CN102327882A - Cleaning process of monocrystalline silicon wafer - Google Patents
Cleaning process of monocrystalline silicon wafer Download PDFInfo
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- CN102327882A CN102327882A CN201110230941A CN201110230941A CN102327882A CN 102327882 A CN102327882 A CN 102327882A CN 201110230941 A CN201110230941 A CN 201110230941A CN 201110230941 A CN201110230941 A CN 201110230941A CN 102327882 A CN102327882 A CN 102327882A
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Abstract
The invention relates to a cleaning process of a monocrystalline silicon wafer. The cleaning process comprises the following steps: (1) pre-flushing: orderly cleaning the monocrystalline silicon wafer in four grooves of a four-groove degumming machine; (2) degumming: manually degumming the pre-flushed silicon wafer; (3) ultrasonic wave cleaning: immersing the degummed silicon wafer in a six-groove type ultrasonic wave cleaning machine; (4) whirling: centrifugally whirling the cleaned silicon wafer on a centrifugal whirling device; (5) checking; detecting the appearance of the whirled silicon wafer, entering the other processes when the detection is qualified. The cleaning process has good cleaning effect, the yield is greatly improved, and the working efficiency of the machine is greatly improved.
Description
Technical field
The present invention relates to the monocrystalline silicon piece production technology in photovoltaic technology field, specifically a kind of cleaning of monocrystalline silicon piece.
Background technology
Along with the popularization of green energy resource in the global range and the develop rapidly of semiconductor industry in recent years, also more and more harsher to the requirement of silicon chip.As the key technology of silicon chip production upstream, the novel silicon chip cleaning that emerges in recent years has clean surface quality height, cleaning efficiency advantages of higher.Existing silicon chip cleaning generally comprises comes unstuck, cleans and dry step; But because the control of scavenging period and water temperature is improper; Stable in process of production poor, the cleaning fluid of first batch and the 3rd batch silicon chip is residual to differ 30%, and dirty sheet often appears spending in the silicon chip that comes out after the 3rd batch; Qualification rate only has only about 80% sometimes, has caused great loss.
Summary of the invention
The present invention is directed to the deficiency of above-mentioned prior art, the cleaning of the monocrystalline silicon piece that a kind of stability is high, qualification rate is high is provided.
According to technical scheme provided by the invention: a kind of cleaning of monocrystalline silicon piece comprises the steps:
(1) flushing in advance: the monocrystalline silicon piece that will cut is put into the gaily decorated basket, pushes four grooves of four groove degumming machines successively, in No. 1, No. 2 grooves, carries out dashing in advance drenching, and pure water temperature is 45～50 ℃; Time is 6-7 minute, in No. 3 grooves, carries out ultrasonic cleaning, ultrasonic 6-7 minute; Water temperature 55-60 ℃, supersonic frequency is the 45-50 hertz, in No. 4 grooves, adds lactic acid or the oxalic acid or the citric acid of 3%-5% volumetric concentration; Ultrasonic cleaning 6-7 minute, water temperature 55-60 ℃, supersonic frequency was the 45-50 hertz;
(2) come unstuck: the silicon chip after will washing in advance is immersed in the water, and 50～60 ℃ of water temperatures are fallen shape naturally, and film is torn in manual work, and coming unstuck packs silicon chip into after finishing cleans in the film magazine;
(3) ultrasonic waves for cleaning: the film magazine that installs is immersed each was slightly washed 6-7 minute in first, second groove clear water of six groove type ultrasonic ripple cleaning machines, 45～50 ℃ of water temperatures; Silicon chip after slightly washing was immersed in the cleaning fluid of the 3rd, the 4th groove of six groove type ultrasonic ripple cleaning machines 60～65 ℃ of water temperatures each fine purifiation 6-7 minute; Silicon chip behind the fine purifiation was immersed in the clear water of the 5th, the 6th groove of six groove type ultrasonic ripple cleaning machines each rinsing 6-7 minute, and opened overflow valve simultaneously, 55～60 ℃ of water temperatures;
(4) dry: the silicon chip after will cleaning carries out centrifuge dripping in centrifuge dripping device, 55 ℃ of temperature, and rotating speed 400 changes time 6-7 minute;
(5) check: the silicon chip after will drying carries out outward appearance detection, detects to change other operations over to after qualified.
