CN110669594B - Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof - Google Patents

Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof Download PDF

Info

Publication number
CN110669594B
CN110669594B CN201910994588.XA CN201910994588A CN110669594B CN 110669594 B CN110669594 B CN 110669594B CN 201910994588 A CN201910994588 A CN 201910994588A CN 110669594 B CN110669594 B CN 110669594B
Authority
CN
China
Prior art keywords
silicon carbide
cleaning agent
carbide single
crystal wafer
polyoxyethylene ether
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910994588.XA
Other languages
Chinese (zh)
Other versions
CN110669594A (en
Inventor
包亚群
罗壮东
刘长海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangzhou 1s Environmental Protection Technology Co ltd
Original Assignee
Guangzhou 1s Environmental Protection Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangzhou 1s Environmental Protection Technology Co ltd filed Critical Guangzhou 1s Environmental Protection Technology Co ltd
Priority to CN201910994588.XA priority Critical patent/CN110669594B/en
Publication of CN110669594A publication Critical patent/CN110669594A/en
Application granted granted Critical
Publication of CN110669594B publication Critical patent/CN110669594B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/825—Mixtures of compounds all of which are non-ionic
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/825—Mixtures of compounds all of which are non-ionic
    • C11D1/8255—Mixtures of compounds all of which are non-ionic containing a combination of compounds differently alcoxylised or with differently alkylated chains
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2065—Polyhydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3707—Polyethers, e.g. polyalkyleneoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

The invention provides a silicon carbide single crystal wafer cleaning agent and a preparation method and application thereof, wherein the silicon carbide single crystal wafer cleaning agent comprises the following components in percentage by mass: 20-30% of chelating agent, 1-5% of polyethylene glycol, 1-5% of isooctanol polyoxyethylene ether, 1-5% of polyoxyethylene polyoxypropylene block polyether, 1-10% of solubilizer and the balance of water; the chelating agent is a mixture of potassium citrate and potassium gluconate. The silicon carbide single crystal wafer cleaning agent disclosed by the invention is weakly alkaline, has no corrosion phenomenon on wafers, is high in operation safety performance, and has a good cleaning effect on different stains at each processing section of the silicon carbide single crystal wafer.

