CN105441200A - Semiconductor silicon wafer degumming cleaning fluid and preparation method - Google Patents
Semiconductor silicon wafer degumming cleaning fluid and preparation method Download PDFInfo
- Publication number
- CN105441200A CN105441200A CN201510878691.XA CN201510878691A CN105441200A CN 105441200 A CN105441200 A CN 105441200A CN 201510878691 A CN201510878691 A CN 201510878691A CN 105441200 A CN105441200 A CN 105441200A
- Authority
- CN
- China
- Prior art keywords
- aeo
- pure water
- ethylene diamine
- silicon wafer
- semiconductor silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/364—Organic compounds containing phosphorus containing nitrogen
Abstract
The invention discloses semiconductor silicon wafer degumming cleaning fluid capable of removing semiconductor silicon wafer fixing glue and pollutant at a time. The semiconductor silicon wafer degumming cleaning fluid is prepared from, by mass, 60-90% of amino tri(methylene phosphonic acid), 0.5-5% of sodium diethylhexyl sulfosuccinate, 1-10% of hydrofluoric acid, 1-10% of AEO-9, 1-5% of sodium ethylene diamine tetracetate and the balance pure water. A production method includes the steps of sufficiently dissolving sodium ethylene diamine tetracetate in a fixed volume of pure water, sequentially injecting amino tri(methylene phosphonic acid), sodium diethylhexyl sulfosuccinate and AEO-9 to be stirred for 15 minutes, and adding hydrofluoric acid to be stirred for 30 minutes. Production efficiency is greatly improved, and production cost is reduced.
Description
Technical field
The present invention relates to a kind of scavenging solution, especially a kind of can the semi-conductor silicon chip degumming cleaning liquid of disposable removal semi-conductor silicon chip fixing glue and pollutent and production method.
Background technology
Semi-conductor silicon chip is cut by the cutting facility of specialty and silicon carbide cutting liquid and obtained.Need silicon ingot fixing glue to be fixed on pallet in cutting process, after cutting, just this thoroughly need be removed fixing glue be bonded on silicon chip.Metal ion in cutting process in the grease of mechanical means lubrication, silicon carbide or working fluid and silicon chip contact the oxide skin formed afterwards etc. with air all can cause pollution in various degree to silicon chip, also should remove after dicing, otherwise the quality of silicon chip will be affected.The newborn aqueous acid of current silicon chip producer multiselect comes unstuck, not only consumption is large, and efficiency of coming unstuck is low, while cleaning fixing glue, the pollutents such as above-mentioned greasy dirt, dust, oxide skin and metallic impurity can not be removed in the lump, clean-out system can only be changed, other pollutent is removed in cleaning again, and expend man-hour, cost is high.
Summary of the invention
The present invention is the above-mentioned technical problem in order to solve existing for prior art, provide a kind of can the semi-conductor silicon chip degumming cleaning liquid of disposable removal semi-conductor silicon chip fixing glue and pollutent and production method.
Technical solution of the present invention is: a kind of semi-conductor silicon chip degumming cleaning liquid, it is characterized in that raw materials used and mass percent is as follows: Amino Trimethylene Phosphonic Acid 60 ~ 90%, aerosol-OT salt 0.5 ~ 5%, hydrofluoric acid 1 ~ 10%, AEO-91 ~ 10%, sodium ethylene diamine tetracetate 1 ~ 5% and pure water surplus.
Raw materials used and best in quality per-cent is as follows: Amino Trimethylene Phosphonic Acid 70%, aerosol-OT salt 4%, hydrofluoric acid 5%, AEO-91%, sodium ethylene diamine tetracetate 2% and pure water 18%.
A kind of production method of above-mentioned semi-conductor silicon chip degumming cleaning liquid, it is characterized in that carrying out in accordance with the following steps: first sodium ethylene diamine tetracetate is fully dissolved in quantitative pure water, inject Amino Trimethylene Phosphonic Acid, aerosol-OT salt and AEO-9 successively, stir and add hydrofluoric acid after 15 minutes, then continue stirring 30 minutes.