The preparation of said cleaning fluid: A agent and the B agent of at first Changzhou monarch being closed the JH-15 silicon chip scavenger specially that producer provides mixes according to 1: 2 volume ratio and processes mixture; Then said mixture is mixed by the weight ratio of 3:100 with deionized water and stir, be mixed with cleaning fluid.
Compared with present technology the present invention has the following advantages: cleaning performance is good, and qualification rate significantly improves, and has greatly improved the operating efficiency of machine.
The specific embodiment
Below in conjunction with specific embodiment the present invention is further described.
Embodiment 1
A kind of cleaning of monocrystalline silicon piece comprises the steps:
(1) flushing in advance: the monocrystalline silicon piece that will cut is put into the gaily decorated basket, pushes four grooves of four groove degumming machines successively, in No. 1, No. 2 grooves, carries out dashing in advance drenching, and pure water temperature is 45 ℃; Time is 6 minutes, in No. 3 grooves, carries out ultrasonic cleaning, ultrasonic 6 minutes; 55 ℃ of water temperatures, supersonic frequency are 45 hertz, in No. 4 grooves, add the lactic acid of 3% volumetric concentration; Ultrasonic cleaning 6 minutes, 55 ℃ of water temperatures, supersonic frequency are 45 hertz;
(2) come unstuck: the silicon chip after will washing in advance is immersed in the water, and 50 ℃ of water temperatures are fallen shape naturally, and film is torn in manual work, and coming unstuck packs silicon chip into after finishing cleans in the film magazine;
(3) ultrasonic waves for cleaning: the film magazine that installs is immersed each was slightly washed 6 minutes in first, second groove clear water of six groove type ultrasonic ripple cleaning machines, 45 ℃ of water temperatures; Silicon chip after slightly washing was immersed in the cleaning fluid of the 3rd, the 4th groove of six groove type ultrasonic ripple cleaning machines each fine purifiation 6 minutes, 60 ℃ of water temperatures; Silicon chip behind the fine purifiation is immersed in the clear water of the 5th, the 6th groove of six groove type ultrasonic ripple cleaning machines each rinsing 6 minutes, and opened overflow valve simultaneously, 55 ℃ of water temperatures;
(4) dry: the silicon chip after will cleaning carries out centrifuge dripping in centrifuge dripping device, 55 ℃ of temperature, and rotating speed 400 changes 6 minutes time;
(5) check: the silicon chip after will drying carries out outward appearance and detects, and requires bad phenomenon such as outward appearance is even, no grease, impurity, aberration, water mark, excessive erosion blackout, and presentation quality is good, detects to change other operations over to after qualified.
The preparation of cleaning fluid in the ultrasonic waves for cleaning: A agent and the B agent of at first Changzhou monarch being closed the JH-15 silicon chip scavenger specially that producer provides mixes according to 1: 2 volume ratio and processes mixture; Then said mixture is mixed by the weight ratio of 3:100 with deionized water and stir, be mixed with cleaning fluid.The A agent of silicon slice detergent and B agent are the commercially available prod.
