CN102021657A - Corrosion process for heavily doped monocrystalline silicon wafers sequentially subjected to acid corrosion and alkaline corrosion - Google Patents
Corrosion process for heavily doped monocrystalline silicon wafers sequentially subjected to acid corrosion and alkaline corrosion Download PDFInfo
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- CN102021657A CN102021657A CN2010105812445A CN201010581244A CN102021657A CN 102021657 A CN102021657 A CN 102021657A CN 2010105812445 A CN2010105812445 A CN 2010105812445A CN 201010581244 A CN201010581244 A CN 201010581244A CN 102021657 A CN102021657 A CN 102021657A
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Abstract
The invention relates to a corrosion process for a heavily doped monocrystalline silicon wafer sequentially subjected to acid corrosion and alkaline corrosion. The corrosion process is implemented through the following steps: firstly, carrying out acid corrosion on a monocrystalline silicon wafer by acid corrosive liquid, wherein the acid corrosive liquid is prepared from 10 to 20 percent of hydrofluoric acid, 30 to 35 percent of nitric acid and 50 to 60 percent of acetic acid, the corrosion temperature is 22 DEG C, the corrosion time is 32 seconds, and the removal amount of acid corrosion is about 20 mu m; then, cleaning the monocrystalline silicon wafer subjected to acid corrosion for 5 minutes by way of overflowed water washing, and drying the monocrystalline silicon wafer; and finally, carrying out alkaline corrosion on the monocrystalline silicon wafer by a KOH aqueous solution, wherein the concentration of the KOH aqueous solution is 30 percent, the corrosion temperature is 90 DEG C, the corrosion time is 128 seconds, and the removal amount of the alkali corrosion is about 10 mu m. The corrosion process has the advantages that by using the corrosion process, the heavily doped monocrystalline silicon wafers of which the TTV (total thickness variation) added value is less than 1.5 mu m and the roughness Ra is less than 0.5 mu m can be produced with stable yield, and the product percent of pass can be more than 98 percent, therefore, the corrosion process meets the demands of the market on the low-roughness heavily doped monocrystalline silicon wafers, and holds a vantage position in the market.
Description
Technical field
The present invention relates to the monocrystalline silicon piece production method, the etching process of caustic corrosion after the first acid corrosion of particularly a kind of heavily doped monocrystalline silicon piece.
Background technology
Silicon polished main work flow comprises single crystal growing → barreling → section → chamfering → grinding → corrosion → polishing → cleaning → packing etc.Wherein corrosion is important production process, and its effect is that the stress that its surface produces because of mechanical workout is formed with the mechanical stress affected layer of certain depth after removing mechanical workouts such as the section of silicon single-crystal silicon chip process, grinding.Usual method is acid corrosion liquid or caustic corrosion liquid and the monocrystalline silicon piece generation chemical reaction that adopts under finite concentration and the certain temperature, thereby reaches the purpose of removing affected layer.The principle of the technology of caustic corrosion is: Si+2OH
-+ 4H
2O=Si (OH)
6 -2+ 2H
2, this is a kind of anisotropic etch process, corrosion back silicon chip surface is smooth; And since caustic corrosion to have technology simple, corrosive fluid need not to stir, erosion rate is controlled; Environmental protection treatment is easier to relatively, nontoxic, advantage such as waste liquid can be recycled, and present domestic polished section production firm uses in the technology of this procedure multiselect with caustic corrosion.Caustic corrosion liquid commonly used mainly contains two classes, and a class is the mineral alkali etching reagent, and as potassium hydroxide solution, a class is the organic bases etching reagent, as EPW (abbreviation of quadrol, phthalic acid and water) etc.Wherein because potassium hydroxide solution technology comparative maturity, the corrosive fluid cost is lower, and erosion rate is advantage faster again, is generally adopted by domestic polished section production firm.
But regrettably, the technology of conventional caustic corrosion also exists limitation, and is slower such as its erosion rate, may be at the remained on surface metal ion etc., and particularly the monocrystalline silicon sheet surface after its corrosion is coarse, adsorbs impurity easily and can have a strong impact on parameter indexs such as life-span.In addition, along with development of semiconductor, particularly the application of large size (referring to more than 6 inches) monocrystalline silicon piece in unicircuit also had higher requirement to monocrystalline silicon sheet surface planeness and working accuracy.
