CN102294332B - Method for cleaning silicon wafer linearly cut by diamond - Google Patents
Method for cleaning silicon wafer linearly cut by diamond Download PDFInfo
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- CN102294332B CN102294332B CN 201110251543 CN201110251543A CN102294332B CN 102294332 B CN102294332 B CN 102294332B CN 201110251543 CN201110251543 CN 201110251543 CN 201110251543 A CN201110251543 A CN 201110251543A CN 102294332 B CN102294332 B CN 102294332B
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Abstract
The invention discloses a method for cleaning a silicon wafer linearly cut by a diamond. The method comprises the following steps of: putting the silicon wafer into an ultrasonic cleaning machine, and degumming; putting the degummed silicon wafer into pure water at the temperature of between 30 and 50 DEG C, and cleaning by using ultrasonic waves; putting the cleaned silicon wafer into a pure water tank which is filled with lactic acid at the temperature of between 60 and 80 DEG C, and cleaning to remove defective gum on the surface of the silicon wafer; putting the silicon wafer into a wafer insertion machine for wafer insertion; putting the silicon wafer into the pure water, and cleaning by using the ultrasonic waves; putting the silicon wafer into mixed solution of a silicon wafer cleaning agent, sodium hydroxide and water at the temperature of between 40 and 60 DEG C, and cleaning by using the ultrasonic waves; putting the silicon wafer into the pure water at the temperature of between 20 and 30 DEG C, and cleaning by using the ultrasonic waves; and putting the silicon wafer into a drying machine at the temperature of between 100 and 140 DEG C for drying. By the method, dirt on the surface of the silicon wafer can be effectively removed, and the requirement of the surface of the silicon wafer for a solar battery is met; and the silicon wafer linearly cut by the diamond is subjected to analogous wool making treatment, the wool making effect of a subsequent battery plate can be improved, and cleaning wastewater can reach the emission standard after being simply treated.
Description
Technical field
The present invention relates to the silicon wafer cleaning method with diamond wire saw.
Background technology
Silicon wafer cleans the method refer to adopt physics or chemistry before the operations such as oxidation, photoetching, extension, diffusion and lead-in wire evaporation and removes silicon chip surface and stain, to obtain meeting the process of the silicon chip surface that cleannes require.Silicon chip surface stains and refers to that silicon chip surface deposits one or more of particle, metal, organic matter, moisture molecule and natural oxide etc.The real surface of silicon wafer is owing to be exposed to generation oxidation and absorption in the ambiance, often there is the very thin natural oxidizing layer of one deck on its surface, thickness is several dusts, tens dusts even dust up to a hundred, and the outer surface that natural oxidizing layer and ambiance form, also there are some surface energy levels, and adsorb some pollution foreign atoms.Intact Wafer Cleaning is always removed particulate and the harmful rete that stains at silicon chip surface, replaces continuous harmless rete oxide, fluoride or other volatile elements (or molecule), namely has the rete of atom homogeneous.The degree that silicon chip surface reaches the atom homogeneous is higher, and cleanliness factor is higher.At present people have developed a variety of processes that silicon wafer cleans that can be used for, common are: wet-chemical cleaning, ultrasonic cleaning method, million ablutions, bubbling ablution, scouring method, high-pressure injection method, centrifugal atomization method, hydrodynamics method, hydrodynamics method, dry method cleaning, little collection feam column method, laser beam cleaning, condensation spray technique, gas phase cleaning, non-infiltration liquid gunite, the online Vacuum Washing Technologies of silicon wafer, RCA standard cleaning, plasma clean, original position water douche etc.Although above-mentioned cleaning method is more, all be only applicable to the silicon chip that uses free type mortar cutting technique to produce.In free type mortar cutting process, carborundum as abrasive material is blended in the cooling fluid, rapid movement by steel wire is brought abrasive material in the cutting slit into and is produced dissection, this process need be used a large amount of mortars, mortar is mixed with a large amount of solia particle (steel wire powder, silicon carbide micro-powder, silica flour) after the cutting, relatively thickness.There is following problem in cleaning method:
The one, need to use a large amount of organic formulations as cleaning fluid, be used for removing silicon chip surface and stain, not only increase the cleaning cost, and caused a large amount of water to pollute, affect the COD of surrounding enviroment; The 2nd, operation is complicated, generally will carry out prerinse and clean two procedures, 5-9 the grooves such as prerinse must be through spray, fast row, rinsing/overflow, come unstuck, material all in one piece, and cleaning must be through 6-7 grooves such as pure water, organic cleaning agent, pure water.