Embodiment 2
A kind of cleaning of monocrystalline silicon piece comprises the steps:
(1) flushing in advance: the monocrystalline silicon piece that will cut is put into the gaily decorated basket, pushes four grooves of four groove degumming machines successively, in No. 1, No. 2 grooves, carries out dashing in advance drenching, and pure water temperature is 50 ℃; Time is 7 minutes, in No. 3 grooves, carries out ultrasonic cleaning, ultrasonic 7 minutes; 60 ℃ of water temperatures, supersonic frequency are 50 hertz, in No. 4 grooves, add the oxalic acid of 5% volumetric concentration; Ultrasonic cleaning 7 minutes, 60 ℃ of water temperatures, supersonic frequency are 50 hertz;
(2) come unstuck: the silicon chip after will washing in advance is immersed in the water, and 60 ℃ of water temperatures are fallen shape naturally, and film is torn in manual work, and coming unstuck packs silicon chip into after finishing cleans in the film magazine;
(3) ultrasonic waves for cleaning: the film magazine that installs is immersed each was slightly washed 7 minutes in first, second groove clear water of six groove type ultrasonic ripple cleaning machines, 50 ℃ of water temperatures; Silicon chip after slightly washing was immersed in the cleaning fluid of the 3rd, the 4th groove of six groove type ultrasonic ripple cleaning machines each fine purifiation 7 minutes, 65 ℃ of water temperatures; Silicon chip behind the fine purifiation is immersed in the clear water of the 5th, the 6th groove of six groove type ultrasonic ripple cleaning machines each rinsing 7 minutes, and opened overflow valve simultaneously, 60 ℃ of water temperatures;
(4) dry: the silicon chip after will cleaning carries out centrifuge dripping in centrifuge dripping device, 55 ℃ of temperature, and rotating speed 400 changes 7 minutes time;
(5) check: the silicon chip after will drying carries out outward appearance and detects, and requires bad phenomenon such as outward appearance is even, no grease, impurity, aberration, water mark, excessive erosion blackout, and presentation quality is good, detects to change other operations over to after qualified.
Embodiment 3
A kind of cleaning of monocrystalline silicon piece comprises the steps:
(1) flushing in advance: the monocrystalline silicon piece that will cut is put into the gaily decorated basket, pushes four grooves of four groove degumming machines successively, in No. 1, No. 2 grooves, carries out dashing in advance drenching, and pure water temperature is 48 ℃; Time is 6.5 minutes, in No. 3 grooves, carries out ultrasonic cleaning, ultrasonic 6.5 minutes; 58 ℃ of water temperatures, supersonic frequency are 57 hertz, in No. 4 grooves, add the citric acid of 4% volumetric concentration; Ultrasonic cleaning 6.5 minutes, 58 ℃ of water temperatures, supersonic frequency are 48 hertz;
(2) come unstuck: the silicon chip after will washing in advance is immersed in the water, and 57 ℃ of water temperatures are fallen shape naturally, and film is torn in manual work, and coming unstuck packs silicon chip into after finishing cleans in the film magazine;
(3) ultrasonic waves for cleaning: the film magazine that installs is immersed each was slightly washed 6.5 minutes in first, second groove clear water of six groove type ultrasonic ripple cleaning machines, 48 ℃ of water temperatures; Silicon chip after slightly washing was immersed in the cleaning fluid of the 3rd, the 4th groove of six groove type ultrasonic ripple cleaning machines each fine purifiation 6.5 minutes, 62 ℃ of water temperatures; Silicon chip behind the fine purifiation is immersed in the clear water of the 5th, the 6th groove of six groove type ultrasonic ripple cleaning machines each rinsing 6.5 minutes, and opened overflow valve simultaneously, 58 ℃ of water temperatures;
(4) dry: the silicon chip after will cleaning carries out centrifuge dripping in centrifuge dripping device, 55 ℃ of temperature, and rotating speed 400 changes 6.5 minutes time;
(5) check: the silicon chip after will drying carries out outward appearance and detects, and requires bad phenomenon such as outward appearance is even, no grease, impurity, aberration, water mark, excessive erosion blackout, and presentation quality is good, detects to change other operations over to after qualified.
