CN105238574A - Solar monocrystalline silicon wafer cleaning agent and preparation method thereof - Google Patents
Solar monocrystalline silicon wafer cleaning agent and preparation method thereof Download PDFInfo
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- CN105238574A CN105238574A CN201510677357.8A CN201510677357A CN105238574A CN 105238574 A CN105238574 A CN 105238574A CN 201510677357 A CN201510677357 A CN 201510677357A CN 105238574 A CN105238574 A CN 105238574A
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- monocrystalline silicon
- solar monocrystalline
- out system
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Abstract
The invention discloses a solar monocrystalline silicon wafer cleaning agent. The solar monocrystalline silicon wafer cleaning agent is prepared from, by weight, 2-4% of secondary alkane sulphonate sodium, 0.8-1.2% of hydroxylamine hydrochloride, 1-3% of ketone, 1-2% of alcohol alkoxylate, 0.3-0.5% of epoxy silane coupling, 0.2-0.5% of 2-ethyl-4-methylimidazole, 0.3-1.2% of acid proteinase, 2-4% of menthol, 2.2-3% of laurinol polyoxyethylene ether sodium sulfate, 2-5% of water soluble ionic liquid and the balance water. Compared with the prior art, the cleaning agent has the advantages that under the environment without strong acid or strong base and the conservation of the mutual effect of other components, the cleaning effect is good, corrosion to metal is not caused, cleaning agent residues will not form particles to be attached to an object to be cleaned, and further chronic corrosion is avoided.
Description
Technical field
The present invention relates to a kind of clean-out system, be specifically related to solar monocrystalline silicon slice clean-out system and preparation method thereof.
Background technology
Monocrystaline silicon solar cell efficiency of conversion is the highest, and technology is also ripe.Under lab the highest efficiency of conversion is 23%, and efficiency during scale production is 15%.Still dominate in large-scale application and industrial production.Need silicon single crystal rod dicing in its preparation process, then carry out just throwing, making herbs into wool, bits foam and greasy dirt can be produced in the process, if do not clean up, its surface can be caused to grow dim, so that product rejection.Current clean-out system many uses HF acid or highly basic clean; serious and the contaminate environment to silicon slice corrosion; harm operator ' s health; and the micronized particle in clean-out system can be attached to cleaning object can cause long-term chronic corrosion phenomenon; and corrosion to a certain degree can be caused to cleaning object, also improve production cost.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of solar monocrystalline silicon slice clean-out system and preparation method thereof.
Technical scheme: for achieving the above object, a kind of solar monocrystalline silicon slice clean-out system provided by the invention, be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 2 ~ 4%, oxammonium hydrochloride 0.8 ~ 1.2%, ketone 1 ~ 3%, isomeric alcohol polyethenoxy ether 1 ~ 2%, epoxy radicals silicone hydride coupler 0.3 ~ 0.5%, 2-ethyl 4-methylimidazole 0.2 ~ 0.5%, aspartic protease 0.3 ~ 1.2%, menthol 2 ~ 4%, ethoxylated dodecyl alcohol sodium sulfate 2.2 ~ 3%, water soluble ion liquid 2 ~ 5%, surplus is water.
Preferably, weight percent meter is made up of following raw material: Seconary Alkane Sulphonate Sodium 3 ~ 4%, oxammonium hydrochloride 0.8 ~ 1.2%, ketone 2 ~ 3%, isomeric alcohol polyethenoxy ether 1 ~ 2%, epoxy radicals silicone hydride coupler 0.4 ~ 0.5%, 2-ethyl 4-methylimidazole 0.3 ~ 0.5%, aspartic protease 0.8 ~ 1.2%, menthol 3 ~ 4%, ethoxylated dodecyl alcohol sodium sulfate 2.5 ~ 3%, water soluble ion liquid 3 ~ 5%, surplus is water.
Preferably, weight percent meter is made up of following raw material: Seconary Alkane Sulphonate Sodium 3%, oxammonium hydrochloride 1%, ketone 2.5%, isomeric alcohol polyethenoxy ether 1.5%, epoxy radicals silicone hydride coupler 0.45%, 2-ethyl 4-methylimidazole 0.4%, aspartic protease 1%, menthol 3%, ethoxylated dodecyl alcohol sodium sulfate 2.5%, water soluble ion liquid 3%, surplus is water.
