CN105039006B - A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof - Google Patents
A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof Download PDFInfo
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- CN105039006B CN105039006B CN201510465534.6A CN201510465534A CN105039006B CN 105039006 B CN105039006 B CN 105039006B CN 201510465534 A CN201510465534 A CN 201510465534A CN 105039006 B CN105039006 B CN 105039006B
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- 239000012459 cleaning agent Substances 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 9
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 4
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 4
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 4
- 150000002191 fatty alcohols Chemical class 0.000 claims description 4
- YWLMQDOSWZXWMI-UHFFFAOYSA-N acetic acid ethene Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C=C YWLMQDOSWZXWMI-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 17
- 238000003756 stirring Methods 0.000 abstract description 12
- 239000004094 surface-active agent Substances 0.000 abstract description 10
- 239000012752 auxiliary agent Substances 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- 239000003112 inhibitor Substances 0.000 abstract description 9
- 239000008139 complexing agent Substances 0.000 abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 abstract description 8
- 150000007529 inorganic bases Chemical class 0.000 abstract description 7
- 239000006260 foam Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- -1 amine organic base Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010865 sewage Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- 206010067484 Adverse reaction Diseases 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000000373 fatty alcohol group Chemical group 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- ONJQDTZCDSESIW-UHFFFAOYSA-N polidocanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ONJQDTZCDSESIW-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof.The cleaning agent includes the raw material of following parts by weight：25 parts of inorganic base, 10 20 parts of surfactant, 15 parts of corrosion inhibitor, 15 parts of complexing agent, 0.1 0.5 parts of auxiliary agent, water adds to 100 parts.The cleaning agent preparation method comprises the following steps：First water and surfactant are mixed, it is repeatedly a small amount of to be slowly added to inorganic base under 300 500 revs/min of stirrings of rotating speed, continue stirring 10 20 minutes, be eventually adding complexing agent, corrosion inhibitor and auxiliary agent, stirring is completely dissolved, up to the cleaning agent.The cleaning agent that the present invention is used for solar energy-level silicon wafer can effectively remove the metal ion of silicon chip surface, various organic pollutions, small to silicon chip damage, and cleaning foam is few, and cleaning efficiency is high.
Description
Technical field
The present invention relates to photovoltaic technology field, is more particularly to a kind of cleaning agent for solar energy-level silicon wafer and its preparation
Method.
Background technology
With crystal silicon solar batteries develop rapidly and extensive use, the good high quality photovoltaic of function admirable, stability
Device is increasingly favored be subject to market.Core component of the silicon chip as solar cell, its surface cleanliness, surface state etc. are each
Item performance parameter directly affects the generating efficiency of solar cell.Silicon chip is after multi-wire saw, and there are organic matter, inorganic on surface
The miscellaneous contamination such as thing, particle, metal ion, various contaminations are also not quite similar in the existence form of silicon chip surface, therefore,
It is most important using the so complicated contamination of which kind of cleaning agent cleaning.
The presently commercially available following problem of silicon slice detergent generally existing：First, generation foam is big in cleaning process, need
Multiple tracks rinsing process is wanted, waste water resource, also adds difficulty for follow-up sewage disposal；Second, the alkali of cleaning cleaning agent at initial stage
Property is too strong, silicon chip surface is had excessive erosion phenomenon, excessive erosion piece occurs；Third, the removal power to metal ion is weak, especially
It is Cu, Fe, Ni, these metal ions, which are easy to be diffused into from silicon chip surface, is internally formed deep energy level complex centre；The above problem
All the clean rate and yields that cause silicon chip are reduced, finally influence electricity conversion.Therefore, for efficient solar battery and
Speech, the surface treatment of silicon chip are very crucial.
The content of the invention
(1) technical problems to be solved
The technical problem to be solved in the present invention is to how effectively remove the organic matter of solar silicon wafers work in-process generation
Stain, metal ion stains and other particle contaminations, and makes that cleaning foam is low, and rinsing process is few, cleaning efficiency is high, and provides one
Cleaning agent of the kind for solar energy-level silicon wafer.
(2) technical solution
In order to solve the above technical problem, the present invention provides a kind of cleaning agent for solar energy-level silicon wafer, the cleaning
Agent includes the raw material of following parts by weight：2-5 parts of inorganic base, 10-20 parts of surfactant, 1-5 parts of corrosion inhibitor, complexing agent 1-
5 parts, 0.1-0.5 parts of auxiliary agent, water adds to 100 parts.
Preferably, the cleaning agent includes the raw material of following parts by weight：2.5-4 parts of inorganic base, surfactant 12-18
Part, 1-3 parts of corrosion inhibitor, 1.5-3 parts of complexing agent, 0.2-0.4 parts of auxiliary agent, water adds to 100 parts.
Preferably, the inorganic base is one kind of KOH and NaOH or two kinds.
