CN108597984A - A kind of cleaning method and its treatment process of monocrystalline silicon piece - Google Patents
A kind of cleaning method and its treatment process of monocrystalline silicon piece Download PDFInfo
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- CN108597984A CN108597984A CN201810329262.0A CN201810329262A CN108597984A CN 108597984 A CN108597984 A CN 108597984A CN 201810329262 A CN201810329262 A CN 201810329262A CN 108597984 A CN108597984 A CN 108597984A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0217—Use of a detergent in high pressure cleaners; arrangements for supplying the same
Abstract
The present invention relates to monocrystalline silicon piece technical fields, and disclose a kind of cleaning method of monocrystalline silicon piece, include the following steps：It takes APM solution 250g 300g to be added in the technology groove that volume is 150 180 liters, 140 150 liters of cleaning solution is added into technology groove, maintains the temperature between 45 55 degree, monocrystalline silicon piece is sprayed, then uses deionized water circulation flushing.The treatment process of the cleaning method of the monocrystalline silicon piece, the particle of monocrystalline silicon sheet surface can be removed by APM solution, partial organic substances and part metals, preliminary cleaning is effectively carried out to monocrystalline silicon piece, facilitate subsequent washing and cleaning operation, degumming and cleaning are carried out by using JG JT full-automatic silicon wafers degumming machines and supersonic wave cleaning machine, dirt can be effectively destroyed to adsorb with monocrystalline silicon sheet surface, effectively monocrystalline silicon piece is cleared up, it solves Conventional cleaning methods mostly only to clear up the particulate contamination on its table surface, not the problem of not ensuring that the cleaning of monocrystalline silicon sheet surface.
Description
Technical field
The present invention relates to monocrystalline silicon piece technical field, the cleaning method and its treatment process of specially a kind of monocrystalline silicon piece.
Background technology
Monocrystalline silicon piece is the monocrystal of silicon, is a kind of crystal with basic complete lattice structure, different directions tool
There is different property, be a kind of good semiconducting material, purity requirement is high, is used for producing the semiconductor devices and solar cell
Deng, be to be drawn in single crystal growing furnace with the polysilicon of high-purity, the elemental silicon of melting in solidification silicon atom with diamond crystalline substance
Lattice are arranged in many nucleus, if these nucleus grow up to the identical crystal grain of high preferred orientation, these crystal grain are parallel to be combined just
Crystallize into monocrystalline silicon, monocrystalline silicon has metalloid physical property, there is weaker electric conductivity, conductivity with the raising of temperature and
Increase, it is intrinsic semiconductor to have significant semiconduction, ultrapure monocrystalline silicon.
A kind of monocrystalline silicon piece prerinse liquid and its cleaning method for being 103087850 B of CN according to publication No., the prerinse
Method will not produce bubble print in silicon chip surface, and will not float basket, apparent boundary not will produce, due to reducing the dense of alkali
Degree, Reducing thickness also effectively reduce, and advantageously reduce the fragment rate of later process cell piece, but this method is only to monocrystalline silicon
Piece is pre-processed, and the cleaning of depth can not be carried out to monocrystalline silicon sheet surface, Conventional cleaning methods are mostly only to its table
The particulate contamination on surface is cleared up, and does not ensure that the cleaning of monocrystalline silicon sheet surface, it is proposed that a kind of monocrystalline silicon piece it is clear
Washing method and its treatment process solve the above problems.
Invention content
(1) the technical issues of solving
In view of the deficiencies of the prior art, the present invention provides a kind of monocrystalline silicon piece prerinse liquid and its cleaning method, have
The advantages that effectively being cleared up monocrystalline silicon sheet surface solves Conventional cleaning methods mostly only to the particle on its table surface
Shape impurity is cleared up, the problem of not ensuring that the cleaning of monocrystalline silicon sheet surface.
