CN108655101A - A kind of cleaning method of feux rouges GaAs chips - Google Patents
A kind of cleaning method of feux rouges GaAs chips Download PDFInfo
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- CN108655101A CN108655101A CN201710198753.1A CN201710198753A CN108655101A CN 108655101 A CN108655101 A CN 108655101A CN 201710198753 A CN201710198753 A CN 201710198753A CN 108655101 A CN108655101 A CN 108655101A
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- gaas
- feux rouges
- cleaning method
- gaas chips
- hydrogen peroxide
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004140 cleaning Methods 0.000 title claims abstract description 55
- 239000011259 mixed solution Substances 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 230000007017 scission Effects 0.000 claims abstract description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 35
- 239000000243 solution Substances 0.000 claims description 32
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 15
- 238000007790 scraping Methods 0.000 claims description 12
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 10
- 235000009161 Espostoa lanata Nutrition 0.000 claims description 9
- 240000001624 Espostoa lanata Species 0.000 claims description 9
- MKTJTLRLXTUJCM-UHFFFAOYSA-N azanium;hydrogen peroxide;hydroxide Chemical compound [NH4+].[OH-].OO MKTJTLRLXTUJCM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 8
- 239000000908 ammonium hydroxide Substances 0.000 claims description 8
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 8
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 159000000011 group IA salts Chemical class 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000012266 salt solution Substances 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000000527 sonication Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 235000019593 adhesiveness Nutrition 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000005416 organic matter Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 71
- 239000000463 material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 235000021050 feed intake Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
- B08B1/165—Scrapers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a kind of cleaning methods of feux rouges GaAs chips, belong to semiconductor processing technology field, including following basic step (1) at the uniform velocity scrapes wafer surface with blade along cleavage side vertical direction；(2) pad is handled；(3) it is cleaned by ultrasonic；(4) it is rinsed using deionized water；(5) it is cleaned with dioxysulfate water mixed solution；(6) it is rinsed using deionized water；(7) dryer drying or hot nitrogen drying machine drying are used；The bump defects of the GaP of GaAs wafer epitaxial layer surfaces can be effectively removed using the method and utensil of the present invention, keep surfacing smooth, it effectively reduces in follow-up photoetching work step because of the high situation of sliver rate caused by contact exposure, while can also effectively remove the extremely strong organic matter of some adhesivenesses of surface and dirty.
Description
Technical field
The present invention relates to a kind of cleaning methods of feux rouges GaAs chips, belong to semiconductor processing technology field.
Background technology
GaAs is to be widely used a kind of general important semi-conducting material at this stage, belongs to III-V compounds of group and partly leads
Body belongs to lattice of zinc blende type structure, and fusing point is 1237 DEG C, and 1.4 electron volts of energy gap, lattice constant is 5.65 × 10-10m,
It is a kind of electronic information function material haveing excellent performance, based on above reason, the application of GaAs is extremely extensive.For example, with
The high frequency made based on GaAs materials, high speed, radiation protection high-temperature device, be usually applied to laser, wireless communication, optical fiber
The fields such as communication, mobile communication, GPS worldwide navigations.GaAs material can also by be added other elements change band gaps and
It generates photovoltaic reaction, and photoelectric cell is fabricated to this.GaAs is as photoelectric cell in application, being typically used in household electric
Device, industrial instrument, large screen display, business automation equipment, traffic administration etc..In addition, the also extensive use of GaAs materials
In weaponry field, such as electronic warfare system, Satellite Communication System, command, control, communication and intelligence system, satellite navigation system, phased-array radar, essence
Often using GaAs devices during true guidance, electronic countermeasure, ultrahigh speed be military or the Military Electronics field such as field mainframe computer
And integrated circuit.
