CN109365384A - A kind of high-quality silicon wafer cleaning method - Google Patents
A kind of high-quality silicon wafer cleaning method Download PDFInfo
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- CN109365384A CN109365384A CN201811378782.7A CN201811378782A CN109365384A CN 109365384 A CN109365384 A CN 109365384A CN 201811378782 A CN201811378782 A CN 201811378782A CN 109365384 A CN109365384 A CN 109365384A
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- cleaning
- silicon wafer
- medical fluid
- overflow
- ultrasonic
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 188
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 188
- 239000010703 silicon Substances 0.000 title claims abstract description 188
- 238000004140 cleaning Methods 0.000 title claims abstract description 142
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000012530 fluid Substances 0.000 claims abstract description 74
- 238000005554 pickling Methods 0.000 claims abstract description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 49
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 48
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 42
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 34
- 239000012459 cleaning agent Substances 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000002253 acid Substances 0.000 claims description 13
- 239000003599 detergent Substances 0.000 claims description 13
- 239000003814 drug Substances 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 102
- 239000012535 impurity Substances 0.000 abstract description 20
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 35
- 238000004506 ultrasonic cleaning Methods 0.000 description 16
- 238000002604 ultrasonography Methods 0.000 description 9
- 239000003513 alkali Substances 0.000 description 7
- 230000003749 cleanliness Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000007127 saponification reaction Methods 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 4
- 239000013065 commercial product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000005979 Citrus limon Nutrition 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 244000248349 Citrus limon Species 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of high-quality silicon wafer cleaning method, comprising the following steps: the cleaning of the s1: the first medical fluid；S2: overflow rinsing；The cleaning of s3: the second medical fluid；S4: pickling；S5: overflow rinsing.The beneficial effects of the invention are as follows large-sized silicon wafers cleaning is more convenient, and Wafer Cleaning is high-efficient, using prerinse, medical fluid cleaning, overflow rinsing, medical fluid cleaning, pickling and overflow cleaning, the impurity of silicon chip surface can be effectively removed, the surface cleanness of silicon wafer is improved.
Description
Technical field
The invention belongs to silicon wafer production technical fields, more particularly, to a kind of high-quality silicon wafer cleaning method.
Background technique
The direction of monocrystalline silicon piece towards large scale sheet is developed, while people want the photoelectric properties of monocrystalline silicon piece itself
Ask higher and higher.Die size is increasing, is difficult the impurity for showing silicon wafer removal under the conditions of cleaning process at present completely, shadow
Ring the incident photon-to-electron conversion efficiency of silicon wafer.
Summary of the invention
In view of the above problems, the problem to be solved in the present invention is to provide a kind of high-quality silicon wafer cleaning methods, are especially suitable for
Large-sized silicon wafers use when cleaning, and are cleaned using cleaning agent and lye to silicon wafer, and carry out pickling, promote the surface of silicon wafer
Cleanliness provides the cleaning efficiency of silicon wafer.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of high-quality silicon wafer cleaning method, including
Following steps:
The cleaning of s1: the first medical fluid；
S2: overflow rinsing；
The cleaning of s3: the second medical fluid；
S4: pickling；
S5: overflow rinsing.
Further, s1 step the first medical fluid cleaning the following steps are included:
S11: it is cleaned by ultrasonic using cleaning medical fluid solution；
S12: it is cleaned by ultrasonic using detergent solution.
Further, the cleaning medical fluid solution in step s11 includes cleaning agent and lye, and the mass fraction of cleaning agent is
1%-3%.
Further, lye is the sodium hydroxide that mass fraction is 2%-3%.
Further, detergent solution is the cleaning agent that mass fraction is 1%-3%.
Further, for the cleaning of the second medical fluid of step s3 to carry out pressure pulse cleaning using the second medical fluid, the second medical fluid includes double
Oxygen water and potassium hydroxide, the mass fraction of hydrogen peroxide are 20%-40%, and the mass fraction of potassium hydroxide is 35%-55%.
Further, the solubility of hydrogen peroxide is 5.5vol%-6.0vol%, and the concentration of potassium hydroxide is 1.0vol%-
1.5vol%.
Further, pickling is to be cleaned by ultrasonic using acid solution in step s4, and acid solution is citric acid.
