CN104028503B - The cleaning method of silicon material - Google Patents
The cleaning method of silicon material Download PDFInfo
- Publication number
- CN104028503B CN104028503B CN201410236921.8A CN201410236921A CN104028503B CN 104028503 B CN104028503 B CN 104028503B CN 201410236921 A CN201410236921 A CN 201410236921A CN 104028503 B CN104028503 B CN 104028503B
- Authority
- CN
- China
- Prior art keywords
- cleaning
- silicon material
- silicon
- giant
- washing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 38
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000003599 detergent Substances 0.000 claims abstract description 13
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003513 alkali Substances 0.000 claims abstract description 6
- 230000035939 shock Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 abstract description 17
- 238000005406 washing Methods 0.000 abstract description 15
- 239000002253 acid Substances 0.000 abstract description 6
- 238000003486 chemical etching Methods 0.000 abstract description 4
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/026—Cleaning by making use of hand-held spray guns; Fluid preparations therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses the cleaning method of a kind of silicon material, belong to technical field of solar batteries.It comprises the steps: that (1) adopts washing liquid that silicon material surface is carried out wiping；The weight of described washing liquid consists of: silicon slice detergent 25-35%, surplus are pure water；(2) giant rinses 3-8 minute；(3) ultrasonic cleaning；Cleaning temperature is 35-45 DEG C, and the time is 15-20 minute.The present invention adopts low alkali wash water wiping, giant to rinse, ultrasonic cleaning is cleaned to realize the comprehensive of silicon material, it is to avoid using the equipment that highly basic strong acid chemical etching process brings to endanger and environmental pollution, and method is simple, easily operates, cleaning performance is good.
Description
Technical field
The present invention relates to technical field of solar batteries.
Background technology
Monocrystalline silicon piece is a kind of basic material preparing solaode.The monocrystalline silicon piece of solar energy industry, generally adopts drawing to produce, the silicon single crystal rod prepared, and is then passed through blocking, edging, slice processing form.
For pulling monocrystal silicon rod, it is necessary to polysilicon raw materials (abbreviation silicon material) is carried out decontamination roguing and processes cleaning.Its cleaning quality is good and bad relevant to the quality of silicon single crystal rod, if residual impurity produces the appearance of the problems such as disconnected rib in crystal raw material when silicon single crystal rod too much can be caused to draw.Clean polycrystalline silicon material, be generally selected strong acid or highly basic as abluent to remove silicon material surface impurity.Although cleaning performance is relatively good; but equipment can be caused damage by strong acid and strong base, silicon chip surface is formed corrosion, clean qualification rate low; and the discharge of wastewater of highly basic strong acid chemical etching process causes very big burden to environment, does not meet the policy of environmental conservation and energy-saving and emission-reduction.
Summary of the invention
The present invention provides the cleaning method of a kind of silicon material, adopt low alkali wash water wiping, giant to rinse, ultrasonic cleaning is cleaned to realize the comprehensive of silicon material, avoid the equipment harm and the environmental pollution that use highly basic strong acid chemical etching process to bring, and method is simple, easily operation, cleaning performance is good.
The technical solution used in the present invention is:
The cleaning method of a kind of silicon material, comprises the steps:
(1) adopt washing liquid that silicon material surface is carried out wiping；The weight of described washing liquid consists of: silicon slice detergent 25-35%, surplus are pure water；
(2) giant rinses 3-8 minute；
(3) ultrasonic cleaning；Cleaning temperature is 35-45 DEG C, and the time is 15-20 minute.
Preferably, the pressure of giant is 8-12Kg.
Preferably, in step (3), ultrasonic cleaning adopts three cleaning type supersonic cleaning machines.
Preferably, three cleaning type supersonic cleaning machines are end shake, foreshock and after shock formula supersonic cleaning machine.
It is further preferred that the weight of washing liquid consists of: silicon slice detergent 30%, pure water 70%.
Further preferred, silicon slice detergent model is MT-480.
Silicon slice detergent is generally made up of alkali, chelate and surfactant etc., uses after being diluted by silicon chip cleaning liquid, and washing liquid belongs to low alkalinity, silicon chip surface will not be caused damage.Adopt washing liquid the method for silicon material surface wipes can be removed remained on surface such as cutting fluid in cutting process, silicon liquid etc., utilize giant to rinse the impurity of remained on surface, utilize ultrasonic cleaning to remove the impurity remained in silicon material gap.
Adopt and have the beneficial effects that produced by technique scheme:
The present invention adopts low alkali wash water wiping, giant to rinse, ultrasonic cleaning is cleaned to realize the comprehensive of silicon material, avoid the equipment harm and the environmental pollution that use highly basic strong acid chemical etching process to bring, and method is simple, easily operates, cleaning performance is good, cleans qualification rate more than 99%.
Detailed description of the invention
In following example, silicon slice detergent adopts the MT-480 silicon slice detergent that Dalian Sandaaoke Chemistry Co., Ltd. produces.