(2) technical solution
To realize that the above-mentioned purpose effectively cleared up monocrystalline silicon sheet surface, the present invention provide the following technical solutions：
A kind of cleaning method of monocrystalline silicon piece, includes the following steps：
1) prerinse：It is in the technology groove that 150-180 rises, into technology groove to take APM solution 250g-300g to be added to volume
The cleaning solution that 140-150 rises is added, maintains the temperature between 45-55 degree, monocrystalline silicon piece is sprayed, then uses deionization
Water circulation flushing；
2) degumming：Using JG-JT full-automatic silicon wafer degumming machines, wherein spray pressure 0.015-0.017 megapascal, lactic acid uses
90 knife of service life, partition board place spacing 50-80mm；
3) ultrasonic cleaning：Using supersonic wave cleaning machine, cleaning agent 90-100 liters, cleaning is added in supersonic frequency 40KHZ
Bath temperature degree is between 40-55 degree, scavenging period 4-6 minutes；
4) organic solvent cleans：It is put into inside rinse bath using acetone soln, cleans 10 minutes, then use deionized water
Circulation flushing；
5) SPM is cleaned：It using SPM cleaning solution 120-130 liters, maintains the temperature between 550-600 degree, cleans ten minutes,
Then deionized water circulation flushing is used；
6) HPM is cleaned：Using HPM cleaning solution 120-130 liters, 570 degree or so are maintained the temperature at, cleans ten minutes, then
Using deionized water circulation flushing；
7) it dries：Drying can be used or drying is dried.
Preferably, the APM solution is also referred to as SCL, and cleaning solution is by NH4OH, H2O2 and H2O according to 15：15：70 ratio is mixed
It closes.
Preferably, the spray time before the monocrystalline silicon piece degumming was at 30 minutes or more.
Preferably, the cleaning agent replacement cycle is cleaning 7500-8500 pieces.
Preferably, the SPM cleaning solutions by H2SO4, H2O2 and H2O according to 20:5:75 ratio mixes.
Preferably, the HPM cleaning solutions by HCL, H2O2 and H2O according to 10:10:80 ratio mixes.
Another technical problem to be solved by the present invention is that a kind for the treatment of process of the cleaning method of monocrystalline silicon piece is provided, including
Following steps：
1) pre-treatment is carried out to monocrystalline silicon piece, APM solution is added and is cleaned, maintains the temperature between 45-55 degree, to list
Crystal silicon chip is sprayed, and spray time removed the particulate contamination on its surface at 30 minutes or more, then uses deionized water
Circulation flushing is carried out, the monocrystalline silicon piece after cleaning is collected, it is spare；
2) it takes and gives over to spare monocrystalline silicon piece in step 1), monocrystalline silicon piece is carried out using JG-JT full-automatic silicon wafer degumming machines
The monocrystalline silicon piece after the completion of degumming is collected in the degumming on surface, launches in band supersonic wave cleaning machine, cleaning agent is added, keep cleaning
Machine internal temperature cleans 4-6 minutes between 40-55 degree, collects the monocrystalline silicon piece after cleaning, spare；
3) it takes and gives over to spare monocrystalline silicon piece in step 2), be placed into rinse bath, acetone soln is launched into rinse bath,
Then deionized water circulation flushing is used in cleaning ten minutes, collect the monocrystalline silicon piece after cleaning, spare；
4) take and give over to spare monocrystalline silicon piece in step 3), launch SPM cleaning solutions, keep the temperature at 550-600 degree it
Between, it cleans ten minutes, then uses deionized water circulation flushing, collect the monocrystalline silicon piece after cleaning, launch HPM cleaning solutions, protect
Temperature is held at 570 degree or so, cleans ten minutes, then uses deionized water circulation flushing, collects the monocrystalline silicon piece after cleaning, it is standby
With；
5) it takes and gives over to spare monocrystalline silicon piece in step 4), be dried, thus obtained more pure using drying or drying
Net monocrystalline silicon piece.
(3) advantageous effect
Compared with prior art, the present invention provides a kind of cleaning method of monocrystalline silicon piece and its treatment process, have with
Lower advantageous effect：
1, the cleaning method and its treatment process of the monocrystalline silicon piece, the grain of monocrystalline silicon sheet surface can be removed by APM solution
Son, partial organic substances and part metals, effectively carry out monocrystalline silicon piece preliminary cleaning, facilitate subsequent washing and cleaning operation,
Degumming and cleaning are carried out by using JG-JT full-automatic silicon wafers degumming machine and supersonic wave cleaning machine, can effectively be destroyed
Dirt and monocrystalline silicon sheet surface adsorb, and cause the fatigue rupture of crud layer and are refuted from can be detached from monocrystalline silicon piece, gas
The surface of solids is cleaned in the vibration of type bubble, can further be removed the spot of monocrystalline silicon sheet surface, be made monocrystalline silicon piece
Cleaning effect it is more preferable, the use for the person of being convenient to use.
