CN103658096B - A kind of cleaning method of silicon wafer cut by diamond wire - Google Patents
A kind of cleaning method of silicon wafer cut by diamond wire Download PDFInfo
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- CN103658096B CN103658096B CN201210320133.8A CN201210320133A CN103658096B CN 103658096 B CN103658096 B CN 103658096B CN 201210320133 A CN201210320133 A CN 201210320133A CN 103658096 B CN103658096 B CN 103658096B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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Abstract
The invention discloses a kind of cleaning method of silicon wafer cut by diamond wire, comprising: prerinse is carried out to the silicon chip of well cutting; Activation cleaning agent is adopted to carry out activation cleaning to the silicon chip after prerinse; Wherein, described activation cleaning agent is the mix reagent that pure water, NaOH and hydrogen peroxide are formed.Described method effectively can remove the residual impurity such as organic matter, bacterium, reducing metal ion of silicon chip surface by the hydrogen peroxide with strong oxidizing property; And described activation cleaning agent can be made only to there is larger defect damage place with surface react by controlling the concentration of NaOH in described activation cleaning agent, remove the injury region of silicon chip surface, in the follow-up making herbs into wool process of silicon chip, silicon chip surface is identical with the contact situation of making herbs into wool reagent, namely silicon chip surface is identical with the reaction speed of making herbs into wool reagent everywhere, thus after making making herbs into wool, silicon chip has good matte.Therefore, method described in the application effectively can improve the cleanliness factor of silicon chip surface, and after silicon wafer wool making, the uniformity of matte is better.
Description
Technical field
The present invention relates to silicon wafer cleaning process technical field, more particularly, relate to a kind of cleaning method of silicon wafer cut by diamond wire.
Background technology
In today of energy growing tension, studying, tapping a new source of energy is a major subjects of current energy field.Solar energy is pollution-free with it, inexhaustible a, Main way becoming the research of current energy field, exploitation without advantages such as region restrictions.Utilizing crystal silicon solar energy battery to carry out electroluminescent is a kind of major way utilizing solar energy now.Silicon chip is crystal silicon solar energy battery carrier, is to be prepared from through cutting by crystalline silicon rod, and the conversion efficiency of quality on silicon wafer wool making and even solar cell of Wafer Cleaning effect has important impact.
In order to obtain the silicon chip of high-cleanness, high, people have developed a lot of silicon wafer cleaning, as wet-chemical cleaning, RCA standard cleaning, dry method cleaning, ultrasonic cleaning, pressure pulse cleaning, wipe method, high-pressure injection method, hydrodynamic etc.Though cleaning silicon chip method is many, be all only applicable to the silicon chip of current ordinary mortar cutting mode.But this free abrasive cutting mode length consuming time, efficiency are low, and the waste disposal difficulty after the cutting of normally used SiC and PEG mixed mortar, environmental protection pressure is large.
In order to sort this problem out, people develop the new technology of concretion abrasive batch cutting silicon wafer, namely use diamond wire cutting silicon.It adopts and substitutes the mixed mortar of SiC, PEG and common steel wire to the minimum water base cooling fluid of environmental hazard and efficient diamond wire, and cutting speed is 2-3 times of ordinary mortar cutting.As everyone knows, diamond wire cutting mode on the impact of the surface topography of silicon chip and mortar cutting mode different, as continuation Conventional cleaning methods cleans the silicon chip of diamond wire cutting, effectively can not remove the impurity of silicon chip surface, after cleaning, silicon chip surface cleanliness factor is lower, matte lack of homogeneity after silicon wafer wool making.Therefore, how effectively to remove the surface impurity of silicon wafer cut by diamond wire, problem demanding prompt solution when to improve its surface cleanliness be Wafer Cleaning.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of cleaning method of silicon wafer cut by diamond wire, the method effectively can improve the cleanliness factor of silicon chip surface, and after silicon wafer wool making, the uniformity of matte is better.