Further, the mass fraction of citric acid is 3%-4%.
Further, to carry out repeated ultrasonic overflow cleaning using pure water, number is at least the overflow rinsing in step s5
Three times.
The advantages and positive effects of the present invention are:
1. due to the adoption of the above technical scheme, so that large-sized silicon wafers cleaning is more convenient, and Wafer Cleaning efficiency
Height is cleaned using prerinse, medical fluid cleaning, overflow rinsing, medical fluid cleaning, pickling and overflow, can effectively remove silicon chip surface
Impurity, improve the surface cleanness of silicon wafer；
2., using the sodium hydroxide of cleaning agent and 2%-3%, reinforce the saponification of alkali in the cleaning of first time medical fluid,
Promote silicon chip surface cleanliness；
3. when second medical fluid cleans, using concentration for the hydrogen peroxide of 5.5%-6.0% and concentration is 1.0vol%-
The potassium hydroxide of 1.5vol% increases the removal ability to organic matter, and forms protective film in silicon chip surface, improves the clear of silicon wafer
Cleanliness, and the surface of silicon wafer is protected；
4. carrying out pickling after medical fluid cleaning twice, the alkali of silicon chip surface is neutralized, the gold of silicon chip surface can be effectively removed
Belong to ion residues；
5. carrying out Wafer Cleaning using the cleaning method, silicon chip surface is clean, at the same silicon sheet surface metal ion residual compared with
It is few, silicon chip surface cleanliness is improved, the incident photon-to-electron conversion efficiency of cell piece is improved, meanwhile, improve the yield rate of cell piece and reliable
Rate, suede structure makes incident light in silicon chip surface multiple reflections and refraction after silicon wafer wool making, increases the absorption of light, reduces
Reflectivity helps to improve the performance of battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of the invention；
Specific embodiment
The present invention is described further in the following with reference to the drawings and specific embodiments.
Fig. 1 shows the structure of one embodiment of the invention, the present embodiment be related to a kind of high-quality silicon chip cleaning system and
Cleaning method can effectively remove the impurity of silicon chip surface for the cleaning to large-sized silicon wafers, improve the cleaning of silicon chip surface
Degree, improves the incident photon-to-electron conversion efficiency of cell piece.
Above-mentioned high-quality silicon chip cleaning system, required system and device when for large-sized silicon wafers cleaning, to silicon wafer into
Row cleaning, the high-quality silicon chip cleaning system, including prerinse portion, the first medical fluid cleaning part, the first overflow cleaning part, the second medicine
Liquid cleaning part, pickling portion, the second overflow cleaning part and slow pulling part, prerinse portion are used to carry out prerinse to silicon wafer；First medicine
Liquid cleaning part cleans the silicon wafer after prerinse using medical fluid, removes the impurity of silicon chip surface；First overflow cleaning part pair
Silicon wafer carries out ultrasonic overflow cleaning, and the medical fluid of silicon chip surface is cleaned up；Second medical fluid cleaning part using medical fluid to silicon wafer into
Row cleaning, further removes the impurity of silicon chip surface；Silicon wafer cleans using acid solution in pickling portion, removes silicon chip surface
Impurity, meanwhile, neutralize the medical fluid of silicon chip surface；Second overflow cleaning part, cleans silicon wafer, removes the acid of silicon chip surface
Solution；The silicon wafer cleaned up is promoted, removes the moisture of silicon chip surface by slow pulling part；Above-mentioned prerinse portion, the first medical fluid are clear
It washes portion, the first overflow cleaning part, the second medical fluid cleaning part, pickling portion, the second overflow cleaning part and slow pulling part to set gradually, silicon
Piece is cleaned since prerinse portion, successively carries out prerinse, medical fluid cleaning, overflow cleaning, medical fluid cleaning, pickling, overflow
Cleaning and slow lifting, the impurity of silicon chip surface is cleaned up, meanwhile, when removing the cutting of silicon chip surface caused by stress damage
Wound, improves the surface cleanness of silicon wafer, improves the photoelectric conversion ability of silicon wafer.Connected between each cleaning part by mobile grabbing device
Logical, mobile grabbing device is used for the crawl movement to silicon wafer, completes silicon wafer in the movement of cleaning process, and then realize the clear of silicon wafer
It washes.
