CN108300583A - Silicon slice detergent and silicon wafer cleaning method - Google Patents
Silicon slice detergent and silicon wafer cleaning method Download PDFInfo
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- CN108300583A CN108300583A CN201810151790.1A CN201810151790A CN108300583A CN 108300583 A CN108300583 A CN 108300583A CN 201810151790 A CN201810151790 A CN 201810151790A CN 108300583 A CN108300583 A CN 108300583A
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- Prior art keywords
- silicon
- cleaning
- agent
- slice detergent
- wafer cleaning
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 239000003599 detergent Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000003814 drug Substances 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 238000002604 ultrasonography Methods 0.000 claims abstract description 9
- 150000001298 alcohols Chemical class 0.000 claims abstract description 8
- 239000002585 base Substances 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 230000003213 activating effect Effects 0.000 claims abstract description 7
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 7
- 239000002738 chelating agent Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000000080 wetting agent Substances 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims abstract description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 40
- 239000012459 cleaning agent Substances 0.000 claims description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 22
- -1 polyoxypropylene ethylene oxide Polymers 0.000 claims description 13
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 10
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 7
- HSRJKNPTNIJEKV-UHFFFAOYSA-N Guaifenesin Chemical compound COC1=CC=CC=C1OCC(O)CO HSRJKNPTNIJEKV-UHFFFAOYSA-N 0.000 claims description 7
- 229960001484 edetic acid Drugs 0.000 claims description 7
- BGNXCDMCOKJUMV-UHFFFAOYSA-N Tert-Butylhydroquinone Chemical compound CC(C)(C)C1=CC(O)=CC=C1O BGNXCDMCOKJUMV-UHFFFAOYSA-N 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 150000002191 fatty alcohols Chemical class 0.000 claims description 6
- 235000011187 glycerol Nutrition 0.000 claims description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 6
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 6
- 239000004250 tert-Butylhydroquinone Substances 0.000 claims description 6
- 235000019281 tert-butylhydroquinone Nutrition 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims description 4
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 claims description 3
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 3
- 239000000194 fatty acid Substances 0.000 claims description 3
- 229930195729 fatty acid Natural products 0.000 claims description 3
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 3
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229960003330 pentetic acid Drugs 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical group C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000003963 antioxidant agent Substances 0.000 abstract description 3
- 230000003078 antioxidant effect Effects 0.000 abstract description 3
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/008—Polymeric surface-active agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/146—Sulfuric acid esters
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2041—Dihydric alcohols
- C11D3/2044—Dihydric alcohols linear
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2065—Polyhydric alcohols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3788—Graft polymers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/44—Multi-step processes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
Abstract
The present invention relates to a kind of silicon slice detergent and silicon wafer cleaning methods.The silicon slice detergent contains chelating agent, activating agent, water soluble alkali, alcohols additive, antifoaming agent, base material wetting agent, antioxidant and deionized water.The silicon wafer cleaning method is to dry silicon chip to be cleaned through pure water rinsing, medicament cleaning, pure water rinsing, ultrasound rinsing, lifting successively, obtains the silicon chip of clean surface.Above-mentioned silicon slice detergent and silicon wafer cleaning method, can reduce silicon chip chipping, it is hidden split, dirty ratio, do not occur black surround after cleaning, silicon chip is not easy to be aoxidized in cleaning process.Meanwhile above-mentioned silicon slice detergent and silicon wafer cleaning method can also reduce the usage amount of ten thousand chip detergents, improve the operating environment of degumming cleaning employee, improve Wafer Cleaning speed.
Description
Technical field
The present invention relates to photovoltaic products processing technique fields, more particularly to a kind of silicon slice detergent and Wafer Cleaning side
Method.
Background technology
With the development of solar energy rapidly and efficiently, the ever-larger diameters of silicon chip, ultrathin and modular construction it is highly integrated, it is right
Wafer Cleaning requires higher and higher.In cleaning process, once there is spot, chipping, hidden split entire silicon chip and will scrap.Mesh
Before, the cleaning for silicon chip, used cleaning solution is usually the alkaline solution being configured to by potassium hydroxide and water.But
The cleaning ability of potassium hydroxide solution is limited, and a large amount of foams are easy tod produce in cleaning process, and floatation of foam is in cleaning solution
Silicon powder is attached to silicon wafer top edge by surface can form the black print of at least wide 1-2mm, it is difficult to rinse.It is directed in industry at present
Such issues that, generally use two methods：One is the lye dosages that is multiplied；One is increase ultrasound in ultrasonic rinse cycle
The amplitude of wave.Both methods be the disadvantage is that, increase the dosage of lye, cost can be increased, and it is possible to cause silicon chip
Secondary pollution；Enhance the amplitude of ultrasonic wave, then can generate damage to silicon chip, the hidden of silicon chip is made to split and collapse the rising of adactylism number.Therefore,
There is an urgent need to develop a kind of novel silicon slice detergents and silicon wafer cleaning method.