Currently, red-light LED generally uses substrates of the GaAs grown epitaxial layer, using GaAs the lining of red-light LED
Compared with traditional silicon materials, its electron mobility is about 5.7 times of silicon materials at bottom, it has very high electron transfer
Rate, broad stopband, direct band gap, the low characteristic of consumption power.Requirement with semi-conductor market to the output yield of chip is more next
It is higher, so just thering is the cleaning quality of the gallium arsenide substrate of epitaxial layer to have higher requirement growth, because of wafer surface
Flatness directly influence after processing technology and chip sliver rate, the organic substance residues on surface are very easy to direct
Influence the photoelectric parameter and appearance of chip.It is predominantly served as a contrast in GaAs using MOCVD using GaAs the epitaxial growth of substrate
Grow N-type limiting layer, Quantum Well, p-type limiting layer etc. on bottom, outermost surfaces GaP, by the speed of growth, life in growth course
The influence of long temperature fluctuation etc. is easy to generate protrusion on surface after generating outermost GaP, since GaAs wafer thicknesses are very thin,
During subsequent touch exposes, exposure apparatus is pressed on chip, is easy sliver phenomenon occur because of surface irregularity.And show
Generally the mixed solution of dioxysulfate water is being used to be cleaned, it is clear that some also takes the mixed solution of ammonium hydroxide hydrogen peroxide to carry out
It washes, if Chinese patent document (application number 201010513860.7) discloses the cleaning method of compound semiconductor wafer, especially
It is with the cleaning method for the Group III-V compound semiconductor chip that GaAs (GaAs) is representative, including with weak ammonia, peroxide
Change hydrogen and aqueous systems handle chip, deionized water handles chip etc. with a kind of diluted acid or dilute alkaline soln again after rinsing.But it is such
Cleaning method can not clear up wafer surface because of GaP protrusions caused by epitaxial growth is uneven.
Invention content
For the prior art, using being cleaned existing for organic solvent Ultrasonic Heating cleaning method, incomplete, sliver rate is high lacks
It falls into, the present invention provides a kind of feux rouges GaAs cleanings cleaned completely and can effectively reduce sliver rate.
Term is explained
Cleavage side：The straight line of epi-layer surface, the pingbian vertical with epitaxial wafer crystal orientation adjust insert orientation with this.
Room temperature：Room temperature of the present invention is 18~26 DEG C.
GaAs chips：GaAs chips of the present invention are the routinely crystalline substance after technique grown epitaxial layer on gaas substrates
Piece.
Technical scheme is as follows：
A kind of cleaning method of feux rouges GaAs chips, the feux rouges GaAs chips include the extension on GaAs substrates and substrate
The top of layer, the epitaxial layer is GaP layers, including step：
(1) scraping blade：The wafer surface, blade and the crystalline substance are at the uniform velocity scraped with blade along GaAs chip cleavage side vertical direction
The angle on piece surface is 30 ° -60 °, wipes the GaP layer surface protrusion particles of the chip off；
(2) pad is handled：Step is wiped with the cotton balls for being soaked with organic solution (1) treated GaAs wafer surfaces 1-3 times,
It is every all over using new cotton balls instead；
(3) ultrasonic：The GaAs chips that step (2) processing is completed are placed in ammonium hydroxide hydrogen peroxide mixed solution, ultrasound is carried out
Processing 1.5-10 minutes, ultrasonic frequency 10-50KHz, 50-90 DEG C of Ultrasonic Heating temperature；
(4) it washes：The GaAs chips deionized water that step (3) processing is completed is rinsed 3-5 minutes；
(5) solution cleans：The GaAs chips that step (4) processing is completed are placed in sulfuric acid-hydrogen peroxide mixed solution and are rinsed
25-60 seconds；
(6) it washes：The GaAs chips deionized water that step (5) processing is completed is rinsed 3-5 minutes；
(7) dry：The GaAs chips that step (6) processing is completed are dried in dryer or are dried using hot nitrogen dryer
It is dry.
According to currently preferred, the speed of the movement of blade described in step (1) is 0.8-1.2cm/s.Further preferably
1cm/s。
According to currently preferred, in step (1), described blade one end is connected with fixed link, and fixed link passes through connecting rod
It is connected with movable stand with cylinder, movable stand is connected by roller screw with mounting.Blade is small, is extended through fixed link solid
It is fixed, so that movable stand is moved horizontally on mounting using roller screw, to drive blade movement to carry out by connecting rod and cylinder
Scraping blade, connecting rod is hinged with fixed link, and cylinder can pass through telescopic adjustment blade angle.
