CN101590476A - A kind of cleaning method of monocrystalline silicon piece - Google Patents
A kind of cleaning method of monocrystalline silicon piece Download PDFInfo
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- CN101590476A CN101590476A CNA2009100994957A CN200910099495A CN101590476A CN 101590476 A CN101590476 A CN 101590476A CN A2009100994957 A CNA2009100994957 A CN A2009100994957A CN 200910099495 A CN200910099495 A CN 200910099495A CN 101590476 A CN101590476 A CN 101590476A
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Abstract
The invention discloses a kind of cleaning method of monocrystalline silicon piece, aim to provide a kind of cleaning method of monocrystalline silicon piece, residuals such as the hickie of silicon chip surface, finger and mortar are removed clean, eliminate the finger-marks and the hickie phenomenon of monocrystalline silicon sheet surface, the quality of solar level monocrystalline silicon piece and conversion efficiency are further promoted.It includes following steps: mortar dash → comes unstuck in advance → and inserted sheet → cleaning → drying, detects.This method by mortar dash in advance, come unstuck, inserted sheet, cleaning, drying, detection, especially the immersion of adopting hydrofluoric acid solution be different from conventional cleaning method and workman when the different process operations, wear corresponding gloves, silicon chip can be eliminated finger-marks and hickie phenomenon effectively through the cleaning of hydrofluoric acid dips and cleaning fluid etc.
Description
Technical field
The present invention relates to field of semiconductor materials and green novel energy source field, more particularly relate to the cleaning method of the monocrystalline silicon piece of solar electrical energy generation.
Background technology
The particle that the solar level monocrystalline silicon piece produces on its surface in manufacture process, organic matter, metal, absorbing molecules, microroughness, natural oxidizing layer etc. all can have a strong impact on the performance of solar module, along with the development of large solar level battery component technology, also more and more higher to the requirement of the cleanliness factor of solar level monocrystalline silicon sheet surface and surface state.Obtain high-quality, high efficiency solar module, the contamination of only removing silicon chip surface no longer is final requirement.Cleaning the not good hickie that occurs at monocrystalline silicon sheet surface that causes, finger-marks etc. all can influence the conversion efficiency of solar cell, and remove hickie, finger-marks are still unsolved general difficult problems in the present industry.
Summary of the invention
The object of the present invention is to provide a kind of cleaning method of monocrystalline silicon piece, residuals such as the hickie of silicon chip surface, finger and mortar are removed clean, eliminate the finger-marks and the hickie phenomenon of monocrystalline silicon sheet surface, the quality of solar level monocrystalline silicon piece and conversion efficiency are further promoted.
In order to reach above-mentioned requirements, technical scheme of the present invention is: it includes following steps: mortar dash → comes unstuck in advance → and inserted sheet → cleaning → drying, detects, it is characterized in that:
A, mortar dash in advance: the silicon chip that cuts is hung upside down in order in the flushed channel of pre-impact machine, unloads flitch, adjust hydraulic pressure routinely, with the mortar of silicon chip surface till be clear water to draining, about 40min;
B, come unstuck: silicon chip is erect up put into the groove that comes unstuck, water pipe adds 70-80 ℃ warm water from bottom land, about emerge in worm water 5min, takes out silicon chip, and the adhesive tape of tearing is fast put into warm water with silicon chip, and water level must soak silicon chip;
C, inserted sheet: the silicon chip that will take off glue is immersed in the pure water about 20 ℃, inserts silicon chip in the film magazine naturally;
D, immersion, cleaning: with the immersion 30-50 second that silicon chip is put into hydrofluoric acid solution earlier, the silicon chip that will soak hydrofluoric acid then cleans through pure water, cleaning fluid and pure water more successively;
E, drying, detection: the silicon chip that cleans up is put into drier dry, the silicon chip after drying is detected.
This method by mortar dash in advance, come unstuck, inserted sheet, cleaning, drying, detection, especially the immersion of adopting hydrofluoric acid solution be different from conventional cleaning method and workman when the different process operations, wear corresponding gloves, silicon chip can be eliminated finger-marks and hickie phenomenon effectively through the cleaning of hydrofluoric acid dips and cleaning fluid etc.
The specific embodiment
The invention will be further described below in conjunction with embodiment.
