CN110665893B - Method for cleaning oversized monocrystalline silicon wafer - Google Patents
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- CN110665893B CN110665893B CN201910942021.8A CN201910942021A CN110665893B CN 110665893 B CN110665893 B CN 110665893B CN 201910942021 A CN201910942021 A CN 201910942021A CN 110665893 B CN110665893 B CN 110665893B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
The invention provides a method for cleaning an oversized monocrystalline silicon wafer, which comprises the following steps of sequentially cleaning the silicon wafer: s1: cleaning with first liquid medicine; s2: overflow cleaning; s3: cleaning with the second liquid medicine; s4: cleaning with the third liquid medicine; s5: overflow cleaning; s6: slowly pulling, and spraying in the slow pulling process. The method has the beneficial effects that the first liquid medicine cleaning, the second liquid medicine cleaning and the third liquid medicine cleaning are sequentially carried out on the silicon wafer, the surface cleanliness of the silicon wafer is high after the silicon wafer is cleaned, metal ions on the surface of the silicon wafer are less in residue, the surface cleanliness of the silicon wafer is improved, and the conversion efficiency of subsequent battery pieces is improved.
Description
Technical Field
The invention belongs to the technical field of photovoltaics, and particularly relates to a method for cleaning an oversized monocrystalline silicon wafer.
Background
At present, the processing of the silicon wafer with the super-large size becomes the subsequent development trend of photovoltaic. However, when the silicon wafer size becomes large, particularly when the silicon wafer having a diameter of larger than 270mm is cleaned, the proportion of the dirty wafer increases according to the conventional cleaning method. Although the cleaning time is prolonged, the amount of chemicals (cleaning agent, chemical) is increased, and the overflow amount is increased, the cost is increased.
Disclosure of Invention
In view of the above problems, the present invention provides a method for cleaning an oversized single crystal silicon wafer, wherein the method comprises the steps of cleaning the oversized single crystal silicon wafer, sequentially performing a first chemical cleaning, a second chemical cleaning and a third chemical cleaning on the silicon wafer, so that the cleanliness of the surface of the silicon wafer is high, the metal ions on the surface of the silicon wafer are less remained, and the conversion efficiency of the subsequent battery piece is improved.
In order to solve the technical problems, the invention adopts the technical scheme that: a method for cleaning an oversized monocrystalline silicon wafer comprises the following steps of sequentially cleaning the silicon wafer:
s1: cleaning with first liquid medicine;
s2: overflow cleaning;
s3: cleaning with the second liquid medicine;
s4: cleaning with the third liquid medicine;
s5: overflow cleaning;
s6: slowly pulling, and spraying in the slow pulling process.
Further, in step S3, the bubble cleaning is performed using a second chemical, which is a high-concentration cleaning chemical solution.
Further, the high-concentration cleaning liquid medicine solution is hydrogen peroxide and potassium hydroxide solution, wherein,
the mass fraction of the hydrogen peroxide is 20-40%, and the mass fraction of the potassium hydroxide is 30-50%;
the concentration of the hydrogen peroxide is 4.5vol% -5.5vol%, and the concentration of the potassium hydroxide is 1.0vol% -1.5 vol%.
Further, in step S4, the bubble cleaning is performed using a third chemical, which is a low-concentration cleaning chemical solution.
Further, the low-concentration cleaning liquid medicine solution is hydrogen peroxide and potassium hydroxide solution, wherein,
the mass fraction of the hydrogen peroxide is 20-40%, and the mass fraction of the potassium hydroxide is 30-50%;
the concentration of the hydrogen peroxide is 1.5vol% -1.8vol%, and the concentration of the potassium hydroxide is 0.3vol% -0.5 vol%.
Further, in step S6, hot pure water is sprayed, and the temperature of the hot pure water is 50 ℃ to 70 ℃.
Further, in step S6, slow pulling is performed using a slow pulling portion, the slow pulling portion is provided obliquely, and pure water is provided in the slow pulling portion.
Furthermore, the inclination angle of the slow lifting part is 5-15 degrees.
Further, in step S1, the ultrasonic cleaning is performed with the first liquid medicine, and the first liquid medicine cleaning is performed at least two times, wherein,
the first liquid medicine is a cleaning agent solution, and the cleaning agent solution is 3% -5% of a cleaning agent.
