CN106733876B - A kind of cleaning method of the crystal silicon chip of Buddha's warrior attendant wire cutting - Google Patents
A kind of cleaning method of the crystal silicon chip of Buddha's warrior attendant wire cutting Download PDFInfo
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- CN106733876B CN106733876B CN201611206206.5A CN201611206206A CN106733876B CN 106733876 B CN106733876 B CN 106733876B CN 201611206206 A CN201611206206 A CN 201611206206A CN 106733876 B CN106733876 B CN 106733876B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Silicon Compounds (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The present invention relates to a kind of cleaning methods of the crystal silicon chip of Buddha's warrior attendant wire cutting, and described method includes following steps: (1) prerinse；(2) reagent cleans；(3) it rinses；(4) it dries；Along process, the treatment temperature of the method is stepped up；Drying temperature≤65 DEG C of step (4)；Each technique unit respectively includes a rinse bath；The rinse bath temperature of the first time pre-cleaning processes unit of step (1) is 30~35 DEG C low compared with drying temperature；Temperature gap≤10 DEG C of the two neighboring rinse bath；Soaking time≤210s of the crystal silicon chip in each rinse bath.The present invention selects suitable cleaning process, rinse bath temperature and soaking time, obtains the cleaning method for being suitable for the crystal silicon chip of diamond wire saw, the method can effectively clean crystal silicon chip, chipping rate is reduced simultaneously, fragment rate is reduced, reduces processing procedure loss, additionally it is possible to shorten the process time.
Description
Technical field
The invention belongs to crystalline silicon processing technique field more particularly to a kind of cleaning sides of the crystalline silicon of Buddha's warrior attendant wire cutting
Method.
Background technique
Buddha's warrior attendant wire cutting is also known as diamond wire saw cut or Buddha's warrior attendant saw blade cutting, and diamond fretsaw cutting technique, which has, to be cut
Cut rate height, the outstanding advantages such as carrying capacity of environment is small, overall cost is low；Mortar scroll saw is gradually replaced in solar silicon wafers cutting field
Cutting technique becomes prevailing technology.
The process of Buddha's warrior attendant wire cutting is: silicon ingot casting square rod being bonded on substrate by adhesive, workpiece is formed, adopts later
With workpiece described in the saw blade cutting of diamond wire is fixed with, polysilicon chip is obtained.The workpiece has structure shown in FIG. 1, tool
There is substrate 100, adhesive layer 200 is bonded in the crystal silicon chip 300 on substrate 100, each crystal silicon chip by adhesive layer 200
There is saw kerf 400 between 300, the tiny silicon powder particle after cutting is full of inside saw kerf 400.
Workpiece after Buddha's warrior attendant wire cutting first carries out degumming tech, polysilicon chip is peeled off from substrate, later by peeling
Polysilicon chip is cleaned, and the impurity such as silicon powder, the coolant liquid on its surface are removed.
But diamond wire saw cut silicon wafer especially crystal silicon chip, in inserted sheet prerinse, fragment is more, and loss is high, and vertical
It is difficult in cut direction fragment.
And the inserted sheet cleaning process of existing mortar scroll saw is used, effectively crystal silicon chip can not be separated, and be easy to make
It is improved at the fragment rate of crystal silicon chip.
Based on the above reality, the inserted sheet cleaning process that exploitation is suitable for diamond wire saw cut silicon wafer, institute are badly in need of in this field
Stating technique can be while guaranteeing cleaning effect, by crystal silicon chip fragment, and guarantees lower fragment rate.