Cleaning the method for monocrystalline silicon piece, may further comprise the steps: mortar dash → comes unstuck in advance → inserted sheet → cleaning → drying, detection, it is characterized in that:
A, mortar dash in advance: the silicon chip that cuts is hung upside down in order in the flushed channel of pre-impact machine, unloads flitch, adjust hydraulic pressure routinely, with the mortar of silicon chip surface till be clear water to draining, about 40min;
B, come unstuck: silicon chip is erect up put into the groove that comes unstuck, water pipe adds 70-80 ℃ warm water from bottom land, avoid warm water to splash silicon chip surface and produce oxidation, about emerge in worm water 5min, silicon chip is taken out, be placed on the clean towel adhesive tape of tearing fast, silicon chip is put into warm water, and water level must soak silicon chip;
C, inserted sheet: the silicon chip that will take off glue is immersed in the pure water about 20 ℃, and silicon chip is inserted in the film magazine naturally, when inserted sheet, needs silicon chip is pushed open with thumb gently, pinches middle part at silicon chip with hand, naturally in the insertion film magazine;
D, immersion, cleaning:
1, in the immersion of hydrofluoric acid solution: with the immersion 30-50 second that silicon chip is put into hydrofluoric acid solution earlier, described hydrofluoric acid solution is that the volume ratio of the hydrofluoric acid of mass percent 40% and pure water is 1: 100～120 solution;
2,1 st pure water cleans: it is to clean in the 40-45 ℃ of pure water that the silicon slice placed that will soak hydrofluoric acid is gone into water temperature;
3, a cleaning fluid cleans: used cleaning fluid is the silicon slice detergent preparation that market monarch on sale closes Dacroment, and the volume proportion of cleaning fluid is: the A agent: the B agent is 1: 79～95, and the water temperature of cleaning fluid is 60-70 ℃;
4, secondary cleaning liquid cleans: used cleaning fluid is the silicon slice detergent preparation that market monarch on sale closes Dacroment, and the volume proportion of cleaning fluid is: the A agent: the B agent is 1: 87～96,, the water temperature of cleaning fluid is 60-70 ℃;
5, second pure water cleans: will go into water temperature through the silicon slice placed that twice cleaning fluid cleans is to clean in the 40-45 ℃ of pure water;
In above-mentioned immersion, cleaning process, need be accompanied by ultrasonic vibration, earlier to silicon chip after hydrofluoric acid solution soaks, silicon chip carries out ultrasonic vibration in hydrofluoric acid solution, and bubbling, all want ultrasonic vibration in the overall process that cleaning fluid cleans and pure water cleans subsequently, used ultrasonic power is 2000 watts, and frequency is 40KHz.It is identical that wherein 1 st pure water cleans, cleaning fluid cleans, secondary cleaning liquid cleans the time of cleaning with second pure water, is 3-5 minute respectively.For cleaning fluid, the silicon chip that every cleaning is about 4000 is changed a cleaning fluid.It should be noted that 1 st pure water cleans with second pure water cleans and must carry out in two different service sinks, to improve the cleannes of cleaning;
E, drying, detection: the silicon chip that cleans up is put into drier dries, the silicon chip after drying is detected, in detecting if find dirty sheet again since cleaning fluid wash down clearly to detect qualified till.
In above-mentioned process of respectively cleaning monocrystalline silicon piece, take behind the corresponding gloves on the workman need be with when taking silicon chip: workman's gloves that silicon chip is worn of taking are medical PE gloves before soaking, clean at step D, what worn in step D immersion, cleaning process is common emgloves, when the workman takes the silicon chip detection after step D immersion, cleaning are finished, three assistants cover be to be with from the inside to surface, butyronitrile gloves, PE gloves and high-purity white yarn gloves are followed successively by.
Claims (10)
1, a kind of cleaning method of monocrystalline silicon piece may further comprise the steps: mortar dash → comes unstuck in advance → and inserted sheet → cleaning → drying, detects, it is characterized in that:
A, mortar dash in advance: the silicon chip that cuts is hung upside down in order in the flushed channel of pre-impact machine, unloads flitch, adjust hydraulic pressure routinely, with the mortar of silicon chip surface till be clear water to draining, about 40min;
B, come unstuck: silicon chip is erect up put into the groove that comes unstuck, water pipe adds 70-80 ℃ warm water from bottom land, about emerge in worm water 5min, takes out silicon chip, and the adhesive tape of tearing is fast put into warm water with silicon chip, and water level must soak silicon chip;
C, inserted sheet: the silicon chip that will take off glue is immersed in the pure water about 20 ℃, inserts silicon chip in the film magazine naturally;
D, immersion, cleaning: with the immersion 30-50 second that silicon chip is put into hydrofluoric acid solution earlier, the silicon chip that will soak hydrofluoric acid then cleans through pure water, cleaning fluid and pure water more successively;
E, drying, detection: the silicon chip that cleans up is put into drier dry, the silicon chip after drying is detected.
According to the cleaning method of a kind of monocrystalline silicon piece of claim 1, it is characterized in that when step C inserted sheet that 2, silicon chip is pushed open with thumb gently pinched middle part at silicon chip with hand, inserts in the film magazine naturally.
3,, it is characterized in that at the hydrofluoric acid solution of step D described in cleaning being that the volume ratio of the hydrofluoric acid of mass percent 40% and pure water is 1: 100～120 solution according to the cleaning method of a kind of monocrystalline silicon piece of claim 1.
4, according to the cleaning method of a kind of monocrystalline silicon piece of claim 1, it is characterized in that in step D cleans the water temperature that twice usefulness pure water cleans is 40-45 ℃, the water temperature of cleaning fluid is 60-70 ℃.