Further, pre-cleaning is performed before step S1, and the pre-cleaning is performed by ultrasonic flood cleaning using pure water.
By adopting the technical scheme, the silicon wafer is sequentially subjected to the first liquid medicine cleaning, the second liquid medicine cleaning and the third liquid medicine cleaning, after the silicon wafer is cleaned, the surface cleanliness of the silicon wafer is high, and meanwhile, metal ions on the surface of the silicon wafer are less in residue, so that the surface cleanliness of the silicon wafer is improved, and the conversion efficiency of subsequent cells is improved; the silicon wafer surface is clean, the yield and the reliability of the battery piece can be improved, the texture structure enables incident light to be reflected and refracted on the silicon wafer surface for multiple times after the silicon wafer is textured, the light absorption is increased, the reflectivity is reduced, and the performance of the battery is improved.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Fig. 1 shows a schematic structural diagram of an embodiment of the present invention, specifically shows a structure of the embodiment, and the embodiment relates to a cleaning system for an oversized single crystal silicon wafer, which is used for cleaning the oversized single crystal silicon wafer, and the silicon wafer is cleaned by using a three-time liquid medicine solution, so that the surface of the silicon wafer is clean, metal ion residues on the surface of the silicon wafer are few, the conversion efficiency of subsequent battery pieces is improved, the yield and the reliability of the battery pieces are improved, and the performance of the battery is improved.
A cleaning system for an oversized silicon wafer is a system device required by cleaning the oversized silicon wafer and is used for cleaning the silicon wafer. The cleaning system for the oversized monocrystalline silicon wafer comprises a pre-cleaning part, a slow pulling part, a first liquid medicine cleaning part, a first overflow cleaning part, a second liquid medicine cleaning part, a third liquid medicine cleaning part and a second overflow cleaning part, wherein the pre-cleaning part, the first liquid medicine cleaning part, the first overflow cleaning part, the second liquid medicine cleaning part, the third liquid medicine cleaning part, the second overflow cleaning part and the slow pulling part are sequentially arranged and are communicated through a movable grabbing device to sequentially clean the silicon wafer; the first liquid medicine cleaning part adopts liquid medicine to clean the silicon wafer after the pre-cleaning, and impurities on the surface of the silicon wafer are removed; the first overflow cleaning part carries out ultrasonic overflow cleaning on the silicon wafer to clean the liquid medicine on the surface of the silicon wafer; the second liquid medicine cleaning part is used for cleaning the silicon wafer by adopting liquid medicine, and further removing impurities on the surface of the silicon wafer; the third liquid medicine cleaning part further cleans the silicon wafer by adopting liquid medicine, so that the removal capacity of organic matters is increased, and a layer of protective film is formed on the surface of the silicon wafer; a second overflow cleaning part for cleaning the silicon wafer and removing the acid solution on the surface of the silicon wafer; the slow pulling part is used for lifting the cleaned silicon wafer and removing the moisture on the surface of the silicon wafer, and the slow pulling part is obliquely arranged at a certain inclination angle, so that the moisture on the surface of the silicon wafer is pulled dry and the wafer sticking is avoided.
The pre-cleaning part, the first liquid medicine cleaning part, the first overflow cleaning part, the second liquid medicine cleaning part, the third liquid medicine cleaning part, the second overflow cleaning part and the slow lifting part are sequentially arranged, the silicon wafer is cleaned from the pre-cleaning part, the pre-cleaning, the first liquid medicine cleaning, the overflow cleaning, the second liquid medicine cleaning, the third liquid medicine cleaning, the overflow cleaning and the slow lifting are sequentially carried out, impurities on the surface of the silicon wafer are cleaned, meanwhile, metal ion residues on the surface of the silicon wafer are removed, the surface cleanliness of the silicon wafer is improved, and the conversion efficiency of subsequent cells is improved.
The cleaning parts are communicated through the movable grabbing device, and the movable grabbing device is used for grabbing and moving the silicon wafer to complete the movement of the silicon wafer in the cleaning process, so that the silicon wafer is cleaned.
The pre-cleaning part is a cleaning tank, namely 1 tank, pure water is filled in the cleaning tank (1 tank), an overflow mode is adopted, an ultrasonic function is realized, the silicon wafer entering the cleaning tank is subjected to ultrasonic overflow cleaning, impurities with large particles on the surface of the silicon wafer are removed, and after the silicon wafer is degummed, the silicon wafer enters the cleaning tank for cleaning, so that the silicon wafer is pre-cleaned. The ultrasonic cleaning can effectively remove larger particle impurities on the surface of the silicon wafer, and the overflow cleaning can keep the cleanliness of pure water in the feeding groove.