2, the cleaning method and its treatment process of the monocrystalline silicon piece carries out monocrystalline silicon piece by using acetone soln clear
It washes, can effectively remove the organic pollution of monocrystalline silicon sheet surface, it, can be by monocrystalline silicon sheet surface then by SPM cleaning solutions
Metal oxidation after be dissolved in cleaning solution, and can oxidation operation generate CO2 and H2O, can effectively remove silicon chip surface
Weight organic contaminations and part metals can remove the natural oxide film of monocrystalline silicon sheet surface then by HPM cleaning solutions, adhere to
Metal on natural oxide film will be dissolved in cleaning solution, while DHF inhibits the formation of oxidation film, therefore can hold very much
It changes places and removes the Al, Fe, Zn of silicon chip surface, the metals such as Ni, DHF can also remove the metal hydrogen-oxygen being attached on natural oxide film
Compound, when being cleaned with DHF, when natural oxide film is corroded, the silicon of silicon chip surface is hardly corroded, effectively to monocrystalline
Silicon chip is cleared up, and is solved Conventional cleaning methods and is only cleared up mostly the particulate contamination on its table surface, can not
The problem of ensureing the cleaning of monocrystalline silicon sheet surface.
Specific implementation mode
Below in conjunction with the embodiment of the present invention, technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Embodiment one：
A kind of cleaning method of monocrystalline silicon piece, includes the following steps：
1) prerinse：It takes APM solution 255g to be added in the technology groove that volume is 155 liters, 140 liters is added into technology groove
Cleaning solution, maintain the temperature at 45 degree, monocrystalline silicon piece sprayed, the spray time before monocrystalline silicon piece degumming was at 30 minutes
More than, then use deionized water circulation flushing, APM solution to be also referred to as SCL, cleaning solution is by NH4OH, H2O2 and H2O according to 15：
15：70 ratio mixes；
2) degumming：Using JG-JT full-automatic silicon wafer degumming machines, wherein 0.015 megapascal of spray pressure, lactic acid service life 90
Knife, partition board place spacing 50mm；
3) ultrasonic cleaning：Using supersonic wave cleaning machine, 90 liters of cleaning agent is added in supersonic frequency 40KHZ, and cleaning agent is more
It is cleaning 7500 to change the period, and rinse bath temperature is at 45 degree, scavenging period 4 minutes；
4) organic solvent cleans：It is put into inside rinse bath using acetone soln, cleans 10 minutes, then use deionized water
Circulation flushing；
5) SPM is cleaned：Using 120 liters of SPM cleaning solutions, maintain the temperature at 550 degree, clean ten minutes, then using go from
Sub- water circulation flushing, SPM cleaning solutions are by H2SO4, H2O2 and H2O according to 20:5:75 ratio mixes；
6) HPM is cleaned：Using 120 liters of HPM cleaning solutions, 570 degree or so are maintained the temperature at, cleans ten minutes, then uses
Deionized water circulation flushing, HPM cleaning solutions are by HCL, H2O2 and H2O according to 10:10:80 ratio mixes；
7) it dries：Drying can be used or drying is dried.
A kind for the treatment of process of monocrystalline silicon piece, includes the following steps：
1) pre-treatment is carried out to monocrystalline silicon piece, APM solution is added and is cleaned, 45 degree are maintained the temperature at, to monocrystalline silicon piece
It is sprayed, spray time removed the particulate contamination on its surface at 30 minutes or more, was then followed using deionized water
Ring rinses, and collects the monocrystalline silicon piece after cleaning, spare；
2) it takes and gives over to spare monocrystalline silicon piece in step 1), monocrystalline silicon piece is carried out using JG-JT full-automatic silicon wafer degumming machines
The monocrystalline silicon piece after the completion of degumming is collected in the degumming on surface, launches in band supersonic wave cleaning machine, cleaning agent is added, keep cleaning
Machine internal temperature cleans 4 minutes at 45 degree, collects the monocrystalline silicon piece after cleaning, spare；
3) it takes and gives over to spare monocrystalline silicon piece in step 2), be placed into rinse bath, acetone soln is launched into rinse bath,
Then deionized water circulation flushing is used in cleaning ten minutes, collect the monocrystalline silicon piece after cleaning, spare；
4) it takes and gives over to spare monocrystalline silicon piece in step 3), launch SPM cleaning solutions, keep the temperature at 550 degree, cleaning ten
Minute, deionized water circulation flushing is then used, the monocrystalline silicon piece after cleaning is collected, HPM cleaning solutions is launched, maintains the temperature at
It 570 degree or so, cleans ten minutes, then uses deionized water circulation flushing, collect the monocrystalline silicon piece after cleaning, it is spare；
5) it takes and gives over to spare monocrystalline silicon piece in step 4), be dried, thus obtained more pure using drying or drying
Net monocrystalline silicon piece；
It is handled according to above method, can effectively remove particle, metal, organic matter and the nature of monocrystalline silicon sheet surface
Oxide causes product unqualified because impurity is contained on surface when avoiding monocrystalline silicon piece subsequent applications, and the person's of being convenient to use makes
With.