Invention content
Based on this, it is necessary to for the undesirable problem of Wafer Cleaning effect, provide a kind of silicon slice detergent and silicon chip is clear
Washing method.
A kind of silicon slice detergent, the component containing following mass percent：
Chelating agent 5%-8%
Activating agent 0.5%-1%
Water soluble alkali 20%-25%
Alcohols additive 1%-2%
Antifoaming agent 0%-2%
Base material wetting agent 0.5%-1%
Antioxidant 1%-2%,
Deionized water 59.4%-72%.
Above-mentioned silicon slice detergent, can reduce silicon chip chipping, it is hidden split, dirty ratio, do not occur black surround, silicon chip after cleaning
It is not easy to be aoxidized in cleaning process.
The chelating agent is selected from ethylenediamine tetra-acetic acid, nitrilotriacetic acid, diethylentriamine five in one of the embodiments,
One or more of acetic acid, N- ethoxy ethamine triacetic acids.
The activating agent is in fatty alcohol polyoxyethylene ether, lauryl sodium sulfate in one of the embodiments,
It is one or more of.
The one kind or several of the water soluble alkali in sodium hydroxide, potassium hydroxide, ammonium hydroxide in one of the embodiments,
Kind.
The alcohols additive is in glycerine, triethylene-glycol, diacetone alcohol in one of the embodiments,
It is one or more of.
The antifoaming agent is selected from polyoxypropylene ethylene oxide glycerin ether, high-carbon polyol fatty acid in one of the embodiments,
One or more of ester complexes, polypropylene glycol, dimethyl silicone polymer.
The base material wetting agent is selected from Siloxane-Oxyalkylene Copolymers, polyether-modified dimethyl in one of the embodiments,
One or more of siloxanes, propylene glycol.
The antioxidant is in tert-butylhydroquinone, di-tert-butyl p-cresol in one of the embodiments,
It is one or more of.
The silicon slice detergent contains the component of following mass percent in one of the embodiments,：
Ethylenediamine tetra-acetic acid 8%
Fatty alcohol polyoxyethylene ether 0.95%
Sodium hydroxide 24.5%
Glycerine 2%
Polyoxypropylene ethylene oxide glycerin ether 2%
Siloxane-Oxyalkylene Copolymers 1%
Tert-butylhydroquinone 2%,
Deionized water 59.55%.
A kind of silicon wafer cleaning method, by silicon chip to be cleaned successively through first rinsing, medicament cleaning, secondary rinsing, ultrasound
Rinsing, lifting drying, obtain the silicon chip of clean surface, and the cleaning agent used in the medicament cleaning is selected from foregoing cleaning
Agent.
Above-mentioned silicon wafer cleaning method can also reduce the usage amount of ten thousand chip detergents, improve the operation ring of degumming cleaning employee
Wafer Cleaning speed is improved in border.
The medicament cleaning first uses the mixed liquor of cleaning agent and water to clean 1 time in one of the embodiments, then uses
The mixed liquor of cleaning agent, potassium hydroxide and water cleans 2 times, and the water temperature of medicament cleaning is 60 ± 5 DEG C.
The ratio both in the mixed liquor of the cleaning agent and water is 1 in one of the embodiments,:33, the cleaning
The ratio of three is 1 in the mixed liquor of agent, potassium hydroxide and water:0.08:33.
The number of the ultrasound rinsing is 1-3 times in one of the embodiments,.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with specific implementation mode,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are only used to explain this hair
It is bright, it is not intended to limit the present invention.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more
Any and all combinations of relevant Listed Items.
Embodiment
The present invention provides a kind of silicon slice detergents, include the component of following mass percent：
Chelating agent 5%-8%
Activating agent 0.5%-1%
Water soluble alkali 20%-25%
Alcohols additive 1%-2%
Antifoaming agent 0%-2%
Base material wetting agent 0.5%-1%
Antioxidant 1%-2%,
Deionized water 59.4%-72%.
In addition to the above components, other components can also be added, can be realized i.e. as long as changing the minimum function and effect of cleaning agent
It can.
Preferably, the chelating agent is selected from ethylenediamine tetra-acetic acid, nitrilotriacetic acid, diethylene-triamine pentaacetic acid, N- hydroxyl second
One or more of base ethamine triacetic acid.
Preferably, the activating agent is selected from one or more of fatty alcohol polyoxyethylene ether, lauryl sodium sulfate.
Preferably, the water soluble alkali is selected from one or more of sodium hydroxide, potassium hydroxide, ammonium hydroxide.
Preferably, the alcohols additive is selected from one or more of glycerine, triethylene-glycol, diacetone alcohol.