Summary of the invention
The objective of the invention is at above-mentioned existing problems, the etching process of caustic corrosion after the acid corrosion of a kind of heavily doped monocrystalline silicon piece elder generation is provided.This technology is at heavily doped monocrystalline silicon piece, take to carry out earlier the method that caustic corrosion is carried out in acid corrosion again, utilize the corrosion of acid corrosion technology, removal amount reaches 20 μ m, utilize the technology corrosion of caustic corrosion again, removal amount reaches 10 μ m, can stably produce the TTV increased value less than 1 μ m, and roughness Ra is less than the heavily doped silicon single crystal etched sheet of 0.5 μ m.
The present invention take technical scheme be: the etching process of caustic corrosion after the acid corrosion of a kind of heavily doped monocrystalline silicon piece elder generation, it is characterized in that: its technology is as follows:
1) heavily doped monocrystalline silicon piece is put into acid corrosion liquid carries out acid corrosion, earlier, and acid corrosion liquid is to carry out blended solution by hydrofluoric acid, nitric acid, acetic acid, and the shared weight percent of each component is: hydrofluoric acid 10%～20%; Nitric acid 30%～35%; Acetic acid 50%～60%; Set 22 ℃ of corrosion temperatures; Etching time is 32s;
2), the monocrystalline silicon piece after the acid corrosion put into the ultrasonic cleaning machine clean, overflow washing 5min puts into drier again and dries;
3), to put into concentration be that 30% potassium hydroxide aqueous solution carries out caustic corrosion to the monocrystalline silicon piece after will drying, corrosion temperature is 90 ℃, etching time is 2min 8s.
The beneficial effect that the present invention produced: take this technology, can stably produce the TTV increased value less than 1 μ m, roughness Ra is less than the heavily doped corrosion monocrystalline silicon piece of 0.5 μ m, and product percent of pass is up to more than 98%.Thereby can satisfy the demand of market, and will in market, occupy vantage point the heavily doped etched sheet of low roughness.
Embodiment
The invention will be further described below in conjunction with example:
Embodiment: 6 inches heavily doped monocrystalline silicon pieces, resistivity are 0.002～0.005 Ω. ㎝, and silicon chip TTV before the corrosion＜1, it is two-sided that removal amount requires to remove 60um/.Concrete etching process step is as follows:
That 1) will clean waits that corroding monocrystalline silicon piece puts into the acid corrosion machine from the sheet basket;
2) selecting the acid corrosion liquid proportional is hydrofluoric acid: nitric acid: acetic acid=15%:32%:53% processes; It is 22 ℃ that corrosion temperature is set; Etching time is 32s;
3) start the acid corrosion machine, begin corrosion; The acid corrosion removal amount is about 20 μ m;
4) after acid corrosion finishes, the monocrystalline silicon piece after the acid corrosion is taken out from the acid corrosion machine; The sheet basket that monocrystalline silicon piece is housed is put into the ultrasonic cleaning machine clean, overflow washing 5min puts into drier and dries;
5) configuration caustic corrosion liquid is poured solid potassium hydroxide in the caustic corrosion groove into earlier, injects pure water again in groove, is modulated into solid potassium hydroxide: the aqueous solution of water=30%:70%;
6) the caustic corrosion machine is warming up to 90 ℃;
7) silicon chip to be processed is put into the caustic corrosion machine, the beginning caustic corrosion; Etching time is 2min 8s; The caustic corrosion removal amount is about 10 μ m;
8) after caustic corrosion finishes, take out silicon chip, put into waterwheel; Monocrystalline silicon piece after the caustic corrosion is cleaned with cleaning machine equipment, dry afterwards, send and test.
Technique effect detects: adopt above-mentioned acid corrosion to add 1637 of 6 inches heavily doped monocrystalline silicon pieces of explained hereafter of caustic corrosion.To corrode back monocrystalline silicon piece TTV＜2, roughness is tested less than the inspecting standard of 0.5 μ m, and qualified 1608, qualification rate is 98.23%.
This detected result shows: this etching process can effectively improve surfaceness by taking the first acid corrosion method corrosion monocrystalline silicon piece of caustic corrosion again; This invention can realize the volume production of the heavily doped etched sheet of low roughness.