5, according to the cleaning method of a kind of monocrystalline silicon piece of claim 1, it is characterized in that in the process of step D, immersion, cleaning, need being accompanied by ultrasonic vibration, earlier to silicon chip after hydrofluoric acid solution soaks, silicon chip carries out ultrasonic vibration in hydrofluoric acid solution, and bubbling, all want ultrasonic vibration in the overall process of cleaning subsequently.
6,, it is characterized in that in step D cleans the time of each cleaning of cleaning with pure water, cleaning fluid and pure water is identical, is 3-5 minute respectively according to the cleaning method of a kind of monocrystalline silicon piece of claim 1.
7, according to the cleaning method of a kind of monocrystalline silicon piece of claim 1, it is characterized in that silicon chip need be through the cleaning of twice cleaning fluid in step D cleans, the volume proportion of used cleaning fluid for the first time usefulness be: the A agent: the B agent is 1: 79～95, usefulness is for the second time: the A agent: the B agent is 1: 87～96, used cleaning fluid closes the silicon slice detergent preparation of Dacroment with monarch, for cleaning fluid, the silicon chip that every cleaning is about 4000 is changed a cleaning fluid.
8, according to the cleaning method of a kind of monocrystalline silicon piece of claim 5, used ultrasonic power is 2000 watts when it is characterized in that step D cleans, and frequency is 40KHz.
9, according to the cleaning method of a kind of monocrystalline silicon piece of claim 1, it is characterized in that before step D cleans workman's gloves that silicon chip is worn of taking are medical PE gloves, what worn in the cleaning process is common emgloves.
10, according to the cleaning method of a kind of monocrystalline silicon piece of claim 1, it is characterized in that step D has cleaned the back workman and taken silicon chip when detecting, to be with three assistants cover from the inside to surface, be followed successively by butyronitrile gloves, PE gloves and high-purity white yarn gloves.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2009100994957A CN101590476A (en) | 2009-06-10 | 2009-06-10 | A kind of cleaning method of monocrystalline silicon piece |
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| CNA2009100994957A CN101590476A (en) | 2009-06-10 | 2009-06-10 | A kind of cleaning method of monocrystalline silicon piece |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101817006A (en) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | Method for cleaning surface of solar silicon wafer |
| CN102092716A (en) * | 2010-11-24 | 2011-06-15 | 浙江芯能光伏科技有限公司 | Silicon material cleaning method |
| CN102294332A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for cleaning silicon wafer linearly cut by diamond |
| CN102327882A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cleaning process of monocrystalline silicon wafer |
| CN102744230A (en) * | 2012-07-26 | 2012-10-24 | 浙江矽盛电子有限公司 | Cleaning method for dirty and stuck solar silicon chip |
| CN103464418A (en) * | 2013-09-18 | 2013-12-25 | 天津市环欧半导体材料技术有限公司 | Semiconductor silicon chip degumming process |
| CN102114481B (en) * | 2009-12-30 | 2015-04-15 | 安集微电子（上海）有限公司 | Cleaning method of silicon slice |
| CN106299022A (en) * | 2016-08-19 | 2017-01-04 | 天津英利新能源有限公司 | A kind of process reducing equipment shell fragment cell piece C3 ratio |
| CN108722982A (en) * | 2018-05-28 | 2018-11-02 | 邢台晶龙电子材料有限公司 | A kind of processing method of polycrystalline crusher Jaw plate |
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2009
- 2009-06-10 CN CNA2009100994957A patent/CN101590476A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102114481B (en) * | 2009-12-30 | 2015-04-15 | 安集微电子（上海）有限公司 | Cleaning method of silicon slice |
| CN101817006A (en) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | Method for cleaning surface of solar silicon wafer |
| CN102092716A (en) * | 2010-11-24 | 2011-06-15 | 浙江芯能光伏科技有限公司 | Silicon material cleaning method |
| CN102294332A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for cleaning silicon wafer linearly cut by diamond |
| CN102327882A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cleaning process of monocrystalline silicon wafer |
| CN102744230A (en) * | 2012-07-26 | 2012-10-24 | 浙江矽盛电子有限公司 | Cleaning method for dirty and stuck solar silicon chip |
| CN103464418A (en) * | 2013-09-18 | 2013-12-25 | 天津市环欧半导体材料技术有限公司 | Semiconductor silicon chip degumming process |
| CN103464418B (en) * | 2013-09-18 | 2015-10-07 | 天津市环欧半导体材料技术有限公司 | A kind of semi-conductor silicon chip degumming tech |
| CN106299022A (en) * | 2016-08-19 | 2017-01-04 | 天津英利新能源有限公司 | A kind of process reducing equipment shell fragment cell piece C3 ratio |
| CN108722982A (en) * | 2018-05-28 | 2018-11-02 | 邢台晶龙电子材料有限公司 | A kind of processing method of polycrystalline crusher Jaw plate |
| CN108722982B (en) * | 2018-05-28 | 2020-09-22 | 邢台晶龙电子材料有限公司 | Treatment method of jaw plate of polycrystalline crusher |
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Open date: 20091202 |