Preferably, the surfactant is fatty alcohol polyoxyethylene ether (AEO7, AEO9) and alkylphenol-polyethenoxy
One kind of ether (OP-9, OP-10) or two kinds.
Preferably, the corrosion inhibitor is the one or more of diethanol amine, triethanolamine and ethylenediamine.Above-mentioned corruption
Corrosion inhibitor is amine organic base, its ability with chelated metal ions, can reduce the metal of silicon chip surface after cleaning
Ion stains；Also there is pH value buffer capacity, the pH value of cleaning agent is maintained in stable scope in cleaning process, prevent
Only excessive erosion of the inorganic base to silicon chip, causes the defective products such as hickie；And can effectively suppress the foam of surfactant generation,
Rinsing process can be reduced, reduces the dosage of ejected wash water, mitigates the burden of sewage disposal.
Preferably, the complexing agent be disodium ethylene diamine tetraacetate and diethylene triamine pentacetic acid (DTPA) one kind or two kinds.
Preferably, the auxiliary agent is the one or more of ethanol, isopropanol and propane diols.
Preferably, the water is pure water, its resistivity is 18M Ω CM.Can be avoided using pure water calcium in water, magnesium,
Pollution of the metal ions such as aluminium to silicon chip, improves the service efficiency of cleaning agent.
Preferably, the cleaning agent includes the raw material of following parts by weight：2.5-3 parts of KOH, alkylphenol polyoxyethylene ether
(OP-10) 12-15 parts, 5-8 parts of fatty alcohol polyoxyethylene ether (AEO-9), 1-2 parts of ethylenediamine, 2-3 parts of triethanolamine, diethyl
1.5-2 parts of alkene pentaacetic acid, 1-2 parts of disodium ethylene diamine tetraacetate, 0.2-0.3 parts of isopropanol, water adds to 100 parts.
The raw materials used present invention is commercially available.
Present invention also offers the preparation method of the cleaning agent for solar energy-level silicon wafer, this method includes following
Step：First water and surfactant are mixed, under 300-500 revs/min of stirring of rotating speed, inorganic base is slowly added to, continues to stir
10-20 minutes, complexing agent, corrosion inhibitor and auxiliary agent are eventually adding, stirring is completely dissolved, up to the cleaning agent.Using
Above-mentioned preparation method can effectively avoid the surfactant in preparation process lose activity, auxiliary agent volatilization, cleaning agent locally produce
The adverse reactions such as amount of heat occur.
(3) beneficial effect
Cleaning agent of the present invention is applied to the high-efficiency washing of solar energy-level silicon wafer, not only can effectively remove organic and inorganic dirt
Dye, and the metal ion on silicon top layer can be removed, it is ensured that electrical property, reliability and the yield rate of cell piece prepared by rear road；
The cleaning agent formula of the present invention is simple, and cleaning performance is good, and foam is low, to silicon wafer damage-free.
Embodiment
Embodiments of the present invention are described in further detail with reference to embodiment.Following embodiments are used to illustrate this
Invention, but cannot be used for limiting the scope of the invention.
Embodiment 1
Cleaning agent includes the raw material of following parts by weight：
The preparation method of above-mentioned cleaning agent is as follows：First by pure water and surfactant fatty alcohol polyoxyethylene ether and alkyl phenol
Polyoxyethylene ether mixes, repeatedly a small amount of to be slowly added to KOH under the stirring of 400 revs/min of rotating speed, continues stirring 20 minutes, finally
Add complexing agent diethylene triamine pentacetic acid (DTPA)；Corrosion inhibitor triethanolamine, ethylenediamine and auxiliary agent isopropanol, stirring are completely molten
Solution, up to cleaning agent.
Embodiment 2
The preparation method of above-mentioned cleaning agent is as follows：First by pure water and surfactant fatty alcohol polyoxyethylene ether and alkyl phenol
Polyoxyethylene ether mixes, repeatedly a small amount of to be slowly added to KOH under the stirring of 500 revs/min of rotating speed, continues stirring 10 minutes, finally
Add complexing agent diethylene triamine pentacetic acid (DTPA) and disodium ethylene diamine tetraacetate；Corrosion inhibitor triethanolamine and auxiliary agent ethanol and
Propane diols, stirring are completely dissolved, up to cleaning agent.
Embodiment 3
Specific formula is as follows in the present embodiment：
Embodiment 4
Specific formula is as follows in the present embodiment：
Embodiment 5
Specific formula is as follows in the present embodiment：
Solar energy-level silicon wafer efficient cleaner of the present invention is a kind of aqueous cleaning agent, and when cleaning takes above-mentioned prepared cleaning
Agent, can be used with the dilution of pure water in mass ratio 1: 50.Solar energy-level silicon wafer efficient cleaner of the present invention is easy to operate when using,
It is easy to preserve.Cleaning experiment is done, the silicon chip of cleaning does not destroy the performance of silicon chip, clean rate and be more than 99.4% without hickie, water mark.
