CN101498055A - Polishing treatment method for solar grade monocrystal silicon bar - Google Patents
Polishing treatment method for solar grade monocrystal silicon bar Download PDFInfo
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- CN101498055A CN101498055A CNA2009100955280A CN200910095528A CN101498055A CN 101498055 A CN101498055 A CN 101498055A CN A2009100955280 A CNA2009100955280 A CN A2009100955280A CN 200910095528 A CN200910095528 A CN 200910095528A CN 101498055 A CN101498055 A CN 101498055A
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- single crystal
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- crystal silicon
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Abstract
The invention relates to a polishing treatment method of a solar-grade single crystal silicon rod. The method comprises the following the steps: soaking the solar-grade single crystal silicon rod into acid liquor with lower concentration of hydrofluoric acid, removing a damaged layer and eliminating the stress of the solar-grade single crystal silicon rod; and then mechanically sanding and polishing the surface of the solar-grade single crystal silicon rod by polishing equipment. Due to low requirements for the concentration and the purity of the acid, the invention can use waste acid liquor for production to improve the utilization rate and decrease the cost; moreover, the erosion time does not need to be accurately controlled, and a corrosion pit phenomenon can not occur so that the rate of finished products is improved.
Description
Affiliated technical field
The present invention relates to a kind of polished finish method of solar level silicon single crystal rod.
Background technology
At present, we adopt the acid liquid corrosion method usually when the solar level silicon single crystal rod is polished, be about to the solar level silicon single crystal rod and place concentration to soak in the acid solution more than 99%, this method not only to the concentration requirement height of acid, just handle as spent acid by use back several times, the spent acid intractability is big, the feature of environmental protection is poor, and the cost height, and needs often to stir in immersion process, and need accurately grasp etching time, otherwise excessive corrosion is prone to the pit phenomenon, and the consistence of quality product is poor.
Summary of the invention
The purpose of this invention is to provide and improve the acid solution utilization ratio, and the polished finish method of the high a kind of solar level silicon single crystal rod of quality product consistence and yield rate.
The technical scheme that the present invention takes is: a kind of polished finish method of solar level silicon single crystal rod, it is characterized in that placing the lower acid solution of hydrofluoric acid matched proportion density to soak the solar level silicon single crystal rod, remove affected layer, after eliminating the stress of rod, with polissoir the mechanical grinding polishing is carried out on solar level silicon single crystal rod surface again.
The acid solution that described hydrofluoric acid matched proportion density is lower is that hydrofluoric acid and nitric acid are than being the acid solution of 1:5～8.
Adopt the present invention, since less demanding to the corrodibility of acid, therefore can use some spent acid solution productions, improved utilization ratio, reduced cost; Simultaneously, etching time does not need accurate assurance, the pit phenomenon can not occur, has improved yield rate.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
1, the solar level silicon single crystal rod is placed hydrofluoric acid and nitric acid than being the acid solution of 1:8, promptly soak 5～20 minutes in the acid solution that the hydrofluoric acid matched proportion density is lower after, remove affected layer, eliminate the stress of rod.
2, with axial polishing machine mechanical grinding polishing is carried out on solar level silicon single crystal rod surface, directly caused and be polished to till the minute surface.
Claims (2)
1, a kind of polished finish method of solar level silicon single crystal rod, it is characterized in that placing the lower acid solution of hydrofluoric acid matched proportion density to soak the solar level silicon single crystal rod, remove affected layer, behind the stress of elimination rod, with polissoir the mechanical grinding polishing is carried out on solar level silicon single crystal rod surface again.
2, the polished finish method of a kind of solar level silicon single crystal rod according to claim 1 is characterized in that the lower acid solution of hydrofluoric acid matched proportion density is that hydrofluoric acid and nitric acid are than being the acid solution of 1:5～8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100955280A CN101498055A (en) | 2009-01-19 | 2009-01-19 | Polishing treatment method for solar grade monocrystal silicon bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100955280A CN101498055A (en) | 2009-01-19 | 2009-01-19 | Polishing treatment method for solar grade monocrystal silicon bar |
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| Publication Number | Publication Date |
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| CN101498055A true CN101498055A (en) | 2009-08-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100955280A Pending CN101498055A (en) | 2009-01-19 | 2009-01-19 | Polishing treatment method for solar grade monocrystal silicon bar |
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| CN (1) | CN101498055A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102241077A (en) * | 2011-06-15 | 2011-11-16 | 安阳市凤凰光伏科技有限公司 | Method for manufacturing similar mono-crystal silicon ingot seed crystal by adopting casting process |
| CN103522149A (en) * | 2013-10-14 | 2014-01-22 | 无锡荣能半导体材料有限公司 | Polishing processing method for crystal bar |
| CN104425274A (en) * | 2013-09-03 | 2015-03-18 | 北大方正集团有限公司 | Preparation method of DMOS (Double diffusion Metal-Oxide-Semiconductor) transistor and DMOS transistor |
| CN113182971A (en) * | 2021-05-12 | 2021-07-30 | 四川雅吉芯电子科技有限公司 | High-precision edge grinding device for monocrystalline silicon epitaxial wafer |
| CN113386275A (en) * | 2021-08-18 | 2021-09-14 | 天通控股股份有限公司 | Method for slicing large-size ultrathin lithium niobate wafer |
-
2009
- 2009-01-19 CN CNA2009100955280A patent/CN101498055A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102241077A (en) * | 2011-06-15 | 2011-11-16 | 安阳市凤凰光伏科技有限公司 | Method for manufacturing similar mono-crystal silicon ingot seed crystal by adopting casting process |
| CN102241077B (en) * | 2011-06-15 | 2013-12-18 | 安阳市凤凰光伏科技有限公司 | Method for manufacturing similar mono-crystal silicon ingot seed crystal by adopting casting process |
| CN104425274A (en) * | 2013-09-03 | 2015-03-18 | 北大方正集团有限公司 | Preparation method of DMOS (Double diffusion Metal-Oxide-Semiconductor) transistor and DMOS transistor |
| CN103522149A (en) * | 2013-10-14 | 2014-01-22 | 无锡荣能半导体材料有限公司 | Polishing processing method for crystal bar |
| CN113182971A (en) * | 2021-05-12 | 2021-07-30 | 四川雅吉芯电子科技有限公司 | High-precision edge grinding device for monocrystalline silicon epitaxial wafer |
| CN113182971B (en) * | 2021-05-12 | 2022-11-25 | 四川雅吉芯电子科技有限公司 | High-precision edge grinding device for monocrystalline silicon epitaxial wafer |
| CN113386275A (en) * | 2021-08-18 | 2021-09-14 | 天通控股股份有限公司 | Method for slicing large-size ultrathin lithium niobate wafer |
| CN113386275B (en) * | 2021-08-18 | 2021-10-22 | 天通控股股份有限公司 | Method for slicing large-size ultrathin lithium niobate wafer |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090805 |