CN105344641A - Cleaning method of silicon raw material - Google Patents
Cleaning method of silicon raw material Download PDFInfo
- Publication number
- CN105344641A CN105344641A CN201510822086.0A CN201510822086A CN105344641A CN 105344641 A CN105344641 A CN 105344641A CN 201510822086 A CN201510822086 A CN 201510822086A CN 105344641 A CN105344641 A CN 105344641A
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- CN
- China
- Prior art keywords
- cleaning
- silicon
- silicon material
- raw material
- silicon raw
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to the technical field of solar cells, and specifically relates to a cleaning method of a silicon raw material. The method comprises the following steps: (1) wiping the surface of the silicon raw material with a cleaning solution, wherein the cleaning solution comprises the following components in percentage by weight: 38 to 40% of silicon slice detergent, and the balance pure water; (2) flushing for 9 to 15 minutes through a high-pressure water gun; (3) ultrasonically cleaning for 25 to 30 minutes at the temperature of 31 to 33 DEG C. According to the method, the silicon raw material can be completely cleaned by wiping with the low-alkaline cleaning solution, flushing through the high-pressure water gun and ultrasonically cleaning; the equipment damage and environmental pollution caused by a strong alkali and strong acid chemical corrosion process can be avoided; in addition, the method is simple, easy to operate and good in cleaning effect; the cleaning acceptability is more than 99%.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to a kind of cleaning method of silicon material.
Background technology
Monocrystalline silicon piece is a kind of basic material preparing solar cell.The monocrystalline silicon piece of solar energy industry, usually adopts drawing to produce, the silicon single crystal rod prepared, then through blocking, edging, slice processing form.
In order to pulling monocrystal silicon rod, need to carry out decontamination impurity elimination process cleaning to polysilicon raw materials (abbreviation silicon material).Its cleaning quality is good and bad relevant to the quality of silicon single crystal rod, if produce the appearance of the problems such as disconnected rib when residual impurity too much can cause silicon single crystal rod to draw in crystal raw material.Cleaning polycrystalline silicon material, selects strong acid or highly basic to remove silicon material surface impurity as cleaning agent usually.Although cleaning performance is relatively good; but strong acid and strong base can cause damage to equipment, form corrosion to silicon chip surface, cleaning qualification rate is low; and the discharge of wastewater of highly basic strong acid chemical etching process causes very large burden to environment, does not meet the policy of environmental protection and energy-saving and emission-reduction.
Summary of the invention
The invention provides a kind of cleaning method of silicon material, adopt low alkali wash water wiping, giant flushing, ultrasonic cleaning to realize comprehensive cleaning of silicon material, the equipment using highly basic strong acid chemical etching process to bring is avoided to endanger and environmental pollution, and method is simple, easy to operate, cleaning performance is good.
Technical scheme of the present invention is: a kind of cleaning method of silicon material, comprises the steps:
(1) washing lotion is adopted to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 38-40%, surplus are pure water;
(2) giant rinses 9-15 minute;
(3) ultrasonic cleaning; Cleaning temperature is 31-33 DEG C, and the time is 25-30 minute.
Preferred version is as follows:
The pressure of giant is 8-12Kg.
In step (3), ultrasonic cleaning adopts end shake, foreshock and after shock formula three supersonic cleaning machines.
Silicon slice detergent model is MT-480.
Silicon slice detergent is generally made up of alkali, chelate and surfactant etc., and use after silicon chip cleaning liquid dilution, washing lotion belongs to low alkalinity, can not cause damage to silicon chip surface.Adopt washing lotion to the method for silicon material surface wipes can remove remained on surface as the cutting fluid in cutting process, silicon liquid etc., utilize giant to rinse the impurity of remained on surface, utilize ultrasonic cleaning to remove to remain in the impurity in silicon material gap.
The beneficial effect adopting technique scheme to produce is:
The present invention adopts low alkali wash water wiping, giant flushing, ultrasonic cleaning to realize comprehensive cleaning of silicon material, avoid the equipment using highly basic strong acid chemical etching process to bring to endanger and environmental pollution, and method is simple, easy to operate, cleaning performance is good, and cleaning qualification rate is more than 99%.
Detailed description of the invention
Below the present embodiment is described in further detail, but the present invention is not limited to specific embodiment.
