CN105039006A - Cleaning agent used for solar grade silicon wafers and preparing method thereof - Google Patents
Cleaning agent used for solar grade silicon wafers and preparing method thereof Download PDFInfo
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- CN105039006A CN105039006A CN201510465534.6A CN201510465534A CN105039006A CN 105039006 A CN105039006 A CN 105039006A CN 201510465534 A CN201510465534 A CN 201510465534A CN 105039006 A CN105039006 A CN 105039006A
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- clean
- out system
- solar energy
- silicon wafer
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 235000012431 wafers Nutrition 0.000 title abstract description 16
- 239000012459 cleaning agent Substances 0.000 title abstract description 8
- 229910021422 solar-grade silicon Inorganic materials 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000003756 stirring Methods 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 239000003112 inhibitor Substances 0.000 claims abstract description 13
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 12
- 239000013543 active substance Substances 0.000 claims description 12
- 239000012752 auxiliary agent Substances 0.000 claims description 11
- 239000008139 complexing agent Substances 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 9
- 239000011707 mineral Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- -1 polyoxyethylene Polymers 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 6
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 6
- 229960004418 trolamine Drugs 0.000 claims description 6
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 5
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 5
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 5
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 5
- 239000003599 detergent Substances 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 17
- 229910021645 metal ion Inorganic materials 0.000 abstract description 10
- 239000006260 foam Substances 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 150000007529 inorganic bases Chemical class 0.000 abstract 2
- 239000004094 surface-active agent Substances 0.000 abstract 2
- 239000002957 persistent organic pollutant Substances 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010865 sewage Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- ONJQDTZCDSESIW-UHFFFAOYSA-N polidocanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ONJQDTZCDSESIW-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a cleaning agent used for solar grade silicon wafers and a preparing method thereof. One hundred parts of the cleaning agents comprise, by weight, 2 parts to 5 parts of inorganic base, 10 parts to 20 parts of surface active agents, 1 part to 5 parts of corrosion inhibitors, 1 part to 5 parts of complex agents, 0.1 part to 0.5 part of assistants and the balance water. The preparing method of the cleaning agent includes the following steps: the water and the surface active agents are firstly mixed, the inorganic base is slowly added in a multi-time and small-amount mode under the condition that stirring is carried out at the rotating speed of 300-500 turns per minute, stirring is continuously carried out for 10-20 minutes, the complex agents, the corrosion inhibitors and the assistants are finally added and stirred to be completely dissolved, and the cleaning agent is obtained. By means of the cleaning agent used for the solar grade silicon wafers, metal ions and various organic pollutants on the surfaces of the silicon wafers can be effectively removed, damage to the silicon wafers is small, the amount of cleaning foam is small, and the cleaning efficiency is high.
Description
Technical field
The present invention relates to field of photovoltaic technology, more specifically relate to a kind of clean-out system for solar energy-level silicon wafer and preparation method thereof.
Background technology
Along with developing rapidly and widespread use of crystal silicon solar batteries, the high quality photovoltaic device of excellent property, good stability is more and more subject to the favor in market.Silicon chip is as the core component of solar cell, and its various performance parameters such as surface cleanliness, surface state directly affects the generating efficiency of solar cell.Silicon chip is after multi-wire saw, there is the contaminations miscellaneous such as organism, inorganics, particle, metal ion in surface, various contamination is also not quite similar in the existence form of silicon chip surface, and therefore, the contamination adopting which kind of clean-out system cleaning so complicated is most important.
The following problem of silicon slice detergent ubiquity commercially available at present: one is produce foam in cleaning process greatly, needs multiple tracks rinsing process, waste water resource, also adds difficulty for follow-up sewage disposal; Two is that the alkalescence of cleaning initial stage clean-out system is excessively strong, makes silicon chip surface have excessive erosion phenomenon to occur, occurs excessive erosion sheet; Three is weak to the removal power of metal ion, especially Cu, Fe, Ni, and these metal ions are easy to be diffused into inner formation deep energy level deathnium from silicon chip surface; The clean rate and good article rate that cause silicon chip all reduce by the problems referred to above, finally affect electricity conversion.Therefore, for efficient solar battery, the surface treatment of silicon chip is very crucial.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention be exactly how effectively to remove solar silicon wafers work in-process produce organism stain, metal ion stain and other particle contamination, and make cleaning foam low, rinsing process is few, and cleaning efficiency is high, and provides a kind of clean-out system for solar energy-level silicon wafer.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of clean-out system for solar energy-level silicon wafer, this clean-out system comprises the raw material of following weight part: mineral alkali 2-5 part, tensio-active agent 10-20 part, corrosion inhibitor 1-5 part, complexing agent 1-5 part, auxiliary agent 0.1-0.5 part, water adds to 100 parts.