According to currently preferred, when the processing of step (2) pad, first GaAs wafer-levels put neatly, use glass
Stick fixes chip cleavage side.
According to currently preferred, the organic solution described in step (2) is one in inorganic alkali solution, alkaline salt solution
Kind or a variety of mixing；Inorganic alkali solution is NaOH or Ca (OH)2, wherein NaOH or Ca (OH)2Mass percentage concentration be 10%~
60%；Alkaline salt solution is Na2CO3Or NaHCO3, wherein Na2CO3Or NaHCO3Mass percentage concentration be 10%~60%.
According to currently preferred, ionized water is washed after pad in step (2).The residual organic matter of wafer surface is rushed
Wash clean.
According to currently preferred, the ultrasonic frequency of the supersound process described in step (3) is 20-30KHz.
According to currently preferred, ammonium hydroxide in the mixed solution of ammonium hydroxide hydrogen peroxide described in step (3)：The volume of hydrogen peroxide
Than being 1:(0.2~1), mixed solution temperature are room temperature.
According to currently preferred, the ammonia concn described in step (3) is 25%~28% mass fraction, and hydrogen peroxide is dense
Degree is 30% mass fraction.
According to currently preferred, sulfuric acid in the mixed solution of dioxysulfate water described in step (5)：The volume of hydrogen peroxide
Than being 1:(0.2~1), mixed solution temperature are 50~70 DEG C.
According to currently preferred, in step (7), when using hot nitrogen drying machine drying, nitrogen gas purity >=99.999%；Nitrogen
Atmospheric pressure is 0.1-0.3MPa.
The technique of GaAs Growns epitaxial layer of the present invention is different from remaining such as grown on sapphire epitaxial layer
Technique, the technique of GaAs growing epitaxial layers is sometimes because surface has that GaP is raised the reason of growth technique, and conventional cleaning is often
Only focus on washing the pollution of the organic matter and inorganic matter of surface adhesion, and the GaP protrusions of epi-layer surface cannot be got rid of, and
GaP protrusions can excessively increase subsequent work step the risk of sliver, remove GaP protrusions using step of the present invention, help reduction and split
Piece rate.
The present invention has the beneficial effect that：
1, the bump defects of the GaP of GaAs wafer epitaxial layer surfaces can be effectively removed using the method and utensil of the present invention,
Keep surfacing smooth, effectively reduces because of the situation that sliver rate caused by contact exposure is high in follow-up photoetching work step, together
When can get rid of the extremely strong organic matter of some adhesivenesses of surface and dirty.
2, be moistened with alkaline solution cotton balls pad method can effectively remove scraping blade scrape the wafer surface adhesiveness do not fallen compared with
Residue after strong greasy dirt and dirty and scraping blade；Ammonium hydroxide hydrogen peroxide mixed solution is used to coordinate ultrasound further clear later
It washes, it is dirty can more preferably to wash remained on surface.
3, carrying out further cleaning using dioxysulfate water mixed solution can ensure that surface thoroughly washes having for surface
Machine object and remaining dirty.
4, the measure of present invention reduction sliver rate is easy to operate, device is efficiently convenient, cost is very low, and controllability is strong.
Description of the drawings
Fig. 1 is the cleaning step flow chart of the present invention；
Fig. 2 is the blade structure schematic diagram of the present invention；
Wherein：1, blade, 2, fixed link, 3, connecting rod, 4, cylinder, 5, movable stand, 6, mounting, 7, ball-screw.
Specific implementation mode
Below in conjunction with specific embodiment and Figure of description, the present invention will be further described, but not limited to this.