Description

Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof
Technical Field
The invention belongs to the technical field of cleaning agents, particularly relates to a cleaning agent, and a preparation method and application thereof, and particularly relates to a silicon carbide single crystal wafer cleaning agent, and a preparation method and application thereof.
Background
In the application of semiconductor devices, along with the reduction of the production cost of silicon carbide, the silicon carbide can replace silicon as a chip due to the excellent performance of the silicon carbide, the bottleneck of the performance of the silicon chip due to the material is broken, and revolutionary revolution is brought to the electronic industry. In the production and processing processes of silicon carbide wafers, processes such as cutting, grinding, polishing and the like are required, and different dirt residues are generated in different processing processes, so that the invention of a cleaning agent for the silicon carbide wafers is necessary to solve the technical problems. As a cleaning agent for a polished silicon carbide single crystal substrate, a chemical solution having a high concentration of a strong acid (sulfuric acid, hydrochloric acid) or an alkali (ammonia water) and hydrofluoric acid added to hydrogen peroxide as a base is generally used. However, the use of highly concentrated hydrogen peroxide of strong acid or strong basicity or highly toxic hydrofluoric acid at high temperature has problems not only in workability but also in corrosion resistance around the cleaning apparatus and exhaust equipment.
CN102449745A discloses a method for cleaning a substrate for a silicon carbide semiconductor, comprising a first cleaning step of cleaning a substrate for a semiconductor using a cleaning agent composition, and a second cleaning step of cleaning the substrate for a semiconductor cleaned in the first cleaning step using an acidic solution containing a chelating agent, the cleaning agent composition containing: comprises a water-soluble salt of a transition metal, a polycarboxylic acid compound and a peroxide. Although the composition for the cleaning agent can clean different dirt residues generated in a processing process, the composition has strong acidity and low operation safety, and a large amount of pure water is required to be used for a washing process after cleaning treatment, so that the load of the treated wastewater on the environment is large.
CN104928060A discloses a silicon chip anticorrosion cleaning agent, which is composed of the following raw materials in percentage by weight: 0.5-2.5% of potassium hydroxide, 4-8% of fatty alcohol polyoxyethylene (7) ether, 0.4-0.8% of ethylene glycol butyl ether, 0.4-0.8% of perfluoroalkyl ethoxy ether alcohol, 0.2-1% of complex, 2-4% of tetramethyl ammonium hydroxide, 0.1-0.3% of sodium carboxymethyl cellulose and the balance of deionized water. Although the anticorrosive cleaning agent has strong decontamination capability, the anticorrosive cleaning agent contains potassium hydroxide and tetramethyl ammonium hydroxide, has strong alkalinity and strong corrosivity to silicon wafers, and is not suitable for cleaning photovoltaic and semiconductor silicon wafers.
Therefore, it is very necessary to develop a green and environment-friendly silicon carbide single crystal wafer cleaning agent with good cleaning effect and high safety performance.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a cleaning agent, a preparation method and application thereof, and particularly provides a cleaning agent for a silicon carbide single crystal wafer, a preparation method and application thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a silicon carbide single crystal wafer cleaning agent, which comprises the following components in percentage by mass: 20-30% of chelating agent, 1-5% of polyethylene glycol, 1-5% of isooctanol polyoxyethylene ether, 1-5% of polyoxyethylene polyoxypropylene block polyether, 1-10% of solubilizer and the balance of water;
the chelating agent is a mixture of potassium citrate and potassium gluconate.
In the present invention, the content of the chelating agent is 20 to 30%, and may be, for example, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%.
In the present invention, the content of the polyethylene glycol is 1 to 5%, and for example, may be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%.
In the present invention, the isooctanol polyoxyethylene ether content is 1 to 5%, and may be, for example, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%.
In the present invention, the polyoxyethylene polyoxypropylene block polyether content is 1-5%, and may be, for example, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%.
In the present invention, the content of the solubilizer is 1 to 10%, and may be, for example, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%.
In the invention, the mixture of potassium citrate and potassium gluconate is used as a chelating agent, the solubility is good, the potassium citrate and potassium gluconate are matched with each other, the synergistic effect is realized, the potassium citrate and potassium gluconate can be quickly complexed with metal ions such as calcium ions, magnesium ions and the like in water at a lower temperature to generate good flocculation and quick sedimentation, the difficulty of the metal ions in the water on cleaning is eliminated, and the potassium citrate and the potassium gluconate are both alkalescent, have high safety and do not corrode a wafer.
In the invention, the polyethylene glycol has good compatibility, and can reduce the freezing point of an aqueous solution, so that the cleaning agent still has no icing phenomenon at a lower temperature.
In the invention, the isooctanol polyoxyethylene ether is used as a nonionic surfactant, has no toxicity and small irritation, has good wetting, emulsifying, decontaminating, descaling, solubilizing, foaming, dispersing and lubricating performances, and is easy to be compatible with various active ingredients for use so as to improve the dynamic surface tension. The polyoxyethylene polyoxypropylene block polyether is specifically a Polyoxyethylene (PEO) -polyoxypropylene (PPO) block copolymer, and a high-molecular polyether type nonionic surfactant which takes polyoxypropylene as a hydrophobic group and polyoxyethylene as a hydrophilic group has the characteristics of no toxicity, no irritation and good stability, is matched with isooctanol polyoxyethylene ether, has the function of coordination and synergism, greatly improves the water solubility (cloud point rise) of the cleaning agent, maintains the permeability, and greatly improves the emulsification rate, thereby improving the washing performance.