Embodiment two：
A kind of cleaning method of monocrystalline silicon piece, includes the following steps：
1) prerinse：It takes APM solution 280g to be added in the technology groove that volume is 170 liters, 150 liters is added into technology groove
Cleaning solution, maintain the temperature at 55 degree, monocrystalline silicon piece sprayed, the spray time before monocrystalline silicon piece degumming was at 30 minutes
More than, then use deionized water circulation flushing, APM solution to be also referred to as SCL, cleaning solution is by NH4OH, H2O2 and H2O according to 15：
15：70 ratio mixes.
2) degumming：Using JG-JT full-automatic silicon wafer degumming machines, wherein 0.017 megapascal of spray pressure, lactic acid service life 90
Knife, partition board place spacing 80mm；
3) ultrasonic cleaning：Using supersonic wave cleaning machine, 100 liters of cleaning agent, cleaning agent is added in supersonic frequency 40KHZ
Replacement cycle is cleaning 8500, and rinse bath temperature is at 55 degree, scavenging period 6 minutes；
4) organic solvent cleans：It is put into inside rinse bath using acetone soln, cleans 10 minutes, then use deionized water
Circulation flushing；
5) SPM is cleaned：Using 130 liters of SPM cleaning solutions, maintain the temperature at 570 degree, clean ten minutes, then using go from
Sub- water circulation flushing, SPM cleaning solutions are by H2SO4, H2O2 and H2O according to 20:5:75 ratio mixes；
6) HPM is cleaned：Using 130 liters of HPM cleaning solutions, 570 degree or so are maintained the temperature at, cleans ten minutes, then uses
Deionized water circulation flushing, HPM cleaning solutions are by HCL, H2O2 and H2O according to 10:10:80 ratio mixes；
7) it dries：Drying can be used or drying is dried.
A kind for the treatment of process of monocrystalline silicon piece, includes the following steps：
1) pre-treatment is carried out to monocrystalline silicon piece, APM solution is added and is cleaned, 55 degree are maintained the temperature at, to monocrystalline silicon piece
It is sprayed, spray time removed the particulate contamination on its surface at 30 minutes or more, was then followed using deionized water
Ring rinses, and collects the monocrystalline silicon piece after cleaning, spare；
2) it takes and gives over to spare monocrystalline silicon piece in step 1), monocrystalline silicon piece is carried out using JG-JT full-automatic silicon wafer degumming machines
The monocrystalline silicon piece after the completion of degumming is collected in the degumming on surface, launches in band supersonic wave cleaning machine, cleaning agent is added, keep cleaning
Machine internal temperature cleans 6 minutes at 55 degree, collects the monocrystalline silicon piece after cleaning, spare；
3) it takes and gives over to spare monocrystalline silicon piece in step 2), be placed into rinse bath, acetone soln is launched into rinse bath,
Then deionized water circulation flushing is used in cleaning ten minutes, collect the monocrystalline silicon piece after cleaning, spare；
4) it takes and gives over to spare monocrystalline silicon piece in step 3), launch SPM cleaning solutions, keep the temperature at 570 degree, cleaning ten
Minute, deionized water circulation flushing is then used, the monocrystalline silicon piece after cleaning is collected, HPM cleaning solutions is launched, maintains the temperature at
It 570 degree or so, cleans ten minutes, then uses deionized water circulation flushing, collect the monocrystalline silicon piece after cleaning, it is spare；
5) it takes and gives over to spare monocrystalline silicon piece in step 4), be dried, thus obtained more pure using drying or drying
Net monocrystalline silicon piece；
The monocrystalline silicon piece handled according to above method can prevent silicon chip surface in scouring processes from will not too dry, and prevent
Mortar does the cleaning that silicon chip surface is influenced on surface, and has ensured that degumming temperature will not be excessively high, prevents silicon chip surface from aoxidizing, side
Monocrystalline silicon piece cleaning, keep the cleaning performance of monocrystalline silicon piece more preferable, the use for the person of being convenient to use.
