CN103710179A - Cleaning agent for solar energy monocrystalline silicon wafer - Google Patents
Cleaning agent for solar energy monocrystalline silicon wafer Download PDFInfo
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- CN103710179A CN103710179A CN201310663959.9A CN201310663959A CN103710179A CN 103710179 A CN103710179 A CN 103710179A CN 201310663959 A CN201310663959 A CN 201310663959A CN 103710179 A CN103710179 A CN 103710179A
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Abstract
The invention discloses a cleaning agent for a solar energy monocrystalline silicon wafer. The cleaning agent comprises the following components of potassium hydroxide, a surfactant, a penetrating agent and a chelating agent. The cleaning agent has a good cleaning effect for the monocrystalline silicon wafer and is low in use cost. Compared with other silicon wafer-cleaning agents, the cleaning agent provided by the invention can simplify a cleaning process, does not pollute the environment and has no harm to human health.
Description
Technical field
The present invention relates to a kind of solar monocrystalline silicon slice clean-out system, belong to Wafer Cleaning and protection field.
Background technology
Monocrystaline silicon solar cell is most widely used a kind of environment-friendly battery with fastest developing speed, and its complete processing has been shaped and has been widely used: by silicon single crystal rod dicing, then carry out just throwing, making herbs into wool.After silicon chip excision forming, the bits foam on its surface and greasy dirt need be cleaned, then carry out next process.As silicon chip, before just throwing making herbs into wool, do not clean, will cause making herbs into wool rear surface to be grown dim, so that product rejection.Therefore processing requirement silicon chip needs to clean to the consistent grey of color even before just throwing making herbs into wool, but current clean-out system is used HF acid or highly basic to clean more, the serious and contaminate environment to silicon slice corrosion, harm operator ' s health, affects next step technological operation.
Summary of the invention:
The present invention is directed to silicon slice detergent of the prior art exists cleaning not thorough, to silicon wafer seriously corroded, cost is high, the defects such as environmental pollution, object is to be to provide a kind of effective to cleaning monocrystalline silicon, use cost is low, can simplify cleaning, and free from environmental pollution and solar monocrystalline silicon slice clean-out system that be detrimental to health.
The invention provides a kind of solar monocrystalline silicon slice clean-out system, every 100g clean-out system comprises following component: potassium hydroxide 2～15g, tensio-active agent 1～5g, permeate agent 1～3g, sequestrant 1～5g.
Preferred solar monocrystalline silicon slice clean-out system, every 100g clean-out system comprises following component: potassium hydroxide 8～10g, tensio-active agent 1～3g, permeate agent 1g, sequestrant 1～3g.
Most preferred solar monocrystalline silicon slice clean-out system, every 100g clean-out system comprises following component: potassium hydroxide 9g, tensio-active agent 2g, permeate agent 1g, sequestrant 1g.
Described tensio-active agent is preferably alkyl-glucoside (APG) and/or isomery polyoxyethylenated alcohol.
Described permeate agent is preferably isooctyl alcohol Soxylat A 25-7.
Described sequestrant is preferably one or more in EDTA4Na, EDTA2Na, ammonium citrate.
Described 10～20 times of uses of clean-out system dilution.
Clean-out system preparation of the present invention and the method for cleaning silicon wafer:
1, the preparation of clean-out system: by 2～15 parts, mass parts potassium hydroxide, 1～5 part, tensio-active agent and permeate agent 1～3 are water-soluble, be made into total mass part and be the A component of 50 parts, 1～5 part of sequestrant is water-soluble, being made into total mass part is 50 parts of B components, during use, A component and B component are mixed, after diluting 10～20 times, be mixed with working fluid;
2, the using method of clean-out system: monocrystalline silicon piece is placed in to the working fluid of being prepared by step 1 of 50～60 ℃, first, by ultrasonic prewashing, solid insoluble is rinsed out, then carry out ultrasonic cleaning, finally carry out repeatedly clear water rinsing.