In the invention, the solubilizer can increase the solubility of the cleaning agent, improve the contents of isooctanol polyoxyethylene ether and oxyethylene polyoxypropylene block polyether in the cleaning agent and improve the cleaning capability.
Preferably, the cleaning agent comprises the following components in percentage by mass: 20-24% of chelating agent, 2-3% of polyethylene glycol, 3-5% of isooctanol polyoxyethylene ether, 1-2% of polyoxyethylene polyoxypropylene block polyether, 5-8% of solubilizer and the balance of water;
the chelating agent is a mixture of potassium citrate and potassium gluconate.
Preferably, the mass ratio of potassium citrate to potassium gluconate in the chelating agent is (1.2-2):1, and may be, for example, 1.2:1, 1.3:1, 1.4:1, 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2: 1.
Preferably, the number average molecular weight of the polyethylene glycol is 400-.
Preferably, the isooctanol polyoxyethylene ether has an EO number of 7 to 10, and may be, for example, 7, 8, 9, 10, preferably 7.
Preferably, the polyoxyethylene polyoxypropylene block polyether has a number average molecular weight of 2000-.
Preferably, the polyoxyethylene polyoxypropylene block polyether has a relative HBL value of 3-13, which may be, for example, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13.
Preferably, the polyoxyethylene polyoxypropylene block polyether is selected from any one of polyether L61, polyether L62, polyether L63 or polyether L64 or a combination of at least two of the polyether L62 and/or polyether L64.
Preferably, the solubilizer is selected from any one or a combination of at least two of ethylene glycol, propylene glycol, glycerol, isopropanol or diethylene glycol monobutyl ether, preferably glycerol.
Preferably, the cleaning agent further comprises coconut oil alcohol polyoxyethylene ether.
Preferably, the coconut oil alcohol polyoxyethylene ether has an EO number of 8 to 12, which may be, for example, 8, 9, 10, 11, 12, preferably 10.
Preferably, the content of the coconut oil alcohol polyoxyethylene ether in the cleaning agent is 0.05-1.0% by mass, and may be, for example, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%.
In a second aspect, the invention provides a preparation method of the silicon carbide single-crystal wafer cleaning agent, which comprises the following steps: adding chelating agent, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether and solubilizer into water according to the formula ratio, and stirring and mixing to obtain the silicon carbide single crystal wafer cleaning agent.
Preferably, the stirring temperature is 40-60 ℃, for example, 40 ℃, 42 ℃, 44 ℃, 46 ℃, 48 ℃, 50 ℃, 52 ℃, 54 ℃, 56 ℃, 58 ℃, 60 ℃.
In a third aspect, the invention provides the use of the silicon carbide single crystal wafer cleaning agent as described in the first aspect for cleaning semiconductor chips.
Compared with the prior art, the invention has the following beneficial effects:
(1) the silicon carbide single crystal wafer cleaning agent disclosed by the invention is mild in components, free of stimulation, alkalescent after compatibility, free of corrosion phenomenon on a silicon carbide single crystal wafer and high in operation safety.
(2) The silicon carbide single crystal wafer cleaning agent is suitable for cleaning silicon carbide single crystal wafers after cutting, grinding and polishing processes, has a good cleaning effect on cleaning different stains of each processing section, and can effectively improve the yield of the silicon carbide single crystal wafers. The yield of the cleaned and cut silicon carbide single crystal wafer reaches more than 98%, the yield of the cleaned and ground silicon carbide single crystal wafer reaches more than 97%, and the yield of the cleaned and polished silicon carbide single crystal wafer reaches more than 95%.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 14% of potassium citrate, 8% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 400), 5% of isooctanol polyoxyethylene ether (+7EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62), 5% of glycerol, 0.8% of coconut oil alcohol polyoxyethylene ether (+10EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 40 ℃ to obtain the silicon carbide single-chip cleaning agent.
Example 2
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 12% of potassium citrate, 10% of potassium gluconate, 2% of polyethylene glycol (the number average molecular weight is 600), 4% of isooctanol polyoxyethylene ether (+7EO), 1% of polyoxyethylene polyoxypropylene block polyether (polyether L64), 6% of glycerol, 0.5% of coconut oil alcohol polyoxyethylene ether (+10EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 50 ℃ to obtain the silicon carbide single-chip cleaning agent.
Example 3
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 13% of potassium citrate, 10% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 1000), 3% of isooctanol polyoxyethylene ether (+7EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62), 8% of glycerol, 0.8% of coconut oil alcohol polyoxyethylene ether (+10EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 60 ℃ to obtain the silicon carbide single-chip cleaning agent.
Example 4
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 14% of potassium citrate, 8% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 400), 5% of isooctanol polyoxyethylene ether (+7EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62) and 5% of glycerol, and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether and glycerol into water according to the formula ratio, and stirring and mixing at 60 ℃ to obtain the silicon carbide single crystal wafer cleaning agent.
Example 5
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 8% of potassium citrate, 14% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 400), 5% of isooctanol polyoxyethylene ether (+7EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62), 5% of glycerol, 0.8% of coconut oil alcohol polyoxyethylene ether (+10EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 40 ℃ to obtain the silicon carbide single-chip cleaning agent.