The beneficial effects of the invention are as follows：The cleaning method and its treatment process of the monocrystalline silicon piece, can be removed by APM solution
Particle, partial organic substances and the part metals of monocrystalline silicon sheet surface, effectively carry out monocrystalline silicon piece preliminary cleaning, facilitate
Subsequent washing and cleaning operation carries out degumming and cleaning by using JG-JT full-automatic silicon wafers degumming machine and supersonic wave cleaning machine,
Dirt and monocrystalline silicon sheet surface can effectively be destroyed to adsorb, cause the fatigue rupture of crud layer and refuted from can take off
From monocrystalline silicon piece, the surface of solids is cleaned in the vibration of gas type bubbles, can further remove monocrystalline silicon sheet surface
Spot keeps the cleaning effect of monocrystalline silicon piece more preferable, the use for the person of being convenient to use.
The cleaning method and its treatment process of the monocrystalline silicon piece clean monocrystalline silicon piece by using acetone soln,
The organic pollution of monocrystalline silicon sheet surface can be effectively removed, it, can be by the gold of monocrystalline silicon sheet surface then by SPM cleaning solutions
It is dissolved in cleaning solution after belonging to oxidation, and oxidation operation can be generated CO2 and H2O, can effectively remove having again for silicon chip surface
Machine stains and part metals can remove the natural oxide film of monocrystalline silicon sheet surface then by HPM cleaning solutions, is attached to certainly
Metal on right oxidation film will be dissolved in cleaning solution, while DHF inhibits the formation of oxidation film, therefore can be easily
The Al, Fe, Zn of silicon chip surface, the metals such as Ni are removed, DHF can also remove the metal hydroxide being attached on natural oxide film
Object, when being cleaned with DHF, when natural oxide film is corroded, the silicon of silicon chip surface is hardly corroded, effectively to monocrystalline silicon
Piece is cleared up, and is solved Conventional cleaning methods and is only cleared up mostly the particulate contamination on its table surface, can not protect
The problem of demonstrate,proving the cleaning of monocrystalline silicon sheet surface.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a kind of cleaning method of monocrystalline silicon piece, which is characterized in that include the following steps：
1) prerinse：It is to be added into technology groove in the technology groove that 150-180 rises to take APM solution 250g-300g to be added to volume
The cleaning solution that 140-150 rises, is maintained the temperature between 45-55 degree, is sprayed to monocrystalline silicon piece, then followed using deionized water
Ring rinses；
2) degumming：Using JG-JT full-automatic silicon wafer degumming machines, wherein spray pressure 0.015-0.017 megapascal, lactic acid service life
90 knives, partition board place spacing 50-80mm；
3) ultrasonic cleaning：Using supersonic wave cleaning machine, cleaning agent 90-100 liters are added in supersonic frequency 40KHZ, clean bath temperature
Degree is between 40-55 degree, scavenging period 4-6 minutes；
4) organic solvent cleans：It is put into inside rinse bath using acetone soln, cleans 10 minutes, then recycled with deionized water
It rinses；
5) SPM is cleaned：It using SPM cleaning solution 120-130 liters, maintains the temperature between 550-600 degree, cleaning ten minutes, then
Using deionized water circulation flushing；
6) HPM is cleaned：Using HPM cleaning solution 120-130 liters, 570 degree or so are maintained the temperature at, cleans ten minutes, then uses
Deionized water circulation flushing；
7) it dries：Drying can be used or drying is dried.
2. a kind of cleaning method of monocrystalline silicon piece according to claim 1, which is characterized in that the APM solution is also referred to as
SCL, cleaning solution is by NH4OH, H2O2 and H2O according to 15：15：70 ratio mixes.
3. a kind of cleaning method of monocrystalline silicon piece according to claim 1, which is characterized in that before the monocrystalline silicon piece degumming
Spray time at 30 minutes or more.
4. a kind of cleaning method of monocrystalline silicon piece according to claim 1, which is characterized in that the cleaning agent replacement cycle
To clean 7500-8500 pieces.
5. a kind of cleaning method of monocrystalline silicon piece according to claim 1, which is characterized in that the SPM cleaning solutions by
H2SO4, H2O2 and H2O are according to 20:5:75 ratio mixes.
6. a kind of cleaning method of monocrystalline silicon piece according to claim 1, which is characterized in that the HPM cleaning solutions by
HCL, H2O2 and H2O are according to 10:10:80 ratio mixes.
7. a kind for the treatment of process of monocrystalline silicon piece, which is characterized in that include the following steps：
1) pre-treatment is carried out to monocrystalline silicon piece, APM solution is added and is cleaned, maintains the temperature between 45-55 degree, to monocrystalline silicon
Piece is sprayed, and spray time removed the particulate contamination on its surface at 30 minutes or more, then deionized water is used to carry out
Circulation flushing collects the monocrystalline silicon piece after cleaning, spare；
2) it takes and gives over to spare monocrystalline silicon piece in step 1), monocrystalline silicon sheet surface is carried out using JG-JT full-automatic silicon wafer degumming machines
Degumming, collect degumming after the completion of monocrystalline silicon piece, launch band supersonic wave cleaning machine in, be added cleaning agent, keep cleaning machine in
Portion's temperature is cleaned 4-6 minutes between 40-55 degree, collects the monocrystalline silicon piece after cleaning, spare；
3) it takes and gives over to spare monocrystalline silicon piece in step 2), be placed into rinse bath, acetone soln is launched into rinse bath, clean
Ten minutes, deionized water circulation flushing is then used, collects the monocrystalline silicon piece after cleaning, it is spare；
4) it takes and gives over to spare monocrystalline silicon piece in step 3), launch SPM cleaning solutions, keep the temperature between 550-600 degree, clearly
It washes ten minutes, then uses deionized water circulation flushing, collect the monocrystalline silicon piece after cleaning, launch HPM cleaning solutions, keep temperature
It at 570 degree or so, cleans ten minutes, then uses deionized water circulation flushing, collect the monocrystalline silicon piece after cleaning, it is spare；
5) it takes and gives over to spare monocrystalline silicon piece in step 4), be dried, thus obtained more pure using drying or drying
Monocrystalline silicon piece.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110491807A (en) * | 2019-08-13 | 2019-11-22 | 安徽晶天新能源科技有限责任公司 | A kind of silicon wafer production automation silicon wafer stripping machine |
| CN111921945A (en) * | 2020-07-14 | 2020-11-13 | 海盐得胜化工设备有限公司 | Cleaning process for polycrystalline silicon structured packing |
| CN112871811A (en) * | 2019-11-29 | 2021-06-01 | 长鑫存储技术有限公司 | Single wafer cleaning system and method |
| CN114078692A (en) * | 2022-01-07 | 2022-02-22 | 浙江大学杭州国际科创中心 | Wafer cleaning method and wafer cleaning equipment |
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2018
- 2018-04-13 CN CN201810329262.0A patent/CN108597984A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110491807A (en) * | 2019-08-13 | 2019-11-22 | 安徽晶天新能源科技有限责任公司 | A kind of silicon wafer production automation silicon wafer stripping machine |
| CN110491807B (en) * | 2019-08-13 | 2022-04-08 | 安徽晶天新能源科技有限责任公司 | Automatic silicon wafer degumming machine for silicon wafer production |
| CN112871811A (en) * | 2019-11-29 | 2021-06-01 | 长鑫存储技术有限公司 | Single wafer cleaning system and method |
| CN112871811B (en) * | 2019-11-29 | 2023-03-14 | 长鑫存储技术有限公司 | Single wafer cleaning system and method |
| CN111921945A (en) * | 2020-07-14 | 2020-11-13 | 海盐得胜化工设备有限公司 | Cleaning process for polycrystalline silicon structured packing |
| CN114078692A (en) * | 2022-01-07 | 2022-02-22 | 浙江大学杭州国际科创中心 | Wafer cleaning method and wafer cleaning equipment |
| CN114078692B (en) * | 2022-01-07 | 2024-02-20 | 浙江大学杭州国际科创中心 | Wafer cleaning method and wafer cleaning equipment |
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