Summary of the invention
In view of the deficiencies of the prior art, one of the objects of the present invention is to provide a kind of the clear of the crystalline silicon of Buddha's warrior attendant wire cutting
Washing method, described method includes following steps:
(1) crystal silicon chip prerinse: is subjected to pre-cleaning processes unit at least once；
(2) reagent cleans: the crystal silicon chip that step (1) is obtained carries out reagent cleaning unit at least once；
(3) rinse: the crystal silicon chip that step (2) is obtained carries out rinsing process unit at least once；
(4) it dries: the crystal silicon chip of step (3) is dried；
Along process, the treatment temperature of the method is stepped up；
Drying temperature≤65 DEG C of step (4)；
Each technique unit respectively includes a rinse bath；
The rinse bath temperature of the first time pre-cleaning processes unit of step (1) is 30~35 DEG C low compared with drying temperature, such as 31
DEG C, 32 DEG C, 33 DEG C, 34 DEG C etc.；
Temperature gap≤10 DEG C of the two neighboring rinse bath, such as 9 DEG C, 8 DEG C, 7 DEG C, 6 DEG C, 5 DEG C, 4 DEG C, 3 DEG C, 2
DEG C, 1 DEG C, 0 DEG C etc.；Described 0 DEG C means that two neighboring rinse bath does not have the temperature difference.
Soaking time≤210s of the crystal silicon chip in each rinse bath, for example, 200s, 190s, 180s, 170s,
160s, 150s, 140s, 120s etc..
Fragment rate is higher in the process of cleaning for the crystalline silicon of Buddha's warrior attendant wire cutting, using cleaning method of the present invention, sternly
Lattice control the temperature of rinse bath and the difference variation of each rinse bath, can reduce the chipping of the crystal silicon chip of Buddha's warrior attendant wire cutting
Rate improves yield rate.The temperature difference, stepping and soaking time are improper, for the crystal silicon chip of Buddha's warrior attendant wire cutting, are easy to produce more
Fragment is caused compared with lossy.
Further, since diamond fretsaw cutting technique is not needed using mortar (silicon carbide/polyethylene glycol), in cleaning process
In without removing polyethylene glycol and silicon carbide, aqueous coolant is used in cutting process, rear Wafer Cleaning is cut and is easy, to environment
It pollutes small.
Preferably, step (1 ') is carried out before step (1) by ingot casting slice inserted sheet on plug-in sheet machine, formation tool part,
Subsequent cleaning is carried out in the form of tool part.
Inference of the present invention: the cutting mechanism of diamond wire saw cut and the principle of grinding are similar, are fixed on cutting line
Diamond particles carry out silicon rod surface to plough plough, and for silicon chip surface there are two types of line is cut, one is back and forth transported by cutting line after cutting
Period caused by dynamic is the reciprocal striped of sub-mm size, and it is by line that another kind, which is cutting line of the width in micron-scale,
Diamond particles delineate what silicon face was formed.These cutting lines reduce the breaking strength of silicon wafer entirety.Make the disconnected of silicon wafer simultaneously
Resistance to spalling has anisotropy, higher in its intensity under by the power effect along cutting line direction, and when by perpendicular to cutting line
Intensity is lower when the effect of the power in direction.
Since the breaking strength of the crystal silicon chip of diamond wire saw is low, when there are power on the direction perpendicular to cutting line
When, it will cause the broken of crystal silicon chip edge, therefore using the power for being parallel to the crystal silicon chip, avoid perpendicular to crystalline silicon
It is effectively generated on the direction of piece, the fragment of crystal silicon chip can effectively be avoided to generate.
Preferably, during the ingot casting slice inserted sheet, using the cutting strain line direction for being parallel to the crystal silicon chip
Power is removed.
As an optimal technical scheme, the stripping process of the ingot casting slice includes: that ingot casting slice is placed in equipped with pure
In the peel groove of water purification, two opposite walls of the peel groove are respectively arranged with the first escape pipe and the second escape pipe, for giving
Ingot casting slice is parallel to the power in cutting strain line direction, removes crystal silicon chip；Suction hose is equipped at the top of the peel groove, for pair
Water flow causes to disturb, and lifts silicon wafer.
Preferably, step (2) reagent cleaning includes at least one base reagent cleaning process unit, such as may include one
Base reagent cleaning unit, two base reagent cleaning units or three base reagent cleaning units etc..
Alkaline cleaning unit is used for the silicon powder on cleaning silicon chip surface, greasy dirt etc..