Further, described ketone is one or more in acetone, methylethylketone, pimelinketone or mibk.
Further, the chemical formula of water soluble ion liquid is [HBIm] [BF4].
The preparation method of above-mentioned solar monocrystalline silicon slice clean-out system, after taking the mixing of corresponding feed composition, ultrasonic 10 ~ 20min under hyperacoustic effect.
Beneficial effect: clean-out system prepared by the present invention in terms of existing technologies; have the following advantages: peculiar under the environment of strong acid and strong base and under the maintenance of other component interactions by the present invention; not only cleaning performance is good; and can not cause corrosion of metal; clean-out system residue there will not be micronised particles to be attached on cleaning object, avoids further chronic corrosion.
Embodiment
Below in conjunction with embodiment, the present invention is further described.
Embodiment 1:
A kind of solar monocrystalline silicon slice clean-out system, be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 2 ~ 4%, oxammonium hydrochloride 1.2%, ketone 1%, isomeric alcohol polyethenoxy ether 1%, epoxy radicals silicone hydride coupler 0.3%, 2-ethyl 4-methylimidazole 0.2%, aspartic protease 0.3%, menthol 2%, ethoxylated dodecyl alcohol sodium sulfate 2.2%, water soluble ion liquid 2%, surplus is water.
Embodiment 2:
A kind of solar monocrystalline silicon slice clean-out system, be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 2 ~ 4%, oxammonium hydrochloride 0.8%, ketone 3%, isomeric alcohol polyethenoxy ether 2%, epoxy radicals silicone hydride coupler 0.5%, 2-ethyl 4-methylimidazole 0.5%, aspartic protease 1.2%, menthol 4%, ethoxylated dodecyl alcohol sodium sulfate 3%, water soluble ion liquid 5%, surplus is water.
Embodiment 3:
A kind of solar monocrystalline silicon slice clean-out system, be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 3 ~ 4%, oxammonium hydrochloride 1%, ketone 2.5%, isomeric alcohol polyethenoxy ether 1.5%, epoxy radicals silicone hydride coupler 0.45%, 2-ethyl 4-methylimidazole 0.35%, aspartic protease 1%, menthol 3.5%, ethoxylated dodecyl alcohol sodium sulfate 2.5%, water soluble ion liquid 3.5%, surplus is water.
Embodiment 4:
A kind of solar monocrystalline silicon slice clean-out system, be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 3%, oxammonium hydrochloride 1%, ketone 2.5%, isomeric alcohol polyethenoxy ether 1.5%, epoxy radicals silicone hydride coupler 0.45%, 2-ethyl 4-methylimidazole 0.4%, aspartic protease 1%, menthol 3%, ethoxylated dodecyl alcohol sodium sulfate 2.5%, water soluble ion liquid 3%, surplus is water.
Embodiment 5:
A kind of solar monocrystalline silicon slice clean-out system, be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 3%, oxammonium hydrochloride 0.8%, ketone 2%, isomeric alcohol polyethenoxy ether 1%, epoxy radicals silicone hydride coupler 0.4%, 2-ethyl 4-methylimidazole 0.3%, aspartic protease 0.8%, menthol 3%, ethoxylated dodecyl alcohol sodium sulfate 2.5%, water soluble ion liquid 3%, surplus is water.
The performance test of embodiment 1 ~ 5 is as following table:
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. a solar monocrystalline silicon slice clean-out system, it is characterized in that: be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 2 ~ 4%, oxammonium hydrochloride 0.8 ~ 1.2%, ketone 1 ~ 3%, isomeric alcohol polyethenoxy ether 1 ~ 2%, epoxy radicals silicone hydride coupler 0.3 ~ 0.5%, 2-ethyl 4-methylimidazole 0.2 ~ 0.5%, aspartic protease 0.3 ~ 1.2%, menthol 2 ~ 4%, ethoxylated dodecyl alcohol sodium sulfate 2.2 ~ 3%, water soluble ion liquid 2 ~ 5%, surplus is water.