Summary of the invention
For existing the problems referred to above of silicon wafer cleaning method in the above-mentioned prior art, it is good to the invention provides a kind of not only cleaning performance, easy to clean, and cleaning fluid consumption is few, and free from environmental pollution, is applicable to the cleaning method of the silicon wafer of diamond wire saw.
Cleaning method of the present invention is: first silicon wafer is put into supersonic wave cleaning machine and come unstuck, the pure water of again silicon wafer being put into 30-50 ℃ uses ultrasonic wave to clean, then silicon wafer is put into be added with lactic acid and temperature be 60-80 ℃ the pure water groove clean and remove the silicon wafer surface cull, then silicon wafer is put into plug-in sheet machine and carried out inserted sheet, again silicon wafer is put into the pure water Ultrasonic Cleaning, again silicon wafer is put into temperature and is 40-60 ℃ silicon slice detergent, use Ultrasonic Cleaning in the mixed liquor of NaOH and pure water, silicon wafer is put into temperature again and be 20-30 ℃ pure water Ultrasonic Cleaning, the drier of silicon wafer being put into temperature again and be 100-140 ℃ dries.
The weight ratio of described pure water and NaOH is: contain 10-300 gram NaOH in 100 kilograms of pure water, described silicon slice detergent and NaOH weight ratio are preferably 110～220 ︰ 1, when cleaning silicon wafer thin slice 160 μ m or when following, described ultrasonic frequency is 20-50KHZ; When cleaning other silicon wafer (greater than 160 μ m), described ultrasonic frequency is not less than 27 KHZ, and described silicon slice detergent density is 1.05-1.1g/ml.
The concrete steps of cleaning method of the present invention are:
(1) silicon wafer is put into supersonic wave cleaning machine and come unstuck, it is that 30-50 ℃ pure water used Ultrasonic Cleaning 10-20 minute that the silicon wafer after will coming unstuck is again put into temperature; Then silicon wafer being put into and being added with 3-8%wt lactic acid and temperature is that 60-80 ℃ pure water groove cleaned 20-30 minute, removes the silicon wafer surface cull with scouring pad again,
(2) use automatic slice inserting machine to carry out inserted sheet, the silicon wafer that stacks separately be inserted in the gaily decorated basket,
(3) the above-mentioned gaily decorated basket that silicon wafer is housed is put into pure water, uses Ultrasonic Cleaning 5 minutes,
(4) more above-mentioned silicon wafer is put into temperature be 40-60 ℃ silicon slice detergent, NaOH and with the mixed liquor of pure water with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 220 ︰ 1, NaOH weight is the 10-150 gram in described 100 kilograms of pure water
(5) more above-mentioned silicon wafer being put into temperature is that 40-60 ℃ the mixed liquor of silicon slice detergent, NaOH and pure water was with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 110 ︰ 1, NaOH weight is the 150-300 gram in described 100 kilograms of pure water, with Ultrasonic Cleaning 5 minutes
(6) more above-mentioned silicon wafer being put into temperature is 20-30 ℃ pure water, with Ultrasonic Cleaning 5 minutes, clean 3 times,
(7) more above-mentioned silicon wafer being put into temperature is that 100-140 ℃ drier dries 5-10 minute.
The invention has the beneficial effects as follows;
(1) it is dirty effectively to remove silicon wafer surface, reaches the requirement of silicon for solar cell wafer surface;
(2) the diamond wire saw silicon wafer is carried out class making herbs into wool, can improve follow-up battery slice etching effect.
(3) but the waste water qualified discharge after simple process after cleaning.