For achieving the above object, the invention provides following technical scheme:
A cleaning method for silicon wafer cut by diamond wire, described cleaning method comprises:
Prerinse is carried out to the silicon chip of well cutting;
Activation cleaning agent is adopted to carry out activation cleaning to the silicon chip after prerinse;
Wherein, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water are formed.
Preferably, in above-mentioned cleaning method, in described activation cleaning agent, the concentration of hydrogen peroxide is 2.5%Wt-9.5%Wt, and the concentration of NaOH is 0.025%Wt-0.1%Wt.
Preferably, in above-mentioned cleaning method, described activation cleaning comprises:
Silicon chip after prerinse being put into temperature is that the described activation cleaning agent of 35 DEG C-55 DEG C carries out ultrasonic cleaning 4min-5min;
Pure water ultrasonic cleaning is carried out to silicon chip.
Preferably, in above-mentioned cleaning method, described pure water cleaning comprises:
The pure water groove that silicon chip after described activation cleaning agent cleaning puts into band secondary overflow launder is carried out ultrasonic cleaning, and wherein, water temperature is 40 DEG C-50 DEG C, and scavenging period is 4min-5min, and the excess flow of pure water groove is 4L/min-12L/min.
Preferably, in above-mentioned cleaning method, described prerinse comprises:
The silicon chip be still bonded on viscose board after cutting is rinsed;
Degumming process is carried out to described silicon chip;
Being put into by silicon chip after coming unstuck and filling water temperature is that silicon chip separates by the pure water inserted slot of 20 DEG C-30 DEG C a sheet by a sheet, and it to be many pieces ofly inserted in film magazine, then the silicon chip of a box box is put into basketry;
First time pharmacy slot ultrasonic cleaning is carried out to the silicon chip putting into basketry, wherein, the oxalic acid solution of the cleaning reagent of described first time pharmacy slot ultrasonic cleaning to be concentration be 0.4%Wt-0.8%Wt, scavenging period is 4min-5min, and cleaning temperature is 40 DEG C-50 DEG C;
First time pure water ultrasonic cleaning is carried out to the silicon chip in the described basketry after first time pharmacy slot ultrasonic cleaning;
The ultrasonic cleaning of second time pharmacy slot is carried out to the silicon chip in the described basketry after first time pure water ultrasonic cleaning, wherein, the silicon chip Special cleaning agent solution of the cleaning reagent of described second time pharmacy slot ultrasonic cleaning to be concentration be 2.0%Wt-4.0%Wt, cleaning temperature is 50 DEG C-60 DEG C, and scavenging period is 4min-5min;
The ultrasonic cleaning of second time pure water is carried out to the silicon chip in the described basketry after the ultrasonic cleaning of second time pharmacy slot.
Preferably, in above-mentioned cleaning method, described flushing is: the automatic precleaning machine that the silicon chip be still bonded on viscose board after cutting is put into spray, rinsing, the ultrasonic function that hockets is cleaned 5min-10min;
Wherein, hydraulic pressure is 0.2MPa-0.3MPa, and water temperature is 20 DEG C-35 DEG C, and wash water comprises: cool back flowing water or running water or pure water.
Preferably, in above-mentioned cleaning method, described in come unstuck and comprise:
It is soak 4min-7min in the hot water of 50 DEG C-70 DEG C that the viscose board being bonded with silicon chip is immersed temperature, and the mucilage glue surface of silicon chip and viscose board is softened;
Several times silicon chip is taken off from described viscose board;
The silicon chip mucilage glue surface taken off is placed in Turnover Box upward, with scouring pad, collodion silk is wiped, remove silicon chip surface cull, when the bad erasing of collodion silk hardening by cooling on mucilage glue surface, described mucilage glue surface waters to drench temperature be wipe after the hot water of 50 DEG C-70 DEG C makes described collodion silk again softening;
Wherein, the liquid level of hot water is higher than the mucilage glue surface 8mm-15mm of silicon chip and viscose board; Spray normal-temperature water per minute 2 times-4 times, to guarantee that often opening silicon chip keeps moistening, get sheet is that 30mm-50mm is wide at every turn; Soak, spray, water pouring water and comprise: cool back flowing water or running water or pure water.