Example 6
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 16% of potassium citrate, 6% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 400), 5% of isooctanol polyoxyethylene ether (+7EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62), 5% of glycerol, 0.8% of coconut oil alcohol polyoxyethylene ether (+10EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 40 ℃ to obtain the silicon carbide single-chip cleaning agent.
Example 7
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 14% of potassium citrate, 8% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 400), 5% of isooctanol polyoxyethylene ether (+8EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62), 5% of glycerol, 0.8% of coconut oil alcohol polyoxyethylene ether (+10EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 40 ℃ to obtain the silicon carbide single-chip cleaning agent.
Example 8
The embodiment provides a silicon carbide single-crystal wafer cleaning agent, which comprises the following components in percentage by mass: 14% of potassium citrate, 8% of potassium gluconate, 3% of polyethylene glycol (the number average molecular weight is 400), 5% of isooctanol polyoxyethylene ether (+7EO), 2% of polyoxyethylene polyoxypropylene block polyether (polyether L62), 5% of glycerol, 0.8% of coconut oil alcohol polyoxyethylene ether (+9EO), and the balance of water.
The preparation method of the embodiment comprises the following steps: adding potassium citrate, potassium gluconate, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, glycerol and coconut oil alcohol polyoxyethylene ether into water according to the formula ratio, and stirring and mixing at 40 ℃ to obtain the silicon carbide single-chip cleaning agent.
Comparative example 1
The cleaning agent is the same as the example 1, only the difference is that the cleaning agent does not contain a chelating agent, and the content of other components and the preparation method are not changed.
Comparative example 2
The cleaning agent is the same as the example 1, only the difference is that the cleaning agent does not contain potassium gluconate, the content of potassium citrate is 22 percent, and the content of other components and the preparation method are not changed.
Comparative example 3
The cleaning agent is the same as the example 1, only the difference is that the cleaning agent does not contain potassium citrate, the content of potassium gluconate is 22%, and the content of other components and the preparation method are not changed.
Comparative example 4
The cleaning agent is the same as the example 1, only the difference is that the cleaning agent does not contain polyethylene glycol, and the content of other components and the preparation method are not changed.
Comparative example 5
The cleaning agent is the same as the example 1 except that the cleaning agent does not contain isooctanol polyoxyethylene ether, the content of polyoxyethylene polyoxypropylene block polyether (polyether L62) is 7%, and the content of other components and the preparation method are unchanged.
Comparative example 6
The cleaning agent is the same as example 1 except that the cleaning agent does not contain polyoxyethylene polyoxypropylene block polyether (polyether L62), the content of isooctanol polyoxyethylene ether is 7%, and the content of other components and the preparation method are unchanged.
Comparative example 7
The cleaning agent is the same as the example 1, only in that the cleaning agent does not contain glycerol, and the content of other components and the preparation method are unchanged.
The silicon carbide single crystal wafer cleaning agents prepared in examples 1 to 8 and the cleaning agents prepared in examples 1 to 7 were added to water to prepare cleaning solutions having a concentration of 3 to 5 wt% respectively, which were used as test samples. And respectively heating the cleaning solution to 50 +/-5 ℃, and respectively soaking the cut silicon carbide single crystal wafer, the ground silicon carbide single crystal wafer and the polished silicon carbide single crystal wafer into the cleaning solution for cleaning. The yields of the silicon carbide single crystal wafer after cleaning and cutting, the silicon carbide single crystal wafer after grinding and the silicon carbide single crystal wafer after polishing are detected, and specific test results are shown in table 1.
TABLE 1
Figure BDA0002239347220000101
Figure BDA0002239347220000111
As is clear from the test data in Table 1, the silicon carbide single-crystal wafer cleaning agents prepared in examples 1 to 8 were suitable for cleaning the silicon carbide single-crystal wafer after the cutting, grinding and polishing processes, and the yield of the cleaned silicon carbide single-crystal wafer was improved. The yield of the cleaned and cut silicon carbide single crystal wafer reaches more than 98%, the yield of the cleaned and ground silicon carbide single crystal wafer reaches more than 97%, and the yield of the cleaned and polished silicon carbide single crystal wafer reaches more than 95%, and the cleaning effect of the cleaning agent on the silicon carbide single crystal wafer is better than that of the cleaning agent prepared in the comparison proportion of 1-7. The potassium citrate and the potassium gluconate in the chelating agent are matched with each other, so that the chelating agent has a synergistic effect, the chelating effect of the chelating agent and metal ions in water can be improved, the influence of the metal ions in the water on the cleaning effect can be eliminated, and the cleaning effect can be further improved; meanwhile, isooctanol polyoxyethylene ether and polyoxyethylene polyoxypropylene block polyether have a synergistic effect, are beneficial to improving the cloud point and water solubility of the cleaning agent, keep the permeability and stability of the cleaning agent and improve the cleaning effect of the cleaning agent on the silicon carbide single crystal wafer.
The applicant states that the invention is illustrated by the above embodiments, but the invention is not limited to the above embodiments, i.e. the invention is not limited to the above embodiments. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