Specifically, above-mentioned prerinse portion includes feeding portion and cleaning part, and feeding portion and cleaning part are set gradually, feeding portion
For the feeding of silicon wafer, cleaning part is used to carry out silicon wafer prerinse, and feeding portion and cleaning part carry out ultrasonic overflow to silicon wafer
Cleaning, here, feeding portion are feeding groove, are provided with pure water in feeding groove, carry out pure water cleaning to the silicon wafer entered in feeding groove,
The biggish granule foreign of preliminary removal silicon chip surface, and the feeding groove has ultrasonic overflow, it is clear to carry out ultrasonic overflow to silicon wafer
It washes, ultrasonic cleaning can effectively remove the biggish granule foreign of silicon chip surface, and overflow cleaning is able to maintain pure water in feeding groove
Cleanliness, convenient for the cleaning to silicon wafer；Cleaning part is rinse bath, i.e. 1 slot, is provided with pure water in 1 slot, using overflow manner,
And there are ultrasound functions, ultrasonic overflow cleaning is carried out to the silicon wafer entered in 1 slot, the particle for removing silicon chip surface is biggish miscellaneous
Matter, silicon wafer are entered in 1 slot after coming out from feeding groove, are cleaned, the prerinse of silicon wafer is realized with this.
The first above-mentioned medical fluid cleaning part includes that the first ultrasonic cleaning medical fluid portion, the second ultrasonic cleaning medical fluid portion and ultrasound are clear
Portion is washed, the first ultrasonic cleaning medical fluid portion, the second ultrasonic cleaning medical fluid portion and ultrasonic cleaning portion are set gradually, the first ultrasonic cleaning medicine
Liquid portion with second ultrasonic cleaning medical fluid portion be equipped with cleaning medical fluid solution, ultrasonic cleaning portion be equipped with detergent solution, to silicon wafer into
Row cleans three times, preceding to be cleaned by ultrasonic twice using cleaning medical fluid solution to silicon wafer, for the third time using detergent solution to silicon
Piece is cleaned.Specifically, the silicon wafer after prerinse enters the first ultrasonic cleaning medical fluid portion, using cleaning medical fluid solution pair
Silicon wafer is cleaned by ultrasonic, and subsequently into the second ultrasonic cleaning medical fluid portion, is surpassed again using cleaning medical fluid solution to silicon wafer
Sound cleaning, is entered ultrasonic cleaning portion later, is cleaned by ultrasonic using detergent solution to silicon wafer.This, the first ultrasonic cleaning medicine
Liquid portion is rinse bath, i.e. 2 slots, 2 slots, which are provided with, cleans medical fluid solution, and the second ultrasonic cleaning medical fluid portion is rinse bath, i.e. 3 slots, 3 slots
It is provided with cleaning medical fluid solution, ultrasonic cleaning portion is rinse bath, i.e. 4 slots, 4 slots are provided with detergent solution；Here medical fluid is cleaned
Solution includes the cleaning agent that mass fraction is 1%-3% and the sodium hydroxide of 2%-3%, and detergent solution is the clear of 1%-3%
Lotion, cleaning agent are aqueous cleaning agent, are commercial product, are selected according to actual needs, and cleaning agent is for removing silicon wafer table
The impurity such as the greasy dirt in face, sodium hydroxide aqueous slkali reinforce the saponification of the alkali in cleaning agent, improve the cleaning of silicon chip surface
Degree.It is separate that sodium hydroxide is added in cleaning agent are as follows:
Si+2NaOH+H20=Na2SiO3+2H2
Hydrophilic surface is formed in silicon face, passes through the physics chemical actions cleaning such as chelating, complexing, removing convenient for cleaning agent
The contamination of silicon chip surface prevents the pollutant being removed from adsorbing again to silicon chip surface.This requires between silicon chip surface and particle
Z potential polarity having the same, both make the presence of the effect to repel each other, in alkaline solution, silicon chip surface and most particles
Son is existed with negative Z potential, is conducive to remove particle.
The first above-mentioned overflow cleaning part carries out ultrasonic overflow cleaning to silicon wafer, removes the cleaning agent and alkali of silicon chip surface
Liquid.Here, the first overflow cleaning part is rinse bath, i.e. 5 slots, 5 slots are provided with pure water, and have ultrasound functions, using overflow side
Formula is cleaned by ultrasonic silicon wafer, removes the cleaning agent and lye of silicon chip surface, and overflow manner guarantees the cleaning of pure water in 5 slots
Degree, convenient for removing the cleaning agent and lye of silicon chip surface.