Preferably, described clean-out system comprises the raw material of following weight part: mineral alkali 2.5-4 part, tensio-active agent 12-18 part, corrosion inhibitor 1-3 part, complexing agent 1.5-3 part, and auxiliary agent 0.2-0.4 part, water adds to 100 parts.
Preferably, described mineral alkali is the one of KOH and NaOH or two kinds.
Preferably, described tensio-active agent is the one of fatty alcohol-polyoxyethylene ether (AEO7, AEO9) and alkylphenol polyoxyethylene (OP-9, OP-10) or two kinds.
Preferably, described corrosion inhibitor is one or more of diethanolamine, trolamine and quadrol.Above-mentioned corrosion inhibitor is amine organic bases, and it has the ability of chelated metal ions, and after can reducing cleaning, the metal ion of silicon chip surface stains; Also there is pH value surge capability, in cleaning process, enough make the pH value of clean-out system remain in stable scope, prevent mineral alkali to the excessive erosion of silicon chip, cause the defective productss such as hickie; And the foam that can effectively suppress tensio-active agent to produce, can rinsing process be reduced, reduce the consumption of rinse water, alleviate the burden of sewage disposal.
Preferably, described complexing agent is the one of disodium ethylene diamine tetraacetate and diethylene triamine pentacetic acid (DTPA) or two kinds.
Preferably, described auxiliary agent is one or more of ethanol, Virahol and propylene glycol.
Preferably, described water is pure water, and its resistivity is 18M Ω CM.Adopt pure water that the metal ion such as calcium, magnesium, aluminium in water can be avoided the pollution of silicon chip, improve the service efficiency of clean-out system.
Preferably, described clean-out system comprises the raw material of following weight part: KOH2.5-3 part, alkylphenol polyoxyethylene (OP-10) 12-15 part, fatty alcohol-polyoxyethylene ether (AEO-9) 5-8 part, quadrol 1-2 part, trolamine 2-3 part, diethylene triamine pentacetic acid (DTPA) 1.5-2 part, disodium ethylene diamine tetraacetate 1-2 part, Virahol 0.2-0.3 part, water adds to 100 parts.
The present invention is raw materials used is commercially available buying.
Present invention also offers the preparation method of the described clean-out system for solar energy-level silicon wafer, the method comprises the following steps: first by water and tensio-active agent mixing, under stirring at rotating speed 300-500 rev/min, slowly add mineral alkali, continue to stir 10-20 minute, finally add complexing agent, corrosion inhibitor and auxiliary agent, stir and dissolve completely, obtain described clean-out system.The untoward reactions such as tensio-active agent in preparation process loses activity, auxiliary agent volatilization, clean-out system local generation amount of heat occur to adopt above-mentioned preparation method effectively to avoid.
(3) beneficial effect
Clean-out system of the present invention is applied to the high-efficiency washing of solar energy-level silicon wafer, not only can effectively remove organic and inorganic pollution, and can remove the metal ion on silicon top layer, guarantees the electrical property of cell piece prepared by rear road, reliability and yield rate; Cleaning agent formula of the present invention is simple, and cleaning performance is good, and foam is low, to silicon wafer damage-free.
Embodiment
Below in conjunction with embodiment, embodiments of the present invention are described in further detail.Following examples for illustration of the present invention, but can not be used for limiting the scope of the invention.
Embodiment 1
Clean-out system comprises the raw material of following weight part:
The preparation method of above-mentioned clean-out system is as follows: first by pure water and tensio-active agent fatty alcohol-polyoxyethylene ether and alkylphenol polyoxyethylene mixing, under rotating speed 400 revs/min stirs, slowly add KOH repeatedly on a small quantity, continue stirring 20 minutes, finally add complexing agent diethylene triamine pentacetic acid (DTPA); Corrosion inhibitor trolamine, quadrol and auxiliary agent Virahol, stir and dissolve completely, obtain clean-out system.