Claims (7)

1. The silicon carbide single crystal wafer cleaning agent is characterized by comprising the following components in percentage by mass: 20-24% of chelating agent, 2-3% of polyethylene glycol, 3-5% of isooctanol polyoxyethylene ether, 1-2% of polyoxyethylene polyoxypropylene block polyether, 0.05-1.0% of coconut oil alcohol polyoxyethylene ether, 5-8% of solubilizer and the balance of water;
the chelating agent is a mixture of potassium citrate and potassium gluconate with the mass ratio of (1.2-2) to 1;
the number average molecular weight of the polyethylene glycol is 400-2000;
the EO number of the isooctyl alcohol polyoxyethylene ether is 7-10;
the polyoxyethylene polyoxypropylene block polyether is polyether L62 and/or polyether L64;
the EO number of the coconut oil alcohol polyoxyethylene ether is 8-12;
the solubilizer is glycerol.
2. The silicon carbide single-crystal wafer cleaning agent as set forth in claim 1, wherein the polyethylene glycol has a number average molecular weight of 400-1000.
3. The silicon carbide single-wafer cleaning agent according to claim 1, wherein the isooctanol polyoxyethylene ether has an EO number of 7.
4. The silicon carbide single-wafer cleaning agent according to claim 1, wherein the coconut alcohol polyoxyethylene ether has an EO number of 10.
5. The preparation method of the silicon carbide single-crystal wafer cleaning agent according to any one of claims 1 to 4, characterized in that the preparation method comprises: adding chelating agent, polyethylene glycol, isooctanol polyoxyethylene ether, polyoxyethylene polyoxypropylene block polyether, coconut oil alcohol polyoxyethylene ether and solubilizer into water according to the formula ratio, and stirring and mixing to obtain the silicon carbide single crystal wafer cleaning agent.
6. The method for preparing the silicon carbide single-crystal wafer cleaning agent as claimed in claim 5, wherein the stirring temperature is 40 to 60 ℃.
7. Use of the silicon carbide single-crystal wafer cleaning agent according to any one of claims 1 to 4 for cleaning semiconductor chips.
CN201910994588.XA 2019-10-18 2019-10-18 Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof Active CN110669594B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910994588.XA CN110669594B (en) 2019-10-18 2019-10-18 Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910994588.XA CN110669594B (en) 2019-10-18 2019-10-18 Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN110669594A CN110669594A (en) 2020-01-10
CN110669594B true CN110669594B (en) 2021-11-12

Family

ID=69083078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910994588.XA Active CN110669594B (en) 2019-10-18 2019-10-18 Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN110669594B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103710179B (en) * 2013-12-09 2015-08-05 长沙艾森设备维护技术有限公司 A kind of solar monocrystalline silicon slice clean-out system
CN107760459B (en) * 2016-08-16 2020-08-04 蓝思科技股份有限公司 Cleaning agent for cleaning glass after UV (ultraviolet) wire drawing
CN106675811A (en) * 2016-12-30 2017-05-17 德清丽晶能源科技有限公司 Silicon wafer cleaning agent

Also Published As

Publication number Publication date
CN110669594A (en) 2020-01-10

Similar Documents

Publication Publication Date Title
CN109576077B (en) Optical glass cleaning agent
CN100497571C (en) Solar energy silicon crystal chip cleaning agent
EP2209134B1 (en) Method of cleaning semiconductor wafers
EP0804635B1 (en) Non-silicated soft metal safe product
CN104245912B (en) The manufacture method of steel plate alkalis composition
JP2009040828A (en) Detergent composition for wafer or plate-like material
KR101071170B1 (en) Wetting composition and its use
CN110669594B (en) Silicon carbide single crystal wafer cleaning agent and preparation method and application thereof
CN112745990B (en) Non-phosphorus two-component cleaning agent and preparation method and application thereof
CA1327932C (en) Polyethylene glycol ether low temperature foam suppressing agents in low-foam cleaning agents
CN112745994A (en) Double-component cleaning agent and preparation method and application thereof
CN113544248B (en) Semiconductor wafer cleaning liquid composition and cleaning method using the same
CN114806752A (en) High-free-alkalinity single-component cleaning agent for monocrystalline large-size silicon wafer
KR101008403B1 (en) Degreasing Agent for Rolling Fluid Having LowSaponification Value
EP3719104B1 (en) Surfactant and detergent containing surfactant
CN113174296A (en) Low-temperature foam cleaning agent for meat processing place and preparation method thereof
CN112458468A (en) Spray cleaning agent and preparation method thereof
JP4850455B2 (en) Detergent composition for metal
CN114106934B (en) Sapphire wafer cleaning agent and preparation method thereof
JP2559500B2 (en) Detergent composition
WO2013118042A1 (en) A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and comprising no significant amounts of specific nitrogen-containing compounds
JP4818539B2 (en) Aqueous cleaning agent for silverware
CN112126935B (en) Low-temperature adaptive degreasing agent
KR100366281B1 (en) A Silicade And Pipe Cleaner Manufacturing Method Thereof
CN111647895A (en) non-VOC water-based soft metal cleaning agent

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant