CN104028503A - Cleaning method of silicon raw materials - Google Patents

Cleaning method of silicon raw materials Download PDF

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Publication number
CN104028503A
CN104028503A CN201410236921.8A CN201410236921A CN104028503A CN 104028503 A CN104028503 A CN 104028503A CN 201410236921 A CN201410236921 A CN 201410236921A CN 104028503 A CN104028503 A CN 104028503A
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CN
China
Prior art keywords
cleaning
silicon
cleaning method
silicon material
raw materials
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Application number
CN201410236921.8A
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Chinese (zh)
Other versions
CN104028503B (en
Inventor
刘彬国
席骁
何京辉
曹祥瑞
刘彬
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Xingtai Jinglong Electronic Material Co Ltd
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Xingtai Jinglong Electronic Material Co Ltd
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Priority to CN201410236921.8A priority Critical patent/CN104028503B/en
Publication of CN104028503A publication Critical patent/CN104028503A/en
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Publication of CN104028503B publication Critical patent/CN104028503B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/026—Cleaning by making use of hand-held spray guns; Fluid preparations therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a cleaning method of silicon raw materials, and belongs to the technical field of solar batteries. The cleaning method comprises the following steps that (1) the surface of the silicon raw materials is wiped through a cleansing solution, and the cleansing solution comprises, by weight, 25-35% of silicon slice detergents and the balance of pure water; (2) the silicon raw materials are flushed through a high-pressure water gun for 3-8 minutes; (3) ultrasound cleaning is carried out at the temperature of 35-45 DEG C and for 15-20 minutes. Complete cleaning of the silicon raw materials is achieved by means of wiping through the low-alkali cleansing solution, flushing through the high-pressure water gun and ultrasound cleaning, damage to equipment and environmental pollution caused by a strong-alkali strong-acid chemical corrosion process are avoided, and the cleaning method is simple, easy to operate and good in cleaning effect.