Beneficial effect of the present invention: use HF acid or highly basic to clean for silicon wafer cleaning process of the prior art, exist cleaning not thorough, the defect that easily causes silicon chip surface to grow dim, a kind of pair of alkali two-component solar cleaning monocrystalline silicon agent of the special research and development of the present invention, it is dirty that this clean-out system can thoroughly be removed the surface of monocrystalline silicon piece, and little to monocrystalline silicon sheet surface corrosion, can effectively prevent that fine-hair maring using monocrystalline silicon slice rear surface from growing dim, greatly improved the qualification rate of product; This clean-out system acid consumpting alkali amount is few simultaneously, and can dilute use, greatly reduces the use cost of clean-out system; In addition, use this clean-out system use procedure simple, simplified cleaning step in the past, also effectively prevent the pollution to environment.
Embodiment
Following examples are intended to further illustrate the present invention, rather than limit the scope of the invention.
The test materials that embodiment 1～4 selects: 125
#monocrystalline silicon piece, specimen size is: 125mm * 125mm * 2mm.
Embodiment 1
1, the preparation of clean-out system: by mass parts potassium hydroxide 8g, isomery alcohol polyoxy ether 1g and isooctyl alcohol Soxylat A 25-7 1g are dissolved in 40g water, being made into total mass part is the A component of 50g, sequestrant EDTA4Na3g is dissolved in to 47g water, being made into total mass is the B component of 50g, during use, A component and B component are mixed, after diluting 15 times, be mixed with working fluid;
2, clean the method for silicon wafer: monocrystalline silicon piece is placed in to the working fluid of 1kg step 1 preparation of 50 ℃, first, by ultrasonic prewashing, solid insoluble is rinsed out, then carry out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in Table 1.
Embodiment 2
1, the preparation of clean-out system: by mass parts potassium hydroxide 9g, isomery alcohol polyoxy ether 2g and isooctyl alcohol Soxylat A 25-7 1g are dissolved in 38g water, being made into total mass part is the A component of 50g, sequestrant EDTA2Na1g is dissolved in to 49g water, being made into total mass is the B component of 50g, during use, A component and B component are mixed, after diluting 20 times, be mixed with working fluid;
2, clean the method for silicon wafer: monocrystalline silicon piece is placed in 55 ℃ the preparation of 1kg step 1 working fluid, first, by ultrasonic prewashing, solid insoluble is rinsed out, then carries out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in Table 1.
Embodiment 3
1, the preparation of clean-out system: by mass parts potassium hydroxide 8g, APG2g and isooctyl alcohol Soxylat A 25-7 1g are dissolved in 39g water, being made into total mass part is the A component of 50g, sequestrant ammonium citrate 2g is dissolved in to 48g water, being made into total mass is the B component of 50g, during use, A component and B component are mixed, after diluting 10 times, be mixed with working fluid;
2, clean the method for silicon wafer: monocrystalline silicon piece is placed in 60 ℃ the preparation of 1kg step 1 working fluid, first, by ultrasonic prewashing, solid insoluble is rinsed out, then carries out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in Table 1.
Embodiment 4
1, the preparation of clean-out system: by mass parts potassium hydroxide 10g, APG3g and isooctyl alcohol Soxylat A 25-7 1g are dissolved in 36g water, being made into total mass part is the A component of 50g, sequestrant EDTA4Na1g is dissolved in to 49g water, being made into total mass is the B component of 50g, during use, A component and B component are mixed, after diluting 15 times, be mixed with working fluid;
2, clean the method for silicon wafer: monocrystalline silicon piece is placed in to the working fluid of 1kg step 1 preparation of 60 ℃, first, by ultrasonic prewashing, solid insoluble is rinsed out, then carry out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in Table 1.
The cleaning performance of the clean-out system cleaning silicon chip of table 1 embodiment 1～4
Experimental result shows: the cleaning of carrying out with the present invention, and more than 99.5% monocrystalline silicon sheet surface is without vestige, without scratching, and surface-brightening is seamless, and making herbs into wool is even under normal operation after entering next step making herbs into wool operation.
Claims (7)
1. a solar monocrystalline silicon slice clean-out system, is characterized in that, every 100g clean-out system comprises following component: potassium hydroxide 2～15g, tensio-active agent 1～5g, permeate agent 1～3g, sequestrant 1～5g.
2. solar monocrystalline silicon slice clean-out system as claimed in claim 1, is characterized in that, every 100g clean-out system comprises following component: potassium hydroxide 8～10g, tensio-active agent 1～3g, permeate agent 1g, sequestrant 1～3g.