Embodiment 2
The preparation method of above-mentioned clean-out system is as follows: first by pure water and tensio-active agent fatty alcohol-polyoxyethylene ether and alkylphenol polyoxyethylene mixing, under rotating speed 500 revs/min stirs, slowly add KOH repeatedly on a small quantity, continue stirring 10 minutes, finally add complexing agent diethylene triamine pentacetic acid (DTPA) and disodium ethylene diamine tetraacetate; Corrosion inhibitor trolamine and auxiliary agent ethanol and propylene glycol, stir and dissolve completely, obtain clean-out system.
Embodiment 3
In the present embodiment, concrete formula is as follows:
Embodiment 4
In the present embodiment, concrete formula is as follows:
Embodiment 5
In the present embodiment, concrete formula is as follows:
Solar energy-level silicon wafer efficient cleaner of the present invention is a kind of aqueous cleaning agent, gets the above-mentioned clean-out system prepared during cleaning, in mass ratio with pure water dilutes can use at 1: 50.Simple to operate when solar energy-level silicon wafer efficient cleaner of the present invention uses, be easy to preserve.Do washing test, the silicon chip of cleaning is without hickie, water mark, and do not destroy the performance of silicon chip, clean rate is greater than 99.4%.
With the present invention and commercially available two kinds of clean-out system cleaning silicon chips, its cleaning performance is as table 1:
Table 1: Wafer Cleaning effect
In table, commercially available clean-out system is conventional silicon slice detergent, the following problem of their ubiquities: one is produce foam in cleaning process greatly, needs multiple tracks rinsing process, waste water resource, also adds difficulty for follow-up sewage disposal; Two is that the alkalescence of cleaning initial stage clean-out system is excessively strong, makes silicon chip surface have excessive erosion phenomenon to occur, easily occurs excessive erosion sheet; Three is weak to the removal power of metal ion, especially removes Cu, Fe, Ni ion weak.As can be seen from table, clean-out system net effect of the present invention is obviously better than existing clean-out system.
Above embodiment is only for illustration of the present invention, but not limitation of the present invention.Although with reference to embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, various combination, amendment or equivalent replacement are carried out to technical scheme of the present invention, do not depart from the spirit and scope of technical solution of the present invention, all should be encompassed in the middle of right of the present invention.
Claims (10)
1. for a clean-out system for solar energy-level silicon wafer, it is characterized in that, this clean-out system comprises the raw material of following weight part: mineral alkali 2-5 part, tensio-active agent 10-20 part, corrosion inhibitor 1-5 part, complexing agent 1-5 part, and auxiliary agent 0.1-0.5 part, water adds to 100 parts.
2. solar energy level silicon chip detergent according to claim 1, is characterized in that, described clean-out system comprises the raw material of following weight part: mineral alkali 2.5-4 part, tensio-active agent 12-18 part, corrosion inhibitor 1-3 part, complexing agent 1.5-3 part, auxiliary agent 0.2-0.4 part, water adds to 100 parts.
3. the clean-out system for solar energy-level silicon wafer according to claim 1 and 2, is characterized in that, described mineral alkali is the one of KOH and NaOH or two kinds.
4. the clean-out system for solar energy-level silicon wafer according to claim 1 and 2, is characterized in that, described tensio-active agent is the one of fatty alcohol-polyoxyethylene ether and alkylphenol polyoxyethylene or two kinds.
5. the clean-out system for solar energy-level silicon wafer according to claim 1 and 2, is characterized in that, described corrosion inhibitor is one or more of diethanolamine, trolamine and quadrol.
6. the clean-out system for solar energy-level silicon wafer according to claim 1 and 2, is characterized in that, described complexing agent is the one of disodium ethylene diamine tetraacetate and diethylene triamine pentacetic acid (DTPA) or two kinds.
7. the clean-out system for solar energy-level silicon wafer according to claim 1 and 2, is characterized in that, described auxiliary agent is one or more of ethanol, Virahol and propylene glycol.
8. the clean-out system for solar energy-level silicon wafer according to any one of claim 1-7, is characterized in that, described water is pure water.