Preferably, in above-mentioned cleaning method, described first time pure water ultrasonic cleaning comprises:
Silicon chip in described basketry after the first pharmacy slot ultrasonic cleaning is put into carry potential overflow and the pure water groove that water temperature is 30 DEG C-40 DEG C carries out ultrasonic cleaning 4min-5min, during cleaning, excess flow is 2L/min-8L/min.
Preferably, in above-mentioned cleaning method, the ultrasonic cleaning of described second time pure water comprises:
Silicon chip in described basketry after the ultrasonic cleaning of second time pharmacy slot is put into carry potential overflow and the pure water groove that water temperature is 40 DEG C-50 DEG C carries out ultrasonic cleaning 4min-5min, during cleaning, spillway discharge is 2L/min-8L/min.
Preferably, in above-mentioned cleaning method, the ultrasonic power of described ultrasonic cleaning is 35KHz-45KHz, ultrasound intensity is 0.7V-1.5V.
As can be seen from technique scheme, the cleaning method of silicon wafer cut by diamond wire provided by the present invention comprises: carry out prerinse to the silicon chip of well cutting; Activation cleaning agent is adopted to carry out activation cleaning to the silicon chip after prerinse; Wherein, described activation cleaning agent is the mix reagent that pure water, NaOH and hydrogen peroxide are formed.Technical scheme described in the application effectively can remove the residual impurity such as organic matter, bacterium, reducing metal ion of silicon chip surface by the hydrogen peroxide with strong oxidizing property; And described activation cleaning agent can be made only to there is larger defect damage place with surface react by controlling the concentration of NaOH in described activation cleaning agent, remove the injury region of silicon chip surface, in the follow-up making herbs into wool process of silicon chip, silicon chip surface is identical with the contact situation of making herbs into wool reagent, namely silicon chip surface is identical with the reaction speed of making herbs into wool reagent everywhere, thus after making making herbs into wool, silicon chip has good matte.Therefore, method described in the application effectively can improve the cleanliness factor of silicon chip surface, and after silicon wafer wool making, the uniformity of matte is better.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of the cleaning method of a kind of silicon wafer cut by diamond wire provided by the present invention.
Detailed description of the invention
Just as described in the background section, existing Conventional cleaning methods cleans the silicon chip of diamond wire cutting, effectively can not remove the impurity of silicon chip surface, after cleaning, silicon chip surface cleanliness factor is lower, cause matte lack of homogeneity after silicon wafer wool making, namely the pyramid coverage rate of matte is less, thus causes electricity conversion low.
Trace it to its cause, silicon rod is after cutting, silicon wafer surface layer atom becomes dangling bonds because the chemical bond in terrace cut slice direction is destroyed, and numerous dangling bonds very easily adsorb various impurity, as particle, organic impurities, inorganic impurity, metal ion, silica flour dust etc.
Common cleaning method can only wash the partial impurities of silicon chip surface, can not remove the impurity that adhesiveness is stronger.Such as, hydrogen atom in organic matter can form stronger si-h bond with described dangling bonds, thus makes it have strong adhesiveness; Reducing metal ion can form stronger chemical bond with described dangling bonds, makes it have strong adhesiveness equally; And bacterium has stronger vitality, common cleaning can not be killed removal.The residual organic matter of silicon chip surface, reducing metal ion and bacterium can make when the follow-up making herbs into wool of silicon chip making herbs into wool reagent can not fully and silicon chip surface react, thus cause silicon chip surface making herbs into wool speed uneven, cause matte lack of homogeneity after silicon wafer wool making, finally affect the photoelectric transformation efficiency of solar cell.