Embodiment 1：
A kind of cleaning method of feux rouges GaAs chips grows extension in the present embodiment with conventional method on gaas substrates
Layer, epitaxial layer outmost surface material are GaP, and cleaning method includes being lacked using the GaP protrusions of scraping blade removal GaAs surface epitaxial layers
It falls into, physics pad coordinates the step removal wafer surface adhesiveness of ammonium hydroxide hydrogen peroxide solution ultrasound stronger dirty and greasy dirt, so
The dirty and greasy dirt of dioxysulfate aqueous solution removal remained on surface is used afterwards.
Include the following steps：
(1) scraping blade：Chip is put on super-clean bench, pads upper non-dust cloth below, it is even along cleavage side vertical direction with blade
Speed scrapes wafer surface, and control blade movement speed is 1cm/s, and the angle of blade and wafer surface is maintained at 45 °, and blade encounters
Scraping blade dynamics need to be increased when GaP protrusion particles ensures that wafer surface particle is all scraped, after scraping attention checked whether with halogen lamp
There is scuffing, blade exchange need to be carried out as blade face is jagged；
(2) pad：GaAs wafer-levels after the completion of step (1) processing are put neatly, crystalline substance is fixed using glass bar
Piece cleavage side, the cotton balls edge that organic solution is moistened with tweezers gripping uniformly wipe wafer surface with cleavage side vertical direction, each
Chip is wiped three times with cotton balls, every all over using still not used new cotton balls, organic solution Na instead2CO3Solution, Na2CO3Solution
Allocation ratio is 200g Na2CO3：300ml water；The chip that pad terminates is put into gaily decorated basket deionized water to rinse 5 minutes；
(3) ultrasonic：The GaAs chips that step (2) processing is completed are put into ammonium hydroxide hydrogen peroxide mixed solution and are ultrasonically treated
90s, and teetertotter per the 30s gaily decorated basket, wherein ammonium hydroxide：The volume ratio of hydrogen peroxide is 1:0.6, a concentration of 25% mass point of ammonium hydroxide
Number, hydrogen peroxide concentration are 30% mass fraction, supersonic frequency 30KHz, Ultrasonic Heating temperature 50 C；
(4) it washes：The GaAs chips that step (3) processing is completed are cleaned into chip 5 minutes using deionized water；
(5) solution cleans：The GaAs chips that step (4) processing is completed are put into the mixed solution of dioxysulfate water clearly
It washes, to carry the gaily decorated basket up and down in the solution, 60s, wherein sulfuric acid are cleaned in mixed solution：The volume ratio of hydrogen peroxide is 1:0.4,
Hydrogen peroxide concentration is 30% mass fraction, and a concentration of 98% mass fraction of sulfuric acid, mixed solution temperature is 50 DEG C；
(6) it washes：The GaAs chips that step (5) processing is completed are cleaned into chip 5 minutes using deionized water；
(7) dry, the GaAs chips that step (6) processing is completed are dried in dryer.
Embodiment 2：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that knife in step (1)
The angle of piece and wafer surface is 30 °.
Embodiment 3：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that knife in step (1)
The angle of piece and wafer surface is 60 °.
Embodiment 4：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (1),
Blade one end is connected with fixed link, as shown in Fig. 2, fixed link is connected with movable stand by connecting rod and cylinder, movable stand passes through
Roller screw is connected with mounting.Blade is small, is extended through fixed link and is fixed, makes movable stand on mounting using roller screw
It moves horizontally, to drive blade movement to carry out scraping blade by connecting rod and cylinder, connecting rod is hinged with fixed link, and cylinder can lead to
Telescopic adjustment blade angle is crossed, speed, dynamics be not during carrying out step (1), when Mechanical Moving can avoid artificial mobile
Just the shortcomings that grasping.
Embodiment 5：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that having in step (2)
Machine solution is NaOH solution, and wherein the mass percentage concentration of NaOH is 10%.
Embodiment 6：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that having in step (2)
Machine solution is NaOH solution, and wherein the mass percentage concentration of NaOH is 60%.
Embodiment 7：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that having in step (2)
Machine solution is Ca (OH)2Solution, wherein Ca (OH)2Mass percentage concentration be 10%.
Embodiment 8：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that having in step (2)
Machine solution is Ca (OH)2Solution, wherein Ca (OH)2Mass percentage concentration be 60%.
Embodiment 9：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that having in step (2)
Machine solution is NaHCO3Solution, wherein NaHCO3Mass percentage concentration be 10%.
Embodiment 10：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that having in step (2)
Machine solution is NaHCO3Solution, wherein NaHCO3Mass percentage concentration be 60%.
Embodiment 11：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that surpassing in step (3)
Acoustic frequency is 20KHz.
Embodiment 12：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that surpassing in step (3)
Acoustic frequency is 10KHz, 90 DEG C of Ultrasonic Heating temperature.
Embodiment 13：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that surpassing in step (3)
Acoustic frequency is 50KHz, is ultrasonically treated 10 minutes.
Embodiment 14：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that step in step (3)
Suddenly ammonium hydroxide in the mixed solution of ammonium hydroxide hydrogen peroxide described in (3)：The volume ratio of hydrogen peroxide is 1:0.2, mixed solution temperature is normal
26 DEG C of temperature.
Embodiment 15：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that step in step (3)
Suddenly ammonium hydroxide in the mixed solution of ammonium hydroxide hydrogen peroxide described in (3)：The volume ratio of hydrogen peroxide is 1:1, ammonia concn is 28% mass
Score, hydrogen peroxide concentration are 30% mass fraction, and mixed solution temperature is 18 DEG C of room temperature.
Embodiment 16：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (4),
The GaAs chips that step (3) processing is completed are cleaned into chip 3 minutes using deionized water.
Embodiment 17：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (5),
The GaAs chips that step (4) processing is completed are placed in dioxysulfate water mixed solution and are rinsed 25 seconds.
Embodiment 18：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (5),
Sulfuric acid in the mixed solution of the dioxysulfate water：The volume ratio of hydrogen peroxide is 1:0.2.
Embodiment 19：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (5),
Sulfuric acid in the mixed solution of the dioxysulfate water：The volume ratio of hydrogen peroxide is 1:1, mixed solution temperature is 70 DEG C.
Embodiment 20：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (6),
The GaAs chips that step (5) processing is completed are cleaned into chip 3 minutes using deionized water.
Embodiment 21：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that in step (7),
The GaAs chips that step (6) processing is completed are used into hot nitrogen drying machine drying, nitrogen gas purity >=99.999%；Nitrogen pressure is
0.3MPa。
Embodiment 22：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that being wiped in step (2)
It is wiped one time with cotton balls when piece processing.
Embodiment 23：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that knife in step (1)
Piece movement speed is 0.8cm/s.
Embodiment 24：
A kind of cleaning method of feux rouges GaAs chips, step is as described in Example 1, the difference is that knife in step (1)
Piece movement speed is 1.2cm/s.
Comparative example 1：
Wafer cleaning is carried out using existing cleaning method, step is：
(1) mixed solution cleans：Using the cleaning gaily decorated basket, the mixing that the GaAs chips after washing are put into ammonium hydroxide hydrogen peroxide is molten
It is cleaned in liquid 2 minutes, to carry the gaily decorated basket up and down in the solution until cleaning terminates；
(2) it washes：Chip is cleaned using deionized water 5 minutes.
(3) chip after washing is put into concentrated sulfuric acid hydrogen peroxide in solution and is cleaned 1 minute, carry flower up and down in the solution
Basket is until cleaning terminates；
(4) dry, the GaAs chips that processing is completed are dried in dryer.
Experimental example
There to be the chip of epitaxial wafer using the cleaning growth of the method for embodiment 1 and comparative example 1, counts splitting in subsequent technique
Piece rate, as shown in table 1, table 2, from above comparison it can be found that method sliver rate using the present invention has apparent drop
It is low.