Preferably, the antifoaming agent is selected from polyoxypropylene ethylene oxide glycerin ether, the fatty acid ester compounded object of higher alcohols, poly- third
One or more of glycol, dimethyl silicone polymer.
Preferably, the base material wetting agent is selected from Siloxane-Oxyalkylene Copolymers, polyether-modified dimethyl siloxane, propylene glycol
In it is arbitrary or several.
Preferably, the antioxidant is selected from one or more of tert-butylhydroquinone, di-tert-butyl p-cresol.
It is further preferred that the silicon slice detergent contains the component of following mass percent：
Ethylenediamine tetra-acetic acid 8%
Fatty alcohol polyoxyethylene ether 0.95%
Sodium hydroxide 24.5%
Glycerine 2%
Polyoxypropylene ethylene oxide glycerin ether 2%
Siloxane-Oxyalkylene Copolymers 1%
Tert-butylhydroquinone 2%,
Deionized water 59.55%.
A kind of silicon wafer cleaning method, by silicon chip to be cleaned successively through first rinsing, medicament cleaning, secondary rinsing, ultrasound
Rinsing, lifting drying, obtain the silicon chip of clean surface, and the cleaning agent used in the medicament cleaning is selected from foregoing cleaning
Agent.
Preferably, the medicament cleaning first uses the mixed liquor of cleaning agent and water to clean 1 time, then using cleaning agent, hydrogen-oxygen
The mixed liquor for changing potassium and water cleans 2 times, and the water temperature of medicament cleaning is 60 ± 5 DEG C.
Preferably, the ratio both in the mixed liquor of the cleaning agent and water is 1:33, the cleaning agent, potassium hydroxide with
The ratio of three is 1 in the mixed liquor of water:0.08:33.
Preferably, the number of the ultrasound rinsing is 1-3 times.
The present inventor has found by practice, by using above-mentioned silicon slice detergent and cleaning method, can reduce
Silicon chip chipping, it is hidden split, dirty ratio, do not occur black surround after cleaning, silicon chip is not easy to be aoxidized in cleaning process.Meanwhile
The usage amount of ten thousand chip detergents can also be reduced, the operating environment of degumming cleaning employee is improved, improves Wafer Cleaning speed.
Below in conjunction with specific embodiment, the present invention is further elaborated.
According to the weight percent of table 1, by ethylenediamine tetra-acetic acid, fatty alcohol polyoxyethylene ether, sodium hydroxide, glycerine,
Polyoxypropylene ethylene oxide glycerin ether, Siloxane-Oxyalkylene Copolymers, tert-butylhydroquinone and deionized water are abundant at normal temperatures
Stirring is to get silicon slice detergent 1-5.
Table 1
According to the weight percent of table 2, by nitrilotriacetic acid, lauryl sodium sulfate, ammonium hydroxide, diacetone alcohol, poly- the third two
Alcohol, propylene glycol, di-tert-butyl p-cresol and deionized water are sufficiently stirred at normal temperatures to get silicon slice detergent 6-10.
Table 2
11 groups of cleaning machines are set, and every group of cleaning machine requires correspondingly have drift according to the silicon wafer cleaning process of the cleaning present invention
Washing trough 1, pharmacy slot 2-4, potcher 5, ultrasonic rinse tank 6-8, lifting drying tank 9.It is first clear by every group before carrying out Wafer Cleaning
The pure water of equivalent is added in the pharmacy slot 2-4 of washing machine, water temperature is 60 ± 5 DEG C.Then in the pharmacy slot 2 of 1-10 group cleaning machines
According to water:Cleaning agent is 3:1 ratio is separately added into cleaning agent 1-10, according to cleaning agent in pharmacy slot 3-4:Potassium hydroxide:
Water is 1:0.08:33 ratio is separately added into cleaning agent 1-10 and potassium hydroxide；In addition, in the pharmacy slot 2- of the 11st group of cleaning machine
According to water in 4:Potassium hydroxide is 29:Potassium hydroxide is added in 1 ratio, as a comparison case.
Silicon chip is carried out according to the process sequence of first rinsing, medicament cleaning, secondary rinsing, ultrasound rinsing, lifting drying
It cleans, black surround rate, oxygenation efficiency, the dirty rate of sorting measurement silicon chip after 1h, ten thousand chip detergent dosages, test result is measured after 12h
It is shown in Table 3.
Table 3
Silicon slice detergent and silicon wafer cleaning method using the present invention are can be seen that by the data of table 3, compared to simple
For the cleaning performance of potassium hydroxide, silicon chip black surround rate, oxygenation efficiency, dirty rate have significant decline, part cleaning agent
It can reach and prevent silicon chip black surround, oxidation, dirty advantageous effect.Also, the dosage of ten thousand chip detergents also has a degree of
It reduces, cleaning takes less, improves cleaning efficiency.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of silicon slice detergent, which is characterized in that include the component of following mass percent：
Chelating agent 5%-8%
Activating agent 0.5%-1%
Water soluble alkali 20%-25%
Alcohols additive 1%-2%
Antifoaming agent 0%-2%
Base material wetting agent 0.5%-1%
Antioxidant 1%-2%,
Deionized water 59.4%-72%.