The second above-mentioned medical fluid cleaning part includes pressure pulse cleaning portion, which is rinse bath, i.e. 6 slots, 6 slots are built-in
There is the second medical fluid, and have the function of to be bubbled, the second medical fluid is hydrogen peroxide and potassium hydroxide solution, hydrogen peroxide and potassium hydroxide solution
Secondary medical fluid cleaning is carried out to silicon wafer, while pressure pulse cleaning is carried out to silicon wafer, hydrogen peroxide and potassium hydroxide solution include quality point
The potassium hydroxide that the hydrogen peroxide and mass fraction that number is 20%-40% are 35%-55%, wherein the solubility of hydrogen peroxide is
5.5vol%-6.0vol%, the concentration of potassium hydroxide are 1.0vol%-1.5vol%, and hydrogen peroxide has oxidisability, can be effective
The organic matter of silicon wafer is removed, and forms protective film in silicon chip surface, the cleannes of silicon chip surface is protected, reduces impurity in silicon wafer
The attachment on surface；Potassium hydroxide reinforces the saponification of hydrogen peroxide, promotes the cleannes of silicon chip surface, and can effectively remove silicon
The mechanical stress on piece surface is damaged, and is reduced the residual of the metal ion of silicon chip surface, is improved smoothness and the cleaning of silicon chip surface
Degree.
Above-mentioned pickling portion includes ultrasonic pickling portion, which is rinse bath, i.e. 7 slots, it is molten that 7 slots are provided with acid
Liquid, in the aqueous slkali of silicon chip surface when for neutralizing the second medical fluid cleaning part cleaning silicon chip, and have ultrasound functions, to silicon wafer into
Row ultrasonic cleaning, the acid solution are citric acid, and the mass fraction of citric acid is 3%-4%.Citric acid is a kind of organic monoacid, nothing
It is smelly, there is very strong tart flavour, it is soluble easily in water.According to the property of citric acid, citric acid is added in 7 slots to generate dirt to silicon wafer
Dye, and the antioxidant properties of citric acid will play a protective role to silicon chip surface, prevent pollution and the oxidation of remaining substance, lemon
Lemon acid can combine rapidly and precipitate metal ion, and enables to ash content and soil dispersion, suspension, improves the surface of silicon wafer
Cleannes.
The second above-mentioned overflow cleaning part includes the first ultrasonic overflow part, the second ultrasonic overflow part and third ultrasound overflow
Portion, the first ultrasonic overflow part, the second ultrasonic overflow part and third ultrasound overflow part set gradually, successively carry out to silicon wafer ultrasonic clear
It washes, here, the first super clear overflow part is rinse bath, i.e. 8 slots, and the second ultrasonic overflow part is rinse bath, i.e. 9 slots, and third ultrasound is overflow
Stream portion is rinse bath, i.e. 10 slots, 8 slots, 9 slots and 10 slots all have ultrasound functions, and pure water is respectively arranged in slot, are all made of overflow side
Formula successively carries out ultrasonic overflow cleaning to silicon wafer, removes the acid solution of silicon chip surface, improve the cleannes of silicon chip surface.
Above-mentioned slow pulling part is used to lift silicon wafer, draws the moisture of dry silicon chip surface, including lift slot slowly, i.e., and 11
Slot, 11 slot are provided with pure water, using overflow manner, rinse to silicon wafer, and by mobile grabbing device by silicon wafer slowly
It is promoted, blows during lifting to silicon wafer, reduce the moisture of silicon chip surface.
