and clean thorough, effectively improve the cleannes of silicon chip surface, for manufacturing high-quality electronic device silicon chip, provide technical support.
Claims (2)
1. a cleaning for silicon chip, the silicon chip of take through cutting process is processing object, it is characterized in that: this cleaning is carried out successively according to the following steps:
The first step: silicon chip is put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period was controlled within the scope of 16 ~ 25 minutes, the FREQUENCY CONTROL of described supersonic wave cleaning machine is within the scope of 40 ~ 55Hz, and described cleaning mixed solution is by deionized water: cleaning agent is the mixed liquor of 22 ~ 25: 0.6 ~ 1.0 preparation by volumetric ratio; And cleaning agent in described cleaning mixed solution is that its composition comprises potassium hydroxide, anion/cation surfactant, the JH-16 cleaning agent of complexing agent and defoamer;
Second step: by the silicon chip after the first step is cleaned, put into after the tank that deionized water is housed repeatedly rinses and take out;
The 3rd step: the silicon chip after second step rinses is put into drier and dry, and the rotating speed of drier is controlled within the scope of 650 ~ 750 revs/min;
The 4th step: the silicon chip after the 3rd step dries is put into etchant solution and corrode, and the time was controlled within the scope of 30 ~ 45 seconds; Described etchant solution is by nitric acid: hydrofluoric acid: glacial acetic acid: deionized water is the mixed liquor of 1 ~ 2:2 ~ 4:1 ~ 2:3 ~ 6.8 preparation by volumetric ratio;
The 5th step: taking-up after the silicon chip after the 4th step corrosion is put into the tank that deionized water is housed and repeatedly rinsed;
The 6th step: the silicon chip after the 5th step is rinsed is put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period is controlled within the scope of 16 ~ 25 minutes, the FREQUENCY CONTROL of described supersonic wave cleaning machine is within the scope of 40 ~ 55Hz; Described cleaning mixed solution is by deionized water: cleaning agent is the mixed liquor of 22 ~ 25: 0.6 ~ 1.0 preparation by volumetric ratio; And cleaning agent in described cleaning mixed solution is that its composition comprises potassium hydroxide, anion/cation surfactant, the JH-16 cleaning agent of complexing agent and defoamer;
The 7th step: the silicon chip after the 6th step Ultrasonic Cleaning is put into after the tank that deionized water is housed repeatedly rinses and taken out;
The 8th step: the silicon chip after the 7th step is rinsed is put into drier and dry, and the rotating speed of drier is controlled within the scope of 650 ~ 750 revs/min;
The 9th step: the silicon chip after the 8th step dries is put into baking oven drying 25 ~ 65 minutes, and temperature is controlled within the scope of 40 ~ 90 ℃, Wafer Cleaning is complete.
2. the cleaning of silicon chip according to claim 1, is characterized in that: before the 3rd step dries the silicon chip after rinsing, also comprise cleaning, water-washing step again; Describedly again clean, water-washing step, be that silicon chip is again put into and the supersonic wave cleaning machine that cleans mixed solution is housed is cleaned, and scavenging period was controlled within the scope of 10 ~ 20 minutes; After silicon chip Ultrasonic Cleaning, then put into after the tank that deionized water is housed repeatedly rinses and take out, and then enter the 3rd step drying step.
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| CN104925742B (en) * | 2014-03-20 | 2016-09-07 | 中芯国际集成电路制造(上海)有限公司 | The forming method of MEMS semiconductor devices |
| CN104051254A (en) * | 2014-06-12 | 2014-09-17 | 江阴新顺微电子有限公司 | Semiconductor chip back side silicon corrosion technique |
| CN104986769A (en) * | 2014-12-17 | 2015-10-21 | 马鞍山明鑫光能科技有限公司 | Raw material recovery and cleaning method of IC photolithography sheets |
| CN109904085B (en) * | 2017-12-07 | 2021-06-22 | 有研半导体材料有限公司 | Equipment and method for detecting cleanliness of rough machining surface of wafer |
| JP7258915B2 (en) * | 2018-04-27 | 2023-04-17 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | Method and apparatus used for cleaning semiconductor wafers |
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| CN102021658A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
| CN102021657A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Corrosion process for heavily doped monocrystalline silicon wafers sequentially subjected to acid corrosion and alkaline corrosion |
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