With of the invention and commercially available two kinds of cleaning agent cleaning silicon chips, its cleaning performance such as table 1：
Table 1：Wafer Cleaning effect
Commercially available cleaning agent is to commonly use silicon slice detergent, the following problem of their generally existings in table：First, cleaning process
Middle generation foam is big, it is necessary to which multiple tracks rinsing process, waste water resource, also adds difficulty for follow-up sewage disposal；It is second, clear
The alkaline too strong of cleaning agent at initial stage is washed, silicon chip surface is had excessive erosion phenomenon, excessive erosion piece easily occurs；Third, to metal from
The removal power of son is weak, and it is weak especially to remove Cu, Fe, Ni ion.Cleaning agent resultant effect of the present invention is obvious it can be seen from table
Better than existing cleaning agent.
Embodiment of above is merely to illustrate the present invention, rather than limitation of the present invention.Although with reference to embodiment to this hair
It is bright to be described in detail, it will be understood by those of ordinary skill in the art that, to technical scheme carry out it is various combination,
Modification or equivalent substitution, without departure from the spirit and scope of technical solution of the present invention, the right that should all cover in the present invention is wanted
Ask among scope.
Claims (1)
1. a kind of cleaning agent for solar energy-level silicon wafer, it is characterised in that the cleaning agent includes the raw material of following parts by weight：
KOH3%, fatty alcohol polyoxyethylene ether 5%, alkylphenol polyoxyethylene ether 12%, triethanolamine 2%, ethylenediamine 1%, two
Ethene pentaacetic acid 1%, disodium ethylene diamine tetraacetate 1%, isopropanol 0.3%, surplus are pure water.
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| CN201510465534.6A CN105039006B (en) | 2015-07-31 | 2015-07-31 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
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| CN201510465534.6A CN105039006B (en) | 2015-07-31 | 2015-07-31 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
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| CN105039006A CN105039006A (en) | 2015-11-11 |
| CN105039006B true CN105039006B (en) | 2018-05-15 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105505643A (en) * | 2015-12-23 | 2016-04-20 | 电子科技大学 | Silicon wafer cleaner and silicon wafer cleaning method |
| CN107686776A (en) * | 2016-08-03 | 2018-02-13 | 天津鑫泰士特电子有限公司 | Solar energy level silicon section cleaning agent and preparation method thereof |
| CN106479700A (en) * | 2016-10-12 | 2017-03-08 | 佛山迅拓奥科技有限公司 | A kind of semiconductor silicon material lapping liquid abluent and preparation method thereof |
| CN106675811A (en) * | 2016-12-30 | 2017-05-17 | 德清丽晶能源科技有限公司 | Silicon wafer cleaning agent |
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| CN107488862A (en) * | 2017-08-29 | 2017-12-19 | 天津普罗米新材料有限公司 | A kind of zinc-plated punching press shell scavenger specially |
| CN107987982A (en) * | 2017-11-15 | 2018-05-04 | 常州高特新材料有限公司 | A kind of silicon chip cleaning liquid |
| CN108753478A (en) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | A kind of single crystal silicon semiconductor cleaning agent and its cleaning method |
| CN111330903B (en) * | 2020-03-26 | 2021-08-17 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
| CN113773920A (en) * | 2021-09-16 | 2021-12-10 | 广东金湾高景太阳能科技有限公司 | Silicon wafer single-component cleaning agent and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
| CN102952650A (en) * | 2012-11-16 | 2013-03-06 | 绍兴拓邦电子科技有限公司 | Washing agent and washing process for Solar solar cell silicon wafer washing agent and washing process thereof |
| CN103525573A (en) * | 2013-10-15 | 2014-01-22 | 上海尤希路化学工业有限公司 | Special cleaning solution for high-performance photovoltaic silicon chips |
| CN103571647A (en) * | 2013-10-31 | 2014-02-12 | 合肥中南光电有限公司 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
| CN103710179A (en) * | 2013-12-09 | 2014-04-09 | 长沙艾森设备维护技术有限公司 | Cleaning agent for solar energy monocrystalline silicon wafer |
-
2015
- 2015-07-31 CN CN201510465534.6A patent/CN105039006B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
| CN102952650A (en) * | 2012-11-16 | 2013-03-06 | 绍兴拓邦电子科技有限公司 | Washing agent and washing process for Solar solar cell silicon wafer washing agent and washing process thereof |
| CN103525573A (en) * | 2013-10-15 | 2014-01-22 | 上海尤希路化学工业有限公司 | Special cleaning solution for high-performance photovoltaic silicon chips |
| CN103571647A (en) * | 2013-10-31 | 2014-02-12 | 合肥中南光电有限公司 | Solar grade silicon wafer water-based cleaning agent and preparation method thereof |
| CN103710179A (en) * | 2013-12-09 | 2014-04-09 | 长沙艾森设备维护技术有限公司 | Cleaning agent for solar energy monocrystalline silicon wafer |
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