Using above-mentioned high-quality silicon chip cleaning system, silicon wafer is cleaned, cleaning method is as follows:
A kind of high-quality silicon wafer cleaning method, comprising the following steps:
Prerinse: being cleaned multiple times silicon wafer using pure water in prerinse portion, and it is clear to carry out pure water ultrasound twice here
It washes, feeding is carried out to silicon wafer in feeding groove, and carry out ultrasonic overflow cleaning, after coming out out of feeding groove, silicon wafer enters 1 slot
It is interior, ultrasonic overflow cleaning is carried out using pure water, removes the biggish impurity of particle of silicon chip surface；
The cleaning of first medical fluid: silicon wafer is cleaned by ultrasonic using cleaning medical fluid solution first, is packed into 2 slots and 3 slots
Medical fluid cleaning solution, silicon wafer are put into 2 slots, are cleaned by ultrasonic to silicon wafer, and 2 slots use self-circulation mode here, so that cleaning
Medical fluid solution can be recycled, and remove the impurity such as the greasy dirt of silicon chip surface, improve the cleannes of silicon chip surface；Silicon wafer is from 2 slots
After out, into 3 slots, it is cleaned by ultrasonic again, 3 slots equally use self-circulation mode, and cleaning medical fluid solution is followed
Ring uses, and silicon wafer is cleaned by ultrasonic after entering 3 slots, further removes the impurity of silicon chip surface；Here, cleaning medical fluid includes clear
The mass fraction of lotion and lye, cleaning agent is 1%-3%, and lye is the sodium hydroxide that mass fraction is 2%-3%, hydroxide
Sodium reinforces the saponification of the alkali in cleaning agent, removes the impurity and mechanical damage of silicon chip surface, promotes the cleaning of silicon chip surface
Degree, cleaning agent is aqueous cleaning agent, is commercial product, is selected according to actual needs；
Again, be cleaned by ultrasonic using detergent solution: silicon wafer enters 4 slots after coming out from 3 slots, and 4 slots are provided with cleaning
Agent solution is cleaned by ultrasonic, and the impurity of silicon chip surface is further removed, and here, detergent solution uses self-circulation mode, is mentioned
The utilization rate of high detergent solution, detergent solution include cleaning agent, and cleaning agent is aqueous cleaning agent, are commercial product, according to
Actual demand is selected, and the mass fraction of cleaning agent is 1%-3%, is further cleaned to silicon wafer, is removed the miscellaneous of silicon chip surface
Matter improves the cleannes of silicon wafer.
Overflow rinsing: after the cleaning of the first medical fluid, carrying out overflow cleaning, and silicon wafer enters in 5 slots, and 5 slots are provided with pure water,
Pure water uses overflow manner, carries out ultrasonic overflow cleaning to silicon wafer, removes the cleaning agent and sodium hydroxide lye of silicon chip surface, mention
The cleannes of high silicon chip surface.
The cleaning of second medical fluid: silicon wafer is carried out the second medical fluid cleaning, is bubbled using the second medical fluid after overflow rinses
Cleaning further removes the impurity and mechanical damage of silicon chip surface, in 6 slots, is packed into the second medical fluid, be bubbled to silicon wafer clear
It washes, the second medical fluid includes hydrogen peroxide and potassium hydroxide, and the mass fraction of hydrogen peroxide is 20%-40%, the quality point of potassium hydroxide
Number is 35%-55%, and the solubility of hydrogen peroxide is 5.5vol%-6.0vol%, and the concentration of potassium hydroxide is 1.0vol%-
1.5vol%, hydrogen peroxide increases the removal ability to organic matter, and forms protective film in silicon chip surface, and potassium hydroxide removes silicon wafer
The impurity and mechanical damage on surface, reduce the attachment of impurities on surface of silicon chip, improve the cleannes of silicon wafer.
Pickling: silicon wafer settle washing, acid solution is packed into 7 slots, using acid after the cleaning of the second medical fluid to silicon wafer
Solution is cleaned by ultrasonic silicon wafer, which is citric acid, and the mass fraction of citric acid is 3%-4%, and citric acid resists
Oxidizing property will play a protective role to silicon chip surface, prevent pollution and the oxidation of remaining substance, and citric acid can be tied rapidly
Conjunction and precipitate metal ion, so that ash content and soil dispersion, suspension, and silicon chip surface when second of medical fluid cleans can be neutralized
Potassium hydroxide solution improves the cleannes of silicon chip surface.
Overflow rinsing: carrying out repeated ultrasonic overflow cleaning using pure water, and number is at least three times, here preferably three times,
It is packed into pure water in 8 slots, 9 slots and 10 slots, using overflow manner, the silicon wafer through overpickling sequentially enters 8 slots, 9 slots and 10 slots,
Ultrasonic overflow cleaning is carried out to silicon wafer, the acid solution and impurity of silicon chip surface is removed, improves the cleannes of silicon chip surface.