Inventor studies discovery, by by hydrogen peroxide, the activation cleaning agent that NaOH and pure water are formed carries out activation cleaning to the silicon chip after diamond wire cutting, effectively can remove the residual organic matter of silicon chip surface, reducing metal ion and bacterium, namely the strong oxidizing property of hydrogen peroxide is passed through by organic matter residual for silicon chip surface and reducing metal ionic oxide formation, destroy the strong chemical bond that itself and described dangling bonds are formed, and bacterial oxidation can be killed, then, the described organic matter of character can will be changed easily again by simple pure water, reducing metal ion and bacterium fall from described Wafer Cleaning.
Based on above-mentioned research, the invention provides a kind of cleaning method of silicon wafer cut by diamond wire, the method comprises:
Prerinse is carried out to the silicon chip of well cutting;
Activation cleaning agent is adopted to carry out activation cleaning to the silicon chip after prerinse;
Wherein, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water are formed.
The present invention is after the impurity that prerinse removing silicon chip surface adhesiveness is not strong, adopt again by hydrogen peroxide, the activation cleaning agent that NaOH and pure water are formed carries out activation cleaning to the silicon chip after diamond wire cutting, effectively can remove the residual organic matter of silicon chip surface, reducing metal ion and bacterium, namely the strong oxidizing property of hydrogen peroxide is passed through by organic matter residual for silicon chip surface and reducing metal ionic oxide formation, destroy the strong chemical bond that itself and described dangling bonds are formed, and bacterial oxidation can be killed, then, the described organic matter of character can will be changed easily again by simple pure water cleaning, reducing metal ion and bacterium fall from described Wafer Cleaning.
It is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Based on above-mentioned thought, the embodiment of the present application provides a kind of cleaning method of silicon wafer cut by diamond wire, with reference to figure 1, comprising:
Step S11: silicon chip is rinsed.
The automatic precleaning machine that the silicon chip be still bonded on viscose board after cutting is put into spray, rinsing, the ultrasonic function that hockets is cleaned 5min-10min, to remove the partial impurities of described silicon chip surface, the impurity such as the silica soot that cooling fluid as water base in part and distribution cutting are caused.
Wherein, hydraulic pressure is 0.2MPa-0.3MPa, and water temperature is 20 DEG C-35 DEG C, and rinsing water quality and do not limit, can be cooling for reflux water, running water or pure water.
Step S12: described silicon chip is come unstuck.
It is soak 4min-7min in the hot water of 50 DEG C-70 DEG C that the viscose board being bonded with silicon chip is immersed temperature, and the mucilage glue surface of silicon chip and viscose board is softened.Wherein, the liquid level of hot water is higher than the mucilage glue surface 8mm-15mm of silicon chip and viscose board.
Then, point to be taken off from described viscose board by silicon chip several times continuously, to get sheet be that 30mm-50mm is wide is at every turn advisable, and avoids once taking off silicon chip and too much causes silicon chip broken.
The silicon chip mucilage glue surface taken off is placed in Turnover Box upward, with scouring pad, collodion silk is wiped, remove silicon chip surface cull, when the bad erasing of collodion silk hardening by cooling on mucilage glue surface, described mucilage glue surface waters to drench temperature be wipe after the hot water of 50 DEG C-70 DEG C makes described collodion silk again softening.
In scouring processes, the silicon chip to not taking off viscose board per minute sprays normal-temperature water 2 times-4 times, to guarantee that often opening silicon chip keeps moistening, avoids silicon chip too dry, causes the generation of Crushing Problem when getting sheet.
Wherein, described immersion, spray and water drench quality of water do not limit, can be cooling for reflux water, running water or pure water.
Described coming unstuck can also be come unstuck for thermal evaporation, namely by heating, described mucilage glue surface is evaporated to make silicon chip be separated with viscose board, this kind of mode easily produces pernicious gas when mucilage glue surface, causes environmental pollution, therefore the present embodiment preferably adopts above-mentioned immersion type degumming process.