9. the clean-out system for solar energy-level silicon wafer according to any one of claim 1-8, it is characterized in that, described clean-out system comprises the raw material of following weight part: KOH2.5-3 part, alkylphenol polyoxyethylene 12-15 part, fatty alcohol-polyoxyethylene ether 5-8 part, quadrol 1-2 part, trolamine 2-3 part, diethylene triamine pentacetic acid (DTPA) 1.5-2 part, disodium ethylene diamine tetraacetate 1-2 part, Virahol 0.2-0.3 part, water adds to 100 parts.
10. the preparation method of the clean-out system for solar energy-level silicon wafer described in any one of claim 1 to 9, it is characterized in that, the method comprises the following steps: first by water and tensio-active agent mixing, under stirring at rotating speed 300-500 rev/min, slowly add mineral alkali, continue to stir 10-20 minute, finally add complexing agent, corrosion inhibitor and auxiliary agent, stir and dissolve completely, obtain described clean-out system.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510465534.6A CN105039006B (en) | 2015-07-31 | 2015-07-31 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
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| CN201510465534.6A CN105039006B (en) | 2015-07-31 | 2015-07-31 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
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| CN105039006A true CN105039006A (en) | 2015-11-11 |
| CN105039006B CN105039006B (en) | 2018-05-15 |
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| CN201510465534.6A Expired - Fee Related CN105039006B (en) | 2015-07-31 | 2015-07-31 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105505643A (en) * | 2015-12-23 | 2016-04-20 | 电子科技大学 | Silicon wafer cleaner and silicon wafer cleaning method |
| CN106479700A (en) * | 2016-10-12 | 2017-03-08 | 佛山迅拓奥科技有限公司 | A kind of semiconductor silicon material lapping liquid abluent and preparation method thereof |
| CN106675811A (en) * | 2016-12-30 | 2017-05-17 | 德清丽晶能源科技有限公司 | Silicon wafer cleaning agent |
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| CN107488862A (en) * | 2017-08-29 | 2017-12-19 | 天津普罗米新材料有限公司 | A kind of zinc-plated punching press shell scavenger specially |
| CN107686776A (en) * | 2016-08-03 | 2018-02-13 | 天津鑫泰士特电子有限公司 | Solar energy level silicon section cleaning agent and preparation method thereof |
| CN107987982A (en) * | 2017-11-15 | 2018-05-04 | 常州高特新材料有限公司 | A kind of silicon chip cleaning liquid |
| CN108753478A (en) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | A kind of single crystal silicon semiconductor cleaning agent and its cleaning method |
| CN111330903A (en) * | 2020-03-26 | 2020-06-26 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
| CN113773920A (en) * | 2021-09-16 | 2021-12-10 | 广东金湾高景太阳能科技有限公司 | Silicon wafer single-component cleaning agent and preparation method thereof |
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| CN105505643A (en) * | 2015-12-23 | 2016-04-20 | 电子科技大学 | Silicon wafer cleaner and silicon wafer cleaning method |
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| CN106479700A (en) * | 2016-10-12 | 2017-03-08 | 佛山迅拓奥科技有限公司 | A kind of semiconductor silicon material lapping liquid abluent and preparation method thereof |
| CN106675811A (en) * | 2016-12-30 | 2017-05-17 | 德清丽晶能源科技有限公司 | Silicon wafer cleaning agent |
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| CN107488862A (en) * | 2017-08-29 | 2017-12-19 | 天津普罗米新材料有限公司 | A kind of zinc-plated punching press shell scavenger specially |
| CN107987982A (en) * | 2017-11-15 | 2018-05-04 | 常州高特新材料有限公司 | A kind of silicon chip cleaning liquid |
| CN108753478A (en) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | A kind of single crystal silicon semiconductor cleaning agent and its cleaning method |
| CN111330903A (en) * | 2020-03-26 | 2020-06-26 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
| CN111330903B (en) * | 2020-03-26 | 2021-08-17 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
| CN113773920A (en) * | 2021-09-16 | 2021-12-10 | 广东金湾高景太阳能科技有限公司 | Silicon wafer single-component cleaning agent and preparation method thereof |
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| CN105039006B (en) | 2018-05-15 |
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