Slow lifting: being packed into pure water in 11 slots, using overflow manner, carries out pure water overflow cleaning to silicon wafer, after cleaning, into
Row slow lifting upwards, and blow to silicon wafer, the moisture of silicon chip surface is removed, Wafer Cleaning is completed, silicon wafer enters subsequent processing.
The advantages and positive effects of the present invention are: due to the adoption of the above technical scheme, so that large-sized silicon wafers clean
It is more convenient, and Wafer Cleaning is high-efficient, using prerinse, medical fluid cleaning, overflow rinsing, medical fluid cleaning, pickling and overflows
Stream cleaning, can effectively remove the impurity of silicon chip surface, improve the surface cleanness of silicon wafer；In the cleaning of first time medical fluid, adopt
With the sodium hydroxide of cleaning agent and 2%-3%, reinforce the saponification of alkali, promotes silicon chip surface cleanliness；In second of medical fluid
When cleaning, the potassium hydroxide that concentration is 1.0vol%-1.5vol% for the hydrogen peroxide of 5.5%-6.0% and concentration is used, is increased
Protective film is formed to the removal ability of organic matter, and in silicon chip surface, improves the cleannes of silicon wafer, and carry out to the surface of silicon wafer
Protection；Pickling is carried out after medical fluid cleaning twice, the alkali of silicon chip surface is neutralized, can effectively remove the metal ion of silicon chip surface
Residual；Wafer Cleaning is carried out using the cleaning method, silicon chip surface is clean, while silicon sheet surface metal ion residual is less, mentions
High silicon chip surface cleanliness improves the incident photon-to-electron conversion efficiency of cell piece, meanwhile, improve the yield rate and reliability of cell piece, silicon
Suede structure makes incident light in silicon chip surface multiple reflections and refraction after piece making herbs into wool, increases the absorption of light, reduces reflection
Rate helps to improve the performance of battery.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (10)
1. a kind of high-quality silicon wafer cleaning method, it is characterised in that: the following steps are included:
The cleaning of s1: the first medical fluid；
S2: overflow rinsing；
The cleaning of s3: the second medical fluid；
S4: pickling；
S5: overflow rinsing.
2. high-quality silicon wafer cleaning method according to claim 1, it is characterised in that: the s1 step the first medical fluid cleaning
The following steps are included:
S11: it is cleaned by ultrasonic using cleaning medical fluid solution；
S12: it is cleaned by ultrasonic using detergent solution.
3. high-quality silicon wafer cleaning method according to claim 2, it is characterised in that: the cleaning medicine in the step s11
Liquor includes cleaning agent and lye, and the mass fraction of the cleaning agent is 1%-3%.
4. high-quality silicon wafer cleaning method according to claim 3, it is characterised in that: the lye is that mass fraction is
The sodium hydroxide of 2%-3%.
5. high-quality silicon wafer cleaning method according to claim 4, it is characterised in that: the detergent solution is quality point
Number is the cleaning agent of 1%-3%.
6. high-quality silicon wafer cleaning method according to claim 1-5, it is characterised in that: the step s3 second
To carry out pressure pulse cleaning using the second medical fluid, second medical fluid includes hydrogen peroxide and potassium hydroxide, the dioxygen for medical fluid cleaning
The mass fraction of water is 20%-40%, and the mass fraction of the potassium hydroxide is 35%-55%.
7. high-quality silicon wafer cleaning method according to claim 6, it is characterised in that: the solubility of the hydrogen peroxide is
5.5vol%-6.0vol%, the concentration of the potassium hydroxide are 1.0vol%-1.5vol%.
8. according to claim 1-4,7 described in any item high-quality silicon wafer cleaning methods, it is characterised in that: in the step s4
Pickling is to be cleaned by ultrasonic using acid solution, and the acid solution is citric acid.
9. high-quality silicon wafer cleaning method according to claim 8, it is characterised in that: the mass fraction of the citric acid is
3%-4%.
10. high-quality silicon wafer cleaning method according to claim 9, it is characterised in that: the overflow drift in the step s5
It washes to carry out repeated ultrasonic overflow cleaning using pure water, the number is at least three times.
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