Preferably, when step (2) reagent cleans, acid reagent cleaning is optionally first carried out before carrying out base reagent cleaning.
Acid reagent is cleaned for removing metal impurities.
Preferably, when step (2) reagent cleans, after acid reagent cleaning, water cleaning is carried out, it is clear to carry out base reagent again later
It washes.The purpose of water cleaning is to remove the acid reagent of acid reagent cleaning, to avoid the alkali examination for the base reagent cleaning for influencing subsequent progress
Agent effect.
As optimal technical scheme, step (2) reagent cleaning include sequentially connected acid reagent cleaning process unit,
One water cleaning process unit, two base reagent cleaning process units.
Preferably, acid cleaner is added in the rinse bath of the acid reagent cleaning process unit.
Preferably, the acid cleaner includes citric acid.
Preferably, the citric acid of 4.5~5.5wt% is added in the rinse bath of the acid reagent cleaning process unit.
Preferably, alkaline cleaner is added in the rinse bath of the base reagent cleaning process unit.
Preferably, the alkaline cleaner includes alkaline silicon slice detergent.
Preferably, the alkaline silicon wafer in the rinse bath of the base reagent cleaning process unit added with 4.5~5.5wt% is clear
Lotion.
The present invention is not particularly limited the alkaline cleaner, and the alkalinity that any art technology can arbitrarily obtain is clear
Lotion is used equally for the present invention, and illustratively, the alkaline cleaner includes surfactant, chelating agent, pH adjusting agent, emulsification
Agent etc. or commercially available crystal silicon chip alkaline cleaner.
The water of 12 Ω m of resistivity > is used in the technique unit of the method for the invention.12 Ω m of resistivity >
Water have ion concentration it is low, the dirty easy dispersion such as silicon powder, the low advantage of the chemical residues reactivity such as coolant liquid.
In order to guarantee that the cleaning agent of cleaning agent cleaning unit can be rinsed completely, step (3) rinsing includes 4 drifts
Wash unit.
Preferably, temperature gap≤5 DEG C of the two neighboring rinse bath.
Preferably, the cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting of the present invention includes the following steps:
Ingot casting is sliced and removes crystal silicon chip with horizontal force by (1 '), and carries out inserted sheet, obtain include crystal silicon chip tooling
Part；
(1) tool part including crystal silicon chip of step (1 ') is placed in the first washing trough equipped with pure water, at 35 DEG C
Under, carry out first time prerinse；
The tool part including crystal silicon chip of step (1) is placed in the second washing trough equipped with acid cleaner by (2a), 35
At DEG C, sour cleaning is carried out；
The tool part including crystal silicon chip of step (2a) is placed in the third washing trough equipped with pure water by (2b), at 40 DEG C
Under, carry out water cleaning；
The tool part including crystal silicon chip of step (2b) is placed in the 4th washing trough equipped with cleaning agent by (2c), at 50 DEG C
Under, carry out the cleaning of first time alkali；
The tool part including crystal silicon chip of step (2c) is placed in the 5th washing trough equipped with cleaning agent by (2d), at 50 DEG C
Under, carry out second of alkali cleaning；
The tool part including crystal silicon chip of step (2b) is placed in the 6th washing trough equipped with pure water by (3a), at 55 DEG C
Under, carry out first time rinsing；
The tool part including crystal silicon chip of step (3a) is placed in the 6th washing trough equipped with pure water by (3b), at 60 DEG C
Under, it carries out second and rinses；
The tool part including crystal silicon chip of step (3b) is placed in the 6th washing trough equipped with pure water by (3c), at 65 DEG C
Under, carry out third time rinsing；
The tool part including crystal silicon chip of step (3c) is placed in the 6th washing trough equipped with pure water by (3d), at 65 DEG C
Under, carry out the 4th rinsing；
(4) tool part including crystal silicon chip of step (3d) is set and is dried at 65 DEG C.
Preferably, the diamond wire of the sliced crystal silicon includes sand line and the diamond particles that are fixed on the sand line.