Table 1 is to take the sliver rate of scraping blade step to count in embodiment 1：
| Technique | Epitaxial wafer |
| Feed intake number | 3500 |
| Sliver number | 82 |
| Sliver rate | 2.34% |
Table 2 is not take the sliver rate of scraping blade step to count in comparative example：
| Technique | Epitaxial wafer |
| Feed intake number | 6100 |
| Sliver number | 562 |
| Sliver rate | 9.21% |
Claims (10)
1. a kind of cleaning method of feux rouges GaAs chips, the feux rouges GaAs chips include the extension on GaAs substrates and substrate
The top of layer, the epitaxial layer is GaP layers, including step：
(1) scraping blade：The wafer surface, blade and the chip table are at the uniform velocity scraped with blade along GaAs chip cleavage side vertical direction
The angle in face is 30 ° -60 °, wipes the GaP layer surface protrusion particles of the chip off；
(2) pad is handled：Step is wiped with the cotton balls for being soaked with organic solution (1) treated GaAs wafer surfaces 1-3 times, every time
Use new cotton balls instead；
(3) ultrasonic：The GaAs chips that step (2) processing is completed are placed in ammonium hydroxide hydrogen peroxide mixed solution, are ultrasonically treated
1.5-10 minutes, ultrasonic frequency 10-50KHz, 50-90 DEG C of Ultrasonic Heating temperature；
(4) it washes：The GaAs chips deionized water that step (3) processing is completed is rinsed 3-5 minutes；
(5) solution cleans：The GaAs chips that step (4) processing is completed are placed in sulfuric acid-hydrogen peroxide mixed solution and rinse 25-60
Second；
(6) it washes：The GaAs chips deionized water that step (5) processing is completed is rinsed 3-5 minutes；
(7) dry：The GaAs chips that step (6) processing is completed are dried in dryer or are used hot nitrogen drying machine drying.
2. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that blade described in step (1)
Mobile speed is 0.8-1.2cm/s；Further preferred 1cm/s.
3. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that in step (1), the blade
One end is connected with fixed link, and fixed link is connected with movable stand by connecting rod and cylinder, and movable stand passes through roller screw and mounting
It is connected.
4. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that when the processing of step (2) pad,
First GaAs wafer-levels are put neatly, chip cleavage side is fixed using glass bar.
5. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that having described in step (2)
Machine solution is one or more mixing in inorganic alkali solution, alkaline salt solution；Inorganic alkali solution is NaOH or Ca (OH)2,
Middle NaOH or Ca (OH)2Mass percentage concentration be 10%~60%；Alkaline salt solution is Na2CO3Or NaHCO3, wherein Na2CO3
Or NaHCO3Mass percentage concentration be 10%~60%.
6. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that pad backlash in step (2)
Wash away ionized water.
7. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that super described in step (3)
The ultrasonic frequency of sonication is 20-30KHz.
8. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that ammonium hydroxide described in step (3)
Ammonium hydroxide in the mixed solution of hydrogen peroxide：The volume ratio of hydrogen peroxide is 1:(0.2~1), mixed solution temperature are room temperature；Preferably,
Ammonia concn described in step (3) is 25%~28% mass fraction, and hydrogen peroxide concentration is 30% mass fraction.
9. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that sulfuric acid described in step (5)
Sulfuric acid in the mixed solution of hydrogen peroxide：The volume ratio of hydrogen peroxide is 1:(0.2~1), mixed solution temperature are 50~70 DEG C.
10. the cleaning method of feux rouges GaAs chips according to claim 1, which is characterized in that in step (7), use heat
When nitrogen drying machine drying, nitrogen gas purity >=99.999%；Nitrogen pressure is 0.1-0.3MPa.
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| CN111092011A (en) * | 2018-10-23 | 2020-05-01 | 山东浪潮华光光电子股份有限公司 | Treatment method for improving surface pollution of LED chip |
| CN114871186A (en) * | 2022-01-19 | 2022-08-09 | 上海晶盟硅材料有限公司 | Pretreatment method for epitaxial wafer resistance measurement |
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| CN109719081B (en) * | 2018-12-29 | 2021-07-06 | 华中光电技术研究所（中国船舶重工集团有限公司第七一七研究所） | Method for cleaning microcrystalline glass |
| CN114871186A (en) * | 2022-01-19 | 2022-08-09 | 上海晶盟硅材料有限公司 | Pretreatment method for epitaxial wafer resistance measurement |
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