CN103710179B - A kind of solar monocrystalline silicon slice clean-out system - Google Patents
A kind of solar monocrystalline silicon slice clean-out system Download PDFInfo
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- CN103710179B CN103710179B CN201310663959.9A CN201310663959A CN103710179B CN 103710179 B CN103710179 B CN 103710179B CN 201310663959 A CN201310663959 A CN 201310663959A CN 103710179 B CN103710179 B CN 103710179B
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Abstract
The invention discloses a kind of solar monocrystalline silicon slice clean-out system, comprise following component: potassium hydroxide, tensio-active agent, permeate agent, sequestrant; This clean-out system is good to the cleaning performance of monocrystalline silicon piece, and use cost is low, and other silicon slice detergent can simplify cleaning relatively, and free from environmental pollution and be detrimental to health.
Description
Technical field
The present invention relates to a kind of solar monocrystalline silicon slice clean-out system, belong to Wafer Cleaning and protection field.
Background technology
Monocrystaline silicon solar cell is most widely used a kind of environment-friendly battery with fastest developing speed, and its complete processing has been shaped and has been widely used: by silicon single crystal rod dicing, then carries out just throwing, making herbs into wool.After silicon chip excision forming, the bits foam on its surface and greasy dirt need be cleaned, then carry out next process.As silicon chip was not cleaned before just throwing making herbs into wool, making herbs into wool rear surface will be caused to grow dim, so that product rejection.Therefore processing requirement silicon chip needs to clean to the consistent grey of color even before just throwing making herbs into wool, but current clean-out system many use HF acid or highly basic clean, and the serious and contaminate environment to silicon slice corrosion, endangers operator ' s health, affect next step technological operation.
Summary of the invention:
The present invention is directed to silicon slice detergent of the prior art existence cleaning not thorough, to silicon wafer seriously corroded, cost is high, the defects such as environmental pollution, object is to provide a kind of effective to cleaning monocrystalline silicon, use cost is low, can simplify cleaning, and free from environmental pollution and solar monocrystalline silicon slice clean-out system that is that be detrimental to health.
The invention provides a kind of solar monocrystalline silicon slice clean-out system, every 100g clean-out system comprises following component: potassium hydroxide 2 ~ 15g, tensio-active agent 1 ~ 5g, permeate agent 1 ~ 3g, sequestrant 1 ~ 5g.
Preferred solar monocrystalline silicon slice clean-out system, every 100g clean-out system comprises following component: potassium hydroxide 8 ~ 10g, tensio-active agent 1 ~ 3g, permeate agent 1g, sequestrant 1 ~ 3g.
Most preferred solar monocrystalline silicon slice clean-out system, every 100g clean-out system comprises following component: potassium hydroxide 9g, tensio-active agent 2g, permeate agent 1g, sequestrant 1g.
Described tensio-active agent is preferably alkyl-glucoside (APG) and/or isomeric alcohol polyethenoxy ether.
Described permeate agent is preferably isooctanol polyethoxylate.
Described sequestrant is preferably one or more in EDTA4Na, EDTA2Na, ammonium citrate.
Described clean-out system dilution 10 ~ 20 times of uses.
The method of clean-out system preparation of the present invention and cleaning silicon wafer:
1, the preparation of clean-out system: by 2 ~ 15 parts, mass parts potassium hydroxide, 1 ~ 5 part, tensio-active agent is water-soluble with permeate agent 1 ~ 3, be made into the component A that total mass part is 50 parts, by water-soluble for sequestrant 1 ~ 5 part, being made into total mass part is 50 parts of B component, by component A and B component mixing during use, after diluting 10 ~ 20 times, be mixed with working fluid;
2, the using method of clean-out system: the working fluid prepared by step 1 monocrystalline silicon piece being placed in 50 ~ 60 DEG C, first by ultrasonic prewashing, rinses out solid insoluble, then carries out ultrasonic cleaning, finally carries out repeatedly clear water rinsing.
Beneficial effect of the present invention: use HF acid or highly basic to clean for silicon wafer cleaning process of the prior art, there is cleaning not thorough, easily cause the defect that silicon chip surface grows dim, the two alkali two-component solar cleaning monocrystalline silicon agent of the one that the present invention researches and develops specially, the surface that this clean-out system thoroughly can remove monocrystalline silicon piece is dirty, and little to monocrystalline silicon sheet surface corrosion, effectively can prevent fine-hair maring using monocrystalline silicon slice rear surface from growing dim, substantially increase the qualification rate of product; This clean-out system acid consumpting alkali amount is few simultaneously, and can dilute use, greatly reduces the use cost of clean-out system; In addition, use this clean-out system use procedure simple, simplify cleaning step in the past, also effectively prevent the pollution to environment.
Embodiment
Following examples are intended to further illustrate the present invention, instead of limit the scope of the invention.
The test materials that embodiment 1 ~ 4 is selected: 125
#monocrystalline silicon piece, specimen size is: 125mm × 125mm × 2mm.
Embodiment 1
1, the preparation of clean-out system: by mass parts potassium hydroxide 8g, isomery alcohol polyoxy ether 1g and isooctanol polyethoxylate 1g is dissolved in 40g water, be made into the component A that total mass part is 50g, sequestrant EDTA4Na3g is dissolved in 47g water, be made into the B component that total mass is 50g, by component A and B component mixing during use, after diluting 15 times, be mixed with working fluid;
2, clean the method for silicon wafer: the working fluid that the 1kg step 1 monocrystalline silicon piece being placed in 50 DEG C is prepared, first by ultrasonic prewashing, rinses out solid insoluble, then carry out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in table 1.