Preferably, clear in each pre-cleaning processes unit, cleaning agent cleaning unit and rinsing process unit
Washing trough is to be bubbled auxiliary cleaning, it is preferred to use ultrasonic wave added cleaning, the ultrasonic wave added of further preferred ultrasonic power 4000kW
Cleaning.
Preferably, when the rinse bath is cleaned using ultrasonic wave added, shake plate is located at bottom of rinse bath.
Preferably, water used in step (1) uses the overflow water of step (3).
Preferably, the tool part lifts the rinse bath at place after rinse bath cleans, and is transferred to next technique
The rinse bath of unit.
Compared with prior art, the invention has the following beneficial effects:
(1) present invention selects suitable cleaning process, rinse bath temperature and soaking time, obtains and is suitable for diamond wire
The cleaning method of the crystal silicon chip of cutting, the method can effectively clean crystal silicon chip, while reduce chipping rate, reduce fragmentation
Rate reduces processing procedure loss, additionally it is possible to shorten the process time.
(2) when adding specific inserted sheet technique, chipping rate can be further reduced, reduces fragment rate, reduces processing procedure
Loss.
Detailed description of the invention
The structural schematic diagram of workpiece after Fig. 1 Buddha's warrior attendant wire cutting.
Specific embodiment
Of the invention for ease of understanding, it is as follows that the present invention enumerates embodiment.Those skilled in the art are it will be clearly understood that the implementation
Example is only to aid in the understanding present invention, should not be regarded as a specific limitation of the invention.
Embodiment 1 provides a kind of cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting, includes the following steps:
Ingot casting is sliced in full-automatic inserted sheet cleaning agent by (1 '), is removed crystal silicon chip with horizontal force, and carry out inserted sheet, is obtained
To the tool part including crystal silicon chip；
(1) tool part including crystal silicon chip of step (1 ') is placed in the first washing trough equipped with pure water, carries out the
Prerinse；
The tool part including crystal silicon chip of step (1) is placed in the second washing trough equipped with acid cleaner by (2a), is carried out
Acid cleaning；The acid cleaning uses citric acid；
The tool part including crystal silicon chip of step (2a) is placed in the third washing trough equipped with pure water by (2b), carries out water
Cleaning；
The tool part including crystal silicon chip of step (2b) is placed in the 4th washing trough equipped with cleaning agent by (2c), carries out the
Alkali cleaning；The alkali cleaning reaches Losec silicon slice detergent using three；
The tool part including crystal silicon chip of step (2c) is placed in the 5th washing trough equipped with cleaning agent by (2d), carries out the
Secondary alkali cleaning；The alkali cleaning reaches Losec silicon slice detergent using three；
The tool part including crystal silicon chip of step (2b) is placed in the 6th washing trough equipped with pure water by (3a), carries out the
Primary rinsing；
The tool part including crystal silicon chip of step (3a) is placed in the 7th washing trough equipped with pure water by (3b), carries out the
Secondary rinsing；
The tool part including crystal silicon chip of step (3b) is placed in the 8th washing trough equipped with pure water by (3c), carries out the
It rinses three times；
The tool part including crystal silicon chip of step (3c) is placed in the 9th washing trough equipped with pure water by (3d), carries out the
Four rinsings；
(4) tool part including crystal silicon chip of step (3d) is set and is dried at 65 DEG C.
The cleaning of crystal silicon chip is carried out using method as described above, step (1)~(4) concrete technology condition is as follows,
The amount of developing a film is 19000~20000:
Embodiment 2 provides a kind of cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting, the difference from embodiment 1 is that:
It carries out step (3e) between step (3d) and step (4) tool part including crystal silicon chip of step (3d) is placed in equipped with pure
In tenth washing trough of water, the 5th rinsing is carried out；
The tool part including crystal silicon chip of step (3e) is set in progress step (4) later dries at 65 DEG C.