Embodiment 1
(1) adopt washing liquid that silicon material surface is carried out wiping；The weight of described washing liquid consists of: silicon slice detergent 25%, pure water 75%；
(2) giant rinses 3 minutes, and pressure is 12Kg；
(3) ultrasonic cleaning；Cleaning temperature is 45 DEG C, and the time is 15 minutes；Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Embodiment 2
(1) adopt washing liquid that silicon material surface is carried out wiping；The weight of described washing liquid consists of: silicon slice detergent 30%, pure water 70%；
(2) giant rinses 5 minutes, and pressure is 10Kg；
(3) ultrasonic cleaning；Cleaning temperature is 35 DEG C, and the time is 20 minutes；Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Embodiment 3
(1) adopt washing liquid that silicon material surface is carried out wiping；The weight of described washing liquid consists of: silicon slice detergent 35%, pure water 65%；
(2) giant rinses 8 minutes, and pressure is 8Kg；
(3) ultrasonic cleaning；Cleaning temperature is 40 DEG C, and the time is 18 minutes；Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Embodiment 4
(1) adopt washing liquid that silicon material surface is carried out wiping；The weight of described washing liquid consists of: silicon slice detergent 32%, pure water 68%；
(2) giant rinses 3 minutes, and pressure is 12Kg；
(3) ultrasonic cleaning；Cleaning temperature is 45 DEG C, and the time is 15 minutes；Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Claims (1)
1. the cleaning method of a silicon material, it is characterised in that comprise the steps:
(1) adopt low alkali wash water that silicon material surface is carried out wiping；The weight of described low alkali wash water consists of: silicon slice detergent 30%, pure water 70%；
(2) giant rinses 3-8 minute, and the pressure of giant is 8-12Kg；
(3) ultrasonic cleaning；Cleaning temperature is 35-45 DEG C, and the time is 15-20 minute；In described step (3), ultrasonic cleaning adopts three cleaning type supersonic cleaning machines, and three cleaning type supersonic cleaning machines are end shake, foreshock and after shock formula supersonic cleaning machine；
Described silicon slice detergent model is MT-480.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410236921.8A CN104028503B (en) | 2014-05-30 | 2014-05-30 | The cleaning method of silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410236921.8A CN104028503B (en) | 2014-05-30 | 2014-05-30 | The cleaning method of silicon material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104028503A CN104028503A (en) | 2014-09-10 |
| CN104028503B true CN104028503B (en) | 2016-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410236921.8A Expired - Fee Related CN104028503B (en) | 2014-05-30 | 2014-05-30 | The cleaning method of silicon material |
Country Status (1)
| Country | Link |
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| CN (1) | CN104028503B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106345739A (en) * | 2016-11-29 | 2017-01-25 | 晶科能源有限公司 | Method and device for cleaning silicon materials |
| CN106623218A (en) * | 2016-12-23 | 2017-05-10 | 江苏迩高新能源科技有限公司 | Alkaline type washing method for block-shaped silicon raw materials |
| CN108722982B (en) * | 2018-05-28 | 2020-09-22 | 邢台晶龙电子材料有限公司 | Treatment method of jaw plate of polycrystalline crusher |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6321759B1 (en) * | 1997-12-26 | 2001-11-27 | Canon Kabushiki Kaisha | Method for cleaning a substrate |
| CN101217102A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A method to remove surface contaminations on surfaces of semiconductor accessories |
| CN101652837A (en) * | 2007-03-30 | 2010-02-17 | 朗姆研究公司 | Methodology for cleaning of surface metal contamination from electrode assemblies |
| CN102513314A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Method for treating pollutant of workpiece provided with yttrium oxide coating layer |
| CN202343491U (en) * | 2011-11-29 | 2012-07-25 | 常州星海电子有限公司 | Paster pin flushing disc |
| CN103065994A (en) * | 2011-10-19 | 2013-04-24 | 中芯国际集成电路制造(上海)有限公司 | Device for cleaning silicon chip and method for cleaning silicon chip utilizing the same |
| CN103433233A (en) * | 2013-08-22 | 2013-12-11 | 英利集团有限公司 | Method for cleaning crystalline silicon corrosion sizing agents, crystalline silicon solar cell and method for manufacturing crystalline silicon solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH063831A (en) * | 1992-06-19 | 1994-01-14 | Canon Inc | Cleaning method for conductive base |
| CN102154711A (en) * | 2010-12-31 | 2011-08-17 | 百力达太阳能股份有限公司 | Monocrystal silicon cleaning liquid and precleaning process |
-
2014
- 2014-05-30 CN CN201410236921.8A patent/CN104028503B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6321759B1 (en) * | 1997-12-26 | 2001-11-27 | Canon Kabushiki Kaisha | Method for cleaning a substrate |
| CN101217102A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A method to remove surface contaminations on surfaces of semiconductor accessories |
| CN101652837A (en) * | 2007-03-30 | 2010-02-17 | 朗姆研究公司 | Methodology for cleaning of surface metal contamination from electrode assemblies |
| CN103065994A (en) * | 2011-10-19 | 2013-04-24 | 中芯国际集成电路制造(上海)有限公司 | Device for cleaning silicon chip and method for cleaning silicon chip utilizing the same |
| CN202343491U (en) * | 2011-11-29 | 2012-07-25 | 常州星海电子有限公司 | Paster pin flushing disc |
| CN102513314A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Method for treating pollutant of workpiece provided with yttrium oxide coating layer |
| CN103433233A (en) * | 2013-08-22 | 2013-12-11 | 英利集团有限公司 | Method for cleaning crystalline silicon corrosion sizing agents, crystalline silicon solar cell and method for manufacturing crystalline silicon solar cell |
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| Publication number | Publication date |
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| CN104028503A (en) | 2014-09-10 |
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Granted publication date: 20160629 |
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