Step S13: described silicon chip is carried out inserted sheet, framed up.
Being put into by silicon chip after coming unstuck and filling water temperature is that the silicon chip that same batch is taken off separates by the pure water inserted slot of 20 DEG C-30 DEG C a sheet by a sheet, and is inserted into many pieces of for silicon chip in film magazine, then the silicon chip of a box box is put into basketry, usual 6 box-packed one basket.
Step S14: first time pharmacy slot ultrasonic cleaning is carried out to described silicon chip.
Being put into by the basketry that silicon chip is housed and being contained with concentration is that the rinse bath of the oxalic acid solution of 0.4%Wt-0.8%Wt carries out first time pharmacy slot ultrasonic cleaning.
Wherein, scavenging period is 4min-5min, and cleaning temperature is 40 DEG C-50 DEG C.
Oxalic acid is very highly acid organic acid, has very strong complex coordination ability, can be good at some organic matters removing silicon chip surface, the finger-marks etc. introduced in some organic surface active agents, lubricant and production process in such as water base cooling fluid.And can with the part metals atom of silicon chip surface or ion generation complex reaction, and then remove above-mentioned impurity, and can well coordinate ultrasonic i.e. bubbling peeled off by the silica flour of silicon chip surface and then remove.
Step S15: first time pure water ultrasonic cleaning is carried out to described silicon chip.
Silicon chip in described basketry after the first pharmacy slot ultrasonic cleaning is put into carry potential overflow and the pure water groove that water temperature is 30 DEG C-40 DEG C carries out ultrasonic cleaning 4min-5min, during cleaning, excess flow is 2L/min-8L/min.Through simple pure water ultrasonic cleaning, the impurity and oxalic acid that depart from silicon chip surface in previous step are washed.
Step S16: the ultrasonic cleaning of second time pharmacy slot is carried out to described silicon chip.
The ultrasonic cleaning of second time pharmacy slot is carried out to the silicon chip in the described basketry after first time pure water ultrasonic cleaning, wherein, the silicon chip Special cleaning agent solution of the cleaning reagent of described second time pharmacy slot ultrasonic cleaning to be concentration be 2.0%Wt-4.0%Wt, cleaning temperature is 50 DEG C-60 DEG C, and scavenging period is 4min-5min.
Clean through peralkaline silicon slice detergent, the impurity such as the organic matter of silicon chip surface, inorganic matter and silica flour can be removed further.
Step S17: the ultrasonic cleaning of second time pure water is carried out to the silicon chip in the described basketry after the ultrasonic cleaning of second time pharmacy slot
Silicon chip in described basketry after the ultrasonic cleaning of second time pharmacy slot is put into carry potential overflow and the pure water groove that water temperature is 40 DEG C-50 DEG C carries out ultrasonic cleaning 4min-5min, during cleaning, excess flow is 2L/min-8L/min.
Through simple pure water ultrasonic cleaning, the impurity of the silicon slice detergent in previous step and disengaging silicon chip surface can be washed.
Step S18: activation cleaning is carried out to described silicon chip.
Adopt activation cleaning agent to clean the silicon chip through the ultrasonic cleaning of second time pure water, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water are formed.In described activation cleaning agent, the concentration of hydrogen peroxide is 2.5%Wt-9.5%Wt, and the concentration of NaOH is 0.025%Wt-0.1%Wt.
Concrete, described silicon chip being put into temperature is that the described activation cleaning agent of 35 DEG C-55 DEG C carries out ultrasonic cleaning 4min-5min.
Then, the pure water groove that the silicon chip after described activation cleaning agent cleaning puts into band secondary overflow launder is carried out ultrasonic cleaning, and wherein, water temperature is 40 DEG C-50 DEG C, and scavenging period is 4min-5min, and the excess flow of pure water groove is 4L/min-12L/min.The residual impurity change character and described activation cleaning agent wash.