The cleaning of crystal silicon chip is carried out using method as described above, step (1)~(4) concrete technology condition is as follows,
The amount of developing a film is 19000~20000:
Embodiment 3
A kind of cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting is provided, is included the following steps:
Ingot casting is sliced in full-automatic inserted sheet cleaning agent by (1 '), is removed crystal silicon chip with horizontal force, and carry out inserted sheet, is obtained
To the tool part including crystal silicon chip；
(1) tool part including crystal silicon chip of step (1 ') is placed in the first washing trough equipped with pure water, carries out the
Prerinse；
The tool part including crystal silicon chip of step (1) is placed in the 4th washing trough equipped with cleaning agent by (2a), carries out the
Alkali cleaning；The alkali cleaning reaches Losec silicon slice detergent using three；
The tool part including crystal silicon chip of step (2a) is placed in the 6th washing trough equipped with pure water by (3a), carries out the
Primary rinsing；
The tool part including crystal silicon chip of step (3a) is placed in the 7th washing trough equipped with pure water by (3b), carries out the
Secondary rinsing；
(4) tool part including crystal silicon chip of step (3b) is set and is dried at 65 DEG C.
The cleaning of crystal silicon chip is carried out using method as described above, step (1)~(4) concrete technology condition is as follows,
The amount of developing a film is 19000~20000:
Embodiment 4
The difference from embodiment 1 is that step (1 ') uses manual removal crystal silicon chip, when removing, silicon wafer is cut surely with casting
The angle of piece heap is at 15 ° or less.
Comparative example 1
The crystalline silicon of Buddha's warrior attendant wire cutting, using the cleaning process of existing yarn sliced crystal silicon, specifically comprises the processes of:
It after Quan Bandong plug-in sheet machine inserted sheet, as unit of certain amount, is put into the feeding groove of cleaning machine, impregnates to feeding
Cleaning, parameter setting is as follows, and the amount of developing a film is 19000~20000:
Performance test:
Count B chipping, C chipping, fragment rate and processing procedure loss；
Test result is as follows table:
Wherein, theoretical the piece number=line out cuts square rod effective length/line earnestly and cuts Processing Room guide wheel cutting slot pitch；
B grades of chipping=B grades of chipping the piece number/silicon rod theories go out the piece number；
C grades of chipping=C grades of chipping the piece number/silicon rod theories go out the piece number；
Fragment rate=breakage the piece number/silicon rod theory goes out the piece number；
Processing procedure loss=1- cleaning inserted sheet number/silicon rod theory goes out the piece number；
B grades of chipping standards: chipping length≤0.8mm, wide≤0.3mm, quantity≤1/piece；
C grades of chipping standards: length≤1mm, wide≤0.5mm, quantity≤1/piece.
From the performance test results as can be seen that the present invention selects suitable cleaning process, rinse bath temperature and soaking time,
The cleaning method for being suitable for the crystal silicon chip of diamond wire saw is obtained, the method can effectively clean crystal silicon chip,
Under the premise of guaranteeing that dirty ratio meets technique requirement, while chipping rate is reduced, reduces fragment rate, reduces processing procedure loss, moreover it is possible to
Enough shorten the process time.From Examples 1 to 3 and embodiment 4 as can be seen that when adding (the horizontal force removing of specific inserted sheet technique
Crystal silicon chip) when, chipping rate can be further reduced, fragment rate is reduced, reduces processing procedure loss.
The Applicant declares that the present invention is explained by the above embodiments detailed process equipment and process flow of the invention,
But the present invention is not limited to the above detailed process equipment and process flow, that is, it is above-mentioned detailed not mean that the present invention must rely on
Process equipment and process flow could be implemented.It should be clear to those skilled in the art, any improvement in the present invention,
Addition, selection of concrete mode of equivalence replacement and auxiliary element to each raw material of product of the present invention etc., all fall within of the invention
Within protection scope and the open scope.