Claims (1)
1. the etching process of caustic corrosion after the heavily doped monocrystalline silicon piece elder generation acid corrosion, it is characterized in that: its technology is as follows:
(1), earlier heavily doped monocrystalline silicon piece is put into acid corrosion liquid carries out acid corrosion, and acid corrosion liquid is to carry out blended solution by hydrofluoric acid, nitric acid, acetic acid, and the shared weight percent of each component is: hydrofluoric acid 10%～20%; Nitric acid 30%～35%; Acetic acid 50%～60%; Set 22 ℃ of corrosion temperatures; Etching time is 32s;
(2), the monocrystalline silicon piece after the acid corrosion put into the ultrasonic cleaning machine clean, overflow washing 5min puts into drier again and dries;
(3), to put into concentration be that 30% potassium hydroxide aqueous solution carries out caustic corrosion to the monocrystalline silicon piece after will drying, corrosion temperature is 90 ℃, etching time is 2min 8s.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105812445A CN102021657A (en) | 2010-12-10 | 2010-12-10 | Corrosion process for heavily doped monocrystalline silicon wafers sequentially subjected to acid corrosion and alkaline corrosion |
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| CN2010105812445A CN102021657A (en) | 2010-12-10 | 2010-12-10 | Corrosion process for heavily doped monocrystalline silicon wafers sequentially subjected to acid corrosion and alkaline corrosion |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324386A (en) * | 2011-09-15 | 2012-01-18 | 宜兴市环洲微电子有限公司 | Preparation method of silicon chip used for planar solid discharge tube chip manufacturing process |
| CN102569036A (en) * | 2012-03-09 | 2012-07-11 | 常州银河半导体有限公司 | Silicon wafer cleaning technology |
| CN103382578A (en) * | 2012-05-03 | 2013-11-06 | 吉林庆达新能源电力股份有限公司 | Method for treating monocrystalline silicon wafer surface |
| CN103603055A (en) * | 2013-11-25 | 2014-02-26 | 英利能源（中国）有限公司 | Polishing method of monocrystalline silicon wafer, solar cell and manufacturing method thereof |
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN109560023A (en) * | 2018-10-26 | 2019-04-02 | 北京亦盛精密半导体有限公司 | A kind of nitration mixture and its cleaning method cleaning monocrystalline silicon piece |
| CN111128714A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN113793799A (en) * | 2021-07-09 | 2021-12-14 | 麦斯克电子材料股份有限公司 | Method for cleaning surface fog defects of heavily arsenic-doped silicon wafer after acid corrosion |
| CN116403894A (en) * | 2023-05-10 | 2023-07-07 | 重庆臻宝科技股份有限公司 | Alkaline etching method for monocrystalline silicon |
-
2010
- 2010-12-10 CN CN2010105812445A patent/CN102021657A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324386A (en) * | 2011-09-15 | 2012-01-18 | 宜兴市环洲微电子有限公司 | Preparation method of silicon chip used for planar solid discharge tube chip manufacturing process |
| CN102569036A (en) * | 2012-03-09 | 2012-07-11 | 常州银河半导体有限公司 | Silicon wafer cleaning technology |
| CN103382578A (en) * | 2012-05-03 | 2013-11-06 | 吉林庆达新能源电力股份有限公司 | Method for treating monocrystalline silicon wafer surface |
| CN103603055A (en) * | 2013-11-25 | 2014-02-26 | 英利能源（中国）有限公司 | Polishing method of monocrystalline silicon wafer, solar cell and manufacturing method thereof |
| CN103603055B (en) * | 2013-11-25 | 2016-03-23 | 英利能源（中国）有限公司 | The finishing method, solar battery sheet and preparation method thereof of monocrystalline silicon piece |
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN109560023A (en) * | 2018-10-26 | 2019-04-02 | 北京亦盛精密半导体有限公司 | A kind of nitration mixture and its cleaning method cleaning monocrystalline silicon piece |
| CN111128714A (en) * | 2019-12-31 | 2020-05-08 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN111128714B (en) * | 2019-12-31 | 2022-06-03 | 杭州中欣晶圆半导体股份有限公司 | Acid etching process for reducing heavily boron-doped color spots |
| CN113793799A (en) * | 2021-07-09 | 2021-12-14 | 麦斯克电子材料股份有限公司 | Method for cleaning surface fog defects of heavily arsenic-doped silicon wafer after acid corrosion |
| CN113793799B (en) * | 2021-07-09 | 2022-07-01 | 麦斯克电子材料股份有限公司 | Method for cleaning surface fog defects of heavily arsenic-doped silicon wafer after acid corrosion |
| CN116403894A (en) * | 2023-05-10 | 2023-07-07 | 重庆臻宝科技股份有限公司 | Alkaline etching method for monocrystalline silicon |
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Open date: 20110420 |