Embodiment 1:
A cleaning method for silicon material, comprises the steps:
(1) washing lotion is adopted to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 38%, surplus are pure water;
(2) giant rinses 15 minutes;
(3) ultrasonic cleaning; Cleaning temperature is 31 DEG C, and the time is 30 minutes.
The pressure of giant is 8Kg.
In step (3), ultrasonic cleaning adopts end shake, foreshock and after shock formula three supersonic cleaning machines.
Silicon slice detergent model is MT-480.
Embodiment 2:
A cleaning method for silicon material, comprises the steps:
(1) washing lotion is adopted to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 40%, surplus are pure water;
(2) giant rinses 9 minutes;
(3) ultrasonic cleaning; Cleaning temperature is 33 DEG C, and the time is 25 minutes.
The pressure of giant is 12Kg.
In step (3), ultrasonic cleaning adopts end shake, foreshock and after shock formula three supersonic cleaning machines.
Silicon slice detergent model is MT-480.
Silicon slice detergent is generally made up of alkali, chelate and surfactant etc., and use after silicon chip cleaning liquid dilution, washing lotion belongs to low alkalinity, can not cause damage to silicon chip surface.Adopt washing lotion to the method for silicon material surface wipes can remove remained on surface as the cutting fluid in cutting process, silicon liquid etc., utilize giant to rinse the impurity of remained on surface, utilize ultrasonic cleaning to remove to remain in the impurity in silicon material gap.
The beneficial effect adopting technique scheme to produce is:
The present invention adopts low alkali wash water wiping, giant flushing, ultrasonic cleaning to realize comprehensive cleaning of silicon material, avoid the equipment using highly basic strong acid chemical etching process to bring to endanger and environmental pollution, and method is simple, easy to operate, cleaning performance is good, and cleaning qualification rate is more than 99%.
Claims (4)
1. a cleaning method for silicon material, is characterized in that comprising the steps:
(1) washing lotion is adopted to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 38-40%, surplus are pure water;
(2) giant rinses 9-15 minute;
(3) ultrasonic cleaning; Cleaning temperature is 31-33 DEG C, and the time is 25-30 minute.
2. the cleaning method of a kind of silicon material according to claim 1, is characterized in that the pressure of described giant is 8-12Kg.
3. the cleaning method of a kind of silicon material according to claim 1, is characterized in that in described step (3), ultrasonic cleaning adopts end shake, foreshock and after shock formula three supersonic cleaning machines.
4. the cleaning method of a kind of silicon material according to claim 1, is characterized in that described silicon slice detergent model is MT-480.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510822086.0A CN105344641A (en) | 2015-11-24 | 2015-11-24 | Cleaning method of silicon raw material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510822086.0A CN105344641A (en) | 2015-11-24 | 2015-11-24 | Cleaning method of silicon raw material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105344641A true CN105344641A (en) | 2016-02-24 |
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ID=55320782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510822086.0A Pending CN105344641A (en) | 2015-11-24 | 2015-11-24 | Cleaning method of silicon raw material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105344641A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106345739A (en) * | 2016-11-29 | 2017-01-25 | 晶科能源有限公司 | Method and device for cleaning silicon materials |
| CN106623218A (en) * | 2016-12-23 | 2017-05-10 | 江苏迩高新能源科技有限公司 | Alkaline type washing method for block-shaped silicon raw materials |
| CN115957992A (en) * | 2022-12-26 | 2023-04-14 | 苏州协鑫光伏科技有限公司 | Degumming operation method for improving single machine efficiency by matching with automatic import |
-
2015
- 2015-11-24 CN CN201510822086.0A patent/CN105344641A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106345739A (en) * | 2016-11-29 | 2017-01-25 | 晶科能源有限公司 | Method and device for cleaning silicon materials |
| CN106623218A (en) * | 2016-12-23 | 2017-05-10 | 江苏迩高新能源科技有限公司 | Alkaline type washing method for block-shaped silicon raw materials |
| CN115957992A (en) * | 2022-12-26 | 2023-04-14 | 苏州协鑫光伏科技有限公司 | Degumming operation method for improving single machine efficiency by matching with automatic import |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160224 |
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| WD01 | Invention patent application deemed withdrawn after publication |