In order to make silicon chip dry rear censorship, packaging warehouse-in as early as possible, the silicon chip cleaned can be put into the drier that temperature is 120 DEG C-130 DEG C, rotating speed is 380r/min-420r/min and drying fast.
Above-mentioned cleaning needs the replacing carrying out multiple cell body, and emphasis is picking and placeing of silicon chip, first silicon chip is inserted film magazine, then carries out cleaning progressively after film magazine being put into basketry.When changing cell body, described basketry being extracted and wants light, slow, slow, avoiding action excessively acutely to cause silicon chip broken.And when mentioning the cell body that described basketry is corresponding from oxalic acid solution, silicon slice detergent, activation cleaning agent, when described basketry leaves the liquid level of corresponding cell body, 3s-5s need be stopped, while make the described corresponding cell body of reagent backflow residual in basketry, improve utilization rate and the service life of described reagent, cleaning performance during follow-up cleaning can be increased simultaneously, and silicon chip can be made not easily to be attached together, cleaning can be improved, dry effect.
It should be noted that, the optimum embodiment of prewashed one that described step S11-step S17 is method described in the application is not unique implementation.As described in prerinse directly the silicon chip after coming unstuck can be adopted silicon slice detergent cleaning, and then carry out activation and clean, although poor relative to above-mentioned optimum embodiment cleaning performance, relative to existing traditional cleaning way, its wash result is better.
The activation cleaning agent that hydrogen peroxide, NaOH and pure water are formed carries out activation cleaning to the silicon chip after diamond wire cutting, effectively can remove the residual organic matter of silicon chip surface, reducing metal atom and ion, bacterium, namely the strong oxidizing property of hydrogen peroxide is passed through by residual for silicon chip surface organic matter, reducing metal atom and ionic oxide formation, destroy the strong chemical bond that itself and described dangling bonds are formed, and bacterial oxidation can be killed, then, can easily the above-mentioned impurity changing character be fallen from described Wafer Cleaning by simple pure water cleaning again.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a cleaning method for silicon wafer cut by diamond wire, is characterized in that, comprising:
Prerinse is carried out to the silicon chip of well cutting;
Adopting activation cleaning agent to carry out activation to the silicon chip after prerinse cleans with the residual organic matter removing silicon chip surface, reducing metal ion and bacterium;
Wherein, described activation cleaning agent is the mix reagent that hydrogen peroxide, NaOH and pure water are formed.
2. cleaning method according to claim 1, is characterized in that, in described activation cleaning agent, the concentration of hydrogen peroxide is 2.5%Wt-9.5%Wt, and the concentration of NaOH is 0.025%Wt-0.1%Wt.
3. cleaning method according to claim 2, is characterized in that, described activation cleaning comprises:
Silicon chip after prerinse being put into temperature is that the described activation cleaning agent of 35 DEG C-55 DEG C carries out ultrasonic cleaning 4min-5min;
Pure water ultrasonic cleaning is carried out to silicon chip.
4. cleaning method according to claim 3, is characterized in that, described pure water ultrasonic cleaning comprises:
The pure water groove that silicon chip after described activation cleaning agent cleaning puts into band secondary overflow launder is carried out ultrasonic cleaning, and wherein, water temperature is 40 DEG C-50 DEG C, and scavenging period is 4min-5min, and the excess flow of pure water groove is 4L/min-12L/min.