Raw material sources of the present invention are extensive, and preparation method is simple, the Amino Trimethylene Phosphonic Acid adopted, and there is stronger selectivity in its Lin Yang functional group to Siliciumatom, therefore have excellent cleaning performance for the fixing glue on silicon chip and dust; Aerosol-OT salt has excellent perviousness, can accelerate the removing of fixing glue and dust; Sodium ethylene diamine tetracetate complexation of metal ions, hydrofluoric acid removes oxide skin, AEO-9 emulsification greasy dirt, each component synergy, disposable cleaning can remove the various pollutents such as the fixing glue of silicon chip surface, metallic impurity, oxide compound, dust and greasy dirt, greatly enhance productivity, reduce production cost.
Embodiment
Embodiment 1:
Raw materials used and mass percent is as follows: Amino Trimethylene Phosphonic Acid 70%, aerosol-OT salt 4%, hydrofluoric acid 5%, AEO-9(fatty alcohol ethoxylate) 1%, sodium ethylene diamine tetracetate 2% and pure water 18%.
Production method is as follows: be first dissolved in the pure water of calculated amount by the sodium ethylene diamine tetracetate of calculated amount, fully dissolve; Inject the Amino Trimethylene Phosphonic Acid of calculated amount, aerosol-OT salt and AEO-9 successively, stir 15 minutes, stirring velocity is 200 revs/min; Add the hydrofluoric acid of calculated amount, fully stir 30 minutes, stirring velocity is 200 revs/min.
Embodiment 2:
Raw materials used and mass percent is as follows: Amino Trimethylene Phosphonic Acid 90%, aerosol-OT salt 0.5%, hydrofluoric acid 1%, AEO-91%, sodium ethylene diamine tetracetate 1% and pure water surplus.
Production method is with embodiment 1.
Embodiment 3:
Amino Trimethylene Phosphonic Acid 60%, aerosol-OT salt 5%, hydrofluoric acid 10%, AEO-910%, sodium ethylene diamine tetracetate 1% and pure water surplus.
Embodiment 4:
Amino Trimethylene Phosphonic Acid 60%, aerosol-OT salt 0.5%, hydrofluoric acid 1%, AEO-91%, sodium ethylene diamine tetracetate 5% and pure water surplus.
By the stoste of the embodiment of the present invention 1, embodiment 2, embodiment 3 or embodiment 4, thin up mass concentration 5 ~ 30% is conventionally cleaned, disposable cleaning can remove the various pollutents such as the fixing glue of silicon chip surface, metallic impurity, oxide compound, dust and greasy dirt, afterwards with clear water rinsing once.
Claims (3)
1. a semi-conductor silicon chip degumming cleaning liquid, is characterized in that raw materials used and mass percent is as follows:
Amino Trimethylene Phosphonic Acid 60 ~ 90%, aerosol-OT salt 0.5 ~ 5%, hydrofluoric acid 1 ~ 10%, AEO-91 ~ 10%, sodium ethylene diamine tetracetate 1 ~ 5% and pure water surplus.
2. semi-conductor silicon chip degumming cleaning liquid according to claim 1, is characterized in that raw materials used and mass percent is as follows: Amino Trimethylene Phosphonic Acid 70%, aerosol-OT salt 4%, hydrofluoric acid 5%, AEO-91%, sodium ethylene diamine tetracetate 2% and pure water 18%.