2. silicon slice detergent according to claim 1, which is characterized in that the chelating agent is selected from ethylenediamine tetra-acetic acid, nitrogen
One or more of river triacetic acid, diethylene-triamine pentaacetic acid, N- ethoxy ethamine triacetic acids.
3. silicon slice detergent according to claim 1, which is characterized in that the activating agent is selected from aliphatic alcohol polyethenoxy
One or more of ether, lauryl sodium sulfate.
4. silicon slice detergent according to claim 1, which is characterized in that the antifoaming agent is selected from polyoxypropylene ethylene oxide
One or more of the fatty acid ester compounded object of glycerin ether, higher alcohols, polypropylene glycol, dimethyl silicone polymer.
5. silicon slice detergent according to claim 1, which is characterized in that the base material wetting agent is selected from polyether-modified poly- silicon
One or more of oxygen alkane, polyether-modified dimethyl siloxane, propylene glycol.
6. silicon slice detergent according to claim 1, which is characterized in that the silicon slice detergent contains following quality percentage
The component of ratio：
Ethylenediamine tetra-acetic acid 8%
Fatty alcohol polyoxyethylene ether 0.95%
Sodium hydroxide 24.5%
Glycerine 2%
Polyoxypropylene ethylene oxide glycerin ether 2%
Siloxane-Oxyalkylene Copolymers 1%
Tert-butylhydroquinone 2%,
Deionized water 59.55%.
7. a kind of silicon wafer cleaning method, which is characterized in that clean silicon chip to be cleaned through first rinsing, medicament successively, is secondary
Rinsing, ultrasound rinsing, lifting drying, obtain the silicon chip of clean surface, and the cleaning agent used in the medicament cleaning is selected from right
It is required that 1-6 any one of them cleaning agents.
8. silicon wafer cleaning method according to claim 7, which is characterized in that medicament cleaning first uses cleaning agent and water
Mixed liquor cleans 1 time, then is cleaned 2 times using the mixed liquor of cleaning agent, potassium hydroxide and water, and the water temperature of medicament cleaning is 60 ± 5
℃。
9. silicon wafer cleaning method according to claim 8, which is characterized in that both in the mixed liquor of the cleaning agent and water
Ratio is 1:33, the ratio of three is 1 in the mixed liquor of the cleaning agent, potassium hydroxide and water:0.08:33.
10. according to any one of the claim 7-9 silicon wafer cleaning methods, which is characterized in that it is described ultrasound rinsing number be
1-3 times.
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| CN109022176A (en) * | 2018-09-19 | 2018-12-18 | 广德通灵电子有限公司 | A kind of circuit board cleaning agent and preparation method thereof |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN110591832A (en) * | 2019-09-26 | 2019-12-20 | 嘉兴瑞智光能科技有限公司 | Efficient environment-friendly pollution-free silicon wafer cleaning agent and preparation method thereof |
| CN112126534A (en) * | 2020-09-01 | 2020-12-25 | 武汉宜田科技发展有限公司 | Neutral degumming agent for diamond wire cutting single/polycrystalline silicon rod |
| CN112795438A (en) * | 2020-12-31 | 2021-05-14 | 句容协鑫光伏科技有限公司 | Battery piece cleaning agent and cleaning method thereof |
| CN113046191A (en) * | 2021-03-26 | 2021-06-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning agent, preparation method and silicon wafer cleaning process |
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| CN109022176A (en) * | 2018-09-19 | 2018-12-18 | 广德通灵电子有限公司 | A kind of circuit board cleaning agent and preparation method thereof |
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| CN112795438A (en) * | 2020-12-31 | 2021-05-14 | 句容协鑫光伏科技有限公司 | Battery piece cleaning agent and cleaning method thereof |
| CN113046191A (en) * | 2021-03-26 | 2021-06-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning agent, preparation method and silicon wafer cleaning process |
| CN114292708A (en) * | 2021-11-30 | 2022-04-08 | 嘉兴市小辰光伏科技有限公司 | Silicon wafer cleaning agent for cleaning solar cell before texturing and use method |
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Effective date of registration: 20181030 Address after: 225000 Jinshan Road, eight Li Town, Yangzhou, Jiangsu 129 Applicant after: YANGZHOU XIEXIN PHOTOVOLTAIC SCIENCE & TECHNOLOGY CO., LTD. Address before: 213022 1 New Fourth Road, Xinbei District, Changzhou, Jiangsu Applicant before: Changzhou Xiexin PV Technology Co.,Ltd. |
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Application publication date: 20180720 |