Description

The cleaning method of silicon material
Technical field
The present invention relates to technical field of solar batteries.
Background technology
Monocrystalline silicon piece is a kind of basic material of preparing solar cell.The monocrystalline silicon piece that solar energy industry is used, adopts drawing to produce conventionally, the silicon single crystal rod preparing, then through blocking, edging, slice processing form.
For pulling monocrystal silicon rod, need to carry out decontamination impurity elimination to polysilicon raw material (abbreviation silicon material) and process cleaning.Its cleaning quality is good and bad relevant to the quality of silicon single crystal rod, if the appearance that produces the problems such as disconnected rib when residual impurity too much can cause silicon single crystal rod to draw in crystal raw material.Clean polycrystalline silicon material, conventionally select strong acid or highly basic to remove silicon material surface impurity as cleaning agent.Although cleaning performance is relatively good; but strong acid and strong base can cause damage to equipment, silicon chip surface is formed to corrosion, cleaning qualification rate is low; and the discharge of wastewater of highly basic strong acid chemical etching technology causes very large burden to environment, does not meet the policy of environmental protection and energy-saving and emission-reduction.
Summary of the invention
The invention provides a kind of cleaning method of silicon material, adopt low alkali wash water wiping, giant flushing, ultrasonic cleaning to realize comprehensive cleaning of silicon material, avoid equipment harm and the environmental pollution of using highly basic strong acid chemical etching technology to bring, and method is simple, easy to operate, cleaning performance is good.
The technical solution used in the present invention is:
A cleaning method for silicon material, comprises the steps:
(1) adopt washing lotion to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 25-35%, surplus are pure water;
(2) giant rinses 3-8 minute;
(3) ultrasonic cleaning; Cleaning temperature is 35-45 ℃, and the time is 15-20 minute.
Preferably, the pressure of giant is 8-12Kg.
Preferably, in step (3), ultrasonic cleaning adopts three cleaning type supersonic cleaning machines.
Preferably, three cleaning type supersonic cleaning machines are end shake, foreshock and after shock formula supersonic cleaning machine.
Further preferred, the weight of washing lotion consists of: silicon slice detergent 30%, pure water 70%.
Further preferred, silicon slice detergent model is MT-480.
Silicon slice detergent is generally comprised of alkali, chelate and surfactant etc., will after silicon chip cleaning liquid dilution, use, and washing lotion belongs to low alkalinity, can not cause damage to silicon chip surface.Adopt washing lotion to the method for silicon material surface wiping can remove remained on surface as the cutting fluid in cutting process, silicon liquid etc., utilize the giant to rinse the impurity of remained on surface, utilize ultrasonic cleaning to remove and remain in the impurity in silicon material gap.
The beneficial effect that adopts technique scheme to produce is:
The present invention adopts low alkali wash water wiping, giant flushing, ultrasonic cleaning to realize comprehensive cleaning of silicon material, avoid equipment harm and the environmental pollution of using highly basic strong acid chemical etching technology to bring, and method is simple, easy to operate, cleaning performance is good, cleans qualification rate more than 99%.
The specific embodiment
In following examples, the MT-480 silicon slice detergent that silicon slice detergent adopts Dalian Sandaaoke Chemistry Co., Ltd. to produce.
Embodiment 1
(1) adopt washing lotion to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 25%, pure water 75%;
(2) giant rinses 3 minutes, and pressure is 12Kg;
(3) ultrasonic cleaning; Cleaning temperature is 45 ℃, and the time is 15 minutes; Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Embodiment 2
(1) adopt washing lotion to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 30%, pure water 70%;
(2) giant rinses 5 minutes, and pressure is 10Kg;
(3) ultrasonic cleaning; Cleaning temperature is 35 ℃, and the time is 20 minutes; Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Embodiment 3
(1) adopt washing lotion to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 35%, pure water 65%;
(2) giant rinses 8 minutes, and pressure is 8Kg;
(3) ultrasonic cleaning; Cleaning temperature is 40 ℃, and the time is 18 minutes; Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.
Embodiment 4
(1) adopt washing lotion to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 32%, pure water 68%;
(2) giant rinses 3 minutes, and pressure is 12Kg;
(3) ultrasonic cleaning; Cleaning temperature is 45 ℃, and the time is 15 minutes; Supersonic cleaning machine is end shake, foreshock and three supersonic cleaning machines of after shock formula.

Claims (6)

1. a cleaning method for silicon material, is characterized in that comprising the steps:
(1) adopt washing lotion to carry out wiping to silicon material surface; The weight of described washing lotion consists of: silicon slice detergent 25-35%, surplus are pure water;
(2) giant rinses 3-8 minute;
(3) ultrasonic cleaning; Cleaning temperature is 35-45 ℃, and the time is 15-20 minute.
2. the cleaning method of silicon material according to claim 1, the pressure that it is characterized in that described giant is 8-12Kg.
3. the cleaning method of silicon material according to claim 1, is characterized in that in described step (3), ultrasonic cleaning adopts three cleaning type supersonic cleaning machines.
4. the cleaning method of silicon material according to claim 3, is characterized in that three cleaning type supersonic cleaning machines are end shake, foreshock and after shock formula supersonic cleaning machine.
5. the cleaning method of silicon material according to claim 1, is characterized in that the weight of described washing lotion consists of: silicon slice detergent 30%, water 70%.
6. according to the cleaning method of the silicon material described in claim 1-5 any one, it is characterized in that described silicon slice detergent model is MT-480.
CN201410236921.8A 2014-05-30 2014-05-30 The cleaning method of silicon material Active CN104028503B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410236921.8A CN104028503B (en) 2014-05-30 2014-05-30 The cleaning method of silicon material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410236921.8A CN104028503B (en) 2014-05-30 2014-05-30 The cleaning method of silicon material

Publications (2)

Publication Number Publication Date
CN104028503A true CN104028503A (en) 2014-09-10
CN104028503B CN104028503B (en) 2016-06-29