3. the production method of a semi-conductor silicon chip degumming cleaning liquid as claimed in claim 1, it is characterized in that carrying out in accordance with the following steps: first sodium ethylene diamine tetracetate is fully dissolved in quantitative pure water, inject Amino Trimethylene Phosphonic Acid, aerosol-OT salt and AEO-9 successively, stir and add hydrofluoric acid after 15 minutes, then continue stirring 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510878691.XA CN105441200A (en) | 2015-12-04 | 2015-12-04 | Semiconductor silicon wafer degumming cleaning fluid and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510878691.XA CN105441200A (en) | 2015-12-04 | 2015-12-04 | Semiconductor silicon wafer degumming cleaning fluid and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105441200A true CN105441200A (en) | 2016-03-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510878691.XA Pending CN105441200A (en) | 2015-12-04 | 2015-12-04 | Semiconductor silicon wafer degumming cleaning fluid and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105441200A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107353831A (en) * | 2016-05-10 | 2017-11-17 | Jsr株式会社 | Semiconductor processes composition and processing method |
| CN108559639A (en) * | 2018-01-09 | 2018-09-21 | 江苏荣马新能源有限公司 | A kind of cleaning solution for the surface treatment of black silicon cell |
| CN110331030A (en) * | 2019-08-19 | 2019-10-15 | 福建钰融科技有限公司 | A kind of regenerating waste oil degumming agent and its methods for making and using same |
| CN111575124A (en) * | 2020-06-10 | 2020-08-25 | 苏州世华新材料科技股份有限公司 | Circuit board residual glue cleaning agent and preparation method thereof |
| CN112745991A (en) * | 2019-10-31 | 2021-05-04 | 洛阳阿特斯光伏科技有限公司 | Degumming agent and preparation method and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1654713A (en) * | 2004-02-10 | 2005-08-17 | 三星电子株式会社 | Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
| CN101750911A (en) * | 2008-11-28 | 2010-06-23 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
| CN102533470A (en) * | 2011-12-29 | 2012-07-04 | 镇江市港南电子有限公司 | Silicon wafer cleaning liquid |
| CN103571647A (en) * | 2013-10-31 | 2014-02-12 | 合肥中南光电有限公司 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
| CN103923763A (en) * | 2014-04-15 | 2014-07-16 | 常州君合科技有限公司 | Silicon slice detergent and preparation method thereof |
| CN104862134A (en) * | 2015-03-27 | 2015-08-26 | 武汉宜田科技发展有限公司 | Silicon wafer degumming agent, manufacturing method and use method thereof |
-
2015
- 2015-12-04 CN CN201510878691.XA patent/CN105441200A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1654713A (en) * | 2004-02-10 | 2005-08-17 | 三星电子株式会社 | Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
| CN101750911A (en) * | 2008-11-28 | 2010-06-23 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
| CN102533470A (en) * | 2011-12-29 | 2012-07-04 | 镇江市港南电子有限公司 | Silicon wafer cleaning liquid |
| CN103571647A (en) * | 2013-10-31 | 2014-02-12 | 合肥中南光电有限公司 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
| CN103923763A (en) * | 2014-04-15 | 2014-07-16 | 常州君合科技有限公司 | Silicon slice detergent and preparation method thereof |
| CN104862134A (en) * | 2015-03-27 | 2015-08-26 | 武汉宜田科技发展有限公司 | Silicon wafer degumming agent, manufacturing method and use method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107353831A (en) * | 2016-05-10 | 2017-11-17 | Jsr株式会社 | Semiconductor processes composition and processing method |
| CN108559639A (en) * | 2018-01-09 | 2018-09-21 | 江苏荣马新能源有限公司 | A kind of cleaning solution for the surface treatment of black silicon cell |
| CN110331030A (en) * | 2019-08-19 | 2019-10-15 | 福建钰融科技有限公司 | A kind of regenerating waste oil degumming agent and its methods for making and using same |
| CN112745991A (en) * | 2019-10-31 | 2021-05-04 | 洛阳阿特斯光伏科技有限公司 | Degumming agent and preparation method and application thereof |
| CN111575124A (en) * | 2020-06-10 | 2020-08-25 | 苏州世华新材料科技股份有限公司 | Circuit board residual glue cleaning agent and preparation method thereof |
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Application publication date: 20160330 |