First liquid medicine cleaning part includes first supersound liquid medicine cleaning part and second supersound liquid medicine cleaning part, and first supersound liquid medicine cleaning part sets gradually with second supersound liquid medicine cleaning part, and first supersound liquid medicine cleaning part all is equipped with cleaner solution with second supersound liquid medicine cleaning part, washs twice to the silicon chip, and the twice washing of silicon chip all adopts cleaner solution to carry out ultrasonic cleaning to the silicon chip. Specifically, the silicon wafer after pre-cleaning enters a first ultrasonic liquid medicine cleaning part, a cleaning agent solution is adopted to perform ultrasonic cleaning on the silicon wafer, then the silicon wafer enters a second ultrasonic liquid medicine cleaning part, the cleaning agent solution is adopted to perform ultrasonic cleaning on the silicon wafer, and the silicon wafer is cleaned twice. Here, the first ultrasonic liquid medicine cleaning part is a cleaning tank, i.e., 2 tanks, a cleaning agent solution is filled in the cleaning tank (2 tanks), the second ultrasonic liquid medicine cleaning part is a cleaning tank, i.e., 3 tanks, a cleaning agent solution is filled in the cleaning tank (3 tanks); the cleaning agent solution is 3% -5% of cleaning agent, the cleaning agent is water-based cleaning agent and is a commercially available product, the cleaning agent is selected according to actual requirements, the cleaning agent is used for removing impurities such as oil stains and the like on the surface of the silicon wafer, the saponification effect of alkali in the cleaning agent is enhanced, the reaction of the cleaning agent on a unit area is increased, and the cleanliness of the surface of the silicon wafer is improved.
The first ultrasonic liquid medicine cleaning part and the second ultrasonic liquid medicine cleaning part adopt a self-circulation mode to recycle the cleaning agent solution, and the utilization rate of the cleaning agent solution is improved.
The number of the ultrasonic liquid medicine cleaning parts of the first liquid medicine cleaning part is at least two, the number of the ultrasonic liquid medicine cleaning parts can be multiple, and the ultrasonic liquid medicine cleaning parts are selected according to actual requirements and do not need to be specifically required.
The first overflow cleaning part is used for carrying out ultrasonic overflow cleaning on the silicon wafer and removing the cleaning agent solution on the surface of the silicon wafer. Here, the first overflow cleaning unit is a cleaning tank, i.e., 4 tanks, the cleaning tank (4 tanks) is filled with pure water and has an ultrasonic function, and ultrasonic cleaning is performed on the silicon wafer by using an overflow method to remove the cleaning agent solution on the surface of the silicon wafer, and the overflow method ensures the cleanliness of the pure water in the cleaning tank, thereby facilitating the removal of the cleaning agent solution on the surface of the silicon wafer.
The second liquid medicine cleaning part is provided with a bubbling cleaning part which is a cleaning tank, namely 5 tanks, the cleaning tank (5 tanks) is filled with high-concentration cleaning liquid medicine solution with bubbling function, the high-concentration cleaning liquid medicine solution is hydrogen peroxide solution and potassium hydroxide solution, the hydrogen peroxide solution and the potassium hydroxide solution are used for carrying out secondary liquid medicine cleaning on the silicon wafer, simultaneously bubbling and cleaning the silicon chip, wherein the hydrogen peroxide solution and the potassium hydroxide solution comprise 20-40% of hydrogen peroxide and 30-50% of potassium hydroxide, wherein the solubility of the hydrogen peroxide is 4.5-5.5 vol%, the concentration of the potassium hydroxide is 1.0-1.5 vol%, the hydrogen peroxide has oxidability, can effectively remove organic matters of the silicon wafer, a protective film is formed on the surface of the silicon wafer, so that the cleanliness of the surface of the silicon wafer is protected, and the adhesion of impurities on the surface of the silicon wafer is reduced; the potassium hydroxide enhances the saponification effect of hydrogen peroxide, improves the cleanliness of the surface of the silicon wafer, can effectively remove the mechanical stress damage of the surface of the silicon wafer, reduces the residue of metal ions on the surface of the silicon wafer, and improves the smoothness and the cleanliness of the surface of the silicon wafer. Preferably, the mass fraction of the hydrogen peroxide is 30 percent, and the mass fraction of the potassium hydroxide is 45 percent; the concentration of hydrogen peroxide is 5.0 vol%, and the concentration of potassium hydroxide is 1.2 vol%.