Claims (22)
1. a kind of cleaning method of the crystal silicon chip of Buddha's warrior attendant wire cutting, which is characterized in that described method includes following steps:
(1) crystal silicon chip prerinse: is subjected to pre-cleaning processes unit at least once；
(2) reagent cleans: the crystal silicon chip that step (1) is obtained carries out reagent cleaning unit at least once；
(3) rinse: the crystal silicon chip that step (2) is obtained carries out rinsing process unit at least once；
(4) it dries: the crystal silicon chip of step (3) is dried；
Along process, the treatment temperature of the method is stepped up；
Drying temperature≤65 DEG C of step (4)；
Each technique unit respectively includes a rinse bath；
The rinse bath temperature of the first time pre-cleaning processes unit of step (1) is 30~35 DEG C low compared with drying temperature；
Temperature gap≤10 DEG C of the two neighboring rinse bath；
Soaking time≤210s of the crystal silicon chip in each rinse bath；
The diamond wire for cutting the crystal silicon chip includes bus and the diamond particles that are fixed on the bus.
2. cleaning method as described in claim 1, which is characterized in that carry out step (1 ') before step (1)
Ingot casting slice is removed using the power for being parallel to crystal silicon chip cutting strain line direction, and inserted sheet forms work in the gaily decorated basket
Piece installing carries out subsequent cleaning in the form of tool part.
3. cleaning method as claimed in claim 2, which is characterized in that the stripping process of the ingot casting slice includes: by ingot casting
Slice is placed in the peel groove equipped with pure water, and two opposite walls of the peel groove are respectively arranged with the first escape pipe and second and go out
Tracheae, the power for being parallel to cutting strain line direction for giving ingot casting slice, removes crystal silicon chip；It is equipped at the top of the peel groove
Suction hose for causing to disturb to water flow, and lifts silicon wafer.
4. cleaning method as described in claim 1, which is characterized in that the cleaning of step (2) reagent includes at least one base reagent
Cleaning process unit.
5. cleaning method as claimed in claim 4, which is characterized in that when step (2) reagent cleans, carrying out base reagent cleaning
Acid reagent cleaning is first carried out before.
6. cleaning method as described in claim 1, which is characterized in that when step (2) reagent cleans, after acid reagent cleaning,
Water cleaning is carried out, carries out base reagent cleaning again later.
7. cleaning method as described in claim 1, which is characterized in that the cleaning of step (2) reagent includes sequentially connected one
Acid reagent cleaning process unit, a water cleaning process unit, two base reagent cleaning process units.
8. cleaning method as claimed in claim 7, which is characterized in that add in the rinse bath of the acid reagent cleaning process unit
Added with acid cleaner.
9. cleaning method as claimed in claim 8, which is characterized in that the acid cleaner includes citric acid.
10. cleaning method as claimed in claim 8, which is characterized in that in the rinse bath of the acid reagent cleaning process unit
Citric acid added with 4.5~5.5wt%.
11. cleaning method as claimed in claim 7, which is characterized in that in the rinse bath of the base reagent cleaning process unit
Added with alkaline cleaner.
12. cleaning method as claimed in claim 11, which is characterized in that the alkaline cleaner includes alkaline silicon slice detergent.
13. cleaning method as claimed in claim 11, which is characterized in that in the rinse bath of the base reagent cleaning process unit
Alkaline silicon slice detergent added with 4.5~5.5wt%.
14. cleaning method as described in claim 1, which is characterized in that use resistivity in the technique unit of the method
The water of 12 Ω m of >.
15. cleaning method as described in claim 1, which is characterized in that step (3) rinsing includes 4 rinse units；
Temperature gap≤5 DEG C of the two neighboring rinse bath.