Claims (2)
1. the cleaning of a monocrystalline silicon piece is characterized in that, comprises the steps:
(1) flushing in advance: the monocrystalline silicon piece that will cut is put into the gaily decorated basket, pushes four grooves of four groove degumming machines successively, in No. 1, No. 2 grooves, carries out dashing in advance drenching, and pure water temperature is 45～50 ℃; Time is 6-7 minute, in No. 3 grooves, carries out ultrasonic cleaning, ultrasonic 6-7 minute; Water temperature 55-60 ℃, supersonic frequency is the 45-50 hertz, in No. 4 grooves, adds lactic acid or the oxalic acid or the citric acid of 3%-5% volumetric concentration; Ultrasonic cleaning 6-7 minute, water temperature 55-60 ℃, supersonic frequency was the 45-50 hertz;
(2) come unstuck: the silicon chip after will washing in advance is immersed in the water, and 50～60 ℃ of water temperatures are fallen shape naturally, and film is torn in manual work, and coming unstuck packs silicon chip into after finishing cleans in the film magazine;
(3) ultrasonic waves for cleaning: the film magazine that installs is immersed each was slightly washed 6-7 minute in first, second groove clear water of six groove type ultrasonic ripple cleaning machines, 45～50 ℃ of water temperatures; Silicon chip after slightly washing was immersed in the cleaning fluid of the 3rd, the 4th groove of six groove type ultrasonic ripple cleaning machines 60～65 ℃ of water temperatures each fine purifiation 6-7 minute; Silicon chip behind the fine purifiation was immersed in the clear water of the 5th, the 6th groove of six groove type ultrasonic ripple cleaning machines each rinsing 6-7 minute, and opened overflow valve simultaneously, 55～60 ℃ of water temperatures;
(4) dry: the silicon chip after will cleaning carries out centrifuge dripping in centrifuge dripping device, 55 ℃ of temperature, and rotating speed 400 changes time 6-7 minute;
(5) check: the silicon chip after will drying carries out outward appearance detection, detects to change other operations over to after qualified.
2. according to the cleaning of the described monocrystalline silicon piece of claim 1; It is characterized in that: the preparation of said cleaning fluid: at first the A agent of silicon slice detergent and B agent are mixed according to 1: 2 volume ratio and process mixture; Then said mixture is mixed by the weight ratio of 3:100 with deionized water and stir, be mixed with cleaning fluid.
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| CN201110230941A CN102327882A (en) | 2011-08-12 | 2011-08-12 | Cleaning process of monocrystalline silicon wafer |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709157A (en) * | 2012-05-30 | 2012-10-03 | 常州佳讯光电产业发展有限公司 | Diode cleaning process and cleaning equipment |
| CN102698989A (en) * | 2012-06-11 | 2012-10-03 | 协鑫阿特斯（苏州）光伏科技有限公司 | Method for precleaning silicon wafer |
| CN102723403A (en) * | 2012-06-25 | 2012-10-10 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal degumming process |
| CN103706594A (en) * | 2012-09-29 | 2014-04-09 | 浙江昱辉阳光能源有限公司 | Cleaning method for original silicon |
| CN103785640A (en) * | 2012-10-31 | 2014-05-14 | 浙江昱辉阳光能源有限公司 | Cleaning method of quasi monocrystalline silicon |
| CN103887212A (en) * | 2014-03-12 | 2014-06-25 | 张家港市港威超声电子有限公司 | Full-automatic solar silicon wafer washing machine |
| CN105710066A (en) * | 2016-03-16 | 2016-06-29 | 中锗科技有限公司 | Method for removing polishing residual reagents of solar monocrystalline germanium slice |
| CN105855213A (en) * | 2016-03-31 | 2016-08-17 | 苏州晶樱光电科技有限公司 | Silicon wafer degumming process |
| CN105965706A (en) * | 2016-05-24 | 2016-09-28 | 浙江海顺新能源有限公司 | Solar grade crystal silicon slicing technique |
| CN106607373A (en) * | 2016-10-31 | 2017-05-03 | 芜湖赋兴光电有限公司 | Method for cleaning flexible printed circuit board |
| CN106711281A (en) * | 2016-12-13 | 2017-05-24 | 广东爱康太阳能科技有限公司 | Crystalline silicon cell manufacturing method |
| CN106824903A (en) * | 2016-12-23 | 2017-06-13 | 苏州阿特斯阳光电力科技有限公司 | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using |
| CN108372149A (en) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | A kind of Degumming method of wire cutting solar energy germanium wafer |