The third liquid medicine cleaning part is provided with a bubbling cleaning part which is a cleaning tank, namely 6 tanks, the cleaning tank (6 tank) is filled with low concentration cleaning liquid medicine solution with bubbling function, the low concentration cleaning liquid medicine solution is hydrogen peroxide solution and potassium hydroxide solution, the hydrogen peroxide solution and the potassium hydroxide solution are used for carrying out second liquid medicine cleaning on the silicon wafer, simultaneously bubbling and cleaning the silicon chip, wherein the hydrogen peroxide solution and the potassium hydroxide solution comprise 20-40% of hydrogen peroxide and 30-50% of potassium hydroxide, wherein the solubility of the hydrogen peroxide is 1.5-1.8 vol%, the concentration of the potassium hydroxide is 0.3-0.5 vol%, the hydrogen peroxide has oxidability, can effectively remove organic matters of the silicon wafer, a protective film is formed on the surface of the silicon wafer, so that the cleanliness of the surface of the silicon wafer is protected, and the adhesion of impurities on the surface of the silicon wafer is reduced; the potassium hydroxide enhances the saponification effect of hydrogen peroxide, improves the cleanliness of the surface of the silicon wafer, can effectively remove the mechanical stress damage of the surface of the silicon wafer, reduces the residue of metal ions on the surface of the silicon wafer, and improves the smoothness and the cleanliness of the surface of the silicon wafer. Preferably, the mass fraction of the hydrogen peroxide is 30 percent, and the mass fraction of the potassium hydroxide is 45 percent; the concentration of hydrogen peroxide is 1.6 vol%, and the concentration of potassium hydroxide is 0.4 vol%.
The second overflow cleaning part comprises a first ultrasonic overflow part, a second ultrasonic overflow part and a third ultrasonic overflow part, the first ultrasonic overflow part, the second ultrasonic overflow part and the third ultrasonic overflow part are sequentially arranged, ultrasonic cleaning is sequentially performed on the silicon wafer, here, the first ultrasonic overflow part is a cleaning tank, namely 7 tanks, the second ultrasonic overflow part is a cleaning tank, namely 8 tanks, the third ultrasonic overflow part is a cleaning tank, namely 9 tanks, and the three cleaning tanks (7 tanks, 8 tanks and 9 tanks) have ultrasonic functions, pure water is filled in the cleaning tanks, an overflow mode is adopted, ultrasonic overflow cleaning is sequentially performed on the silicon wafer, an acid solution on the surface of the silicon wafer is removed, and the cleanliness of the surface of the silicon wafer is improved.
The slow lifting part is used for lifting the silicon wafer and drying water on the surface of the silicon wafer, and comprises a slow lifting groove and a spraying part, wherein the spraying part is arranged on the upper part of the slow lifting groove through a support, and the spraying part is used for spraying water on the slow lifting groove, particularly spraying foam on the surface of water in the slow lifting groove, so that the rinsing capacity is improved. The slow pulling groove is obliquely arranged, namely 10 grooves, the inclination angle is 5-15 degrees, preferably the inclination angle is 10 degrees, pure water is filled in the slow pulling groove (10 grooves), the silicon wafer is rinsed in an overflow mode, the silicon wafer is slowly lifted by moving the grabbing device, the silicon wafer is blown in the pulling process, the moisture on the surface of the silicon wafer is reduced, meanwhile, the spraying part is provided with hot pure water, a spray pipe of the spraying part sprays the hot pure water, the temperature of the hot pure water is 50-70 ℃, and the selection is carried out according to actual requirements.
The cleaning system for the oversized monocrystalline silicon wafer is applied to clean the silicon wafer, and the cleaning method for the oversized monocrystalline silicon wafer comprises the following steps:
pre-cleaning: cleaning the silicon wafer for multiple times by adopting pure water in the pre-cleaning part, wherein the pure water is subjected to ultrasonic cleaning, the degummed silicon wafer is placed in a cleaning tank, namely 1 tank, of the pre-cleaning part, and ultrasonic overflow cleaning is carried out by adopting the pure water to remove impurities with larger particles on the surface of the silicon wafer; grabbing a flower basket containing silicon wafers by a grabbing manipulator, putting the flower basket containing the silicon wafers into a pre-cleaning tank, and carrying out ultrasonic overflow cleaning for 5-15 min.