The specific embodiment
Embodiment 1, to put into supersonic wave cleaning machine with the silicon wafer of diamond wire processing first comes unstuck, the pure water of after coming unstuck silicon wafer being put into temperature and be 45 ℃ used Ultrasonic Cleaning 15 minutes, ultrasonic frequency is made as 35 KHZ, then silicon wafer being placed in Temperature Setting cleaned 25 minutes in 70 ℃ the tank that is added with 4%wt lactic acid, remove the silicon wafer surface cull with scouring pad after the pickling, re-using automatic slice inserting machine carries out inserted sheet with silicon wafer and separately is contained in the gaily decorated basket, every basket fills 25, sheet is thick to be 200 μ m, basket is filled the silicon wafer silicon wafer again and put into pure water usefulness Ultrasonic Cleaning 5 minutes, ultrasonic frequency is made as 35KHZ.Again basket is filled silicon wafer put into Temperature Setting at the mixed liquor of 50 ℃ silicon slice detergent, NaOH and pure water with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 220 ︰ 1, containing NaOH weight in described 100 kilograms of pure water is 160 grams, and ultrasonic frequency is made as 30KHZ; Then again basket is filled silicon wafer put into Temperature Setting at the mixed liquor of 55 ℃ silicon slice detergent, NaOH and pure water with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 110 ︰ 1, containing NaOH weight in described 100 kilograms of pure water is to be 260 grams, ultrasonic frequency is made as 35 KHZ, then again basket is filled silicon wafer and put into Temperature Setting at 25 ℃ pure water, each Ultrasonic Cleaning 5 minutes of using, continuous wash 3 times, ultrasonic frequency is made as 30 KHZ; Basket being filled silicon wafer, to put into temperature be that 120-130 ℃ drier dries 6-8 minute and makes silicon wafer again.
Embodiment 2, to put into supersonic wave cleaning machine with the silicon wafer of diamond wire processing first comes unstuck, the pure water of after coming unstuck silicon wafer being put into temperature and be 50 ℃ used Ultrasonic Cleaning 10 minutes, ultrasonic frequency is made as 35 KHZ, then silicon wafer being placed in Temperature Setting cleaned 20 minutes in 60 ℃ the tank that is added with 7%wt lactic acid, remove the silicon wafer surface cull with scouring pad after the pickling, re-using automatic slice inserting machine carries out inserted sheet with silicon wafer and separately is contained in the gaily decorated basket, every basket fills 25, sheet is thick to be 200 μ m, basket is filled the silicon wafer silicon wafer again and put into pure water usefulness Ultrasonic Cleaning 5 minutes, ultrasonic frequency is made as 35KHZ.Again basket is filled silicon wafer put into Temperature Setting at the mixed liquor of 60 ℃ silicon slice detergent, NaOH and pure water with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 180 ︰ 1, containing NaOH weight in described 100 kilograms of pure water is 20 grams, and ultrasonic frequency is made as 30KHZ; Then again basket is filled silicon wafer put into Temperature Setting at the mixed liquor of 55 ℃ silicon slice detergent, NaOH and pure water with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 140 ︰ 1, containing NaOH weight in described 100 kilograms of pure water is to be 140 grams, ultrasonic frequency is made as 35 KHZ, then again basket is filled silicon wafer and put into Temperature Setting at 25 ℃ pure water, each Ultrasonic Cleaning 5 minutes of using, continuous wash 3 times, ultrasonic frequency is made as 30 KHZ; Basket being filled silicon wafer, to put into temperature be that 120-130 ℃ drier dries 6-8 minute and makes silicon wafer again.
In addition, when cleaning silicon wafer thin slice (sheet thickness is 160 μ m or following), its cleaning method is identical with embodiment 1 or embodiment 2, is that described ultrasonic wave frequency is adjusted into 20-50KHZ.