3. solar monocrystalline silicon slice clean-out system as claimed in claim 2, is characterized in that, every 100g clean-out system comprises following component: potassium hydroxide 9g, tensio-active agent 2g, permeate agent 1g, sequestrant 1g.
4. solar monocrystalline silicon slice clean-out system as claimed in claim 3, is characterized in that, described tensio-active agent is alkyl-glucoside and/or isomery polyoxyethylenated alcohol.
5. solar monocrystalline silicon slice clean-out system as claimed in claim 3, is characterized in that, described permeate agent is isooctyl alcohol Soxylat A 25-7.
6. solar monocrystalline silicon slice clean-out system as claimed in claim 3, is characterized in that, described sequestrant is one or more in EDTA4Na, EDTA2Na, ammonium citrate.
7. the solar monocrystalline silicon slice clean-out system as described in claim 1～6 any one, is characterized in that, described 10～20 times of uses of clean-out system dilution.
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| CN201310663959.9A CN103710179B (en) | 2013-12-09 | 2013-12-09 | A kind of solar monocrystalline silicon slice clean-out system |
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| CN201310663959.9A CN103710179B (en) | 2013-12-09 | 2013-12-09 | A kind of solar monocrystalline silicon slice clean-out system |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105039006A (en) * | 2015-07-31 | 2015-11-11 | 陕西国防工业职业技术学院 | Cleaning agent used for solar grade silicon wafers and preparing method thereof |
| CN106350262A (en) * | 2016-08-28 | 2017-01-25 | 广西小草信息产业有限责任公司 | Detergent for silicon wafer in solar cell system and preparation method of detergent |
| CN108300583A (en) * | 2018-02-14 | 2018-07-20 | 常州协鑫光伏科技有限公司 | Silicon slice detergent and silicon wafer cleaning method |
| CN108531297A (en) * | 2018-06-14 | 2018-09-14 | 富地润滑科技股份有限公司 | A kind of environment friendly silicon chip detergent and preparation method |
| CN110616008A (en) * | 2019-10-22 | 2019-12-27 | 李珊 | Water-based stamp-pad ink self-mixing agent and preparation method thereof |
| CN110669594A (en) * | 2019-10-18 | 2020-01-10 | 广州亦盛环保科技有限公司 | Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof |
| CN112143590A (en) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning additive, silicon wafer cleaning liquid and application thereof |
| CN112795438A (en) * | 2020-12-31 | 2021-05-14 | 句容协鑫光伏科技有限公司 | Battery piece cleaning agent and cleaning method thereof |
| CN113981543A (en) * | 2021-11-02 | 2022-01-28 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
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| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
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| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105039006A (en) * | 2015-07-31 | 2015-11-11 | 陕西国防工业职业技术学院 | Cleaning agent used for solar grade silicon wafers and preparing method thereof |
| CN105039006B (en) * | 2015-07-31 | 2018-05-15 | 陕西国防工业职业技术学院 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
| CN106350262A (en) * | 2016-08-28 | 2017-01-25 | 广西小草信息产业有限责任公司 | Detergent for silicon wafer in solar cell system and preparation method of detergent |
| CN108300583A (en) * | 2018-02-14 | 2018-07-20 | 常州协鑫光伏科技有限公司 | Silicon slice detergent and silicon wafer cleaning method |
| CN108531297A (en) * | 2018-06-14 | 2018-09-14 | 富地润滑科技股份有限公司 | A kind of environment friendly silicon chip detergent and preparation method |
| CN110669594A (en) * | 2019-10-18 | 2020-01-10 | 广州亦盛环保科技有限公司 | Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof |
| CN110616008A (en) * | 2019-10-22 | 2019-12-27 | 李珊 | Water-based stamp-pad ink self-mixing agent and preparation method thereof |
| CN112143590A (en) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning additive, silicon wafer cleaning liquid and application thereof |
| CN112795438A (en) * | 2020-12-31 | 2021-05-14 | 句容协鑫光伏科技有限公司 | Battery piece cleaning agent and cleaning method thereof |
| CN113981543A (en) * | 2021-11-02 | 2022-01-28 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
| CN113981543B (en) * | 2021-11-02 | 2024-04-12 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
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