Cleaning with a first liquid medicine: the cleaning method comprises the following steps of ultrasonically cleaning a silicon wafer by adopting a cleaning agent solution, filling the cleaning agent solution into two cleaning tanks of a first ultrasonic liquid medicine cleaning part and a second ultrasonic liquid medicine cleaning part to clean the silicon wafer, putting the silicon wafer into the cleaning tank of the first ultrasonic liquid medicine cleaning part, namely 2 tanks, and ultrasonically cleaning the silicon wafer, wherein the cleaning tank of the first ultrasonic liquid medicine cleaning part adopts a self-circulation mode, so that the cleaning agent solution can be recycled, impurities such as oil stains on the surface of the silicon wafer are removed, and the cleanliness of the surface of the silicon wafer is improved; after coming out of the cleaning tank (2 tanks) of the first ultrasonic liquid medicine cleaning part of the silicon wafer, the silicon wafer enters the cleaning tank (3 tanks) of the second ultrasonic liquid medicine cleaning part, and ultrasonic cleaning is carried out again, and the cleaning tank (3 tanks) of the second ultrasonic liquid medicine cleaning part also adopts a self-circulation mode, so that a cleaning agent solution can be recycled, and impurities on the surface of the silicon wafer are further removed; the cleaning agent solution is 3% -5% of cleaning agent, the cleaning agent is water-based cleaning agent and is a commercially available product, the cleaning agent is selected according to actual requirements, the cleaning agent is used for removing impurities such as oil stains and the like on the surface of the silicon wafer, the saponification effect of alkali in the cleaning agent is enhanced, the reaction of the cleaning agent on a unit area is increased, and the cleanliness of the surface of the silicon wafer is improved. And putting the silicon wafer from the pre-cleaning tank into a cleaning tank (2 tanks) of a first ultrasonic liquid medicine cleaning part, standing for 5-20min, performing ultrasonic cleaning by using a cleaning agent solution, taking out the silicon wafer from the cleaning tank of the first ultrasonic liquid medicine cleaning part, putting the silicon wafer into a cleaning tank (3 tanks) of a second ultrasonic liquid medicine cleaning part, standing for 5-20min, and performing ultrasonic cleaning by using the cleaning agent solution.
Overflow rinsing: and after the cleaning by the first liquid medicine, performing overflow cleaning, wherein the silicon wafer enters a cleaning tank of a first overflow cleaning part, namely 4 tanks, pure water is filled in the cleaning tank, and the pure water performs ultrasonic overflow cleaning on the silicon wafer in an overflow mode, so that a cleaning agent solution on the surface of the silicon wafer is removed, and the cleanliness of the surface of the silicon wafer is improved. And placing the silicon wafer from the second ultrasonic liquid medicine cleaning part into a cleaning tank of the first overflow cleaning part, and standing for 5-15min for ultrasonic overflow cleaning.
Cleaning with a second liquid medicine: and after the silicon wafer is subjected to overflow rinsing, carrying out second-time liquid medicine cleaning, carrying out bubbling cleaning by adopting second liquid medicine, further removing impurities and mechanical damage on the surface of the silicon wafer, and filling high-concentration cleaning liquid medicine solution into a cleaning tank, namely 5 tanks, of a second liquid medicine cleaning part to carry out bubbling cleaning on the silicon wafer. The high-concentration cleaning liquid solution is hydrogen peroxide and potassium hydroxide solution, the hydrogen peroxide and potassium hydroxide solution is used for carrying out second liquid cleaning on the silicon wafer and carrying out bubbling cleaning on the silicon wafer, the hydrogen peroxide and potassium hydroxide solution comprises 20-40% of hydrogen peroxide and 30-50% of potassium hydroxide, the solubility of hydrogen peroxide is 4.5-5.5 vol%, the concentration of potassium hydroxide is 1.0-1.5 vol%, hydrogen peroxide has oxidizability, organic matters of the silicon wafer can be effectively removed, a protective film is formed on the surface of the silicon wafer, the cleanliness of the surface of the silicon wafer is protected, and the attachment of impurities on the surface of the silicon wafer is reduced; the potassium hydroxide enhances the saponification effect of hydrogen peroxide, improves the cleanliness of the surface of the silicon wafer, can effectively remove the mechanical stress damage of the surface of the silicon wafer, reduces the residue of metal ions on the surface of the silicon wafer, and improves the smoothness and the cleanliness of the surface of the silicon wafer. Preferably, the mass fraction of the hydrogen peroxide is 30 percent, and the mass fraction of the potassium hydroxide is 45 percent; the concentration of hydrogen peroxide is 5.0 vol%, and the concentration of potassium hydroxide is 1.2 vol%. And (3) placing the silicon wafer coming out of the cleaning tank of the first overflow cleaning part into the cleaning tank of the second liquid medicine cleaning part, standing for 10-30min, and carrying out bubbling cleaning on the silicon wafer by adopting a high-concentration cleaning liquid medicine solution.