2. a kind of solar monocrystalline silicon slice clean-out system according to claim 1, it is characterized in that: be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 3 ~ 4%, oxammonium hydrochloride 0.8 ~ 1.2%, ketone 2 ~ 3%, isomeric alcohol polyethenoxy ether 1 ~ 2%, epoxy radicals silicone hydride coupler 0.4 ~ 0.5%, 2-ethyl 4-methylimidazole 0.3 ~ 0.5%, aspartic protease 0.8 ~ 1.2%, menthol 3 ~ 4%, ethoxylated dodecyl alcohol sodium sulfate 2.5 ~ 3%, water soluble ion liquid 3 ~ 5%, surplus is water.
3. a kind of solar monocrystalline silicon slice clean-out system according to claim 1, it is characterized in that: be made up of following raw material by weight percentage: Seconary Alkane Sulphonate Sodium 3%, oxammonium hydrochloride 1%, ketone 2.5%, isomeric alcohol polyethenoxy ether 1.5% epoxy radicals silicone hydride coupler 0.45%, 2-ethyl 4-methylimidazole 0.4%, aspartic protease 1%, menthol 3%, ethoxylated dodecyl alcohol sodium sulfate 2.5%, water soluble ion liquid 3%, surplus is water.
4. a kind of solar monocrystalline silicon slice clean-out system according to claim 1, is characterized in that: described ketone is one or more in acetone, methylethylketone, pimelinketone or mibk.
5. a kind of solar monocrystalline silicon slice clean-out system according to claim 1, is characterized in that: the chemical formula of water soluble ion liquid is [HBIm] [BF4].
6. a preparation method for solar monocrystalline silicon slice clean-out system according to claim 1, is characterized in that:
After taking the mixing of corresponding feed composition, ultrasonic 10 ~ 20min under hyperacoustic effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510677357.8A CN105238574A (en) | 2015-10-19 | 2015-10-19 | Solar monocrystalline silicon wafer cleaning agent and preparation method thereof |
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| CN201510677357.8A CN105238574A (en) | 2015-10-19 | 2015-10-19 | Solar monocrystalline silicon wafer cleaning agent and preparation method thereof |
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| CN105238574A true CN105238574A (en) | 2016-01-13 |
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| CN201510677357.8A Pending CN105238574A (en) | 2015-10-19 | 2015-10-19 | Solar monocrystalline silicon wafer cleaning agent and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| CN107858756A (en) * | 2017-12-02 | 2018-03-30 | 常州高特新材料有限公司 | A kind of monocrystalline silicon flocking additive and its application |
| CN115197791A (en) * | 2022-08-08 | 2022-10-18 | 苏州协鑫光伏科技有限公司 | Surfactant for pre-cleaning silicon wafer, and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101818103A (en) * | 2010-05-17 | 2010-09-01 | 江西瑞思博化工有限公司 | Washing agent for electronic materials |
| CN103484261A (en) * | 2012-06-13 | 2014-01-01 | 浙江瑞翌新材料科技有限公司 | Solar silicon wafer cleaning agent |
| CN103614252A (en) * | 2013-12-04 | 2014-03-05 | 宁波赛茵特科技服务有限公司 | Faint scent type car glass cleaning agent |
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2015
- 2015-10-19 CN CN201510677357.8A patent/CN105238574A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818103A (en) * | 2010-05-17 | 2010-09-01 | 江西瑞思博化工有限公司 | Washing agent for electronic materials |
| CN103484261A (en) * | 2012-06-13 | 2014-01-01 | 浙江瑞翌新材料科技有限公司 | Solar silicon wafer cleaning agent |
| CN103614252A (en) * | 2013-12-04 | 2014-03-05 | 宁波赛茵特科技服务有限公司 | Faint scent type car glass cleaning agent |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| CN107858756A (en) * | 2017-12-02 | 2018-03-30 | 常州高特新材料有限公司 | A kind of monocrystalline silicon flocking additive and its application |
| CN107858756B (en) * | 2017-12-02 | 2019-12-24 | 常州高特新材料股份有限公司 | Monocrystalline silicon texturing additive and application thereof |
| CN115197791A (en) * | 2022-08-08 | 2022-10-18 | 苏州协鑫光伏科技有限公司 | Surfactant for pre-cleaning silicon wafer, and preparation method and application thereof |
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Application publication date: 20160113 |