16. cleaning method as described in claim 1, which is characterized in that described method includes following steps:
Ingot casting is sliced and removes crystal silicon chip with horizontal force by (1 '), and carries out inserted sheet, obtain include crystal silicon chip tool part；
(1) tool part including crystal silicon chip of step (1 ') is placed in the first washing trough equipped with pure water, at 35 DEG C, into
Row first time prerinse；
The tool part including crystal silicon chip of step (1) is placed in the second washing trough equipped with acid cleaner by (2a), at 35 DEG C,
Carry out sour cleaning；
The tool part including crystal silicon chip of step (2a) is placed in the third washing trough equipped with pure water by (2b), at 40 DEG C,
Carry out water cleaning；
The tool part including crystal silicon chip of step (2b) is placed in the 4th washing trough equipped with cleaning agent by (2c), at 50 DEG C,
Carry out the cleaning of first time alkali；
The tool part including crystal silicon chip of step (2c) is placed in the 5th washing trough equipped with cleaning agent by (2d), at 50 DEG C,
Carry out second of alkali cleaning；
The tool part including crystal silicon chip of step (2b) is placed in the 6th washing trough equipped with pure water by (3a), at 55 DEG C,
Carry out first time rinsing；
The tool part including crystal silicon chip of step (3a) is placed in the 6th washing trough equipped with pure water by (3b), at 60 DEG C,
Second is carried out to rinse；
The tool part including crystal silicon chip of step (3b) is placed in the 6th washing trough equipped with pure water by (3c), at 65 DEG C,
Carry out third time rinsing；
The tool part including crystal silicon chip of step (3c) is placed in the 6th washing trough equipped with pure water by (3d), at 65 DEG C,
Carry out the 4th rinsing；
(4) tool part including crystal silicon chip of step (3d) is set and is dried at 65 DEG C.
17. cleaning method as described in claim 1, which is characterized in that each pre-cleaning processes unit, cleaning agent cleaning
Rinse bath in unit and rinsing process unit is to be bubbled auxiliary cleaning.
18. cleaning method as claimed in claim 17, which is characterized in that each pre-cleaning processes unit, cleaning agent are clear
The rinse bath washed in unit and rinsing process unit is all made of ultrasonic wave added cleaning.
19. cleaning method as claimed in claim 17, which is characterized in that each pre-cleaning processes unit, cleaning agent are clear
The rinse bath washed in unit and rinsing process unit is all made of the ultrasonic wave added cleaning of ultrasonic power 4000kW.
20. cleaning method as claimed in claim 18, which is characterized in that when the rinse bath is cleaned using ultrasonic wave added,
Shake plate is located at bottom of rinse bath.
21. cleaning method as described in claim 1, which is characterized in that water used in step (1) uses the overflow water of step (3).
22. cleaning method as claimed in claim 16, which is characterized in that the tool part including crystal silicon chip is in rinse bath
After cleaning, the rinse bath at place is lifted, and is transferred to the rinse bath of next technique unit.
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| CN109604238A (en) * | 2019-01-31 | 2019-04-12 | 内蒙古通威高纯晶硅有限公司 | A kind of method for cleaning polycrystalline silicon and cleaning device |
| CN114769199A (en) * | 2022-04-22 | 2022-07-22 | 福建北电新材料科技有限公司 | Wafer cleaning method and apparatus |
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| CN102225406B (en) * | 2011-04-30 | 2013-02-13 | 常州天合光能有限公司 | Method for cleaning diamond wire-electrode cutting silicon wafer |
| CN103658096B (en) * | 2012-08-31 | 2015-10-21 | 浙江昱辉阳光能源有限公司 | A kind of cleaning method of silicon wafer cut by diamond wire |
| JP5632897B2 (en) * | 2012-11-09 | 2014-11-26 | パナソニック株式会社 | Wafer peeling apparatus and wafer peeling method |
| CN103464415B (en) * | 2013-09-13 | 2016-08-17 | 苏州协鑫光伏科技有限公司 | Solar monocrystalline silicon slice cleaning fluid and cleaning method |
| JP5982650B2 (en) * | 2013-12-06 | 2016-08-31 | パナソニックＩｐマネジメント株式会社 | Wafer peeling device |
| CN105154268A (en) * | 2015-08-29 | 2015-12-16 | 江西赛维Ldk太阳能高科技有限公司 | Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method |
| CN205442658U (en) * | 2015-12-31 | 2016-08-10 | 天津英利新能源有限公司 | Energy -concerving and environment -protective silicon material cleaning machine |
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2016
- 2016-12-23 CN CN201611206206.5A patent/CN106733876B/en active Active
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