Cleaning with a third liquid medicine: and after the silicon wafer is cleaned by the second liquid medicine, performing third liquid medicine cleaning, performing bubbling cleaning by adopting third liquid medicine to further remove impurities on the surface of the silicon wafer, and filling a low-concentration cleaning liquid medicine solution into a cleaning tank, namely 6 tanks, of a third liquid medicine cleaning part to perform bubbling cleaning on the silicon wafer. The low-concentration cleaning liquid solution is hydrogen peroxide and potassium hydroxide solution, the hydrogen peroxide and potassium hydroxide solution is used for carrying out third liquid cleaning on the silicon wafer and carrying out bubbling cleaning on the silicon wafer, the hydrogen peroxide and potassium hydroxide solution comprises 20-40% of hydrogen peroxide and 30-50% of potassium hydroxide, the solubility of hydrogen peroxide is 1.5-1.8 vol%, the concentration of potassium hydroxide is 0.3-0.5 vol%, hydrogen peroxide has oxidizability, organic matters of the silicon wafer can be effectively removed, a protective film is formed on the surface of the silicon wafer, the cleanliness of the surface of the silicon wafer is protected, and the attachment of impurities on the surface of the silicon wafer is reduced; the potassium hydroxide enhances the saponification effect of hydrogen peroxide, improves the cleanliness of the surface of the silicon wafer, can effectively remove the mechanical stress damage of the surface of the silicon wafer, reduces the residue of metal ions on the surface of the silicon wafer, and improves the smoothness and the cleanliness of the surface of the silicon wafer. Preferably, the mass fraction of the hydrogen peroxide is 30 percent, and the mass fraction of the potassium hydroxide is 45 percent; the concentration of hydrogen peroxide is 1.6 vol%, and the concentration of potassium hydroxide is 0.4 vol%. And placing the silicon wafer from the cleaning tank of the second liquid medicine cleaning part into a cleaning tank of a third liquid medicine cleaning part, standing for 10-30min, and carrying out bubbling cleaning on the silicon wafer by adopting a low-concentration cleaning liquid medicine solution.
And (3) overflow cleaning: and performing ultrasonic overflow cleaning on the silicon wafer for a plurality of times by using pure water, wherein the number of times is at least three, preferably three, namely, pure water, namely 7 tanks, namely 8 tanks, namely 9 tanks, is filled in the cleaning tanks of the first ultrasonic overflow part, the second ultrasonic overflow part and the third ultrasonic overflow part, and the silicon wafer cleaned by using the third liquid medicine sequentially enters the cleaning tanks of the first ultrasonic overflow part, the second ultrasonic overflow part and the third ultrasonic overflow part by adopting an overflow mode, so that the ultrasonic overflow cleaning is performed on the silicon wafer, the third liquid medicine and impurities on the surface of the silicon wafer are removed, and the cleanliness of the surface of the silicon wafer is improved. And (3) sequentially putting the silicon wafer coming out of the cleaning tank of the third liquid medicine cleaning part into the cleaning tanks of the first ultrasonic overflow part, the second ultrasonic overflow part and the third ultrasonic overflow part, standing for 5-15min, and sequentially performing ultrasonic overflow cleaning on the silicon wafer.