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106345739A (en) * 2016-11-29 2017-01-25 晶科能源有限公司 Method and device for cleaning silicon materials
CN106623218A (en) * 2016-12-23 2017-05-10 江苏迩高新能源科技有限公司 Alkaline type washing method for block-shaped silicon raw materials
CN108722982A (en) * 2018-05-28 2018-11-02 邢台晶龙电子材料有限公司 A kind of processing method of polycrystalline crusher Jaw plate

Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH063831A (en) * 1992-06-19 1994-01-14 Canon Inc Cleaning method for conductive base
US6321759B1 (en) * 1997-12-26 2001-11-27 Canon Kabushiki Kaisha Method for cleaning a substrate
CN101217102A (en) * 2007-01-04 2008-07-09 北京北方微电子基地设备工艺研究中心有限责任公司 A method to remove surface contaminations on surfaces of semiconductor accessories
CN101652837A (en) * 2007-03-30 2010-02-17 朗姆研究公司 Methodology for cleaning of surface metal contamination from electrode assemblies
CN102154711A (en) * 2010-12-31 2011-08-17 百力达太阳能股份有限公司 Monocrystal silicon cleaning liquid and precleaning process
CN102513314A (en) * 2011-12-29 2012-06-27 中微半导体设备(上海)有限公司 Method for treating pollutant of workpiece provided with yttrium oxide coating layer
CN202343491U (en) * 2011-11-29 2012-07-25 常州星海电子有限公司 Paster pin flushing disc
CN103065994A (en) * 2011-10-19 2013-04-24 中芯国际集成电路制造(上海)有限公司 Device for cleaning silicon chip and method for cleaning silicon chip utilizing the same
CN103433233A (en) * 2013-08-22 2013-12-11 英利集团有限公司 Method for cleaning crystalline silicon corrosion sizing agents, crystalline silicon solar cell and method for manufacturing crystalline silicon solar cell

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063831A (en) * 1992-06-19 1994-01-14 Canon Inc Cleaning method for conductive base
US6321759B1 (en) * 1997-12-26 2001-11-27 Canon Kabushiki Kaisha Method for cleaning a substrate
CN101217102A (en) * 2007-01-04 2008-07-09 北京北方微电子基地设备工艺研究中心有限责任公司 A method to remove surface contaminations on surfaces of semiconductor accessories
CN101652837A (en) * 2007-03-30 2010-02-17 朗姆研究公司 Methodology for cleaning of surface metal contamination from electrode assemblies
CN102154711A (en) * 2010-12-31 2011-08-17 百力达太阳能股份有限公司 Monocrystal silicon cleaning liquid and precleaning process
CN103065994A (en) * 2011-10-19 2013-04-24 中芯国际集成电路制造(上海)有限公司 Device for cleaning silicon chip and method for cleaning silicon chip utilizing the same
CN202343491U (en) * 2011-11-29 2012-07-25 常州星海电子有限公司 Paster pin flushing disc
CN102513314A (en) * 2011-12-29 2012-06-27 中微半导体设备(上海)有限公司 Method for treating pollutant of workpiece provided with yttrium oxide coating layer
CN103433233A (en) * 2013-08-22 2013-12-11 英利集团有限公司 Method for cleaning crystalline silicon corrosion sizing agents, crystalline silicon solar cell and method for manufacturing crystalline silicon solar cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106345739A (en) * 2016-11-29 2017-01-25 晶科能源有限公司 Method and device for cleaning silicon materials
CN106623218A (en) * 2016-12-23 2017-05-10 江苏迩高新能源科技有限公司 Alkaline type washing method for block-shaped silicon raw materials
CN108722982A (en) * 2018-05-28 2018-11-02 邢台晶龙电子材料有限公司 A kind of processing method of polycrystalline crusher Jaw plate
CN108722982B (en) * 2018-05-28 2020-09-22 邢台晶龙电子材料有限公司 Treatment method of jaw plate of polycrystalline crusher

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