| CN108565206A (en) * | 2018-03-20 | 2018-09-21 | 力特半导体（无锡）有限公司 | A kind of cleaning method of silicon chip surface scaling powder |
| CN108753478A (en) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | A kind of single crystal silicon semiconductor cleaning agent and its cleaning method |
| CN109979799A (en) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | The Degumming method of semiconductor wafer |
| CN110434112A (en) * | 2019-08-09 | 2019-11-12 | 无锡市芯飞通光电科技有限公司 | A kind of chip cleaning process |
| CN114247682A (en) * | 2021-11-25 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | Special post-cutting cleaning device and cleaning method for silicon carbide wafer |
| CN114887990A (en) * | 2022-05-13 | 2022-08-12 | 安徽光智科技有限公司 | Ultrasonic cleaning process for cemented lens |
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Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709157B (en) * | 2012-05-30 | 2014-07-09 | 常州佳讯光电产业发展有限公司 | Diode cleaning process and cleaning equipment |
| CN102709157A (en) * | 2012-05-30 | 2012-10-03 | 常州佳讯光电产业发展有限公司 | Diode cleaning process and cleaning equipment |
| CN102698989A (en) * | 2012-06-11 | 2012-10-03 | 协鑫阿特斯（苏州）光伏科技有限公司 | Method for precleaning silicon wafer |
| CN102723403A (en) * | 2012-06-25 | 2012-10-10 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal degumming process |
| CN102723403B (en) * | 2012-06-25 | 2015-02-18 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal degumming process |
| CN103706594A (en) * | 2012-09-29 | 2014-04-09 | 浙江昱辉阳光能源有限公司 | Cleaning method for original silicon |
| CN103706594B (en) * | 2012-09-29 | 2016-06-08 | 浙江昱辉阳光能源有限公司 | The purging method of a kind of original silicon |
| CN103785640A (en) * | 2012-10-31 | 2014-05-14 | 浙江昱辉阳光能源有限公司 | Cleaning method of quasi monocrystalline silicon |
| CN103785640B (en) * | 2012-10-31 | 2016-07-06 | 浙江昱辉阳光能源有限公司 | A kind of cleaning method of quasi-monocrystalline silicon |
| CN103887212A (en) * | 2014-03-12 | 2014-06-25 | 张家港市港威超声电子有限公司 | Full-automatic solar silicon wafer washing machine |
| CN105710066A (en) * | 2016-03-16 | 2016-06-29 | 中锗科技有限公司 | Method for removing polishing residual reagents of solar monocrystalline germanium slice |
| CN105710066B (en) * | 2016-03-16 | 2018-03-13 | 中锗科技有限公司 | A kind of method for removing solar energy single germanium wafer polishing residual medicament |
| CN105855213A (en) * | 2016-03-31 | 2016-08-17 | 苏州晶樱光电科技有限公司 | Silicon wafer degumming process |
| CN105965706A (en) * | 2016-05-24 | 2016-09-28 | 浙江海顺新能源有限公司 | Solar grade crystal silicon slicing technique |
| CN106607373A (en) * | 2016-10-31 | 2017-05-03 | 芜湖赋兴光电有限公司 | Method for cleaning flexible printed circuit board |
| CN106711281A (en) * | 2016-12-13 | 2017-05-24 | 广东爱康太阳能科技有限公司 | Crystalline silicon cell manufacturing method |
| CN106824903A (en) * | 2016-12-23 | 2017-06-13 | 苏州阿特斯阳光电力科技有限公司 | The Degumming method of the crystal silicon chip of Buddha's warrior attendant wire cutting and the ultrasonic tank for using |
| CN109979799A (en) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | The Degumming method of semiconductor wafer |
| CN108372149A (en) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | A kind of Degumming method of wire cutting solar energy germanium wafer |
| CN108565206A (en) * | 2018-03-20 | 2018-09-21 | 力特半导体（无锡）有限公司 | A kind of cleaning method of silicon chip surface scaling powder |
| CN108565206B (en) * | 2018-03-20 | 2020-10-09 | 力特半导体（无锡）有限公司 | Cleaning method of silicon chip surface soldering flux |
| CN108753478A (en) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | A kind of single crystal silicon semiconductor cleaning agent and its cleaning method |
| CN110434112A (en) * | 2019-08-09 | 2019-11-12 | 无锡市芯飞通光电科技有限公司 | A kind of chip cleaning process |
| CN114247682A (en) * | 2021-11-25 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | Special post-cutting cleaning device and cleaning method for silicon carbide wafer |
| CN114887990A (en) * | 2022-05-13 | 2022-08-12 | 安徽光智科技有限公司 | Ultrasonic cleaning process for cemented lens |
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Application publication date: 20120125 |