Embodiment 2
1, the preparation of clean-out system: by mass parts potassium hydroxide 9g, isomery alcohol polyoxy ether 2g and isooctanol polyethoxylate 1g is dissolved in 38g water, be made into the component A that total mass part is 50g, sequestrant EDTA2Na1g is dissolved in 49g water, be made into the B component that total mass is 50g, by component A and B component mixing during use, after diluting 20 times, be mixed with working fluid;
2, clean the method for silicon wafer: the 1kg step 1 monocrystalline silicon piece being placed in 55 DEG C prepare working fluid, first by ultrasonic prewashing, solid insoluble is rinsed out, then carries out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in table 1.
Embodiment 3
1, the preparation of clean-out system: by mass parts potassium hydroxide 8g, APG2g and isooctanol polyethoxylate 1g is dissolved in 39g water, be made into the component A that total mass part is 50g, chelator acid citrate ammonium 2g is dissolved in 48g water, be made into the B component that total mass is 50g, by component A and B component mixing during use, after diluting 10 times, be mixed with working fluid;
2, clean the method for silicon wafer: the 1kg step 1 monocrystalline silicon piece being placed in 60 DEG C prepare working fluid, first by ultrasonic prewashing, solid insoluble is rinsed out, then carries out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in table 1.
Embodiment 4
1, the preparation of clean-out system: by mass parts potassium hydroxide 10g, APG3g and isooctanol polyethoxylate 1g is dissolved in 36g water, be made into the component A that total mass part is 50g, sequestrant EDTA4Na1g is dissolved in 49g water, be made into the B component that total mass is 50g, by component A and B component mixing during use, after diluting 15 times, be mixed with working fluid;
2, clean the method for silicon wafer: the working fluid that the 1kg step 1 monocrystalline silicon piece being placed in 60 DEG C is prepared, first by ultrasonic prewashing, rinses out solid insoluble, then carry out ultrasonic cleaning, finally carry out centrifugal drying after repeatedly clear water rinsing.Cleaning performance is in table 1.
The cleaning performance of the clean-out system cleaning silicon chip of table 1 embodiment 1 ~ 4
Experimental result shows: the cleaning carried out with the present invention, and the monocrystalline silicon sheet surface of more than 99.5% without vestige, without scratching, surface-brightening is seamless, enters after next step making herbs into wool operation that making herbs into wool is even under normal operation.
Claims (5)
1. a solar monocrystalline silicon slice clean-out system, is characterized in that, every 100g clean-out system comprises following component: potassium hydroxide 2 ~ 15g, tensio-active agent 1 ~ 5g, permeate agent 1 ~ 3g, sequestrant 1 ~ 5g; Described tensio-active agent is alkyl-glucoside and/or isomeric alcohol polyethenoxy ether; Described permeate agent is isooctanol polyethoxylate.
2. solar monocrystalline silicon slice clean-out system as claimed in claim 1, it is characterized in that, every 100g clean-out system comprises following component: potassium hydroxide 8 ~ 10g, tensio-active agent 1 ~ 3g, permeate agent 1g, sequestrant 1 ~ 3g.
3. solar monocrystalline silicon slice clean-out system as claimed in claim 2, it is characterized in that, every 100g clean-out system comprises following component: potassium hydroxide 9g, tensio-active agent 2g, permeate agent 1g, sequestrant 1g.
4. solar monocrystalline silicon slice clean-out system as claimed in claim 3, it is characterized in that, described sequestrant is one or more in EDTA4Na, EDTA2Na, ammonium citrate.
5. the solar monocrystalline silicon slice clean-out system as described in any one of Claims 1 to 4, is characterized in that, described clean-out system dilution 10 ~ 20 times of uses.
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| CN201310663959.9A CN103710179B (en) | 2013-12-09 | 2013-12-09 | A kind of solar monocrystalline silicon slice clean-out system |
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| CN201310663959.9A CN103710179B (en) | 2013-12-09 | 2013-12-09 | A kind of solar monocrystalline silicon slice clean-out system |
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| CN103710179B true CN103710179B (en) | 2015-08-05 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105039006B (en) * | 2015-07-31 | 2018-05-15 | 陕西国防工业职业技术学院 | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof |
| CN106350262A (en) * | 2016-08-28 | 2017-01-25 | 广西小草信息产业有限责任公司 | Detergent for silicon wafer in solar cell system and preparation method of detergent |
| CN108300583A (en) * | 2018-02-14 | 2018-07-20 | 常州协鑫光伏科技有限公司 | Silicon slice detergent and silicon wafer cleaning method |
| CN108531297A (en) * | 2018-06-14 | 2018-09-14 | 富地润滑科技股份有限公司 | A kind of environment friendly silicon chip detergent and preparation method |
| CN110669594B (en) * | 2019-10-18 | 2021-11-12 | 广州亦盛环保科技有限公司 | Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof |
| CN110616008A (en) * | 2019-10-22 | 2019-12-27 | 李珊 | Water-based stamp-pad ink self-mixing agent and preparation method thereof |
| CN112143590A (en) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning additive, silicon wafer cleaning liquid and application thereof |
| CN112795438A (en) * | 2020-12-31 | 2021-05-14 | 句容协鑫光伏科技有限公司 | Battery piece cleaning agent and cleaning method thereof |
| CN113981543B (en) * | 2021-11-02 | 2024-04-12 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
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| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
| CN102010797A (en) * | 2010-12-23 | 2011-04-13 | 西安隆基硅材料股份有限公司 | Cleaning agent for silicon materials and method for cleaning silicon materials |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
| CN102010797A (en) * | 2010-12-23 | 2011-04-13 | 西安隆基硅材料股份有限公司 | Cleaning agent for silicon materials and method for cleaning silicon materials |
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