5. cleaning method according to claim 1, is characterized in that, described prerinse comprises:
The silicon chip be still bonded on viscose board after cutting is rinsed;
Degumming process is carried out to described silicon chip;
Being put into by silicon chip after coming unstuck and filling water temperature is that silicon chip separates by the pure water inserted slot of 20 DEG C-30 DEG C a sheet by a sheet, and it to be many pieces ofly inserted in film magazine, then the silicon chip of a box box is put into basketry;
First time pharmacy slot ultrasonic cleaning is carried out to the silicon chip putting into basketry, wherein, the oxalic acid solution of the cleaning reagent of described first time pharmacy slot ultrasonic cleaning to be concentration be 0.4%Wt-0.8%Wt, scavenging period is 4min-5min, and cleaning temperature is 40 DEG C-50 DEG C;
First time pure water ultrasonic cleaning is carried out to the silicon chip in the described basketry after first time pharmacy slot ultrasonic cleaning;
The ultrasonic cleaning of second time pharmacy slot is carried out to the silicon chip in the described basketry after first time pure water ultrasonic cleaning, wherein, the silicon chip Special cleaning agent solution of the cleaning reagent of described second time pharmacy slot ultrasonic cleaning to be concentration be 2.0%Wt-4.0%Wt, cleaning temperature is 50 DEG C-60 DEG C, and scavenging period is 4min-5min;
The ultrasonic cleaning of second time pure water is carried out to the silicon chip in the described basketry after the ultrasonic cleaning of second time pharmacy slot.
6. cleaning method according to claim 5, is characterized in that, described flushing is: the automatic precleaning machine that the silicon chip be still bonded on viscose board after cutting is put into spray, rinsing, the ultrasonic function that hockets is cleaned 5min-10min;
Wherein, hydraulic pressure is 0.2MPa-0.3MPa, and water temperature is 20 DEG C-35 DEG C, and wash water comprises: cool back flowing water or running water or pure water.
7. cleaning method according to claim 5, is characterized in that, described in come unstuck and comprise:
It is soak 4min-7min in the hot water of 50 DEG C-70 DEG C that the viscose board being bonded with silicon chip is immersed temperature, and the mucilage glue surface of silicon chip and viscose board is softened;
Several times silicon chip is taken off from described viscose board;
The silicon chip mucilage glue surface taken off is placed in Turnover Box upward, with scouring pad, collodion silk is wiped, remove silicon chip surface cull, when the bad erasing of collodion silk hardening by cooling on mucilage glue surface, described mucilage glue surface waters to drench temperature be wipe after the hot water of 50 DEG C-70 DEG C makes described collodion silk again softening;
Wherein, the liquid level of hot water is higher than the mucilage glue surface 8mm-15mm of silicon chip and viscose board; Spray normal-temperature water per minute 2 times-4 times, to guarantee that often opening silicon chip keeps moistening, get sheet is that 30mm-50mm is wide at every turn; Soak, spray, water pouring water and comprise: cool back flowing water or running water or pure water.
8. cleaning method according to claim 5, is characterized in that, described first time pure water ultrasonic cleaning comprises:
Silicon chip in described basketry after the first pharmacy slot ultrasonic cleaning is put into carry potential overflow and the pure water groove that water temperature is 30 DEG C-40 DEG C carries out ultrasonic cleaning 4min-5min, during cleaning, spillway discharge is 2L/min-8L/min.
9. cleaning method according to claim 5, is characterized in that, the ultrasonic cleaning of described second time pure water comprises:
Silicon chip in described basketry after the ultrasonic cleaning of second time pharmacy slot is put into carry potential overflow and the pure water groove that water temperature is 40 DEG C-50 DEG C carries out ultrasonic cleaning 4min-5min, during cleaning, spillway discharge is 2L/min-8L/min.
10. the cleaning method according to any one of claim 5-9, is characterized in that, the ultrasonic power of described ultrasonic cleaning is 35KHz-45KHz, ultrasound intensity is 0.7V-1.5V.
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| CN105655239B (en) * | 2016-03-31 | 2018-05-25 | 苏州晶樱光电科技有限公司 | Silicon wafer cleaning |
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-
2012
- 2012-08-31 CN CN201210320133.8A patent/CN103658096B/en not_active Expired - Fee Related
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