Claims (1)
1. the cleaning method of diamond wire saw silicon wafer
,It is characterized in that: described method step is:
(1) silicon wafer is put into supersonic wave cleaning machine and come unstuck, it is that 30-50 ℃ pure water used Ultrasonic Cleaning 10-20 minute that the silicon wafer after will coming unstuck is again put into temperature; Then silicon wafer is put into the pure water groove that the lactic acid that is added with 3-8%wt and temperature be 60-80 ℃ and was cleaned 20-30 minute, remove the silicon wafer surface cull with scouring pad again,
(2) use automatic slice inserting machine to carry out inserted sheet, the silicon wafer that stacks separately be inserted in the gaily decorated basket,
(3) the above-mentioned gaily decorated basket that silicon wafer is housed is put into pure water, uses Ultrasonic Cleaning 5 minutes,
(4) more above-mentioned silicon wafer is put into temperature be 40-60 ℃ silicon slice detergent, NaOH and with the mixed liquor of pure water with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 220 ︰ 1, containing NaOH weight in described 100 kilograms of pure water is the 10-150 gram
(5) more above-mentioned silicon wafer being put into temperature is that 40-60 ℃ the mixed liquor of silicon slice detergent, NaOH and pure water was with Ultrasonic Cleaning 5 minutes, described silicon slice detergent and NaOH weight ratio are 110 ︰ 1, containing NaOH weight in described 100 kilograms of pure water is the 150-300 gram
(6) more above-mentioned silicon wafer being put into temperature is 20-30 ℃ pure water, with Ultrasonic Cleaning 5 minutes, clean 3 times,
(7) more above-mentioned silicon wafer being put into temperature is that 100-140 ℃ drier dries 5-10 minute.
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| CN 201110251543 CN102294332B (en) | 2011-08-08 | 2011-08-30 | Method for cleaning silicon wafer linearly cut by diamond |
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| CN 201110251543 CN102294332B (en) | 2011-08-08 | 2011-08-30 | Method for cleaning silicon wafer linearly cut by diamond |
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| CN102294332B true CN102294332B (en) | 2013-01-09 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102496662B (en) * | 2011-12-31 | 2013-11-13 | 保定天威英利新能源有限公司 | Treatment method for unqualified semi-finished products of solar cells |
| CN102517567A (en) * | 2012-01-04 | 2012-06-27 | 苏州日本电波工业有限公司 | Process for pre-silvering and cleaning crystal piece |
| CN102723403B (en) * | 2012-06-25 | 2015-02-18 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal degumming process |
| CN102806216A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Quasi-monocrystalline silicon wafer cleaning method |
| CN104668231A (en) * | 2015-02-13 | 2015-06-03 | 江西赛维Ldk太阳能高科技有限公司 | Degumming method for pallet for linear cutting and pallet degumming solution |
| CN105529290B (en) * | 2015-12-07 | 2018-01-12 | 天津中环半导体股份有限公司 | Silicon chip inserted sheet Full-automatic and cleaning process flow |
| CN106111610B (en) * | 2016-06-26 | 2018-07-17 | 河南盛达光伏科技有限公司 | The dirty prerinse processing method of monocrystalline silicon wire cutting fractal surfaces adhesion |
| CN107717640A (en) * | 2016-08-10 | 2018-02-23 | 云南民族大学 | A kind of method of ultrasonic assistant grinding and polishing |
| CN106824903A (en) * | 2016-12-23 | 2017-06-13 | 苏州阿特斯阳光电力科技有限公司 | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using |
| CN106735641A (en) * | 2017-01-19 | 2017-05-31 | 常州工学院 | A kind of method that slow feeding linear cutting bed prepares electrolysis electrode |
| CN107199643B (en) * | 2017-06-28 | 2019-10-01 | 苏州阿特斯阳光电力科技有限公司 | A kind of method of diamond wire cutting silicon rod |
| CN113441453B (en) * | 2021-06-11 | 2022-08-05 | 湖南国创同芯科技有限公司 | Wafer cleaning method and system |
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| JP3690619B2 (en) * | 1996-01-12 | 2005-08-31 | 忠弘 大見 | Cleaning method and cleaning device |
| JP3192610B2 (en) * | 1996-05-28 | 2001-07-30 | キヤノン株式会社 | Method for cleaning porous surface, method for cleaning semiconductor surface, and method for manufacturing semiconductor substrate |
| CN100539005C (en) * | 2006-09-30 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | The cleaning method of wafer surface after chemico-mechanical polishing |
| CN101590476A (en) * | 2009-06-10 | 2009-12-02 | 嘉兴五神光电材料有限公司 | A kind of cleaning method of monocrystalline silicon piece |
| CN102114481B (en) * | 2009-12-30 | 2015-04-15 | 安集微电子（上海）有限公司 | Cleaning method of silicon slice |
| CN101950778A (en) * | 2010-09-02 | 2011-01-19 | 董维来 | Solar silicon water wet-process automatic separating method |
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