Slowly pulling: pure water, namely 10 tanks, is filled in the cleaning tank of the slow pulling part, pure water overflow cleaning is carried out on the silicon wafer in an overflow mode, meanwhile, the spraying part at the upper part of the slow pulling part is opened, and the foam on the surface of the cleaning tank of the slow pulling part is washed, so that the rinsing capacity is increased, and the silicon wafer is prevented from being polluted by residual chemical reagents on the surface of the silicon wafer; meanwhile, the cleaning tank of the slow lifting part is obliquely arranged, so that the further drying of the moisture on the surface of the silicon wafer is improved, after cleaning, the silicon wafer is lifted upwards slowly, air is blown to the silicon wafer to remove the moisture on the surface of the silicon wafer, the cleaning of the silicon wafer is completed, and the silicon wafer enters the next procedure. And placing the silicon wafer from the third ultrasonic overflow part into a cleaning tank of a slow pulling part, standing for 5-10min, and performing slow pulling to remove water on the surface of the silicon wafer.
By adopting the technical scheme, the silicon wafer is sequentially subjected to the first liquid medicine cleaning, the second liquid medicine cleaning and the third liquid medicine cleaning, after the silicon wafer is cleaned, the surface cleanliness of the silicon wafer is high, and meanwhile, metal ions on the surface of the silicon wafer are less in residue, so that the surface cleanliness of the silicon wafer is improved, and the conversion efficiency of subsequent cells is improved; the silicon wafer surface is clean, the yield and the reliability of the battery piece can be improved, the texture structure enables incident light to be reflected and refracted on the silicon wafer surface for multiple times after the silicon wafer is textured, the light absorption is increased, the reflectivity is reduced, and the performance of the battery is improved.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (2)
1. A method for cleaning an oversized monocrystalline silicon wafer is characterized by comprising the following steps: the method comprises the following steps of cleaning the silicon wafer in sequence:
s1: cleaning with first liquid medicine; in the step S1, performing ultrasonic cleaning with a first liquid medicine, and performing at least two times of first liquid medicine cleaning, wherein the first liquid medicine is a cleaning agent solution, and the cleaning agent solution is a 3% -5% cleaning agent;
s2: overflow cleaning;
s3: cleaning with the second liquid medicine; in the step S3, performing bubble cleaning with a second liquid medicine, wherein the second liquid medicine is a high-concentration cleaning liquid medicine solution; the high-concentration cleaning liquid medicine solution is hydrogen peroxide solution and potassium hydroxide solution, wherein the mass fraction of the hydrogen peroxide solution is 20-40%, and the mass fraction of the potassium hydroxide is 30-50%;
the concentration of the hydrogen peroxide is 4.5-5.5 vol%, and the concentration of the potassium hydroxide is 1.0-1.5 vol%;
s4: cleaning with the third liquid medicine; in the step S4, performing bubble cleaning with a third liquid medicine, which is a low-concentration cleaning liquid medicine solution;
the low-concentration cleaning liquid medicine solution is hydrogen peroxide solution and potassium hydroxide solution, wherein,
the mass fraction of the hydrogen peroxide is 20-40%, and the mass fraction of the potassium hydroxide is 30-50%;
the concentration of the hydrogen peroxide is 1.5vol% -1.8vol%, and the concentration of the potassium hydroxide is 0.3vol% -0.5 vol%;
s5: overflow cleaning;
s6: slowly pulling, and spraying in the slow pulling process; in the step S6, hot pure water is adopted for spraying, the temperature of the hot pure water is 50-70 ℃, the hot pure water is used for spraying in the slow lifting groove, and the foam on the surface of the water in the slow lifting groove is sprayed; in the step S6, a slow pulling part is adopted for slow pulling, the slow pulling part is obliquely arranged, and pure water is arranged in the slow pulling part; the inclination angle of the slow lifting part is 5-15 degrees.
2. The method of cleaning a wafer of ultra-large scale monocrystalline silicon according to claim 1, characterized in that: a pre-cleaning is also performed before step S1, the pre-cleaning being performed with ultrasonic overflow cleaning using pure water.
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| CN111211042B (en) * | 2020-01-13 | 2022-11-11 | 天津中环领先材料技术有限公司 | Cleaning process for improving surface cleanliness of side-polished large-diameter silicon wafer |
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| CN110211904A (en) * | 2019-06-28 | 2019-09-06 | 阜宁协鑫光伏科技有限公司 | Slow pulling apparatus and silicon wafer cleaner |
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